CN103021965A - Light-transmitting package structure and package method based on silicon substrate and glass gland - Google Patents

Light-transmitting package structure and package method based on silicon substrate and glass gland Download PDF

Info

Publication number
CN103021965A
CN103021965A CN2012105863696A CN201210586369A CN103021965A CN 103021965 A CN103021965 A CN 103021965A CN 2012105863696 A CN2012105863696 A CN 2012105863696A CN 201210586369 A CN201210586369 A CN 201210586369A CN 103021965 A CN103021965 A CN 103021965A
Authority
CN
China
Prior art keywords
articulamentum
silicon substrate
printing opacity
mentioned
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012105863696A
Other languages
Chinese (zh)
Inventor
吕致纬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEGO TECHNOLOGY (WUXI) Co Ltd
Original Assignee
SEGO TECHNOLOGY (WUXI) Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEGO TECHNOLOGY (WUXI) Co Ltd filed Critical SEGO TECHNOLOGY (WUXI) Co Ltd
Priority to CN2012105863696A priority Critical patent/CN103021965A/en
Publication of CN103021965A publication Critical patent/CN103021965A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

The invention relates to light-transmitting package structure and package method based on a silicon substrate and a glass gland. The light-transmitting structure comprises a silicon substrate, a package groove is recessed in the silicon substrate, an insulating support layer covers the side wall and partial bottom wall of the package groove, and the side wall and partial bottom wall of the package groove extend to cover the surface of the silicon substrate outside an opening of the package groove. The insulating support layer is provided with a first connecting layer which is provided with a second connecting layer, and a mounting hole penetrates through the insulating support layer, the first connecting layer and the second connecting layer. A light-transmitting chip is disposed in the mounting hole and is electrically connected with the second connecting layer through a connecting wire. The second connecting layer is provided with a glass gland which is located right above the opening of the package groove, and a cavity for light transmittance is formed between the glass gland and the package groove below the glass gland. The second connecting layer is provided with a connecting electrode electrically connected with the same. The light-transmitting package structure is compact in structure, package process is reliable, and the package structure and package method are widely adaptable, safe and practical.

Description

Printing opacity encapsulating structure and method for packing based on silicon substrate and glass capping
Technical field
The present invention relates to a kind of printing opacity encapsulating structure and method for packing, especially a kind of printing opacity encapsulating structure and method for packing based on silicon substrate and glass capping belong to the technical field of semiconductor packages.
Background technology
At present, the sensor chip of printing opacity when encapsulation take ceramic substrate or substrate with pre-envelope resin as carrier, with sensor chip adhesion and routing, then be stained with high light transmittance ratio glass, then sensor encapsulation and reelability soft board adhesion.But existing packaging ceramic substrate cost is high, and the substrate encapsulation structure that seals in advance resin is relatively poor, can not satisfy the requirement of modern semiconductors development.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of printing opacity encapsulating structure and method for packing based on silicon substrate and glass capping is provided, its compact conformation, packaging technology is reliable, and wide accommodation is safe and practical.
According to technical scheme provided by the invention, described printing opacity encapsulating structure based on silicon substrate and glass capping, comprise silicon substrate, be concaved with the encapsulation groove in the described silicon substrate, the sidewall of described encapsulation groove and part diapire are coated with insulation support layer, and described insulation support layer extends the surface that covers encapsulation groove notch outside silicon substrate; Insulation support layer is provided with the first articulamentum, described the first articulamentum is provided with the second articulamentum, the bottom in encapsulation groove center district is by forming installing hole between insulation support layer, the first articulamentum and the second articulamentum, and described installing hole connects insulation support layer, the first articulamentum and the second articulamentum; The printing opacity chip is installed in the installing hole, and described printing opacity chip is electrically connected with the second articulamentum by connecting line; The second articulamentum is provided with glass capping, described glass capping be positioned at encapsulation groove notch directly over, be formed for the cavity of printing opacity between the encapsulation groove of glass capping and below; The second articulamentum is provided with the connecting electrode that is electrically connected with the second articulamentum.
Described printing opacity chip is installed in the installing hole by the chip articulamentum, and is supported in surface of silicon corresponding to encapsulation groove bottom land.
Described connecting electrode is that metal connects spheric electrode or band electrode.
Described glass capping is provided with the connection projection, and described connection projection is provided with the capping articulamentum, and glass capping is connected and fixed by capping articulamentum and the second articulamentum.
Described printing opacity chip comprises image sensor, ambient light source sensor or light-emitting diode.
A kind of printing opacity method for packing based on silicon substrate and glass capping, described printing opacity method for packing comprises the steps:
A, provide required silicon substrate, and at the surface deposition mask layer of described silicon substrate, described mask layer covers the surface of silicon substrate;
B, at described mask layer coating the first photoresist layer;
C, above-mentioned the first photoresist layer is exposed and develops, obtain first window at mask layer, the zone that mask layer is corresponding with first window is exposed;
D, utilize above-mentioned first window that mask layer is carried out etching, the mask layer that etching is corresponding with first window, and obtain Second Window at silicon substrate;
E, above-mentioned the first photoresist layer of removal;
F, utilize above-mentioned mask layer and Second Window that silicon substrate is carried out etching, in silicon substrate, to obtain required encapsulation groove;
Mask layer on g, the removal surface of silicon;
H, at above-mentioned surface of silicon deposit insulation support layer, described insulation support layer covers the surface of sidewall, diapire and the encapsulation groove notch outside silicon substrate of encapsulation groove;
I, at above-mentioned insulation support layer the first articulamentum is set;
J, at above-mentioned the first articulamentum coating the second photoresist layer, and described the second photoresist layer exposed and develops, regional to utilize the second photoresist layer to block the first required articulamentum;
K, at above-mentioned the first articulamentum the second articulamentum is set, described the second articulamentum covers surf zone corresponding to the first articulamentum;
The second photoresist layer on l, removal the first articulamentum is to obtain connecting the 3rd window of the second articulamentum in the bottom that encapsulates groove;
M, utilize above-mentioned the 3rd window etching the first articulamentum, to obtain connecting the four-light mouth of the first articulamentum and the second articulamentum;
N, utilize above-mentioned four-light mouth etching insulation support layer, above silicon substrate, to obtain connecting the 5th window of insulation support layer, the first articulamentum and the second articulamentum;
O, provide required printing opacity chip, and described printing opacity chip is installed on the bottom of the 5th window, the printing opacity chip is supported on the silicon substrate;
P, utilize connecting line to be electrically connected with the second articulamentum above-mentioned printing opacity chip;
Q, provide the high light transmittance glass wafer;
R, at above-mentioned high light transmittance glass wafer coating the 3rd photoresist layer, and described the 3rd photoresist layer exposed and develops, above the high light transmittance glass wafer, to obtain the 6th window;
S, utilize above-mentioned the 6th window that the high light transmittance glass wafer is carried out etching, and remove described the 3rd photoresist layer, to obtain being positioned at the connection projection on the high light transmittance glass wafer;
T, at above-mentioned connection projection printing capping articulamentum;
U, utilize the capping articulamentum to be fastened on the second articulamentum of above-mentioned silicon substrate top above-mentioned high light transmittance glass wafer, the capping articulamentum is positioned at the outside of encapsulation groove notch;
V, above-mentioned high light transmittance glass wafer is cut, to obtain being positioned at the glass capping directly over the encapsulation groove at silicon substrate;
W, above-mentioned silicon substrate is carried out the cutting of required Silicon Wafer, to obtain required printing opacity encapsulating structure;
X, make required connecting electrode at above-mentioned printing opacity encapsulating structure.
Among the described step x, described connecting electrode is that metal connects spheric electrode or band electrode, and connecting electrode is electrically connected with the second articulamentum.
The material of described mask layer is silicon nitride.Described insulation support layer is silicon dioxide layer.Described printing opacity chip comprises image sensor, ambient light source sensor or light-emitting diode.
Advantage of the present invention: the encapsulation groove is set in silicon substrate; in the encapsulation groove insulation support layer, the first articulamentum and the second articulamentum are set; and be formed for installing the installing hole of printing opacity chip in the groove in encapsulation; after the printing opacity chip is installed in the installing hole; glass capping is fastened on the second articulamentum; realization is to the protection of printing opacity chip; cavity between glass capping and the silicon substrate can be as the passage of light transmition simultaneously; to satisfy the job requirement of printing opacity chip; its compact conformation; packaging technology is reliable, and wide accommodation is safe and practical.
Description of drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 ~ Figure 26 is the cutaway view of implementation processing step of the present invention, wherein:
Fig. 2 is the cutaway view of the present invention after silicon substrate obtains mask layer.
Fig. 3 is the cutaway view of the present invention after silicon substrate obtains the first photoresist layer.
Fig. 4 is the cutaway view after the present invention obtains first window.
Fig. 5 is the cutaway view after the present invention obtains Second Window.
Fig. 6 is the cutaway view after the present invention removes the first photoresist layer.
Fig. 7 is the cutaway view the present invention obtains encapsulating groove in silicon substrate after.
Fig. 8 is the cutaway view after the present invention removes mask layer.
Fig. 9 is the cutaway view after deposit of the present invention obtains insulation support layer.
Figure 10 is the cutaway view of the present invention after insulation support layer obtains the first articulamentum.
Figure 11 be the present invention on the first articulamentum the second photoresist layer exposed and develop after cutaway view.
Figure 12 is the cutaway view of the present invention after the first articulamentum obtains the second articulamentum.
Figure 13 is that the present invention removes the cutaway view after the second photoresist layer obtains the 3rd window.
Figure 14 is the cutaway view after the present invention obtains the four-light mouth.
Figure 15 is the cutaway view after the present invention obtains the 5th window.
Figure 16 is the cutaway view after the present invention installs the printing opacity chip.
Figure 17 is printing opacity chip of the present invention by connecting line and cutaway view after the second articulamentum is electrically connected.
Figure 18 is the cutaway view of high light transmittance glass wafer of the present invention.
Figure 19 is the cutaway view of the present invention behind high light transmittance glass wafer coating the 3rd photoresist layer and exposure imaging.
To be the present invention carry out cutaway view after etching obtains connecting projection to the high light transmittance glass wafer to Figure 20.
Figure 21 is that the present invention is at the cutaway view that connects after projection obtains the capping articulamentum.
The cutaway view of Figure 22 after to be the present invention with high light transmittance glass wafer and silicon substrate be connected and fixed.
Figure 23 is the cutaway view after the present invention cuts the high light transmittance glass wafer.
Figure 24 is the cutaway view after the present invention cuts silicon substrate.
Figure 25 is the present invention forms band electrode at the second articulamentum cutaway view.
Figure 26 is that the present invention forms the cutaway view that metal connects sphere pole at the second articulamentum.
Description of reference numerals: 1-silicon substrate, the 2-insulation support layer, 3-chip articulamentum, 4-the first articulamentum, 5-printing opacity chip, the 6-connecting line, 7-the second articulamentum, the 8-band electrode, the 9-glass capping, 10-capping articulamentum, the 11-installing hole, the 12-cavity, the 13-mask layer, 14-the first photoresist layer, the 15-first window, the 16-Second Window, 17-encapsulates groove, 18-the second photoresist layer, 19-the 3rd window, 20-four-light mouth, 21-the 5th window, 22-high light transmittance glass wafer, 23-the 3rd photoresist layer, 24-the 6th window, 25-connects projection, 26-the 7th window and 27-metal connect spheric electrode.
Embodiment
The invention will be further described below in conjunction with concrete drawings and Examples.
As shown in Figure 1: in order to realize relieved package to printing opacity chip 5, the present invention includes silicon substrate 1, be concaved with encapsulation groove 17 in the described silicon substrate 1, the sidewall of described encapsulation groove 17 and part diapire are coated with insulation support layer 2, and described insulation support layer 2 extends the surface that covers encapsulation groove 17 notches outside silicon substrate 1; Insulation support layer 2 is provided with the first articulamentum 4, described the first articulamentum 4 is provided with the second articulamentum 7, the bottom of encapsulation groove 17 centers forms installing hole 11 by insulation support layer 2, the first articulamentum 4 and 7 of the second articulamentums, and described installing hole 11 connects insulation support layer 2, the first articulamentum 4 and the second articulamentum 7; Printing opacity chip 5 is installed in the installing hole 11, and described printing opacity chip 5 is electrically connected with the second articulamentum 7 by connecting line 6; The second articulamentum 7 is provided with glass capping 9, described glass capping 9 be positioned at encapsulation groove 17 notches directly over, 17 of the encapsulation grooves of glass capping 9 and below are formed for the cavity 12 of printing opacity; The second articulamentum 7 is provided with the connecting electrode that is electrically connected with the second articulamentum 7.
Particularly, described printing opacity chip 5 is installed in the installing hole 11 by chip articulamentum 3, and is supported in silicon substrate 1 surface corresponding to encapsulation groove 17 bottom lands.Described connecting electrode is that metal connects spheric electrode 27 or band electrode 8.Described glass capping 9 is provided with and connects projection 25, and described connection projection 25 is provided with capping articulamentum 10, and glass capping 9 is connected and fixed by capping articulamentum 10 and the second articulamentum 7.Described printing opacity chip 5 comprises image sensor, ambient light source sensor or light-emitting diode.Printing opacity chip 5 is realized receiving extraneous light by cavity 12 and glass capping 9 or the light transmission is gone out.
Shown in Fig. 2 ~ 26: above-mentioned printing opacity encapsulating structure can adopt following processing step to prepare, and described concrete preparation technology comprises the steps:
A, provide required silicon substrate 1, and at the surface deposition mask layer 13 of described silicon substrate 1, described mask layer 13 covers the surface of silicon substrates 1;
As shown in Figure 2, described mask layer 13 is silicon nitride layer, utilizes mask layer 13 to carry out etching to silicon substrate 1;
B, at described mask layer 13 coatings the first photoresist layer 14, as shown in Figure 3, the surface of the first photoresist layer 14 mask film covering layers 13;
C, above-mentioned the first photoresist layer 14 is exposed and develops, obtain first window 15 at mask layer 13, the zone that mask layer 13 and first window 15 are corresponding is exposed;
As shown in Figure 4: after the first photoresist layer 14 exposed and develop, obtain first window 15 at mask layer 13,, mask layer 13 is exposed by first window 15, and the position of first window 15 arranges as required, and personnel are known by the art;
D, utilize 15 pairs of mask layers of above-mentioned first window 13 to carry out etching, the mask layer 13 that etching and first window 15 are corresponding, and obtain Second Window 16 at silicon substrate 1;
As shown in Figure 5: because mask layer 13 and first window 15 corresponding zones expose, etching technics by routine, mask layer 13 in the first window 15 is etched away, can reach Second Window 16, Second Window 16 extends downward the surface of silicon substrate 1 from the upper surface of the first photoresist layer 14;
E, above-mentioned the first photoresist layer 14 of removal; As shown in Figure 6, obtain Second Window 16 after, unwanted the first photoresist layer 14 in the technique is removed;
F, utilize above-mentioned mask layer 13 and 16 pairs of silicon substrates of Second Window 1 to carry out etching, in silicon substrate 1, to obtain required encapsulation groove 17; As shown in Figure 7: utilize mask layer 13 as blocking, silicon substrate 1 is carried out etching, obtain encapsulating groove 17 in silicon substrate 1, the notch position of described encapsulation groove 17 is corresponding with Second Window 16;
G, removal silicon substrate 1 lip-deep mask layer 13; As shown in Figure 8, obtain encapsulating behind the groove 17 mask layer 13 is removed, to carry out follow-up required processing step;
H, at above-mentioned silicon substrate 1 surface deposition insulation support layer 2, described insulation support layer 2 covers the surface of sidewall, diapire and the encapsulation groove 17 notches outside silicon substrate 1 of encapsulation grooves 17;
As shown in Figure 9: described insulation support layer 2 is silicon dioxide layer, utilizes silicon dioxide layer to realize the purpose of insulating supporting;
I, at above-mentioned insulation support layer 2 the first articulamentum 4 is set;
As shown in figure 10: described the first articulamentum 4 is composite bed, the first articulamentum 4 comprises and sputters at the titanium coating on the insulation support layer 2 and sputter at nickel metal layer on the described titanium coating, because insulation support layer 2 is silicon dioxide layer, utilize titanium coating can realize with insulation support layer 2 between be connected, utilize nickel metal layer can realize with the second articulamentum 7 between be connected, the preparation technology of the first articulamentum 4 and lamination layer structure are the art to be known, for technological means and technological requirement by routine prepare.
J, at above-mentioned the first articulamentum 4 coating the second photoresist layer 18, and described the second photoresist layer 18 exposed and develops, block required the first articulamentum 4 zones to utilize the second photoresist layer 18;
As shown in figure 11: after being coated with the second photoresist layer 18, the second photoresist layer 18 covers the surface of the first articulamentum 4, in order to access the second required articulamentum 7, the second photoresist layer 18 is exposed and develop, keep the second photoresist layer 18 that is positioned at encapsulation groove 17 centers;
K, at above-mentioned the first articulamentum 4 the second articulamentum 7 is set, described the second articulamentum 7 covers the surf zone of the first articulamentum 4 correspondences;
As shown in figure 12: described the second articulamentum 7 is similarly lamination layer structure, the second articulamentum comprises to be electroplated the nickel metal layer on the first articulamentum 4 and is plated on gold layer on the described nickel metal layer, by nickel metal layer can realize with the first articulamentum 4 between be connected, utilize being connected between the realization of gold layer and outside and the connecting electrode; The preparation technology of the second articulamentum 7 and composite construction are the art to be known, for technological means and technological requirement by routine prepare; In the embodiment of the invention, the second articulamentum 7 covers not by on the first articulamentum 4 of the second photoresist layer 18 coverings.
The second photoresist layer 18 on l, removal the first articulamentum 4 is to obtain connecting the 3rd window 19 of the second articulamentum 7 in the bottom that encapsulates groove 17;
As shown in figure 13: after removing the second photoresist layer 18, obtain the 3rd window 19 at the regional location of the second photoresist layer 18 before, described the 3rd window 19 extends to the surface of the first articulamentum 4 from the upper surface of the second articulamentum 7, namely form the pore structure that connects the second articulamentum 7;
M, utilize above-mentioned the 3rd window 19 etchings the first articulamentum 4, to obtain connecting the four-light mouth 20 of the first articulamentum 4 and the second articulamentum 7;
As shown in figure 14: corresponding consistent with the 3rd window 19 to the zone of the first articulamentum 4 etchings after utilizing 19 pairs of the first articulamentums 4 of the 3rd window to carry out etching, obtain four-light mouth 20 after etching away the first articulamentum 4;
N, utilize above-mentioned four-light mouth 20 etching insulation support layers 2, above silicon substrate 1, to obtain connecting the 5th window 21 of insulation support layer 2, the first articulamentum 4 and the second articulamentum 7;
As shown in figure 15, utilize 21 pairs of insulation support layers of four-light mouth 2 to carry out etching, after will etching away in the insulation support layer 2 of four-light mouth 21 correspondences, form the surface that the 5th window 21, the five windows 21 extend to silicon substrate 1, also namely encapsulate the bottom of groove 17;
O, provide required printing opacity chip 5, and described printing opacity chip 5 is installed on the bottom of the 5th window 21, printing opacity chip 5 is supported on the silicon substrate 1;
As shown in figure 16, after the above-mentioned technique of process, form installing hole 11 between the 5th window 21 and the first articulamentum 4, the second articulamentum 7 and the insulation support layer 2, be that installing hole 11 is corresponding with the 5th window 21, printing opacity chip 5 is installed in the installing hole 11 by chip articulamentum 3, and printing opacity chip 5 is realized and being fixedly connected with of silicon substrate 1 by chip articulamentum 3; Chip articulamentum 3 adopts conventional connecting material.
P, utilize connecting line 6 to be electrically connected with the second articulamentum 7 above-mentioned printing opacity chip 5; As shown in figure 17: printing opacity chip 5 is connected with the second articulamentum 7 by routing or bonding wire mode, after the second articulamentum 7 is electrically connected, can pass through being connected of connecting electrode and external circuit on the second articulamentum 7 or the second articulamentum 7;
Q, provide high light transmittance glass wafer 22;
As shown in figure 18, described high light transmittance glass wafer 22 can adopt conventional capping glass;
R, at above-mentioned high light transmittance glass wafer 22 coatings the 3rd photoresist layer 23, and described the 3rd photoresist layer 23 exposed and develops, above high light transmittance glass wafer 22, to obtain the 6th window 24;
As shown in figure 19: at high light transmittance glass wafer 22 coatings the 3rd photoresist layer 23, to realize that high light transmittance glass wafer 22 is carried out etching, form the 6th window 24 between the surface of the 3rd photoresist layer 23 and high light transmittance glass wafer 22;
S, utilize 24 pairs of high light transmittance glass wafers of above-mentioned the 6th window 22 to carry out etching, and remove described the 3rd photoresist layer 23, to obtain being positioned at the connection projection 25 on the high light transmittance glass wafer 22;
As shown in figure 20: adopt conventional lithographic technique means that high light transmittance glass wafer 22 is carried out etching, remove the zone corresponding with the 6th window 24, after etching technics is finished, remove the 3rd photoresist layer 23, formation protrudes from the connection projection 25 on the high light transmittance glass wafer 22, forms the 7th window 26 between the surface of connection projection 25 and high light transmittance glass wafer 22;
T, at above-mentioned connection projection 25 printing capping articulamentums 10; As shown in figure 21: described capping articulamentum 10 is formed on by printing and connects on the projection 25, and capping articulamentum 10 adopts the connecting material of benzocyclobutene (Benzocyclobutene, BCB) to make;
U, utilize capping articulamentum 10 to be fastened on the second articulamentum 7 of above-mentioned silicon substrate 1 top above-mentioned high light transmittance glass wafer 22, capping articulamentum 10 is positioned at the outside of encapsulation groove 17 notches;
As shown in figure 22: in order to protect printing opacity chip 5, the high light transmittance glass wafer 22 after the above-mentioned processing is fastened on the second articulamentum 7 by capping articulamentum 10;
V, above-mentioned high light transmittance glass wafer 22 is cut, to obtain being positioned at the glass capping 9 directly over the encapsulation groove 17 at silicon substrate 1;
As shown in figure 23: according to the position of printing opacity chip 5, the unwanted high light transmittance glass wafer 22 in excision encapsulation groove 17 both sides, to realize obtaining the glass capping 9 of printing opacity chip 5 tops, namely glass capping 9 is for 22 cuttings obtain to the high light transmittance glass wafer;
W, above-mentioned silicon substrate 1 is carried out the cutting of required Silicon Wafer, to obtain required printing opacity encapsulating structure;
As shown in figure 24: in order to access the encapsulating structure of single printing opacity chip 5, need to cut silicon substrate 1, in the embodiment of the invention, conventional semiconductor cutting technique all be adopted in the cutting of silicon substrate 1 and high light transmittance glass wafer 22;
X, make required connecting electrode at above-mentioned printing opacity encapsulating structure.
After 1 cutting is finished to silicon substrate, need to make connecting electrode at encapsulating structure, with being connected by connecting electrode and external circuit, in the embodiment of the invention, difference according to concrete type of attachment, connecting electrode comprises that metal connects spheric electrode 27 or band electrode 8, wherein, Figure 25 shows the structure that band electrode 8 is set on the second articulamentum 7, Figure 26 shows metal connection spheric electrode 27 is set on the second articulamentum 7, when specific embodiment, the height of metal connection spheric electrode 27 is higher than the height of glass capping 9, be connected with the contact of external circuit in order to connect spheric electrode 27 by metal, in the embodiment of the invention, Figure 26 only shows at the second articulamentum 7 structure that metal connects spheric electrode 27 is set.In the embodiment of the invention, the material of connecting electrode can adopt gold commonly used.
The present invention is at the silicon substrate 1 interior encapsulation groove 17 that arranges; encapsulation groove 17 interior insulation support layer 2, the first articulamentum 4 and the second articulamentums 7 of arranging; and be formed for installing the installing hole 11 of printing opacity chip 5 in the groove 17 in encapsulation; printing opacity chip 5 be installed on installing hole 11 interior after; glass capping 9 is fastened on the second articulamentum 7; realization is to the protection of printing opacity chip 5; cavity 12 between glass capping 9 and the silicon substrate 1 can be as the passage of light transmition simultaneously; to satisfy the job requirement of printing opacity chip 5; its compact conformation; packaging technology is reliable, and wide accommodation is safe and practical.

Claims (10)

1. printing opacity encapsulating structure based on silicon substrate and glass capping, it is characterized in that: comprise silicon substrate (1), be concaved with encapsulation groove (17) in the described silicon substrate (1), the sidewall of described encapsulation groove (17) and part diapire are coated with insulation support layer (2), and described insulation support layer (2) extends the surface that covers encapsulation groove (17) notch outside silicon substrate (1); Insulation support layer (2) is provided with the first articulamentum (4), described the first articulamentum (4) is provided with the second articulamentum (7), the bottom of encapsulation groove (17) center is by forming installing hole (11) between insulation support layer (2), the first articulamentum (4) and the second articulamentum (7), and described installing hole (11) connects insulation support layer (2), the first articulamentum (4) and the second articulamentum (7); Printing opacity chip (5) is installed in the installing hole (11), and described printing opacity chip (5) is electrically connected with the second articulamentum (7) by connecting line (6); The second articulamentum (7) is provided with glass capping (9), described glass capping (9) be positioned at encapsulation groove (17) notch directly over, be formed for the cavity (12) of printing opacity between the encapsulation groove (17) of glass capping (9) and below; The second articulamentum (7) is provided with the connecting electrode that is electrically connected with the second articulamentum (7).
2. the printing opacity encapsulating structure based on silicon substrate and glass capping according to claim 1, it is characterized in that: described printing opacity chip (5) is installed in the installing hole (11) by chip articulamentum (3), and is supported in silicon substrate (1) surface corresponding to encapsulation groove (17) bottom land.
3. the printing opacity encapsulating structure based on silicon substrate and glass capping according to claim 1 is characterized in that: described connecting electrode is that metal connects spheric electrode (27) or band electrode (8).
4. the printing opacity encapsulating structure based on silicon substrate and glass capping according to claim 1, it is characterized in that: described glass capping (9) is provided with and connects projection (25), described connection projection (25) is provided with capping articulamentum (10), and glass capping (9) is connected and fixed by capping articulamentum (10) and the second articulamentum (7).
5. the printing opacity encapsulating structure based on silicon substrate and glass capping according to claim 1, it is characterized in that: described printing opacity chip (5) comprises image sensor, ambient light source sensor or light-emitting diode.
6. the printing opacity method for packing based on silicon substrate and glass capping is characterized in that, described printing opacity method for packing comprises the steps:
(a), required silicon substrate (1) is provided, and at the surface deposition mask layer (13) of described silicon substrate (1), described mask layer (13) covers the surface of silicon substrate (1);
(b), at described mask layer (13) coating the first photoresist layer (14);
(c), above-mentioned the first photoresist layer (14) is exposed and develops, obtain first window (15) at mask layer (13), the zone that mask layer (13) is corresponding with first window (15) is exposed;
(d), utilize above-mentioned first window (15) that mask layer (13) is carried out etching, the mask layer (13) that etching is corresponding with first window (15), and obtain Second Window (16) at silicon substrate (1);
(e), remove above-mentioned the first photoresist layer (14);
(f), utilize above-mentioned mask layer (13) and Second Window (16) that silicon substrate (1) is carried out etching, in silicon substrate (1), to obtain required encapsulation groove (17);
(g), remove the lip-deep mask layer of silicon substrate (1) (13);
(h), at above-mentioned silicon substrate (1) surface deposition insulation support layer (2), described insulation support layer (2) covers the surface of sidewall, diapire and encapsulation groove (17) the notch outside silicon substrate (1) of encapsulation groove (17);
(i), at above-mentioned insulation support layer (2) the first articulamentum (4) is set;
(j), at above-mentioned the first articulamentum (4) coating the second photoresist layer (18), and described the second photoresist layer (18) exposed and develops, block required the first articulamentum (4) zone to utilize the second photoresist layer (18);
(k), at above-mentioned the first articulamentum (4) the second articulamentum (7) is set, the surf zone that described the second articulamentum (7) covering the first articulamentum (4) is corresponding;
(l), remove the second photoresist layer (18) on the first articulamentum (4), to obtain connecting the 3rd window (19) of the second articulamentum (7) in the bottom that encapsulates groove (17);
(m), utilize above-mentioned the 3rd window (19) etching the first articulamentum (4), to obtain connecting the four-light mouth (20) of the first articulamentum (4) and the second articulamentum (7);
(n), utilize above-mentioned four-light mouth (20) etching insulation support layer (2), to obtain connecting the 5th window (21) of insulation support layer (2), the first articulamentum (4) and the second articulamentum (7) in silicon substrate (1) top;
(o), required printing opacity chip (5) is provided, and described printing opacity chip (5) is installed on the bottom of the 5th window (21), printing opacity chip (5) is supported on the silicon substrate (1);
(p), above-mentioned printing opacity chip (5) is utilized connecting line (6) be electrically connected with the second articulamentum (7);
(q), provide high light transmittance glass wafer (22);
(r), at above-mentioned high light transmittance glass wafer (22) coating the 3rd photoresist layer (23), and described the 3rd photoresist layer (23) exposed and develops, above high light transmittance glass wafer (22), to obtain the 6th window (24);
(s), utilize above-mentioned the 6th window (24) that high light transmittance glass wafer (22) is carried out etching, and remove described the 3rd photoresist layer (23), to obtain being positioned at the connection projection (25) on the high light transmittance glass wafer (22);
(t), at above-mentioned connection projection (25) printing capping articulamentum (10);
(u), utilize capping articulamentum (10) to be fastened on second articulamentum (7) of above-mentioned silicon substrate (1) top above-mentioned high light transmittance glass wafer (22), capping articulamentum (10) is positioned at the outside of encapsulation groove (17) notch;
(v), above-mentioned high light transmittance glass wafer (22) is cut, to obtain being positioned at the glass capping (9) directly over the encapsulation groove (17) at silicon substrate (1);
(w), above-mentioned silicon substrate (1) is carried out required Silicon Wafer cutting, to obtain required printing opacity encapsulating structure;
(x), make required connecting electrode at above-mentioned printing opacity encapsulating structure.
7. described printing opacity method for packing based on silicon substrate and glass capping according to claim 6, it is characterized in that: in the described step (x), described connecting electrode is that metal connects spheric electrode (27) or band electrode (8), and connecting electrode is electrically connected with the second articulamentum (7).
8. described printing opacity method for packing based on silicon substrate and glass capping according to claim 6, it is characterized in that: the material of described mask layer (13) is silicon nitride.
9. described printing opacity method for packing based on silicon substrate and glass capping according to claim 6, it is characterized in that: described insulation support layer (2) is silicon dioxide layer.
10. described printing opacity method for packing based on silicon substrate and glass capping according to claim 6, it is characterized in that: described printing opacity chip (5) comprises image sensor, ambient light source sensor or light-emitting diode.
CN2012105863696A 2012-12-28 2012-12-28 Light-transmitting package structure and package method based on silicon substrate and glass gland Pending CN103021965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012105863696A CN103021965A (en) 2012-12-28 2012-12-28 Light-transmitting package structure and package method based on silicon substrate and glass gland

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012105863696A CN103021965A (en) 2012-12-28 2012-12-28 Light-transmitting package structure and package method based on silicon substrate and glass gland

Publications (1)

Publication Number Publication Date
CN103021965A true CN103021965A (en) 2013-04-03

Family

ID=47970405

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012105863696A Pending CN103021965A (en) 2012-12-28 2012-12-28 Light-transmitting package structure and package method based on silicon substrate and glass gland

Country Status (1)

Country Link
CN (1) CN103021965A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104992908A (en) * 2015-07-14 2015-10-21 华进半导体封装先导技术研发中心有限公司 Manufacturing method of ultrathin seal cover in wafer-level package
CN108012416A (en) * 2017-12-25 2018-05-08 佛山市车品匠汽车用品有限公司 A kind of self-powered multifunction flexible circuit board
CN108155179A (en) * 2017-12-25 2018-06-12 佛山市车品匠汽车用品有限公司 One kind has gas detection function semiconductor devices
CN116299850A (en) * 2023-05-15 2023-06-23 甬矽电子(宁波)股份有限公司 Silicon photon packaging structure and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1427487A (en) * 2001-12-20 2003-07-02 翰立光电股份有限公司 Packaging structure of display element and its packaging method
US20040070076A1 (en) * 2002-10-11 2004-04-15 Yoshiaki Hayashimoto Semiconductor chip package for image sensor and method of the same
CN201364594Y (en) * 2009-01-14 2009-12-16 中山达华智能科技股份有限公司 Ultrathin-type RFID (radio frequency identification) electronic ticket card
CN102339844A (en) * 2011-10-08 2012-02-01 江阴长电先进封装有限公司 Implementation method for silicon-free through hole low-cost image sensor packaging structure
CN203013700U (en) * 2012-12-28 2013-06-19 矽格微电子(无锡)有限公司 Light transmission packaging structure based on silicon substrate and glass seal cover

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1427487A (en) * 2001-12-20 2003-07-02 翰立光电股份有限公司 Packaging structure of display element and its packaging method
US20040070076A1 (en) * 2002-10-11 2004-04-15 Yoshiaki Hayashimoto Semiconductor chip package for image sensor and method of the same
CN201364594Y (en) * 2009-01-14 2009-12-16 中山达华智能科技股份有限公司 Ultrathin-type RFID (radio frequency identification) electronic ticket card
CN102339844A (en) * 2011-10-08 2012-02-01 江阴长电先进封装有限公司 Implementation method for silicon-free through hole low-cost image sensor packaging structure
CN203013700U (en) * 2012-12-28 2013-06-19 矽格微电子(无锡)有限公司 Light transmission packaging structure based on silicon substrate and glass seal cover

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104992908A (en) * 2015-07-14 2015-10-21 华进半导体封装先导技术研发中心有限公司 Manufacturing method of ultrathin seal cover in wafer-level package
CN104992908B (en) * 2015-07-14 2017-12-22 华进半导体封装先导技术研发中心有限公司 The preparation method of ultra-thin capping in a kind of wafer-level packaging
CN108012416A (en) * 2017-12-25 2018-05-08 佛山市车品匠汽车用品有限公司 A kind of self-powered multifunction flexible circuit board
CN108155179A (en) * 2017-12-25 2018-06-12 佛山市车品匠汽车用品有限公司 One kind has gas detection function semiconductor devices
CN108012416B (en) * 2017-12-25 2020-06-02 江苏蓝特电路板有限公司 Self-powered multifunctional flexible circuit board
CN108155179B (en) * 2017-12-25 2020-08-04 森强(杭州)科技有限公司 Semiconductor device with gas detection function
CN116299850A (en) * 2023-05-15 2023-06-23 甬矽电子(宁波)股份有限公司 Silicon photon packaging structure and preparation method thereof
CN116299850B (en) * 2023-05-15 2023-09-05 甬矽电子(宁波)股份有限公司 Silicon photon packaging structure and preparation method thereof

Similar Documents

Publication Publication Date Title
CN104303262B (en) For the technique of a portion exposure sealing MEMS device at ambient
CN102856336B (en) Wafer encapsulation body and forming method thereof
US9177919B2 (en) Chip package and method for forming the same
CN102079502B (en) MEMS (micro electro mechanical system) device and wafer-level vacuum packaging method thereof
CN102157462A (en) Chip package and fabrication method thereof
CN101847664B (en) Electron device package and method for manufacturing same
CN102774805B (en) Wafer encapsulation body and forming method thereof
US20140374917A1 (en) Component in the form of a wafer level package and method for manufacturing same
CN102786026B (en) Film seal cap packaging structure for MEMS (micro electro mechanical system) optical device and manufacturing method of film seal cap packaging structure
CN101156242A (en) Method for the production of enclosed electronic components, and enclosed electronic component
CN102082131B (en) Wafer encapsulation body and manufacture method thereof
CN102209683B (en) There is the MEMS encapsulation that sidewall reveals protection
JP2007027279A (en) Semiconductor device and manufacturing method thereof
CN103489846A (en) Chip package and method for forming the same
CN103021965A (en) Light-transmitting package structure and package method based on silicon substrate and glass gland
CN101905855B (en) Method for encapsulating a wafer level microdevice
US7833815B2 (en) Microelectromechanical system package and the method for manufacturing the same
CN102637713A (en) Method for packaging image sensor comprising metal micro-bumps
CN102623477A (en) Image sensing module, encapsulation structure and encapsulation method of encapsulation structure
CN102779800B (en) Wafer encapsulation body and forming method thereof
CN203013700U (en) Light transmission packaging structure based on silicon substrate and glass seal cover
CN107445135A (en) Semiconductor devices and its method for packing
CN102001613B (en) Microelectronic device and manufacturing method thereof, and micro electromechanical packaging structure and packaging method thereof
US8378433B2 (en) Semiconductor device with a controlled cavity and method of formation
CN104037135B (en) Wafer encapsulation body and forming method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
AD01 Patent right deemed abandoned

Effective date of abandoning: 20160406

C20 Patent right or utility model deemed to be abandoned or is abandoned