CN102929459B - A kind of metal dots remains the metal electrode method for making of few capacitance touch screen - Google Patents
A kind of metal dots remains the metal electrode method for making of few capacitance touch screen Download PDFInfo
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- CN102929459B CN102929459B CN201210361475.4A CN201210361475A CN102929459B CN 102929459 B CN102929459 B CN 102929459B CN 201210361475 A CN201210361475 A CN 201210361475A CN 102929459 B CN102929459 B CN 102929459B
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Abstract
The invention discloses the metal electrode method for making that a kind of metal dots remains few capacitance touch screen, comprise the following steps: on substrate, plate ito thin film layer; Ito thin film layer is coated with photoresist; Photoresist is exposed; Photoresist developing is hardened; Etching ito thin film layer; Remove photoresist; Splash-proofing sputtering metal layer on ito thin film layer; Coating secondary photoresist; To secondary photoresist single exposure; To secondary photoresist re-expose; Secondary photoresist developing is hardened; Etch metal layers, forms metal electrode figure; Remove secondary photoresist, form metal electrode.Method of the present invention can produce the combination electrode of metal level and ito thin film layer, even if the metal level on surface is scratched, it is disconnected to draw, electrode still can use, and invention increases the quality of electrode, the durability of intensifier electrode.
Description
Technical field
The present invention relates to electronic devices and components field, particularly a kind of metal dots remains the metal electrode method for making of few capacitance touch screen.
Background technology
Capacitance touch screen can realize multiple spot and touch sensible accurately, and structure is simple, transmittance is high, is the main flow direction of current display touch technology development.The touch sensible parts of capacitance touch screen are generally the induction matrix of multiple column electrode, the interlaced formation of row electrode, and column electrode and row electrode are arranged on the same face of a slice transparency carrier.The method for making of typical metal electrode comprises: the first step: metal-coated membrane; Second step: coating photoresist; 3rd step: exposure; 4th step: development, sclerosis; 5th step: etching metal; 6th step: remove photoresist; , form the metal electrode of the individual layer of design configuration at 7th: manual point (etching) kish point.Owing to more easily producing metal residual phenomenon in metal electrode manufacturing process, thus cause use manually more, and efficiency is low, is the bottleneck portion of production run.Retrieve for the problems referred to above, not yet find effective solution.
Summary of the invention
Object of the present invention is exactly be easier to produce metal dots for the surface that existing single-layer metal electrode exists thus cause use manually more, and efficiency is low, the bottleneck portion of production run, provides a kind of metal dots to remain the metal electrode method for making of few capacitance touch screen.
To achieve these goals, present invention employs following technical scheme:
Metal dots remains a metal electrode method for making for few capacitance touch screen, it is characterized in that, comprises the following steps:
(1), on substrate vacuum sputtering ito thin film layer, vacuum tightness: 0.01 ~ 0.5Pa, temperature: 220 ~ 350 DEG C, the thickness 5nm ~ 25nm of ito thin film layer;
(2), on ito thin film layer be coated with photoresist, ito thin film layer covered, the thickness 1000 ~ 2000nm of photoresist, within homogeneity 10%, preliminary drying temperature: 60 ~ 100 DEG C;
(3), photoresist is exposed, i.e. photoetching electrode pattern on a photoresist, conditions of exposure is: ultraviolet wavelength: 365nm, luminous flux: 60 ~ 150mj, the light shield of ITO electrode pattern is the film or chromium plate, the size of the film or chromium plate distance substrate: 20 microns ~ 200 microns;
(4), to photoresist develop and harden, development adopts organic base, concentration 1 ~ 4%, or NaOH, concentration 0.1 ~ 0.8%, temperature: 20 ~ 40 DEG C, 20 seconds ~ 300 seconds time, hardening temperature: 80 ~ 120 DEG C, 20 ~ 50 minutes time;
(5), etch ito thin film layer, form ito thin film layer electrode pattern, etching uses material: HCL10% ~ 20%+HNO32% ~ 10%, temperature: 40 ~ 60 DEG C, time: 120 ~ 600 seconds;
(6), remove photoresist, form ITO electrode, use material: organic solution, organic solution is: butyl carbitol 80 ~ 90%+ is hydramine 10% ~ 20%, in 5 minutes time, finally uses pure water rinsing;
(7), on ito thin film layer electrode pattern layer metal cladding, vacuum tightness 0.01 ~ 0.5Pa, temperature: 40 ~ 250 DEG C;
(8), on the metal layer secondary photoresist is coated with, the thickness 500 ~ 2000nm of secondary photoresist, within homogeneity 10%, preliminary drying temperature: 60 ~ 100 DEG C;
(9), secondary photoresist is exposed, i.e. photoetching electrode pattern on secondary photoresist, conditions of exposure is: ultraviolet wavelength: 365nm, luminous flux: 60 ~ 150mj, the light shield of metal electrode pattern is the film or chromium plate, the size 20 microns ~ 200 microns of the film or chromium plate distance substrate;
(10), to the electrode pattern after single exposure carrying out re-expose, (graphics request hides needing the photoresist of metallic circuit part, remainder printing opacity), conditions of exposure is: ultraviolet wavelength: 365nm, luminous flux: 60 ~ 150mj, the light shield of metal electrode pattern is the film or chromium plate, the size 20 microns ~ 200 microns of the film or chromium plate distance substrate;
(11), to secondary photoresist develop and harden, forming electrode pattern, development adopts organic base, concentration 1 ~ 4%, or NaOH, concentration 0.1 ~ 0.8%, temperature: 20 ~ 40 DEG C, 20 seconds ~ 300 seconds time, hardening temperature: 80 ~ 120 DEG C, 20 ~ 50 minutes time;
(12), etch metal layers, make metal level form metal electrode figure, use weak acid etch metal layers, etching period controls in 10 minutes, and in ten minutes, weak acid can not etch ito thin film layer, and weak acid forms: phosphoric acid 50% ~ 80%+ acetic acid 5% ~ 15%;
(13), remove secondary photoresist, form metal electrode, use material: organic solution, organic solution is: butyl carbitol 80% ~ 90%+ is hydramine 10% ~ 20%, the time: in 5 minutes, then uses pure water rinsing.
The invention has the advantages that:
Make by method of the present invention the phenomenon not occurring metal residual in the viewing area of the metal layer image made, enhance productivity, reduce cost of labor, get through the bottleneck problem in flow process.
accompanying drawing illustrates:
Fig. 1 is the schematic diagram of plating ito thin film layer of the present invention.
Fig. 2 is schematic diagram ito thin film layer of the present invention being coated with photoresist.
Fig. 3 is the schematic diagram that the present invention exposes photoresist.
Fig. 4 is the schematic diagram that the present invention is also hardened to photoresist developing.
Fig. 5 is the schematic diagram that the present invention etches ITO layer.
Fig. 6 is the schematic diagram that the present invention removes photoresist on ITO.
Fig. 7 is the schematic diagram of metal cladding of the present invention.
Fig. 8 is schematic diagram metal level of the present invention being coated with secondary photoresist.
Fig. 9 is the schematic diagram of the present invention to photoresist exposure on metal level.
Figure 10 is that the present invention carries out the schematic diagram of re-expose to the product after a photoetching.
Figure 11 is the schematic diagram that the present invention is also hardened to secondary photoresist developing on metal level.
Figure 12 is the schematic diagram of etch metal layers of the present invention.
Figure 13 is the schematic diagram that the present invention removes secondary photoresist on metal level.
embodiment:
Metal dots remains a metal electrode method for making for few capacitance touch screen, comprises the following steps:
The first step: as shown in Figure 1, on substrate 1 vacuum sputtering ito thin film layer 2, vacuum tightness: 0.01 ~ 0.5Pa, temperature: 220 ~ 350 DEG C, the thickness 5nm ~ 25nm of ito thin film layer 2;
Second step: as shown in Figure 2, ito thin film layer 2 is coated with photoresist 3, with running roller or rotary coating, photoresist thickness: 1000nm, within homogeneity 10%, and preliminary drying temperature: 80 DEG C;
3rd step: as shown in Figure 3, photoetching electrode pattern on photoresist 3, ultraviolet wavelength: 365nm, luminous flux: 100mj, the light shield 6 of ITO electrode pattern is the film or chromium plate, the size 100 microns of the film or chromium plate distance substrate;
4th step: as shown in Figure 4, develops to photoresist 3 and hardens, and forms electrode pattern, adopts organic base, concentration 2%, or NaOH, concentration 0.4%, temperature: 30 DEG C, 200 seconds time, hardening temperature: 100 DEG C, 40 minutes time;
5th step: as shown in Figure 5, etching ito thin film layer 2, form ITO electrode figure, etching uses material: HCL15%+HNO36%, temperature: 50 DEG C, time: 400 seconds;
6th step: as shown in Figure 6, remove photoresist 3, formed ITO electrode, use material: organic solution (with butyl carbitol (85%) and hydramine press (15%)), in 5 minutes time, finally use pure water rinsing;
7th step: as shown in Figure 7, vacuum sputtering metal cladding 4 on ito thin film layer 2, metal level 4 is molybdenums, vacuum tightness 0.2Pa, temperature: 40 DEG C, the thickness of the molybdenum contacted with ito thin film layer 3: 15nm; The thickness of the molybdenum of air surface: 40nm;
8th step: as shown in Figure 8, metal level 4 is coated with secondary photoresist 5, with running roller or rotary coating, and photoresist 5 thickness: 1000nm, within homogeneity 10%, preliminary drying temperature: 80 DEG C;
9th step: as shown in Figure 9, photoetching electrode pattern on secondary photoresist 5, ultraviolet wavelength: 365nm, luminous flux: 100mj, the light shield 6 of metal electrode pattern is the film or chromium plate, and the size 100 microns of the film or chromium plate distance substrate, now has metal dots 7 between metal electrode pattern;
Tenth step: as shown in Figure 10, electrode pattern after single exposure carries out re-expose, ultraviolet wavelength with new electrode pattern light shield 6: 365nm, luminous flux: 100mj, the light shield 6 of metal electrode pattern is the film or chromium plate, the size 100 microns of the film or chromium plate distance substrate;
11 step: as shown in figure 11, develops to secondary photoresist 5 and hardens, and forms electrode pattern, adopts organic base, concentration 2%, or NaOH, concentration 0.4%, temperature: 30 DEG C, 200 seconds time, hardening temperature: 100 DEG C, 40 minutes time;
12 step: as shown in figure 12, etch metal layers 4, forms metal electrode figure, use weak acid etch metal layers, etching period controls in 10 minutes, in ten minutes, weak acid can not etch ito thin film layer, and weak acid forms: phosphoric acid (50% ~ 80%), acetic acid (5% ~ 15%);
13 step: as shown in figure 13, removes secondary photoresist 5, forms metal electrode, uses material: organic solution (with butyl carbitol (85%) and hydramine press (15%)), in 5 minutes time, then use pure water rinsing.
Claims (1)
1. metal dots remains a metal electrode method for making for few capacitance touch screen, it is characterized in that, comprises the following steps:
(1), on substrate vacuum sputtering ito thin film layer, vacuum tightness: 0.01 ~ 0.5Pa, temperature: 220 ~ 350 DEG C, the thickness 5nm ~ 25nm of ito thin film layer;
(2), on ito thin film layer be coated with photoresist, ito thin film layer covered, the thickness 1000 ~ 2000nm of photoresist, within homogeneity 10%, preliminary drying temperature: 60 ~ 100 DEG C;
(3), photoresist is exposed, i.e. photoetching electrode pattern on a photoresist, conditions of exposure is: ultraviolet wavelength: 365nm, luminous flux: 60 ~ 150mj, the light shield of ITO electrode pattern is the film or chromium plate, the size of the film or chromium plate distance substrate: 20 microns ~ 200 microns;
(4), to photoresist develop and harden, development adopts organic base, concentration 1 ~ 4%, or NaOH, concentration 0.1 ~ 0.8%, temperature: 20 ~ 40 DEG C, 20 seconds ~ 300 seconds time, hardening temperature: 80 ~ 120 DEG C, 20 ~ 50 minutes time;
(5), etch ito thin film layer, form ito thin film layer electrode pattern, etching uses material: HCL10% ~ 20%+HNO
32% ~ 10%, temperature: 40 ~ 60 DEG C, time: 120 ~ 600 seconds;
(6), remove photoresist, form ITO electrode, use material: organic solution, organic solution is: butyl carbitol 80 ~ 90%+ is hydramine 10% ~ 20%, in 5 minutes time, finally uses pure water rinsing;
(7), on ito thin film layer electrode pattern layer metal cladding, vacuum tightness 0.01 ~ 0.5Pa, temperature: 40 ~ 250 DEG C;
(8), on the metal layer secondary photoresist is coated with, the thickness 500 ~ 2000nm of secondary photoresist, within homogeneity 10%, preliminary drying temperature: 60 ~ 100 DEG C;
(9), photoresist is exposed, i.e. photoetching electrode pattern on secondary photoresist, conditions of exposure is: ultraviolet wavelength: 365nm, luminous flux: 60 ~ 150mj, the light shield of metal electrode pattern is the film or chromium plate, the size 20 microns ~ 200 microns of the film or chromium plate distance substrate;
(10), re-expose is carried out on the electrode pattern after single exposure, conditions of exposure is: ultraviolet wavelength: 365nm, luminous flux: 60 ~ 150mj, the light shield of metal electrode pattern is the film or chromium plate, the size 20 microns ~ 200 microns of the film or chromium plate distance substrate;
(11), to secondary photoresist develop and harden, forming electrode pattern, development adopts organic base, concentration 1 ~ 4%, or NaOH, concentration 0.1 ~ 0.8%, temperature: 20 ~ 40 DEG C, 20 seconds ~ 300 seconds time, hardening temperature: 80 ~ 120 DEG C, 20 ~ 50 minutes time;
(12), etch metal layers, make metal level form metal electrode figure, use weak acid etch metal layers, etching period controls in 10 minutes, and weak acid forms: phosphoric acid 50% ~ 80%+ acetic acid 5% ~ 15%;
(13), remove secondary photoresist, form metal electrode, use material: organic solution, organic solution is: butyl carbitol 80% ~ 90%+ is hydramine 10% ~ 20%, the time: in 5 minutes, then uses pure water rinsing.
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| CN103294307B (en) * | 2013-05-09 | 2016-03-30 | 晟光科技股份有限公司 | A kind of OGS touch screen method for making of improvement |
| CN103324371A (en) * | 2013-05-20 | 2013-09-25 | 晟光科技股份有限公司 | Manufacturing method of OGS (one glass solution) capacitive touch screen |
| CN103425371B (en) * | 2013-07-25 | 2017-06-06 | 深圳华视光电有限公司 | A kind of double mask mode production technologies of capacitive touch screen |
| CN103395307B (en) * | 2013-07-29 | 2015-09-09 | 电子科技大学 | A kind of preparation method of internal electrode of chip-type electronic component |
| CN103857189A (en) * | 2013-12-10 | 2014-06-11 | 深圳市瑞丰光电子股份有限公司 | Method for manufacturing conducting circuit on insulating substrate and circuit board manufactured with method |
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| CN106158590A (en) * | 2016-08-01 | 2016-11-23 | 合肥佳瑞林电子技术有限公司 | A kind of TFT processing technique of Thin Film Transistor-LCD |
| CN106406023A (en) * | 2016-10-27 | 2017-02-15 | 无锡中微掩模电子有限公司 | Method for repairing defect in mask template picture by secondary exposure technology |
| CN112386399B (en) * | 2019-08-12 | 2023-05-09 | 湖南早晨纳米机器人有限公司 | Nanometer surgical robot and manufacturing method thereof |
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