CN103022093A - 一种绝缘体上纳米级硅锗材料及其制备方法 - Google Patents
一种绝缘体上纳米级硅锗材料及其制备方法 Download PDFInfo
- Publication number
- CN103022093A CN103022093A CN2011102806678A CN201110280667A CN103022093A CN 103022093 A CN103022093 A CN 103022093A CN 2011102806678 A CN2011102806678 A CN 2011102806678A CN 201110280667 A CN201110280667 A CN 201110280667A CN 103022093 A CN103022093 A CN 103022093A
- Authority
- CN
- China
- Prior art keywords
- insulator
- germanium material
- preparation
- nanoscale
- nano silicone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
清洗步骤 | 化学溶剂 | 溶剂配比 | 清洗温度 | 时间 | 目的 |
1 | NH4OH∶H2O2∶H2O | 1∶1∶5 | 70~80℃ | 5min | 去除表面微粒 |
2 | 超高纯去离子水 | 室温 | 清洗 | ||
3 | HCL∶H2O2∶H2O | 1∶1∶8 | 70~80℃ | 5min | 去除金属沾污 |
4 | 超高纯去离子水 | 室温 | 清洗 | ||
5 | H2SO4∶H2O2∶H2O | 4∶1∶100 | 室温 | 5min | 去除有机沾污 |
6 | 超高纯去离子水 | 室温 | 清洗 | ||
7 | HF∶H2O | 1∶7 | 室温 | 10s | 去除氧化层 |
8 | 超高纯去离子水 | 室温 | 清洗 |
元素种类 | 质量百分比(Wt%) | 摩尔百分比(At%) |
O(氧) | 13.64 | 19.50 |
Si(硅) | 58.48 | 47.65 |
Ge(锗) | 12.75 | 4.02 |
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110280667.8A CN103022093B (zh) | 2011-09-21 | 2011-09-21 | 一种绝缘体上纳米级硅锗材料及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110280667.8A CN103022093B (zh) | 2011-09-21 | 2011-09-21 | 一种绝缘体上纳米级硅锗材料及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103022093A true CN103022093A (zh) | 2013-04-03 |
CN103022093B CN103022093B (zh) | 2015-05-13 |
Family
ID=47970485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110280667.8A Active CN103022093B (zh) | 2011-09-21 | 2011-09-21 | 一种绝缘体上纳米级硅锗材料及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103022093B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103681243A (zh) * | 2013-12-23 | 2014-03-26 | 无锡中微晶园电子有限公司 | 用于改善soi衬底表面损伤的方法 |
CN103928297A (zh) * | 2013-12-28 | 2014-07-16 | 华中科技大学 | 锗硅纳米低维结构的可控制备方法及产品 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6130144A (en) * | 1997-01-02 | 2000-10-10 | Texas Instruments Incorporated | Method for making very shallow junctions in silicon devices |
CN1725448A (zh) * | 2004-06-17 | 2006-01-25 | 三星电子株式会社 | 半导体器件的制造方法、半导体器件和晶体管 |
-
2011
- 2011-09-21 CN CN201110280667.8A patent/CN103022093B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6130144A (en) * | 1997-01-02 | 2000-10-10 | Texas Instruments Incorporated | Method for making very shallow junctions in silicon devices |
CN1725448A (zh) * | 2004-06-17 | 2006-01-25 | 三星电子株式会社 | 半导体器件的制造方法、半导体器件和晶体管 |
Non-Patent Citations (1)
Title |
---|
WENTING XU1等: "GeSi/Si nanostructure formation by Ge ion implantation in (100)silicon wafer", 《SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY》, 31 December 2010 (2010-12-31) * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103681243A (zh) * | 2013-12-23 | 2014-03-26 | 无锡中微晶园电子有限公司 | 用于改善soi衬底表面损伤的方法 |
CN103681243B (zh) * | 2013-12-23 | 2016-06-15 | 无锡中微晶园电子有限公司 | 用于改善soi衬底表面损伤的方法 |
CN103928297A (zh) * | 2013-12-28 | 2014-07-16 | 华中科技大学 | 锗硅纳米低维结构的可控制备方法及产品 |
CN103928297B (zh) * | 2013-12-28 | 2017-04-26 | 华中科技大学 | 锗硅纳米低维结构的可控制备方法及产品 |
Also Published As
Publication number | Publication date |
---|---|
CN103022093B (zh) | 2015-05-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW546713B (en) | Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing | |
US6780796B2 (en) | Method of forming relaxed SiGe layer | |
JP2008211222A (ja) | 半導体層中のドーパント拡散制御プロセス及びそれにより形成された半導体層 | |
CN102324436B (zh) | 大失配硅基衬底锑化物高电子迁移率晶体管及制造方法 | |
CN104882366B (zh) | 一种n型纳米金刚石薄膜/p型单晶硅的异质pn结原型器件及其制备方法 | |
CN102664151A (zh) | 一种用于制造碳化硅器件的高温退火方法 | |
CN105551931B (zh) | 在应变松弛缓冲层上方形成应变外延半导体材料的方法 | |
JP2006080510A (ja) | ホウ素またはヘリウムと、水素とともにシリコンを注入することによって、Ge含有量が高い緩和Si1−XGeX(0<x<1)層を形成する方法 | |
Duffy et al. | Germanium doping challenges | |
US20190221481A1 (en) | Methods for Splitting Semiconductor Devices and Semiconductor Device | |
CN103050432B (zh) | 一种GaAsOI结构及Ⅲ-ⅤOI结构的制备方法 | |
Ruzyllo | Semiconductor Glossary: A Resource For Semiconductor Community | |
CN103022093B (zh) | 一种绝缘体上纳米级硅锗材料及其制备方法 | |
CN102703988A (zh) | 一种基于离子注入技术打开石墨烯带隙的方法 | |
Han et al. | High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate | |
CN103681868B (zh) | 带有源漏应变源的GeSn n沟道金属氧化物半导体场效应晶体管 | |
CN102569364A (zh) | 一种高迁移率衬底结构及其制备方法 | |
Chang et al. | Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure | |
CN103219242B (zh) | 调节多栅结构器件阈值电压的方法 | |
Liu et al. | A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing | |
CN103794474A (zh) | 硅衬底上生长纳米线的衬底处理方法 | |
Ko et al. | Effect of Ge Concentration on the On-Current Boosting of Logic P-Type MOSFET with Sigma-Shaped Source/Drain. Coatings 2021, 11, 654 | |
Duffy et al. | Processing of germanium for integrated circuits | |
CN102403202A (zh) | 一种具有高Ge组分的应变SiGe层的制备方法 | |
CN205211757U (zh) | n型锗生长结构和半导体器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant before: GRINM Semiconductor Materials Co., Ltd. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: GRINM SEMICONDUCTOR MATERIALS CO., LTD. TO: GRINM ADVANCED MATERIALS CO., LTD. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150723 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150723 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: You Yan Semi Materials Co., Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: YOUYAN NEW MATERIAL CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder |