CN103014839B - A kind of P-type dopant and preparation method thereof - Google Patents
A kind of P-type dopant and preparation method thereof Download PDFInfo
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Abstract
A kind of preparation method of P-type dopant, including: A, the phosphorus atoms removed in the underproof n type single crystal silicon sheet containing boron element；B, using remove phosphorus atoms underproof n type single crystal silicon sheet as raw material, casting obtains P-type dopant silicon ingot；C, described P-type dopant silicon ingot is carried out break process, obtain P-type dopant.This P-type dopant resistivity is between 0.001 Ω cm ~ 0.01 Ω cm, including endpoint value.P-type dopant provided by the present invention and preparation method thereof, by removing containing the phosphorus atoms in the underproof n type single crystal silicon sheet of boron element, and the underproof n type single crystal silicon sheet containing boron element removing phosphorus atoms is carried out ingot casting, produce P-type dopant, decrease the waste of resource, reduce production cost.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly, it relates to a kind of P-type dopant and preparation method thereof.
Background technology
Solaode, also referred to as photovoltaic cell, is a kind of semiconductor device that the luminous energy of the sun is converted into electric energy.Owing to it is Green Product, environmental pollution will not be caused, and be Renewable resource, so under current energy starved situation, solaode is a kind of novel energy having broad based growth future.
Polycrystalline silicon for photovoltaic use, quasi-monocrystalline silicon, backing material as solaode, its ingot casting process needs to carry out doping treatment, the polycrystal silicon ingot cast out, mono-like silicon ingot is made to present P type or N-type conductive characteristic, and make resistivity control at 0.5 Ω cm to 6 Ω cm, to reach the technological requirement of solar battery sheet.In casting P-type silicon ingot process, it is common to use former silicon material is adulterated by low-resistance borosilicate foundry alloy as adulterant.For making the P-type silicon ingot resistivity cast out reach technological requirement, the resistivity of this low-resistance borosilicate foundry alloy generally to control at 0.0001 Ω cm to 0.01 Ω cm.The borosilicate foundry alloy of main flow usually mixes boron source in HIGH-PURITY SILICON material in the market, utilizes the mode of crystal pulling to be made, and it is relatively costly, expensive.
Meanwhile, in photovoltaic cell manufacturing process, monocrystal N type cell making process includes: making herbs into wool-phosphorus diffusion-boron diffusion-silicon nitride plated film-printing-sintering-test.Due to complex procedures, in monocrystal N type cell fabrication processes, inevitably produce a large amount of problem sheets, simultaneously as monocrystal N type silicon chip crystal orientation is unified, be [100] crystal orientation, the easy cleavage rupture of silicon chip, it is easy to produce fragment.These generations of defective, cause the waste of resource.
Summary of the invention
In view of this, the present invention provides a kind of P-type dopant and preparation method thereof, makes P-type dopant by the underproof n type single crystal silicon sheet recycled containing boron element, has saved resource, reduced production cost.
For achieving the above object, the present invention provides following technical scheme:
A kind of preparation method of P-type dopant, including:
A, the phosphorus atoms removed in the underproof n type single crystal silicon sheet containing boron element；
B, using remove phosphorus atoms underproof n type single crystal silicon sheet as raw material, casting obtains P-type dopant silicon ingot；
C, described P-type dopant silicon ingot is carried out break process, obtain P-type dopant.
Preferably, described step A includes:
A1, the described underproof n type single crystal silicon sheet containing boron element is immersed in salpeter solution, to remove the phosphorus atoms in described n type single crystal silicon sheet；
A2, described n type single crystal silicon sheet is soaked in a solution of hydrofluoric acid, with in removal step A1 on described n type single crystal silicon sheet surface because of the silicon dioxide layer that nitric acid and pasc reaction generate；
A3, described n type single crystal silicon sheet is immersed in sodium hydroxide solution, so that removal step A1 and step A2 to remain in the acid solution on described n type single crystal silicon sheet surface；
A4, described n type single crystal silicon sheet is immersed in hydrochloric acid solution, so that removal step A3 to remain in the sodium ion on described n type single crystal silicon sheet surface；
A5, by described n type single crystal silicon sheet dry.
Preferably, after each step of step A1-A5 has performed, all also include: described n type single crystal silicon sheet is soaked in pure water, to clean described n type single crystal silicon sheet.
Preferably, salpeter solution described in step A1 is concentration be 65%～68% analytical pure salpeter solution, including endpoint value, soak time is 0.8 hour ~ 1.2 hours, including endpoint value.
Preferably, hydrofluoric acid solution described in step A2 is concentration be 40 ± 5% technical grade hydrofluoric acid solution, including endpoint value, soak time is 0.8 hour ~ 1.2 hours, including endpoint value.
Preferably, sodium hydroxide solution described in step A3 is concentration be 4.5% ~ 5.5% top grade pure cerium hydroxide sodium solution, including endpoint value, soak time is 25 minutes ~ 35 minutes, including endpoint value.
Preferably, hydrochloric acid solution described in step A4 is concentration is the hydrochloric acid solution of 13% ~ 17%, and including endpoint value, soak time is 5 minutes ~ 10 minutes, including endpoint value.
Preferably, described step A includes:
The one side containing phosphorus atoms in described n type single crystal silicon sheet is ground, to remove the phosphorus atoms in described n type single crystal silicon sheet.
Preferably, after described step A, before step B, also include:
The electrical property of described n type single crystal silicon sheet is tested, if conduction type is P type, then carries out step B；If conduction type is N-type, then the resistivity of described n type single crystal silicon sheet is measured, if resistivity is more than 1 Ω cm, then carry out step B, otherwise, return step A.
Preferably, described step B includes:
B1, the underproof n type single crystal silicon sheet removing phosphorus atoms is put into ingot furnace as silicon material, improve the temperature in described ingot furnace, and, to continuing evacuation in described ingot furnace, to remove in described ingot furnace oils and fats within thermal field and silicon material and moisture impurity；
B2, the temperature continued in the described ingot furnace of raising, be completely melt the silicon material in described ingot furnace, obtain silicon liquid；
B3, the temperature reduced in described ingot furnace, make silicon liquid crystallization, until the silicon liquid in described ingot furnace is fully crystallized as silicon ingot, obtains P-type dopant silicon ingot.
Preferably, also include after described step B3:
B4, the temperature continued in the described ingot furnace of reduction, be annealed described silicon ingot, to eliminate P-type dopant silicon ingot internal stress；
B5, the temperature continued in the described ingot furnace of reduction, and improve the air pressure in described ingot furnace, until the temperature in described ingot furnace is down to less than 450 DEG C, the air pressure in described ingot furnace rises to normal pressure, is taken out by the P-type dopant silicon ingot in described ingot furnace.
The P-type dopant that method in more than one any one makes, it is characterised in that described P-type dopant resistivity is between 0.001 Ω cm ~ 0.01 Ω cm, including endpoint value.
Compared with prior art, technical scheme provided by the present invention has the advantage that
P-type dopant provided by the present invention and preparation method thereof, by removing containing the phosphorus atoms in the underproof n type single crystal silicon sheet of boron element, and the underproof n type single crystal silicon sheet containing boron element removing phosphorus atoms is carried out ingot casting, produce P-type dopant, decrease the waste of resource, reduce production cost.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is embodiment of the present invention schematic flow sheet；
Fig. 2 is the embodiment of the present invention one schematic flow sheet.
Detailed description of the invention
As described in background, in photovoltaic cell manufacturing process, p-type polysilicon ingot, mono-like silicon ingot manufacturing process in need to use P-type dopant, and in monocrystal N type cell fabrication processes, it is easy to produce defective.Inventor studies discovery, there is a large amount of boron atom in defective positive electrode surface after boron spreads, negative terminal surface exists a large amount of phosphorus atoms, if got rid of by negative pole phosphorus atoms, retain the boron atom of positive pole, then after boron diffusion, defective silicon chip can cast adulterant silicon ingot as boron source simultaneously.So, by recycling defective boron diffusion silicon chip, p-type polysilicon or the P-type dopant of P type class monocrystalline silicon cast ingot link needs are produced, it is possible to largely reduce solaode cost of manufacture.
Based on this, the invention provides a kind of P-type dopant and preparation method thereof, to economize on resources to greatest extent, reduce cost, idiographic flow is as it is shown in figure 1, include:
Step S1, the phosphorus atoms removed in the underproof n type single crystal silicon sheet containing boron element；
Step S2, using remove phosphorus atoms underproof n type single crystal silicon sheet as raw material, casting obtains P-type dopant silicon ingot；
Step S3, described P-type dopant silicon ingot is carried out break process, obtain P-type dopant.
P-type dopant provided by the invention and preparation method thereof, recycle the underproof n type single crystal silicon sheet containing boron element, by removing containing the phosphorus atoms in the underproof n type single crystal silicon sheet of boron element, and the defective silicon chip removing phosphorus atoms is carried out ingot casting, produce P-type dopant, decrease the waste of resource, reduce production cost.
It is above the core concept of the present invention, understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Elaborate a lot of detail in the following description so that fully understanding the present invention, but the present invention can also adopt other to be different from alternate manner described here to be implemented, those skilled in the art can do similar popularization when without prejudice to intension of the present invention, and therefore the present invention is not by the restriction of following public specific embodiment.
Embodiment one
The preparation method present embodiments providing a kind of P-type dopant, utilize n type single crystal silicon sheet phosphorus, boron diffusion after defective as raw material, first the negative pole P elements of defective of N-type monocrystalline is washed off by the method for Chemical cleaning, retain positive pole boron element, then the silicon chip cleaned up is cast P-type dopant silicon ingot as silicon material, reach to recycle the purpose of defective monocrystalline silicon piece after N-type phosphorus boron spreads, specific as follows:
Step S1, the phosphorus atoms removed in the underproof n type single crystal silicon sheet containing boron element.
Concrete, in the present embodiment, step S1 adopts chemical cleaning method to carry out, and comprises the steps:
Step S101, the described underproof n type single crystal silicon sheet containing boron element is immersed in salpeter solution, to remove the phosphorus atoms in described n type single crystal silicon sheet.
Wherein, the salpeter solution in this step is 65%～68% analytical pure salpeter solution, including endpoint value.To soak under underproof n type single crystal silicon sheet room temperature containing boron element, soak time is 0.8 hour ~ 1.2 hours, including endpoint value, makes the phosphorus atoms in the underproof n type single crystal silicon sheet containing boron element fully react with salpeter solution.
Concrete, the reaction of this step includes: phosphorus atoms and salpeter solution react generation phosphoric acid, nitric oxide gas and nitrogen dioxide gas；Silicon atom generates silicon dioxide and nitrogen dioxide gas with salpeter solution.
Step S102, n type single crystal silicon sheet is soaked in a solution of hydrofluoric acid, with in removal step S101 on n type single crystal silicon sheet surface because of the silicon dioxide layer that nitric acid and pasc reaction generate.
Wherein, hydrofluoric acid solution in this step is the technical grade hydrofluoric acid solution of 40 ± 5%, including endpoint value, by the underproof n type single crystal silicon sheet soak at room temperature containing boron element, soak time is 0.8 hour ~ 1.2 hours, including endpoint value, with the silicon dioxide layer that nitric acid in removal step S101 generates with pasc reaction.
Concrete, the reaction of this step includes: silicon dioxide and Fluohydric acid. react generation silicon tetrafluoride gas and water.
Step S103, n type single crystal silicon sheet is immersed in sodium hydroxide solution, so that removal step S101 and step S102 to remain in the acid solution of silicon chip surface.
Wherein, the sodium hydroxide solution in this step is the top grade pure cerium hydroxide sodium solution of 4.5% ~ 5.5%, including endpoint value, to soak under underproof n type single crystal silicon sheet room temperature containing boron element, soak time is 25 minutes ~ 35 minutes, including endpoint value, to remove the acid solution of silicon chip surface residual.
After acid solution in step S101 and step S102 is soaked for a long time, silicon chip surface is inevitably with a small amount of acid solution residual.Therefore, silicon chip is soaked by this step by the alkali liquor of low concentration, remains reaction for the acid solution with silicon chip surface.
Concrete, the reaction of this step includes: sodium hydroxide generates sodium nitrate and water with nitric acid reaction；Sodium hydroxide and Fluohydric acid. react generation sodium fluoride and water.
Step S104, n type single crystal silicon sheet is immersed in hydrochloric acid solution, so that removal step S103 to remain in the sodium ion of silicon chip surface.
Wherein, the concentration of the hydrochloric acid solution in this step is 13% ~ 17%, including endpoint value, to soak under underproof n type single crystal silicon sheet room temperature containing boron element, soak time is 5 minutes ~ 10 minutes, including endpoint value, to remain in the sodium ion of described silicon chip surface in removal step S103.
Owing to the reaction product in step S103 comprises sodium ion, this step, by using hydrochloric acid solution that silicon chip is carried out soaking and washing, makes the sodium ion in solution generate sodium chloride soluble in water after reacting with hydrochloric acid solution, to remove the sodium ion in solution.
Step S105, the underproof n type single crystal silicon sheet containing boron element is dried.
This step is for drying the liquid of residual on silicon chip.Meanwhile, after step S104, if having residual hydrochloric acid at silicon chip surface, this step can also utilize the characteristic of hydrochloric acid highly volatile, the residual hydrochloric acid of silicon chip surface is removed.
It should be noted that after above each step completes, the silicon chip soaking above-mentioned every kind of solution is all carried out pure water cleaning, to remove the solution of silicon chip surface residual.
Simultaneously, after step S1 completes, phosphorus atoms for ensureing the underproof n type single crystal silicon sheet containing boron element is removed clean, and the present embodiment also includes the electrical property of the underproof n type single crystal silicon sheet containing boron element after completing step S1 is tested, and idiographic flow is as shown in Figure 2.
Concrete, the electrical property of described n type single crystal silicon sheet is tested, if conduction type is P type, then carries out step S2；If conduction type is N-type, then the resistivity of described n type single crystal silicon sheet is measured, if resistivity is more than 1 Ω cm, then carry out step S2, otherwise, return step S1.
Step S2, using remove phosphorus atoms underproof n type single crystal silicon sheet as raw material, casting obtains P-type dopant silicon ingot.
Concrete, the step S2 in the present embodiment comprises the steps:
Step S201, the underproof n type single crystal silicon sheet removing phosphorus atoms is put into ingot furnace as silicon material, improve the temperature in ingot furnace, and, to continuing evacuation in ingot furnace, to remove in described ingot furnace oils and fats within thermal field and silicon material and moisture impurity.
Concrete, within 4 hours, it being stepped up ingot furnace internal heater power, silicon material is heated up, temperature is set between 900 DEG C ~ 1200 DEG C, and technical process is specific as follows:
First paragraph: duration 0min～30min, pressure setting is vacuum mode, makes ingot furnace evacuation, controls ingot furnace internal gas pressure at below 0.01mbar, and in ingot furnace processed, heating electrode power is set as 10kw ~ 30kw, makes slowly to heat up in ingot furnace.
Second segment: duration 30min～60min, pressure setting is vacuum mode, makes ingot furnace evacuation, controls ingot furnace internal gas pressure at below 0.01mbar, and heating electrode power is set as 40kw ~ 60kw, increases programming rate in ingot furnace.
3rd section: duration 30min～120min, pressure setting is vacuum mode, makes ingot furnace evacuation, controls ingot furnace internal gas pressure at below 0.01mbar, and heating electrode power is set as 70kw ~ 90kw, increases programming rate in ingot furnace further.
4th section: duration 60min～240min, pressure setting is vacuum mode, makes ingot furnace evacuation, controls ingot furnace internal gas pressure at below 0.01mbar, and heating electrode power is set as 100kw ~ 120kw, until ingot casting in-furnace temperature reaches design temperature.
5th section: duration 30min～120min, pressure setting is vacuum mode, makes ingot furnace evacuation, controls ingot stove internal gas pressure at below 0.01mbar, and temperature is maintained at the design temperature of the 4th section, to remove thermal field inside and the oils and fats within silicon material and moisture impurity.
Owing to moisture will flash to gaseous state when 100 DEG C, oils and fats impurity can flash to gaseous state at 900 DEG C.In this step, by being heated to more than 900 DEG C and lasting evacuation, gaseous state moisture and oils and fats impurity being taken away, in maintenance ingot furnace, silicon material is pure.
Step S202, the temperature continued in raising ingot furnace, be completely melt the silicon material in ingot furnace, obtain silicon liquid.
Concrete, silicon material temperature degree is risen between 1500 DEG C ~ 1560 DEG C, it may be assumed that the temperature in ingot furnace being set between 1500 DEG C to 1560 DEG C, technical process is specific as follows:
First paragraph: duration 60min～240min, temperature steps up, and prepares for high temperature material, and pressure steps up to 300mbar ~ 400mbar.
Second segment: duration 180min～600min, Stress control remains unchanged in second segment maximal pressure force value, maintains high temperature melting SiClx material, until silicon material is completely melt.
Step S203, the temperature reduced in ingot furnace, make silicon liquid crystallization, until the silicon liquid in ingot furnace is fully crystallized as silicon ingot, obtains P-type dopant silicon ingot.
Concrete, gradually reduce silicon material temperature degree, make silicon liquid crystallization, meanwhile, control crystallization rate and be maintained between 0.1mm/h ~ 25mm/h.Technical process is specific as follows:
First paragraph: duration 15min～60min, pressure maintains step S202 second segment force value, is down between 1410 DEG C to 1450 DEG C by ingot casting in-furnace temperature, closes down and add thermode.
Second segment: duration 30min～90min, pressure maintains step S202 second segment force value, and temperature stabilization is in first step final temperature, and the temperature making each position of silicon liquid in ingot furnace is homogeneous, prepares long crystalline substance.
3rd section: duration 1200min～1800min, pressure maintains step S202 second segment force value, progressively lowers the temperature, and rate of crystalline growth controls at 0.1mm/h ~ 25mm/h, until silicon liquid is fully crystallized.
It addition, step S2 can also comprise the following steps after completing in other embodiments:
Step S204, the temperature continued in reduction ingot furnace, be annealed silicon ingot, to eliminate P-type dopant silicon ingot internal stress.
Concrete, to the P-type dopant silicon ingot annealing being fabricated to, anneal duration 60min～120min, make the pressure in ingot furnace be adjusted to 600mbar, eliminate P-type dopant silicon ingot internal stress by slow cooling.
Step S205, the temperature continued in reduction ingot furnace, and improve the air pressure in ingot furnace, until the temperature in ingot furnace is down to less than 450 DEG C, the air pressure in ingot furnace rises to normal pressure, is taken out by the P-type dopant silicon ingot in ingot furnace.
Concrete, the P-type dopant silicon ingot being fabricated to is lowered the temperature, lower the temperature duration 450min～600min, meanwhile, is stepped up furnace pressure to normal pressure, treats that temperature is to 450 DEG C, comes out of the stove.
By step S2, the underproof n type single crystal silicon sheet removing phosphorus atoms is fabricated to for P-type dopant silicon ingot.
Step S3, described P-type dopant silicon ingot is carried out break process, obtain P-type dopant.
Concrete, after P-type dopant silicon ingot is come out of the stove, after cooling down, it is possible to carry out break process, after broken, fritter is P type low-resistance adulterant.
The P-type dopant resistivity that the method in the present embodiment produces is used to be typically in 0.001 Ω cm ~ 0.01 Ω cm.Meet the technological requirement in p-type polysilicon or class monocrystalline silicon cast ingot process, meanwhile, can require that carrying out sorting uses according to required weight and resistivity in use.Owing to the method in the present embodiment uses the underproof n type single crystal silicon sheet containing boron element to make, it is a kind of recycling to defective n type single crystal silicon sheet, thus the present embodiment method has saved the energy, reduces production cost simultaneously.
Embodiment two
The present embodiment and a upper embodiment are different in that, the step S1 in the present embodiment adopts physical grinding method to remove containing the phosphorus atoms in the underproof n type single crystal silicon sheet of boron element.
Concrete, owing to the method for diffusion of n type single crystal silicon sheet is, the one side of n type single crystal silicon sheet is carried out boron diffusion, another side carries out phosphorus diffusion, therefore, the present embodiment is by being ground the one side containing phosphorus atoms in the underproof n type single crystal silicon sheet containing boron element, with the phosphorus atoms in the underproof n type single crystal silicon sheet containing boron element of removal, to reach the effect identical with step S1 in embodiment one.
Embodiment three
The present embodiment corresponds to the P-type dopant that the method in above-mentioned two embodiment is produced, wherein, P-type dopant in the present embodiment is to be made as raw material by the underproof n type single crystal silicon sheet containing boron element, and its resistivity is between 0.001 Ω cm ~ 0.01 Ω cm.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.The multiple amendment of these embodiments be will be apparent from for those skilled in the art, and generic principles defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention is not intended to be limited to the embodiments shown herein, and is to fit to the widest scope consistent with principles disclosed herein and features of novelty.
Claims (11)
1. the preparation method of a P-type dopant, it is characterised in that including:
A, utilize after the diffusion of n type single crystal silicon sheet phosphorus, boron defective as raw material, remove containing the phosphorus atoms in the underproof n type single crystal silicon sheet of boron element；
B, using remove phosphorus atoms underproof n type single crystal silicon sheet as raw material, casting obtains P-type dopant silicon ingot；
C, described P-type dopant silicon ingot is carried out break process, obtain P-type dopant.
2. method according to claim 1, it is characterised in that described step A includes:
A1, the described underproof n type single crystal silicon sheet containing boron element is immersed in salpeter solution, to remove the phosphorus atoms in described n type single crystal silicon sheet；
A2, described n type single crystal silicon sheet is soaked in a solution of hydrofluoric acid, with in removal step A1 on described n type single crystal silicon sheet surface because of the silicon dioxide layer that nitric acid and pasc reaction generate；
A3, described n type single crystal silicon sheet is immersed in sodium hydroxide solution, so that removal step A1 and step A2 to remain in the acid solution on described n type single crystal silicon sheet surface；
A4, described n type single crystal silicon sheet is immersed in hydrochloric acid solution, so that removal step A3 to remain in the sodium ion on described n type single crystal silicon sheet surface；
A5, by described n type single crystal silicon sheet dry.
3. method according to claim 2, it is characterised in that after each step of step A1-A5 has performed, all also include: soaked in pure water by described n type single crystal silicon sheet, to clean described n type single crystal silicon sheet.
4. method according to claim 3, it is characterised in that salpeter solution described in step A1 is concentration be 65%～68% analytical pure salpeter solution, including endpoint value, soak time is 0.8 hour～1.2 hours, including endpoint value.
5. method according to claim 3, it is characterised in that hydrofluoric acid solution described in step A2 is concentration be 40 ± 5% technical grade hydrofluoric acid solution, including endpoint value, soak time is 0.8 hour～1.2 hours, including endpoint value.
6. method according to claim 3, it is characterised in that sodium hydroxide solution described in step A3 is concentration be 4.5%～5.5% top grade pure cerium hydroxide sodium solution, including endpoint value, soak time is 25 minutes～35 minutes, including endpoint value.
7. method according to claim 3, it is characterised in that hydrochloric acid solution described in step A4 is concentration is the hydrochloric acid solution of 13%～17%, including endpoint value, soak time is 5 minutes～10 minutes, including endpoint value.
8. method according to claim 1, it is characterised in that described step A includes:
The one side containing phosphorus atoms in described n type single crystal silicon sheet is ground, to remove the phosphorus atoms in described n type single crystal silicon sheet.
9. method according to claim 1, it is characterised in that after described step A, before step B, also include:
The electrical property of described n type single crystal silicon sheet is tested, if conduction type is P type, then carries out step B；If conduction type is N-type, then the resistivity of described n type single crystal silicon sheet is measured, if resistivity is more than 1 Ω cm, then carry out step B, otherwise, return step A.
10. method according to claim 1, it is characterised in that described step B includes:
B1, the underproof n type single crystal silicon sheet removing phosphorus atoms is put into ingot furnace as silicon material, improve the temperature in described ingot furnace, and, to continuing evacuation in described ingot furnace, to remove in described ingot furnace oils and fats within thermal field and silicon material and moisture impurity；
B2, the temperature continued in the described ingot furnace of raising, be completely melt the silicon material in described ingot furnace, obtain silicon liquid；
B3, the temperature reduced in described ingot furnace, make silicon liquid crystallization, until the silicon liquid in described ingot furnace is fully crystallized as silicon ingot, obtains P-type dopant silicon ingot.
11. method according to claim 10, it is characterised in that also include after described step B3:
B4, the temperature continued in the described ingot furnace of reduction, be annealed described silicon ingot, to eliminate P-type dopant silicon ingot internal stress；
B5, the temperature continued in the described ingot furnace of reduction, and improve the air pressure in described ingot furnace, until the temperature in described ingot furnace is down to less than 450 DEG C, the air pressure in described ingot furnace rises to normal pressure, is taken out by the P-type dopant silicon ingot in described ingot furnace.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101122047A (en) * | 2007-09-14 | 2008-02-13 | 李绍光 | Method for manufacturing polycrystalline silicon used for solar battery |
| CN101306817A (en) * | 2008-02-04 | 2008-11-19 | 刘培东 | Process for removing phosphorus, arsenic, stibium, and boron in heavily-doped Si and device |
| CN101381888A (en) * | 2008-09-25 | 2009-03-11 | 苏州市矽美仕半导体材料有限公司 | Method for producing silicon single crystal |
| CN101591806A (en) * | 2008-05-28 | 2009-12-02 | 镇江大成硅科技有限公司 | The preparation method of solar energy Phi 6 inches dislocation-free single crystal silicon |
| CN102336409A (en) * | 2011-07-30 | 2012-02-01 | 常州天合光能有限公司 | Method for reducing metal impurities in polysilicon |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3752890B2 (en) * | 1999-05-26 | 2006-03-08 | 株式会社Ｓｕｍｃｏ | Method for producing silicon single crystal ingot |
| NO333319B1 (en) * | 2003-12-29 | 2013-05-06 | Elkem As | Silicon material for the production of solar cells |
| US20090039478A1 (en) * | 2007-03-10 | 2009-02-12 | Bucher Charles E | Method For Utilizing Heavily Doped Silicon Feedstock To Produce Substrates For Photovoltaic Applications By Dopant Compensation During Crystal Growth |
-
2013
- 2013-01-09 CN CN201310007757.9A patent/CN103014839B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101122047A (en) * | 2007-09-14 | 2008-02-13 | 李绍光 | Method for manufacturing polycrystalline silicon used for solar battery |
| CN101306817A (en) * | 2008-02-04 | 2008-11-19 | 刘培东 | Process for removing phosphorus, arsenic, stibium, and boron in heavily-doped Si and device |
| CN101591806A (en) * | 2008-05-28 | 2009-12-02 | 镇江大成硅科技有限公司 | The preparation method of solar energy Phi 6 inches dislocation-free single crystal silicon |
| CN101381888A (en) * | 2008-09-25 | 2009-03-11 | 苏州市矽美仕半导体材料有限公司 | Method for producing silicon single crystal |
| CN102336409A (en) * | 2011-07-30 | 2012-02-01 | 常州天合光能有限公司 | Method for reducing metal impurities in polysilicon |
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