CN102969418B - Structure of gallium nitride based light-emitting diode with 3D (Three-Dimensional) vertical structure - Google Patents
Structure of gallium nitride based light-emitting diode with 3D (Three-Dimensional) vertical structure Download PDFInfo
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Abstract
The invention provides a structure of a gallium nitride based light-emitting diode with a 3D (Three-Dimensional) vertical structure, comprising a substrate, an N-type doped layer, a multi-quantum well light-emitting layer, a P-type doped layer, an ITO (Indium Tin Oxide) layer, an insulating layer, a conductive layer, a P-type electrode and a metal electrode, wherein a groove is arranged below the substrate and a through hole is formed at one side of the groove; the N-type doped layer grows on the substrate and the width of the N-type doped layer is less than the width of the substrate; the N-type doped layer does not cover a through hole on the substrate; the multi-quantum well light-emitting layer grows on the N-type doped layer; the P-type doped layer grows on the multi-quantum well light-emitting layer; the ITO layer grows on the P-type doped layer; the insulating layer is manufactured on the side walls of the N-type doped layer, the multi-quantum well light-emitting layer, the P-type doped layer and the ITO layer, and the side wall of the through hole of the substrate; the insulating layer is manufactured on the insulating layer and covers the upper surface of one part of the ITO layer; the P-type electrode is manufactured at the central position of the upper surface of the ITO layer and is connected with the conductive layer; and the metal electrode is manufactured on the side wall face of the groove below the substrate and covers one part of the lower surface of the substrate.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of structure of gallium nitrate based 3D light emitting diode with vertical structure.
Background technology
LED illumination is solid cold light source of new generation, has the features such as low energy consumption, life-span long, easy to control, safety and environmental protection, is desirable energy saving environmental protection product, is suitable for various illumination place.From the structure of LED, GaN base LED can be divided into positive assembling structure, inverted structure and vertical stratification.Group III-nitride many employings sapphire material of current comparative maturity as substrate, due to the insulating properties of Sapphire Substrate, so common GaN base LED adopts positive assembling structure.Vertical structure LED relies on it be suitable for working under large-drive-current and obtain the advantage of high lumen power output, thus can obtain high cost performance.Therefore, GaN base vertical structure LED be market institute to, be semiconductor lighting development inexorable trend, progressively will become main product.
The LED of vertical stratification needs at least one gold thread, thus is connected with extraneous power supply, and every root gold thread itself and solder joint thereof are one of reasons of yields and reliability reduction, and the space shared by gold thread increases the thickness of the encapsulating products of vertical gallium nitride base LED.
The all manufacturing process of 3D vertical structure LED is all carried out in wafer (wafer) level.Due to without the need to beating gold thread and extraneous power supply is linked, the thickness of the encapsulation of the LED chip of through-hole vertical structure is adopted to reduce.Therefore, may be used for manufacturing extra-thin device, as backlight etc.Due to without the need to beating gold thread, yields and reliability all improve.Carry out aging before packaging, aging rear qualified chip is encapsulated, reduce production cost.The particularly device of chip-on-board (COB) form, can improve yields greatly and reduce production cost.
Summary of the invention
Main purpose of the present invention is the structure providing a kind of gallium nitrate based substrate photonic crystal light-emitting diode, and it can improve light extraction efficiency greatly, junction temperature of light emitting diode is reduced, life-saving, is particularly suitable for the making of large scale power-type crystal grain.
For achieving the above object, the invention provides a kind of structure of gallium nitrate based 3D light emitting diode with vertical structure, comprising:
One substrate, has a groove below this substrate, have a through hole in the side of groove;
One N-type doped layer, the growth of this N-type doped layer is on substrate, and the width of this N-type doped layer is less than the width of substrate, and this N-type doped layer does not cover the through hole on substrate;
One multiple quantum well light emitting layer, this multiple quantum well light emitting layer growth is on N-type doped layer;
One P type doped layer, the growth of this P type doped layer is on multiple quantum well light emitting layer;
One ITO layer, the growth of this ITO layer is on P type doped layer;
One insulating barrier, this insulating barrier is produced on the sidewall of N-type doped layer, multiple quantum well light emitting layer, P type doped layer and ITO layer, and on the sidewall of through hole on substrate;
One conductive layer, this conductive layer makes on the insulating layer, and the upper surface of cover part ITO layer;
One P-type electrode, this P-type electrode is produced on the centre of ITO layer upper surface, and is connected with conductive layer;
One metal electrode, this metal electrode is produced on the side wall surface of groove below substrate, and covers the portion lower surface of substrate.
Accompanying drawing explanation
For further illustrating concrete technology contents of the present invention, be described in detail as follows below in conjunction with embodiment and accompanying drawing, wherein:
Fig. 1 is section of structure of the present invention;
Fig. 2 is the vertical view of Fig. 1.
Embodiment
Refer to shown in Fig. 1 and Fig. 2, the invention provides a kind of structure of gallium nitrate based 3D light emitting diode with vertical structure, comprising: substrate 21, the material of substrate 21 is sapphire, Si, SiC, GaAs or glass; The thickness of substrate 21 is 60-200um.Have a groove 211 below this substrate 21, the shape of groove 211 is V-shaped or rectangle, and the degree of depth of groove 211 is identical with substrate.A through hole 212 is had in the side of groove 211; The diameter of through hole 212 is 20-200 μm.
One N-type doped layer 22, the material of N-type doped layer 22 is N--GaN, and thickness is 1-5um; This N-type doped layer 22 grows on substrate 21, and the width of this N-type doped layer 22 is less than the width of substrate 21, and this N-type doped layer 22 does not cover the through hole 212 on substrate 21.
One multiple quantum well light emitting layer 23, the material of multiple quantum well light emitting layer 23 is InGaN, and thickness is 50-500nm; This multiple quantum well light emitting layer 23 grows on N-type doped layer 22.
The material that the material of one P type doped layer 24, P type doped layer 24 is is P--GaN, and thickness is 200-500nm; This P type doped layer 24 grows on multiple quantum well light emitting layer 23.
One ITO layer 25, the material of ITO layer 25 is the InO of 95%
2, 5%SnO
2, thickness is 10-1000nm; This ITO layer 25 grows on P type doped layer 24.
One insulating barrier 26, the material of insulating barrier 26 is silicon dioxide, and thickness is 0.001-1000 μm; This insulating barrier 26 is produced on the sidewall of N-type doped layer 22, multiple quantum well light emitting layer 23, P type doped layer 24 and ITO layer 25, and on the sidewall of through hole 212 on substrate 21.
One conductive layer 27, this conductive layer 27 makes on the insulation layer 26, and the upper surface of cover part ITO layer 25.
One P-type electrode 28, this P-type electrode 28 is produced on the centre of ITO layer 25 upper surface, and is connected with conductive layer 27.
One metal electrode 29, this metal electrode 29 is produced on the side wall surface of groove 211 below substrate 21, and covers the portion lower surface of substrate 21.
The above; be only the embodiment in the present invention, but protection scope of the present invention is not limited thereto, any people being familiar with this technology is in the technical scope disclosed by the present invention; the conversion that can expect easily or replacement, all should be encompassed in of the present invention comprising within scope.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (9)
1. a structure for gallium nitrate based 3D light emitting diode with vertical structure, comprising:
One substrate, has a groove below this substrate, the degree of depth of this groove is identical with the thickness of substrate, has a through hole in the side of groove;
One N-type doped layer, the growth of this N-type doped layer is on substrate, and the width of this N-type doped layer is less than the width of substrate, and this N-type doped layer does not cover the through hole on substrate;
One multiple quantum well light emitting layer, this multiple quantum well light emitting layer growth is on N-type doped layer;
One P type doped layer, the growth of this P type doped layer is on multiple quantum well light emitting layer;
One ITO layer, the growth of this ITO layer is on P type doped layer;
One insulating barrier, this insulating barrier is produced on the sidewall of N-type doped layer, multiple quantum well light emitting layer, P type doped layer and ITO layer, and on the sidewall of through hole on substrate;
One conductive layer, this conductive layer makes on the insulating layer, and the upper surface of cover part ITO layer;
One P-type electrode, this P-type electrode is produced on the centre of ITO layer upper surface, and is connected with conductive layer;
One metal electrode, this metal electrode is produced on the side wall surface of groove below substrate, and this metal electrode contacts with described N-type doped layer, and covers the portion lower surface of substrate.
2. the structure of gallium nitrate based 3D light emitting diode with vertical structure according to claim 1, wherein the material of substrate is sapphire, Si, SiC, GaAs or glass; The thickness of substrate is 60-200um.
3. the structure of gallium nitrate based 3D light emitting diode with vertical structure according to claim 1, the shape of the groove wherein below substrate is V-shaped or rectangle.
4. the structure of gallium nitrate based 3D light emitting diode with vertical structure according to claim 1, wherein the material of N-type doped layer is N--GaN, and thickness is 1-5um.
5. the structure of gallium nitrate based 3D light emitting diode with vertical structure according to claim 1, wherein the material of multiple quantum well light emitting layer is InGaN, and thickness is 50-500nm.
6. the structure of gallium nitrate based 3D light emitting diode with vertical structure according to claim 1, the material that wherein material of P type doped layer is is P--GaN, and thickness is 200-500nm.
7. the structure of gallium nitrate based 3D light emitting diode with vertical structure according to claim 1, wherein the material of ITO layer is the InO of 95%
2, 5%SnO
2, thickness is 10-1000nm.
8. the structure of gallium nitrate based 3D light emitting diode with vertical structure according to claim 1, wherein the material of insulating barrier is silicon dioxide, and thickness is 0.001-1000 μm.
9. the structure of gallium nitrate based 3D light emitting diode with vertical structure according to claim 1, wherein on substrate, the diameter of through hole is 20-200 μm.
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| CN102969418B true CN102969418B (en) | 2015-02-18 |
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| CN104377291B (en) * | 2013-08-16 | 2017-09-01 | 比亚迪股份有限公司 | Led chip and preparation method thereof |
| CN104064641B (en) * | 2014-07-04 | 2018-04-27 | 映瑞光电科技(上海)有限公司 | The production method of through hole vertical-type LED |
| US11205677B2 (en) * | 2017-01-24 | 2021-12-21 | Goertek, Inc. | Micro-LED device, display apparatus and method for manufacturing a micro-LED device |
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| CN101924116A (en) * | 2009-06-12 | 2010-12-22 | 刘胜 | Extensible oversize light-emitting diode (LED) chip and manufacture method thereof |
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| JP3716622B2 (en) * | 1998-06-19 | 2005-11-16 | ソニー株式会社 | Semiconductor laser |
| KR100650990B1 (en) * | 2005-03-21 | 2006-11-29 | 주식회사 이츠웰 | GaN-based light emitting diode and Manufacturing method of the same |
| US20080315240A1 (en) * | 2006-08-31 | 2008-12-25 | Epivalley Co., Ltd. | III-Nitride Semiconductor light Emitting Device |
| JPWO2009088084A1 (en) * | 2008-01-11 | 2011-05-26 | ローム株式会社 | Semiconductor light emitting device |
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| CN101467268A (en) * | 2006-06-09 | 2009-06-24 | 飞利浦拉米尔德斯照明设备有限责任公司 | Semiconductor light emitting device including porous layer |
| CN101924116A (en) * | 2009-06-12 | 2010-12-22 | 刘胜 | Extensible oversize light-emitting diode (LED) chip and manufacture method thereof |
| CN101656260A (en) * | 2009-09-08 | 2010-02-24 | 厦门市三安光电科技有限公司 | Antistatic GaN-based luminescent device and preparation method thereof |
| CN101847675A (en) * | 2009-10-30 | 2010-09-29 | 武汉华灿光电有限公司 | Light-emitting diode chip with vertical structure and manufacturing method thereof |
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