CN102931255B - A kind of back contact solar cell and manufacture method thereof - Google Patents
A kind of back contact solar cell and manufacture method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 239000004065 semiconductor Substances 0.000 claims abstract description 80
- 239000007772 electrode material Substances 0.000 claims abstract description 58
- 230000004888 barrier function Effects 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 17
- 238000005516 engineering process Methods 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 9
- 239000006117 anti-reflective coating Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 2
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 4
- 210000004027 cell Anatomy 0.000 description 75
- 239000010410 layer Substances 0.000 description 31
- 229910052782 aluminium Inorganic materials 0.000 description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 18
- 239000000203 mixture Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000004411 aluminium Substances 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000000243 solution Substances 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000002002 slurry Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical group [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000006386 neutralization reaction Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- FGUJWQZQKHUJMW-UHFFFAOYSA-N [AlH3].[B] Chemical compound [AlH3].[B] FGUJWQZQKHUJMW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 150000003378 silver Chemical class 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- YOMVJXWHNWGAMU-UHFFFAOYSA-N [Ag]#P Chemical compound [Ag]#P YOMVJXWHNWGAMU-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
A manufacture method for back contact solar cell, comprising: provide semi-conductive substrate; Insulating barrier is formed at the described Semiconductor substrate back side; Described surface of insulating layer prints the first electrode material and the second electrode material; This substrate is sintered, the first electrode material and the second electrode material is made to penetrate described insulating barrier, and with substrate back ohmic contact, form the first electrode and the second electrode, wherein, described first electrode and the second electrode distribute alternately on described insulating barrier, and the first electrode is different with the doping type of the second electrode.The manufacture method of solar cell provided by the invention forms insulating barrier and the material that prints electrode at the back surface of Semiconductor substrate in advance, only by once sintered, just form the first electrode and second electrode of mutually insulated at the Semiconductor substrate back side by insulating barrier, therefore, this way realizing back contact solar cell differently doped regions and electrode contact is with low cost, realize technique simple, be applicable to large-scale production.
Description
Technical field
The present invention relates to area of solar cell, particularly relate to a kind of back contact solar cell and preparation method thereof.
Background technology
Business-like conventional silicon solar cell, emitter and emitter electrode are all positioned at battery front side.Because solar level silicon materials minority diffusion length is less, emitter region is positioned at the collection efficiency that battery front side is conducive to improving charge carrier.But this kind of structure has its limitation: although gate line electrode area occupied very little (being about 8%), can still block part sunlight, makes battery effective area of shining light reduce; And during component package, needs are coated with another block battery received by the tin band back side from the face bonding of one piece of battery, and this connected mode makes the difficulty of automated production strengthen.For this reason, researcher transfers to cell backside front electrode, develops the back contact solar cell that many structures are different.
Back contact solar cell refers to that the emitter electrode of battery and base electrode are all positioned at a kind of solar cell of cell backside.Back contact solar cell has many good qualities: 1. cell conversion efficiency is high.Owing to reducing or completely eliminating the shading loss of front gate line electrode, thus improve battery efficiency; 2. easily assemble.Adopt brand-new component package pattern to carry out coplanar connection, both reduced the interval between cell piece, improve packaging density, in turn simplify manufacture craft, reduced encapsulation difficulty; 3. more attractive in appearance.The front of battery is homogeneous, attractive in appearance, meets the esthetic requirement of consumer.Back contact solar cell can be divided into two classes: 1. carry on the back junction battery.PN junction is positioned at battery back surface, and emitter region electrode and base electrode are also correspondingly positioned at cell backside, as IBC battery.2. front junction battery.PN junction is still positioned at battery front surface, just by the mode such as punching on cell piece, the charge carrier collected is delivered on the contact electrode at the back side, as EWT battery at front surface.
Along with the development of back contact solar cell, there is a kind of aluminum alloy junction autoregistration back contact solar cell, as shown in Figure 1, N-type substrate material 101 selected by this kind of solar cell, one deck N-type heavy doping surface field is all covered in the front and rear surfaces of backing material 101, as the front-surface field 102 in Fig. 1 and field, rear surface 103, then at back surface by silk-screen printing technique with aluminium paste state deposit P type heavy doping aluminum strip 105, the P type heavy doping aluminum strip of deposit neutralizes part N-type heavy doping surface field, with silicon substrate 101 rear-face contact, and then form positive Ohm contact electrode by sintering process with silicon substrate, the silicon substrate 101 that oxide layer 104 covers aluminum strip and exposed part is formed afterwards at whole back surface, in order to make negative contact metal layer 106 can deposit in oxide layer, must come out in the N-type silicon substrate being covered with oxide layer in aluminum strip gap, therefore the oxide layer on silicon substrate back surface silicon layer is optionally etched away with hydrofluoric acid, self-registered technology is adopted to form negative Ohm contact electrode 106 afterwards again, finally just forming double-layer structure, negative Ohm contact electrode, and wherein negative Ohm contact electrode covers the back side of whole battery, this kind of back contact solar cell is except the various advantages with typical back contact solar cell, its back surface relatively flat, there is the effect of partial reflector, thus add the refraction of light, improve the efficiency of solar cell.
In actual production process, inventor finds, the special structure of this kind of aluminum alloy junction autoregistration back contact solar cell is while raising solar battery efficiency, there is the shortcoming of implementation procedure difficulty, be specially: the manufacture method of this solar cell needs first to form N-type heavy doping surface field at the whole silicon substrate back side, then when the heavily doped positive Ohm contact electrode of formation P type, need the P type heavy doping slurry first utilizing aluminium doping to be formed to neutralize the N-type heavy doping surface field of part, be difficult to realize technology controlling and process.
Summary of the invention
In view of this, the invention provides a kind of back contact solar cell and preparation method thereof, to eliminate in P type heavy doping Ohm contact electrode and N-type heavy doping surface field in the process forming Ohm contact electrode and step, make the manufacture craft of solar cell be easy to control.
The invention discloses a kind of back contact solar cell and preparation method thereof
A kind of back contact solar cell, comprising:
Semiconductor substrate;
Be positioned at the insulating barrier at the described Semiconductor substrate back side;
To be positioned on described surface of insulating layer and to penetrate this insulating barrier, and with the first electrode of Semiconductor substrate back surface ohmic contacts and the second electrode, wherein, the first electrode and the second electrode distribute alternately on described insulating barrier, and the first electrode is different with the doping type of the second electrode.
Preferably, this solar cell also comprises, and be positioned at the front-surface field of described Semiconductor substrate front surface, and the doping type of described front-surface field is identical with the doping type of described Semiconductor substrate.
Preferably, this solar cell also comprises, and is positioned at the antireflective coating on described front-surface field surface.
Preferably, this solar cell also comprises, the first integrated package group be electrically connected with the first electrode, and the second integrated package group be electrically connected with the second electrode.
Preferably, described first integrated package group is positioned at a side of this rear surface of solar cell, and described second integrated package group is positioned at another side of this rear surface of solar cell.
A manufacture method for back contact solar cell, comprising:
Semi-conductive substrate is provided;
Insulating barrier is formed at the described Semiconductor substrate back side;
Described surface of insulating layer prints the first electrode material and the second electrode material;
This substrate is sintered, the first electrode material and the second electrode material is made to penetrate described insulating barrier, and with substrate back ohmic contact, form the first electrode and the second electrode, wherein, described first electrode and the second electrode distribute alternately on described insulating barrier, and the first electrode is different with the doping type of the second electrode.
Preferably, after the described Semiconductor substrate back side forms insulating barrier, before described surface of insulating layer prints the first electrode material and the second electrode material, also comprise: form groove at described surface of insulating layer, described groove penetrates insulating barrier, and the position of described groove overlaps with the printing position of described first electrode and/or described second electrode.
Preferably, the manufacture method of this solar cell also comprises, and adopts diffusion technology to form front-surface field in described Semiconductor substrate front.
Preferably, the manufacture method of this solar cell also comprises, and the surface of front-surface field forms antireflective coating.
Compared with prior art, technique scheme has the following advantages:
A kind of back contact solar cell that the embodiment of the present invention provides and preparation method thereof, the forming process of the Ohm contact electrode of this kind of solar cell back surface no longer needs the neutralization procedure between the heavy doping of P type and N-type heavy doping.Detailed process is: first form insulating barrier at the back surface of Semiconductor substrate; Then print the first electrode material and the second electrode material at surface of insulating layer, two kinds is passivation between electrode material and insulating barrier; Last again by once sintered, make the first electrode material and the second electrode material penetrate insulating barrier, and enter in Semiconductor substrate back surface, form the first electrode and the second electrode.As can be seen here, the method for this kind of formation solar cell no longer needs the technology controlling and process of the different doped regions neutralization carried out between electrode material from Semiconductor substrate, makes the manufacturing process of solar cell be more suitable for large-scale production.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the profile of a kind of aluminum alloy junction autoregistration back contact solar cell of the prior art;
The profile of a kind of solar cell that Fig. 2 provides for the embodiment of the present invention;
The back electrode figure of a kind of solar cell that Fig. 3 provides for the embodiment of the present invention;
The profile of a kind of method for manufacturing solar battery that Fig. 4-Fig. 9 provides for another embodiment of the present invention.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when describing the embodiment of the present invention in detail; for ease of explanation; represent that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, it should not limit the scope of protection of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
Just as described in the background section, the manufacturing process of back contact solar cell in the prior art, when solar cell back surface forms Ohm contact electrode, need the technique mutually neutralized between control P type heavy doping and N-type heavy doping, the more difficult control of realization of this kind of technique.
Inventor studies discovery, the reason forming the problems referred to above is, back contact solar cell of the prior art, when back surface forms positive Ohm contact electrode (P type heavily doped region), this kind of P type heavy doping slurry needs the N-type heavy doping surface field first neutralizing part back surface, then just can enter in Semiconductor substrate back surface, form Ohm contact electrode, and for the heavy doping of P type and the heavily doped neutralization of N-type, need certain technology controlling and process, to reach desirable neutralization, this kind of technology controlling and process is for the making of existing solar cell, there is certain technology difficulty.
Inventor also finds, the back contact solar cell of prior art is when back surface forms negative Ohm contact electrode (N-type heavily doped region), and technical process is also very complicated.Be specially: first form spaced positive Ohm contact electrode, then in order to just ensure, mutually insulated between negative Ohm contact electrode, oxide layer is formed on the exposed part surface of positive Ohm contact electrode surface and silicon substrate, afterwards in order to ensure that this oxide layer can not have an impact to the electrical contact of negative Ohm contact electrode and silicon substrate, need the removing of the oxide layer of surface of silicon etching, the negative Ohm contact electrode that last formation more directly contacts with silicon substrate, visible, existing back contact solar cell is when forming negative Ohm contact electrode, extra etching technics is needed to remove the oxide layer in positive Ohm contact electrode gap, so that follow-up negative Ohm contact electrode is set up with silicon substrate and is electrically connected, implementation procedure technique very complicated, be not suitable with the requirement of large-scale production.
In view of this, the invention discloses a kind of new back contact solar cell and preparation method thereof, to solve the problem, specifically describe see following examples.
Embodiment one
Present embodiments provide a kind of back contact solar cell, as shown in Figure 2, Fig. 2 is the profile of this back contact solar cell to its structure, is described in detail to the structure of this back contact solar cell below in conjunction with Fig. 2.
This back contact solar cell comprises:
Semiconductor substrate 201;
It should be noted that, the material of the Semiconductor substrate in the present embodiment can be monocrystalline, also can be polycrystalline, and the doping type of this Semiconductor substrate can adulterate for N-type, also can adulterate for P type.Although there is described herein several examples that can form semiconductor substrate materials, all the spirit and scope of the present invention can be fallen into as any material of Semiconductor substrate.
Be positioned at the insulating barrier 204 of described Semiconductor substrate 201 back surface;
Described insulating barrier 204 can be silicon oxide layer, also can be the lamination of silicon nitride layer, silicon oxynitride layer or silicon nitride layer and silicon oxide layer composition.Although there is described herein several examples of insulating barrier, all fall into the spirit and scope of the present invention by the insulating barrier of any any structure that can form as insulating layer material.
With the first electrode 207 and the second electrode 208 of Semiconductor substrate back surface ohmic contacts, and the first electrode 207 and the second electrode 208 distribute alternately on described insulating barrier;
Described first electrode 207 and the second electrode 208 are formed by carrying out the first electrode material 205 and the second electrode material 206 that are printed on the Semiconductor substrate back side sintering.Described first electrode material 205 is different with the doping type of the second electrode material 206, is respectively the heavy doping of P type and N-type heavy doping.In the present embodiment, the first electrode material 205 is aluminium paste or the mixture containing aluminium paste, is described respectively below to the two.
When first electrode material 205 is aluminium paste, aluminium is as triad, by sintering, the heavy doping of P type can be realized in Semiconductor substrate 201, and containing penetrability material in aluminium paste in the present embodiment, described penetrability substance, when high-temperature process, penetrates the insulating barrier 204 at the Semiconductor substrate back side, thus makes aluminium paste and Semiconductor substrate electrical contact form the first electrode 207.
When first electrode material 205 is the mixture containing aluminium paste, this mixture is aluminium silicon mixture or aluminium boron mixture, and comprises penetrability material equally in mixture.For aluminium silicon mixture, because aluminium is as triad, by sintering, the heavy doping of P type can be realized in Semiconductor substrate 201, and the penetrability substance in aluminium silicon mixture is when high-temperature process, penetrate the insulating barrier 204 at the Semiconductor substrate back side, thus make aluminium silicon mixture and Semiconductor substrate electrical contact form the first electrode 207; For aluminium silicon mixture, because aluminium and boron are triad, by sintering, the heavy doping of P type can be realized equally in Semiconductor substrate 201, and the penetrability substance in aluminium boron mixture is when high-temperature process, penetrate the insulating barrier 204 at the Semiconductor substrate back side, thus make aluminium boron mixture and Semiconductor substrate electrical contact form the first electrode 207.
It should be noted that; the present invention does not limit and realizes the heavily doped material of P type; namely, except the mixture of aluminium paste described above and aluminium paste, other can form the heavily doped metal of P type in the semiconductor substrate and containing metal mixture all falls into protection scope of the present invention.
The second electrode material 206 in the present embodiment is for comprising the silver slurry of dopant and penetrability material, dopant in this silver slurry is N-type dopant, its doped chemical is phosphorus or other pentad, and its dopant dose is enough follow-up forms N-type heavy doping in the semiconductor substrate.Penetrability substance in this silver slurry, when high-temperature process, penetrates the insulating barrier 204 at the Semiconductor substrate back side, forms the second electrode 208 with Semiconductor substrate electrical contact.The present invention does not limit yet and realizes the heavily doped material of N-type, and except the silver slurry comprising dopant and penetrability material, other can form the heavily doped metal of N-type in the semiconductor substrate and containing metal mixture all falls into protection scope of the present invention.
This back contact solar cell also comprises:
Be positioned at the front-surface field 202 of described Semiconductor substrate front surface; Described front-surface field is identical with the doping type of Semiconductor substrate 201, form height with Semiconductor substrate to tie, its Main Function is by forming electrostatic field on height junction interface, stops minority carrier to move to solar cell surface, thus reaches the object reducing recombination-rate surface.
Be positioned at the antireflective coating 203 on described front-surface field 202 surface; The material of antireflective coating is generally silicon nitride, for reducing the reflection of sunlight in solar cell surface, improves solar cell to the absorptivity of sunlight.
This back contact solar cell can also comprise: the first integrated package group 301 be electrically connected with the first electrode, and the second integrated package group 302 to be electrically connected with the second electrode, its back side figure as shown in Figure 3, described the first spaced electrode 207 is electrically connected by described first integrated package group, and described the second spaced electrode 208 is electrically connected by described second integrated package group, and the first integrated package group 301 and the second integrated package group 302 are as the output electrode of solar cell, the both sides of separation rear surface of solar cell.Described first integrated package group 301 is positioned at a side of this rear surface of solar cell, and described second integrated package group 302 is positioned at another side of this rear surface of solar cell.
It should be noted that, described first integrated package group and the second integrated package group comprise several integrated packages respectively, several adjacent first electrodes are electrically connected by the integrated package of described first integrated package group, and several adjacent second electrodes are electrically connected by the integrated package of described second integrated package group.The quantity of the integrated package that the first integrated package group and the second integrated package group comprise depends on the requirement etc. of manufacture craft, and the present invention does not all limit the number of electrodes that the first integrated package group is connected with quantity and each integrated package of the integrated package in the second integrated package group.
Embodiment two
Corresponding back contact solar cell provided by the invention, present embodiment discloses the manufacture method of this kind of back contact solar cell, as shown in Fig. 4-Fig. 9, in the present embodiment with Semiconductor substrate size for 156mm*156mm, resistivity is 1.5 Ω cm, thickness is the n type single crystal silicon sheet of 180 μm is that example is carried out, and is described the manufacture method of back contact solar cell provided by the invention.
It should be noted that; it is n type single crystal silicon sheet that the present invention does not limit Semiconductor substrate; the Semiconductor substrate of other types, as N-type polycrystalline silicon sheet, p type single crystal silicon sheet or anyly all can fall into protection scope of the present invention as the material of back contact solar cell Semiconductor substrate.
The manufacture method of this kind of back contact solar cell, comprises the following steps:
As shown in Figure 4, semi-conductive substrate 401 is provided;
Texturing is carried out to described Semiconductor substrate front and back simultaneously.In embodiments of the present invention, texturing adopts wet chemical etching process, texturing solution is preferably the NaOH deionized water solution that weight percentage is 0.5% ~ 5%, temperature is preferably 75C ~ 90 ° C, there is pyramid structure in the front at semiconductor after texturing, as anti-reflection structure, described anti-reflection structure is not shown in the diagram.
It should be noted that, textured method is carried out to Semiconductor substrate and is not limited in wet chemical etching process, other can be used for realizing textured method, as reactive ion-etching, laser irradiation, Mechanical lithography method etc. all can be used for the texturing that the present invention realizes semiconductor substrate surface.
Front-surface field 402 is formed in Semiconductor substrate 401 front;
Concrete, the present embodiment forms front-surface field 402 and is divided into two processes in Semiconductor substrate 401 front: first, as shown in Figure 5, carry out phosphorus diffusion on Semiconductor substrate 401 surface.Carry out tubular type diffusion with phosphorus oxychloride liquid source, diffusion way adopts Double side diffusion, and to reach better gettering effect, the square resistance after diffusion is at 40 Ω/square ~ 80 Ω/square, and junction depth is at 0.2 μm ~ 0.5 μm.Then, as shown in Figure 6, acid solution polishing and cleaning are carried out to Semiconductor substrate 401 back side; The acid solution that polishing adopts is the mixed solution of nitric acid, hydrofluoric acid and deionized water, and the volume ratio of nitric acid, hydrofluoric acid and deionized water is preferably (4 ~ 5): (1 ~ 2): 1; In acid solution, the temperature range of polishing is preferably 10 DEG C ~ 20 DEG C.
It should be noted that, the mode forming front-surface field at semiconductor substrate surface is not limited in Double side diffusion, and other can realize the mode forming front-surface field at semiconductor substrate surface, as ion implantation mode etc. all falls into protection scope of the present invention.
As shown in Figure 7, form antireflection layer 403 in described Semiconductor substrate 401 front, form insulating barrier 404 at the described Semiconductor substrate back side;
Adopt pecvd process to form antireflection layer 403 in Semiconductor substrate front, described antireflection layer 403 is silicon nitride layer, and the thickness of this silicon nitride layer is preferably 82nm, and refractive index is preferably 2.Form insulating barrier 404 at the Semiconductor substrate back side and also adopt pecvd process, described insulating barrier 404 is also silicon nitride layer, and the thickness of this silicon nitride layer is preferably 100nm, and refractive index is preferably 2.3.
It should be noted that, the present invention forms the mode of antireflective coating and is not limited in pecvd process in Semiconductor substrate front, and other may be used for the mode of film deposition and equipment all falls into protection scope of the present invention.
As shown in Figure 8, described insulating barrier prints the first electrode material 405 and the second electrode material 406;
The first electrode material 405 in the present embodiment is the aluminium paste containing frit, and the second electrode material 406 is starch containing the phosphorus silver of mixing of frit, and adopts screen printing technique that the first electrode material 405 and the second electrode material 406 are printed on the back side of Semiconductor substrate.The main part of printed pattern is the rectangular electrode of grid finger-like, and electrode number is preferably 65, and electrode length is preferably 130mm, and width is preferably 50 μm, and electrode centers spacing is preferably 2mm.
As shown in Figure 9, sinter this Semiconductor substrate, sintering range is preferably 700 DEG C ~ 900 DEG C, makes the first electrode material 405 and the second electrode material 406 penetrate described insulating barrier 404, and with Semiconductor substrate 401 back surface ohmic contacts, form the first electrode 407 and the second electrode 408; As shown in Figure 3, the first electrode 407 comes together in a side of rear surface of solar cell, forms the first integrated package group; Second electrode 408 comes together in another side of rear surface of solar cell, forms the second integrated package group.
It should be noted that, utilize the penetrability of the first electrode material 405 and the second electrode material 406 itself in the present embodiment, concrete, the frit in the first electrode material and the second electrode material has the ability penetrating silicon nitride layer.By high temperature sintering, make the first electrode material 405 and the second electrode material 406 penetrate insulating barrier 404 and set up ohmic contact with Semiconductor substrate 401.But in other embodiments of the invention, the mode of fluting can also be adopted to make the first electrode material 405 and the second electrode material 406 penetrate insulating barrier 404, be specially: adopt Nd/YAG laser violet laser to slot on the insulating barrier 404 at the Semiconductor substrate back side, the position of groove overlaps with the position of follow-up silk screen printing first electrode material and/or the second electrode material, the length of groove is preferably 128mm, width is preferably 40 μm, and the center distance of groove is preferably 2mm; And then utilize sintering, set up the ohmic contact of the first electrode material 405 and the second electrode material 406 and Semiconductor substrate, form the first electrode 407 and the second electrode 408.
As can be seen here, the manufacture method of solar cell provided by the invention forms insulating barrier by the back surface in advance in Semiconductor substrate, then formed spaced at surface of insulating layer by screen printing technique and there is not the first electrode material and second electrode material of overlapping part, with once sintered, the penetrability of slurry itself is utilized to penetrate insulating barrier, the first electrode and the second electrode is formed at the Semiconductor substrate back side, these two kinds different electrodes utilize insulating barrier to be electrically insulated, namely by once sintered realize the electric insulation of two kinds of electrodes while, also form the ohmic contact of electrode and Semiconductor substrate.Therefore this way realizing back contact solar cell differently doped regions and electrode contact is with low cost, realizes technique simple, is applicable to large-scale production.
Two kinds of electrodes of this kind of back contact solar cell back surface are in a horizontal plane, are single layer structure at the Semiconductor substrate back side, directly by integrated package, two kinds of electrodes can be set up electrical connection separately in both sides.In addition, the level height of two kinds of electrodes of this kind of rear surface of solar cell is consistent, back surface entirety defines the pattern of smooth planar, and namely this kind of solar cell can continue to keep desirable sunken light and less compound area, to ensure the absorption efficiency of solar cell to sunlight.
The above embodiment is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention.
Although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention.Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (8)
1. a back contact solar cell, is characterized in that, comprising:
Semiconductor substrate;
Be positioned at the insulating barrier at the described Semiconductor substrate back side;
To be positioned on described surface of insulating layer and to penetrate this insulating barrier, and with the first electrode of Semiconductor substrate back surface ohmic contacts and the second electrode, wherein, the first electrode and the second electrode distribute alternately on described insulating barrier, and the first electrode is different with the doping type of the second electrode;
Described first electrode and the second electrode are formed by carrying out sintering to the first electrode material and the second electrode material that are printed on the Semiconductor substrate back side, and wherein, described first electrode material and the second electrode material comprise penetrability material; Wherein, by once sintered realize the electric insulation of described first electrode and the second electrode while, also form the ohmic contact of described first electrode and the second electrode and Semiconductor substrate;
The the first integrated package group be electrically connected with the first electrode, and the second integrated package group be electrically connected with the second electrode.
2. solar cell according to claim 1, is characterized in that, also comprises, and be positioned at the front-surface field of described Semiconductor substrate front surface, and the doping type of described front-surface field is identical with the doping type of described Semiconductor substrate.
3. solar cell according to claim 2, is characterized in that, also comprises, and is positioned at the antireflective coating on described front-surface field surface.
4. solar cell according to claim 1, is characterized in that, described first integrated package group is positioned at a side of this rear surface of solar cell, and described second integrated package group is positioned at another side of this rear surface of solar cell.
5. a manufacture method for back contact solar cell, is characterized in that, comprising:
Semi-conductive substrate is provided;
Insulating barrier is formed at the described Semiconductor substrate back side;
Described surface of insulating layer prints the first electrode material and the second electrode material; Described first electrode material and the second electrode material comprise penetrability material;
This substrate is sintered, the first electrode material and the second electrode material is made to penetrate described insulating barrier, and with substrate back ohmic contact, form the first electrode and the second electrode, wherein, described first electrode and the second electrode distribute alternately on described insulating barrier, and the first electrode is different with the doping type of the second electrode; The the first integrated package group be electrically connected with the first electrode, and the second integrated package group be electrically connected with the second electrode;
Wherein, by once sintered realize the electric insulation of described first electrode and the second electrode while, also form the ohmic contact of described first electrode and the second electrode and Semiconductor substrate.
6. manufacture method according to claim 5, it is characterized in that, after the described Semiconductor substrate back side forms insulating barrier, before described surface of insulating layer prints the first electrode material and the second electrode material, also comprise: form groove at described surface of insulating layer, described groove penetrates insulating barrier, and the position of described groove overlaps with the printing position of described first electrode and/or described second electrode.
7. method according to claim 5, is characterized in that, also comprises employing diffusion technology, forms front-surface field in described Semiconductor substrate front.
8. manufacture method according to claim 5, is characterized in that, the surface being also included in front-surface field forms antireflective coating.
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| TWI515852B (en) | 2013-05-01 | 2016-01-01 | 友達光電股份有限公司 | Active device substrate and manufacture method thereof |
| CN103794679B (en) * | 2014-01-26 | 2016-07-06 | 晶澳（扬州）太阳能科技有限公司 | A kind of preparation method of back contact solar cell |
| CN103811591B (en) * | 2014-02-27 | 2016-10-05 | 友达光电股份有限公司 | The preparation method of back contact solar battery |
| CN105679400B (en) * | 2016-01-22 | 2018-05-08 | 四川银河星源科技有限公司 | A kind of electrocondution slurry and preparation method for solar cell |
| CN105489710B (en) * | 2016-01-22 | 2018-05-29 | 四川银河星源科技有限公司 | A kind of production technology of all back-contact electrodes solar cell |
| CN106410039A (en) * | 2016-11-07 | 2017-02-15 | 大连理工大学 | Perovskite laminated solar cell and preparation method thereof |
| CN106784032A (en) * | 2016-12-02 | 2017-05-31 | 湖南红太阳光电科技有限公司 | Black silion cell of back of the body knot and preparation method thereof |
| CN106952971A (en) * | 2017-01-22 | 2017-07-14 | 泰州乐叶光伏科技有限公司 | IBC battery electrode forming methods based on silk-screen printing |
| CN107623050A (en) * | 2017-09-22 | 2018-01-23 | 常州天合光能有限公司 | Solar cell |
| CN114142790A (en) * | 2021-10-11 | 2022-03-04 | 苏州腾晖光伏技术有限公司 | Knapsack and power generation mechanism |
| CN115020510B (en) * | 2022-06-23 | 2023-05-23 | 华能大理风力发电有限公司洱源分公司 | Photovoltaic cell and preparation method thereof |
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