CN102931330A - Preparation method of LED (light-emitting diode) flat-panel display unit - Google Patents
Preparation method of LED (light-emitting diode) flat-panel display unit Download PDFInfo
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- CN102931330A CN102931330A CN2012104495150A CN201210449515A CN102931330A CN 102931330 A CN102931330 A CN 102931330A CN 2012104495150 A CN2012104495150 A CN 2012104495150A CN 201210449515 A CN201210449515 A CN 201210449515A CN 102931330 A CN102931330 A CN 102931330A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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Abstract
The invention discloses a preparation method of an LED (light-emitting diode) flat-panel display unit. The preparation method comprises the following steps of: 1, taking a substrate, preparing a circuit and metal convex points on the substrate; 2, preparing a plurality of LED chips on the substrate by a flip-chip technology, and reducing the interval between the LED chips, wherein the LED chips and the circuit on the substrate are electrically connected through the metal convex points; 3, taking a drive substrate, and 4, electrically connecting the substrate with the LED chips and the drive substrate, and finishing preparing. The preparation method has the advantages of small pixel pitch, good control property and easiness installation.
Description
Technical field
The invention belongs to technical field of semiconductors, be particularly related to a kind of preparation method of LED flat panel display unit, the method has the LED flat panel display unit of minimum pel spacing, and can carry out independent control to each luminescence unit by external Drive and Control Circuit, can be used for LED flat panel display and LED full-color display etc.
Background technology
Main material in the colour liquid crystal display device is liquid crystal, ito glass, polaroid and color filter, shows by backlight.LCD TV is owing to its structure, at aspect Shortcomings such as brightness, response time, color renditions.The self-characteristic of LED has determined to adopt LED self-luminous technology can greatly improve the deficiency of lcd technology.In addition, compare with lcd technology, LED self-luminous demonstration has reduced the every cost that produces in liquid crystal, ito glass, polaroid and color filter and the manufacturing process than liquid crystal display.
Directly adopt the LED panel as display screen, dwindling the LED pel spacing is a vital task, and normally used surface-mount type packaged LED can't satisfy the needs of this respect.Display pixel in the at present common LED flat panel display unit is comprised of packaged LED unit.Because described LED unit comprises several LEDs chips, lead frame, heat dispersion substrate and transparent sealing, has limited spacing and the size of pixel, be difficult to therefore realize that high-resolution shows.Be to realize the high-resolution LED flat panel display, the present invention utilizes flip chip technology (Flip-chip), and led chip directly is placed on the base plate for packaging, is realizing minimum spacing and is high-resolutionly simplifying simultaneously original production technology.
Summary of the invention
The preparation method who the purpose of this invention is to provide a kind of LED flat panel display unit, the method have minimum pel spacing, control performance good, be easy to install.
For achieving the above object, the invention provides a kind of preparation method of LED flat panel display unit, comprise following steps:
Step 1: get a substrate, make circuit and metal salient point at substrate;
Step 2: adopt reverse installation process, a plurality of led chips are produced on the substrate, dwindle the spacing between the led chip; This led chip is realized being electrically connected by metal salient point with the circuit on the substrate;
Step 3: get one and drive substrate;
Step 4: the substrate that will be manufactured with led chip is interconnected with the driving electrical property of substrate, finishes preparation.
The invention provides compared with prior art: it is to utilize flip chip technology (Flip-chip), led chip directly is placed on drive on the substrate, is realizing minimum spacing and is high-resolutionly simplifying simultaneously original production technology.
Description of drawings
For further specifying technology contents of the present invention, the invention will be further described below in conjunction with drawings and Examples, wherein:
Fig. 1 is preparation flow figure of the present invention;
Fig. 2 is substrate schematic diagram of the present invention;
Fig. 3 is the base plan figure that finishes after the led chip upside-down mounting;
Fig. 4 is that the present invention prepares the structural representation after finishing, wherein Fig. 4 a is the structure that adopts pressure welding mode completing substrate combination, Fig. 4 b is the structure that adopts the combination of through hole technology completing substrate, Fig. 4 c is the back side that drive circuit directly is produced on substrate, finishes structural representation of the present invention in conjunction with the through hole technology.
Embodiment
See also Fig. 1, and in conjunction with consulting shown in Fig. 2-4, the invention provides a kind of preparation method of LED flat panel display unit, comprise following steps:
Step 1: get a substrate 1, the material of described substrate 1 is silicon chip, pottery, wiring board or metallic plate, make the required metal salient point 12 (consulting Fig. 2) of circuit 11 and flip LED chips 2 at described substrate 1, the design principle of disposal wires of described circuit 11 is that the negative electrode of every row led chip 2 links together with the anodic bonding of every row led chip 2 in the led array together; Described circuit 11 and metal salient point 12 can be made, and carry out annealing in process after the metal deposit by photoetching, metal deposit.In addition, deposit silicon dioxide carries out isolation processing between described circuit 11, plays the effect that prevents short circuit between the circuit 11.Circuit 11 is finally guided to the edge of substrate 1.Can adopt following two kinds of different modes to form conductive channel in the edge of described substrate 1: the edge at described substrate 1 utilizes chemical corrosion or laser drilling technique to make a plurality of through holes in edge, and described through hole electroplated, finish the making of conductive channel, perhaps can utilize in the edge of described substrate 1 photoetching, metal depositing technics to make metal electrode, in order in later process, finish the making of conductive channel by bond technology.
Step 2: adopt reverse installation process, a plurality of led chips 2 are produced on the substrate 1 (consult Fig. 3), dwindle the spacing between the led chip 2; Utilize reverse installation process with metal salient point 12 accurate contrapositions on described led chip 2 and the substrate 1 and be bonded together, led chip 2 is electrically connected by metal salient point 12 formation with circuit 11 on the substrate 1; By described a plurality of led chip 2 upside-down mountings are formed the led chip array at substrate 1, the spacing between the described led chip 2 is 10-100 μ m, and the led chip 2 in the described led chip array is monochrome or polychrome chip; Wherein red light chips can be to be made by GaAs, GaInP or InGaN material with high In ingredient.The blue green light chip is then made by chip technology by III-V family material.
Step 3: get one and drive substrate 3, the drive circuit on the described driving substrate 3 is active drive circuit, or the passive type drive circuit.
Step 4: the substrate 1 that will be manufactured with led chip 2 is connected with driving substrate 3, finishes electrically interconnected.Concrete mode can be according to the method described in the step 1, adopts electrically interconnected (the consulting Fig. 4) of the electroplates in hole or pressure welding mode completing substrate 1 and described driving substrate 3, finishes preparation.
Wherein Fig. 4 a is the structure that adopts pressure welding mode completing substrate combination, and Fig. 4 b is the structure that adopts the combination of through hole technology completing substrate, and Fig. 4 c is the back side that drive circuit directly is produced on substrate, finishes structural representation of the present invention in conjunction with the through hole technology.
The above; only be embodiments of the invention; be not that the present invention is done any pro forma restriction; every any simple modification, equivalent variations and modification of above embodiment being done according to the technology of the present invention essence; still belong in the technical solution of the present invention scope, so protection scope of the present invention is when being as the criterion with claims.
Claims (9)
1. the preparation method of a LED flat panel display unit comprises following steps:
Step 1: get a substrate, make circuit and metal salient point at substrate;
Step 2: adopt reverse installation process, a plurality of led chips are produced on the substrate, dwindle the spacing between the led chip; This led chip is realized being electrically connected by metal salient point with the circuit on the substrate;
Step 3: get one and drive substrate;
Step 4: the substrate that will be manufactured with led chip is interconnected with the driving electrical property of substrate, finishes preparation.
2. the preparation method of LED flat panel display unit according to claim 1, wherein a plurality of led chips form the led chip arrays.
3. the preparation method of LED flat panel display unit according to claim 2, wherein the spacing between the led chip is 10-100 μ m.
4. the preparation method of LED flat panel display unit according to claim 3, wherein the led chip in the led chip array is single wavelength or multi-wavelength chip.
5. the preparation method of LED flat panel display unit according to claim 1, wherein the material of substrate is silicon chip, pottery, wiring board or metallic plate.
6. the preparation method of LED flat panel display unit according to claim 5, wherein the circuit on the substrate 1 with the anodic bonding of every row led chip in the led array together, the negative electrode of every row led chip links together.
7. the preparation method of LED flat panel display unit according to claim 1, the drive circuit that wherein drives on the substrate is active drive circuit, or the passive type drive circuit.
8. the preparation method of LED flat panel display unit according to claim 1, wherein driving substrate is to be connected with the substrate that is manufactured with led chip by pressure welding or through hole.
9. the preparation method of LED flat panel display unit according to claim 8 wherein drives the one side that drive circuit on the substrate directly is produced on substrate, realizes being electrically connected of led chip on described drive circuit and the substrate another side by via process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104495150A CN102931330A (en) | 2012-11-12 | 2012-11-12 | Preparation method of LED (light-emitting diode) flat-panel display unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104495150A CN102931330A (en) | 2012-11-12 | 2012-11-12 | Preparation method of LED (light-emitting diode) flat-panel display unit |
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| CN102931330A true CN102931330A (en) | 2013-02-13 |
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| CN2012104495150A Pending CN102931330A (en) | 2012-11-12 | 2012-11-12 | Preparation method of LED (light-emitting diode) flat-panel display unit |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103426379A (en) * | 2013-09-05 | 2013-12-04 | 潍坊博瑞光电科技有限公司 | High pixel density LED display panel and manufacturing method thereof |
| CN103761929A (en) * | 2014-01-08 | 2014-04-30 | 江苏新广联绿色照明工程有限公司 | Silica-based unit board of LED display screen |
| CN104167411A (en) * | 2014-08-19 | 2014-11-26 | 中国科学院半导体研究所 | LED array structure |
| CN104183584A (en) * | 2014-08-19 | 2014-12-03 | 中国科学院半导体研究所 | LED array light source structure |
| CN104183586A (en) * | 2014-09-02 | 2014-12-03 | 中国科学院半导体研究所 | Light-emitting diode display array of vertical structure |
| CN104183572A (en) * | 2014-08-21 | 2014-12-03 | 中国科学院半导体研究所 | Packaging support used for light-emitting diode array |
| CN106782137A (en) * | 2017-03-31 | 2017-05-31 | 深圳市德彩光电有限公司 | The LED display of small spacing |
| CN109037263A (en) * | 2017-06-09 | 2018-12-18 | 美商晶典有限公司 | Micro- light-emitting diode display module and its manufacturing method with light-transmitting substrate |
| CN109461386A (en) * | 2019-01-04 | 2019-03-12 | 京东方科技集团股份有限公司 | Display device |
| CN110010016A (en) * | 2019-03-28 | 2019-07-12 | 苏州佳世达电通有限公司 | Display panel |
| CN110767104A (en) * | 2018-07-25 | 2020-02-07 | 深圳Tcl新技术有限公司 | LED display screen and preparation method thereof |
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| CN101707031A (en) * | 2009-12-01 | 2010-05-12 | 北京利亚德电子科技有限公司 | LED TV display panel device |
| US20110309378A1 (en) * | 2009-12-09 | 2011-12-22 | Nano And Advanced Materials Institute Limited | Method for manufacturing a monolithic led micro-display on an active matrix panel using flip-chip technology and display apparatus having the monolithic led micro-display |
| CN102760408A (en) * | 2012-07-18 | 2012-10-31 | 刘纪美 | LED (Light-Emitting Diode) micro-display device based on active/passive combined addressing |
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2012
- 2012-11-12 CN CN2012104495150A patent/CN102931330A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101707031A (en) * | 2009-12-01 | 2010-05-12 | 北京利亚德电子科技有限公司 | LED TV display panel device |
| US20110309378A1 (en) * | 2009-12-09 | 2011-12-22 | Nano And Advanced Materials Institute Limited | Method for manufacturing a monolithic led micro-display on an active matrix panel using flip-chip technology and display apparatus having the monolithic led micro-display |
| CN102760408A (en) * | 2012-07-18 | 2012-10-31 | 刘纪美 | LED (Light-Emitting Diode) micro-display device based on active/passive combined addressing |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103426379A (en) * | 2013-09-05 | 2013-12-04 | 潍坊博瑞光电科技有限公司 | High pixel density LED display panel and manufacturing method thereof |
| CN103761929A (en) * | 2014-01-08 | 2014-04-30 | 江苏新广联绿色照明工程有限公司 | Silica-based unit board of LED display screen |
| CN104167411A (en) * | 2014-08-19 | 2014-11-26 | 中国科学院半导体研究所 | LED array structure |
| CN104183584A (en) * | 2014-08-19 | 2014-12-03 | 中国科学院半导体研究所 | LED array light source structure |
| CN104183572A (en) * | 2014-08-21 | 2014-12-03 | 中国科学院半导体研究所 | Packaging support used for light-emitting diode array |
| CN104183586B (en) * | 2014-09-02 | 2017-04-05 | 中国科学院半导体研究所 | A kind of preparation method of vertical structure light-emitting diode array of display |
| CN104183586A (en) * | 2014-09-02 | 2014-12-03 | 中国科学院半导体研究所 | Light-emitting diode display array of vertical structure |
| CN106782137A (en) * | 2017-03-31 | 2017-05-31 | 深圳市德彩光电有限公司 | The LED display of small spacing |
| CN109037263A (en) * | 2017-06-09 | 2018-12-18 | 美商晶典有限公司 | Micro- light-emitting diode display module and its manufacturing method with light-transmitting substrate |
| CN110767104A (en) * | 2018-07-25 | 2020-02-07 | 深圳Tcl新技术有限公司 | LED display screen and preparation method thereof |
| CN110767104B (en) * | 2018-07-25 | 2021-09-28 | 深圳Tcl新技术有限公司 | LED display screen and preparation method thereof |
| CN109461386A (en) * | 2019-01-04 | 2019-03-12 | 京东方科技集团股份有限公司 | Display device |
| WO2020140727A1 (en) * | 2019-01-04 | 2020-07-09 | 京东方科技集团股份有限公司 | Led display device |
| US11302247B2 (en) * | 2019-01-04 | 2022-04-12 | Beijing Boe Display Technology Co., Ltd. | LED display device |
| CN110010016A (en) * | 2019-03-28 | 2019-07-12 | 苏州佳世达电通有限公司 | Display panel |
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Application publication date: 20130213 |