CN103014664B - Chemical vapor deposition apparatus - Google Patents
Chemical vapor deposition apparatus Download PDFInfo
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- CN103014664B CN103014664B CN201110287031.6A CN201110287031A CN103014664B CN 103014664 B CN103014664 B CN 103014664B CN 201110287031 A CN201110287031 A CN 201110287031A CN 103014664 B CN103014664 B CN 103014664B
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Abstract
The invention relates to a chemical vapor deposition apparatus comprising a reaction chamber, a cooling device, a spray assembly located at top of the reaction chamber and a base arranged opposite to the spray assembly, wherein the base comprises a heating unit, and the spray assembly comprises a first air inlet apparatus and a second air inlet apparatus which are respectively used for transmitting a first gas and a second gas to a reaction zone between the base and the spray assembly. The apparatus further comprises a distance piece arranged between the first air inlet apparatus and the second air inlet apparatus. The cooling device, the first air inlet apparatus, the distance piece and the second air inlet apparatus are sequentially arranged in stack. A thermal conductivity of the distance piece is less than that of the first air inlet apparatus. During a heating process by the heating unit, the first air inlet apparatus and the second air inlet apparatus have different temperatures. The apparatus can provide different temperatures for gases in different air inlet apparatuses.
Description
Technical field
The present invention relates to chemical vapour deposition technique field, particularly a kind of chemical vapor deposition unit.
Background technology
Chemical vapour deposition (Chemical vapor deposition, be called for short CVD) be that reactive material issues biochemical reaction at gaseous condition, generate the solid matrix surface that solid matter is deposited on heating, and then the Technology of obtained solid material, it is achieved by chemical vapor deposition unit.Particularly, reactant gases is passed in reaction chamber by diffuser by CVD device, and controls the reaction conditions such as pressure, temperature of reaction chamber, reactant gases is reacted, thus completes deposition process step.In order to deposit required film, generally needing in reaction chamber, pass into multiple different reactant gases, and also needing in reaction chamber, pass into other nonreactive gass such as carrier gas or sweeping gas, therefore needing to arrange multiple diffuser in CVD device.Below for metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, MOCVD) device, introduce the CVD device that prior art comprises multiple diffuser.
MOCVD is mainly used in the iii-v such as gan, gallium arsenide, indium phosphide, zinc oxide, the preparation of the thin layer monocrystalline functional structure material of II-VI group compound and alloy, along with the range of application of above-mentioned functions structured material constantly expands, MOCVD device is one of important device becoming chemical vapor deposition unit.MOCVD is generally using II race or III metal organic source and VI race or V race hydride source etc. as reactant gases, with hydrogen or nitrogen as carrier gas, on substrate, carry out vapor phase epitaxial growth in pyrolysis mode, thus grow the thin layer monocrystal material of various II-VI compound semiconductor, Group III-V compound semiconductor and their multivariate solid solution.Due to II race or III metal organic source different with the transmission condition of VI race or V race hydride source, therefore need respectively II race or III metal organic source and VI race or V race hydride source to be transferred to surface by different diffusers.
MOCVD device of the prior art generally comprises:
Reaction chamber;
Be positioned at the spray assemblies at described reaction chamber top, described spray assemblies comprises two diffusers, and II race or III metal organic source and VI race or V race hydride source are transferred to surface by described two diffusers respectively;
The pedestal be oppositely arranged with described spray assemblies, described pedestal has heating unit, and described pedestal is used for supporting and heated substrates.
Described spray assemblies is different with the flow direction of opposing substrate according to the air-flow of reactant gases, is divided into rectilinear and horizontal.Horizontal spray assemblies refers to that described spray assemblies makes the air-flow of reactant gases along the horizontal direction flowing being parallel to substrate; Rectilinear spray assemblies refers to that the air-flow of reactant gases flows along the vertical direction of vertical substrate.Compared with horizontal spray assemblies, rectilinear spray assemblies can produce two-dimensional axial symmetric flowing, suppresses thermal convection vortex, forms more uniform speed, temperature and concentration boundary layer respectively, thus obtain better thin film deposition in surface.
See China Patent Publication No. be: CN101122012A, this patent application provides a kind of spray assemblies, it can realize III metallorganics and V race hydride gas is independently supplied gas from spray assemblies one-piece construction both sides respectively, and evenly spray at the types of flexure of reaction chamber, its method realized is: comprise two groups of pectination spray headers, first group of pectination spray header is made up of the gas A vent branch 3 that gas house steward A 2 and Duo Gen that inlet suction port 1 is housed are arranged in parallel, one end of described gas A vent branch 3 is communicated with described gas house steward A 2 and the other end is blind end, second group of pectination spray header is made up of the gas B vent branch 6 that gas house steward B 5 and Duo Gen that inlet suction port 4 is housed are arranged in parallel, one end of described each gas B vent branch 6 is communicated with described gas house steward B 5 and the other end is blind end, specifically as shown in Figure 1.
See U.S. Patent Publication No. be: US2009/0098276A1, which provide the spray header form that current MOCVD device is the most general, III metal organic source and V race hydride source gas enter the first air inlet overall channel and the second air inlet overall channel of spray header device respectively from two inlet mouths, and by the first bypass passage and the second bypass passage, finally enter hybrid channel, backward substrate of giving vent to anger sprays.There is pyrolysis in III metal organic source gas and V race hydride source gas, and be epitaxially grown to Group III-V compound semiconductor respectively on the substrate of heating.
In prior art, in CVD device, in spray assemblies, each diffuser is all equal with the distance of pedestal, and each diffuser generally adopts identical material, namely the heat-conduction coefficient of each diffuser is identical, the temperature of each diffuser therefore in same reaction chamber is identical, finally makes the temperature of all reactant gasess identical.But the decomposition temperature of differential responses gas may be different, if the decomposition temperature of III metal organic source is well below the decomposition temperature of V race hydride source.
When III metal organic source and V race hydride source gas are heated to comparatively high temps by MOCVD device simultaneously, just first can there is decomposition reaction in III metal organic source, and react with V race hydride source gas, thus can produce a large amount of solid particulates.These solid particulates can be deposited on the surface of spray assemblies on the one hand, finally may drop on the film deposited; Therefore, on the film that prevents from the particle on the surface being deposited on spray assemblies from dropping on depositing, need often to clean spray assemblies, thus increase the cost cleaned; On the other hand, the generation of these solid particulates consumes partial reaction gas, thus causes the waste of material, and the price of metal organic (Metal Organic, MO) source material is very expensive, this inevitable raising just causing production cost.Meanwhile, due to particle contamination, also reduce the deposition quality of film.
When III metal organic source and V race hydride source gas are heated to lesser temps by MOCVD device simultaneously, just not easily there is decomposition reaction in V race hydride source gas, and final being just difficult to forms iii-v dense film.Even if deposition obtains film, these films also have a lot of pore, and are easy to come off.
In sum, in prior art MOCVD device by III metal organic source and V race hydride source gas heating to same temperature, the poor quality of the film of end reaction deposition, and film deposition rate is low, production cost is high.In other CVD device except MOCVD device, also there is the situation that Heating temperature needed for differential responses gas is different, when by these differential responses gas heating to same temperature, similarly, the film quality of end reaction deposition is very poor, and film deposition rate is low, production cost is high.Similarly, in other CVD device, other need the situation of differing temps also to there are differential responses.
Therefore, CVD device how is made to provide different temperature just to become technical problem urgently to be resolved hurrily for different reactant gasess.
Summary of the invention
The object of this invention is to provide a kind of chemical vapor deposition unit, think that the gas in various inlet device provides different temperature.
For solving the problem, the invention provides a kind of chemical vapor deposition unit, comprise: reaction chamber, refrigerating unit, the spray assemblies being positioned at described reaction chamber top and the pedestal be oppositely arranged with described spray assemblies, described pedestal has heating unit, described spray assemblies comprises the first diffuser and the second diffuser, for respectively by the first gas and the second gas transmission to the reaction zone between pedestal and spray assemblies; Be arranged on the distance piece between described first diffuser and described second diffuser, described refrigerating unit, described first diffuser, described distance piece and described second diffuser are cascading, the heat-conduction coefficient of described distance piece is less than the heat-conduction coefficient of described first diffuser, in described heating unit heats process, described first diffuser has different temperature from described second diffuser.
Preferably, the heat-conduction coefficient of described first diffuser equals the heat-conduction coefficient of described second diffuser.
Preferably, described first diffuser and be the material comprising graphite or silicon carbide with the material of described second diffuser, the material composition of described distance piece comprise in steel, aluminium, copper, gold and silver one or more.
Preferably, the heat-conduction coefficient of described first diffuser is greater than the heat-conduction coefficient of described second diffuser.
Preferably, the heat-conduction coefficient of described distance piece is more than or equal to the heat-conduction coefficient of described second diffuser.
Preferably, the material of described first diffuser comprises graphite or silicon carbide, the material composition of described second diffuser comprise in steel, aluminium, copper, gold and silver one or more.
Preferably, the heat emissivity coefficient of described first diffuser is less than the heat emissivity coefficient of described second diffuser.
Preferably, described first gas comprises one or more in reacting precursor, carrier gas, sweeping gas.
Preferably, described second gas comprises one or more in reacting precursor, carrier gas, sweeping gas.
Preferably, described first diffuser is for transmitting III metal organic source, and described second diffuser is for transmitting V race hydride source.
Preferably, described III metal organic source comprises Ga (CH
3)
3, In (CH
3)
3, Al (CH
3)
3, Ga (C
2h
5)
3, Zn (C
2h
5)
3one or more in gas.
Preferably, described V race hydride source comprises NH
3, PH
3, AsH
3one or more in gas.
Preferably, described heating unit is in heat-processed, and the temperature of described first diffuser is lower than the temperature of described second diffuser.
Preferably, the temperature head between described first diffuser and described second diffuser is more than or equal to 100 DEG C and is less than or equal to 600 DEG C.
Preferably, the temperature of described first diffuser is more than or equal to 35 DEG C and is less than or equal to 600 DEG C, and the temperature of described second diffuser is more than or equal to 135 DEG C and is less than or equal to 800 DEG C.
Preferably, described chemical vapor deposition unit also comprises: rotary drive unit, and described rotary drive unit rotates in the deposition process of described chemical vapor deposition unit for driving described pedestal or spray assemblies.
Preferably, described second diffuser comprises some gas distribution pipelines, gas distribution pipeline described in each has some second pores, described distance piece and described gas distribution pipeline are all embedded among described first diffuser at least partly, and described gas distribution pipeline exposes described second pore and discharges from described second pore to make the second gas to described reaction zone.
Preferably, the plate body that is formed in one of described first diffuser.
Preferably, described refrigerating unit has cooling channel, in order to pass into cooling gas or cooling liqs.
Preferably, described first diffuser is diffusion disc, and described diffusion disc has upper surface and the lower surface relative with described upper surface, and described upper surface is close to described refrigerating unit, described upper surface is provided with the first inlet mouth and gaseous diffusion cell, and described lower surface is provided with some first pores; Described first gas enters described reaction zone via described first inlet mouth, gaseous diffusion cell and described first pore successively.
Preferably, described gaseous diffusion cell has at least one first spreading grooves and multiple second spreading grooves, described first spreading grooves annularly arranging in week along described diffusion disc, described second spreading grooves is arranged along the radial direction of described diffusion disc, described second spreading grooves connects described first spreading grooves, first gas flows into described second spreading grooves by described first spreading grooves, and described first pore connects described second spreading grooves.
Preferably, described first inlet mouth is set to two, is separately positioned on the relative both sides of described diffusion disc.
Preferably, arbitrary described first inlet mouth is arranged in described first spreading grooves, and described in adjacent two between second spreading grooves.
Preferably, described second diffuser comprises air-guide disk and some gas service pipess; Described spray assemblies also comprises the second induction trunk, and described second induction trunk runs through the center of described diffusion disc and is connected with described air-guide disk; Described gas service pipes is provided with some second pores, one end of described gas service pipes is communicated with described air-guide disk; Described second gas enters described reaction zone via described second induction trunk, air-guide disk, gas service pipes and described second pore successively.
Preferably, described each gas service pipes is isometric, and radially evenly arranges around described air-guide disk.
Preferably, the length of described gas service pipes equals the difference of described diffusion disc radius and described air-guide disk radius.
Preferably, described chemical vapor deposition unit is MOCVD (MOCVD) device, low-pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition, LPCVD) device, plasma activated chemical vapour deposition (Plasma Chemistry Vapor Deposition, PCVD) device or ald (Atomic Layer Deposition, ALD) device.
Preferably, the thickness of described distance piece is more than or equal to 0.1mm and is less than or equal to 2mm.
Compared with prior art, the present invention has the following advantages:
1) embodiment of the present invention comprises the distance piece be arranged between the first diffuser and the second diffuser, refrigerating unit, first diffuser, described distance piece and described second diffuser are cascading, the heat-conduction coefficient of described distance piece is less than the heat-conduction coefficient of described first diffuser, because described second diffuser needs to carry out heat exchange by described distance piece and described refrigerating unit, described refrigerating unit is different from cooling performance with the speed of cooling of the second diffuser to described first diffuser, thus make described heating unit in heat-processed, described first diffuser has different temperature from described second diffuser, and then can be avoided the low gas of the decomposition temperature that enters described reaction zone from described first diffuser at high temperature first there is predecomposition after gas reaction high with the decomposition temperature entering reaction zone from the second diffuser again produce a large amount of solid particulate, reduce the solid particulate be deposited on spray assemblies and depart from possibility on film, it also avoid the high gas of decomposition temperature cannot decompose at low temperatures, improve the speed of thin film deposition, improve the quality of film, save starting material, reduce cleaning and production cost.
2) described first diffuser is for transmitting III metal organic source, described second diffuser is for transmitting V race hydride source, because MOCVD growth technique requires high, the temperature control that usual needs are high, and need the proportioning accurately controlling reactant gases, and the decomposition temperature of the decomposition temperature of III metal organic source and V race hydride source has larger difference, therefore when controlling the temperature of III metal organic source and V race hydride source respectively, just the generation of side reaction can be reduced, improve quality and the sedimentation rate of III-V rete, prevent the waste of III metal organic source and V race hydride source.
3) temperature of described first diffuser is more than or equal to 35 DEG C and is less than or equal to 600 DEG C, the temperature of described second diffuser is more than or equal to 135 DEG C and is less than or equal to 800 DEG C, this is because, the decomposition temperature of described III metal organic source is far below the decomposition temperature of V race hydride source, the invention enables the temperature of III metal organic source and V race hydride source to be in respectively within the scope of separately best decomposition temperature, thus the iii-v dense film of better quality can be obtained with speed of reaction faster.
4) described chemical vapor deposition unit also comprises: rotary drive unit, and described rotary drive unit drives described pedestal or spray assemblies to rotate in the deposition process of described chemical vapor deposition unit, finally make thin film deposition evenly.
5) described second diffuser comprises some gas distribution pipelines with some second pores, described gas distribution pipeline part inlay is among described first diffuser, described second pore is arranged on described gas distribution pipeline, described gas distribution pipeline exposes described second pore and can discharge to described second pore to make the second gas to described reaction zone, thus make described spray assemblies compacter, be conducive to the volume reducing described chemical vapor deposition unit.
6) described first diffuser is diffusion disc, and described diffusion disc has upper surface and the lower surface relative with described upper surface, and described upper surface is provided with the first inlet mouth and gaseous diffusion cell, and described lower surface is provided with some first pores; Described first gas enters described reaction zone via described first inlet mouth, gaseous diffusion cell and described first pore successively, after first gas can first evenly spread in gaseous diffusion cell, enter reaction zone equably from the first pore again, thus make to enter the first gas uniform of reaction zone and contact with the first diffuser fully and then accurately control the temperature of the first gas.
7) described gaseous diffusion cell has at least one first spreading grooves and multiple second spreading grooves, described first spreading grooves annularly arranging in week along described diffusion disc, described second spreading grooves is arranged along the radial direction of described diffusion disc, described first spreading grooves cushions the first gas entered in the first spreading grooves, first gas is evenly spread in the first spreading grooves, thus make to flow to described multiple second gaseous diffusion cell with entering the first gas uniform, further increase the homogeneity that the first gas diffuses to reaction zone.
8) described first inlet mouth is set to two, is separately positioned on the relative both sides of described diffusion disc, and while guarantee first gas high flow, structure is simple, improves the homogeneity of the first gas flow.
9) arbitrary described first inlet mouth is arranged in described first spreading grooves, and between described adjacent two second spreading grooves, after first gas like this can first can fully spread in the first spreading grooves, enter the second spreading grooves, and directly can not enter specific second gaseous diffusion cell, that causes the second gas to distribute in the second spreading grooves is uneven, thus adds the homogeneity that the first gas enters reaction zone.
10) described second diffuser comprises air-guide disk and some gas service pipess; Described spray assemblies also comprises the second induction trunk, and described second induction trunk runs through described diffusion disc and is communicated with described air-guide disk; Described gas service pipes is provided with some second pores, one end of described gas service pipes is connected with described air-guide disk; Described second gas enters described reaction zone via described second induction trunk, air-guide disk, gas service pipes and described second pore successively, because the second gas introduced from the second induction trunk first flow in described gas service pipes again after buffering in described gas diffusion disc, thus enhance the homogeneity that the second gas distributes between each gas service pipes, enter described reaction zone with ensure that the second gas uniform.
11) described each gas service pipes is isometric, and radially evenly arranges around described air-guide disk, and while the diffusion of guarantee second gas uniform, described second diffuser structure is simple, saves space.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of spray assemblies of prior art;
Fig. 2 is the structural representation of the CVD device of the embodiment of the present invention one;
Fig. 3 is the structural representation obtained along AA ' direction in Fig. 2;
Fig. 4 is the structural representation of the CVD device of the embodiment of the present invention two;
Fig. 5 is the structural representation obtained along BB ' direction in Fig. 4;
Fig. 6 is the structural representation of the CVD device of the embodiment of the present invention three;
Fig. 7 is the structural representation obtained along CC' direction in Fig. 6;
Fig. 8 is the structural representation of the CVD device of the embodiment of the present invention four;
Fig. 9 is the surface structure schematic diagram of the spray assemblies of the embodiment of the present invention four;
Figure 10 is the lower surface configuration schematic diagram of the spray assemblies of the embodiment of the present invention four.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, therefore the present invention is not by the restriction of following public specific embodiment.
Just as described in the background section, need in CVD device to pass into multiple gases, existing CVD device is heated to uniform temp by unified for all gas passed into, but the temperature needed for gas with various there are differences, because this reducing the speed of thin film deposition, introduce defect in the film, cause raw-material waste, improve production cost.
For overcoming above-mentioned defect, the invention provides a kind of chemical vapor deposition unit, comprise: reaction chamber, refrigerating unit, the spray assemblies being positioned at described reaction chamber top and the pedestal be oppositely arranged with described spray assemblies, described pedestal has heating unit, described spray assemblies comprises the first diffuser and the second diffuser, for respectively by the first gas and the second gas transmission to the reaction zone between pedestal and spray assemblies; Be arranged on the distance piece between described first diffuser and described second diffuser, described refrigerating unit, described first diffuser, described distance piece and described second diffuser are cascading, the heat-conduction coefficient of described distance piece is less than the heat-conduction coefficient of described first diffuser, in described heating unit heats process, described first diffuser has different temperature from described second diffuser.Described first diffuser is adjacent with described refrigerating unit and carry out direct heat exchange, described distance piece is provided with between described first diffuser and described second diffuser, therefore described second diffuser needs to carry out heat exchange by described distance piece and described first diffuser, described first diffuser carries out heat exchange with described refrigerating unit again, and, the heat-conduction coefficient of described distance piece is less than the heat-conduction coefficient of described first diffuser, the heat exchange between described second diffuser and described first diffuser is made to be subject to the obstruct of described distance piece, thus make described first diffuser have different temperature from described second diffuser.Gas reaction high with decomposition temperature again after avoiding the at high temperature first generation predecomposition of the low gas of decomposition temperature also produces a large amount of solid particulate, reduce the solid particulate be deposited on spray assemblies and depart from possibility on film, it also avoid the high gas of decomposition temperature cannot decompose at low temperatures, improve the speed of thin film deposition, improve the quality of film, save starting material, reduce cleaning and production cost.
Be described in detail below in conjunction with accompanying drawing.
Embodiment one
Fig. 2 is the structural representation of the present embodiment CVD device, and Fig. 3 is the structural representation obtained along AA ' direction in Fig. 2.As shown in Figures 2 and 3, the CVD device described in the present embodiment comprises:
Reaction chamber 600;
Refrigerating unit 200;
Be positioned at the spray assemblies at described reaction chamber 600 top, described spray assemblies comprises the first diffuser 300 and the second diffuser 400, for respectively by the first gas and the second gas transmission to the reaction zone between pedestal 100 and spray assemblies;
Be arranged on the distance piece 700 between described first diffuser 300 and described second diffuser 400, described refrigerating unit 200, described first diffuser 300, described distance piece 700 and described second diffuser 700 are cascading, and the heat-conduction coefficient of described distance piece 700 is less than the heat-conduction coefficient of described first diffuser 300;
The pedestal 100 be oppositely arranged with described spray assemblies, pending substrate 500 is positioned on pedestal 100, and described pedestal 100 has heating unit 120.
The present embodiment comprises the distance piece 700 be arranged between the first diffuser 300 and the second diffuser 400, described refrigerating unit 200, described first diffuser 300, described distance piece 700 and described second diffuser 400 are cascading, two diffusers are isolated by distance piece 700, and the heat-conduction coefficient of described distance piece 700 is less than the heat-conduction coefficient of described first diffuser 300.Described first diffuser 300 is adjacent with described refrigerating unit 200 and carry out direct heat exchange, described distance piece 700 is provided with between described first diffuser 300 and described second diffuser 400, therefore described second diffuser 400 needs to carry out heat exchange by described distance piece 700 with described first diffuser 300, described first diffuser 300 carries out heat exchange with described refrigerating unit 200 again, and, the heat-conduction coefficient of described distance piece 700 is less than the heat-conduction coefficient of described first diffuser 300, the heat exchange between described second diffuser 400 and described first diffuser 300 is made to be subject to the obstruct of described distance piece 700, thus make described first diffuser 300 have different temperature from described second diffuser 400.Gas reaction high with decomposition temperature again after avoiding the at high temperature first generation predecomposition of the low gas of decomposition temperature also produces a large amount of solid particulate, reduce the solid particulate be deposited on spray assemblies and depart from possibility on film, it also avoid the high gas of decomposition temperature cannot decompose at low temperatures, improve the speed of thin film deposition, improve the quality of film, save starting material, reduce cleaning and production cost.
Described first gas comprise in reacting precursor, carrier gas, sweeping gas one or more, described second gas also comprise in reacting precursor, carrier gas, sweeping gas one or more, can according to air-transmitting difference, make described first diffuser 300 have different temperature from described second diffuser 400, therefore described first gas has different temperature from described second gas.
Described CVD device can be the one in MOCVD device, LPCVD device, PCVD device or ALD device.Below for described CVD device for MOCVD device, namely described first diffuser 300 is for transmitting III metal organic source, described second diffuser 400 is that example is described for transmitting V race hydride source, because MOCVD growth technique requires high, the temperature control that usual needs are high, and need the proportioning accurately controlling reactant gases, and the decomposition temperature of the decomposition temperature of III metal organic source and V race hydride source has larger difference, therefore when controlling to make III metal organic source different with the temperature of V race hydride source, make III metal organic source with V race hydride source receive different decomposition temperature, just the generation of side reaction can be reduced, improve quality and the sedimentation rate of Group III-V compound semiconductor, prevent the waste of III metal organic source and V race hydride source.
Now the temperature of described first diffuser 300 is less than the temperature of described second diffuser 400, but should not limit the scope of the invention with this.It should be noted that, while the first diffuser 300 transmits III metal organic source and the second diffuser 400 transmits V race hydride source, the first diffuser 300 and the second diffuser 400 can also transmit carrier gas simultaneously, as: hydrogen or nitrogen.
Described III metal organic source comprises Ga (CH
3)
3, In (CH
3)
3, Al (CH
3)
3, Ga (C
2h
5)
3, Zn (C
2h
5)
3one or more in gas, its decomposition temperature is more than or equal to 35 DEG C and is less than or equal to 600 DEG C.Described V race hydride source comprises NH
3, PH
3, AsH
3one or more in gas, its decomposition temperature is more than or equal to 135 DEG C and is less than or equal to 800 DEG C.Therefore, in the present embodiment, preferably, the temperature head between described first diffuser 300 and described second diffuser 400 is more than or equal to 100 DEG C and is less than or equal to 600 DEG C.Need to make the temperature of described first diffuser 300 be more than or equal to 35 DEG C and be less than or equal to 600 DEG C at the present embodiment, the temperature of described second diffuser 400 is more than or equal to 135 DEG C and is less than or equal to 800 DEG C.Because the decomposition temperature of III metal organic source is far below the decomposition temperature of V race hydride source, the present embodiment makes the temperature of III metal organic source and V race hydride source be in respectively within the scope of respective preferably decomposition temperature, thus speed of reaction can obtain the iii-v dense film of better quality faster.
Described pedestal 100 comprises: supporting seat 110, and one or more pending substrates 500 can be arranged on the upper surface of described supporting seat 110; Heating unit 120, is arranged on below described supporting seat 110, for heating described substrate 500.
In the present embodiment, the heat-conduction coefficient of the first diffuser 300 is greater than the heat-conduction coefficient of distance piece 700, because described second diffuser 400 needs to carry out heat exchange with described refrigerating unit 200 again by described distance piece 700, described distance piece 700 reduces the exchange rate between the second diffuser 400 and described refrigerating unit 200, therefore the cooling performance of refrigerating unit 200 to the first diffuser 300 must be greater than the cooling performance to the second diffuser 400.
Described second diffuser 400 and described distance piece 700 have the region penetrating described first diffuser 300 and described distance piece 700, and described first diffuser 300 directly accepts the thermal radiation of the well heater 120 of described pedestal 100 by described region.
The heat emissivity coefficient of described first diffuser 300 can be greater than the heat emissivity coefficient of described second diffuser 400, as: as described in the material of the first diffuser 300 can be graphite or silicon carbide, or the mixture of graphite and silicon carbide and laminate, the material composition of described second diffuser 400 can comprise in steel, aluminium, copper, gold and silver one or more.Although the heat emissivity coefficient of the first diffuser 300 can be greater than the heat emissivity coefficient of described second diffuser 400, described first diffuser 300 is made to have stronger thermal-radiating receptivity, but, due to described refrigerating unit 200, described first diffuser 300, described distance piece 700 and described second diffuser 400 are cascading, and the heat-conduction coefficient of described distance piece 700 is less than the heat-conduction coefficient of described first diffuser 300, described distance piece 700 has intercepted the heat exchange between described second diffuser 400 and described first diffuser 300, therefore the temperature of the temperature of described first diffuser 300 lower than described second diffuser 400 can still be ensured.Preferably, price comparison due to graphite is low and heat-conductive characteristic is relatively good, stainless steel physical and chemical performance is stablized, therefore the material of described first diffuser 300 is graphite, the material of described second diffuser 400 is stainless steel, thus reduces the production cost of the first diffuser 300 and the second diffuser 400.
The heat emissivity coefficient of described first diffuser 300 preferably can equal the heat emissivity coefficient of described second diffuser 400, so, can guarantee the temperature head between described first diffuser 300 and described second diffuser 400.Further, the heat emissivity coefficient of described first diffuser 300 can also be less than the heat emissivity coefficient of described second diffuser 400.Now, the heat emissivity coefficient of the first diffuser 300 is less than the heat emissivity coefficient of the second diffuser 400, will guarantee that the temperature head between described first diffuser 300 and described second diffuser 400 reaches certain numerical value further, thus be more prone to realize the different of temperature between described first diffuser 300 from described second diffuser 400.
The heat-conduction coefficient of described distance piece 700 is less than the heat-conduction coefficient of described first diffuser 300; The material of described first diffuser 300 can be graphite or silicon carbide, the material composition of described distance piece 700 can comprise in steel, aluminium, copper, gold and silver one or more.Preferably, price comparison due to graphite is low and heat-conductive characteristic is relatively good, stainless steel physical and chemical performance is stablized, therefore the material of described first diffuser 300 is graphite, the material of described distance piece 700 is stainless steel, thus reduces the production cost of the first diffuser 300 and distance piece 700.
The heat-conduction coefficient of described distance piece 700 can be more than or equal to the heat-conduction coefficient of described second diffuser 400, and now the heat-conduction coefficient of the first diffuser 300 must be greater than the heat-conduction coefficient of described second diffuser 400.As: the material of the first diffuser 300 is graphite, and the material of distance piece 700 is copper, and the material of described second diffuser 400 is stainless steel.
The heat-conduction coefficient of described distance piece 700 can also be less than the heat-conduction coefficient of described second diffuser 400, now the heat-conduction coefficient of the first diffuser 300 can be greater than the heat-conduction coefficient of described second diffuser 400, as: the material of the first diffuser 300 is graphite, the material of described second diffuser 400 is silver, and the material of described distance piece 700 is gold; The heat-conduction coefficient of the first diffuser 300 can also be less than or equal to the heat-conduction coefficient of described second diffuser 400, as: as described in the material of distance piece 700 be stainless steel, the material of described first diffuser 300 and described second diffuser 400 is graphite.So, due to the existence of described distance piece 700, make the Material selec-tion of described second diffuser 400 more extensive, be conducive to the reduction of described chemical vapor deposition unit manufacturing cost.
Preferably, the heat-conduction coefficient of described first diffuser 300 is greater than the heat-conduction coefficient of described second diffuser 400, described first diffuser 300, the heat-conduction coefficient of described distance piece 700 and described second diffuser 400 reduces successively, thus the cooling performance of refrigerating unit 200 to the first diffuser 300 and the second diffuser 400 reduces successively, add described second diffuser 400 to need to carry out heat exchange by described distance piece 700 with described refrigerating unit 200, therefore can ensure that the temperature of the first diffuser 300 is less than the temperature of the second diffuser 400.
Be more than or equal to 35 DEG C to make the temperature of the first diffuser 300 and be less than or equal to 600 DEG C, the temperature of the second diffuser 400 is more than or equal to 135 DEG C and is less than or equal to 800 DEG C, the temperature of refrigerating unit 200 described in the present embodiment can be more than or equal to 10 DEG C and be less than or equal to 100 DEG C, and the temperature of described heating unit 120 can be more than or equal to 1000 DEG C and be less than or equal to 1500 DEG C.Such as: when the temperature of described refrigerating unit 200 is 50 DEG C, when the temperature of heating unit 120 is 1200 DEG C, the temperature of the first diffuser 300 is 290 DEG C, and the temperature of the second diffuser 400 is 680 DEG C.Further, by controlling the temperature of described heating unit 120 and described refrigerating unit 200, mainly by controlling the temperature of described refrigerating unit 200, just can according to the temperature of gas with various constituent adjustment first diffuser 300 and the second diffuser 400.
The thickness of distance piece 700 described in the present embodiment can be more than or equal to 0.1mm and be less than or equal to 2mm, as: 0.1mm, 0.5mm, 1.0mm or 2mm etc.
Described CVD device can also comprise: the proofing unit (not shown) be made up of temperature sensor and baroceptor; Control device (not shown), it connects each temperature sensor, baroceptor, refrigerating unit 200 and heating unit 120 respectively.
Described baroceptor can be 1, be arranged on described reaction zone, the current gas pressure of the reaction zone detected is sent to control device, control device analysis obtains the difference of the current gas pressure of reaction zone and the air pressure needed for thin film deposition reaction, and then control device realize the air pressure of reaction chamber 600 adjust, until make the current gas pressure of reaction zone equal thin film deposition react needed for air pressure.
Described temperature sensor can be multiple, can at the first diffuser 300, second diffuser 400, refrigerating unit 200 and heating unit 120 arrange a temperature sensor respectively, be respectively used to the Current Temperatures of detection first diffuser 300, the Current Temperatures of the second diffuser 400, the Current Temperatures of refrigerating unit 200 and the Current Temperatures of heating unit 120, and send to control device by detecting the said temperature obtained, control device by the Current Temperatures of analysis first diffuser 300 and the first diffuser 300 temperature required between the difference of temperature, the Current Temperatures of the second diffuser 400 and the second diffuser 400 temperature required between the difference of temperature regulate the temperature of refrigerating unit 200 or the temperature of heating unit 120, until make the Current Temperatures of the first diffuser 300 be more than or equal to 35 DEG C and be less than or equal to 600 DEG C, the Current Temperatures of the second diffuser 400 is more than or equal to 135 DEG C and is less than or equal to 800 DEG C, thus the process of thin film deposition can be controlled more accurately.
In MOCVD device, the material of described reaction chamber 600 is generally stainless steel.
The material of described supporting seat 110 can be graphite, preferably, described supporting seat 110 can also arrange one deck silicon carbide (SiC) layer on the surface of graphite, thus make supporting seat 110 have high temperature resistant, anti-oxidant, purity is high and the characteristic such as acidproof alkali salt and organic reagent corrosion, physical and chemical performance is more stable.
Described heating unit 120 is specifically as follows radio-frequency heater, infrared radiation heater or resistance heater etc., can carry out different selections according to the size of reaction chamber 600 and material.In RF heating, the supporting seat 110 of graphite is by radio-frequency coil by induction coupling heating, and this heat form often adopts in large-scale reaction chamber 600, but system is too complicated usually.In order to avoid the complicacy of system, in slightly little reaction chamber 600, usually adopt infrared radiation heating mode, the heat energy that halogen tungsten lamp produces is converted into infrared energy, and the supporting seat 110 of graphite absorbs this radiating capacity and transformed backheat energy.In resistance heating manner, by the heating of resistance wire, and then realize the heating to supporting seat 110.
Described heating unit 120 can also be integrated in described supporting seat 110, and it is known for those skilled in the art, therefore does not repeat them here.
Described refrigerating unit 200 has cooling channel, in order to pass into cooling gas or cooling liqs.Particularly, described refrigerating unit 200 can adopt cooling by water, also can adopt air-cooled cooling, and the concrete structure of its correspondence is known for those skilled in the art, therefore does not repeat them here.By the temperature of controlled cooling model device 200 in the present embodiment, two diffusers can be made to have different temperature change value, thus make the temperature of two diffusers different; In addition, refrigerating unit 200 also can make spray assemblies be in lower temperature, extends the work-ing life of spray assemblies.
Described CVD device can also comprise: rotary drive unit (not shown), described rotary drive unit rotates in the deposition process of described chemical vapor deposition unit for driving described pedestal 100 or spray assemblies, thus make thin film deposition evenly, preferably, described rotary drive unit drives described pedestal 100 to rotate.
Refer again to shown in Fig. 3, the gas diffusion plate that in the present embodiment, the first diffuser 300 is, its plate body that can be formed in one.Second diffuser 400 comprises multiple gas distribution pipeline 410 be arranged in parallel, gas distribution pipeline 410 is provided with multiple second pore (not shown), the position of the first not corresponding with gas distribution pipeline 410 diffuser 300 is also provided with multiple first pore (not shown).
Described spray assemblies can also comprise one or more first inlet pipe (not shown), described first inlet pipe runs through described refrigerating unit 200 and connects described first diffuser 300, described first gas enters described first diffuser 300 from described first inlet pipe, and enters reaction zone from the first pore of the first diffuser 300.
Described spray assemblies can also comprise at least one second inlet pipe running through refrigerating unit 200 and the first diffuser 300, at least one second inlet pipe described is connected with described gas distribution pipeline 410, at least one second inlet pipe described can be connected on the device of same storage second gas, described second gas enters gas distribution pipeline 410 from the second inlet pipe, and enters reaction zone from the second pore gas distribution pipeline 410.The shape and size of each described gas distribution pipeline 410 can be identical, also can be different.Optionally, described spray assemblies also comprises multiple second gas inlet pipe, and multiple gas inlet pipe is connected respectively with described multiple gas distribution pipeline 410 respectively.
Preferably, described first pore and the second pore are arranged on the first diffuser 300 and gas distribution pipeline 410 respectively equably, thus the first gas and the second gas are evenly distributed above pedestal 100, ensure that the homogeneity of thin film deposition.
The shape of distance piece 700 described in the present embodiment is identical with the shape of multiple described gas distribution pipeline 410, namely distance piece 700 is also multiple, is provided with a distance piece 700 identical with described first diffuser 300 size between each gas distribution pipeline 410 with described first diffuser 300.First diffuser 300 and the second diffuser 400 can further be connected by described distance piece 700, and namely described distance piece 700 contacts the first diffuser 300 and the second diffuser 400 simultaneously.Preferably, described gas distribution pipeline 410 and distance piece 700 are arranged on the below of the first diffuser 300 equably, thus make the first gas and the second gas and vapor permeation evenly.
The total amount of the first gas needed for the flow rate of the first gas, the flow rate of the second gas and reaction of the concrete number of described first pore and the second pore and size and the second gas determines.
Optionally, described first diffuser 300 can also be circular propagation dish; Described second diffuser 400 can also be annular diffuser tube; Described first diffuser 300 and described second diffuser 400 also can be Polygons etc., and it should not limit the scope of the invention at this.
Embodiment two
Fig. 4 is the structural representation of embodiment of the present invention CVD device, and Fig. 5 is the structural representation obtained along BB' direction in Fig. 4.Shown in Fig. 4 and Fig. 5, the difference of the present embodiment and embodiment one is: described first diffuser 300 is circular gas diffusion plate, described second diffuser 400 comprises some gas distribution pipelines 410 and air-guide disk 420 with some second pores, described gas distribution pipeline 410 is long strip shape, and described air-guide disk 420 is circular.Described spray assemblies also comprises the second gas inlet pipe; Described second gas inlet pipe passes the center of refrigerating unit 200 and the first diffuser 300; A distance piece 700 is provided with between described each gas distribution pipeline 410 and described first diffuser 300, described second gas successively by after the second gas inlet pipe, air-guide disk 420, gas distribution pipeline 410 and the second pore to described reaction zone, described heating unit 120 is in heat-processed, and described first diffuser 300 has different temperature from described second diffuser 400.
The size of described gas distribution pipeline 410 can be identical, also can be different.Preferably, described gas distribution pipeline 410 measure-alike, and described gas distribution pipeline 410 is evenly distributed in below the first diffuser 300, mixes with can ensureing the first gas and the second gas uniform like this.
Preferably, described first pore is evenly arranged on the first diffuser 300, described second pore is evenly arranged on described gas distribution pipeline 410, so also can make the first gas and the mixing of the second gas uniform, finally make the homogeneity of deposit film on substrate 500.
Optionally, described first diffuser 300 can also be rectangular gas diffusion plate; Described gas distribution pipeline 410 can in fan-shaped; Described first diffuser 300 and described gas distribution pipeline 410 also can be Polygons, and it should not limit the scope of the invention at this.
In the present embodiment by second gas inlet pipe and air-guide disk 420 by the second gas transmission to each gas distribution pipeline 410, because described air-guide disk 420 is to the shock absorption of the second gas entered from described inlet pipe, second gas can be assigned to uniformly in each gas distribution pipeline 410 after the buffering of air-guide disk 420, thus ensure that the homogeneity of the second gas of ejection from gas distribution pipeline 410.
Embodiment three
Fig. 6 is the structural representation of embodiment of the present invention CVD device, and Fig. 7 is the structural representation obtained along CC' direction in Fig. 6.Shown in Fig. 6 and Fig. 7, the difference of the present embodiment and embodiment one is: the gas distribution pipeline 410 in described second diffuser 400 and described distance piece 700 are embedded in described first diffuser 300, the one side in described gas distribution pipeline 410 orientating reaction district is provided with multiple second pore, described first diffuser 300 orientating reaction district and not corresponding with gas distribution pipeline 410 position is provided with multiple first pore, described heating unit 120 is in heat-processed, described first diffuser 300 has different temperature from described second diffuser 400.
Preferably, described gas distribution pipeline 410 is evenly distributed in described first diffuser 300, to make the first gas mix with the second gas uniform, finally makes the even of deposit film on substrate 500.
Second diffuser 400 and distance piece 700 described in the present embodiment are all embedded in described first diffuser 300, thus make the relatively simple for structure of whole device, save space.
Embodiment four
Fig. 8 is the structural representation of embodiment of the present invention CVD device, and Fig. 9 is the structural representation of spray assemblies upper surface in Fig. 8, and Figure 10 is the structural representation of spray assemblies lower surface in Fig. 8.Shown in Fig. 8, Fig. 9 and Figure 10, the difference of the present embodiment and embodiment three is: described first diffuser 300 is circular diffusion disc, described diffusion disc has upper surface and the lower surface relative with described upper surface, described upper surface is close to described refrigerating unit 200, described upper surface is provided with the first inlet mouth 310 and gaseous diffusion cell 320, and described first inlet mouth connects described spreading grooves 320; Described lower surface is provided with some first pore (not shown)s, and described first pore is communicated with described gaseous diffusion cell 320 through described diffusion disc; Described first gas enters described reaction zone via described first inlet mouth 310, gaseous diffusion cell 320 and described first pore successively; Described second diffuser 400 comprises air-guide disk 450 and some gas service pipess 430; Described spray assemblies also comprises the second induction trunk 440, and described second induction trunk 440 runs through the center of described diffusion disc and is connected with described air-guide disk 450; Described gas service pipes 430 is provided with some second pore (not shown)s, one end of described gas service pipes 430 is communicated with described air-guide disk 450, and described distance piece 700 is arranged between gas service pipes 430 and described first diffuser 300; Described second gas enters described reaction zone via described second induction trunk 440, air-guide disk 450, gas service pipes 430 and described second pore successively.
Particularly, described gaseous diffusion cell 320 has at least one the first spreading grooves 321 and multiple second spreading grooves 322, described first spreading grooves 321 annularly arranging in week along described diffusion disc, described second spreading grooves 322 is arranged along the radial direction of described diffusion disc, and described first spreading grooves 321 is communicated with described second spreading grooves 322.First gas flows to described second spreading grooves 322 by described first spreading grooves 321.Preferably, the first pore described in the present embodiment is evenly arranged in described second spreading grooves 322, is assigned to described reaction zone to make described first gas uniform.
For simplicity, described in the present embodiment, the second gaseous diffusion cell 322 is 6.The number of described second gaseous diffusion cell 322 is more than or equal to 3 and is less than or equal to 100, and preferably, the number of described second gaseous diffusion cell 322 is more than or equal to 10 and is less than or equal to 50.
Described first inlet mouth 310 can be one or more.Preferably, shown in Fig. 8 and Fig. 9, described first inlet mouth 310 is set to two, is separately positioned on the relative both sides of described diffusion disc, now both made the relatively simple for structure of the first diffuser 300, and entered while the first gas uniform can be made in described gaseous diffusion cell 320.
Described first inlet mouth 310 is arranged in described first spreading grooves 321, and in the second spreading grooves 322 described in described adjacent two and between described first spreading grooves 321 UNICOM's point, thus make the first gas entering into the first spreading grooves 321 enter described second spreading grooves 322 by the first spreading grooves 321 again after buffering, thus the first gas made distributed uniform in each second gaseous diffusion cell 322.
Preferably, the shape of described gas service pipes 430 is fan-shaped, and the second pore is evenly arranged on described gas service pipes 430, injects described reaction zone to make described second gas uniform.
The length of described each gas service pipes 430 can be equal, also can be unequal.Preferably, shown in Figure 10, described each gas service pipes 430 is isometric, and radially evenly arranges around described air-guide disk 450, can make full use of space like this, and makes described second gas uniform discharged to described reaction zone.
Further, shown in Figure 10, the length of described gas service pipes 430 equals the radius of described diffusion disc and the difference of described air-guide disk 450 radius.
In the present embodiment, the second diffuser 400 and distance piece 700 are all embedded in the first diffuser 300, thus make described spray assemblies compact construction, are conducive to the volume reducing described CVD device.
Described second diffuser 400 can also be arranged on the below of described first diffuser 300, namely first of described first diffuser 300 give vent to anger face and pedestal 100 bearing surface between the first vertical range be greater than second of described second diffuser 400 give vent to anger face and pedestal 100 bearing surface between the second vertical range, now between described gas service pipes 430 and described diffusion disc by described distance piece 700 interval.
It should be noted that, the shape of described first diffuser 300 can also be rectangle; The shape of described gas service pipes 430 can also be long strip shape; The shape of described first diffuser 300 and gas service pipes 430 can also be Polygons, and it should not limit the scope of the invention at this.
Spray assemblies in above embodiment includes two diffusers, by directly arranging distance piece at two diffusers, and make the heat-conduction coefficient of distance piece be less than the heat-conduction coefficient of the diffuser of side disposed thereon, and make the temperature of two diffusers different.It should be noted that, spray assemblies can also comprise the diffuser of more than three and three, similarly, by by refrigerating unit and the stacked setting of part or all of diffuser, and distance piece is set between adjacent diffuser, the heat-conduction coefficient of distance piece is less than the heat-conduction coefficient of the diffuser of side disposed thereon, and the temperature of part or all of diffuser can be made equally different.
Disclose as above with preferred embodiment although the present invention is own, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (28)
1. a chemical vapor deposition unit, comprise: reaction chamber, refrigerating unit, the spray assemblies being positioned at described reaction chamber top and the pedestal be oppositely arranged with described spray assemblies, described pedestal has heating unit, described spray assemblies comprises the first diffuser and the second diffuser, for respectively by the first gas and the second gas transmission to the reaction zone between pedestal and spray assemblies; It is characterized in that, also comprise: be arranged on the distance piece between described first diffuser and described second diffuser, described refrigerating unit, described first diffuser, described distance piece and described second diffuser are cascading, the heat-conduction coefficient of described distance piece is less than the heat-conduction coefficient of described first diffuser, in described heating unit heats process, described first diffuser has different temperature from described second diffuser.
2. chemical vapor deposition unit as claimed in claim 1, it is characterized in that, the heat-conduction coefficient of described first diffuser equals the heat-conduction coefficient of described second diffuser.
3. chemical vapor deposition unit as claimed in claim 2, is characterized in that, described first diffuser and be the material comprising graphite or silicon carbide with the material of described second diffuser, and the material composition of described distance piece comprises steel.
4. chemical vapor deposition unit as claimed in claim 1, it is characterized in that, the heat-conduction coefficient of described first diffuser is greater than the heat-conduction coefficient of described second diffuser.
5. chemical vapor deposition unit as claimed in claim 4, it is characterized in that, the heat-conduction coefficient of described distance piece is more than or equal to the heat-conduction coefficient of described second diffuser.
6. the chemical vapor deposition unit as described in claim 4 or 5, is characterized in that, the material of described first diffuser comprises graphite or silicon carbide, and the material composition of described second diffuser comprises steel.
7. chemical vapor deposition unit as claimed in claim 1, it is characterized in that, the heat emissivity coefficient of described first diffuser is less than the heat emissivity coefficient of described second diffuser.
8. chemical vapor deposition unit as claimed in claim 1, is characterized in that, described first gas comprise in reacting precursor, carrier gas, sweeping gas one or more.
9. chemical vapor deposition unit as claimed in claim 1, is characterized in that, described second gas comprise in reacting precursor, carrier gas, sweeping gas one or more.
10. chemical vapor deposition unit as claimed in claim 1, it is characterized in that, described first diffuser is for transmitting III metal organic source, and described second diffuser is for transmitting V race hydride source.
11. chemical vapor deposition units as claimed in claim 10, it is characterized in that, described III metal organic source comprises Ga (CH
3)
3, In (CH
3)
3, Al (CH
3)
3, Ga (C
2h
5)
3one or more in gas.
12. chemical vapor deposition units as claimed in claim 10, is characterized in that, the hydrogenation of described V race
Thing source comprises NH
3, PH
3, AsH
3one or more in gas.
13. chemical vapor deposition units as claimed in claim 10, is characterized in that, described heating unit is in heat-processed, and the temperature of described first diffuser is lower than the temperature of described second diffuser.
14. chemical vapor deposition units as claimed in claim 13, it is characterized in that, the temperature head between described first diffuser and described second diffuser is more than or equal to 100 DEG C and is less than or equal to 600 DEG C.
15. chemical vapor deposition units as claimed in claim 14, it is characterized in that, the temperature of described first diffuser is more than or equal to 35 DEG C and is less than or equal to 600 DEG C, and the temperature of described second diffuser is more than or equal to 135 DEG C and is less than or equal to 800 DEG C.
16. chemical vapor deposition units as claimed in claim 1, is characterized in that, also comprise: rotary drive unit, and described rotary drive unit rotates in the deposition process of described chemical vapor deposition unit for driving described pedestal or spray assemblies.
17. chemical vapor deposition units as claimed in claim 1, it is characterized in that, described second diffuser comprises some gas distribution pipelines, gas distribution pipeline described in each has some second pores, distance piece described at least partly and gas distribution pipeline are all embedded among described first diffuser, and described gas distribution pipeline exposes described second pore and discharges from described second pore to make the second gas to described reaction zone.
18. chemical vapor deposition units as claimed in claim 1, is characterized in that, the plate body that described first diffuser is formed in one.
19. chemical vapor deposition units as claimed in claim 1, it is characterized in that, described refrigerating unit has cooling channel, in order to pass into cooling gas or cooling liqs.
20. chemical vapor deposition units as claimed in claim 1, it is characterized in that, described first diffuser is diffusion disc, described diffusion disc has upper surface and the lower surface relative with described upper surface, described upper surface is close to described refrigerating unit, described upper surface is provided with the first inlet mouth and gaseous diffusion cell, and described lower surface is provided with some first pores; Described first gas enters described reaction zone via described first inlet mouth, gaseous diffusion cell and described first pore successively.
21. chemical vapor deposition units as claimed in claim 20, it is characterized in that, described gaseous diffusion cell has at least one first spreading grooves and multiple second spreading grooves, described first spreading grooves annularly arranging in week along described diffusion disc, described second spreading grooves is arranged along the radial direction of described diffusion disc, described second spreading grooves connects described first spreading grooves, and the first gas flows into described second spreading grooves by described first spreading grooves, and described first pore connects described second spreading grooves.
22. chemical vapor deposition units as claimed in claim 20, it is characterized in that, described first inlet mouth is set to two, is separately positioned on the relative both sides of described diffusion disc.
23. chemical vapor deposition units as claimed in claim 21, is characterized in that, arbitrary described first inlet mouth is arranged in described first spreading grooves, and described in adjacent two between second spreading grooves.
24. chemical vapor deposition units as claimed in claim 20, it is characterized in that, described second diffuser comprises air-guide disk and some gas service pipess; Described spray assemblies also comprises the second induction trunk, and described second induction trunk runs through the center of described diffusion disc and is connected with described air-guide disk; Described gas service pipes is provided with some second pores, one end of described gas service pipes is communicated with described air-guide disk; Described second gas enters described reaction zone via described second induction trunk, air-guide disk, gas service pipes and described second pore successively.
25. chemical vapor deposition units as claimed in claim 24, it is characterized in that, described each gas service pipes is isometric, and radially evenly arranges around described air-guide disk.
26. chemical vapor deposition units as claimed in claim 25, is characterized in that, the length of described gas service pipes equals the difference of described diffusion disc radius and described air-guide disk radius.
27. chemical vapor deposition units as claimed in claim 1, it is characterized in that, described chemical vapor deposition unit is MOCVD device, low-pressure chemical vapor deposition device, plasma CVD device or apparatus for atomic layer deposition.
28. chemical vapor deposition units as claimed in claim 1, it is characterized in that, the thickness of described distance piece is more than or equal to 0.1mm and is less than or equal to 2mm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5624498A (en) * | 1993-12-22 | 1997-04-29 | Samsung Electronics Co., Ltd. | Showerhead for a gas supplying apparatus |
| US20080199614A1 (en) * | 2007-02-15 | 2008-08-21 | Promos Technologies Inc. | Method for improving atomic layer deposition performance and apparatus thereof |
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| JP5026373B2 (en) * | 2008-09-04 | 2012-09-12 | シャープ株式会社 | Vapor growth apparatus and vapor growth method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5624498A (en) * | 1993-12-22 | 1997-04-29 | Samsung Electronics Co., Ltd. | Showerhead for a gas supplying apparatus |
| US20080199614A1 (en) * | 2007-02-15 | 2008-08-21 | Promos Technologies Inc. | Method for improving atomic layer deposition performance and apparatus thereof |
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Effective date of registration: 20190723 Address after: Building B, Building 4, 3255 Sixian Road, Songjiang District, Shanghai, 201620 Patentee after: Ideal semiconductor equipment (Shanghai) Co., Ltd. Address before: 201203 Pudong New Area Zhangjiang Road, Shanghai, No. 1 Curie Patentee before: Ideal Energy Equipment (Shanghai) Ltd. |
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Address after: Room 402, building 3, 3255 Sixian Road, Songjiang District, Shanghai, 201602 Patentee after: Ideal semiconductor equipment (Shanghai) Co., Ltd Address before: Building B, Building 4, 3255 Sixian Road, Songjiang District, Shanghai, 201620 Patentee before: LIXIANG JINGYAN SEMICONDUCTOR EQUIPMENT (SHANGHAI) Co.,Ltd. |