CN102959801A - Microstrip antenna - Google Patents
Microstrip antenna Download PDFInfo
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- CN102959801A CN102959801A CN2011800002497A CN201180000249A CN102959801A CN 102959801 A CN102959801 A CN 102959801A CN 2011800002497 A CN2011800002497 A CN 2011800002497A CN 201180000249 A CN201180000249 A CN 201180000249A CN 102959801 A CN102959801 A CN 102959801A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
- H01Q9/045—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular feeding means
- H01Q9/0457—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular feeding means electromagnetically coupled to the feed line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/30—Arrangements for providing operation on different wavebands
- H01Q5/378—Combination of fed elements with parasitic elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
- H01Q9/0414—Substantially flat resonant element parallel to ground plane, e.g. patch antenna in a stacked or folded configuration
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Abstract
A microstrip antenna is provided in the embodiments of the present invention. The microstrip antenna includes that: four layers of medium plates are set in parallel; a first microstrip patch is set in the middle of the upper surface of the first layer of medium plate; a second microstrip patch is set in the middle of the upper surface of the second layer of medium plate; a first grounded layer is set on the upper surface of the third layer of medium plate, a coupling window is set in the middle of the first grounded layer, and a central conductor is set in the middle of the lower surface of the third layer of medium plate; a second grounded layer is set on the lower surface of the forth layer of medium plate; ; and the third layer of medium plate and the forth layer of medium plate are unsymmetrical media, so that the upper electric field of the central conductor is higher than the lower electric field. The microstrip provided in the embodiments of the present invention enhances the energy coupling efficiency, ensures the antenna bandwidth, reduces backward radiation of the microstrip antenna, the front to back ratio of the microstrip antenna is thereby improved. The integrated thickness of the microstrip antenna is greatly reduced, which is advantageous for integrating transmission and reception circuits of the antenna.
Description
A kind of microstrip antenna
Technical field
The present embodiments relate to mobile communication technology field, more particularly to a kind of microstrip antenna.Background technology
With the development of radio-frequency technique, microstrip antenna is low due to cost, and processing and fabricating easily, is widely applied in microwave, millimeter wave field.Microstrip antenna thickness is small, be easily integrated.With continuing to develop for antenna technology, the technology for expanding the beamwidth of antenna is widely applied, for example：The technologies such as L probe feeds, parasitic patch, U-type groove loading, evolved password.Wherein, evolved password multi-layer microstrip antenna is most widely used, and combination property preferably, has the advantages that high bandwidth, low-cross polarization, size are small.
The sectional view of existing microstrip antenna is generally as shown in Figure 1, it is made up of a of dielectric-slab 1, dielectric-slab 2a and the dielectric-slab 3a be arrangeding in parallel, the a upper surfaces center of dielectric-slab 1 is provided with a 1a of microband paste 1, dielectric-slab 2a upper surfaces center is provided with an a of microband paste 21, dielectric-slab 3a upper surfaces are provided with a ground plane 31a, ground plane 31a centers open up coupling window 32a, dielectric-slab 3a a lower surface provided with a center conductor 33a.The microstrip antenna of this structure, is fed by ground plane 31a, dielectric-slab 3a and center conductor the 33a microstrip line constituted.Because the stray radiation of backward radiation and microstrip antenna occurs in coupling window 32a, therefore the positive emittance of antenna and the ratio of backward radiation energy can be influenceed, that is, influence the front and rear ratio of antenna.As shown in Fig. 2 existing another microstrip antenna generally increases the reflecting plate 4a of aluminium honeycomb material to offset backward radiation below away from antenna medium plate 3a at 1/4 medium wavelength, filled and process 5a between dielectric-slab 3a and reflecting plate 4a.
However, existing microstrip antenna thickness is thicker, be not easy to antenna transmitting and receiving circuit it is integrated.The content of the invention
The embodiment of the present invention provides a kind of microstrip antenna, thicker to solve existing microstrip antenna thickness, be not easy to antenna transmitting and receiving circuit it is integrated the problem of.
The embodiment of the present invention provides a kind of microstrip antenna, including：Four layers of dielectric-slab be arrangeding in parallel；First layer dielectric-slab upper surface center is provided with the first microband paste；Second layer dielectric-slab upper surface center is provided with the second microband paste；Third layer dielectric-slab upper surface is provided with the first ground plane, and the first ground plane center opens up coupling window, and the third layer dielectric-slab lower surface center is provided with center conductor；4th layer of dielectric-slab lower surface is provided with the second ground plane；
The third layer dielectric-slab is asymmetric dielectric with the 4th layer of dielectric-slab, so that electric field is more than lower section electric field above the center conductor.
Microstrip antenna provided in an embodiment of the present invention, third layer dielectric-slab is asymmetric dielectric with the 4th layer of dielectric-slab, so that first half electric-field intensity is far longer than lower half electric-field intensity in strip line, improve energy coupling efficiency, it ensure that the bandwidth of antenna, the backward radiation of microstrip antenna is reduced, so as to improve the front and rear ratio of microstrip antenna.Greatly reduce the integral thickness of microstrip antenna, be conducive to antenna transmitting and receiving circuit it is integrated.Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, the required accompanying drawing used in embodiment or description of the prior art will be briefly described below, apparently, drawings in the following description are only some embodiments of the present invention, for those of ordinary skill in the art, on the premise of not paying creative work, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of existing sectional view of evolved password multi-layer microstrip antenna；
Fig. 2 is existing another evolved password multi-layer microstrip antenna sectional view；
A kind of sectional view for microstrip antenna that Fig. 3 provides for one embodiment of the invention；
A kind of sectional view for microstrip antenna that Fig. 4 provides for another embodiment of the invention；
Fig. 5 is the perspective view of microstrip antenna shown in Fig. 4；
Fig. 6 emulates obtained return loss schematic diagram for the microstrip antenna that the present invention is provided by HFSS；Fig. 7 emulates obtained far-field pattern for the microstrip antenna that the present invention is provided by HFSS；Fig. 8 emulates the obtained interior gain schematic diagram of band for the microstrip antenna that the present invention is provided by HFSS.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained under the premise of creative work is not made belongs to the scope of protection of the invention.
The sectional view for a kind of microstrip antenna that Fig. 3 provides for one embodiment of the invention, as shown in figure 3, the microstrip antenna includes：Four layers of dielectric-slab be arrangeding in parallel；
Wherein, the upper surface center of first layer dielectric-slab 1 is provided with the first microband paste 11;The upper surface center of second layer dielectric-slab 2 is provided with the second microband paste 21;The upper surface of third layer dielectric-slab 3 is provided with the first ground plane 31, and the center of the first ground plane 31 opens up coupling window 32, and the lower surface center of third layer dielectric-slab 3 is provided with center conductor 33;The 4th layer of lower surface of dielectric-slab 4 is provided with the second ground plane 41；
Third layer dielectric-slab 3 and the 4th layer of dielectric-slab 4 are asymmetric dielectric, so that the top electric field of center conductor 33 is more than lower section electric field.
Because third layer dielectric-slab 3 and the 4th layer of dielectric-slab 4 are asymmetric dielectric, then the first ground plane 31, third layer dielectric-slab 3, center conductor 33, the 4th layer of ground plane 41 of dielectric-slab 4 and second collectively form asymmetric dielectric strip line.
Specifically, whole microstrip antenna is made up of first layer dielectric-slab 1, second layer dielectric-slab 2, third layer dielectric-slab 3 and the 4th layer of dielectric-slab 4 this four layers of dielectric-slabs.It is used as a kind of feasible technological process for forming microstrip antenna：Double-sided copper-clad dielectric-slab can be used, copper foil removes unwanted copper foil after photoetching corrosion, retains the pattern needed, then obtain whole microstrip antenna by laminating technology.
Wherein, the center of the upper surface of first layer dielectric-slab 1 is etched away completely by retaining the first microband paste 11, the copper foil of the lower surface of first layer dielectric-slab 1 after photoetching corrosion；The upper surface center of second layer dielectric-slab 2 retains the second microband paste 21, and the copper foil of the lower surface of second layer dielectric-slab 2 is also etched away completely；The copper foil of the upper surface of third layer dielectric-slab 3 retains, as the first ground plane 31 of asymmetric dielectric strip line, and etching couples window 32 on the first ground plane 31, and the center of the lower surface of third layer dielectric-slab 3 retains center conductor 33,
The remainder of the lower surface of third layer dielectric-slab 3 is etched away completely；The 4th layer of upper surface of dielectric-slab 4 is etched away completely, and the copper foil of the 4th layer of lower surface of dielectric-slab 4 retains, and is used as the second ground plane 41 of asymmetric dielectric strip line.
So-called first ground plane 31, third layer dielectric-slab 3, center conductor 33, the 4th layer of ground plane 41 of dielectric-slab 4 and second collectively form asymmetric dielectric strip line and referred to：The third layer dielectric-slab 3 of the top of center conductor 33 and the 4th layer of dielectric-slab 4 of lower section be differ, it is asymmetric.It is this to differ, asymmetric be specifically：Third layer dielectric-slab 3 is different with the thickness of the 4th layer of dielectric-slab 4, or dielectric constant is different, or thickness and dielectric constant it is different.In embodiments of the present invention, the dielectric constant of third layer dielectric-slab 3 needs to be more than the 4th layer of dielectric-slab 4, and the thickness of third layer dielectric-slab 3 needs to be less than the 4th layer of dielectric-slab 4.
Third layer dielectric-slab 3 is different from the thickness of the 4th layer of dielectric-slab 4 in asymmetric dielectric strip line, and either material is different and cause dielectric constant different or third layer dielectric-slab 3 is all different from the thickness and material of the 4th layer of dielectric-slab 4.Using asymmetric dielectric strip line, the electric-field intensity of the top of center conductor 33 will be far longer than the electric-field intensity of lower section, and energy is concentrated mainly on the region of the third layer dielectric-slab 3 between the ground plane 31 of center conductor 33 and first.Energy exchange so near coupling window 32 influences very little to the electric-field intensity of the 4th layer of dielectric-slab 4, whole energy can be effectively delivered to the first microband paste 11 and the second microband paste 21, therefore, asymmetric strip line more can guarantee that effective transmission of energy, reduce backward radiation and the stray radiation of energy.Meanwhile, the presence of the second ground plane 41 serves the effect of shielding energy, prevents energy backward radiation, it is ensured that most energy are gone out from the head-on radiation of microstrip antenna.
The microstrip antenna that the present embodiment is provided, third layer dielectric-slab is asymmetric dielectric with the 4th layer of dielectric-slab, so that first half electric-field intensity is far longer than lower half electric-field intensity in strip line, improve energy coupling efficiency, it ensure that the bandwidth of antenna, the backward radiation of microstrip antenna is reduced, so as to improve the front and rear ratio of microstrip antenna.Greatly reduce the integral thickness of microstrip antenna, be conducive to antenna transmitting and receiving circuit it is integrated.
The sectional view for a kind of microstrip antenna that Fig. 4 provides for another embodiment of the invention, as shown in figure 4, the microstrip antenna includes：Four layers of dielectric-slab be arrangeding in parallel；
The upper surface center of first layer dielectric-slab 1 is provided with the first microband paste 11；The upper table of second layer dielectric-slab 2
Face center is provided with the second microband paste 21；The upper surface of third layer dielectric-slab 3 is provided with the first ground plane 31, and the center of the first ground plane 31 opens up coupling window 32, and the lower surface center of third layer dielectric-slab 3 is provided with center conductor 33;The 4th layer of lower surface of dielectric-slab 4 is provided with the second ground plane 41；
Third layer dielectric-slab 3 and the 4th layer of dielectric-slab 4 are asymmetric dielectric, so that the top electric field of center conductor 33 is more than lower section electric field.
Wherein, first ground plane 31, third layer dielectric-slab 3, center conductor 33, the 4th layer of ground plane 41 of dielectric-slab 4 and second constitute asymmetric dielectric strip line, it is asymmetric dielectric that asymmetric dielectric strip line, which is primarily referred to as the third layer dielectric-slab 3 of the top of center conductor 33 and the 4th layer of dielectric-slab 4 of lower section, can be specifically that third layer dielectric-slab 3 is different with the thickness of the 4th layer of dielectric-slab 4, either dielectric constant difference or thickness and dielectric constant are all different.In the embodiment of the present invention, the dielectric constant of third layer dielectric-slab 3 is more than the 4th layer of dielectric-slab 4, and third layer dielectric-slab 3 and thickness are less than the 4th layer of dielectric-slab 4.
First microband paste 11 can be overlapping with the center of the second microband paste 21, to ensure that the energy of the top transmission to microstrip antenna is maximum.First microband paste 11 and the second microband paste 21 can be disposed as square, the length of side of first microband paste 11 is slightly larger than 1/2 medium wavelength, the length of side of second microband paste 21 is slightly less than 1/2 medium wavelength, this is due to have a resonance point at the first microband paste 11 and at the second microband paste 21 respectively, the length of side of first microband paste 11 is slightly larger than 1/2 medium wavelength, the length of side of second microband paste 21 is slightly less than 1/2 medium wavelength to ensure that the energy between two resonance points is preferably transmitted, and is conducive to expanding the bandwidth of microstrip antenna.
First ground plane 31 is the second microband paste 21 and the shared ground of asymmetric dielectric strip line, coupling window 32 is opened on the first ground plane 31, the coupling window 21 is the gap of strip, from the perspective view shown in Fig. 5, the underface that window 32 is located at the second microband paste 21 is coupled, it is vertical with center conductor 33.Coupling window 32 and center conductor 33 are etched in the upper and lower surface center of third layer dielectric-slab 3, so as to ensure to couple the aligning accuracy of window 32 and center conductor 33.Because the standing wave voltage on the center conductor 33 of terminal open circuit is in cosine distribution, at the medium wavelength of open end about 1/4, voltage amplitude is maximum, and coupling window 32, which is in this position, can realize the maximum coupling of energy, so as to ensure effective transmission of energy.The length of coupling window 32 can be set to be less than 1/2 medium wavelength, so that coupling window 32 is in disresonance shape
State.This is due to that coupling window 32 is strip gap, the gap in resonant condition also can radiated electromagnetic wave, so that microstrip antenna backward radiation can be caused, and then make the work capacity mismatch of whole antenna, influence the normal operating conditions of microstrip antenna.Therefore, coupling window 32 needs to be in non-resonant condition.
As shown in Figure 5, center conductor 33 is located at the underface of coupling window 32, length in center conductor 33 beyond coupling window 32 marginal portion is less than 1/4 medium wavelength, it is equal to the width that the other parts of center conductor 33 are all higher than beyond the coupling marginal portion of window 32 in 1/4 medium wavelength, center conductor 33 and without departing from the width for coupling the marginal portion of window 32 without departing from the length for coupling the marginal portion of window 32.This is due to the presence of energy coupling and aerial radiation, so that the transmission line impedance near coupling window 32 is changed, need to carry out impedance matching to microstrip antenna, the condensance introduced in center conductor 33 terminal open circuit section is to offset the inductive reactance that coupling window 32 is produced.Open circuit section is to be less than in length under conditions of 1/4 medium wavelength in the condition of capacitive, and width more tolerance is stronger.On center conductor 33, one section of conductor before coupling window 32 plays a part of antenna impedance to transform to high impedance realization matching.Transformer section length is about 1/4 medium wavelength, and the width width more original than center conductor 33 is wide, less antenna impedance is transformed to consistent with asymmetric dielectric banding line impedence.Section and the length and width of transformer section are adjusted by finely tuning reactance, it is possible to achieve the optimum bandwidth of microstrip antenna.
In order to increase the bandwidth of microstrip antenna, disresonance chamber can be set in the 3rd dielectric-slab 3 around coupling window 32 and the 4th dielectric-slab 4, the disresonance chamber connects the first ground plane 31 and the second ground plane 41.The disresonance chamber can be made up of at least four metal columns 5, and metal column 5 connects the first ground plane 31 and the second ground plane 41.
It is used as a kind of preferably embodiment, disresonance chamber can be made up of four metal columns 5, the distance of two neighboring metal column 5 is respectively less than 1/2 medium wavelength in disresonance chamber, causes energy mismatch to prevent the near zone of center conductor 33 from producing extra resonance.
What is transmitted in asymmetric dielectric strip line is transverse electric and magnetic field（Transverse Electric and
Magnetic Field;TEM) ripple or quasi- TEM ripples, this is by transmission line（By center conductor 33, the first ground plane 31 and the second ground plane 41 are constituted）Metal boundary condition and dielectric boundaries conditional decision, if third layer dielectric-slab 3 is different with the dielectric constant of the 4th layer of dielectric-slab 4, then in point of two media
Longitudinal electric field component or magnetic-field component will be produced at boundary, but longitudinal component is very weak, therefore propagated in asymmetric dielectric strip line is quasi- TEM ripples；If third layer dielectric-slab 3 and the 4th layer of dielectric-slab 4 are that thickness is differed and dielectric constant is identical, then what is propagated in asymmetric dielectric strip line is exactly TEM ripples.
The first ground plane 31 and the second ground plane 41 in asymmetric dielectric strip line constitute the loop of surface current with center conductor 33 jointly.Direction of the surface current on the first ground plane 31 and the second ground plane 41 with it is in opposite direction on center conductor 33, and the summation of the first ground plane 31 and the upper surface size of current of the second ground plane 41 with it is equal in magnitude on center conductor 33.Because third layer dielectric-slab 3 is different with dielectric constant with the thickness of the 4th layer of dielectric-slab 4 in asymmetric dielectric strip line, so that electric-field intensity is of different sizes in this two layer medium plate, cause surface current size and the second ground plane 41 on the first ground plane 31 also different.Due in the embodiment of the present invention, the dielectric constant of third layer dielectric-slab 3 is more than the dielectric constant of the 4th layer of dielectric-slab 4, or the thickness of third layer dielectric-slab 3 is less than the thickness of the 4th layer of dielectric-slab 4, it is also possible to be that the dielectric constant of third layer dielectric-slab 3 is more than the thickness of dielectric constant and thickness less than the 4th layer of dielectric-slab 4 of the 4th layer of dielectric-slab 4.Therefore, the surface current of the first ground plane 31 is far longer than the second ground plane 41.
When the surface current on the first ground plane 31 is by coupling window 32, shunted before coupling window 32, at coupling window 32 rear interflow.The change in this surface current direction coupling window 32 be formed about one it is non-TEM.The surface that coupling window 32 is located at center conductor 33 can obtain the non-TEM field intensities of maximum.According to the boundary condition of asymmetric strip line, in the presence of this is non-TEM, induced-current is produced on the second ground plane 41, one mirror image of correspondence is non-TEM, non- TEM of mirror image is with former non-TEM field directions on the contrary, playing negative function to former non-TEM.
It should be noted that whether coupling window 32 influences larger in resonant condition on induced-current, it is thereby possible to reduce the length of coupling window 32, makes it be less than the length in resonant condition as far as possible to reduce faradic intensity.In addition, the Filled Dielectrics mode changed in asymmetric strip line in third layer dielectric-slab 3 and the 4th layer of dielectric-slab 4 can also serve the faradic effect of reduction.
The transverse magnetic field formed when the magnetic field part of non-TEM that coupling window 32 is formed about is radiated with the second microband paste 21 just in second layer dielectric-slab 2 is consistent, therefore, and coupling window 32 can encourage second
The radiation of microband paste 21, same second microband paste 21 needs the surface for being located at coupling window 32 to have encouraged most efficient aerial radiation, the energy that first microband paste 11 passes through the second microband paste 21 of coupling, it is also at resonant condition, external emittance, because the second microband paste 21 of excitation is different but close with the resonant frequency of the first microband paste 11, so that the bandwidth of microstrip antenna is improved.
Coupling window 32 can encourage many unwanted transmission modes, topmost is exactly parallel wire TEM ripples nearby because electromagnetic field mode quickly changes in asymmetric strip line.Due to the presence of parallel wire TEM ripples, antenna radiation efficiency can be declined, and bring stray radiation, reduction antenna cross-polarization performance, laterally with backward radiation rejection ability.The disresonance chamber being made up of metal column 5, the boundary condition of parallel wire TEM ripples transmission can be destroyed, suppress the generation of parallel wire TEM ripples, be conducive to reducing the interference of each antenna element in array antenna, be conducive to reducing the interference to each active device behind in active integrated antenna.
The relative bandwidth of antenna is to weigh an important indicator of antenna performance, and the relative bandwidth of microstrip antenna is the ratio of the frequency range and the centre frequency of the electromagnetic wave of microstrip antenna radiation of the electromagnetic wave that microstrip antenna is radiated.And on the premise of antenna relative bandwidth is ensured, it is also contemplated that the return loss of antenna, return loss refers to the ratio of the microstrip antenna electromagnetic wave radiateing and the electromagnetic wave reflected, return loss can be for weighing the electromagenetic wave radiation efficiency of antenna.Fig. 6 is shown in the partial schematic diagram that the microstrip antenna of the invention provided is emulated obtained return loss by HFSS, Fig. 6, and abscissa is the frequency for the electromagnetic wave that microstrip antenna is radiated, and ordinate is the return loss of the electromagnetic wave of microstrip antenna radiation.The frequency range and centre frequency that the electromagnetic wave of microstrip antenna can be provided according to the present invention calculate the relative bandwidth of the microstrip antenna, in figure 6, corresponding return loss ordinate can be found according to the corresponding frequency range of part relative bandwidth of microstrip antenna, it can draw, the microstrip antenna that the present invention is provided return loss in 10% relative bandwidth is less than -20dB, and return loss is less than -18dB in 12% relative bandwidth.Therefore, microstrip antenna provided in an embodiment of the present invention, its return loss meets most application scenarios.
Fig. 7 show the microstrip antenna of the invention provided and emulates obtained far-field pattern by HFSS, in Fig. 7, Theta and phi are spherical coordinates, what is taken in Fig. 7 is two orthogonal cross-sections of the electromagnetic wave energy of microstrip antenna radiation, and have two polarization components in same section, totally four curves, according to coordinate scale
Difference between the big main polarization maximum of energy and the small cross-polarized maximum of energy, or from the forward direction of the main polarization curve of same（0 degree）With it is backward（180 degree）Ratio can draw, the cross polarization of microstrip antenna that the present invention is provided in -27.2dB or so, microstrip antenna it is front and rear than being 16.5dB.Because the size of the second ground plane influences the front and rear ratio of antenna to a certain extent, and backward radiation can be reduced by generally increasing the second ground plane.It therefore, it can single microstrip antenna as array element, the second ground plane increased by expanding the quantity of array element, so that energy is difficult to that around the behind for being mapped to microstrip antenna, i.e., backward radiation can be reduced, so as to improve the front and rear ratio of microstrip antenna.For example：Using 4 X 4 micro-strip antenna array, 4 rows are multiplied by into 4 row microstrip antennas to be stitched together, the front and rear ratio of the micro-strip antenna array can generally bring up to 30dB, and the size of the micro-strip antenna array is only 54mm 54mm, if further expand microstrip antenna array element quantity, can realize by before and after microstrip antenna than high to more than 50dB.
Fig. 8 emulates the obtained interior gain schematic diagram of band for the microstrip antenna that the present invention is provided by HFSS, in Fig. 8, abscissa is the frequency for the electromagnetic wave that microstrip antenna is radiated, ordinate is the gain for the electromagnetic wave that microstrip antenna is radiated, wherein, gain is another important indicator of antenna performance, embodies antenna as the energy beamsteering capabilities of energy transceiver.It can be calculated from Fig. 8, microstrip antenna provided in an embodiment of the present invention, the gain average value of its electromagnetic wave radiated is 7.33dB or so, and on each frequency in the frequency band range of the microstrip antenna, around the fluctuating range of average value, i.e. inband flatness in 0.1 dB or so.As can be seen that on the microstrip antenna that the present invention is provided, each frequency in frequency band range, its electromagnetic wave gain radiated is closer to.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although the present invention is described in detail with reference to the foregoing embodiments, it will be understood by those within the art that：It can still modify to the technical scheme described in foregoing embodiments, or carry out equivalent substitution to which part technical characteristic；And these modifications or replacement, the essence of appropriate technical solution is departed from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (9)
- Claim1st, a kind of microstrip antenna, it is characterised in that including：Four layers of dielectric-slab be arrangeding in parallel；First layer dielectric-slab upper surface center is provided with the first microband paste；Second layer dielectric-slab upper surface center is provided with the second microband paste；Third layer dielectric-slab upper surface is provided with the first ground plane, and the first ground plane center opens up coupling window, and the third layer dielectric-slab lower surface center is provided with center conductor；4th layer of dielectric-slab lower surface is provided with the second ground plane；The third layer dielectric-slab is asymmetric dielectric with the 4th layer of dielectric-slab, so that electric field is more than lower section electric field above the center conductor.2nd, microstrip antenna according to claim 1, it is characterized in that, the dielectric constant of the third layer dielectric-slab be more than the 4th layer of dielectric-slab dielectric constant, and/or the third layer dielectric-slab thickness be less than the 4th layer of dielectric-slab thickness.3rd, microstrip antenna according to claim 1 or 2, it is characterized in that, disresonance chamber is provided with the 3rd dielectric-slab and the 4th dielectric-slab of the coupling thereabout, the disresonance chamber connects first ground plane and second ground plane.4th, microstrip antenna according to claim 3, it is characterised in that the disresonance chamber is made up of at least four metal columns, the metal column connects first ground plane and second ground plane.5th, microstrip antenna according to claim 4, it is characterised in that the disresonance chamber is made up of four metal columns, the distance of the two neighboring metal column is respectively less than 1/2 medium wavelength in the disresonance chamber.6th, microstrip antenna according to claim 1, it is characterised in that the coupling window is strip gap, the length of the coupling window is less than 1/2 medium wavelength.7th, microstrip antenna according to claim 6, it is characterized in that, length in the center conductor beyond the coupling window marginal portion is less than 1/4 medium wavelength, length without departing from the coupling window marginal portion is equal in 1/4 medium wavelength, the center conductor beyond the width for coupling window marginal portion and the center conductor other parts being all higher than without departing from the width for coupling window marginal portion.8th, microstrip antenna according to claim 1, it is characterised in that first microband paste with The center of second microband paste is overlapping.9th, the microstrip antenna according to claim 1 or 8, it is characterised in that the length of side of first microband paste is slightly larger than 1/2 medium wavelength, the length of sides of the 2nd Kai with paster is slightly less than 1/2 medium wavelength.
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| PCT/CN2011/073006 WO2011103841A2 (en) | 2011-04-19 | 2011-04-19 | Microstrip antenna |
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| CN102959801A true CN102959801A (en) | 2013-03-06 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112350055A (en) * | 2019-08-09 | 2021-02-09 | 上海航天测控通信研究所 | X-waveband shaped beam antenna |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MA38890B1 (en) * | 2016-03-07 | 2018-05-31 | Univ Mohammed V | Original multilayer micro-ribbon antenna for x-ray satellite TVs |
| US10326205B2 (en) * | 2016-09-01 | 2019-06-18 | Wafer Llc | Multi-layered software defined antenna and method of manufacture |
| JP6919722B6 (en) * | 2017-12-14 | 2021-12-08 | 株式会社村田製作所 | Antenna devices, antenna modules, and wireless devices |
| EP3588677A1 (en) * | 2018-06-25 | 2020-01-01 | Nokia Solutions and Networks Oy | Dielectric resonator antenna |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4847625A (en) * | 1988-02-16 | 1989-07-11 | Ford Aerospace Corporation | Wideband, aperture-coupled microstrip antenna |
| CN101141023A (en) * | 2007-09-07 | 2008-03-12 | 中国电子科技集团公司第五十五研究所 | Microcomputer electric stacking type millimeter wave antenna |
| US20090046017A1 (en) * | 2007-08-15 | 2009-02-19 | Senglee Foo | Dual polarization antenna element with dielectric bandwidth compensation and improved cross-coupling |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2700067B1 (en) * | 1992-12-29 | 1995-03-17 | France Telecom | Double polarized plated antenna and corresponding transmission / reception device. |
| US5451966A (en) * | 1994-09-23 | 1995-09-19 | The Antenna Company | Ultra-high frequency, slot coupled, low-cost antenna system |
| JPH08222940A (en) * | 1995-02-14 | 1996-08-30 | Mitsubishi Electric Corp | Antenna system |
| DE19815003A1 (en) * | 1998-04-03 | 1999-10-14 | Bosch Gmbh Robert | Dual polarized antenna element |
| FR2801139B1 (en) * | 1999-11-12 | 2001-12-21 | France Telecom | BI-BAND PRINTED ANTENNA |
| FR2828014B1 (en) * | 2001-07-27 | 2003-10-31 | D Phy Espace Dev De Produits H | ANTENNA |
| CN201536151U (en) * | 2009-08-14 | 2010-07-28 | 南京理工大学 | X-band dual-polarized low mutual coupling microstrip antenna |
-
2011
- 2011-04-19 EP EP11746883A patent/EP2482383A4/en not_active Withdrawn
- 2011-04-19 WO PCT/CN2011/073006 patent/WO2011103841A2/en active Application Filing
- 2011-04-19 CN CN2011800002497A patent/CN102959801A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4847625A (en) * | 1988-02-16 | 1989-07-11 | Ford Aerospace Corporation | Wideband, aperture-coupled microstrip antenna |
| US20090046017A1 (en) * | 2007-08-15 | 2009-02-19 | Senglee Foo | Dual polarization antenna element with dielectric bandwidth compensation and improved cross-coupling |
| CN101141023A (en) * | 2007-09-07 | 2008-03-12 | 中国电子科技集团公司第五十五研究所 | Microcomputer electric stacking type millimeter wave antenna |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112350055A (en) * | 2019-08-09 | 2021-02-09 | 上海航天测控通信研究所 | X-waveband shaped beam antenna |
| CN112350055B (en) * | 2019-08-09 | 2022-07-22 | 上海航天测控通信研究所 | X-waveband shaped beam antenna |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2482383A4 (en) | 2012-12-19 |
| WO2011103841A3 (en) | 2012-04-05 |
| WO2011103841A2 (en) | 2011-09-01 |
| EP2482383A2 (en) | 2012-08-01 |
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Application publication date: 20130306 |