CN103021803A - 保护厚金属层光刻对准标记的方法 - Google Patents
保护厚金属层光刻对准标记的方法 Download PDFInfo
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- CN103021803A CN103021803A CN2011102888235A CN201110288823A CN103021803A CN 103021803 A CN103021803 A CN 103021803A CN 2011102888235 A CN2011102888235 A CN 2011102888235A CN 201110288823 A CN201110288823 A CN 201110288823A CN 103021803 A CN103021803 A CN 103021803A
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103663361A (zh) * | 2013-12-30 | 2014-03-26 | 哈尔滨理工大学 | 一种硅基片或陶瓷基片的柔性机械光刻剥离工艺方法 |
CN106025094A (zh) * | 2016-05-04 | 2016-10-12 | 京东方科技集团股份有限公司 | 封装玻璃上的对位标记及其制造方法、oled及其生产方法 |
CN106876252A (zh) * | 2017-02-14 | 2017-06-20 | 上海华虹宏力半导体制造有限公司 | 半导体器件的刻蚀方法 |
CN109686654A (zh) * | 2018-12-26 | 2019-04-26 | 上海芯钛信息科技有限公司 | 一种改善Lift-off工艺划片道形貌的方法 |
CN113725196A (zh) * | 2021-08-31 | 2021-11-30 | 长江存储科技有限责任公司 | 半导体结构及其形成方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1397986A (zh) * | 2001-07-23 | 2003-02-19 | 北京大学 | 金属剥离方法 |
US20050009287A1 (en) * | 2003-07-10 | 2005-01-13 | Samsung Electronics Co., Ltd. | Alignment mark and method for manufacturing a semiconductor device having the same |
CN1778505A (zh) * | 2004-11-19 | 2006-05-31 | 中国科学院高能物理研究所 | 电火花加工用的极长异形微细电极的制造方法 |
CN1979340A (zh) * | 2005-11-30 | 2007-06-13 | 中国科学院微电子研究所 | 纳米压印和光学光刻匹配混合的声表面波器件制备方法 |
CN102054667A (zh) * | 2009-10-29 | 2011-05-11 | 北大方正集团有限公司 | 应用光刻胶剥离工艺保护光刻对准标记的方法 |
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- 2011-09-26 CN CN2011102888235A patent/CN103021803A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1397986A (zh) * | 2001-07-23 | 2003-02-19 | 北京大学 | 金属剥离方法 |
US20050009287A1 (en) * | 2003-07-10 | 2005-01-13 | Samsung Electronics Co., Ltd. | Alignment mark and method for manufacturing a semiconductor device having the same |
CN1778505A (zh) * | 2004-11-19 | 2006-05-31 | 中国科学院高能物理研究所 | 电火花加工用的极长异形微细电极的制造方法 |
CN1979340A (zh) * | 2005-11-30 | 2007-06-13 | 中国科学院微电子研究所 | 纳米压印和光学光刻匹配混合的声表面波器件制备方法 |
CN102054667A (zh) * | 2009-10-29 | 2011-05-11 | 北大方正集团有限公司 | 应用光刻胶剥离工艺保护光刻对准标记的方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103663361A (zh) * | 2013-12-30 | 2014-03-26 | 哈尔滨理工大学 | 一种硅基片或陶瓷基片的柔性机械光刻剥离工艺方法 |
CN103663361B (zh) * | 2013-12-30 | 2016-03-23 | 哈尔滨理工大学 | 一种硅基片或陶瓷基片的柔性机械光刻剥离工艺方法 |
CN106025094A (zh) * | 2016-05-04 | 2016-10-12 | 京东方科技集团股份有限公司 | 封装玻璃上的对位标记及其制造方法、oled及其生产方法 |
CN106876252A (zh) * | 2017-02-14 | 2017-06-20 | 上海华虹宏力半导体制造有限公司 | 半导体器件的刻蚀方法 |
CN106876252B (zh) * | 2017-02-14 | 2019-08-23 | 上海华虹宏力半导体制造有限公司 | 半导体器件的刻蚀方法 |
CN109686654A (zh) * | 2018-12-26 | 2019-04-26 | 上海芯钛信息科技有限公司 | 一种改善Lift-off工艺划片道形貌的方法 |
CN109686654B (zh) * | 2018-12-26 | 2021-11-26 | 上海芯钛信息科技有限公司 | 一种改善Lift-off工艺划片道形貌的方法 |
CN113725196A (zh) * | 2021-08-31 | 2021-11-30 | 长江存储科技有限责任公司 | 半导体结构及其形成方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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