CN102998853B - Chock insulator matter and preparation method thereof, liquid crystal panel and display device - Google Patents
Chock insulator matter and preparation method thereof, liquid crystal panel and display device Download PDFInfo
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- CN102998853B CN102998853B CN201210581499.0A CN201210581499A CN102998853B CN 102998853 B CN102998853 B CN 102998853B CN 201210581499 A CN201210581499 A CN 201210581499A CN 102998853 B CN102998853 B CN 102998853B
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Abstract
The present invention relates to display field, disclose a kind of chock insulator matter and preparation method thereof, liquid crystal panel and display device, described chock insulator matter is column, and the cross sectional radius of its upper/lower terminal is greater than the cross sectional radius in the middle part of it.The present invention is set to the cross sectional radius be greater than in the middle part of it by the cross sectional radius of the upper/lower terminal by chock insulator matter, can ensure under the prerequisite not easily occurring the contact area that stress is concentrated between chock insulator matter and upper and lower substrate, counter stress disperses, eliminate the display defect of liquid crystal panel, and this kind of vibrational power flow of chock insulator matter realizes easily through wet-etching technique, preparation is simple.
Description
Technical field
The present invention relates to display field, particularly relate to a kind of chock insulator matter and preparation method thereof, liquid crystal panel and display device.
Background technology
Chock insulator matter is the important component part of liquid crystal panel, liquid crystal region can be formed by chock insulator matter, make independence between each liquid crystal region, be independent of each other, display effect can be improved like this, but chock insulator matter also brings some negative impacts simultaneously, between the upper substrate being supported on formation liquid crystal panel due to chock insulator matter and infrabasal plate, fulcrum place carries stress, this stress can cause the distortion of substrate, can make to show incompleteness.
Fig. 1 shows the structural representation of a kind of chock insulator matter of the prior art, and Fig. 1 a is the shape diagram of chock insulator matter in Fig. 1, and Fig. 1 b is the stress distribution schematic diagram in Fig. 1 on chock insulator matter xsect.Chock insulator matter 1 shown in figure is cylindrical spacer, its size is larger, the area of its each position xsect is identical, this kind of chock insulator matter 1 is larger with the contact area of the upper substrate of liquid crystal panel and the infrabasal plate 2 in illustrating, can stress concentration distribution be caused like this, in the area of whole contact, have identical stress, the distribution curve of stress 3 of orthoscopic as shown in Figure 1 b, this creates the terminal large-area concentrated stressed, easily cause the technical matterss such as the display defect of liquid crystal panel.
Based on the defect existing for above-mentioned large scale chock insulator matter, those skilled in the art take a kind of innovative approach, by reducing chock insulator matter and upper, the contact area of infrabasal plate, on increasing simultaneously, chock insulator matter number between infrabasal plate, counter stress disperses, like this can dispersive stress to a certain extent, as Fig. 2, shown in Fig. 2 a and Fig. 2 b, undersized chock insulator matter is also cylindrical spacer, the area of its each position xsect is also identical, large-sized chock insulator matter shown in Fig. 1 can be decomposed into the undersized chock insulator matter 1 shown in multiple Fig. 2, like this can by line between each undersized chock insulator matter 1, although undersized chock insulator matter 1 and infrabasal plate 2 contact area sum and large-sized identical, but stress can produce dispersion, decay is had at the stress at line place, curvilinear distribution curve of stress 3 as shown in figure 2b, like this can dispersive stress, eliminate the display defect of liquid crystal panel.But, the size of the chock insulator matter 1 shown in Fig. 2 is less, when forming this chock insulator matter 1 by photoetching process, permissible accuracy is high, the technological requirement made chock insulator matter 1 is high, and, contact area between chock insulator matter 1 and upper and lower substrate is little, also easily causes stress raisers, brings harmful effect to the display quality of liquid crystal panel.
Summary of the invention
(1) technical matters that will solve
The technical problem to be solved in the present invention how to realize the stress dispersion between chock insulator matter and upper and lower substrate, and can avoid the phenomenon of stress raisers.
(2) technical scheme
In order to solve the problems of the technologies described above, the invention provides a kind of chock insulator matter, described chock insulator matter is column, and the cross sectional radius of its upper/lower terminal is greater than the cross sectional radius in the middle part of it.
Wherein, cave in towards its central axis in the middle part of the sidewall of described chock insulator matter.
Wherein, described chock insulator matter is circle along the xsect of its each position of central axial direction.
Present invention also offers a kind of chock insulator matter preparation method, it comprises following process:
Substrate forms chock insulator matter material layer and photoresist layer successively, exposure-processed is carried out to photoresist layer, photoresist layer forms the photoetching agent pattern corresponding with chock insulator matter distributing position;
Adopting wet-etching technique to etch chock insulator matter material layer, by regulating etching liquid pressure to realize etching liquid concentration gradient in etching process, form cylindrical spacer, and the cross sectional radius of chock insulator matter upper/lower terminal being greater than the cross sectional radius in the middle part of it.
Wherein, the width 1-3 micron larger than the cross-sectional diameter of the upper end end face of described cylindrical spacer of the lines of described photoetching agent pattern is formed.
Wherein, described etching liquid is acid etching liquid, and etching temperature is 25-40 DEG C.
Present invention also offers a kind of liquid crystal panel, it comprises upper substrate, infrabasal plate and at least one above-mentioned chock insulator matter, and described chock insulator matter is between described upper substrate and infrabasal plate.
Invention further provides a kind of display device, it comprises above-mentioned liquid crystal panel.
(3) beneficial effect
Chock insulator matter that technique scheme provides and preparation method thereof, liquid crystal panel and display device, the cross sectional radius be greater than in the middle part of it is set to by the cross sectional radius of the upper/lower terminal by chock insulator matter, can ensure under the prerequisite not easily occurring the contact area that stress is concentrated between chock insulator matter and upper and lower substrate, counter stress disperses, eliminate the display defect of liquid crystal panel, and this kind of vibrational power flow of chock insulator matter realizes easily through wet-etching technique, preparation is simple.
Accompanying drawing explanation
Fig. 1 is the distribution schematic diagram of a kind of large-sized cylindrical spacer on liquid crystal panel in prior art;
Fig. 1 a is the shape diagram of chock insulator matter in Fig. 1;
Fig. 1 b is the stress distribution schematic diagram in Fig. 1 on chock insulator matter xsect;
Fig. 2 is the distribution schematic diagram of a kind of undersized cylindrical spacer on liquid crystal panel in prior art;
Fig. 2 a is the shape diagram of chock insulator matter in Fig. 2;
Fig. 2 b is the stress distribution schematic diagram in Fig. 2 on chock insulator matter xsect;
Fig. 3 is the distribution schematic diagram of chock insulator matter on liquid crystal panel in the embodiment of the present invention 1;
Fig. 3 a is the shape diagram of chock insulator matter in Fig. 3;
Fig. 3 b is the stress distribution schematic diagram in Fig. 3 on chock insulator matter xsect;
Fig. 4 to Fig. 9 is the preparation process figure of chock insulator matter in the embodiment of the present invention 2.
Wherein, 1: chock insulator matter; 2: infrabasal plate; 3: distribution curve of stress; 4: chock insulator matter material layer; 5: photoresist; 6: mask plate; 7: photoetching agent pattern.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples for illustration of the present invention, but are not used for limiting the scope of the invention.
Embodiment 1
Fig. 3 shows the distribution schematic diagram of the present embodiment chock insulator matter on liquid crystal panel, and Fig. 3 a is the concrete shape diagram of chock insulator matter in Fig. 3.With reference to diagram, the chock insulator matter 1 of the present embodiment is column, on it, the cross sectional radius at lower two ends is greater than the cross sectional radius in the middle part of it, when contacting with the infrabasal plate 2 in realizing chock insulator matter 1 and upper substrate and illustrating, incomplete same in contact area internal stress, stress distribution schematic diagram on chock insulator matter xsect as shown in Figure 3 b, when identical with substrate contacts area with chock insulator matter in prior art, the present embodiment chock insulator matter 1 can by stress dispersion, form curvilinear distribution curve of stress 3 as shown in figure 3b, the chock insulator matter 1 of this structure can avoid the phenomenon occurring stress raisers between chock insulator matter 1 and substrate, realize stress dispersion, eliminate the display defect of liquid crystal panel.
Particularly, the cross sectional radius at described chock insulator matter 1 two ends is greater than the structure of the cross sectional radius in the middle part of it, by realizing in the middle part of chock insulator matter 1 sidewall towards its central axis depression, preferably this depression can be set to circular arc depression, stress can be disperseed as far as possible equably; Further, in order to the preparation technology realizing this chock insulator matter 1 is simple, chock insulator matter 1 is set and is circle along the xsect of its each position of central axial direction, the formation of chock insulator matter 1 can be realized by the concentration controlling etching liquid in wet-etching technique comparatively easily.
In the present embodiment, on chock insulator matter 1, the radius R of lower two ends xsect is equal, namely chock insulator matter 1 for during liquid crystal panel with, contact area between infrabasal plate is equal, the span of R has respective change according to liquid crystal panel effective display area domain sizes size, when territory, display panels effective display area is larger, the value of R is corresponding bigger than normal, when territory, display panels effective display area is less, the value of R is corresponding less than normal, when to avoid that territory, display panels effective display area is comparatively large, R value is too small, stress concentrates in a less contact area, easily there is the phenomenon that stress is concentrated, also can avoid that territory, display panels effective display area is less and R value is excessive time chock insulator matter oversize, affect display quality of liquid crystal panel.
Described chock insulator matter 1 is between 0.2R ~ 0.3R along the cross sectional radius r of its central axial direction point midway, if r value is too small, then the support strength of chock insulator matter 1 is inadequate, if r value is excessive, then r and R relatively, stress dispersion DeGrain.
Embodiment 2
Present embodiments provide a kind of chock insulator matter preparation method, its detailed process, see Fig. 4 to Fig. 9, specifically describes as follows:
First, infrabasal plate 2 is formed chock insulator matter material layer 4 and photoresist layer 5 successively, sees Fig. 4;
Next, carry out exposure etching by means of mask plate 6 pairs of photoresist layers 5, recycling supersonic gas stream rinses, and photoresist layer 5 forms the photoetching agent pattern 7 corresponding with chock insulator matter distributing position, sees Fig. 5 and Fig. 6;
Then, adopting wet-etching technique to etch chock insulator matter material layer 4, by regulating etching liquid pressure to realize etching liquid concentration gradient in etching process, forming cylindrical spacer 1, and the cross sectional radius of chock insulator matter 1 upper/lower terminal is greater than the cross sectional radius in the middle part of it, sees Fig. 7 and Fig. 8;
Wherein, form the width 1-3 micron larger than the cross-sectional diameter of the upper end end face of cylindrical spacer 1 of the lines of photoetching agent pattern 7, the slit of shaping photoetching agent pattern 7 is utilized to carry out diffraction etching, the rich width of 1-3 micron, etching liquid can be spread at slit mouth diffraction, etching liquid concentration is slowly infiltrated with the form of ripple, thus carries out radian etching to chock insulator matter outer ring.Etching liquid preferred acidic etching liquid, etching temperature is 25-40 DEG C, and etching speed is constant speed, and by regulating etching liquid pressure to realize concentration gradient in etching process, chock insulator matter outer ring radian is regulated jointly by etching liquid concentration and slit width.
Finally, by photoresist lift off, obtain final chock insulator matter 1.
Embodiment 3
Present embodiments provide a kind of liquid crystal panel, comprise upper substrate, infrabasal plate and the chock insulator matter described at least one embodiment 1, described chock insulator matter is between described upper substrate and infrabasal plate, the upper end of chock insulator matter contacts with upper substrate, the lower end of chock insulator matter contacts with infrabasal plate, uses the liquid crystal panel that the chock insulator matter in embodiment 1 is formed, the stress dispersion between chock insulator matter and upper and lower substrate, not easily there is the phenomenon of stress concentration of local, the display quality of liquid crystal panel can be improved.
Embodiment 4
Present embodiments provide a kind of display device, this display device uses the liquid crystal panel in embodiment 3, and this display device can be product or the parts that Electronic Paper, oled panel, LCD TV, liquid crystal display, digital album (digital photo frame), mobile phone, panel computer etc. have any Presentation Function.
As can be seen from the above embodiments, the present invention is set to the cross sectional radius be greater than in the middle part of it by the cross sectional radius of the upper/lower terminal by chock insulator matter, can ensure under the prerequisite not easily occurring the contact area that stress is concentrated between chock insulator matter and upper and lower substrate, counter stress disperses, eliminate the display defect of liquid crystal panel, and this kind of vibrational power flow of chock insulator matter realizes easily through wet-etching technique, preparation is simple.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the technology of the present invention principle; can also make some improvement and replacement, these improve and replace and also should be considered as protection scope of the present invention.
Claims (8)
1. for a chock insulator matter for liquid crystal panel, it is characterized in that, described chock insulator matter is column, and the cross sectional radius R of its upper/lower terminal is greater than the cross sectional radius r in the middle part of it;
Wherein, the cross sectional radius r of described chock insulator matter centrally axis direction point midway is between 0.2R ~ 0.3R;
Described chock insulator matter centrally axis direction point midway place xsect is symmetrical.
2. chock insulator matter as claimed in claim 1, is characterized in that, cave in the middle part of the sidewall of described chock insulator matter towards its central axis.
3. chock insulator matter as claimed in claim 1, it is characterized in that, described chock insulator matter is circle along the xsect of its each position of central axial direction.
4. a chock insulator matter preparation method, is characterized in that, comprises following process:
Substrate forms chock insulator matter material layer and photoresist layer successively, exposure-processed is carried out to photoresist layer, photoresist layer forms the photoetching agent pattern corresponding with chock insulator matter distributing position;
Adopting wet-etching technique to etch chock insulator matter material layer, by regulating etching liquid pressure to realize etching liquid concentration gradient in etching process, form cylindrical spacer, and the cross sectional radius of chock insulator matter upper/lower terminal being greater than the cross sectional radius in the middle part of it.
5. chock insulator matter preparation method as claimed in claim 4, is characterized in that, form the width 1-3 micron larger than the cross-sectional diameter of the upper end end face of described cylindrical spacer of the lines of described photoetching agent pattern.
6. chock insulator matter preparation method as claimed in claim 5, it is characterized in that, described etching liquid is acid etching liquid, and etching temperature is 25-40 DEG C.
7. a liquid crystal panel, is characterized in that, comprise upper substrate, infrabasal plate and at least one chock insulator matter according to any one of claim 1-3, described chock insulator matter is between described upper substrate and infrabasal plate.
8. a display device, is characterized in that, comprises the liquid crystal panel described in claim 7.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104216161B (en) | 2014-08-22 | 2018-06-05 | 京东方科技集团股份有限公司 | A kind of display device |
| CN104991380A (en) * | 2015-07-06 | 2015-10-21 | 武汉华星光电技术有限公司 | Distance piece manufacturing method and array panel manufacturing method |
| JP6507253B2 (en) * | 2015-09-04 | 2019-04-24 | シャープ株式会社 | Display panel manufacturing method |
| CN109541831B (en) * | 2019-01-30 | 2023-04-21 | 京东方科技集团股份有限公司 | Peep-proof structure, adjusting method, display panel and display device |
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| CN1112685A (en) * | 1993-10-19 | 1995-11-29 | 夏普公司 | A liquid crystal display device and a production method for the same |
| CN1223384A (en) * | 1997-12-25 | 1999-07-21 | 夏普公司 | Liquid crystal display device |
| CN102033420A (en) * | 2009-09-29 | 2011-04-27 | Hoya株式会社 | Photomask, photomask manufacturing method, pattern transfer method and method for manufacturing liquid crystal display device |
| CN102269897A (en) * | 2010-06-02 | 2011-12-07 | 京东方科技集团股份有限公司 | Color film substrate and manufacturing method thereof, liquid crystal panel and liquid crystal display (LCD) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3210126B2 (en) * | 1993-03-15 | 2001-09-17 | 株式会社東芝 | Manufacturing method of liquid crystal display device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1112685A (en) * | 1993-10-19 | 1995-11-29 | 夏普公司 | A liquid crystal display device and a production method for the same |
| CN1223384A (en) * | 1997-12-25 | 1999-07-21 | 夏普公司 | Liquid crystal display device |
| CN102033420A (en) * | 2009-09-29 | 2011-04-27 | Hoya株式会社 | Photomask, photomask manufacturing method, pattern transfer method and method for manufacturing liquid crystal display device |
| CN102269897A (en) * | 2010-06-02 | 2011-12-07 | 京东方科技集团股份有限公司 | Color film substrate and manufacturing method thereof, liquid crystal panel and liquid crystal display (LCD) |
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