CN102945924A - TiSbTe phase-change storage material, preparation method and application thereof - Google Patents
TiSbTe phase-change storage material, preparation method and application thereof Download PDFInfo
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Abstract
The invention provides a TiSbTe phase-change storage material, a preparation method and an application thereof. The preparation method comprises the steps of adopting co-sputtering of SbxTey alloy target and Ti target according to a ratio of Sb to Te in a chemical formula of Ti(1-x-y)SbxTey, wherein during the co-sputtering, inert gases and a doped source are introduced to form a doped TibSbTe phase-change storage material, wherein in the Ti (1-x-y)SbxTey, x is more than 0 and smaller than 8; y is more than 0 and smaller than (1-x). The TiSbTe phase-change storage material disclosed by the invention includes a doping element, so that an amorphous resistance value of the TiSbTe phase-change storage material is remarkably improved, the ratio of amorphous resistance to crystalline resistance is greatly increased, and the amorphous resistance value is increased along with the increase of the content of the doping element, wherein the content of the doping element is determined by flow ratio of the doped source to the inert gases in the sputtering process. Meanwhile, the invention further increases the crystallization temperature of the TiSbTe phase-change storage material and strengthens the data thermal stability. Besides, a phase-change storage unit based on the TiSbTe phase-change storage material disclosed by the invention has a high Set operation speed and high repetitive operation times.
Description
Technical field
The present invention relates to memory area, particularly relate to a kind of phase-change storage material, its preparation method and based on the phase-change memory cell of this phase-change storage material.
Background technology
In semi-conductor market, memory (for example DRAM and FLASH) occupies important seat, along with progressively popularizing of portable electric appts, the market of non-volatility memorizer will constantly enlarge, consumers also can raise gradually to the requirement of the each side such as memory span, speed, and as the main flow memory of non-volatility memorizer, the development of FLASH technology has reached bottleneck, along with the development of integrated circuit, it is outstanding that the technical vulnerability of FLASH begins to become.Writing speed is slow, writes the shortcomings such as voltage is high, cycle-index is limited and has directly limited its further application.So be badly in need of wanting a kind of new memory technology to replace, so that memory technology can all continue steadily towards the small size future development.
Phase transition storage (PC-RAM) is a kind of non-volatile semiconductor memory of rising in recent years, it utilizes phase change composite material to realize the data storage as storage medium, have broad application prospects, be a focus of present memory research, be considered to promise to be most main flow memory of future generation.It is compared with present existing multiple semiconductor memory technologies, has low-power consumption, high density, anti-irradiation, non-volatile, at a high speed read, have extended cycle life (〉 1013 times), device size contractibility (nanoscale), the advantages such as high-low temperature resistant (55 ℃ to 125 ℃), anti-vibration, anti-electronic jamming and manufacturing process simple (energy and existing integrated circuit technology are complementary), be at present by the extensive the strongest competitor in the good memory of future generation of industrial quarters, have wide market prospects.
Phase transition storage is based on S. R. Ovshinsky at memory (the Ovshinsky S R. Reversible electrical switching phenomena in discovered structure. Phys. Rev. Lett. of the Ao Fuxinsiji electronic effect of late 1960s proposition, 1968,21 (20): 1450), the critical material of phase transition storage is phase-change thin film, heating electrode material, insulating material and the extraction electrode material etc. as storage medium.Utilize phase-change thin film can trace back to for the 1970's as the research of phase transition storage core memory medium, but because the at that time restriction of microelectronic process engineering, not developing can commercial phase transition storage.Ovshinsky proposed in 1992 based on the erasable phase transition storage of electrical signal patent (United States Patent (USP), the patent No.: 5166758), with the storage medium of chalcogenide Ge-Sb-Te alloy firm as phase transition storage.Until now, phase transition storage (PC-RAM) is mostly still take chalcogenide compound as storage medium, so be called again immediately memory of chalcogenide compound.
The basic principle of phase transition storage is to utilize the Joule heat of electric pulse or optical pulse generation, make phase-change storage material between amorphous state and crystalline state, produce reversible transition, utilize the resistance difference of material between the crystalline state of the amorphous state of high resistance and low-resistance value to realize the data storage, reading then of data realize by the state of measuring resistance, and phase transformation is exactly to utilize the resistance difference between the high low resistance state to realize the storage of " 1 " and " 0 ".
The TiSbTe phase-change storage material has not only kept the characteristics of rapid phase transition for the serial phase-change storage material of Sb-Te, and has improved thermal stability and the reversible transition characteristic of material.The amorphous state resistance value of not enough is TiSbTe phase-change storage material is excessively low, causes amorphous state resistance and crystalline resistance ratio too little, and less than 2 orders of magnitude, is unfavorable for very much the differentiation of " 1 " and " 0 " in the phase transition storage.
Given this, be necessary to provide a kind of new phase-change storage material, preparation method and application thereof to address the above problem.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of TiSbTe phase-change storage material, preparation method and application thereof, be used for solving amorphous state resistance and the too little problem that is unfavorable for the differentiation of " 1 " and " 0 " in the phase transition storage of crystalline resistance ratio of prior art TiSbTe phase-change storage material.
Reach for achieving the above object other relevant purposes, the invention provides a kind of preparation method of TiSbTe phase-change storage material, described preparation method may further comprise the steps at least:
Pass into inert gas and doped source, according to chemical general formula Ti
1-x-ySb
xTe
yThe proportioning of middle Sb and Te adopts Sb
xTe
yAlloys target and Ti target co-sputtering obtain the TiSbTe phase-change storage material through mixing, wherein, and 0＜x＜0.8,0＜y＜1-x.
Alternatively, the flow ratio of described doped source and inert gas is less than 1/4.
Alternatively, the flow of described doped source is greater than 0sccm and less than or equal to 5sccm, and the flow of described inert gas is greater than 0sccm and less than or equal to 20sccm.
Alternatively, described doped source is the doped source that contains among element N, O or the C any one.
Alternatively, described inert gas comprises Ar gas at least.
Alternatively, in the cosputtering process, Sb
xTe
yAlloys target adopts radio-frequency power supply or DC power supply, and the Ti target adopts radio-frequency power supply or DC power supply.
Alternatively, described Sb
xTe
yThe power that alloys target adopts is 10 ~ 30 W, and the power that described Ti target adopts is 15 ~ 30W.
Alternatively, the thickness of described TiSbTe phase-change storage material is 5 ~ 200nm when being 1 ~ 40min the cosputtering time.
Alternatively, the thickness of described TiSbTe phase-change storage material is 10 ~ 100nm when being 2 ~ 20min the cosputtering time.
The present invention also provides a kind of TiSbTe phase-change storage material that adopts above-mentioned preparation method to obtain, and described TiSbTe phase-change storage material is the TiSbTe phase-change storage material through mixing, and its chemical general formula is Ti
1-x-ySb
xTe
y, wherein, 0＜x＜0.8,0＜y＜1-x.
Alternatively, the element that mixes in the described TiSbTe phase-change storage material is any one among N, O or the C.
Alternatively, the thickness of described TiSbTe phase-change storage material is 5 ~ 200nm.
Alternatively, the thickness of described TiSbTe phase-change storage material is 10 ~ 100nm.
The present invention also provides a kind of phase-change memory cell that adopts above-mentioned TiSbTe phase-change storage material preparation.
As mentioned above, a kind of TiSbTe phase-change storage material of the present invention, preparation method and application thereof, has following beneficial effect: compare with the TiSbTe phase-change storage material of undoped in the prior art, there is doped chemical in the TiSbTe phase-change storage material of the present invention, its amorphous state resistance value is promoted significantly, thereby enlarge significantly amorphous state resistance and crystalline resistance ratio, and the amorphous state resistance value increases along with the increase of doped chemical content, wherein, the content of doped chemical is determined by the flow ratio of the doped source in the sputter procedure and inert gas; Simultaneously the present invention has further improved the crystallization temperature of TiSbTe phase-change storage material, strengthens the data thermal stability; In addition, crystal grain diminishes in the TiSbTe phase-change storage material through mixing, be conducive to accelerate crystallization on the one hand, make on the other hand the phase-change memory cell based on TiSbTe phase-change storage material of the present invention have very fast Set service speed (the general n s order of magnitude) and high repetitive operation number of times.
Description of drawings
Fig. 1 is shown as the Ti of different N doped chemical content in prior art and the embodiment of the invention
0.5Sb
2Te
3The relation curve schematic diagram of the square resistance of phase-change storage material and temperature, wherein, heating rate is 10 ℃/min.
Fig. 2 is shown as in prior art and the embodiment of the invention based on Ti
0.5Sb
2Te
3The resistance of the phase-change memory cell of phase-change storage material and voltage curve schematic diagram, wherein, Ti of the present invention
0.5Sb
2Te
3Phase-change storage material doping N element, doped source N
2The flow velocity of gas is 0.5sccm, and the flow velocity of inert gas Ar gas is 20sccm.
Embodiment
Below by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be used by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change under the spirit of the present invention not deviating from.
See also Fig. 1 and Fig. 2.Need to prove, the diagram that provides in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy only show in graphic with the present invention in relevant assembly but not component count, shape and size drafting when implementing according to reality, kenel, quantity and the ratio of each assembly can be a kind of random change during its actual enforcement, and its assembly layout kenel also may be more complicated.
The TiSbTe phase-change storage material has not only kept the characteristics of rapid phase transition for the serial phase-change storage material of Sb-Te, and has improved thermal stability and the reversible transition characteristic of material.The amorphous state resistance value of not enough is TiSbTe phase-change storage material is excessively low, causes amorphous state resistance and crystalline resistance ratio too little, less than 2 orders of magnitude, is unfavorable for very much the differentiation of " 1 " and " 0 " in the phase transition storage.
In view of this, a kind of TiSbTe phase-change storage material of the present invention, preparation method and application thereof, has following beneficial effect: compare with the TiSbTe phase-change storage material of undoped in the prior art, there is doped chemical in the TiSbTe phase-change storage material of the present invention, its amorphous state resistance value is promoted significantly, thereby enlarge significantly amorphous state resistance and crystalline resistance ratio, and the amorphous state resistance value increases along with the increase of doped chemical content, wherein, the content of doped chemical is determined by the flow ratio of the doped source in the sputter procedure and inert gas; Simultaneously the present invention has further improved the crystallization temperature of TiSbTe phase-change storage material, strengthens the data thermal stability; In addition, crystal grain diminishes in the TiSbTe phase-change storage material through mixing, be conducive to accelerate crystallization on the one hand, make on the other hand the phase-change memory cell based on TiSbTe phase-change storage material of the present invention have very fast Set service speed (the general n s order of magnitude) and high repetitive operation number of times.Below will elaborate the execution mode of a kind of TiSbTe phase-change storage material of the present invention, preparation method and application thereof, and make those skilled in the art not need creative work can understand a kind of TiSbTe phase-change storage material of the present invention, preparation method and application thereof.
The invention provides a kind of preparation method of TiSbTe phase-change storage material, described preparation method may further comprise the steps at least: pass into inert gas and doped source, according to chemical general formula Ti
1-x-ySb
xTe
yThe proportioning of middle Sb and Te adopts Sb
xTe
yAlloys target and Ti target co-sputtering obtain the TiSbTe phase-change storage material through mixing, wherein, 0＜x＜0.8,0＜y＜1-x, the sequencing that passes into inert gas, doped source and cosputtering is decided according to concrete equipment; In the cosputtering process, Sb
xTe
yAlloys target adopts radio-frequency power supply or DC power supply, and the Ti target adopts radio-frequency power supply or DC power supply, in other words, and Sb
xTe
yThere are the situation that adopts different electrical power in alloys target and Ti target; Described Sb
xTe
yThe power that alloys target adopts is 10 ~ 30 W, and the power that described Ti target adopts is 15 ~ 30W, and wherein, described power both can also can be DC power supply power for radio-frequency power supply power; The flow ratio of described doped source and inert gas is less than 1/4; The flow of described doped source is greater than 0sccm and less than or equal to 5sccm, and the flow of described inert gas is greater than 0sccm and less than or equal to 20sccm; Described doped source is the doped source that contains among element N, O or the C any one, for example, and the N of gaseous state
2, NH
3, O
2, CH
4Or in the solid-state carbon etc. any one; Described inert gas comprises Ar gas at least.
In the present embodiment, adopt Sb
2Te
3Alloys target and Ti target co-sputtering, and in the cosputtering process pass into purity and are 99.999% Ar gas and N simultaneously
2Gas, wherein, the flow of Ar gas is fixed as 20sccm, regulates N
2The flow of gas to mix the N element of different content in the TiSbTe phase-change storage material, obtains the Ti through doping N element from 0 to 2sccm
0.5Sb
2Te
3Phase-change storage material.Particularly, in the present embodiment, described Sb
2Te
3Alloys target and Ti target all adopt radio-frequency power supply, wherein, and Sb
2Te
3The radio-frequency power supply power of alloys target is 30W, and the radio-frequency power supply power of Ti target is 26W; Work as Sb
2Te
3Behind the alloys target build-up of luminance, open again Ti target radio-frequency power supply, but be not limited to this, in another embodiment, also can open again Sb behind the Ti target build-up of luminance
2Te
3The power supply of alloys target, or the power supply of the two is opened simultaneously.
Under the preparation condition of the present embodiment, be 5nm/min through the growth rate of the TiSbTe phase-change storage material of doping N element; The thickness of required described TiSbTe phase-change storage material is 5 ~ 200nm in the phase-change memory cell, and at this moment, the cosputtering time is 1 ~ 40min; During the concerning of the square resistance of surveying phase-change storage material and temperature, the thickness of required described TiSbTe phase-change storage material is 10 ~ 100nm, and the cosputtering time is 2 ~ 20min at this moment.
The present invention also provides a kind of TiSbTe phase-change storage material that adopts above-mentioned preparation method to obtain, and described TiSbTe phase-change storage material is the TiSbTe phase-change storage material through mixing, and its chemical general formula is Ti
1-x-ySb
xTe
y, wherein, 0＜x＜0.8,0＜y＜1-x; The element that mixes in the described TiSbTe phase-change storage material is any one among N, O or the C; The thickness of described TiSbTe phase-change storage material is 5 ~ 200nm; The thickness of described TiSbTe phase-change storage material can also be for being 10 ~ 100nm; Described TiSbTe phase-change storage material adopts the electric pulse effect to realize the reversible transition of resistivity; Described TiSbTe phase-change storage material adopts the laser pulse effect to realize the reversible transition of optical reflectivity; The amorphous state resistance value of described phase-change storage material increases along with the increase of doped chemical content.In the present embodiment, described TiSbTe phase-change storage material through mixing is the Ti through doping N element
0.5Sb
2Te
3Phase-change storage material.
The present invention also provides a kind of phase-change memory cell that adopts described TiSbTe phase-change storage material preparation in addition, and wherein, the phase-change storage material in the described phase-change memory cell is the TiSbTe phase-change storage material through mixing, and its chemical general formula is Ti
1-x-ySb
xTe
y, wherein, 0＜x＜0.8,0＜y＜1-x; The element that mixes in the TiSbTe phase-change storage material of described phase-change memory cell is any one among N, O or the C; The thickness of TiSbTe phase-change storage material is 5 ~ 200nm in the described phase-change memory cell; The thickness of TiSbTe phase-change storage material is 10 ~ 100nm in the described phase-change memory cell; The amorphous state resistance value of described phase-change memory cell increases along with the increase of doped chemical content.In the present embodiment, described phase-change memory cell is based on the Ti through doping N element
0.5Sb
2Te
3The phase-change memory cell of phase-change storage material.Crystal grain diminishes in the TiSbTe phase-change storage material through mixing, be conducive to accelerate crystallization on the one hand, make on the other hand the phase-change memory cell based on TiSbTe phase-change storage material of the present invention have very fast Set service speed (the general n s order of magnitude) and high repetitive operation number of times.
See also Fig. 1, Fig. 1 is shown as the Ti of different N doped chemical content among prior art and the present invention
0.5Sb
2Te
3The relation curve schematic diagram of the square resistance of phase-change storage material and temperature, wherein, heating rate is 10 ℃/min.By TiST curve among Fig. 1 as can be known, undoped Ti in the prior art
0.5Sb
2Te
3The amorphous state resistance value of phase-change storage material is greatly about 10
5, its crystalline resistance value is greatly about 5 * 10
3, therefore, undoped Ti in the prior art
0.5Sb
2Te
3The amorphous state of phase-change storage material and the ratio of crystalline resistance are less than 2 orders of magnitude; By N0.5-TST curve among Fig. 1 as can be known, the doped source N of the present embodiment
2The flow of gas is the flow of 0.5sccm and inert gas Ar gas when being 20sccm, the Ti through doping N element of acquisition
0.5Sb
2Te
3The amorphous state resistance value of phase-change storage material brings up to about 10
8, its crystalline resistance value also increases and (is approximately 10
4) but change and not obvious, so the ratio of the amorphous state resistance of the phase-change storage material that represents of N0.5-TST curve and crystalline resistance is near 4 orders of magnitude.Thereby as shown in Figure 1, with regard to the ratio of the amorphous state resistance of phase-change storage material and crystalline resistance, with the undoped Ti of prior art
0.5Sb
2Te
3Phase-change storage material is compared, doped source N of the present invention
2(N0.5-TST curve) obtained when the flow of gas was 0.5sccm through doped Ti
0.5Sb
2Te
3Phase-change storage material has enlarged amorphous state resistance and crystalline resistance ratio.
As shown in Figure 1, along with the increase of doped chemical N content, Ti
0.5Sb
2Te
3The amorphous state resistance value of phase-change storage material raises gradually, and wherein, the N1-TST curve represents the present embodiment doped source N among Fig. 1
2The flow of gas is the flow of 1sccm and inert gas Ar gas when being 20sccm, the Ti of acquisition
0.5Sb
2Te
3The square resistance of phase-change storage material and the relation curve of temperature, the N2-TST curve is the present embodiment doped source N among Fig. 1
2The flow of gas is the flow of 2sccm and inert gas Ar gas when being 20sccm, the Ti of acquisition
0.5Sb
2Te
3The square resistance of phase-change storage material and the relation curve of temperature.
In addition, as shown in Figure 1, along with the increase of doped chemical N content, Ti
0.5Sb
2Te
3The crystallization temperature of phase-change storage material also constantly raises: the Ti of undoped in the prior art
0.5Sb
2Te
3The crystallization temperature of phase-change storage material is about 160 ℃; The doped source N of the present embodiment
2The flow of gas is the flow of 0.5sccm and inert gas Ar gas when being 20sccm, the Ti of acquisition
0.5Sb
2Te
3The crystallization temperature of phase-change storage material is promoted to about 215 ℃; The present embodiment doped source N
2The flow of gas is the flow of 1sccm and inert gas Ar gas when being 20sccm, the Ti of acquisition
0.5Sb
2Te
3The crystallization temperature of phase-change storage material is promoted to more than 250 ℃.The raising that it is pointed out that the phase-change storage material crystallization temperature helps the improvement of phase-change storage material data confining force and its amorphous state thermal stability.Therefore, the present invention has further improved the crystallization temperature of TiSbTe phase-change storage material, strengthens the data thermal stability.
See also Fig. 2, Fig. 2 is shown as in prior art and the embodiment of the invention based on Ti
0.5Sb
2Te
3The resistance of the phase-change memory cell of phase-change storage material and voltage curve schematic diagram, wherein, Ti of the present invention
0.5Sb
2Te
3Phase-change storage material doping N element, the flow velocity of doped source N2 gas is 0.5sccm, the flow velocity of inert gas Ar gas is 20sccm.As shown in Figure 2, the Ti of the undoped of prior art
0.5Sb
2Te
3The amorphous state resistance value of phase-change storage material (TST curve among Fig. 2) is 10
5To 10
6Between, and its crystalline resistance value is 10
3About, so the Ti of undoped in the prior art
0.5Sb
2The amorphous state resistance of Te3 phase-change storage material and the ratio of crystalline resistance are approximately 2 orders of magnitude; The present invention mixes after the doped chemical N, through the Ti of doping N element
0.5Sb
2Te
3The amorphous state resistance value of phase-change storage material (N-TST curve among Fig. 2) is 10
7To 10
8Between, and its crystalline resistance value is 10
4About, the Ti through doping N element of the present invention then
0.5Sb
2Te
3The amorphous state resistance of phase-change storage material and the ratio of crystalline resistance are greater than 3 orders of magnitude.Therefore, in TiSbTe, mix doped chemical, can effectively remedy the too low shortcoming of its amorphous state resistance value, thereby enlarge its amorphous state resistance and crystalline resistance ratio.
In sum, compare with the TiSbTe phase-change storage material of undoped in the prior art, in a kind of TiSbTe phase-change storage material of the present invention, preparation method and the application thereof, there is doped chemical in the TiSbTe phase-change storage material, its amorphous state resistance value is promoted significantly, thereby enlarge significantly amorphous state resistance and crystalline resistance ratio, and the amorphous state resistance value increases along with the increase of doped chemical content, wherein, the content of doped chemical is determined by the flow ratio of the doped source in the sputter procedure and inert gas; Simultaneously the present invention has further improved the crystallization temperature of TiSbTe phase-change storage material, strengthens the data thermal stability; In addition, crystal grain diminishes in the TiSbTe phase-change storage material through mixing, be conducive to accelerate crystallization on the one hand, make on the other hand the phase-change memory cell based on TiSbTe phase-change storage material of the present invention have very fast Set service speed (the general n s order of magnitude) and high repetitive operation number of times.So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not is used for restriction the present invention.Any person skilled in the art scholar all can be under spirit of the present invention and category, and above-described embodiment is modified or changed.Therefore, have in the technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of finishing under disclosed spirit and the technological thought, must be contained by claim of the present invention.
Claims (14)
1. the preparation method of a TiSbTe phase-change storage material is characterized in that, described preparation method may further comprise the steps at least:
Pass into inert gas and doped source, according to chemical general formula Ti
1-x-ySb
xTe
yThe proportioning of middle Sb and Te adopts Sb
xTe
yAlloys target and Ti target co-sputtering obtain the TiSbTe phase-change storage material through mixing, wherein, and 0＜x＜0.8,0＜y＜1-x.
2. the preparation method of a kind of TiSbTe phase-change storage material according to claim 1, it is characterized in that: the flow ratio of described doped source and inert gas is less than 1/4.
3. the preparation method of a kind of TiSbTe phase-change storage material according to claim 1, it is characterized in that: the flow of described doped source is greater than 0sccm and less than or equal to 5sccm, and the flow of described inert gas is greater than 0sccm and less than or equal to 20sccm.
4. the preparation method of a kind of TiSbTe phase-change storage material according to claim 1 is characterized in that: described doped source is the doped source that contains among element N, O or the C any one.
5. the preparation method of a kind of TiSbTe phase-change storage material according to claim 1, it is characterized in that: described inert gas comprises Ar gas at least.
6. the preparation method of a kind of TiSbTe phase-change storage material according to claim 1 is characterized in that: in the cosputtering process, and Sb
xTe
yAlloys target adopts radio-frequency power supply or DC power supply, and the Ti target adopts radio-frequency power supply or DC power supply.
7. the preparation method of a kind of TiSbTe phase-change storage material according to claim 6 is characterized in that: described Sb
xTe
yThe power that alloys target adopts is 10 ~ 30 W, and the power that described Ti target adopts is 15 ~ 30W.
8. the preparation method of a kind of TiSbTe phase-change storage material according to claim 7, it is characterized in that: the cosputtering time, the thickness of described TiSbTe phase-change storage material was 5 ~ 200nm when being 1 ~ 40min.
9. the preparation method of a kind of TiSbTe phase-change storage material according to claim 7, it is characterized in that: the cosputtering time, the thickness of described TiSbTe phase-change storage material was 10 ~ 100nm when being 2 ~ 20min.
10. one kind is adopted the TiSbTe phase-change storage material that the described preparation method of any one obtains in the claim 1 to 9, it is characterized in that: described TiSbTe phase-change storage material is the TiSbTe phase-change storage material through mixing, and its chemical general formula is Ti
1-x-ySb
xTe
y, wherein, 0＜x＜0.8,0＜y＜1-x.
11. a kind of TiSbTe phase-change storage material according to claim 10 is characterized in that: the element that mixes in the described TiSbTe phase-change storage material is any one among N, O or the C.
12. a kind of TiSbTe phase-change storage material according to claim 10 is characterized in that: the thickness of described TiSbTe phase-change storage material is 5 ~ 200nm.
13. a kind of TiSbTe phase-change storage material according to claim 10 is characterized in that: the thickness of described TiSbTe phase-change storage material is 10 ~ 100nm.
14. phase-change memory cell that adopts the described TiSbTe phase-change storage material preparation of any one in the claim 10 to 13.
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| CN104465988A (en) * | 2014-12-16 | 2015-03-25 | 曲阜师范大学 | Phase-change material for phase-change storage device and preparing method of phase-change material |
| CN107359238A (en) * | 2017-06-07 | 2017-11-17 | 同济大学 | The nano combined phase-change thin films of high-speed low-power-consumption Ti Ge Sb and its preparation and application |
| CN108054276A (en) * | 2017-12-06 | 2018-05-18 | 杭州电子科技大学 | For the bionical device of O-Ti-Sb-Te base cynapses in artificial neural network |
| CN110098322A (en) * | 2018-01-30 | 2019-08-06 | 中国科学院上海微***与信息技术研究所 | C adulterates Sc-Sb-Te phase-change storage material, phase-changing memory unit and preparation method thereof |
| CN110120453A (en) * | 2018-02-05 | 2019-08-13 | 中国科学院上海微***与信息技术研究所 | A kind of C-Ti-Sb-Te phase-change material |
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| CN104465988A (en) * | 2014-12-16 | 2015-03-25 | 曲阜师范大学 | Phase-change material for phase-change storage device and preparing method of phase-change material |
| CN107359238A (en) * | 2017-06-07 | 2017-11-17 | 同济大学 | The nano combined phase-change thin films of high-speed low-power-consumption Ti Ge Sb and its preparation and application |
| CN107359238B (en) * | 2017-06-07 | 2019-10-01 | 同济大学 | The nano combined phase-change thin film of high-speed low-power-consumption Ti-Ge-Sb and its preparation and application |
| CN108054276A (en) * | 2017-12-06 | 2018-05-18 | 杭州电子科技大学 | For the bionical device of O-Ti-Sb-Te base cynapses in artificial neural network |
| CN108054276B (en) * | 2017-12-06 | 2021-05-07 | 杭州电子科技大学 | O-Ti-Sb-Te-based burst bionic device for artificial neural network |
| CN110098322A (en) * | 2018-01-30 | 2019-08-06 | 中国科学院上海微***与信息技术研究所 | C adulterates Sc-Sb-Te phase-change storage material, phase-changing memory unit and preparation method thereof |
| CN110120453A (en) * | 2018-02-05 | 2019-08-13 | 中国科学院上海微***与信息技术研究所 | A kind of C-Ti-Sb-Te phase-change material |
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