CN103000782B - 发光二极管封装结构 - Google Patents
发光二极管封装结构 Download PDFInfo
- Publication number
- CN103000782B CN103000782B CN201110269169.3A CN201110269169A CN103000782B CN 103000782 B CN103000782 B CN 103000782B CN 201110269169 A CN201110269169 A CN 201110269169A CN 103000782 B CN103000782 B CN 103000782B
- Authority
- CN
- China
- Prior art keywords
- electrode
- light
- emitting diode
- backlight unit
- diode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000004020 conductor Substances 0.000 claims abstract description 12
- 230000005611 electricity Effects 0.000 claims description 10
- 238000000407 epitaxy Methods 0.000 claims description 2
- 239000007943 implant Substances 0.000 claims description 2
- 230000000087 stabilizing effect Effects 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 description 8
- 238000004020 luminiscence type Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000009975 flexible effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Planar Illumination Modules (AREA)
Abstract
Description
Claims (10)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110269169.3A CN103000782B (zh) | 2011-09-13 | 2011-09-13 | 发光二极管封装结构 |
TW100132924A TWI472011B (zh) | 2011-09-13 | 2011-09-14 | 發光二極體封裝結構 |
US13/430,707 US8536593B2 (en) | 2011-09-13 | 2012-03-27 | LED device having two LED dies separated by a dam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110269169.3A CN103000782B (zh) | 2011-09-13 | 2011-09-13 | 发光二极管封装结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103000782A CN103000782A (zh) | 2013-03-27 |
CN103000782B true CN103000782B (zh) | 2016-09-07 |
Family
ID=47829036
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110269169.3A Active CN103000782B (zh) | 2011-09-13 | 2011-09-13 | 发光二极管封装结构 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8536593B2 (zh) |
CN (1) | CN103000782B (zh) |
TW (1) | TWI472011B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI626395B (zh) | 2013-06-11 | 2018-06-11 | 晶元光電股份有限公司 | 發光裝置 |
CN103794701B (zh) * | 2014-01-26 | 2017-01-18 | 广东晶科电子股份有限公司 | 一种led支架及其led器件 |
CN103872218B (zh) * | 2014-03-18 | 2016-09-28 | 深圳市瑞丰光电子股份有限公司 | Led支架及led发光体 |
CN105529325A (zh) * | 2016-01-15 | 2016-04-27 | 珠海格力电器股份有限公司 | 一种双色温led封装结构 |
CN107859890B (zh) * | 2017-12-07 | 2024-04-12 | 东莞市莱硕光电科技有限公司 | 一种多极型全方位发光led光源及其支架 |
CN111949151B (zh) * | 2019-05-17 | 2023-11-14 | 欣兴电子股份有限公司 | 触控显示面板及其制造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR200373718Y1 (ko) * | 2004-09-20 | 2005-01-21 | 주식회사 티씨오 | 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도발광다이오드 |
JP4715422B2 (ja) * | 2005-09-27 | 2011-07-06 | 日亜化学工業株式会社 | 発光装置 |
TWM302123U (en) * | 2006-06-13 | 2006-12-01 | Lighthouse Technology Co Ltd | The stand structure of light-emitting diode |
JP5205724B2 (ja) * | 2006-08-04 | 2013-06-05 | 日亜化学工業株式会社 | 発光装置 |
US8026533B2 (en) * | 2007-07-19 | 2011-09-27 | Nichia Corporation | Light emitting device and method of manufacturing the same |
KR101503499B1 (ko) * | 2008-09-11 | 2015-03-18 | 서울반도체 주식회사 | 멀티칩 발광 다이오드 패키지 |
KR100982994B1 (ko) * | 2008-10-15 | 2010-09-17 | 삼성엘이디 주식회사 | Led 패키지 모듈 |
KR101039994B1 (ko) * | 2010-05-24 | 2011-06-09 | 엘지이노텍 주식회사 | 발광소자 및 이를 구비한 라이트 유닛 |
CN102270725A (zh) * | 2010-06-01 | 2011-12-07 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
USD658606S1 (en) * | 2010-09-29 | 2012-05-01 | Kabushiki Kaisha Toshiba | Portion of a light-emitting diode |
JP2012142426A (ja) * | 2010-12-28 | 2012-07-26 | Toshiba Corp | Ledパッケージ及びその製造方法 |
CN102956627B (zh) * | 2011-08-30 | 2015-04-29 | 展晶科技(深圳)有限公司 | Led封装结构 |
-
2011
- 2011-09-13 CN CN201110269169.3A patent/CN103000782B/zh active Active
- 2011-09-14 TW TW100132924A patent/TWI472011B/zh not_active IP Right Cessation
-
2012
- 2012-03-27 US US13/430,707 patent/US8536593B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW201312726A (zh) | 2013-03-16 |
US20130062636A1 (en) | 2013-03-14 |
US8536593B2 (en) | 2013-09-17 |
TWI472011B (zh) | 2015-02-01 |
CN103000782A (zh) | 2013-03-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201021 Address after: Qiuzhen building, Southeast campus, Changshu Institute of technology, No.99 Hushan Road, Changshu Southeast Economic Development Zone, Suzhou City, Jiangsu Province Patentee after: Changshu southeast high tech Venture Service Co., Ltd Address before: 518109, Shenzhen, Guangdong, Baoan District province Longhua Street tenth Pine Industrial Zone, No. two, East Ring Road, No. two Patentee before: ZHANJING Technology (Shenzhen) Co.,Ltd. Patentee before: Rongchuang Energy Technology Co.,Ltd. |