CN102998049A - Anti-corrosion piezoresistive type pressure sensor - Google Patents
Anti-corrosion piezoresistive type pressure sensor Download PDFInfo
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- CN102998049A CN102998049A CN2012104950803A CN201210495080A CN102998049A CN 102998049 A CN102998049 A CN 102998049A CN 2012104950803 A CN2012104950803 A CN 2012104950803A CN 201210495080 A CN201210495080 A CN 201210495080A CN 102998049 A CN102998049 A CN 102998049A
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- pressure sensor
- type pressure
- corrosion
- synthetic resin
- piezoresistive type
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Abstract
The invention discloses an anti-corrosion piezoresistive type pressure sensor. The anti-corrosion piezoresistive type pressure sensor comprises a Wheatstone bridge consisting of four semiconductor resistance strain gages, wherein each semiconductor resistance strain gage is installed on a detecting casing, and a layer of synthetic resin is wrapped on each semiconductor resistance strain gage. In the anti-corrosion piezoresistive type pressure sensor, the layer of synthetic resin is wrapped outside the piezoresistive type pressure sensor, the semiconductor resistance strain gages are protected and prevented from being corroded by outside environment by utilizing an anti-corrosion characteristic of the synthetic resin, and the service life of the piezoresistive type pressure sensor is prolonged.
Description
Technical field
The present invention relates to a kind of anticorrosion piezoresistive pressure sensor.
Background technology
Traditional mechanical quantity pressure transducer is based on metal elastic gonosome stress deformation, exported to the electric weight conversion by the mechanical quantity elastic deformation, but the large cost of volume is high.With respect to traditional mechanical quantity sensor, the size of MEMS pressure transducer is less, and maximum is no more than one centimetre, and with respect to tradition " machinery " manufacturing technology, its cost performance increases substantially.Present MEMS pressure transducer is mainly silicon piezoresistance type pressure sensor, and it adopts high-accuracy semiconductor resistor foil gauge to form resistance bridge as power electricity conversion metering circuit, has higher measuring accuracy, lower power consumption and extremely low cost.The piezoresistive transducer of resistance bridge, as changing without pressure, it is output as zero, hardly power consumption.Generally this kind pressure transducer can the Measurement accuracy environmental pressure, if but have corrosive substance in the environment, can cause the semiconductor resistor foil gauge to damage, reduce its serviceable life, demand urgently improving.
Summary of the invention
Problem for prior art exists the object of the invention is to propose a kind of anticorrosion piezoresistive pressure sensor, by enforcement of the present invention, has prolonged the serviceable life of piezoresistive pressure sensor.
For reaching this purpose, the present invention by the following technical solutions:
A kind of anticorrosion piezoresistive pressure sensor comprises:
By the resistance bridge that four semiconductor resistor foil gauges form, each semiconductor resistor foil gauge is installed in to be surveyed on the shell, and each semiconductor resistor foil gauge coats one deck synthetic resin.
Preferably, the thickness of described synthetic resin is the 10-20 micron.
Preferably, the thickness of described synthetic resin is 15 microns.
Compared with prior art, the present invention has following beneficial effect:
Among the present invention, at the outside one deck synthetic resin that coats of piezoresistive transducer, utilize the anti-corrosion property of synthetic resin, protection semiconductor resistor foil gauge is not corroded by external environment, has prolonged the serviceable life of piezoresistive pressure sensor.
The invention accompanying drawing
Fig. 1 is a kind of anticorrosion piezoresistive pressure sensor synoptic diagram that the embodiment of the invention 1 provides;
Fig. 2 is the sectional view of semiconductor resistor foil gauge in the embodiment of the invention 1.
Embodiment
The embodiment of the invention 1 provides a kind of anticorrosion piezoresistive pressure sensor, as depicted in figs. 1 and 2, comprise: the resistance bridge that is formed by four semiconductor resistor foil gauges 1, each semiconductor resistor foil gauge is installed in to be surveyed on the shell 10, and each semiconductor resistor foil gauge coats one deck synthetic resin 2, in order not affect the pressure-sensitive deformation sensitivity of semiconductor resistor foil gauge, the thickness of synthetic resin is the 10-20 micron, preferred 15 microns.
The above; only be the better embodiment of the present invention; but protection scope of the present invention is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the present invention discloses; be equal to replacement or change according to technical scheme of the present invention and inventive concept thereof, all should be encompassed within protection scope of the present invention.
Claims (3)
1. an anticorrosion piezoresistive pressure sensor is characterized in that, comprising:
By the resistance bridge that four semiconductor resistor foil gauges form, each semiconductor resistor foil gauge is installed in to be surveyed on the shell, and each semiconductor resistor foil gauge coats one deck synthetic resin.
2. anticorrosion piezoresistive pressure sensor according to claim 1 is characterized in that, the thickness of described synthetic resin is the 10-20 micron.
3. anticorrosion piezoresistive pressure sensor according to claim 2 is characterized in that, the thickness of described synthetic resin is 15 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104950803A CN102998049A (en) | 2012-11-28 | 2012-11-28 | Anti-corrosion piezoresistive type pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104950803A CN102998049A (en) | 2012-11-28 | 2012-11-28 | Anti-corrosion piezoresistive type pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102998049A true CN102998049A (en) | 2013-03-27 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012104950803A Pending CN102998049A (en) | 2012-11-28 | 2012-11-28 | Anti-corrosion piezoresistive type pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102998049A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4015326A (en) * | 1975-02-18 | 1977-04-05 | Brewer Engineering Laboratories, Inc. | Method of mounting a strain gage to a surface |
| US5404124A (en) * | 1992-11-04 | 1995-04-04 | Hottinger Baldwin Messtechnik Gmbh | Foil strain gage and load cell with such a strain gage |
| CN1672022A (en) * | 2002-07-25 | 2005-09-21 | 梅特勒-托莱多有限公司 | Moisture protection for an electromechanical transducer |
| CN202057291U (en) * | 2011-04-15 | 2011-11-30 | 葛洲坝集团试验检测有限公司 | Resistance strain gauge protective structure |
-
2012
- 2012-11-28 CN CN2012104950803A patent/CN102998049A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4015326A (en) * | 1975-02-18 | 1977-04-05 | Brewer Engineering Laboratories, Inc. | Method of mounting a strain gage to a surface |
| US5404124A (en) * | 1992-11-04 | 1995-04-04 | Hottinger Baldwin Messtechnik Gmbh | Foil strain gage and load cell with such a strain gage |
| CN1672022A (en) * | 2002-07-25 | 2005-09-21 | 梅特勒-托莱多有限公司 | Moisture protection for an electromechanical transducer |
| CN202057291U (en) * | 2011-04-15 | 2011-11-30 | 葛洲坝集团试验检测有限公司 | Resistance strain gauge protective structure |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130327 |