CN102955378B - Photoresist morphology characterization method - Google Patents

Abstract

The present invention relates to field of semiconductor manufacture, disclose a kind of photoresist morphology characterization method, measure the flex point of photoresist exposure area side wall slope change, and according to described flex point, photoresist sidewall is divided into some intervals, by measuring each interval top live width, bottom live width and interval depth, being calculated this sidewall inclination angle, interval, the sidewall inclination angle in each described interval of matching, interval depth obtain described photoresist pattern.Various measurements needed for the method are overlooks the wire width measuring carried out from top to bottom, without wafer to be measured is cut into slices during characterizing, do not carry out profile scanning, it is capable of precisely characterizing and not bringing any irrecoverability to damage photoresist sidewall profile, cannot be only used for the improvement to photoresist process ability, checking, apply also for the quality control in production process, it is possible to be further ensured that photoetching quality, be effectively improved device integration and finished industrial product rate.

Description

Photoresist morphology characterization method

Technical field

The present invention relates to field of semiconductor manufacture, particularly to the photoresist characterization technique after development in photoetching process.

Background technology

Light is engraved in semiconductor fabrication and serves vital effect, its graphics resolution, alignment precision, photoetching The performances such as glue sidewall profile, resistdefects and the anti-etching ability of photoresist all directly influence the success or failure of subsequent technique.

In photoetching, the Technical expression ability of photoresist plays important role.But, negative photo gel coating is to ring Border factor sensitivity is less, and resolution is low, is not particularly suited for the photoetching of small size, hachure.Along with integrated circuit fabrication process Progress and the reducing of characteristic size, can IC chip integrated level be more and more higher, utilize and include resin, solvent and photosensitive The positive photoresist of the compositions such as agent realizes the accurate transfer of mask plate patterns, becomes and directly affects chip integration and yield rate Key factor.In a photolithographic process, different characteristic size, different photoresist, according to technological requirement, are set with fixing optimal light Photoresist thickness, the incident illumination of exposure light source is when by the film layer of photoresist, interval for different photoresists, different thickness, energy Amount distribution is also not quite similar, therefore the photoresist obtained after development is not generally the most preferable right angle rectangle, but gradually decays The shape (apertures and spacing) of inverted trapezoidal or trapezoid shape (for line segment), the gross distortion of photoresist sidewall profile Can directly affect the graphical quality in subsequent technique, therefore the quality of photoresist sidewall profile is to discriminate between various photoresist process The important parameter of ability.

In the prior art, the sign of photoresist sidewall profile typically requires and uses cross-sectional scanning electron micro-after section Its section is observed by the equipment such as mirror, and testing sample brings expendable damage.How after photoetching to exposure after Photoresist pattern carries out characterizing and do not bring any irrecoverability to damage, and to ensure processing quality, becomes and improves device further Part integrated level, guarantee finished industrial product rate urgent problem.

Summary of the invention

Technology to be solved by this invention is to provide a kind of photoresist morphology characterization method, cuts not carrying out wafer to be measured On the premise of sheet, it is achieved photoresist sidewall profile characterizes and do not brings any irrecoverability to damage.

For solving above-mentioned technical problem, the invention provides a kind of photoresist morphology characterization method, comprise the following steps:

A, employing live width scanning electron microscopy measurement photoresist exposure area live width；

B, measured waveform according to live width scanning electron microscope, measure the n of photoresist exposure area side wall slope change Individual flex point, and according to described flex point, described photoresist sidewall is divided into n+1 interval, wherein, n >=0 and n are integer；

C1, according to photoresist exposure area characteristic size W distance photoresist edge W/2 at labelling be parallel to photoresist limit The datum line of edge；

C2, measure the edge, photoresist two side, bottom in the i-th interval to live width CDW at datum line_i1、CDW_i2And top light photoresist Edge, two side is to live width CDW at datum line_i1′、CDW_i2', and according to the measured waveform of described live width scanning electron microscope, read The interval depth D in the i-th interval_i, it is calculated the photoresist the first side wall inclination angle in the i-th interval Second sidewall inclination angleWherein, 1≤i≤n+1 and i is integer；

Described in D, matching n+1 interval sidewall inclination angle and interval depth, described photoresist the first side wall pattern is:

$Y_1=\{\begin{array}{cc}\left|X_1\right|\×{\mathrm{tan\α}}_{11}& (-\frac{D_1}{{\mathrm{tan\α}}_{11}}\≤X_1\≤0)\\ \left|X_1\right|\×{\mathrm{tan\α}}_{21}& (-\frac{D_1}{{\mathrm{tan\α}}_{11}}-\frac{D_2}{{\mathrm{tan\α}}_{21}}\≤X_1\≤-\frac{D_1}{{\mathrm{tan\α}}_{11}})\\ .& \\ .& \\ .& \\ \left|X_1\right|\×{\mathrm{tan\α}}_{n1}& (-\underset{i=1}{\overset{n+1}{\Σ}}\frac{D_i}{{\mathrm{tan\α}}_{i1}}\≤X_1\≤-\underset{i=1}{\overset{n}{\Σ}}\frac{D_i}{{\mathrm{tan\α}}_{i1}})\end{array};$

Described photoresist the second sidewall profile is:

$Y_2=\left\{\begin{array}{cc}\left|X_2\right|\×{\mathrm{tan\α}}_{12}& (0\≤X_2\≤\frac{D_1}{{\mathrm{tan\α}}_{12}})\\ \left|X_2\right|\×{\mathrm{tan\α}}_{22}& (\frac{D_1}{{\mathrm{tan\α}}_{12}}\≤X_2\≤\frac{D_1}{{\mathrm{tan\α}}_{12}}+\frac{D_2}{{\mathrm{tan\α}}_{22}})\\ .& \\ .& \\ .& \\ X_2\×{\mathrm{tan\α}}_{n2}& (\underset{i=1}{\overset{n}{\Σ}}\frac{D_i}{{\mathrm{tan\α}}_{i2}}\≤X_2\≤\underset{i=1}{\overset{n+1}{\Σ}}\frac{D_i}{{\mathrm{tan\α}}_{i2}})\end{array}\right.,$

Wherein: X₁、X₂It is along live width direction, described photoresist exposure area coordinate, Y₁、Y₂It is along described interval depth Direction coordinate.

As optional technical scheme, described live width scanning electron microscope uses threshold measurement methods or linear measurement method to enter Row wire width measuring.

As optional technical scheme, described photoresist exposure area wire width measuring scope is more than described photoresist exposure region Characteristic of field size W, further, described photoresist exposure area wire width measuring scope is 10nm～100 μm.

As optional technical scheme, bottom the described each interval of photoresist sidewall, the measurement of live width and top live width uses light Learn wire width measuring instrument or live width scanning electron microscope realizes.

As optional technical scheme, described photoresist sidewall is inverted trapezoidal or the bottom that bottom live width is less than top live width Live width is more than the trapezoid of top live width.

As optional technical scheme, described photoresist is positive photoresist.

Various measurements needed for it is an advantage of the current invention that described photoresist morphology characterization are to overlook from top to bottom and carry out Wire width measuring, characterize during without wafer to be measured is cut into slices, do not carry out profile scanning, according only to live width scanning electricity The microscopical operation principle of son, obtains the curve chart corresponding with treating geodesic structure by detecting secondary electron, intuitively obtains light Vertical dimension between the flex point of photoresist side wall slope change and adjacent comers, thus the Fitting Calculation obtains photoresist sidewall profile Characterization result.Compared with prior art, the photoresist morphology characterization method that the present invention provides is capable of photoresist sidewall shape Precisely characterizing and not bringing any irrecoverability to damage of looks, cannot be only used for the improvement to photoresist process ability, tests Card, applies also for the quality control in production process, it is possible to be further ensured that photoetching quality, is effectively improved device integration And finished industrial product rate.

Accompanying drawing explanation

The photoresist morphology characterization method flow chart that Fig. 1 provides for the present invention the first detailed description of the invention；

Fig. 2 is the photoresist morphology characterization method flow chart that the present invention the second detailed description of the invention provides.

Detailed description of the invention

For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawing enforcement to the present invention Mode is described in further detail.Those skilled in the art can be understood the present invention easily by the content disclosed by this specification Other advantages and effect.The present invention can also be carried out by the most different detailed description of the invention or apply, this explanation Every details in book can also based on different viewpoints and application, carry out under the spirit without departing from the present invention various modification or Change.

The photoresist morphology characterization method flow chart that Fig. 1 provides for the present invention the first detailed description of the invention.

As it is shown in figure 1, the photoresist morphology characterization method that this first detailed description of the invention provides comprises the following steps:

Step A: use live width scanning electron microscopy measurement photoresist exposure area live width.

In this step, photoresist exposure area wire width measuring scope is more than photoresist exposure area characteristic size W, as this The common knowledge of skilled person, the characteristic size of described photoresist exposure area is the minimum of photoresist exposure area and sets Meter/process, it may be understood herein that be to remain the distance between photoresist edge at photoetching development post-exposure region.As optional reality Executing example, design according to general technology characteristic size and device technology, photoresist exposure area wire width measuring scope is 10nm～100 μm。

In this step, live width scanning electron microscope uses threshold measurement methods or linear measurement method to carry out wire width measuring.Make For alternative embodiment, when exposure area is poroid or during the spacing of larger space, use threshold measurement methods；When exposure area is line During shape, use linear measurement method.It is pointed out that when photoresist sidewall the most more tilts, and i.e. sidewall inclination angle is less, if Use threshold measurement methods, percentage ratio need to be selected according to position to be measured, about the public affairs being chosen to be those skilled in the art of percentage ratio Knowing general knowledge, therefore not to repeat here.

Step B: according to the measured waveform of live width scanning electron microscope, measures the side wall slope change of photoresist exposure area N flex point, and according to described flex point, described photoresist sidewall is divided into n+1 interval.

In this step, by the imaging analysis of live width scanning electron microscope is obtained measured waveform, this waveform is a company Continuous curve.During step A uses live width scanning electron microscopy measurement photoresist exposure area live width, as scanning electron Microscope is most basic, most have the imaging mode representing meaning, the electron outside nucleus of testing sample Atom swashing at incident electron Give and leave this atom and form secondary electron, but only in the near-surface region of about ten nanometer scale, secondary electron could escape Go out surface to be received by the receiver and for imaging, and the contrast of secondary electron imaging to mostly come from sample surfaces uneven Shape, they are more near the interaction area of sample surfaces relative to recessed place minimum point for sample surfaces high spot cusp, because of And the secondary electron number that can escape is the most, by the detection to secondary electron, it is possible to the response sample surface that obtains directly perceived is taken advantage of The oscillogram of negative shape, to measure n flex point of photoresist exposure area side wall slope change, and according to described flex point, do and The face that semiconductor substrate surface is parallel, is divided into n+1 interval by described photoresist sidewall.Wherein, n >=0 and n are integer, work as n When=0, the most described photoresist sidewall is a linear interval, and the most described photoresist sidewall is that slope keeps constant inclined-plane.

Step C: measure bottom live width and the top live width in each interval of photoresist sidewall, and according to described live width scanning electron Microscopical measured waveform reads the interval depth in each interval, is calculated the sidewall inclination angle in each interval.

In this step, photoresist sidewall described in optics live width measuring instrument or live width scanning electron microscopy measurement can be used each Live width and top live width bottom interval.Specifically, can be selected for optics live width measuring instrument or live width scanning electron microscope, or its He well known to a person skilled in the art test instrunment, measures bottom live width CD in the i-th interval_iAnd top live width CD_i', and according to institute State the measured waveform of live width scanning electron microscope, read the interval depth D in the i-th interval_i, it is calculated the sidewall in the i-th interval Inclination angleWherein, 1≤i≤n+1 and i is integer.

In this step, for meeting general technology demand, the sidewall inclination angle scope in the described each interval of photoresist sidewall should be 70 ° ～89 °, to ensure subsequent patterning processing quality, meanwhile, the interval depth in the described each interval of photoresist sidewall andYing Ji This is equal to the thickness of described photoresist, in order to verify and to ensure the uniformity of photoresist coating thickness.As alternative embodiment, treat The photoresist sidewall surveyed can be the bottom line width inverted trapezoidal less than top live width, it is also possible to be wider than top live width for bottom line Trapezoid, or owing to standing wave effect defines class waveform periodic undulations sidewall, the photoetching that this detailed description of the invention provides Glue morphology characterization method all can realize the sign to its sidewall profile.

Step D: described in matching n+1 interval sidewall inclination angle and interval depth, obtains described photoresist sidewall profile.

In this step, the photoresist sidewall shape obtained according to described n+1 interval sidewall inclination angle and interval depth matching Looks are: $Y=\{\begin{array}{cc}|X\×{\mathrm{tan\α}}_1|& (\mathrm{\≤}\≤|X|\≤\frac{D}{{\mathrm{tan\α}}_1})\\ |X\×{\mathrm{tan\α}}_2|& (\frac{D_1}{{\mathrm{tan\α}}_1}\≤|X|\≤\frac{D_1}{{\mathrm{tan\α}}_1}+\frac{D_2}{{\tan \mathrm{\α}}_2})\\ .& \\ .& \\ .& \\ |X\×{\mathrm{tan\α}}_{n+1}|& (\underset{i=1}{\overset{n}{\Σ}}\frac{D_i}{{\mathrm{tan\α}}_i}\≤\left|X\right|\≤\underset{i=1}{\overset{n+1}{\Σ}}\frac{D_i}{{\mathrm{tan\α}}_i})\end{array},$ Wherein: X is along described photoresist exposure area line Cross direction coordinate, Y is along described interval depth direction coordinate.

It should be noted that as most preferred embodiment, the photoresist that this detailed description of the invention relates to is positive photoresist, root According to the photolithographic characteristics of positive photoresist, the residue photoresist sidewall formed in exposure area after development is that top line is wider than the end The inverted trapezoidal structure of portion's live width, photoresist two side is symmetrical, and sidewall inclination angle is roughly equal.

In the photoresist morphology characterization method that this detailed description of the invention provides, photoresist exposure area side wall slope need to be measured The flex point of change, and is divided into some intervals according to described flex point by photoresist sidewall, by measure each interval top live width, Bottom live width and interval depth, be calculated this sidewall inclination angle, interval, and the sidewall inclination angle in each described interval of matching, interval depth obtain To described photoresist pattern.Various measurements required in this method are overlooks the wire width measuring carried out from top to bottom, is characterizing During without wafer to be measured is cut into slices, do not carry out profile scanning, it is possible to realize accurate table to photoresist sidewall profile Levy and do not bring any irrecoverability to damage, cannot be only used for the improvement to photoresist process ability, checking, apply also for Quality control in production process, it is possible to be further ensured that photoetching quality, is effectively improved device integration and finished industrial product Rate.

The photoresist morphology characterization method flow chart that Fig. 2 provides for the present invention the second detailed description of the invention.

As in figure 2 it is shown, the photoresist morphology characterization method that the second detailed description of the invention provides comprises the following steps:

Step A: use live width scanning electron microscopy measurement photoresist exposure area live width.

Step B: according to the measured waveform of live width scanning electron microscope, measures the side wall slope change of photoresist exposure area N flex point, and according to described flex point, described photoresist sidewall is divided into n+1 interval.

Above-mentioned two steps are identical with the first detailed description of the invention, and therefore not to repeat here.

Step C1: be parallel to photoetching according to photoresist exposure area characteristic size W labelling at distance photoresist edge W/2 The datum line at glue edge.

In this step, the characteristic size of described photoresist exposure area is the minimal design/work of photoresist exposure area Skill size, it may be understood herein that be to remain the distance between photoresist edge at photoetching development post-exposure region, can be scanned by live width Ultramicroscope or optics live width measuring instrument measurement obtain, it is possible to according to design/technological parameter extracting directly.It is noted that Described datum line is marked in wire width measuring image or measurement system, is used only as the basis reference in subsequent characterizations step, and Non-actual it is marked on testing sample.

Step C2: measure bottom each interval and edge, top light photoresist two side is to live width at datum line, and according to described The measured waveform of live width scanning electron microscope reads the interval depth in each interval, is calculated the two side of each interval photoresist Inclination angle.

In this step, photoresist sidewall described in optics live width measuring instrument or live width scanning electron microscopy measurement can be used each Live width and top live width bottom interval.Specifically, can be selected for optics live width measuring instrument or live width scanning electron microscope, or its He well known to a person skilled in the art test instrunment, measures the edge, photoresist two side, bottom in the i-th interval to line at datum line Wide CDW_i1、CDW_i2And edge, top light photoresist two side is to live width CDW at datum line_i1′、CDW_i2', and sweep according to described live width Retouch the measured waveform of ultramicroscope, read the interval depth D in the i-th interval_i, it is calculated photoresist first side in the i-th interval Wall inclination angleSecond sidewall inclination angleWherein, 1≤i≤n+1 And i is integer, described photoresist the first side wall is positioned on the left of described datum line, and it is right that described second sidewall is positioned at described datum line Side.As alternative embodiment, described photoresist the first side wall is positioned on the right side of described datum line, and described second sidewall is positioned at described base On the left of directrix.

In this step, for meeting general technology demand, the sidewall inclination angle scope in the described each interval of photoresist sidewall should be 70 ° ～89 °, to ensure subsequent patterning processing quality, meanwhile, the interval depth in the described each interval of photoresist sidewall andYing Ji This is equal to the thickness of described photoresist, in order to verify and to ensure the uniformity of photoresist coating thickness.

Step D: described in matching n+1 first, second interval sidewall inclination angle and interval depth, obtains described photoresist two Sidewall profile.

In this step, the photoresist obtained according to described n+1 interval the first side wall inclination angle and interval depth matching the One sidewall profile is: $Y_1=\{\begin{array}{cc}\left|X_1\right|\×{\mathrm{tan\α}}_{11}& (-\frac{D_1}{{\mathrm{tan\α}}_{11}}\≤X_1\≤0)\\ \left|X_1\right|\×{\mathrm{tan\α}}_{21}& (-\frac{D_1}{{\mathrm{tan\α}}_{11}}-\frac{D_2}{{\mathrm{tan\α}}_{21}}\≤X_1\≤-\frac{D_1}{{\mathrm{tan\α}}_{11}})\\ .& \\ .& \\ .& \\ \left|X_1\right|\×{\mathrm{tan\α}}_{n1}& (-\underset{i=1}{\overset{n+1}{\Σ}}\frac{D_i}{{\mathrm{tan\α}}_{i1}}\≤X_1\≤-\underset{i=1}{\overset{n}{\Σ}}\frac{D_i}{{\mathrm{tan\α}}_{i1}})\end{array};$ According to described n+1 interval Photoresist the second sidewall profile that second sidewall inclination angle and interval depth matching obtain is: $Y_2=\left\{\begin{array}{cc}{X}_2\×{\mathrm{tan\α}}_{12}& (0\≤X_2\≤\frac{D_1}{{\mathrm{tan\α}}_{12}})\\ X_2\×{\mathrm{tan\α}}_{22}& (\frac{D_1}{{\mathrm{tan\α}}_{12}}\≤X_2\≤\frac{D_1}{{\mathrm{tan\α}}_{12}}+\frac{D_2}{{\mathrm{tan\α}}_{22}})\\ .& \\ .& \\ .& \\ X_2\×{\mathrm{tan\α}}_{n2}& (\underset{i=1}{\overset{n}{\Σ}}\frac{D_i}{{\mathrm{tan\α}}_{i2}}\≤X_2\≤\underset{i=1}{\overset{n+1}{\Σ}}\frac{D_i}{{\mathrm{tan\α}}_{i2}})\end{array}\right.,$ Wherein: X₁、X₂It is along described photoresist exposure area Live width direction coordinate, Y₁、Y₂It is along described interval depth direction coordinate.

It should be noted that as most preferred embodiment, the photoresist that this detailed description of the invention relates to is positive photoresist, aobvious The residue photoresist sidewall that movie queen is formed in exposure area is the inverted trapezoidal structure that top line is wider than bottom live width, or top Live width is less than the trapezoid structure of bottom live width, and photoresist two side is asymmetric, the photoresist first that obtains according to measurement & characterization, Second sidewall profile is different, and now, owing to photoresist two side pattern is different, its flex point is no longer corresponding relation, step B flex point During mensuration, the flex point of first, second sidewall need to be measured respectively, and with the flex point intersection of the two superposition, as by photoresist First, second sidewall be together divided into the foundation in some intervals.

As alternative embodiment, the photoresist two side after development is symmetrical, the photoresist first that obtains according to measurement & characterization, Second sidewall profile is identical, measurement live width CDW in this detailed description of the invention_i1=CDW_i2=CD_i/ 2, CDW_i1'=CDW_i2'= CD_i'/2, now, this detailed description of the invention is substantially identical with the first detailed description of the invention.

In the photoresist morphology characterization method that this detailed description of the invention provides, required various measurements are bows from top to bottom Depending on the wire width measuring carried out, without wafer to be measured is cut into slices during characterizing, do not carry out profile scanning, it is possible to it is right to realize Precisely the characterizing and do not bring any irrecoverability to damage of photoresist sidewall profile, meanwhile, according to above-mentioned specific descriptions and right The analysis characterizing principle understands, and in addition to characterizing photoresist sidewall profile, this method also can assist photoresist thickness equal The test of even property and checking, and to photoresist surface quality and development post-exposure region surface quality make a certain degree of instead Should, cannot be only used for the improvement to photoresist process ability, checking, apply also for the quality control in production process, energy Enough it is further ensured that photoetching quality, is effectively improved device integration and finished industrial product rate.

Although by referring to some of the preferred embodiment of the invention, the present invention being shown and described, but It will be understood by those skilled in the art that can to it, various changes can be made in the form and details, without departing from this Bright spirit and scope.

Claims (7)

1. a photoresist morphology characterization method, it is characterised in that comprise the following steps:

A, employing live width scanning electron microscopy measurement photoresist exposure area live width；

B, measured waveform according to live width scanning electron microscope, measure n of the side wall slope change of photoresist exposure area and turn Point, and according to described flex point, described photoresist sidewall is divided into n+1 interval, wherein, n >=0 and n are integer；

C1, according to photoresist exposure area characteristic size W distance photoresist edge W/2 at labelling be parallel to photoresist edge Datum line；

C2, measure the edge, photoresist two side, bottom in the i-th interval to live width CDW at datum line_i1、CDW_i2And top light photoresist both sides Mural margin is to live width CDW at datum line_i1′、CDW_i2', and according to the measured waveform of described live width scanning electron microscope, read i-th Interval interval depth D_i, it is calculated the photoresist the first side wall inclination angle in the i-th intervalSecond Sidewall inclination angleWherein, 1≤i≤n+1 and i is integer；

Described in D, matching n+1 interval sidewall inclination angle and interval depth, described photoresist the first side wall pattern is:

$Y_1=\left\{\begin{array}{cc}\left|X_1\right|\×{\mathrm{tan\α}}_{11}& \left(-\frac{D_1}{{\mathrm{tan\α}}_{11}}\≤X_1\≤0\right)\\ \left|X_1\right|\×{\mathrm{tan\α}}_{21}& \left(-\frac{D_1}{{\mathrm{tan\α}}_{11}}-\frac{D_2}{{\mathrm{tan\α}}_{21}}\≤X_1\≤-\frac{D_1}{{\mathrm{tan\α}}_{11}}\right)\\ \begin{array}{c}.\\ .\\ .\end{array}& \begin{array}{c}\\ \\ \end{array}\\ \left|X_1\right|\×{\mathrm{tan\α}}_{n1}& \left(-\underset{i=1}{\overset{n+1}{\mathrm{\Σ}}}\frac{D_i}{{\mathrm{tan\α}}_{i1}}\≤X_1\≤-\underset{i=1}{\overset{n}{\mathrm{\Σ}}}\frac{D_i}{{\mathrm{tan\α}}_{i1}}\right)\end{array}\right.;$

Described photoresist the second sidewall profile is:

$Y_2=\left\{\begin{array}{cc}{X}_2\×{\mathrm{tan\α}}_{12}& \left(0\≤X_2\≤\frac{D_1}{{\mathrm{tan\α}}_{12}}\right)\\ X_2\×{\mathrm{tan\α}}_{22}& \left(\frac{D_1}{{\mathrm{tan\α}}_{12}}\≤X_2\≤\frac{D_1}{{\mathrm{tan\α}}_{12}}+\frac{D_2}{{\mathrm{tan\α}}_{22}}\right)\\ \begin{array}{c}.\\ .\\ .\end{array}& \begin{array}{c}\\ \\ \end{array}\\ X_2\×{\mathrm{tan\α}}_{n2}& \left(\underset{i=1}{\overset{n}{\mathrm{\Σ}}}\frac{D_i}{{\mathrm{tan\α}}_{i2}}\≤X_2\≤\underset{i=1}{\overset{n+1}{\mathrm{\Σ}}}\frac{D_i}{{\mathrm{tan\α}}_{i2}}\right)\end{array}\right.,$

Wherein: X₁、X₂It is along live width direction, described photoresist exposure area coordinate, Y₁、Y₂It is along described interval depth direction Coordinate.

Photoresist morphology characterization method the most according to claim 1, it is characterised in that described live width scanning electron microscope Threshold measurement methods or linear measurement method is used to carry out wire width measuring.

Photoresist morphology characterization method the most according to claim 1, it is characterised in that described photoresist exposure area live width Measurement scope is more than described photoresist exposure area characteristic size W.

Photoresist morphology characterization method the most according to claim 3, it is characterised in that described photoresist exposure area live width Measurement scope is 10nm～100 μm.

Photoresist morphology characterization method the most according to claim 1, it is characterised in that use optics live width measuring instrument or line Live width and top live width bottom each interval of photoresist sidewall described in wide scanning electron microscopy measurement.

Photoresist morphology characterization method the most according to claim 1, it is characterised in that described photoresist sidewall is bottom line The wide inverted trapezoidal less than top live width or bottom line are wider than the trapezoid of top live width.

Photoresist morphology characterization method the most according to claim 1, it is characterised in that described photoresist is positive-tone photo Glue.