CN102945919A - Method for improving problem of light spots of high-power light-emitting diode (LED) - Google Patents
Method for improving problem of light spots of high-power light-emitting diode (LED) Download PDFInfo
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- CN102945919A CN102945919A CN2012104030098A CN201210403009A CN102945919A CN 102945919 A CN102945919 A CN 102945919A CN 2012104030098 A CN2012104030098 A CN 2012104030098A CN 201210403009 A CN201210403009 A CN 201210403009A CN 102945919 A CN102945919 A CN 102945919A
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- transparent grain
- led
- light
- filling glue
- weight ratio
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
The invention relates to a light-emitting diode (LED), in particular to an LED packaging structure capable of improving the problem of light spots of a high-power LED. The invention relates to a method for improving the problem of light spots of the high-power LED. Transparent particles with polyhedral structures are distributed in filling glue of the LED packaging structure uniformly and are 2 to 10 percent in weight ratio of the filling glue. The transparent particles are mixed particles of polymethyl methacrylate (PMMA) transparent particles shaped like concave lenses, SiO2 transparent particles shaped like objects with three to eight-faces, and poly carbonate (PC) transparent particles shaped like objects with more than eight faces, wherein the SiO2 transparent particles are 0.6 to 3.7 percent in weight ratio of the filling glue; the PC transparent particles are 0.2 to 2.3 percent in weight ratio of the filling glue; and the PMMA transparent particles are 1.2 to 6.3 percent in weight ratio of the filling glue. The method is used for improving the problem of light spots of the high-power LED.
Description
Technical field
The present invention relates to LED(Light-Emitting Diode, light-emitting diode), relate in particular to a kind of LED encapsulating structure that improves the great power LED hot spot.
Background technology
Utilize the method for fluorescent material conversion to realize that it is a kind of method of studying at present the most hotly at most that LED sends white light.Realizing that LED sends in the white light process, encapsulating structure and technology that fluorescent material (fluorescent material) covers LED then are the key cores that white light LEDs is made.
For example, for the power type white light LED that is used for lighting field, the spatial distribution uniformity of its colour temperature and colourity is the important indicator of properties of product.The colour temperature difference that human eye can be differentiated is 50-100K, and the uniformity of common LED device colourity is still undesirable at present, even the angle colour temperature difference of single LEDs can arrive greatly 800K.As seen, for white light LEDs, the uniformity research of ejecting white light hot spot and improvement are important topics.
Existing to improving the method for hot spot, basically be to set about from the fluorescent glue process aspect, for example the applying date is that 2011.12.28, application number are the patent of invention of 201110445591.X, a kind of LED light spot improving method is disclosed, the method comprising the steps of 1: select materials: select the dark 0.46 ± 0.02mm of being of cup, the rim of a cup angle is the support of 135 degree, and selects the fluorescent material of particle diameter 17-19um and particle diameter 4-5um mutually to arrange in pairs or groups; Step 2: some glue: become hemispherical dome structure with the yellow fluorescent glue point, become approximately parallel two faces with lens.Said method is arranged in pairs or groups mutually by the fluorescent material of selecting particle diameter 17-19um and particle diameter 4-5um, Effective Raise luminous flux, and yellow fluorescent glue put into hemispherical dome structure, increased light-emitting zone.Above-mentioned patent has certain effect to the improvement of hot spot, but can't eliminate the edge macula lutea phenomenon of LED, because edge macula lutea phenomenon is because the edge blue light outgoing of LED is few, and the gold-tinted outgoing that fluorescent material sends causes more.
Also have in addition in fluorescent glue, to add the problem that spread powder is alleviated hot spot, but because light can't pass through spread powder, diffuse reflection occurs on the surface of spread powder in light, then can reduce luminous flux.Therefore, a number of patent application is 200910251589.1 patent of invention, discloses a kind of LED fluorescent glue, and this invention is the combination by spread powder and whitening powder, promotes diffusivity and is beneficial to the refraction of light body.Wherein, spread powder is with the meltable TO powder of internal diameter less than 5 microns, and this spread powder fully is mixed in silica gel to promote diffusivity, reaches the hot spot diffusion, promotes its consistency.Whitening powder is by rhombogen SiO
2With Al
2O
3In conjunction with what form, whitening powder can form the solid barrier of one side in mixture, so that the refraction of light body.In this patent, spread powder and whitening powder need to be combined with the effect that just can reach the alleviation hot spot.And SiO
2Refractive index be about 1.55, through its refraction after pass through again Al
2O
3The metal surface reflection of pulvis (metal ball shaped particle) so that light is spread, therefore needs SiO
2And Al
2O
3Collocation is used; In addition, Al
2O
3Be subject to dust pollution and be difficult for storing, need to namely get i.e. usefulness, so complex process, preparation is difficult for.
Summary of the invention
Technical problem to be solved by this invention is, a kind of method of improving the great power LED hot spot is provided, and by the cooperation of multiple hybrid particles, replaces SiO
2And Al
2O
3Collocation is used, and under the prerequisite that guarantees luminous flux, improves the problem of great power LED hot spot, solves edge macula lutea problem, simplifies simultaneously technique, so that preparation becomes simple.
In order to solve the problems of the technologies described above, the technical solution adopted in the present invention is, a kind of method of improving the great power LED hot spot, the transparent grain of even distribution polyhedral structure in the layer of silica gel in the LED encapsulating structure and/or the fluorescent adhesive layer, described transparent grain accounts for the 2%-10% weight ratio of filling glue.Described transparent grain is SiO
2Transparent grain, PC(polycarbonate) transparent grain and PMMA(polymethyl methacrylate) hybrid particles of transparent grain; Described SiO
2Transparent grain accounts for the 0.6%-3.7% weight ratio of filling glue, and described PC transparent grain accounts for the 0.2%-2.3% weight ratio of filling glue, and described PMMA transparent grain accounts for the 1.2%-6.3% weight ratio of filling glue.Wherein, the PMMA transparent grain is concavees lens shape (the thick shape in intermediate thin both sides), SiO
2Transparent grain is 3 to 8 shapes, and the PC transparent grain is polyhedron-shaped (for example six prisms, seven pyramids, seven prisms, eight prisms etc.) greater than 8.
Wherein the LED encapsulating structure comprises led chip, support, fluorescent adhesive layer, optical lens, and layer of silica gel.Wherein, layer of silica gel and/or the fluorescent adhesive layer transparent grain of polyhedral structure that evenly distributed.The positive conductive feet that support is provided with the cup of placing led chip, draw the both positive and negative polarity of led chip by wire and negative conductive feet and the pedestal that coats above-mentioned positive conductive feet and negative conductive feet; Described led chip is positioned in the cup of described support, and described fluorescent adhesive layer covers described led chip fully, and described layer of silica gel is between fluorescent adhesive layer and optical lens.Transparent grain by the distribution of the filling glue in original LED encapsulating structure polyhedral structure improves great power LED hot spot phenomenon.
Wherein, the refractive index of PMMA transparent grain is 1.49, SiO
2The transparent grain refractive index is that the refractive index of 1.55, PC transparent grain is 1.5872, and according to refractive index from big to small, polyhedral surface of its particle is also more.And the filling glue refractive index (1.4) of the refractive index of above-mentioned material and layer of silica gel and fluorescent glue refractive index (1.5) approach, and the coefficient of expansion approaches, and the combination of three hybrid particles, so that light mutually refraction between the different refractivity particle, its diffusivity is better.Concrete, when light passed through the PMMA transparent grain of the less concavees lens shape of refractive index, by optical principle, light refraction was limited in scope; Light is through the SiO of 3 to 8 larger shapes of refractive index
2During transparent grain, the light refraction expanded range; Light through refractive index larger greater than 8 polyhedron-shaped PC transparent grain the time, light refraction more disperses, but some light reflects downwards, and causes certain light losing.And the combination by above-mentioned three kinds of transparent grains, so that the even diffusion effect of light is best, and light losing is minimum.
Certainly, this transparent grain can also the selective refraction rate be other particles of about 1.5.By be scattered with the transparent grain of polyhedral structure at above-mentioned layer of silica gel and/or fluorescent adhesive layer, can change the course of light, make the light Uniform Dispersion.
As technical scheme further, the maximum gauge of described transparent grain is 100-500um, and above-mentioned transparent grain can realize that by laser cutting also the method for available hydrogen fluoric acid corrosion realizes.Experiment showed, the transparent grain of selecting this diameter range, so that the diffusion of light is the most even.
As technical scheme further, the exiting surface of described optical glass is coarse.This coarse exiting surface specifically several hemispherical projections forms.Like this, through this matsurface, the shooting angle of light is larger, reduces all reflective light.Increase rising angle (being the shooting angle of light), can improve luminous flux.Because total reflection mainly is the marginal position (incidence angle of light causes greatly) that occurs in led chip, can also reduce the generation of hot spot when reducing total reflection simultaneously.
The present invention adopts such scheme, the light that led chip sends can pass transparent grain, light emission rate is high, little on the luminous flux impact, simultaneously, owing to have refractive index difference (and having refractive index difference between the fluorescent glue of transparent grain and fluorescent adhesive layer) between the filling glue of transparent grain and layer of silica gel, light reflects by both interface the time, and changed rising angle, thereby make light more evenly with soft.In addition, blue light and be excited after the light that sends of fluorescent material evenly mix at each lighting angle of LED, effectively increased the exitance of blue light at the LED edge, thereby solved edge macula lutea problem.
Description of drawings
Fig. 1 is the supporting structure schematic diagram (containing led chip) of embodiments of the invention.
Fig. 2 is the structural representation of embodiments of the invention.
Fig. 3 is the generalized section of the optical lens of embodiments of the invention.
Fig. 4 is the schematic diagram that the transparent grain of the concavees lens shape of embodiments of the invention changes opticpath.
Fig. 5 is the schematic diagram that the transparent grain of the triangular pyramid shape of embodiments of the invention changes opticpath.
Fig. 6 is the sectional view of transparent grain of the octahedra shape of embodiments of the invention.
Embodiment
Now the present invention is further described with embodiment by reference to the accompanying drawings.
A kind of method of improving the great power LED hot spot of the present invention, its transparent grain by uniformly dispersing polyhedral structure in the layer of silica gel in the existing LED encapsulating structure and/or the fluorescent adhesive layer is realized.Described transparent grain accounts for the 2%-10% weight ratio of filling glue.Fill so glue and account for the 90%-98% weight ratio, concrete, described transparent grain is the PMMA transparent grain of concavees lens shape, the SiO of 3 to 8 shapes
2Transparent grain and greater than the hybrid particles of 8 polyhedron-shaped PC transparent grain; Described SiO
2Transparent grain accounts for the 0.6%-3.7% weight ratio of filling glue, and described PC transparent grain accounts for the 0.2%-2.3% weight ratio of filling glue, and described PMMA transparent grain accounts for the 1.2%-6.3% weight ratio of filling glue.The maximum gauge of transparent grain described above is 100-500um.By be scattered with the transparent grain of above-mentioned polyhedral structure at layer of silica gel and/or fluorescent adhesive layer, can change the course of light, make the light Uniform Dispersion.
As a specific embodiment, as shown in Figure 1-Figure 3, this LED encapsulating structure comprises led chip 1, support 2, fluorescent adhesive layer 5, optical lens 4 and the layer of silica gel 3 that is comprised of the filling glue of the transparent grain of the polyhedral structure that distributed.Support 2 is provided with the cup of placing led chip 1, positive conductive feet 11 and the negative conductive feet 12 that the both positive and negative polarity of led chip 1 is drawn by wire 13 and the pedestal 14 that coats above-mentioned positive conductive feet 11 and negative conductive feet 12; Described led chip 1 is positioned in the cup of described support 2, and described fluorescent adhesive layer 5 covers described led chip 1 fully, and described layer of silica gel 3 is between fluorescent adhesive layer 5 and optical lens 4.Also be provided with through hole 16 on the described support 2, be used for injecting filling glue.
Wherein, described layer of silica gel 3 comprises filling glue, fills the transparent grain that is evenly distributed with polyhedral structure in the glue, in the present embodiment, chooses SiO
2Transparent grain accounts for 2% weight ratio of filling glue, and described PC transparent grain accounts for 1.5% weight ratio of filling glue, and described PMMA transparent grain accounts for 3% weight ratio of filling glue.Transparent grain is selected SiO
2Transparent grain, PC transparent grain and PMMA transparent grain, the filling glue refractive index of the refractive index of above-mentioned material and layer of silica gel approaches, and the coefficient of expansion approaches.Also can choose the transparent material particle of other refractive indexes about about 1.5.
Concrete, because SiO
2Transparent grain refractive index (1.55), PC transparent grain refractive index (1.5872) and PMMA transparent grain refractive index (1.49) are all a little more than the refractive index (being generally 1.4) of filling glue, light is by transparent grain with when filling between the two interface of glue, and light is offset.Fig. 4 is the schematic diagram that the PMMA transparent grain of concavees lens shape changes opticpath.According to the law of refraction, light angle in the transparent grain medium of concavees lens shape is little, and the angle in the silica gel medium is large.Parallel rays is by behind the transparent grain of concavees lens shape, and light is dispersed to all directions.Light passes through the SiO of 3 to 8 larger shapes of refractive index again
2Behind the larger transparent grain greater than 8 polyhedron-shaped somes such as PC transparent grain of transparent grain and refractive index, behind disperse function repeatedly, it is larger that dispersion angle becomes, and light reaches equally distributed effect in all angles.Therefore, can obtain a kind of LED of uniformly light-emitting by the present invention.Fig. 5 is the schematic diagram that the transparent grain of triangular pyramid shape changes opticpath.Fig. 6 is the sectional view of the PC transparent grain of octahedra shape.
The exiting surface of described optical glass is coarse.This coarse exiting surface specifically several hemispherical projections forms.This coarse exiting surface can be realized by photoetching realization or mould.Like this, through this matsurface, the shooting angle of light is larger, reduces all reflective light.
In order to check the optics consistency of LED outgoing hot spot, choose arbitrarily 5 samples, record the chromaticity coordinates values for spatial distribution of each LED by 9 methods, standard deviation and the dominant wavelength of calculating its chromaticity coordinates according to formula distribute, and the result is as shown in the table:
| Sample number | Sample 1 | |
Sample 3 | |
Sample 5 |
| 9 standard deviations | 0.00479 | 0.00517 | 0.00443 | 0.00469 | 0.00471 |
| Dominant wavelength (nm) | 502-528 | 485-502 | 492-504 | 493-506 | 475-481 |
As seen from the above table, the equal less of chromaticity coordinates standard deviation of 5 samples, dominant wavelength ranges distributes also less, and therefore, above-mentioned technique can better be improved the problem of great power LED hot spot, so that the outgoing hot spot is more even, reduces simultaneously edge macula lutea phenomenon.
Lower mask body is introduced the preparation of above-mentioned transparent grain:
1. SiO
2Transparent grain (being the glass transparent particle): use the method for laser cutting with glass-cutting, obtain 3 to 8 shapes.Also the method for available hydrogen fluoric acid corrosion obtains the shape of needs;
2. PC transparent grain: the method by the mould extrusion modling obtains refractive index between 1.4-1.6, is shaped as polyhedron-shaped, the PC material of molecular weight between 2-20 ten thousand greater than 8;
3. PMMA transparent grain: the method by the mould extrusion modling obtains refractive index between 1.4-1.6, is shaped as concavees lens shape, the molecular weight PMMA material between 2-20 ten thousand.
When making LED encapsulating structure of the present invention, at first make and fill glue, in filling glue, add the transparent grain of 2%-10% weight ratio; Then finish the die bond bonding wire of led chip 1 at support 2, then put fluorescent glue and form fluorescent adhesive layer 5, then optical lens 4 is covered support 2 and flanging, then be mixed with the filling glue of transparent grain by the perfusion of the through hole on the support 2.
Can certainly fill at fluorescent adhesive layer, also can fill in layer of silica gel and fluorescent adhesive layer simultaneously, its principle is filled with above-mentioned layer of silica gel, here repeated description no longer.
The present invention is different from spread powder at present commonly used, because only can't be by spread powder, diffuse reflection occurs on the surface of spread powder in light, then can reduce luminous flux.Because the present invention adds three kinds of difformity different refractivity mixed transparent particles in filling glue, and only can pass transparent grain, its light emission rate is high, and is little on the luminous flux impact.Simultaneously, because transparent grain and fill between the glue and have refractive index difference, light reflects by both interface the time, and has changed rising angle, thereby makes light more evenly and soft.In addition, select the particle in the 100-500um scope, so that the dispersion of light is more even.
Although specifically show and introduced the present invention in conjunction with preferred embodiment; but the those skilled in the art should be understood that; within not breaking away from the spirit and scope of the present invention that appended claims limits; can make a variety of changes the present invention in the form and details, be protection scope of the present invention.
Claims (4)
1. method of improving the great power LED hot spot is characterized in that: the even transparent grain of distribution polyhedral structure in the layer of silica gel in the LED encapsulating structure and/or the fluorescent adhesive layer, and described transparent grain accounts for the 2%-10% weight ratio of filling glue; Described transparent grain is the PMMA transparent grain of concavees lens shape, the SiO of 3 to 8 shapes
2Transparent grain and greater than the hybrid particles of 8 polyhedron-shaped PC transparent grain; Described SiO
2Transparent grain accounts for the 0.6%-3.7% weight ratio of filling glue, and described PC transparent grain accounts for the 0.2%-2.3% weight ratio of filling glue, and described PMMA transparent grain accounts for the 1.2%-6.3% weight ratio of filling glue;
Described LED encapsulating structure comprises led chip, support, fluorescent adhesive layer, optical lens and layer of silica gel; The positive conductive feet that support is provided with the cup of placing led chip, draw the both positive and negative polarity of led chip by wire and negative conductive feet and the pedestal that coats above-mentioned positive conductive feet and negative conductive feet; Led chip is positioned in the cup of described support, and fluorescent adhesive layer covers described led chip fully, and described layer of silica gel is between fluorescent adhesive layer and optical lens.
2. a kind of method of improving the great power LED hot spot according to claim 1, it is characterized in that: the maximum gauge of described transparent grain is 100-500um.
3. a kind of method of improving the great power LED hot spot according to claim 1, it is characterized in that: the exiting surface of described optical glass is coarse.
4. a kind of method of improving the great power LED hot spot according to claim 3 is characterized in that: this coarse exiting surface specifically several hemispherical projections forms.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210403009.8A CN102945919B (en) | 2012-10-22 | 2012-10-22 | Method for improving light spots of high-power light-emitting diode (LED) |
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|---|---|---|---|
| CN201210403009.8A CN102945919B (en) | 2012-10-22 | 2012-10-22 | Method for improving light spots of high-power light-emitting diode (LED) |
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| CN102945919A true CN102945919A (en) | 2013-02-27 |
| CN102945919B CN102945919B (en) | 2015-04-22 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681991A (en) * | 2013-12-20 | 2014-03-26 | 纳晶科技股份有限公司 | Silicone lens for LED (Light Emitting Diode) packaging and manufacturing method thereof |
| WO2021102628A1 (en) | 2019-11-25 | 2021-06-03 | Ipc Works Limited | Light filter and the method thereof |
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| CN101135739A (en) * | 2006-09-01 | 2008-03-05 | 颖台科技股份有限公司 | Diffusing plate having multiple aspheric surface surface structure |
| US20110020607A1 (en) * | 2006-03-10 | 2011-01-27 | Lg Innotek Co., Ltd. | Photoluminescent Sheet |
| CN102544259A (en) * | 2011-12-28 | 2012-07-04 | 深圳市华高光电科技有限公司 | LED light spot improving method |
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| US20110020607A1 (en) * | 2006-03-10 | 2011-01-27 | Lg Innotek Co., Ltd. | Photoluminescent Sheet |
| CN101118291A (en) * | 2006-08-04 | 2008-02-06 | 鸿富锦精密工业（深圳）有限公司 | Pervasion piece |
| CN101135739A (en) * | 2006-09-01 | 2008-03-05 | 颖台科技股份有限公司 | Diffusing plate having multiple aspheric surface surface structure |
| CN102544259A (en) * | 2011-12-28 | 2012-07-04 | 深圳市华高光电科技有限公司 | LED light spot improving method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681991A (en) * | 2013-12-20 | 2014-03-26 | 纳晶科技股份有限公司 | Silicone lens for LED (Light Emitting Diode) packaging and manufacturing method thereof |
| WO2021102628A1 (en) | 2019-11-25 | 2021-06-03 | Ipc Works Limited | Light filter and the method thereof |
| CN114746778A (en) * | 2019-11-25 | 2022-07-12 | 爱斯产品研发有限公司 | Optical filter and method thereof |
| CN114746778B (en) * | 2019-11-25 | 2024-06-14 | 爱斯产品创造有限公司 | Optical filter and method thereof |
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| CN102945919B (en) | 2015-04-22 |
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Denomination of invention: Method for improving problem of light spots of high-power light-emitting diode (LED) Effective date of registration: 20150923 Granted publication date: 20150422 Pledgee: China Co truction Bank Corp Xiamen branch Pledgor: Xiamen Colorful Optoelectronics Technology Co.,Ltd. Registration number: 2015350000074 |
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