CN103014625B - Method for preparing tetragonal-phase room-temperature multi-ferroic material BiFeO3 - Google Patents
Method for preparing tetragonal-phase room-temperature multi-ferroic material BiFeO3 Download PDFInfo
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- CN103014625B CN103014625B CN201210584892.5A CN201210584892A CN103014625B CN 103014625 B CN103014625 B CN 103014625B CN 201210584892 A CN201210584892 A CN 201210584892A CN 103014625 B CN103014625 B CN 103014625B
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- tetragonal
- phase
- bifeo
- bifeo3
- buffer layer
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Abstract
The invention discloses a method for preparing a tetragonal-phase room-temperature multi-ferroic material BiFeO3, which comprises the following specific steps of: on a (001) LaAlO3 monocrystalline substrate, depositing a layer of NdAlO3 thin film as a buffer layer, and depositing a BiFeO3 thin film to prepare the BiFeO3 in a single-phase tetragonal-phase structure. The method disclosed by the invention effectively avoids phase separation caused by lattice relaxation due to lattice mismatch between the LaAlO3 and other substrates and the tetragonal-phase BiFeO3, and prepares a single-phase tetragonal-phase BiFeO3 thin film.
Description
Technical field
The present invention relates to one and prepare Tetragonal room temperature multi-ferroic material BiFeO
3technique, belong to the synthetic technical field of inorganic nano material.
Background technology
Society is the society of information explosion, and more less energy-consumption, more speed and more highdensity information storage become and become more and more important.For magnetic storage, need to change ferromagnetic layer magnetic moment orientation by larger electric current, increase the energy consumption in complicacy and the operating process of device architecture, and affected the raising of storage density.Ferroelectricity (anti-ferroelectricity), the iron such as ferromegnetism (antiferromagnetism, ferrimagnetism) coexist in multi-ferroic material simultaneously, by the mutual regulation and control that realize between electricity and magnetic, thereby in spintronics, have important application.Regulate and control magnetic moment by extra electric field instead of electric current, will reduce greatly energy consumption.
BiFeO
3there is ferroelectric Curie point (~ 1100K) and antiferromagnetic Néel point (~ 640K) higher than room temperature, thereby receive much concern in multi-ferroic material.BiFeO
3(the saturated polarization of the monocrystal thin films of extension and block reaches 60 μ C/cm to have very excellent ferroelectric properties
2), its magnetic is the anti-ferromagnetic structure of G type, between the magnetic moment of the Fe ion of adjacent arranged anti-parallel, has small inclination angle, it is the spirane structure of about 62nm that while magnetic moment also has the cycle.BiFeO
3film has multiple crystalline structure, wherein at LaAlO
3on substrate, can obtain the structure of Tetragonal, Tetragonal BiFeO
3owing to thering is large c/a lattice parameter ratio, thereby be considered to have larger polarization.But due to Tetragonal BiFeO
3with LaAlO
3the mismatch of substrate lattice constant, is greater than 40nm at thickness, BiFeO
3film cannot keep single-phase tetragonal phase structure.
Summary of the invention
Technical problem: the object of this invention is to provide one and prepare Tetragonal room temperature multi-ferroic material BiFeO
3method, the method is by utilizing NdAlO
3as buffer layer, by buffer layer at (001) LaAlO
3lattice relaxation on substrate, farthest mates Tetragonal BiFeO
3lattice parameter, thereby prepared single-phase Tetragonal BiFeO at larger thickness range
3film.
Technical scheme: one of the present invention is prepared Tetragonal room temperature multi-ferroic material BiFeO
3method comprise the following steps:
1), at (001) LaAlO
3on substrate, utilize pulse laser sediment method one deck NdAlO that first grows
3buffer layer;
2), at NdAlO
3on buffer layer, continue again to utilize pulse laser sediment method growth BiFeO
3film, can obtain the BiFeO of tetragonal phase structure
3film.
Described growth of Nd AlO
3, BiFeO
3film, can also adopt magnetron sputtering, MBE grown preparation technology.
Adjust pulsed laser energy and umber of pulse, the parameter of the power of magnetron sputtering and the thin film preparation process of thin film deposition time, adjusts buffer layer NdAlO
3thickness, preparation larger thickness single-phase Tetragonal BiFeO
3.
The present invention is first at (001) LaAlO
3on substrate, deposit one deck NdAlO
3as buffer layer, due to NdAlO
3lattice parameter
be less than LaAlO
3lattice parameter
adjust NdAlO
3the thickness of buffer layer, by lattice relaxation, thereby can adjust NdAlO
3lattice parameter.Tetragonal BiFeO
3lattice parameter between LaAlO
3and NdAlO
3lattice parameter between, pass through NdAlO
3the adjustment of the thickness of buffer layer, can mate NdAlO to greatest extent
3with Tetragonal BiFeO
3lattice parameter.
Beneficial effect: with respect to other expensive substrate, it is simple that this technique has method, low price, lattice parameter has larger adjustment elasticity, can obtain the single-phase Tetragonal BiFeO of larger thickness
3film, has stronger propagation and employment and is worth.
(1) utilize buffer layer instead of special crystal substrates, technique is simple, easy handling, and cheap.
(2) utilize the lattice relaxation of buffer layer under different thickness, can farthest mate buffer layer and Tetragonal BiFeO
3lattice parameter, can obtain single-phase tetragonal phase structure at larger thickness range.
Brief description of the drawings
Fig. 1 is for utilizing pulsed laser deposition technique, at (001) LaAlO
3on substrate, first deposit one deck NdAlO
3buffer layer, then deposits the BiFeO that one deck 160nm is thick thereon
3the XRD figure of film.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is described in further detail.Should be appreciated that specific embodiment described herein is only in order to explain the present invention, and be not used in restriction invention.
The object of the present invention is to provide a kind of Tetragonal room temperature multi-ferroic material BiFeO
3preparation technology, this preparation method is first at (001) LaAlO
3on substrate, first prepare one deck NdAlO
3buffer layer, at NdAlO
3on buffer layer, deposit BiFeO
3film can obtain the BiFeO of the single-phase Tetragonal of larger thickness range
3film.
In embodiments of the present invention, the deposition of film can adopt pulsed laser deposition technique, magnetron sputtering, the various thin film preparation process such as molecular beam epitaxy technique.
In embodiments of the present invention, NdAlO
3the thickness of buffer layer can be adjusted by changing thin film preparation process parameter, and the preparation of sull can, at different underlayer temperatures, be prepared under the conditions such as different oxygen partial pressures, and under different oxygen partial pressures anneal.
Below in conjunction with drawings and the specific embodiments, application principle of the present invention is further described.
1), first utilize pulsed laser deposition technique, at (001) LaAlO
3on substrate, first deposit one deck NdAlO
3buffer layer, selects laser energy 300mJ, frequency 5Hz, umber of pulse 1000,880 ° of C of underlayer temperature, oxygen partial pressure 10Pa, target-substrate distance 5cm;
2), then continue to utilize pulsed laser deposition technique, at NdAlO
3biFeO grows on buffer layer
3film, selects laser energy 300mJ, frequency 10Hz, umber of pulse 2000,750 ° of C of underlayer temperature, oxygen partial pressure 7Pa, target-substrate distance 5cm;
3), gained film sample is at 550 ° of C of underlayer temperature, under 1 normal atmosphere of oxygen partial pressure, is incubated half an hour, then cooling naturally.Gained BiFeO
3the about 160nm of film thickness, its structure XRD figure as shown in Figure 1, from scheming, we can find out BiFeO
3film shows single-phase tetragonal phase structure.
Example of the present invention provides a kind of Tetragonal room temperature multi-ferroic material BiFeO
3preparation technology, this technique is by (001) LaAlO
3in single crystalline substrate, first deposit one deck NdAlO
3thereby film is prepared single-phase Tetragonal BiFeO as buffer layer
3film.The preparation of film can be passed through pulsed laser deposition, magnetron sputtering, and the various film preparing technologies such as molecular beam epitaxy, and can adjust underlayer temperature, the various parameters such as oxygen pneumatic are further improved the crystalline structure of film.NdAlO
3the thickness of buffer layer can be by changing the adjustment of thin film preparation process parameter, the laser energy of for example pulsed laser deposition and umber of pulse, time and the energy etc. of magnetron sputtering, utilize the lattice relaxation of buffer layer under different thickness, can farthest mate buffer layer and Tetragonal BiFeO
3lattice parameter, can obtain single-phase tetragonal phase structure at larger thickness range.This technology utilization buffer layer instead of special monocrystal chip, technique is simple, and easy handling, and cheap can obtain at larger thickness range the BiFeO of single-phase tetragonal phase structure
3, practical, there is stronger propagation and employment and be worth.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (1)
1. prepare Tetragonal room temperature multi-ferroic material BiFeO for one kind
3method, it is characterized in that the method comprises the following steps:
1), at (001) LaAlO
3on substrate, utilize pulse laser sediment method, magnetron sputtering or MBE grown preparation technology one deck NdAlO that first grows
3buffer layer;
2), at NdAlO
3on buffer layer, continue again to utilize pulse laser sediment method, magnetron sputtering or the MBE grown preparation technology BiFeO that grows
3film, can obtain the BiFeO of tetragonal phase structure
3film.
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| CN103014625B true CN103014625B (en) | 2014-08-13 |
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| CN104103752B (en) * | 2013-04-15 | 2017-03-29 | 北京师范大学 | A kind of preparation method and applications of the oxide film material with shape memory effect |
| CN103540904B (en) * | 2013-10-15 | 2015-11-18 | 中国科学院半导体研究所 | Preparation T-phase BiFeO 3the method of film |
| CN106124575B (en) * | 2016-08-08 | 2019-12-24 | 苏州科技大学 | NO (nitric oxide)2Sensor and preparation method thereof |
| CN109208069A (en) * | 2018-07-18 | 2019-01-15 | 华南师范大学 | A method of induction bismuth ferrite thin film phase transformation |
| CN114107901B (en) * | 2020-08-28 | 2023-06-13 | 中国科学院半导体研究所 | Epitaxial preparation of tetragonal phase BiFeO on semiconductor ZnO 3 Method and system for film |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1905955A (en) * | 2004-01-16 | 2007-01-31 | 美国超导公司 | Oxide films with nanodot flux pinning centers |
| CN101376600A (en) * | 2008-09-26 | 2009-03-04 | 清华大学 | Stack ferro-electricity /magnetic multiferrou magnetoelectric compound film with conductive oxide as buffer layer and preparation thereof |
| CN101388335A (en) * | 2008-10-30 | 2009-03-18 | 上海大学 | Preparation for ferroelectric material of quartz/lanthanum nickelate/bismuth ferrite-lead titanate |
| CN102176472A (en) * | 2011-02-21 | 2011-09-07 | 华东师范大学 | Bulk effect solar cell material and preparation method thereof |
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| JP5599203B2 (en) * | 2010-03-02 | 2014-10-01 | キヤノン株式会社 | Piezoelectric thin film, piezoelectric element, method for manufacturing piezoelectric element, liquid discharge head, and ultrasonic motor |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1905955A (en) * | 2004-01-16 | 2007-01-31 | 美国超导公司 | Oxide films with nanodot flux pinning centers |
| CN101376600A (en) * | 2008-09-26 | 2009-03-04 | 清华大学 | Stack ferro-electricity /magnetic multiferrou magnetoelectric compound film with conductive oxide as buffer layer and preparation thereof |
| CN101388335A (en) * | 2008-10-30 | 2009-03-18 | 上海大学 | Preparation for ferroelectric material of quartz/lanthanum nickelate/bismuth ferrite-lead titanate |
| CN102176472A (en) * | 2011-02-21 | 2011-09-07 | 华东师范大学 | Bulk effect solar cell material and preparation method thereof |
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