CN102956795A - TOP LED (Light Emitting Diode) metal support and manufacturing method thereof - Google Patents
TOP LED (Light Emitting Diode) metal support and manufacturing method thereof Download PDFInfo
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- CN102956795A CN102956795A CN2012102479596A CN201210247959A CN102956795A CN 102956795 A CN102956795 A CN 102956795A CN 2012102479596 A CN2012102479596 A CN 2012102479596A CN 201210247959 A CN201210247959 A CN 201210247959A CN 102956795 A CN102956795 A CN 102956795A
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Abstract
The invention provides a TOP LED (Light Emitting Diode) metal support comprising a positive electrode, a negative electrode, leads respectively arranged at one side of each of the positive electrode and the negative electrode, and reflection cups arranged on the positive electrode and the negative electrode, wherein depressed areas are respectively arranged on the surfaces of the positive electrode and the negative electrode; anti-oxidation treatment layers respectively cover the surfaces of the depressed areas, extend to the surfaces of the leads and extend to the bottom surfaces of the positive electrode, the negative electrode and the leads via the side surfaces of the positive electrode and the negative electrode; the reflection cups are arranged on the anti-oxidation treatment layers. The TOP LED metal support disclosed by the invention is good in heat dissipation performance, packaged by adopting epoxy resin and high in reliability.
Description
Technical field
The present invention relates to LED encapsulation technology field, specifically a kind of TOP LED metallic support and manufacture method thereof.
Background technology
LED(Light emitting diode, light-emitting diode) since have advantages of low energy consumption, high brightness, this year become development the most rapidly, the new type light source device of tool potentiality.And in the development of LED, good directionality, the LED of TOP LED(top bright dipping simple in structure) device is a main direction of studying always.In order better to control light direction and the lighting angle of LED device, usually need to around led chip, reflector be set, so that the light that led chip sends can only penetrate towards top device (being the reflector opening direction).This LED device with reflector, top bright dipping namely is called TOP LED device in the industry.
A kind of general T OP pipe holder that TOP LED device is comparatively commonly used now is the copper material of 0.2MM thickness in the middle of it, in manufacture process, with mould positive and negative electrode is washed open rear bending; Then, by injection molding machine with poly-adjacent benzene two enamines of PPA() material wraps up copper material, only exposes positive and negative electrode.This kind structure has some critical defects, because the PPA material directly is attached on the copper material, copper material is different from the thermal coefficient of expansion of PPA material, is easy to cause the slit occurring between PPA material and the copper material, airborne aqueous vapor just is easy to enter into device inside through the gap, causes device short circuit or damage; Simultaneously, in this structure, copper material is wrapped in the middle of the PPA material, therefore, the heat that produces when led chip is luminous can't be derived, when heat accumulation arrives certain degree, can cause packaging plastic to carry out secondary fusion, the colloid of fusing flows can break gold thread, causes dead lamp.
Summary of the invention
In view of the above problems, the object of the present invention is to provide a kind of TOP LED metallic support.
Another object of the present invention is to provide a kind of TOP LED metallic support manufacture method.
In order to achieve the above object, the present invention has adopted following technical scheme:
A kind of TOP LED metallic support, comprise positive electrode, negative electrode, be located at the lead-in wire of this positive electrode, this negative electrode one side and be located at reflector on this positive electrode, this negative electrode respectively, the surface of this positive electrode, this negative electrode is respectively equipped with a sunk area, this sunk area surface coverage one anti-oxidation processing layer, this anti-oxidation processing layer extends to the surface of this lead-in wire, and extends to the bottom surface of this positive electrode, this negative electrode and this lead-in wire via the side of this positive electrode, this negative electrode; Described reflector is arranged on this anti-oxidation processing layer.
As the preferred technical solution of the present invention: described reflector is epoxide resin material.
As the preferred technical solution of the present invention: be filled with epoxy resin between described positive electrode, negative electrode.
As the preferred technical solution of the present invention: the bottom surface of described positive electrode, negative electrode be respectively equipped with one protrude heat sink, the step place of a side that this is heat sink is provided with epoxy encapsulation.
As the preferred technical solution of the present invention: the degree of depth of described sunk area is 0.1-1.0mm.
A kind of TOP LED metallic support manufacture method may further comprise the steps:
A, a thickness is provided is the metallic plate of 0.3-2.0mm;
B, at metallic plate default positive electrode, negative electrode and lead pattern;
C, employing anticorrosive cover above-mentioned default positive electrode, negative electrode and lead pattern;
The method of d, employing etching or mould punching is removed the metal material beyond default positive electrode, negative electrode and the lead pattern, forms the metallic support with positive electrode, negative electrode and lead-in wire;
E, remove the anticorrosive of positive electrode, negative electrode and wire surface;
F, apply anticorrosive at wire surface;
G, at not positive electrode, the negative electrode surface etching attenuate of coating anticorrosive material, form a sunk area at positive electrode and negative electrode respectively;
The anticorrosive of h, removal wire surface;
I, positive electrode, negative electrode and lead-in wire are electroplated anti-oxidation processing, form an anti-oxidation processing layer on the sunk area surface, this anti-oxidation processing layer extends to the surface of this lead-in wire, and extends to the bottom surface of this positive electrode, this negative electrode and this lead-in wire via the side of this positive electrode, this negative electrode;
Mode moulding reflector on anti-oxidation processing layer of j, employing mold injection.
As the preferred technical solution of the present invention: described reflector is epoxide resin material.
As the preferred technical solution of the present invention: be filled with epoxy resin between described positive electrode, negative electrode.
As the preferred technical solution of the present invention: the bottom surface of described positive electrode, negative electrode be respectively equipped with one protrude heat sink, the step place of a side that this is heat sink is provided with epoxy encapsulation.
As the preferred technical solution of the present invention: the degree of depth of described sunk area is 0.1-1.0mm.
Compared with prior art, the disclosed TOP LED of the present invention metallic support, the heat sink part of its bottom directly is exposed, there is not PPA material parcel, the luminous heat of led chip is directly derived from its back side, has avoided heat accumulation, and the material of encapsulation adopts high TG(glass transition temperature in addition) epoxy resin carry out injection moulding, epoxy resin thermal coefficient of expansion and the copper material of high TG are close, and can be anti-the high temperature of 300 degree; Therefore, the device with this support manufacturing has well solved owing to the thermal coefficient of expansions such as chip, packing colloid, gold thread, metallic support, crystal-bonding adhesive difference causes the not high problem of device reliability.
Description of drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is process chart of the present invention.
Embodiment
See also Fig. 1, comprise positive electrode 101, negative electrode 102, be located at the lead-in wire 103 of this positive electrode 101, these negative electrode 102 1 sides and be located at reflector 104 on this positive electrode 101, this negative electrode 102 respectively; The surface of this positive electrode 101, this negative electrode 102 is respectively equipped with a sunk area 105, and the degree of depth of this sunk area 105 is 0.1-1.0mm; Surface coverage one anti-oxidation processing layer 106 at this sunk area 105, this anti-oxidation processing layer 106 extends to the surface of this lead-in wire 103, and extends to the bottom surface of this positive electrode 101, this negative electrode 102 and this lead-in wire 103 via the side of this positive electrode 101, this negative electrode 102; Described reflector 104 is arranged on the surface of this anti-oxidation processing layer 106, and this reflector 104 adopts the epoxide resin material of high TG, passes through mold injection molding.Described positive electrode 101,102 of negative electrodes are filled with the epoxy resin 107 of high TG.The bottom surface of described positive electrode 101, negative electrode 102 be respectively equipped with one protrude heat sink 109, the step place of 109 1 sides that this is heat sink is provided with epoxy resin 108 encapsulation of high TG.
See also Fig. 2, make above-mentioned TOP LED metallic support, may further comprise the steps:
It is in the metallic plate 110(implementation process of 0.3-2.0mm that one thickness is provided, take the good copper coin of thermal conductivity as preferred version).
At metallic plate 110 default positive electrode, negative electrode and lead patterns.
Adopt anticorrosive to cover above-mentioned default positive electrode, negative electrode and lead pattern.
Adopt the method for etching or mould punching to remove metal material beyond default positive electrode, negative electrode and the lead pattern, form and have positive electrode 101, negative electrode 102 and 103 the metallic support of going between; For strengthening the heat dispersion of support, in this step, reserve respectively a boss 109 in the bottom surface of this positive electrode 101, negative electrode 102, respectively heat sink as positive electrode 101, negative electrode 102.
Remove the anticorrosive on positive electrode 101, negative electrode 102 and 103 surfaces that go between.
At lead-in wire 103 surface-coated anticorrosives.
At not positive electrode 101, the negative electrode 102 surface etching attenuates of coating anticorrosive material, form a sunk area 105 at positive electrode 101 and negative electrode 102 respectively, the degree of depth of this sunk area 105 is 0.1-1.0mm, make lead-in wire 103 thickness greater than the thickness of positive electrode 101 with negative electrode 102, therefore the 103 step places that form with positive electrode 101, negative electrode 102 that go between are the lead-in wire place.
Remove the anti-plating material on lead-in wire 103 surfaces;
To positive electrode 101, negative electrode 102 and go between and 103 electroplate anti-oxidation processing, form an anti-oxidation processing layer 106 on the sunk area surface, this anti-oxidation processing layer 106 extends to the surface of this lead-in wire 103, and extends to the bottom surface of this positive electrode 101, this negative electrode 102 and this lead-in wire 103 via the side of this positive electrode 101, this negative electrode 102.
Adopt mode moulding reflector 104 on anti-oxidation processing layer 106 of mold injection; The high TG(glass transition temperature of these reflector 104 employings) epoxy resin; In the time of moulding reflector 104, be packed into epoxy resin 107,108 at the step place of positive electrode 101,102 of negative electrodes and heat sink 109 1 sides and encapsulate.
The above is preferred embodiment of the present invention only, is not to limit practical range of the present invention; Every equivalence of doing according to the present invention changes and revises, and is all covered by the scope of claims of the present invention.
Claims (10)
1. TOP LED metallic support, comprise positive electrode, negative electrode, be located at the lead-in wire of this positive electrode, this negative electrode one side and be located at reflector on this positive electrode, this negative electrode respectively, it is characterized in that: the surface of this positive electrode, this negative electrode is respectively equipped with a sunk area, this sunk area surface coverage one anti-oxidation processing layer, this anti-oxidation processing layer extends to the surface of this lead-in wire, and extends to the bottom surface of this positive electrode, this negative electrode and this lead-in wire via the side of this positive electrode, this negative electrode; Described reflector is arranged on this anti-oxidation processing layer.
2. a kind of TOP LED metallic support according to claim 1, it is characterized in that: described reflector is epoxide resin material.
3. a kind of TOP LED metallic support according to claim 1 is characterized in that: be filled with epoxy resin between described positive electrode, negative electrode.
4. a kind of TOP LED metallic support according to claim 1 is characterized in that: the bottom surface of described positive electrode, negative electrode be respectively equipped with one protrude heat sink, the step place of a side that this is heat sink is provided with epoxy encapsulation.
5. a kind of TOP LED metallic support according to claim 1, it is characterized in that: the degree of depth of described sunk area is 0.1-1.0mm.
6. a TOP LED metallic support manufacture method is characterized in that, may further comprise the steps:
A, a thickness is provided is the metallic plate of 0.3-2.0mm;
B, at metallic plate default positive electrode, negative electrode and lead pattern;
C, employing anticorrosive cover above-mentioned default positive electrode, negative electrode and lead pattern;
The method of d, employing etching or mould punching is removed the metal material beyond default positive electrode, negative electrode and the lead pattern, forms the metallic support with positive electrode, negative electrode and lead-in wire;
E, remove the anticorrosive of positive electrode, negative electrode and wire surface;
F, apply anticorrosive at wire surface;
G, at not positive electrode, the negative electrode surface etching attenuate of coating anticorrosive material, form a sunk area at positive electrode and negative electrode respectively;
The anticorrosive of h, removal wire surface;
I, positive electrode, negative electrode and lead-in wire are electroplated anti-oxidation processing, form an anti-oxidation processing layer on the sunk area surface, this anti-oxidation processing layer extends to the surface of this lead-in wire, and extends to the bottom surface of this positive electrode, this negative electrode and this lead-in wire via the side of this positive electrode, this negative electrode;
Mode moulding reflector on anti-oxidation processing layer of j, employing mold injection.
7. a kind of TOP LED metallic support manufacture method according to claim 6, it is characterized in that: described reflector is epoxide resin material.
8. a kind of TOP LED metallic support manufacture method according to claim 6 is characterized in that: be filled with epoxy resin between described positive electrode, negative electrode.
9. a kind of TOP LED metallic support manufacture method according to claim 6 is characterized in that: the bottom surface of described positive electrode, negative electrode be respectively equipped with one protrude heat sink, the step place of a side that this is heat sink is provided with epoxy encapsulation.
10. a kind of TOP LED metallic support manufacture method according to claim 6, it is characterized in that: the degree of depth of described sunk area is 0.1-1.0mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012102479596A CN102956795A (en) | 2012-07-17 | 2012-07-17 | TOP LED (Light Emitting Diode) metal support and manufacturing method thereof |
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| CN2012102479596A CN102956795A (en) | 2012-07-17 | 2012-07-17 | TOP LED (Light Emitting Diode) metal support and manufacturing method thereof |
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| CN102956795A true CN102956795A (en) | 2013-03-06 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304806A (en) * | 2015-10-27 | 2016-02-03 | 广东长盈精密技术有限公司 | LED bracket and production method thereof |
| WO2016058370A1 (en) * | 2014-10-14 | 2016-04-21 | 深圳市晶台股份有限公司 | Method for designing moisture-proof structure of led smd holder |
| CN106252168A (en) * | 2016-08-08 | 2016-12-21 | 李聪 | A kind of chopper |
| CN112447899A (en) * | 2019-08-30 | 2021-03-05 | 深圳Tcl数字技术有限公司 | LED support, preparation method thereof, backlight module and display device |
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| US20040159850A1 (en) * | 2003-02-18 | 2004-08-19 | Sharp Kabushiki Kaisha | Semiconductor light-emitting device, manufacturing method thereof, and electronic image pickup device |
| CN1795554A (en) * | 2003-01-16 | 2006-06-28 | 松下电器产业株式会社 | Lead frame for a semiconductor device |
| CN101546684A (en) * | 2009-04-30 | 2009-09-30 | 福州大学 | Anti-oxidation composite membrane electrode |
| CN202817014U (en) * | 2012-07-17 | 2013-03-20 | 孙百贵 | TOP LED metal support |
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2012
- 2012-07-17 CN CN2012102479596A patent/CN102956795A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1795554A (en) * | 2003-01-16 | 2006-06-28 | 松下电器产业株式会社 | Lead frame for a semiconductor device |
| US20040159850A1 (en) * | 2003-02-18 | 2004-08-19 | Sharp Kabushiki Kaisha | Semiconductor light-emitting device, manufacturing method thereof, and electronic image pickup device |
| CN101546684A (en) * | 2009-04-30 | 2009-09-30 | 福州大学 | Anti-oxidation composite membrane electrode |
| CN202817014U (en) * | 2012-07-17 | 2013-03-20 | 孙百贵 | TOP LED metal support |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016058370A1 (en) * | 2014-10-14 | 2016-04-21 | 深圳市晶台股份有限公司 | Method for designing moisture-proof structure of led smd holder |
| CN105304806A (en) * | 2015-10-27 | 2016-02-03 | 广东长盈精密技术有限公司 | LED bracket and production method thereof |
| CN105304806B (en) * | 2015-10-27 | 2019-09-17 | 东莞智昊光电科技有限公司 | LED support and its production method |
| CN106252168A (en) * | 2016-08-08 | 2016-12-21 | 李聪 | A kind of chopper |
| CN112447899A (en) * | 2019-08-30 | 2021-03-05 | 深圳Tcl数字技术有限公司 | LED support, preparation method thereof, backlight module and display device |
| CN112447899B (en) * | 2019-08-30 | 2022-01-04 | 深圳Tcl数字技术有限公司 | LED support, preparation method thereof, backlight module and display device |
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Inventor after: Sun Baigui Inventor before: Sun Bairong |
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| AD01 | Patent right deemed abandoned |
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