CN103018826B - Directional coupler for photonic crystals - Google Patents

Directional coupler for photonic crystals Download PDF

Info

Publication number
CN103018826B
CN103018826B CN201210556764.XA CN201210556764A CN103018826B CN 103018826 B CN103018826 B CN 103018826B CN 201210556764 A CN201210556764 A CN 201210556764A CN 103018826 B CN103018826 B CN 103018826B
Authority
CN
China
Prior art keywords
medium
medium post
directional coupler
racetrack
photonic crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210556764.XA
Other languages
Chinese (zh)
Other versions
CN103018826A (en
Inventor
崔乃迪
郭进
冯俊波
滕婕
王皖君
周杰
曹国威
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Center Co Ltd
Original Assignee
ACADEMY OF PUBLIC SECURITY TECHNOLOGY HEFEI
CETC 38 Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ACADEMY OF PUBLIC SECURITY TECHNOLOGY HEFEI, CETC 38 Research Institute filed Critical ACADEMY OF PUBLIC SECURITY TECHNOLOGY HEFEI
Priority to CN201210556764.XA priority Critical patent/CN103018826B/en
Publication of CN103018826A publication Critical patent/CN103018826A/en
Application granted granted Critical
Publication of CN103018826B publication Critical patent/CN103018826B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Optical Integrated Circuits (AREA)

Abstract

The invention discloses a directional coupler for photonic crystals. The directional coupler comprises a base board and a plurality of dielectric cylinders, wherein the dielectric cylinders are vertically arranged on the base board. A main waveguide line defect and a coupling waveguide line defect which are mutually independent are enclosed by the dielectric cylinders, at least one row of runway-shaped dielectric cylinders are spaced between the main waveguide line defect and the coupling waveguide line defect, and the rest dielectric cylinders are cylindrical. The directional coupler has the advantages that the coupling cycle of electromagnetic waves in the directional coupler is greatly shortened, so that the size of the coupler is reduced, the directional coupler is small in size, compact in structure, high in efficiency and integration level and the like, and an effective way for manufacturing a waveguide coupler and a wavelength division multiplexing device with smaller channel intervals on the fixed size is provided as the coupling cycle is shortened.

Description

A kind of photonic crystal directional coupler
Technical field
The present invention relates to a kind of coupling mechanism, relate in particular to a kind of photonic crystal directional coupler.
Background technology
The photonic crystal photosemiconductor that is otherwise known as, is by the material with differing dielectric constant, in space periodicity, arranges and the artificial microstructure that forms.Photonic crystal possesses forbidden photon band, has and controls the characteristic that light is propagated within it, is the potential application material of realizing the integrated and all-optical network of following extensive photoelectricity.While introducing defect in complete photon crystal material, can in forbidden photon band, introduce defect state.For example, introducing point defect can be by light local in defect, thereby forms photonic crystal resonant cavity; And if inlead defect can be limited to light in line defect and propagate, form photon crystal wave-guide.In recent years, photoelectric functional device based on photon crystal material has obtained paying close attention to widely, the forbidden photon band and the photon Local Characteristic that utilize photonic crystal, the photonic crystal photoelectric devices such as photonic crystal wavelength division multiplexer, coupling mechanism, wave filter have become the study hotspot direction in this field.
In optical waveguide light path, between two adjacent photon crystal wave-guides, may produce coupling, thereby couple light in adjacent waveguide.The coupling length that we are coupled to process another waveguide process by light completely from a waveguide is called coupling period, the electromagnetic coupling period of different frequency is different, and this just realizes the light splitting of different frequency electromagnetic wave application foundation is provided for utilizing to be coupled between photon crystal wave-guide.
Guide directional coupler is the waveguide light-splitting device based on above-mentioned principle, be widely used in the optical device systems such as photoswitch, wavelength-division multiplex and beam splitter, in fields such as light signal processing, optical communication, integrated optical circuit and photon calculating, have important application.And traditional photonic crystal directional coupler is because coupling period is long, therefore volume is large, integrated level is low.For example, the directional coupler based on traditional optical waveguide needs the even more length of hundreds of lattice period could realize the electromagnetic efficient light splitting of different frequency conventionally.
Summary of the invention
The technical problem to be solved in the present invention is to propose a kind ofly in small scale more, to realize the photonic crystal directional couple device of two bundle different frequency electromagnetic wave high-level efficiency light splitting.
For achieving the above object, the technical solution used in the present invention is: a kind of photonic crystal directional coupler, it comprises substrate and is vertically set on the some medium posts on this substrate, these some medium posts cross two separate main waveguide wire defects (9) and coupled waveguide line defect (10), between between main waveguide wire defect (9) and coupled waveguide line defect (10), be separated with at least one row's medium post, this row's medium post is racetrack medium post (7), and all the other medium posts are column type medium post (2); The medium columnar region that is positioned at this row's medium post one side is main waveguide part (8), the medium columnar region that is positioned at the relative side of this row's medium post is right-angled bend coupled waveguide part (5), and main waveguide part (8), right-angled bend coupled waveguide part (5) and this row's racetrack medium post 7 between them form the agent structure of photonic crystal directional coupler; Main waveguide part (8) is W1 type photonic crystal straight wave guide, and right-angled bend coupled waveguide part (5) is W1 type right-angled bend waveguide; Column type medium post (2) is highly h 1, radius is r, the height of this racetrack medium post (7) is h 1, the tensile elongation of moving towards in direction perpendicular to main waveguide part (8) on the xsect of this racetrack medium post (7) is t, the runway radius of this racetrack medium post (7) is r 1, wherein t is greater than zero, and r1 is greater than or less than r.
Further improvement as such scheme, this substrate comprises silicon dioxide buried regions (3) and layer-of-substrate silicon (4), column type medium post (2) arranges this silicon dioxide buried regions (3) above with racetrack medium post (7), and silicon dioxide buried regions (3) is positioned in layer-of-substrate silicon (4).
As the further improvement of such scheme, the thickness of silicon dioxide buried regions (3) is 3 μ m, and the height of racetrack medium post (7) is 220nm, and the thickness of layer-of-substrate silicon (4) is 600 μ m.
Further improvement as such scheme, coupled waveguide line defect (10) comprises horizontal component and the vertical component vertical with this horizontal component, main waveguide wire defect (9) is " one " font and is parallel to this horizontal component, this row's medium post of main waveguide wire defect (9) and horizontal component interval, between between main waveguide wire defect (9) and horizontal component, be separated with row's medium post, this row's medium post is parallel to the horizontal component of main waveguide wire defect (9) and coupled waveguide line defect (10), and the length of this row's medium post is identical with the length of this horizontal component.
As the further improvement of such scheme, these some medium posts are array and arrange.
Compare with traditional photonic crystal directional coupler, the present invention adopts racetrack medium post as the interval region of main waveguide part and right-angled bend coupled waveguide part, greatly shortened the coupling period of electromagnetic wave in directional coupler, thereby reach the object of reduction of device volume, have that volume is little, compact conformation, efficiency are high, integrated level advantages of higher, meanwhile, coupling period reduce also for make waveguide-coupled device and the wavelength division multiplex device that channel spacing is less on fixed volume, provide effective way.
Accompanying drawing explanation
Fig. 1 be coupling period with the change curve of spacer region racetrack medium post (7) tensile elongation t, as seen along with the increase of tensile elongation t, the coupling period of device is and reduces trend, wherein a is the lattice period that medium post is arranged.
Fig. 2 is the three-dimensional intention of photonic crystal directional coupler agent structure of the present invention.
Fig. 3 is photonic crystal directional coupler agent structure side view of the present invention.
Fig. 4 is photonic crystal directional coupler agent structure vertical view of the present invention.
Fig. 5 is the structural representation of main waveguide and right-angled bend coupled waveguide spacer region racetrack medium post.
Fig. 6 is the vertical view of main waveguide and right-angled bend coupled waveguide spacer region racetrack medium post.
Fig. 7 is the required reticle schematic diagram of etching scribe line.
Fig. 8 a-8f is the required scribe line process flow diagram of preparation scribing.
Fig. 9 a-9f is the process flow diagram of preparation SOI top silicon layer post.
Figure 10 a-10f is the process flow diagram to the high racetrack medium post of requirement on machining accuracy.
Figure 11 a-11e is the process flow diagram in removal devices structural edge region.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
The structural representation of the photonic crystal directional coupler providing for better embodiment of the present invention as shown in Figure 1, 2, 3.Photonic crystal directional coupler comprises substrate and is vertically set on the some medium posts on this substrate, these some medium posts cross two separate main waveguide wire defects 9 and coupled waveguide line defect 10, between between main waveguide wire defect 9 and coupled waveguide line defect 10, be separated with row's medium post, this row's medium post is racetrack medium post 7, and all the other medium posts are column type medium post 2.
This substrate comprises silicon dioxide buried regions 3 and layer-of-substrate silicon 4, and column type medium post 2 arranges on this silicon dioxide buried regions 3 with racetrack medium post 7, and silicon dioxide buried regions 3 is positioned in layer-of-substrate silicon 4.In Fig. 2, h 1=220nm is silicon post height (being the height of column type medium post 2), h 2=3 μ m are the thickness of silicon dioxide buried regions, h 3=600 μ m are the thickness of bottom silicon, and 2 cycles of column type medium post of arranging in agent structure are a=600nm, radius r=0.2a.
The medium columnar region that is positioned at this row's medium post one side is main waveguide part 8, the medium columnar region that is positioned at the relative side of this row's medium post is right-angled bend coupled waveguide part 5, and main waveguide part 8, right-angled bend coupled waveguide part 5 and this row's racetrack medium post 7 between them form the agent structure of photonic crystal directional coupler.Main waveguide part 8 is W1 type photonic crystal straight wave guide, and right-angled bend coupled waveguide part 5 is W1 type right-angled bend waveguide.
As shown in Figure 1, column type medium post 2 is highly h 1, radius is r, the height of this racetrack medium post 7 is h 1, the tensile elongation of moving towards in direction perpendicular to main waveguide part 8 on the xsect of this racetrack medium post 7 is t, the runway radius of this racetrack medium post 7 is r 1, wherein t is greater than zero, and r1 is greater than or less than r.
As shown in Figure 3, in the present embodiment, coupled waveguide line defect 10 comprises horizontal component and the vertical component vertical with this horizontal component, main waveguide wire defect 9 is " one " font and is parallel to this horizontal component, this row's medium post of coupled waveguide line defect 10 and horizontal component interval, this row's medium post is parallel to the horizontal component of main waveguide wire defect 9 and coupled waveguide line defect 10, and the length of this row's medium post is identical with the length of this horizontal component.
The characteristic frequency of photonic crystal directional coupler is f 1and f 2electromagnetic wave from main waveguide part 8 incidents, through i.e. these row's racetrack medium post 7 regions of spacer region 6() be coupled in right-angled bend coupled waveguide part 5, when electromagnetic wave is coupled into after right-angled bend coupled waveguide part 5 completely, can start again to main waveguide part 8 reverse coupled, because the electromagnetic wave of the different frequency coupling period in photonic crystal is different, so can control the distribution of different frequency electromagnetic wave in main waveguide and coupled waveguide by controlling the length of the spacer region 6 between main waveguide part 8 and right-angled bend coupled waveguide part 5.Rational choice electromagnetic wave length, can be so that characteristic frequency be f 1and f 2electromagnetic wave respectively from main waveguide and the outgoing of right-angled bend coupled waveguide.Complete the electromagnetic light splitting of different frequency.
For the photonic crystal directional coupler that is applied to the integrated and following large-scale integrated light path of photoelectricity, require device to there is less volume and higher integrated level, and the coupling period of electromagnetic wave between two waveguides is conventionally larger, be difficult to reduced volume, structure is also compact not.Therefore as shown in Figure 4,5, the racetrack medium post 7 of spacer region 6 is stretched along the direction perpendicular to photon crystal wave-guide trend, obtain this row's racetrack medium post 7, racetrack medium post 7 can the coupling period between waveguide significantly shorten electromagnetic wave.By tensile elongation t and the medium column radius r of choose reasonable racetrack medium post 7 1, can design and produce the photonic crystal directional coupler that volume is less, integrated level is higher.In addition, because the electromagnetic wave coupling period of side frequency is more close, wanting so to design and produce the directional coupler that channel spacing is less just needs very large volume.Introduce after racetrack medium post 7, electromagnetic wave coupling period significantly shortens, and waveguide-coupled device and the wavelength division multiplex device less for channel spacing provide design basis.
Figure 6 shows that wavelength be 1490nm and the electromagnetic coupling period of 1550nm with the change curve of spacer region racetrack medium post 7 tensile elongation t, visible, along with the increase of tensile elongation t, the coupling period of two kinds of wavelengths of electromagnetic is shortening trend.Work as t=0.1a, r 1=0.2a, and coupling length can realize the efficient light splitting of 1510nm and 1550nm while being 30a, and the total efficiency of two waveguide outgoing electromagnetic wave energies is 94.1%; Work as t=0.15a, r 1=0.3a, and coupling length can realize the efficient light splitting of 1525nm and 1550nm while being 50a, and the total efficiency of two waveguide outgoing electromagnetic wave energies is 95.3%; Work as t=0.3a, r 1=0.2a, and coupling length can realize the efficient light splitting of 1530nm and 1540nm while being 115a, and the total efficiency of two waveguide outgoing electromagnetic wave energies is 91.1%, has realized the efficient light splitting of 10nm channel spacing;
The course of work of photonic crystal directional coupler of the present invention waveguide is: different frequency electromagnetic wave enters system from the main waveguide part 8 of photonic crystal directional coupler, electromagnetic wave is coupling repeatedly between main waveguide part 8 and right-angled bend coupled waveguide part 5, by controlling the coupling length of photonic crystal directional coupler, realize the electromagnetic wave of different frequency from different waveguide outgoing.The present invention also can develop many directional coupler splicings simultaneously, thereby realizes the light splitting of different frequency electromagnetic wave multichannel.
Photonic crystal directional coupler based on racetrack medium post of the present invention is sequentially rearranged by dozens of to hundreds of silicon pole units.Photonic crystal directional coupler comprises substrate base (being substrate), silicon post array (being column type medium post 2), racetrack silicon post array 7, W1 type photon crystal wave-guide (i.e. main waveguide part 8), air-gap (i.e. main waveguide wire defect 9 and coupled waveguide line defect 10).Silicon chip substrate (substrate base) is soi structure, and substrate base consists of top silicon layer, below low-index layer (being silicon dioxide buried regions 3) and substrate silicon layer 4.Wherein, etch silicon post array (being column type medium post 2, racetrack medium post 7) height can be identical with top silicon layer thickness, in the present embodiment, etch silicon post array height is identical with top silicon layer thickness, therefore etching structure (silicon rod structure) on the silicon layer of top, and etching height is identical with top silicon layer height, top silicon layer is etched totally so, only remain silicon rod structure, therefore the silicon chip substrate shown in Fig. 1,2,3 comprises double-layer structure: silicon dioxide buried regions 3 and substrate silicon layer 4.
Therefore silicon post array contacts with the low-index layer of substrate base; Photonic crystal directional coupler is comprised of main waveguide part 8 and right-angled bend coupled waveguide part 5, wherein main waveguide part 8 is W1 type photon crystal wave-guide, right-angled bend coupled waveguide part 5 is W1 type right-angled bend waveguide, between main waveguide part 8 and right-angled bend coupled waveguide part 5, by a row or number, arranges racetrack silicon post 7 intervals.
The principle of directional coupler is based on electromagnetic coupling effect between two adjacent waveguides, couples light in adjacent waveguide.The electromagnetic coupling period of different frequency is different, and this just provides possible for utilizing between waveguide coupling to realize the electromagnetic light splitting of different frequency.The coupling period of traditional qualitative coupling mechanism of photonic crystal is longer, and this volume that has just determined whole device is larger, and structure is compact not, and integrated level is low, is unfavorable for its application in integrated at all-optical network and extensive full light.The present invention adopts racetrack medium post as the interval region of main waveguide part 8 and right-angled bend coupled waveguide part 5.The coupling period of electromagnetic wave in directional coupler shortened in the introducing of racetrack medium post 7 greatly, thereby reaches the object of reduction of device volume.Meanwhile, due to coupling period reduce also for make waveguide-coupled device and the wavelength division multiplex device that channel spacing is less on fixed volume, provide effective way.
When the electromagnetic wave of different frequency is during from main waveguide part 8 incident of photonic crystal directional coupler, owing to there is evanescent wave coupling, electromagnetic wave can be coupled in right-angled bend coupled waveguide part 5.Meanwhile, the electromagnetic wave being coupled in right-angled bend coupled waveguide part 5 also can be to main waveguide part 8 couplings, so iterative cycles.By the electromagnetic wave of characteristic frequency from a waveguide be coupled to completely another waveguide the coupling length of process be defined as the electromagnetic coupling period of this frequency.Different electromagnetic wave coupling periods is different, and is directly proportional to its wave frequency.By controlling the coupling length of photonic crystal directional coupler, when the electromagnetic wave of a frequency is present in main waveguide part 8 completely, and another frequency electromagnetic wave is while being present in right-angled bend coupled waveguide part 5 completely, change coupled waveguide trend and make it separated with main waveguide, can realize the object of different frequency electromagnetic wave light splitting.In the spacer region 6 of main waveguide part 8 and right-angled bend coupled waveguide part 5, the structural parameters of racetrack medium post 7 on the coupled characteristic impact of coupled apparatus greatly.It is stretched and obtain racetrack medium rod structure along the direction perpendicular to waveguide trend, can be by regulating racetrack medium post 7 tensile elongation t and radius r 1control electromagnetic wave coupling period therein.Thereby reach reduced volume, realize and on fixed volume, to make waveguide-coupled device that channel spacing is less and the object of wavelength division multiplex device.
Fig. 7 is the required reticle schematic diagram of etching scribe line.Reticle is that the length of side is the square structure of A=1cm, and square structure is divided into 16 square junior units, and each unit is elongated is a=0.25cm.Designed 2 D photon crystal directional coupler is made in junior unit, through scribing single exposure, can obtain 16 groups of 2 D photon crystal directional couplers.
Concrete manufacturing process of the present invention is as follows:
The first step, the required scribe line of preparation scribing, as shown in Fig. 8 a-8f;
(A) to the thick 220nm of top silicon, the thick 3 μ m of silicon dioxide buried regions, cleaning is carried out in the SOI substrate (as shown in Figure 8 a) that substrate silicon 600 μ m are thick;
(B) in SOI substrate, make the photoresist film 104 that a layer thickness is 2-3 μ m;
(C) substrate 104 that applies photoresist film is put into baking oven front baking;
(D) photoresist film 104 preparing is carried out to electron beam exposure, obtain scribe line figure, as shown in Figure 8 c;
(E), as shown in Fig. 8 d, through technological processes such as development, post bakes, make photoresist mask arrangement;
(F) as shown in Fig. 8 e, the photoresist mask arrangement that applying step (E) is made carries out inductively coupled plasma etching (Inductively Coupled Plasma etching, ICP), make photonic crystal directional coupler agent structure, etching depth is 4 μ m.Remove photoresist film 104, obtain scribing sheet groove structures, as shown in Fig. 8 f;
Second step, the required photoresist mask of preparation ICP etching, as shown in Figure 9;
(G), as shown in Fig. 9 a-9b, in the SOI substrate with scribing sheet groove structures preparing in step (F), prepare the photoresist film 201 that a layer thickness is 100nm;
(H) structure of having been prepared by step (G) is carried out front baking;
(I), as shown in Fig. 9 c, the photoresist film 201 preparing is carried out to electron beam exposure;
(J), as shown in Fig. 8 d, through development, post bake, obtain silicon pillar array structure;
The 3rd step, utilizes ICP photoresist mask structure prepared by second step to carry out ICP etching, makes photonic crystal directional coupler agent structure of the present invention;
(K) as shown in Fig. 9 e, the ICP photoresist mask structure that step (J) is made carries out ICP etching, and etching depth is 220nm, obtains silicon post array;
(L), as shown in Fig. 9 f, remove photoresist film on the resulting silicon pillar array structure of step (K), and clean;
The 4th step, the racetrack medium post strict to dimensional requirement carries out meticulous finishing, as shown in figure 10;
(M), as shown in Figure 10 a, 10b, in the resulting structure of step (L), apply photoresist film 301 as protective seam;
(N) as shown in Figure 10 c, 10d, the photoresist film 301 preparing is carried out to the techniques such as optical exposure, development, obtain photoresist mask structure, will need silicon post (spacer region racetrack silicon post (the 7)) region of high precision finishing to come out;
(O) as shown in Figure 10 e, 10f, utilize focused-ion-beam lithography technique to make it reach required size to needing the silicon post of high precision finishing to carry out etching, remove photoresist;
The 5th step, the fringe region of removal devices structure;
(P), as shown in Figure 11,11b, on the resulting device architecture of step (O) surface, apply PMMA(polymethylmethacrylate) layer 401;
(Q) as shown in Figure 11 c, 11d, PMMA layer 401 is carried out to synchrotron radiation X-ray exposure, development, on device architecture, make a protective seam;
(R), according to scribe line scribing, can obtain 16 photonic crystal directional coupler agent structures that formed by silicon post array;
(S) as shown in Figure 11 e, the photonic crystal directional coupling structure based on racetrack medium post that step (R) is obtained is put into wafer lapping machine, use as requested different lapping liquids or polishing fluid to carry out side grinding and polishing, remove marginarium and make device architecture flat side down;
Because PMMA Refractive Index of Material is less than the refractive index of silicon, meet two-dimensional flat plate photon crystal device in the total internal reflection condition perpendicular on device direction, therefore retain PMMA as the protection structure of device, increase the firmness of device, make it not fragile.
The invention is not restricted to above-mentioned embodiment, described device main body can be also 2-D air pore structure, and spacer region photonic crystal elements can be also racetrack airport structure; And main waveguide and right-angled bend coupled waveguide can be the Two-Dimensional Photonic Crystal Waveguides such as W2 type, W3 type.Therefore, every any simple deformation of making on the claims in the present invention 1 technical scheme basis all the invention is intended to the row of protection domain.

Claims (6)

1. a photonic crystal directional coupler, it comprises substrate and is vertically set on the some medium posts on this substrate, these some medium posts cross two separate main waveguide wire defects (9) and coupled waveguide line defect (10), between between main waveguide wire defect (9) and coupled waveguide line defect (10), be separated with at least one row's medium post, it is characterized in that, this row's medium post is racetrack medium post (7), and all the other medium posts are column type medium post (2); The medium columnar region that is positioned at this row's medium post one side is main waveguide part (8), the medium columnar region that is positioned at the relative side of this row's medium post is right-angled bend coupled waveguide part (5), and main waveguide part (8), right-angled bend coupled waveguide part (5) and this row's racetrack medium post (7) between them form the agent structure of photonic crystal directional coupler; Main waveguide part (8) is W1 type photonic crystal straight wave guide, and right-angled bend coupled waveguide part (5) is W1 type right-angled bend waveguide; Column type medium post (2) is highly h 1, radius is r, the height of this racetrack medium post (7) is h 1, the tensile elongation of moving towards in direction perpendicular to main waveguide part (8) on the xsect of this racetrack medium post (7) is t, the runway radius of this racetrack medium post (7) is r 1, wherein t is greater than zero, and r1 is greater than or less than r.
2. photonic crystal directional coupler as claimed in claim 1, it is characterized in that: this substrate comprises silicon dioxide buried regions (3) and layer-of-substrate silicon (4), column type medium post (2) arranges this silicon dioxide buried regions (3) above with racetrack medium post (7), and silicon dioxide buried regions (3) is positioned in layer-of-substrate silicon (4).
3. photonic crystal directional coupler as claimed in claim 2, it is characterized in that: this substrate comprises top silicon layer, silicon dioxide buried regions and substrate silicon layer, column type medium post and racetrack medium cylindricality are formed on this top silicon layer and are structure as a whole with this top silicon layer, this top silicon layer is positioned on silicon dioxide buried regions, and silicon dioxide buried regions is positioned in layer-of-substrate silicon.
4. photonic crystal directional coupler as claimed in claim 2, is characterized in that: the thickness of silicon dioxide buried regions (3) is 3 μ m, and the height of racetrack medium post (7) is 220nm, and the thickness of layer-of-substrate silicon (4) is 600 μ m.
5. photonic crystal directional coupler as claimed in claim 1, it is characterized in that: coupled waveguide line defect (10) comprises horizontal component and the vertical component vertical with this horizontal component, main waveguide wire defect (9) is " one " font and is parallel to this horizontal component, this row's medium post of main waveguide wire defect (9) and horizontal component interval, between between main waveguide wire defect (9) and horizontal component, be separated with row's medium post, this row's medium post is parallel to the horizontal component of main waveguide wire defect (9) and coupled waveguide line defect (10), the length of this row's medium post is identical with the length of this horizontal component.
6. photonic crystal directional coupler as claimed in claim 1, is characterized in that: these some medium posts are array and arrange.
CN201210556764.XA 2012-12-20 2012-12-20 Directional coupler for photonic crystals Active CN103018826B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210556764.XA CN103018826B (en) 2012-12-20 2012-12-20 Directional coupler for photonic crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210556764.XA CN103018826B (en) 2012-12-20 2012-12-20 Directional coupler for photonic crystals

Publications (2)

Publication Number Publication Date
CN103018826A CN103018826A (en) 2013-04-03
CN103018826B true CN103018826B (en) 2014-08-20

Family

ID=47967636

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210556764.XA Active CN103018826B (en) 2012-12-20 2012-12-20 Directional coupler for photonic crystals

Country Status (1)

Country Link
CN (1) CN103018826B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103616348B (en) * 2013-12-05 2015-09-30 中国电子科技集团公司第三十八研究所 A kind of photonic crystal three resonator cavity is without thermalization biology sensor
CN104950388B (en) * 2014-09-29 2021-04-13 欧阳征标 Round hole type square lattice photonic crystal low-refractive-index single-compensation scattering column right-angle waveguide
EP3347748B1 (en) * 2015-09-08 2023-05-10 University of Washington Alvarez lens with low contrast metasurfaces
CN108061936B (en) * 2017-12-21 2019-07-12 南开大学 A kind of optical splitter and the light-splitting method using the optical splitter

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101038354A (en) * 2007-04-24 2007-09-19 浙江大学 Ultra-short photon crystal 1XN optical power splitter
CN101162279A (en) * 2006-10-13 2008-04-16 中国科学院半导体研究所 Single-mode photon crystal polarization beam splitter
CN101251627A (en) * 2008-03-28 2008-08-27 中国科学院上海技术物理研究所 Photon crystal wave-guide polarization beam splitter
JP2009042682A (en) * 2007-08-10 2009-02-26 Nagaoka Univ Of Technology Photonic wavelength filter
CN203191576U (en) * 2012-12-20 2013-09-11 中国电子科技集团公司第三十八研究所 A photonic crystal directional coupler

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101162279A (en) * 2006-10-13 2008-04-16 中国科学院半导体研究所 Single-mode photon crystal polarization beam splitter
CN101038354A (en) * 2007-04-24 2007-09-19 浙江大学 Ultra-short photon crystal 1XN optical power splitter
JP2009042682A (en) * 2007-08-10 2009-02-26 Nagaoka Univ Of Technology Photonic wavelength filter
CN101251627A (en) * 2008-03-28 2008-08-27 中国科学院上海技术物理研究所 Photon crystal wave-guide polarization beam splitter
CN203191576U (en) * 2012-12-20 2013-09-11 中国电子科技集团公司第三十八研究所 A photonic crystal directional coupler

Also Published As

Publication number Publication date
CN103018826A (en) 2013-04-03

Similar Documents

Publication Publication Date Title
KR101893048B1 (en) Apparatus and method for waveguide polarizer comprizing series of bends
KR100578683B1 (en) Optical devices and methods of fabrication thereof
CN103018826B (en) Directional coupler for photonic crystals
CN105607186B (en) Based on SiO2Load the manufacturing method of the waveguide bragg grating of slab waveguide
Djogo et al. Femtosecond laser additive and subtractive micro-processing: enabling a high-channel-density silica interposer for multicore fibre to silicon-photonic packaging
US20110150386A1 (en) Photonic integrated circuit having a waveguide-grating coupler
WO2007074876A1 (en) Coupling structure of waveguide
CN103885118B (en) Two dimension is without V-groove fiber array device and preparation method thereof
JP4705067B2 (en) 3D crossed waveguide
CN1621893A (en) Multi-channel Mach-Zehnder interferometer type optical circuits for restraining heat interference of adjacent channel
CN102819066A (en) Three-dimensional (3D) converter for coupling multi-core optical fiber and planar optical waveguides and manufacturing method thereof
CN203191576U (en) A photonic crystal directional coupler
CN103033879B (en) Method of manufacturing directional coupler of photonic crystal
US20240045140A1 (en) Waveguide structures
CN102520521B (en) Three-stage two-dimensional photonic crystal beam compression device and manufacturing method thereof
CN102565935B (en) Resonant-coupling two-way transmission photon crystal waveguide and manufacturing method thereof
JPH1048443A (en) Polymer waveguide and its production
CN102419479B (en) Two-stage beam shrinkage system based on photonic crystal resonant cavity
CN102419480B (en) Two-stage beam shrinkage system based on photonic crystal resonant cavity and manufacturing method for two-stage beam shrinkage system
CN102590949B (en) Side-coupled dual-channel optical waveguide transmission system for photonic crystal
CN102565936A (en) Side surface coupling unidirectional transmission photonic crystal waveguide device and manufacturing method thereof
EP1182472B1 (en) Optical element and method of fabrication thereof
CN102520522B (en) Multi-stage two-dimensional photonic crystal beam compression device
WO2021209139A1 (en) Photonic chip with edge coupler and method of manufacture
Kufner et al. Ion exchange technology for optical waveguides: Single‐and multimode planar lightwave circuits fabricated by ion exchange in glass

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20201215

Address after: No.28-2, Xiyuan 1st Road, Shapingba District, Chongqing

Patentee after: UNITED MICROELECTRONICS CENTER Co.,Ltd.

Address before: 230031, 199 camphor Road, hi tech Development Zone, Anhui, Hefei

Patentee before: 38th Research Institute, China Electronics Technology Group Corp.

Patentee before: ACADEMY OF PUBLIC SECURITY TECHNOLOGY, HEFEI

TR01 Transfer of patent right