CN103014651A - Thin-film solar cell annealing device, and preparation method of copper indium gallium selenide thin-film cell absorption layer and copper zinc tin sulfide thin-film cell absorption layer - Google Patents
Thin-film solar cell annealing device, and preparation method of copper indium gallium selenide thin-film cell absorption layer and copper zinc tin sulfide thin-film cell absorption layer Download PDFInfo
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Abstract
A thin-film solar cell annealing device is used for selenizing or vulcanizing a metal film prefabrication layer on a substrate, and comprises an annealing furnace, a substrate rack and a first heating lamp tube, wherein the annealing furnace adopts a hollow structure; a sealed annealing cavity is formed inside the annealing furnace; the substrate rack is arranged on one side wall of the annealing cavity; the substrate can be loaded on the substrate rack; one end of the first heating lamp tube is arranged on one side wall of the annealing cavity; the first heating lamp tube is positioned on one side of the substrate provided with the metal film prefabrication layer; the first heating lamp tube and the substrate are arranged at an interval; a plane positioned with the first heating lamp tube and a plane positioned with the substrate rack are parallel to each other; and the first heating lamp tube and the substrate rack can conduct relative movement. In the thin-film solar cell annealing device, heat given out from the first heating lamp tube is directly radiated to the surface of the substrate, so that the fast heating capability is improved. Meanwhile, the invention further provides a preparation method of a copper indium gallium selenide thin-film cell absorption layer and a copper zinc tin sulfide thin-film cell absorption layer.
Description
Technical field
The present invention relates to the thin-film solar cells technology of preparing, particularly relate to the preparation method of a kind of thin-film solar cells annealing device, copper indium gallium selenide film battery and copper-zinc-tin-sulfur film battery obsorbing layer.
Background technology
Thin-film solar cells comprises copper indium gallium selenide film battery and copper-zinc-tin-sulfur film battery etc.Copper indium gallium selenide film battery is a kind of new green power that has high-level efficiency and low-cost advantage concurrently, and its photovoltaic efficiency of conversion surpasses 20% in the laboratory.Compare with existing silica-based photovoltaic solar cell, the scale operation meeting of copper indium gallium selenide film battery brings larger cost advantage.
The copper-zinc-tin-sulfur film battery is the new forms of energy with larger potentiality just under study for action, and its advantage is that the earth mineral products abundance of the required various elements of starting material is high, is easy to obtain, thereby can further reduces cost.
The critical process of making copper indium gallium selenide film battery is preparation copper-indium-galliun-selenium light absorbing zone, in scale operation, generally adopts sputtering method.A kind of specific practice of sputtering method comprises: at first adopt magnetron sputtering method to prepare the metallic film preformed layer, difference is copper, indium, the gallium of alternating sputtering acquisition multilayered structure repeatedly, then evaporation one deck selenium on the metallic film preformed layer, obtain substrate, again substrate is carried out high temperature annealing and generate CIGS thin-film.It is higher that the range request temperature is crossed in selenizing, and relatively good with the crystalline quality that guarantees CIGS thin-film, crystal grain is larger.
Copper indium gallium selenide film battery is similar with making, the copper-zinc-tin-sulfur film battery also need to be on the metallic film preformed layer evaporation one deck sulphur, obtain substrate, again substrate is carried out high temperature annealing and generates copper-zinc-tin-sulfur film.
In traditional thin-film solar cells annealing device, treat that the substrate of selenizing or sulfuration places in the graphite, a plurality of heating fluorescent tubes are distributed in the outside surface of graphite.But because need passing through graphite, its heat be passed on the substrate, the intensification scarce capacity of whole thin-film solar cells annealing device, thus cause annealing efficiency not high.
Summary of the invention
Based on this, be necessary the thin-film solar cells annealing device that provides a kind of ability of being rapidly heated stronger.
A kind of thin-film solar cells annealing device is used for on-chip metallic film preformed layer is carried out selenizing or sulfuration, comprising:
Annealing furnace is hollow structure, and its inside is airtight anneal chamber;
Substrate frame is arranged on the described anneal chamber sidewall, and described substrate can be loaded on the described substrate frame;
The first heating fluorescent tube, the one end is arranged on the described anneal chamber sidewall, described the first heating fluorescent tube is positioned at the side that described substrate is provided with the metallic film preformed layer, described the first heating fluorescent tube and described substrate space, and described the first heating fluorescent tube and described substrate frame place plane parallel can be movable relatively between described the first heating fluorescent tube and the described substrate frame.
Among embodiment, the interval between described the first heating fluorescent tube and described substrate is less than 5 millimeters therein.
Among embodiment, described the first heating fluorescent tube one end is fixed on the described anneal chamber sidewall therein; Described thin-film solar cells annealing device also comprises horizontal slide rail and transmission mechanism, described horizontal slide rail is fixed on the described anneal chamber sidewall, described transmission mechanism is mounted slidably in described horizontal slide rail, described substrate frame is arranged on the described transmission mechanism, and described transmission mechanism can drive described substrate frame and move in the horizontal direction.
Among embodiment, described transmission mechanism drives described substrate frame and moves at described horizontal slide rail with the speed of 0.3 mm/second therein.
Among embodiment, described substrate frame is fixed on the described anneal chamber sidewall therein; Described thin-film solar cells annealing device also comprises horizontal slide rail and transmission mechanism, described horizontal slide rail is fixed on the described anneal chamber sidewall, described transmission mechanism is mounted slidably in described horizontal slide rail, one end of described the first heating fluorescent tube is arranged on the described transmission mechanism, and described transmission mechanism can drive described the first heating fluorescent tube and move in the horizontal direction.
Therein among embodiment, also comprise the second heating fluorescent tube, the one end is arranged on the described anneal chamber sidewall, described the second heating fluorescent tube is positioned at described substrate away from a side of described the first heating fluorescent tube, described the second heating fluorescent tube and described substrate space, and described the second heating fluorescent tube and described substrate frame place plane parallel.
Among embodiment, described the second heating fluorescent tube is a plurality of therein, and described a plurality of the second heating fluorescent tubes evenly distribute on the same level face.
Among embodiment, described the first heating fluorescent tube is halogen lamp therein, and its power is 1kW.
In the said film solar cell annealing device, the first heating fluorescent tube is arranged in the anneal chamber.Than traditional thin-film solar cells annealing device, the more close substrate of the first heating fluorescent tube.The first heat direct radiation of sending of heating fluorescent tube is to substrate surface, thereby increased the ability that is rapidly heated of thin-film solar cells annealing device.
In addition, also be necessary to provide a kind of preparation method of copper indium gallium selenide film battery absorption layer.
A kind of copper indium gallium selenide film battery absorption layer preparation method may further comprise the steps:
The substrate that deposits dorsum electrode layer is provided;
Adopt vapour deposition method or sputtering method, the metallic film preformed layer that deposited copper, indium, gallium form on described dorsum electrode layer;
Evaporation one deck selenium obtains substrate on described metallic film preformed layer;
Provide claim 1 to the described thin-film solar cells annealing device of claim 7 any one, with described substrate load on substrate frame;
Make relative uniform motion between described the first heating fluorescent tube and described substrate, and make described the first heating fluorescent tube be provided with the end motion of a side of metallic film preformed layer from described substrate to the other end, with to described substrate surface homogeneous heating, make the copper indium gallium selenide film battery absorption layer at described dorsum electrode layer.
Above-mentioned copper indium gallium selenide film battery absorption layer preparation method, the more close substrate of the first heating fluorescent tube.The heat direct radiation that the first heating fluorescent tube sends has satisfied the demand that is rapidly heated in the annealing process to substrate surface.In addition, relative uniform motion between the first heating fluorescent tube and substrate frame makes the substrate surface thermally equivalent, and selenylation reaction is also more even, finally makes the better quality of the absorption layer of copper indium gallium selenide film battery.
In addition, also be necessary to provide a kind of preparation method of copper indium gallium selenide film battery absorption layer.
A kind of copper-zinc-tin-sulfur film battery obsorbing layer preparation method may further comprise the steps:
The substrate that deposits dorsum electrode layer is provided;
Adopt vapour deposition method or sputtering method, the metallic film preformed layer that deposited copper, zinc, tin form on described dorsum electrode layer;
Evaporation one deck sulphur obtains substrate on described metallic film preformed layer;
Provide claim 1 to the described thin-film solar cells annealing device of claim 7 any one, with described substrate load on substrate frame;
Make relative uniform motion between described the first heating fluorescent tube and described substrate, and make described the first heating fluorescent tube be provided with the end motion of a side of metallic film preformed layer from described substrate to the other end, with to described substrate surface homogeneous heating, make the copper-zinc-tin-sulfur film battery obsorbing layer at described dorsum electrode layer.
Above-mentioned copper-zinc-tin-sulfur film battery obsorbing layer preparation method, the more close substrate of the first heating fluorescent tube.The heat direct radiation that the first heating fluorescent tube sends has satisfied the demand that is rapidly heated in the annealing process to substrate surface.In addition, relative uniform motion between the first heating fluorescent tube and substrate frame makes the substrate surface thermally equivalent, and vulcanization reaction is also more even, finally makes the better quality of the absorption layer of copper-zinc-tin-sulfur film battery.
Description of drawings
Fig. 1 is the structure iron of the thin-film solar cells annealing device of preferred embodiment of the present invention;
Fig. 2 is the structure iron of another angle of thin-film solar cells annealing device shown in Figure 1;
Fig. 3 is the structure iron of the thin-film solar cells annealing device of another embodiment;
Fig. 4 is the structure iron of the thin-film solar cells annealing device of an again embodiment;
Fig. 5 is the copper indium gallium selenide film battery absorption layer preparation method's of preferred embodiment of the present invention schema;
Fig. 6 is the structure iron of the substrate of an embodiment;
Fig. 7 is the concrete structure figure of the copper indium gallium selenide film battery of an embodiment;
Fig. 8 is the copper-zinc-tin-sulfur film battery obsorbing layer preparation method's of preferred embodiment of the present invention schema;
Fig. 9 is the structure iron of the substrate of another embodiment;
Figure 10 is the concrete structure figure of the copper-zinc-tin-sulfur film battery of an embodiment.
Embodiment
For the ease of understanding the present invention, the below is described more fully the present invention with reference to relevant drawings.Provided preferred embodiments of the present invention in the accompanying drawing.But the present invention can realize with many different forms, be not limited to embodiment described herein.On the contrary, provide the purpose of these embodiments be make to disclosure of the present invention understand more comprehensively thorough.
Need to prove that when element is called as " being fixed in " another element, can directly can there be element placed in the middle in it on another element or also.When an element is considered to " connection " another element, it can be to be directly connected to another element or may to have simultaneously centering elements.Term as used herein " vertical ", " level ", " left side ", " right side " and similar statement do not represent it is unique embodiment just for illustrative purposes.
Unless otherwise defined, the employed all technology of this paper are identical with the implication that belongs to the common understanding of those skilled in the art of the present invention with scientific terminology.Employed term is not intended to be restriction the present invention just in order to describe the purpose of concrete embodiment in specification sheets of the present invention herein.Term as used herein " and/or " comprise one or more relevant Listed Items arbitrarily with all combinations.
See also Fig. 1, the thin-film solar cells annealing device 100 in the preferred embodiment of the present invention is used for the metallic film preformed layer on the substrate 200 is carried out selenizing or sulfuration.Thin-film solar cells annealing device 100 comprises annealing furnace 110, substrate frame 130 and the first heating fluorescent tube 150.
See also Fig. 2, the first heating fluorescent tube 150 is halogen lamp, and its power is 1kW.One end of the first heating fluorescent tube 150 is arranged on anneal chamber 112 sidewalls, and the first heating fluorescent tube 150 is positioned at the side that substrate 200 is provided with the metallic film preformed layer.The first heating fluorescent tube 150 and substrate 200 spaces, and the first heating fluorescent tube 150 and substrate frame 130 place plane parallel.Can be movable relatively between the first heating fluorescent tube 150 and the substrate frame 130.
Specifically in the present embodiment, the first heating fluorescent tube 150 1 ends are fixed on anneal chamber 112 sidewalls.Thin-film solar cells annealing device 100 also comprises horizontal slide rail (not shown) and transmission mechanism (not shown).Horizontal slide rail is fixed on anneal chamber 112 sidewalls.Transmission mechanism is mounted slidably in horizontal slide rail, and substrate frame 130 is arranged on the transmission mechanism.Transmission mechanism can drive substrate frame 130 and move in the horizontal direction, can be movable relatively thereby make between the first heating fluorescent tube 150 and the substrate frame 130.
The interval that the first heating fluorescent tube 150 and substrate are 200 is less than 5 millimeters.When carrying out annealing process, transmission mechanism drives substrate frame 130 and moves at horizontal slide rail with the speed of 0.3 mm/second, make the first heating fluorescent tube 150 be provided with the end motion of a side of metallic film preformed layer from substrate 200 to the other end, so that substrate 200 surface uniforms are heated.The power that is appreciated that the first heating fluorescent tube 150 is not limited to 1kW, decides according to actual process.The interval that the first heating fluorescent tube 150 and substrate is 200 and the speed of substrate frame 130 motions also can change because of the first change of the factors such as efficient of heating power, required selenizing or the sulfuration of fluorescent tube 150.
It is pointed out that in other embodiments, substrate frame 130 is fixed on anneal chamber 112 sidewalls.One end of the first heating fluorescent tube 150 is arranged on the transmission mechanism.Transmission mechanism can drive the first heating fluorescent tube 150 and move in the horizontal direction, can be movable relatively thereby make between the first heating fluorescent tube 150 and the substrate frame 130.Said structure need not mobile substrate 200, can prevent that substrate 200 from coming off from substrate frame 130 because of mobile.
In the said film solar cell annealing device 100, the first heating fluorescent tube 150 is arranged in the anneal chamber 112.Than traditional thin-film solar cells annealing device, the first heating fluorescent tube 150 more close substrates 200.The first heat direct radiation of sending of heating fluorescent tube 150 is to substrate 200 surfaces, thereby increased the ability that is rapidly heated of thin-film solar cells annealing device 100.
In addition, can be movable relatively between the first heating fluorescent tube 150 and the substrate frame 130, substrate 200 surface uniforms are heated, selenizing or vulcanization reaction are also more even, finally make the absorption layer better quality of thin-film solar cells.Compare with traditional thin-film solar cells annealing device simultaneously, only need to adopt one first heating fluorescent tube 150 just can guarantee the homogeneity that substrate 200 surfaces are heated, saved the energy.
See also Fig. 3, thin-film solar cells annealing device 100 also comprises the second heating fluorescent tube 170.One end of the second heating fluorescent tube 170 is arranged on anneal chamber 112 sidewalls, and the second heating fluorescent tube 170 is positioned at substrate 200 away from a side of the first heating fluorescent tube 150.The second heating fluorescent tube 170 and substrate 200 spaces, and the second heating fluorescent tube 170 and substrate frame 130 place plane parallel.See also Fig. 4, the second heating fluorescent tube 170 can be a plurality of, and a plurality of the second heating fluorescent tube 170 evenly distributes on the same level face.
Because substrate 200 is laminate structure, when being heated, one side temperature fast rise produces stress between the laminate structure, may cause breaking away from the first substrate that heats fluorescent tube 150 in the substrate 200.Away from a side of the first heating fluorescent tube 150 the second heating fluorescent tube 170, the second heating fluorescent tubes 170 and first are set at substrate 200 and heat fluorescent tube 150 and together substrate 200 is heated, improved the homogeneity of temperature distribution, prevent that effectively substrate from breaking.
In the various embodiments described above, can also be that substrate base is with respect to all heating fluorescent tube fast reciprocating motions, so that the temperature of substrate integral body evenly rises simultaneously.
The present invention also provides a kind of copper indium gallium selenide film battery absorption layer preparation method, and it adopts said film solar cell annealing device 100.
See also Fig. 5, the copper indium gallium selenide film battery absorption layer preparation method in the preferred embodiment of the present invention may further comprise the steps:
Step S510 provides the substrate that deposits dorsum electrode layer.See also Fig. 6, a substrate 610 is provided, substrate 610 materials can select calcium soda glass, flexible stainless steel or polyimide plastic to make, and can deposit one deck molybdenum as dorsum electrode layer 620 on substrate 610 surfaces.
Step S520 adopts vapour deposition method or sputtering method, the metallic film preformed layer that deposited copper, indium, gallium form on dorsum electrode layer.Specifically in the present embodiment, use sputtering method, for example magnetron sputtering method utilizes the target of argon ion bombardment respective metal in vacuum chamber, and is deposited on the dorsum electrode layer 620, forms the metallic film preformed layer 630 of copper, indium, gallium composition.
In other embodiments, also can adopt vapour deposition method, copper source, indium source, gallium source etc. are heated, and form steam, in dorsum electrode layer 620 depositions, form the metallic film preformed layer 630 of copper, indium, gallium composition.
Step S530, evaporation one deck selenium obtains substrate on the metallic film preformed layer.Adopt vapour deposition method, the heating selenium source, and be deposited on the metallic film preformed layer 630, form selenium layer 640.Substrate 610, dorsum electrode layer 620, metallic film preformed layer 630 and selenium layer 640 stack gradually, and form substrate 200.
Step S540, with substrate load on substrate frame.Please again consult Fig. 1 to Fig. 4, substrate 200 is loaded on the substrate frame 130.
Step S550, make relative uniform motion between the first heating fluorescent tube and substrate, and make the first heating fluorescent tube is provided with the metallic film preformed layer from substrate a end motion of a side to the other end, with to the substrate surface homogeneous heating, make the copper indium gallium selenide film battery absorption layer at dorsum electrode layer.The first heating fluorescent tube 150 is provided with metallic film preformed layer 630 from substrate 200 a end motion of a side is to the other end, and substrate 200 surface uniforms are heated.See also Fig. 7, metallic film preformed layer 630 and selenium layer 640 reactions, metallic film preformed layer 630 is made the absorption layer 650 of copper indium gallium selenide film battery by evenly selenizing at dorsum electrode layer 620.
Above-mentioned copper indium gallium selenide film battery absorption layer preparation method, the first heating fluorescent tube 150 more close substrates 200.The heat direct radiation that the first heating fluorescent tube 150 sends has satisfied the demand that is rapidly heated in the annealing process to substrate 200 surfaces.In addition, relative uniform motion between the first heating fluorescent tube 150 and substrate frame 130 is heated substrate 200 surface uniforms, and selenylation reaction is also more even, finally makes the better quality of the absorption layer of copper indium gallium selenide film battery.
In addition, the present invention also provides a kind of copper-zinc-tin-sulfur film battery obsorbing layer preparation method, and it adopts said film solar cell annealing device 100.See also Fig. 8, the copper-zinc-tin-sulfur film battery obsorbing layer preparation method in the preferred embodiment of the present invention may further comprise the steps:
Step S810 provides the substrate that deposits dorsum electrode layer.See also Fig. 9, a substrate 910 is provided, substrate 910 materials can select calcium soda glass, flexible stainless steel or polyimide plastic to make, and can deposit one deck molybdenum as dorsum electrode layer 920 on substrate 910 surfaces.
Step S820 adopts vapour deposition method or sputtering method, the metallic film preformed layer that deposited copper, zinc, tin form on dorsum electrode layer.Specifically in the present embodiment, use sputtering method, for example magnetron sputtering method utilizes the target of argon ion bombardment respective metal in vacuum chamber, and is deposited on the dorsum electrode layer 920, forms the metallic film preformed layer 930 of copper, zinc, tin composition.
In other embodiments, also can adopt vapour deposition method, copper source, zinc source, Xi Yuan etc. are heated, and form steam, in dorsum electrode layer 920 depositions, form the metallic film preformed layer 930 of copper, zinc, tin composition.
Step S830, evaporation one deck sulphur obtains substrate on the metallic film preformed layer.Adopt vapour deposition method, heating sulphur source, and be deposited on the metallic film preformed layer 930, form sulphur layer 940.Substrate 910, dorsum electrode layer 920, metallic film preformed layer 930 and sulphur layer 940 stack gradually, and form substrate 200.
Step S840, with substrate load on substrate frame.Please again consult Fig. 1 to Fig. 4, substrate 200 is loaded on the substrate frame 130.
Step S850, make relative uniform motion between the first heating fluorescent tube and substrate, and make the first heating fluorescent tube is provided with the metallic film preformed layer from substrate a end motion of a side to the other end, with to the substrate surface homogeneous heating, make the copper-zinc-tin-sulfur film battery obsorbing layer at dorsum electrode layer.The first heating fluorescent tube 150 is provided with metallic film preformed layer 930 from substrate 200 a end motion of a side is to the other end, and substrate 200 surface uniforms are heated.See also Figure 10, metallic film preformed layer 930 and 940 reaction of sulphur layer, metallic film preformed layer 930 is evenly vulcanized, and makes the absorption layer 950 of copper-zinc-tin-sulfur film battery at dorsum electrode layer 920.
Above-mentioned copper-zinc-tin-sulfur film battery obsorbing layer preparation method, the first heating fluorescent tube 150 more close substrates 200.The heat direct radiation that the first heating fluorescent tube 150 sends has satisfied the demand that is rapidly heated in the annealing process to substrate 200 surfaces.In addition, relative uniform motion between the first heating fluorescent tube 150 and substrate frame 130 is heated substrate 200 surface uniforms, and vulcanization reaction is also more even, finally makes the better quality of the absorption layer of copper-zinc-tin-sulfur film battery.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a thin-film solar cells annealing device is used for on-chip metallic film preformed layer is carried out selenizing or sulfuration, it is characterized in that, comprising:
Annealing furnace is hollow structure, and its inside is airtight anneal chamber;
Substrate frame is arranged on the described anneal chamber sidewall, and described substrate can be loaded on the described substrate frame;
The first heating fluorescent tube, the one end is arranged on the described anneal chamber sidewall, described the first heating fluorescent tube is positioned at the side that described substrate is provided with the metallic film preformed layer, described the first heating fluorescent tube and described substrate space, and described the first heating fluorescent tube and described substrate frame place plane parallel can be movable relatively between described the first heating fluorescent tube and the described substrate frame.
2. thin-film solar cells annealing device according to claim 1 is characterized in that, the interval between described the first heating fluorescent tube and described substrate is less than 5 millimeters.
3. thin-film solar cells annealing device according to claim 1 is characterized in that, described the first heating fluorescent tube one end is fixed on the described anneal chamber sidewall; Described thin-film solar cells annealing device also comprises horizontal slide rail and transmission mechanism, described horizontal slide rail is fixed on the described anneal chamber sidewall, described transmission mechanism is mounted slidably in described horizontal slide rail, described substrate frame is arranged on the described transmission mechanism, and described transmission mechanism can drive described substrate frame and move in the horizontal direction.
4. thin-film solar cells annealing device according to claim 3 is characterized in that, described transmission mechanism drives described substrate frame and moves at described horizontal slide rail with the speed of 0.3 mm/second.
5. thin-film solar cells annealing device according to claim 1 is characterized in that, described substrate frame is fixed on the described anneal chamber sidewall; Described thin-film solar cells annealing device also comprises horizontal slide rail and transmission mechanism, described horizontal slide rail is fixed on the described anneal chamber sidewall, described transmission mechanism is mounted slidably in described horizontal slide rail, one end of described the first heating fluorescent tube is arranged on the described transmission mechanism, and described transmission mechanism can drive described the first heating fluorescent tube and move in the horizontal direction.
6. thin-film solar cells annealing device according to claim 1, it is characterized in that, also comprise the second heating fluorescent tube, the one end is arranged on the described anneal chamber sidewall, described the second heating fluorescent tube is positioned at described substrate away from a side of described the first heating fluorescent tube, described the second heating fluorescent tube and described substrate space, and described the second heating fluorescent tube and described substrate frame place plane parallel.
7. thin-film solar cells annealing device according to claim 6 is characterized in that, described the second heating fluorescent tube is a plurality of, and described a plurality of the second heating fluorescent tube evenly distributes on the same level face.
8. thin-film solar cells annealing device according to claim 1 is characterized in that, described the first heating fluorescent tube is halogen lamp, and its power is 1kW.
9. a copper indium gallium selenide film battery absorption layer preparation method is characterized in that, may further comprise the steps:
The substrate that deposits dorsum electrode layer is provided;
Adopt vapour deposition method or sputtering method, the metallic film preformed layer that deposited copper, indium, gallium form on described dorsum electrode layer;
Evaporation one deck selenium obtains substrate on described metallic film preformed layer;
Provide claim 1 to the described thin-film solar cells annealing device of claim 7 any one, with described substrate load on substrate frame;
Make relative uniform motion between described the first heating fluorescent tube and described substrate, and make described the first heating fluorescent tube be provided with the end motion of a side of metallic film preformed layer from described substrate to the other end, with to described substrate surface homogeneous heating, make the copper indium gallium selenide film battery absorption layer at described dorsum electrode layer.
10. a copper-zinc-tin-sulfur film battery obsorbing layer preparation method is characterized in that, may further comprise the steps:
The substrate that deposits dorsum electrode layer is provided;
Adopt vapour deposition method or sputtering method, the metallic film preformed layer that deposited copper, zinc, tin form on described dorsum electrode layer;
Evaporation one deck sulphur obtains substrate on described metallic film preformed layer;
Provide claim 1 to the described thin-film solar cells annealing device of claim 7 any one, with described substrate load on substrate frame;
Make relative uniform motion between described the first heating fluorescent tube and described substrate, and make described the first heating fluorescent tube be provided with the end motion of a side of metallic film preformed layer from described substrate to the other end, with to described substrate surface homogeneous heating, make the copper-zinc-tin-sulfur film battery obsorbing layer at described dorsum electrode layer.
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| CN116494441A (en) * | 2023-06-29 | 2023-07-28 | 德州晶华药用玻璃有限公司 | Annealing grate sulfur system for eliminating vulcanization defect of medium boron silicon molded injection bottle |
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| CN116494441A (en) * | 2023-06-29 | 2023-07-28 | 德州晶华药用玻璃有限公司 | Annealing grate sulfur system for eliminating vulcanization defect of medium boron silicon molded injection bottle |
| CN116494441B (en) * | 2023-06-29 | 2023-08-29 | 德州晶华药用玻璃有限公司 | Annealing grate sulfur system for eliminating vulcanization defect of medium boron silicon molded injection bottle |
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