CN103014857A - Star sapphire wafer and preparation method thereof - Google Patents
Star sapphire wafer and preparation method thereof Download PDFInfo
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- CN103014857A CN103014857A CN2013100085240A CN201310008524A CN103014857A CN 103014857 A CN103014857 A CN 103014857A CN 2013100085240 A CN2013100085240 A CN 2013100085240A CN 201310008524 A CN201310008524 A CN 201310008524A CN 103014857 A CN103014857 A CN 103014857A
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Abstract
The invention discloses a star sapphire wafer and a preparation method of the star sapphire wafer. Second phase sediment is formed as a star on a surface of a mode guiding method titanium-doped sapphire wafer after the mode guiding method titanium-doped sapphire wafer is thermally treated, so that needle-shaped sediment can be found under an optical microscope. The preparation method comprises the following steps of: firstly, using the mode guiding method to grow and obtain the titanium-doped sapphire wafer, subsequently treating the wafer by using a series of aerobic thermal treatment methods to obtain the star sapphire wafer in the following sub steps of firstly aerobically annealing at a high temperature and uniformly oxidizing titanium ions to tetravalent colorless titanium ions, then cooling to a low temperature near at 1000 DEG C, insulating and nucleating the sediment phase in the wafer, subsequently heating to a sediment phase development temperature, insulating and forming as a star to prepare the star sapphire wafer. The star sapphire wafer disclosed by the invention is even and transparent, so that the flashing needle-shaped sediment can be founded under the optical microscope; and the wafer has the advantages of higher surface breaking tenacity and stable mechanical property.
Description
Technical field
The invention belongs to transparent optical crystalline material field, particularly relate to a kind of sapphire wafer and preparation method thereof.
Background technology
Sapphire crystal has excellent comprehensive physical and chemical performance, such as the hardness of superelevation and extremely low frictional coefficient, nature only is only second to diamond, wide band (the spectrum through performance of 300～5000nm) excellences, and possess high temperature resistant, corrosion resistance nature feature, so that sapphire wafer becomes the first-selection of modern high performance window material.Yet sapphire wafer is when using as window material, and under extraneous impact force action, brittle cracking or the fragility phenomenon of bursting apart easily occurs wafer, causes the wafer mechanical stability greatly to descend.This be sapphire wafer as a large bottleneck of window material commercial applications, limited its development and in the application in wider field.Therefore, research and develop out the higher window of a kind of toughness and become the problem that this area needs to be resolved hurrily with sapphire wafer.
We know, the essential attribute of material plasticity deformation is the slip mechanism of dislocation, and metallic substance generally has very excellent plastic property, this is because the crystalline network symmetry of metal ion crystal is high, possess a large amount of dislocation glide systems, and the resistance of dislocation glide is little, i.e. the potential barrier lower (0.1ev rank) of dislocation startup, so under extraneous mechanical effect, the metal Dislocations is easy to slippage occurs and plastic deformation occurs.And different greatly for sapphire crystal, at first it is typical covalent linkage crystal, has obvious directivity, and the jack per line ion repulsion that meets is very big, dislocation glide potential barrier very high (1ev rank).And sapphire crystal belongs to corundum type structure, trigonal system R-3C assymetric crystal complex structure, its crystals is sliding system seldom, under the normal temperature mechanical effect, sapphire crystal occur brittle cracking or fragility burst apart before dislocation all can't start, therefore sapphire crystal is a kind of hard brittle material at normal temperatures.For this brittle crystal material, the toughness approach that improves it mainly is first: be used for reaching formation layer of surface stress by surface modification, must overcome first this lamination stress before the crystal generation brittle rupture, thereby reach the purpose of malleableize; Second: by generate a kind of mechanism that can absorb energy-to-break in crystal, this mechanism had the effect of mechanical energy that absorbing crystal bears before crystal generation brittle rupture, and reached the purpose of malleableize.
Based on this brittle crystal material of malleableize sapphire, researcher proposed multiple solution: such as US Patent No. 5702654, its technology point is: the MgO powder is covered on the sapphire wafer, is heated to certain temperature (1750 ℃ of ≈) and keeps certain hour, make Mg
2+Produce diffusion in wafer surface; Make surperficial Mg after using afterwards the second temperature (2000 ℃ of ≈) insulation certain hour instead
2+Uniform Dispersion; Then crystal is annealed to rapidly the third temperature (1450 ℃ of ≈) and anneals or timeliness, reaches the malleableize sapphire crystal so that separate out the second-phase (magnesium-aluminium spinel) that absorbs energy-to-break.But but find Mg in this method through experimental demonstration repeatedly
2+Easily volatilization occuring and loses the effect of malleableize in about 2000 ℃ of hot environments.And the method for US Patent No. 6222194B1 is: employing neutron irradiation approach reaches the effect of surface modification, so that wafer surface forms the toughness that one deck stress improves wafer.When sapphire wafer through 1 * 10
18Neutrons/cm
2Fast neutron irradiated after, the surface toughness of wafer is significantly improved.But the cost that the method is high and equipment can't satisfy the large-size sapphire radiation parameter, are difficult to carry out the industry application of mass-producing.In sum, still there is obvious technical deficiency in the mechanical toughness that improves sapphire wafer, is difficult to reach the required requirement of industrial production.
Summary of the invention
The object of the present invention is to provide a kind of star sapphire wafer and preparation method thereof, surface toughness is higher to obtain, the sapphire wafer of good optical property, to satisfy it as the application demand of window material.
To achieve these goals, the technical solution used in the present invention is as follows:
A kind of star sapphire wafer is characterized in that, is 99.999% Al by purity
2O
3Spectroscopically pure TiO with 1000～5000ppm content
2Sinter crystal into, this crystal is grown to the titanium-doped sapphire wafer by the guided mode method, after Overheating Treatment, dissolves the second-phase throw out at titanium-doped sapphire wafer surface star.
Described throw out is the needle-lees thing.
Described needle-lees thing is of a size of: long 65 μ m-100 μ m, wide 0.8 μ m-1.2 μ m.
The star sapphire wafer is characterized in, this star sapphire wafer is a kind of guided mode method titanium-doped sapphire wafer through after a series of thermal treatments, dissolves the sedimentary crystal of second-phase at its surperficial star.This wafer homogeneous transparent can be found the needle-lees thing under opticmicroscope, its surface fracture toughness surpasses 3.0Mpam under the normal temperature
1/2, and the visible-near-infrared spectrum transmitance reaches 80%.
A kind of preparation method of star sapphire wafer is characterized in that, comprises the following steps: that raw material employing purity is 99.999% Al
2O
3Spectroscopically pure TiO with 1000～5000ppm content
2, sinter the crystal raw material piece after mixing into, in the crucible of then packing into, adopt guided mode method growth titanium-doped sapphire wafer;
The titanium-doped sapphire wafer dissolves the needle-lees thing through the star processing at its surperficial star.
1. the step of guided mode method growth titanium-doped sapphire wafer is:
Raw material employing purity is 99.999% Al
2O
3Spectroscopically pure TiO with 1000～5000ppm content
2, fully mix afterwards briquetting on hydropress, reburn and form the crystal raw material piece, in the crucible of then packing into, adopt guided mode law technology growth titanium-doped sapphire wafer.
The step of described guided mode law technology growth titanium-doped sapphire sheet is: the raw material block that sinters is packed in the molybdenum crucible processed with guided mode mould, molybdenum crucible processed and seed crystal is packed in the guided mode stove, after the sealing with guided mode stove evacuation to 1 * 10
-3Pa～1 * 10
-4Pa, radio-frequency induction coil is heating and continuous when being warming up to 2150 ℃, 1～5 hour material of constant temperature, and so that admixture in melt, evenly distribute.Then near 2050 ℃, oriented seed is slowly sowed, make it to contact with the melt liquid level at guided mode mould top, treat that melt launches at mould top uniform spreading, start the shift mechanism growing crystal after several minutes, growth velocity is controlled to be 1～35mm/h, after the crystal growth finishes, be down to room temperature with 20～40 ℃/h speed and take out wafer, obtain the titanium-doped sapphire wafer that titanium ion is evenly distributed.
Described seed crystal is the sapphire crystal bar of [11-20] direction.
The guided mode mould is the guided mode mould of molybdenum system.
2. the star treatment step of titanium-doped sapphire wafer is:
(1) cuts several pieces 110 * 60 * 5mm
3The guided mode method titanium-doped sapphire wafer of (c face) size, behind the optical polish in 1600～1800 ℃ air furnace high temperature annealing 48～72h so that the titanium ion in the crystal all is oxidized to colourless titanic ion;
(2) after titanium-doped sapphire wafer the high temperature anneal finishes, be cooled to air furnace low temperature insulation 5～16h of 900～1150 ℃, so that precipitated phase homogeneous nucleation in wafer;
(3) after the precipitated phase homogeneous nucleation, again be warming up to temperature insulation 10～48h in 1150～1450 ℃ the air furnace, star changes into the needle-lees phase so that the precipitated phase of nucleation is constantly grown in wafer;
(4) after the star end, slowly be down to room temperature with 20～40 ℃/h speed, take out wafer and prepare the star sapphire wafer.
The beneficial effect that the present invention reaches:
The invention provides a kind of processing method for preparing the star sapphire wafer, the star sapphire wafer of the method preparation adopts guided mode method titanium-doped sapphire wafer after a series of annealing thermal treatment of process, so that dissolve second-phase needle-lees thing at its surperficial star.Under extraneous mechanical effect, this needle-lees thing is before wafer generation brittle rupture or bursting apart, can absorb by mechanism such as Bridging mechanism and tiny crack deflections the effect of the mechanical energy of bearing, thereby improved the surface toughness of star sapphire wafer, reached and improve its anti-mechanical shock stability.Compare with common sapphire wafer, star sapphire wafer of the present invention has higher surface toughness, and the second-phase throw out that dissolves of star can not damage the spectrum through performance of wafer strongly, for sapphire wafer provides wider space as window material.
Therefore, star sapphire wafer of the present invention, homogeneous transparent can be found glittering needle-lees thing under opticmicroscope, this wafer has higher surface fracture toughness and has more stable mechanical property.
Description of drawings
Fig. 1 is shape characteristic photo under the star sapphire wafer star precipitated phase opticmicroscope of the present invention;
Fig. 2 is star sapphire wafer of the present invention and normal blue jewel wafer surface fracture toughness property comparison diagram;
Fig. 3 is star sapphire wafer visible-near-infrared spectrum through performance of the present invention.
Embodiment
The present invention will be further described below in conjunction with embodiment and accompanying drawing, but should not limit protection scope of the present invention with this.
The preparation method of the present embodiment star sapphire wafer comprises the following steps:
1. the growth of guided mode method titanium-doped sapphire wafer
Raw material employing purity is 99.999% Al
2O
3Spectroscopically pure TiO with 3000ppm content
2Fully mix afterwards briquetting on hydropress, reburn and form the crystal raw material piece, adopt guided mode law technology growth titanium-doped sapphire wafer, step is: the raw material block that sinters is packed in the molybdenum crucible processed with guided mode mould, molybdenum crucible processed and seed crystal are packed in the guided mode stove, and described seed crystal is the sapphire crystal bar of [11-20] direction, after the sealing with guided mode stove evacuation to 1 * 10
-3Pa, radio-frequency induction coil is heating and continuous when being warming up to 2150 ℃, 3 hours materials of constant temperature, and so that admixture in melt, evenly distribute.Then near 2050 ℃, oriented seed is slowly sowed, make it to contact with the melt liquid level at the guided mode mould top of molybdenum system, treat that melt launches at mould top uniform spreading, start the shift mechanism growing crystal after several minutes, growth velocity is controlled to be 3～20mm/h, after the crystal growth finishes, be down to room temperature with 30 ℃/h speed and take out wafer, obtain the titanium-doped sapphire wafer that titanium ion is evenly distributed.
2. star processing
The star processing of ti sapphire crystal mainly contains the following step:
(1) cuts several pieces 110 * 60 * 5mm
3The titanium-doped sapphire wafer of the guided mode method of (c face) size growth, behind the optical polish in 1700 ℃ air furnace high temperature annealing 60h so that the titanium ion in the crystal all is oxidized to colourless titanic ion.
(2) after titanium-doped sapphire wafer the high temperature anneal finishes, be cooled to 1000 ℃ air furnace low temperature insulation 8h, so that precipitated phase homogeneous nucleation in wafer.
(3) after the precipitated phase homogeneous nucleation, again be warming up to temperature insulation 30h in 1350 ℃ the air furnace, star changes into the needle-lees phase so that the precipitated phase of nucleation is constantly grown in wafer.
(4) after the star end, slowly be down to room temperature with 30 ℃/h speed, take out wafer.And prepare the star sapphire wafer.
The star sapphire wafer that this embodiment obtains, present the micro emulsion look transparent, without cracking and the macroscopic defects such as wrap.Adopt opticmicroscope to explore means, the star precipitated phase that can find this wafer is the needle-like shape characteristic, and comparatively dense is uniformly distributed in wafer surface, measures and finds that its size is about 80 μ m length, 1 μ m is wide, as shown in Figure 1, be the opticmicroscope shape characteristic of this embodiment wafer precipitated phase.At room temperature tested wafer mechanical toughness and visible-near-infrared spectrum through performance, adopted 2Kg diamond Drawing Process to measure the surface fracture toughness of this wafer, test result can find that the surface fracture toughness of this wafer reaches 3.0Mpam as shown in Figure 2
1/2Above, be better than surface fracture toughness (1.5～2.1 Mpam of common sapphire wafer
1/2), and adopt jasco V-570 UV/VIS/NIR spectrophotometer to test its visible-near-infrared spectrum through performance, result such as Fig. 3, this wafer can reach 80% in the visible-near-infrared spectrum transmitance, shows that the precipitated phase of star does not have strong detrimental effect to its visible-near-infrared spectrum through performance.
The preparation method of the present embodiment and enforcement 1 is basic identical, and difference is that wherein the characteristics of guided mode method titanium-doped sapphire wafer growth are: raw material adopts 99.999% Al
2O
3Spectroscopically pure TiO with 2000ppm content
2, guided mode method growth velocity is controlled to be 4～25mm/h, after the crystal growth finishes, is down to room temperature with 35 ℃/h speed and takes out wafer.And the characteristics of star processing are:
(1) cuts several pieces 110 * 60 * 5mm
3The guided mode method titanium-doped sapphire wafer of (c face) size, behind the optical polish in 1650 ℃ air furnace high temperature annealing 60h so that the titanium ion in the crystal all is oxidized to colourless titanic ion.
(2) after titanium-doped sapphire wafer the high temperature anneal finishes, be cooled to 1050 ℃ air furnace low temperature insulation 12h, so that precipitated phase homogeneous nucleation in wafer.
(3) after the precipitated phase homogeneous nucleation, again be warming up to temperature insulation 35h in 1380 ℃ the air furnace, star changes into the needle-lees phase so that the precipitated phase of nucleation is constantly grown in wafer.
(4) after the star end, slowly be down to room temperature with 35 ℃/h speed, take out wafer.
The star sapphire wafer for preparing in the present embodiment presents the macroscopic defectss such as water white transparency, nothing cracking, wrap.The needle-lees of opticmicroscope lower wafer is compared sparse even distribution, and size is about 100 μ m length, 1 μ m is wide.
The preparation method of the present embodiment and enforcement 1 is basic identical, and difference is that wherein the characteristics of guided mode method titanium-doped sapphire wafer growth are: raw material adopts 99.999% Al
2O
3Spectroscopically pure TiO with 4000ppm content
2, guided mode method growth velocity is controlled to be 2～17mm/h, after the crystal growth finishes, is down to room temperature with 25 ℃/h speed and takes out wafer.And the characteristics of star processing are:
(1) cuts several pieces 110 * 60 * 5mm
3The guided mode method titanium-doped sapphire wafer of (c face) size, behind the optical polish in 1750 ℃ air furnace high temperature annealing 60h so that the titanium ion in the crystal all is oxidized to colourless titanic ion.
(2) after titanium-doped sapphire wafer the high temperature anneal finishes, be cooled to 950 ℃ air furnace low temperature insulation 10h, so that precipitated phase homogeneous nucleation in wafer.
(3) after the precipitated phase homogeneous nucleation, again be warming up to temperature insulation 30h in 1300 ℃ the air furnace, star changes into the needle-lees phase so that the precipitated phase of nucleation is constantly grown in wafer.
(4) after the star end, slowly be down to room temperature with 25 ℃/h speed, take out wafer.
The star sapphire wafer for preparing in the present embodiment presents the macroscopic defectss such as the micro mist lacteous is transparent, nothing cracking, wrap.The mutually intensive even distribution of the needle-lees of opticmicroscope lower wafer, size are about 75 μ m length, 0.9 μ m is wide.
The preparation method of the present embodiment and enforcement 1 is basic identical, and difference is that wherein the characteristics of guided mode method titanium-doped sapphire wafer growth are: raw material adopts 99.999% Al
2O
3Spectroscopically pure TiO with 1000ppm content
2, guided mode method growth velocity is controlled to be 5～35mm/h, after the crystal growth finishes, is down to room temperature with 40 ℃/h speed and takes out wafer.And the characteristics of star processing are:
(1) cuts several pieces 110 * 60 * 5mm
3The guided mode method titanium-doped sapphire wafer of (c face) size, behind the optical polish in 1600 ℃ air furnace high temperature annealing 60h so that the titanium ion in the crystal all is oxidized to colourless titanic ion.
(2) after titanium-doped sapphire wafer the high temperature anneal finishes, be cooled to 1100 ℃ air furnace low temperature insulation 12h, so that precipitated phase homogeneous nucleation in wafer.
(3) after the precipitated phase homogeneous nucleation, again be warming up to temperature insulation 40h in 1400 ℃ the air furnace, star changes into the needle-lees phase so that the precipitated phase of nucleation is constantly grown in wafer.
(4) after the star end, slowly be down to room temperature with 40 ℃/h speed, take out wafer.
The star sapphire wafer for preparing in the present embodiment presents the macroscopic defectss such as water white transparency, nothing cracking, wrap.The mutually sparse even distribution of the needle-lees of opticmicroscope lower wafer, size are about 100 μ m length, 1.2 μ m are wide.
The preparation method of the present embodiment and enforcement 1 is basic identical, and difference is that wherein the characteristics of guided mode method titanium-doped sapphire wafer growth are: raw material adopts 99.999% Al
2O
3Spectroscopically pure TiO with 5000ppm content
2, guided mode method growth velocity is controlled to be 1～15mm/h, after the crystal growth finishes, is down to room temperature with 20 ℃/h speed and takes out wafer.And the characteristics of star processing are:
(1) cuts several pieces 110 * 60 * 5mm
3The guided mode method titanium-doped sapphire wafer of (c face) size, behind the optical polish in 1800 ℃ air furnace high temperature annealing 72h so that the titanium ion in the crystal all is oxidized to colourless titanic ion.
(2) after titanium-doped sapphire wafer the high temperature anneal finishes, be cooled to 900 ℃ air furnace low temperature insulation 10h, so that precipitated phase homogeneous nucleation in wafer.
(3) after the precipitated phase homogeneous nucleation, again be warming up to temperature insulation 30h in 1250 ℃ the air furnace, star changes into the needle-lees phase so that the precipitated phase of nucleation is constantly grown in wafer.
(4) after the star end, slowly be down to room temperature with 20 ℃/h speed, take out wafer.
It is transparent that the star sapphire wafer for preparing in the present embodiment presents the powder lacteous, without macroscopic defectss such as cracking, wraps.The needle-lees of opticmicroscope lower wafer is even dense distribution mutually, and size is about 65 μ m length, 0.8 μ m is wide.
Claims (8)
1. a star sapphire wafer is characterized in that, is 99.999% Al by purity
2O
3Spectroscopically pure TiO with 1000～5000ppm content
2Sinter crystal into, this crystal is grown to the titanium-doped sapphire wafer by the guided mode method, after Overheating Treatment, dissolves the second-phase throw out at titanium-doped sapphire wafer surface star.
2. star sapphire wafer according to claim 2 is characterized in that, described throw out is the needle-lees thing.
3. star sapphire wafer according to claim 2 is characterized in that, described needle-lees thing is of a size of: long 65 μ m-100 μ m, wide 0.8 μ m-1.2 μ m.
4. the preparation method of star sapphire wafer claimed in claim 1 is characterized in that, comprises the following steps: that raw material employing purity is 99.999% Al
2O
3Spectroscopically pure TiO with 1000～5000ppm content
2, sinter the crystal raw material piece after mixing into, in the crucible of then packing into, adopt guided mode method growth titanium-doped sapphire wafer;
The titanium-doped sapphire wafer dissolves the needle-lees thing through the star processing at its surperficial star.
5. the preparation method of star sapphire wafer according to claim 4 is characterized in that, the step of described guided mode method growth titanium-doped sapphire wafer is:
The raw material block that sinters is packed in the molybdenum crucible processed with guided mode mould, molybdenum crucible processed and seed crystal is packed in the guided mode stove, after the sealing with guided mode stove evacuation to 1 * 10
-3Pa～1 * 10
-4Pa, radio-frequency induction coil is heating and continuous when being warming up to 2150 ℃, 1～5 hour material of constant temperature, and so that admixture in melt, evenly distribute; Then oriented seed is slowly sowed, make it to contact with the melt liquid level at guided mode mould top, treat that melt launches at mould top uniform spreading, behind a setting-up time, start the shift mechanism growing crystal, growth velocity is controlled to be 1～35mm/h, after the crystal growth finishes, be down to room temperature with 20～40 ℃/h speed and take out wafer, obtain the titanium-doped sapphire wafer that titanium ion is evenly distributed.
6. the preparation method of star sapphire wafer according to claim 5 is characterized in that, described seed crystal is the sapphire crystal bar of [11-20] direction.
7. the preparation method of star sapphire wafer according to claim 4 is characterized in that, the star treatment step of titanium-doped sapphire wafer is:
(1) cuts several pieces 110 * 60 * 5mm
3The titanium-doped sapphire wafer of c face size, behind the optical polish in 1600～1800 ℃ air furnace high temperature annealing 48～72h so that the titanium ion in the crystal all is oxidized to colourless titanic ion;
(2) after the high temperature anneal finishes, in being cooled to 900～1150 ℃ air furnace, be incubated 5～16h, so that precipitated phase homogeneous nucleation in wafer;
(3) after the precipitated phase homogeneous nucleation, be incubated 10～48h in again being warming up to 1150～1450 ℃ air furnace, star changes into the needle-lees phase so that the precipitated phase of nucleation is constantly grown in wafer;
(4) after the star end, be down to room temperature with 20～40 ℃/h speed, prepare the star sapphire wafer.
8. the preparation method of star sapphire wafer according to claim 4 is characterized in that, described needle-lees thing is of a size of: long 65 μ m-100 μ m, wide 0.8 μ m-1.2 μ m.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104451890A (en) * | 2014-11-25 | 2015-03-25 | 蓝思科技（长沙）有限公司 | Sapphire reinforcing method |
| CN105538813A (en) * | 2015-12-09 | 2016-05-04 | 安徽海聚信息科技有限责任公司 | Sapphire screen and production process thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5702654A (en) * | 1996-08-30 | 1997-12-30 | Hughes Electronics | Method of making thermal shock resistant sapphire for IR windows and domes |
-
2013
- 2013-01-10 CN CN2013100085240A patent/CN103014857A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5702654A (en) * | 1996-08-30 | 1997-12-30 | Hughes Electronics | Method of making thermal shock resistant sapphire for IR windows and domes |
Non-Patent Citations (3)
| Title |
|---|
| B. J. YLETKA 等: "Solid Solution Hardening of Sapphire (α-Al2O3)", 《PHYS. STAT. SOL. (A)》 * |
| R. J. BRATTON: "Precipitation and Hardening Behavior of Czochralski Star Sapphire", 《JOURNAL OF APPLIED PHYSICS》 * |
| 吕新强: "导模法生长蓝宝石（Al2O3）晶体的研究", 《中国优秀硕士学位论文全文数据库 工程科技I辑》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104451890A (en) * | 2014-11-25 | 2015-03-25 | 蓝思科技（长沙）有限公司 | Sapphire reinforcing method |
| CN104451890B (en) * | 2014-11-25 | 2017-06-06 | 蓝思科技（长沙）有限公司 | A kind of sapphire intensifying method |
| CN105538813A (en) * | 2015-12-09 | 2016-05-04 | 安徽海聚信息科技有限责任公司 | Sapphire screen and production process thereof |
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Application publication date: 20130403 |