CN102998855A - 像素单元、薄膜晶体管阵列基板及液晶显示器 - Google Patents
像素单元、薄膜晶体管阵列基板及液晶显示器 Download PDFInfo
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Abstract
本发明涉及液晶显示技术领域,特别涉及一种像素单元、TFT阵列基板及液晶显示器,用于减轻液晶显示器在显示画面时的色差,改善液晶显示器的显示画面品质。本发明公开了一种像素单元,包括:具有同层设置且相互绝缘的主动区像素电极和被动区像素电极,与所述主动区像素电极电连接的薄膜晶体管TFT开关,以及与主动区像素电极异层设置且电连接的耦合电极,且耦合电极与被动区像素电极具有形成耦合电容的交叠区域。本发明同时还公开一种TFT阵列基板,包括具有上述技术特征的像素单元;本发明同时还公开一种ADS模式液晶显示器,包括具有上述技术特征的TFT阵列基板。
Description
技术领域
本发明涉及液晶显示技术领域,特别涉及一种像素单元、薄膜晶体管阵列基板及液晶显示器。
背景技术
目前,高级超维场转换(Advanced super Dimension Switch,以下简称ADS)模式液晶显示器因具备广视角、高穿透率、低色差等优点而得到广泛的应用。ADS模式液晶显示器是同一平面内狭缝电极边缘产生的电场以及狭缝电极层与板状电极层之间产生的电场形成多维电场,使液晶盒内的狭缝电极间以及狭缝电极正上方所有取向液晶分子都产生旋转,从而提高液晶工作效率并增大透光效率。
其中,ADS模式液晶显示器中的薄膜晶体管(Thin Film Transistor,以下简称TFT)阵列基板一般包括:衬底基板,以及在衬底基板上呈阵列状分布的像素单元;其中,如图1所示,每一个像素单元包括:分别与衬底基板上栅线10和数据线20电连接到的TFT,通过过孔60与TFT的源极50电连接的像素电极30;具体地,像素电极30为具有一定倾斜角度的狭缝电极。TFT阵列基板还包括与像素电极形成电场的公共电极,像素电极30与公共电极之间形成的电场强度的变化控制着液晶分子的偏转程度。
ADS模式液晶显示器在工作时,液晶分子在电压驱动下旋转;不过,每一个像素单元内的液晶分子只有一种偏转角度,在不同的观察视角下,由于液晶的各向异性,ADS模式液晶显示器的亮度存在差异,即液晶显示器在显示画面时存在色差,影响液晶显示器的显示画面品质。因此,如何减轻ADS模式液晶显示器在显示画面时的色差,改善ADS模式液晶显示器的显示画面品质成为本领域技术人员需要解决的问题。
发明内容
本发明的目的在于提供一种像素单元、TFT阵列基板及液晶显示器,用于减轻液晶显示器在显示画面时的色差,改善液晶显示器的显示画面品质。
为了实现上述技术方案,本发明提供以下技术方案:
一种像素单元,包括:具有同层设置且相互绝缘的主动区像素电极和被动区像素电极,与所述主动区像素电极电连接的TFT开关,以及与所述主动区像素电极异层设置且电连接的耦合电极,且所述耦合电极与所述被动区像素电极具有形成耦合电容的交叠区域。
优选地,在上述像素单元中,所述主动区像素电极和所述被动区像素电极分别为一组对称分布的狭缝电极。
优选地,在上述像素单元中,所述狭缝电极的延伸方向与液晶初始取向方向的夹角为5°~20°。
优选地,在上述像素单元中,所述狭缝电极的长度方向与液晶初始取向方向的夹角为70°~85°。
较佳地,在上述像素单元中,所述主动区像素电极的电极图形和所述被动区像素电极的电极图形的面积比为1:1~1:9。
本发明同时还提供了一种TFT阵列基板,包括:
衬底基板;
以及在所述衬底基板上呈阵列状分布,具有上述技术特征的像素单元。
优选地,在上述TFT阵列基板中,所述像素单元中的耦合电极与所述衬底基板上的栅线或数据线同层设置。
本发明同时还提供了一种液晶显示器,包括具有上述技术特征的TFT阵列基板。
在本发明提供的像素单元中,包括:具有同层设置且相互绝缘的主动区像素电极和被动区像素电极,与所述主动区像素电极电连接的TFT开关,以及与主动区像素电极异层设置且电连接的耦合电极,且耦合电极与被动区像素电极具有形成耦合电容的交叠区域。也就是说,像素单元中的像素电极包括同层设置的主动区像素电极和被动区像素电极,以及与像素电极异层设置的耦合电极;其中,主动区像素电极和被动区像素电极电学断开;与耦合电极电连接,耦合电极与被动区像素电极具有交叠的区域。
采用具有上述像素单元的TFT阵列基板的液晶显示器在工作时,当像素单元所在位置的栅线打开时,数据电压通过数据线与TFT充入主动区像素电极,主动区像素电极所对应的液晶分子受到电压驱动而偏转;被动区像素电极所对应的液晶分子的驱动电压由耦合电极与被动区像素电极产生的耦合电容提供,因被动区像素电极的电压由耦合电容提供,相对于施加在主动区像素电极上的电压具有一定的时间延迟,因此,每个像素单元所述对应的液晶分子具有两种偏转角度,在不同视角观察下,由于液晶取向的平均化效果,使液晶显示器的亮度差异减小,因此,与现有技术相比,减轻液晶显示器在显示画面时的色差,改善液晶显示器的显示画面品质。
附图说明
图1为现有技术中一种像素单元的结构示意图;
图2为本发明实施例提供的一种像素单元的结构示意图;
图3为图2中A-A方向的剖视图;
图4为本发明实施例提供的驱动一个像素单元的等效电路图。
附图标记:
1-衬底基板; 10、11-栅线; 20、21-数据线; 30-像素电极;
31-主动区像素电极; 32-被动区像素电极; 40、41-源极;
50、51-漏极; 60、61、62-过孔; 70-耦合电极。
具体实施方式
现有液晶显示器中TFT阵列基板的结构,限制了液晶显示器中的液晶分子在电压驱动下的偏转角度,使液晶分子在发生偏转时只有一种偏转角度,在不同的观察视角下,由于液晶的各向异性,液晶显示器的亮度存在差异,即液晶显示器在显示画面时存在色差,影响液晶显示器的显示画面品质。
有鉴于此,本发明提供了一种像素单元、TFT阵列基板及液晶显示器,每一个像素单元包括:具有同层设置且相互绝缘的主动区像素电极和被动区像素电极,与所述主动区像素电极电连接的薄膜晶体管TFT开关,以及与主动区像素电极异层设置且电连接的耦合电极,且所述耦合电极与所述被动区像素电极具有形成耦合电容的交叠区域。采用上述像素单元和TFT阵列基板的液晶显示器在工作时,液晶分子具有至少两种偏转角度,减轻了液晶显示器在显示画面时的色差,从而改善了液晶显示器的显示画面品质。
为了使本领域技术人员更好的理解本发明的技术方案,下面结合说明书附图对本发明实施例进行详细的描述。
如图2、图3所示,本发明实施例提供的一种像素单元,包括:具有同层设置且相互绝缘的主动区像素电极31和被动区像素电极32,与主动区像素电极31电连接的薄膜晶体管TFT开关,以及与主动区像素电极31异层设置且电连接的耦合电极70,且耦合电极70与被动区像素电极32具有形成耦合电容的交叠区域。
更具体地说,在本实施例提供的像素单元中,像素电极分为两个区域:主动区P1和被动区P2,并且主动区P1和被动区P2之间电学断开;其中,主动区像素电极31分布在主动区P1,并通过过孔61与TFT开关电连接,具体可与TFT的源极40或漏极50电连接;同时还通过过孔62与耦合电极70电连接;被动区像素电极32分布在被动区P2,并与耦合电极70一定面积的重叠区域,可以和耦合电极70形成耦合电容。
呈阵列状分布在TFT阵列基板中的上述像素单元的具体工作原理如下:
如图4所示,当第n行的栅线Gn打开后,第m列数据线Dm的数据电压可以通过薄膜晶体管T1充入主动区像素电极31,即主动区像素电极31的驱动电压由TFT提供,主动区像素电极31与TFT阵列基板上的公共电极形成液晶电容C1和存储电容C2,其中,液晶电容C1控制着主动区像素电极31所对应的液晶分子进行旋转,存储电容C2使液晶分子维持一定的偏转角度。被动区像素电极32与耦合电极70形成耦合电容,因耦合电极70与主动区像素电极31电连接,对主动区像素电极31施加电压,耦合电极70也会获得电压,从而通过耦合电容使被动区像素电极32获得驱动电压;过被动区像素电极32与公共电极形成液晶电容C3和存储电容C4,其中,液晶电容C3控制着被动区像素电极32所对应的液晶分子进行旋转,存储电容C4使液晶分子维持一定的偏转角度。值得一提的是,被动区像素电极32的电压是通过耦合电容得到的,因此,相对于主动区像素电极31的驱动电压具有一定的时间延迟,通过改变耦合电容的大小可以实现在主动区P1和被动区P2的像素电极的电压不同,也就是说,通过改变被动区像素电极32与耦合电极70的交叠面积,可以改变施加在被动区像素电极32的电压,使得施加在主动区像素电极31和被动区像素电极32不同,从而使每个像素单元内液晶分子具有2种偏转角度。
因此,当液晶显示器采用上述TFT阵列基板时,填充在液晶显示器中的液晶分子具有两种偏转角度,在不同视角观察下,由于液晶取向的平均化效果,可以减轻液晶显示器显示时的亮度差异,因此,与现有技术先比,减轻了液晶显示器的显示画面时的色差,从而改善液晶显示器的显示画面品质。
继续参见图2,为了进一步减轻液晶显示器的显示的色差,优选地,在上述像素单元中,主动区像素电极31和被动区像素电极32分别为一组对称分布的狭缝电极。具体地,在主动区P1和被动区P2中的电极图形分别分为对称的两个部分,其中,主动区像素电极31为一组具有一定倾斜角度对称分布的狭缝电极,被动区像素电极32为一组具有一定倾斜角度对称分布的狭缝电极;因此,当对主动区像素电极31施加电压时,主动区像素电极31所对应液晶分子具有两种偏转角度,被动区像素电极32对应的液晶分子也具有两种偏转角度,因施加在被动区像素电极32上的电压与施加在主动区像素电极31上的电压不同并有一定的时间延迟,每个像素单元所对应的液晶分子具有四种偏转角度,使得液晶分子的各向异性得到进一步的平均,从而进一步地减轻液晶显示器的显示画面时的色差,改善液晶显示器的显示画面品质。
上述主动区像素电极31和被动区像素电极32的狭缝电极分别具有一定倾斜角度,这个倾斜角度一般要结合像素设计及选用的液晶进行模拟,当每个像素单元所对应的液晶分子为正性液晶分子时,优选地,在上述像素单元中,狭缝电极的方向与液晶初始取向方向的夹角为5°~20°;或者说,当主动区像素电极31和被动区像素电极32的狭缝电极的延伸方向与液晶初始取向方向的夹角为5°~20°时,液晶显示器中的液晶分子只能采用正性液晶分子,液晶初始取向方向与取向层的有关,具体为本领域技术人员所熟知,这里就不详细描述了。
同理,当液晶显示器中的液晶分子为负性液晶分子时,优选地,所述狭缝电极的方向与液晶初始取向方向的夹角为70°~85°。
上述每个像素单元具有主动区像素电极31和被动区像素电极32,主动区像素电极31和被动区像素电极32电极图形的面积大小可以有多种形式,只要满足图4所示的耦合原理即可,即满足耦合电极70与被动区像素电极30可以产生耦合电容,较佳地,在上述像素单元中,主动区像素电极31的电极图形和被动区像素电极32的电极图形的面积比为1:1~1:9。
本发明同时还提供了一种TFT阵列基板,包括:衬底基板;以及在所述衬底基板上呈阵列状分布,具有上述技术特征的像素单元。
为了节省空间以及便于制作,优选地,上述像素单元中的耦合电极70与衬底基板1上的栅线或数据线同层设置。也就是说,在制作栅线或数据线时,制作耦合电极70,具体制作工艺流程与制作栅线或数据线的工艺流程相同,这里就不详细描述了。
本发明同时还提供了一种液晶显示器,包括具有上述技术特征的TFT阵列基板。当液晶显示器工作时,每个像素单元中,主动区像素电极31的驱动电压由TFT充入,主动区像素电极31与TFT阵列基板上的公共电极之间形成电场,驱动对应的液晶分子发生偏转;当对施加主动区像素电极31电压时,与主动区像素电极31电连接的耦合电极70也具有电压,通过与被动区像素电极32形成的耦合电容对被动区像素电极32施加电压,被动区像素电极32与TFT阵列基板上的公共电极之间形成电场,驱动对应的液晶分子发生偏转;因施加在被动区像素电极32的电压是由耦合电容产生的,因此,相对于施加在主动区像素电极31的电压具有一定的时间延迟,使得每个像素单元所对应的液晶分子具有至少两种偏转角度,即液晶显示器中的液晶分子具有至少两种偏转角度,在不同视角观察下,由于液晶取向的平均化效果,可以减轻液晶显示器显示时的亮度差异,因此,与现有技术先比,减轻了液晶显示器的显示画面时的色差,从而改善液晶显示器的显示画面品质。
综上所述,采用本发明提供的像素单元及TFT阵列基板,液晶显示器工作时,填充在液晶显示器中的液晶分子具有至少两种偏转角度,在不同视角观察下,由于液晶取向的平均化效果,可以减轻液晶显示器显示时的亮度差异,因此,与现有技术先比,减轻了液晶显示器的显示画面时的色差,从而改善液晶显示器的显示画面品质。
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。
Claims (8)
1.一种像素单元,其特征在于,包括:具有同层设置且相互绝缘的主动区像素电极和被动区像素电极,与所述主动区像素电极电连接的薄膜晶体管开关,以及与所述主动区像素电极异层设置且电连接的耦合电极,且所述耦合电极与所述被动区像素电极具有形成耦合电容的交叠区域。
2.如权利要求1所述的像素单元,其特征在于,所述主动区像素电极和所述被动区像素电极分别为一组对称分布的狭缝电极。
3.如权利要求2所述的像素单元,其特征在于,所述狭缝电极的方向与液晶初始取向方向的夹角为5°~20°。
4.如权利要求2所述的像素单元,其特征在于,所述狭缝电极的方向与液晶初始取向方向的夹角为70°~85°。
5.如权利要求1-4任一所述的像素单元,其特征在于,所述主动区像素电极的电极图形和所述被动区像素电极的电极图形的面积比为1∶1~1:9。
6.一种薄膜晶体管阵列基板,其特征在于,包括:
衬底基板;
以及在所述衬底基板上呈阵列状分布,如权利要求1-5任一所述的像素单元。
7.如权利要求6所述的薄膜晶体管阵列基板,其特征在于,所述像素单元中的耦合电极与所述衬底基板上的栅线或数据线同层设置。
8.一种液晶显示器,其特征在于,包括如权利要求6或7所述的薄膜晶体管阵列基板。
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