CN102918428B - Reflection-blocking film, lens, optical assembly, objective lens, and optical apparatus - Google Patents
Reflection-blocking film, lens, optical assembly, objective lens, and optical apparatus Download PDFInfo
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- CN102918428B CN102918428B CN201180026803.9A CN201180026803A CN102918428B CN 102918428 B CN102918428 B CN 102918428B CN 201180026803 A CN201180026803 A CN 201180026803A CN 102918428 B CN102918428 B CN 102918428B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
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Abstract
Provided is a reflection-blocking film which, with respect to light in two regions, the ultraviolet and visible light regions, is optically stable, has low levels of light absorption, and is capable of efficaciously achieving prescribed reflection blocking. The reflection-blocking film comprises a configuration which forms, on a transparent substrate, thin films of at least six layers, in order as follows counting from the atmosphere side toward the substrate: a first layer, a second layer, a third layer, a fourth layer, a fifth layer, and a sixth layer. Counting from the atmosphere side, odd-numbered thin films counting from the atmosphere are low-refraction films, and even-numbered thin films are either low-refraction films or medium-refraction films which have a higher refraction than the low-refraction films. With the refraction of the medium-refraction films and of the low-refraction films designated NM and NL respectively in a central wavelength Lambda0, these values satisfy a prescribed formula, and further satisfy a prescribed formula in an ultraviolet wavelength Lambda1 and a visible wavelength Lambda2.
Description
Technical field
The present invention relates to antireflection film, employ the lens of this antireflection film, optical system, object lens and employ the optical device of this optical system.
Background technology
As the antireflection film of ultraviolet light in the past, propose the antireflection film that patent documentation 1 is recorded.This antireflection film is following film: on transparency carrier face, alternately formation comprises Al
2o
3the intermediate-index layer of film and comprise MgF
2low-index layer and be set to 4 layers ~ 7 layers, at wavelength 248nm(KrF excimer laser wavelength) and wavelength (such as: He-Ne optical maser wavelength 633nm) these two wavelength places in addition prevent reflection.In addition, in patent documentation 2, propose the film of stacked 7 layers, this film be there is the broad reflectance of less than 0.6% in the scope of wavelength 350nm to wavelength 800nm prevent film.
Carry out in the optical devices processed at use laser, need to carry out the observation in the visible range (being ultraviolet region or infrared region as required) of wavelength 400nm ~ 700nm simultaneously, and the optical maser wavelength of carrying out processing, such as YAG laser the irradiation (transmission) of the 3rd higher hamonic wave (oscillation wavelength 355nm).
In addition, film is prevented by 2 wavelength reflection in the past proposed to be designed to prevent reflection to excimer laser wavelength 248nm and wavelength 600nm ~ 700nm with less than 1.5%.
Prior art document
Patent documentation
Patent documentation 1: Japanese Patent No. 3232727 publication
Patent documentation 2: Japanese Patent No. 4190773 publication
Summary of the invention
Invent problem to be solved
But, the 3rd higher hamonic wave (oscillation wavelength 355nm) being applied to YAG laser not changing the membrane structure of above-mentioned antireflection film carries out wavelength when moving, there is reflectivity and become more than 3% within the scope of wavelength 400nm ~ 600nm, the observation as can be seen here in district becomes the problem of difficulty.
In addition, antireflection film in the past uses TiO
2the high-index material of such refractive index more than 1.8 is formed.Generally speaking, TiO
2the film absorptivity of such high-index material within the scope of the ultraviolet region of below wavelength 400nm is high.Therefore when using the 3rd higher hamonic wave (the oscillation wavelength 355nm) of the laser of ultraviolet region, such as YAG laser, there are the following problems: antireflection film damages due to the absorption of light, membrane structure changes, thus can not obtain predetermined dichroism, such as reflection prevent characteristic.
Therefore, the object of the invention is to can by suitably setting refractive index and the membrane structure of the material of antireflection film, the light in the ultraviolet region of 400nm and these two regions of visibility region of wavelength 400nm ~ 700nm is less than mainly for wavelength, there is provided optically absorption that is stable, light less, and effectively can realize the antireflection film that predetermined reflection prevents.The present invention also aims to, provide 2 wavelength reflection of the various optical lenses being such as suitable for carrying out laser treatment to prevent film as this antireflection film.
For solving the means of problem
In order to solve above-mentioned problem and achieve the goal, antireflection film of the present invention has the structure of the film of more than 6 layers being formed with the 1st layer, the 2nd layer, the 3rd layer, the 4th layer, the 5th layer, the 6th layer on transparent substrate from air side to substrate-side successively, odd number film from air side is low refractive index film, even number film is the middle refractive index film that low refractive index film or refractive index ratio low refractive index film are large, and the refractive index of the middle refractive index film under central wavelength lambda 0 and low refractive index film is being set to N respectively
m, N
ltime, meet following formula (1), (2), (3) simultaneously,
λ0＝500nm···（1）
1.45≦N
M≦1.8 ··（2）
N
L＜1.45 ···（3）
The feature of this antireflection film is, wavelength X 2 place of the wavelength X 1 in ultraviolet region and visible range prevents reflection,
Meet following formula (4), (5), (6), (7), (8), (9) simultaneously.
λ1＝355nm···（4）
400nm≦λ2≦700nm ···（5）
R1≦1.0% ···（6）
R2≦1.5% ···（7）
K1≦1.0% ···（8）
K2≦1.0% ···（9）
Herein,
R1 is the reflectivity under wavelength X 1,
R2 is the reflectivity under wavelength X 2,
K1 is the film absorptivity under wavelength X 1,
K2 is the film absorptivity under wavelength X 2,
Film absorptivity is the transmissivity of the reflectivity+substrate of 100-(100-(substrate))-(applying the transmissivity of the substrate after the reflectivity+applying antireflection film of the substrate after antireflection film).
Preferably, the refractive index of substrate is less than 1.85 to antireflection film of the present invention.
Preferably, the refractive index of substrate is more than 1.85 to antireflection film of the present invention.
Antireflection film of the present invention preferably, meets following formula (10), (11), (12), (13), (14), (15), (16) simultaneously.
0.229×λ0≦d1≦0.234×λ0 ···（10）
0.260×λ0≦d2≦0.268×λ0 ···（11）
0.045×λ0≦d3≦0.077×λ0 ···（12）
0.074×λ0≦d4≦0.118×λ0 ···（13）
0.211×λ0≦d5≦0.277×λ0 ···（14）
0.035×λ0≦d6≦0.150×λ0 ···（15）
0.039×λ0≦d7≦0.207×λ0 ···（16）
Herein,
D1 is the blooming of the 1st layer,
D2 is the blooming of the 2nd layer,
D3 is the blooming of the 3rd layer,
D4 is the blooming of the 4th layer,
D5 is the blooming of the 5th layer,
D6 is the blooming of the 6th layer,
D7 is the blooming of the 7th layer,
Blooming is refractive index × geometry thickness.
Antireflection film of the present invention preferably, meets following formula (17), (18), (19), (20), (21), (22) simultaneously.
0233×λ0≦d1≦0234×λ0 ···（17）
0.269×λ0≦d2≦0.289×λ0 ···（18）
0.072×λ0≦d3≦0.073×λ0 ···（19）
0.106×λ0≦d4≦0.127×λ0 ···（20）
0.146×λ0≦d5≦0.211×λ0 ···（21）
0.253×λ0≦d6≦0.278×λ0 ···（22）
Herein,
D1 is the blooming of the 1st layer,
D2 is the blooming of the 2nd layer,
D3 is the blooming of the 3rd layer,
D4 is the blooming of the 4th layer,
D5 is the blooming of the 5th layer,
D6 is the blooming of the 6th layer,
D7 is the blooming of the 7th layer,
Blooming is refractive index × geometry thickness.
Preferably, the material of intermediate-index layer is Al to antireflection film of the present invention
2o
3, SiO
2, LaF
3, NdF
3, YF
3, CeF
3or comprising the potpourri of these compounds, the material of low-index layer is MgF
2, BaF
2, LiF, AlF
3, NaF, CaF
2or comprise the potpourri of these compounds.
The feature of lens of the present invention is, has been applied in any one antireflection film above-mentioned.
The feature of optical system of the present invention is to have said lens.
The feature of object lens of the present invention is, has above-mentioned optical system.
The feature of optical device of the present invention is, has above-mentioned optical system, uses optical system to carry out observing and convergent laser.
The effect of invention
Antireflection film of the present invention plays following effect: the light being less than the ultraviolet region of 400nm and these two regions of visibility region of wavelength 400nm ~ 700nm mainly for wavelength, optically stablize, the absorption of light is less, and effectively can realize predetermined reflection and prevent.
Accompanying drawing explanation
Fig. 1 is the curve map of the spectral reflectance characteristic of the antireflection film that the embodiment 1 ~ 9 shown in table 1 is shown.
Fig. 2 is the embodiment 1,9 of the bound of the base material refractive index illustrated in the embodiment of table 1 and the curve map of the spectral reflectance characteristic of embodiment 5 selected from the embodiment between these.
Fig. 3 is about embodiment 1, draws the curve map of the value after the reflectivity of substrate and transmissivity being added and the value after the reflectivity of the substrate after applying antireflection film and transmissivity being added for wavelength.
Fig. 4 is about embodiment 1, draws the curve map after film absorptivity for wavelength.
Fig. 5 is the curve map of the spectral reflectance characteristic that the embodiment 10 ~ 12 shown in table 2 is shown.
Fig. 6 is the curve map of the spectral reflectance characteristic that the embodiment 13,14 shown in table 3 is shown.
Fig. 7 is the curve map of the spectral reflectance characteristic that the comparative example shown in table 4 is shown.
Fig. 8 is the figure of the structure of the repair apparatus that the 4th embodiment is shown.
Fig. 9 is the figure of the microscopical structure that the 5th embodiment is shown.
Embodiment
Below, the embodiment of antireflection film of the present invention is explained with reference to the accompanying drawings.In addition, the present invention is not by the restriction of following embodiment.
First, before the explanation of embodiment, effect/effect of the present invention is described.
Antireflection film of the present invention has the structure of the film of more than 6 layers being formed with the 1st layer, the 2nd layer, the 3rd layer, the 4th layer, the 5th layer, the 6th layer on transparent substrate from air side to substrate-side successively, odd number film from air side is low refractive index film, even number film is the middle refractive index film that low refractive index film or refractive index ratio low refractive index film are large, and the refractive index of the middle refractive index film under central wavelength lambda 0 and low refractive index film is being set to N respectively
m, N
ltime, meet following formula (1), (2), (3) simultaneously,
λ0＝500nm···（1）
1.45≦N
M≦1.8 ···（2）
N
L＜1.45 ···（3）
The feature of this antireflection film is, wavelength X 2 place of the wavelength X 1 in ultraviolet region and visible range prevents reflection,
Meet following formula (4), (5), (6), (7), (8), (9) simultaneously.
λ1＝355nm···（4）
400nm≦λ2≦700nm ···（5）
R1≦1.0% ···（6）
R2≦1.5% ···（7）
K1≦1.0% ···（8）
K2≦1.0% ···（9）
Herein,
R1 is the reflectivity under wavelength X 1,
R2 is the reflectivity under wavelength X 2,
K1 is the film absorptivity under wavelength X 1,
K2 is the film absorptivity under wavelength X 2,
Film absorptivity is the transmissivity of the reflectivity+substrate of 100-(100-(substrate))-(applying the transmissivity of the substrate after the reflectivity+applying antireflection film of the substrate after antireflection film).
In addition, for substrate reflectivity and apply reflectivity application above formula (6), (7) of the substrate after antireflection film.
When more than any one in above formula (6) ~ (9) having exceeded higher limit, optically become unstable, the absorption of light becomes many, thus is difficult to effectively to realize predetermined reflection and prevents.
Antireflection film of the present invention preferably, meets following formula (10), (11), (12), (13), (14), (15), (16) simultaneously.
0.229×λ0≦d1≦0.234×λ0 ···（10）
0.260×λ0≦d2≦0.268×λ0 ···（11）
0.045×λ0≦d3≦0.077×λ0 ···（12）
0.074×λ0≦d4≦0.118×λ0 ···（13）
0.211×λ0≦d5≦0.277×λ0 ···（14）
0.035×λ0≦d6≦0.150×λ0 ···（15）
0.039×λ0≦d7≦0.207×λ0 ···（16）
Herein,
D1 is the blooming of the 1st layer,
D2 is the blooming of the 2nd layer,
D3 is the blooming of the 3rd layer,
D4 is the blooming of the 4th layer,
D5 is the blooming of the 5th layer,
D6 is the blooming of the 6th layer,
D7 is the blooming of the 7th layer,
Blooming is refractive index × geometry thickness.
When do not meet in above formula (10) ~ (16) any one more than, optically become unstable, the absorption of light becomes many, thus is difficult to effectively to realize predetermined reflection and prevents.
Antireflection film of the present invention preferably, meets following formula (17), (18), (19), (20), (21), (22) simultaneously.
0.233×λ0≦d1≦0.234×λ0 ···（17）
0.269×λ0≦d2≦0.289×λ0 ···（18）
0.072×λ0≦d3≦0.073×λ0 ···（19）
0.106×λ0≦d4≦0.127×λ0 ···（20）
0.146×λ0≦d5≦0.211×λ0 ···（21）
0.253×λ0≦d6≦0.278×λ0 ···（22）
Herein,
D1 is the blooming of the 1st layer,
D2 is the blooming of the 2nd layer,
D3 is the blooming of the 3rd layer,
D4 is the blooming of the 4th layer,
D5 is the blooming of the 5th layer,
D6 is the blooming of the 6th layer,
D7 is the blooming of the 7th layer,
Blooming is refractive index × geometry thickness.
When do not meet in above formula (17) ~ (22) any one more than, optically become unstable, the absorption of light becomes many, thus is difficult to effectively to realize predetermined reflection and prevents.
Table 1 is the table of the structure of the antireflection film of 7 Rotating fields that the 1st embodiment is shown.Table 2 is tables of the structure of the antireflection film of 7 Rotating fields that the 2nd embodiment is shown.Table 3 is tables of the structure of the antireflection film of 6 Rotating fields that the 3rd embodiment is shown.Table 4 is tables of the structure of the antireflection film of 6 Rotating fields illustrated as comparative example.In table 1 ~ 4, show material and the blooming of each layer according to the lamination order relative to substrate.Blooming is the numerical value after the numerical value carried each token is multiplied by the design wavelength lambda 0 of each embodiment.In addition, table and accompanying drawing in baseplate material title except describing the title of concrete material title, be the trade mark of Obara Corporation.
[table 1]
[table 2]
[table 3]
[table 4]
Fig. 1 is the curve map of the spectral reflectance characteristic of the antireflection film that the embodiment 1 ~ 9 shown in table 1 is shown.Fig. 2 is the embodiment 1,9 of the bound of the base material refractive index illustrated in the embodiment of table 1 and the curve map of the spectral reflectance characteristic of embodiment 5 selected from the embodiment between these.Fig. 3 is about embodiment 1, draws the curve map of the value after the reflectivity of substrate and transmissivity being added and the value after the reflectivity of the substrate after applying antireflection film and transmissivity being added for wavelength.Fig. 4 is about embodiment 1, draws the curve map after film absorptivity for wavelength.Fig. 5 is the curve map of the spectral reflectance characteristic that the embodiment 10 ~ 12 shown in table 2 is shown.Fig. 6 is the curve map of the spectral reflectance characteristic that the embodiment 13,14 shown in table 3 is shown.Fig. 7 is the curve map of the spectral reflectance characteristic that the comparative example shown in table 4 is shown.
Herein, Fig. 1, Fig. 2, Fig. 5 ~ Fig. 7 illustrates to get the figure that transverse axis is wavelength (unit nm), the longitudinal axis is reflectivity (unit %) 2 wavelength reflection prevent the spectral reflectance characteristic of film.In addition, film absorptivity shown in Fig. 4 uses the transmissivity (dotted line) of the substrate after the reflectivity+applying antireflection film of the transmissivity (solid line) of the reflectivity+substrate of the substrate shown in Fig. 3 and the substrate after applying antireflection film, according to " transmissivity of the reflectivity+substrate of 100-(100-(substrate))-(applying the transmissivity of the substrate after the reflectivity+applying antireflection film of the substrate after antireflection film) " calculate.In addition, in Fig. 3, Fig. 4, not only for 355nm and 400 ~ 700nm, in order to reference, also for all scopes between 300 ~ 750nm, show reflectivity+transmissivity and film absorptivity.
(the 1st embodiment)
The antireflection film of the embodiment 1 ~ 9 shown in table 1 is on the base material of refractive index 1.5 ~ 1.85, and design wavelength lambda 0 is set to 500nm, stacked by the MgF as low-index material
2form the 1st, 3,5,7 layer and by the Al as middle refractive index material
2o
37 Rotating fields after the 2nd, 4,6 layer that forms.This antireflection film be set the layer that is made up of middle refractive index material as M, the layer that is made up of low-index material be L time, be 7 Rotating fields of LMLMLML from air side (away from substrate side).In addition, by the Al as middle refractive index material
2o
3the refractive index N of the layer formed
mbe 1.61, and meet 1.45≤N
m≤ 1.8, by the MgF as low-index material
2the refractive index N of the layer formed
lbe 1.38, and meet N
l< 1.45.
Each layer of the antireflection film of the 1st embodiment is 10
-2~ 10
-4formed by vacuum evaporation in the region of no pressure of Pa.In addition, the formation method of each layer is not limited to vacuum evaporation, also can obtain the antireflection film with equivalent properties by sputtering method, ion plating method, ion assisted deposition method.
In addition, Al is used respectively
2o
3as middle refractive index material, use MgF
2as low-index material, but general Al
2o
3, MgF
2in visibility region and be less than in the ultraviolet region of 400nm, the absorptivity of light is lower.Can by using these materials, the accumulation of laser energy suppressing the absorption of light to cause and the reduction of transmissivity.But, be not limited to this material, as long as there is the material of identical refractive index with each material, then can obtain the antireflection film with equivalent properties.Such as, except Al
2o
3in addition, SiO can also be used
2, LaF
3, NdF
3, YF
3, CeF
3or comprise the material of potpourri as intermediate-index layer of these compounds.In addition, except MgF
2in addition, BaF can also be used
2, LiF, AlF
3, NaF, CaF
2or comprise the material of potpourri as low-index layer of these compounds.
Shown in spectral reflectance characteristic as shown in Figure 1, Figure 2, the oscillation wavelength 355nm(λ 1 of the 3rd higher hamonic wave of the YAG laser of ultraviolet region) under reflectivity R1 be less than 1%, be less than 1.5% as the reflectivity R2 under the wavelength coverage (λ 2) of the 400nm to 700nm of visible range.Therefore, relative to only utilizing the reflectivity of base material and about 4%, the antireflection film of the 1st embodiment achieves very good reflection and prevents performance.
Herein, as shown in Figure 3, Figure 4, the oscillation wavelength 355nm(λ 1 of the 3rd higher hamonic wave of YAG laser) under film absorptivity K1(Fig. 4) be film absorptivity K2(Fig. 4 under the wavelength coverage (λ 2) of less than 1%, more than 400nm below 700nm) be less than 1.0%.Although not shown, be also same result about embodiment 2 ~ 9.
On the other hand, for shown in table 4, optical lens after the antireflection film that applies in the past at two-sided or one side, as shown in Figure 7, irradiating 100 15mJ/mm by YAG laser
2light after produce damage.On the other hand, for the optical lens after two-sided or one side apply the antireflection film of the 1st embodiment, although irradiated 100 70mJ/mm by YAG laser
2light, but whichever optical element does not all produce damage.
(the 2nd embodiment)
The antireflection film of the embodiment 10 ~ 12 shown in table 2 is less than on the base material of 1.5 in refractive index, and design wavelength lambda 0 is set to 500nm, stacked by the MgF as low-index material
2the the 1st, 3,5,7 layer that forms, by the Al as middle refractive index material
2o
3form the 2nd, 4 layer and by the SiO as middle refractive index material
27 Rotating fields after the 6th layer that forms.This antireflection film be set the layer that is made up of middle refractive index material as M, the layer that is made up of low-index material be L time, be 7 Rotating fields of LMLMLML from air side (away from substrate side).In addition, by the Al as middle refractive index material
2o
3the refractive index N of the layer formed
mbe 1.61, by SiO
2the refractive index N of the layer formed
mbe 1.46, all meet 1.45≤N
m≤ 1.8.Further, by the MgF as low-index material
2the refractive index N of the layer formed
lbe 1.38, meet N
l< 1.45.
Each layer of the antireflection film of the 2nd embodiment is 10
-2~ 10
-4formed by vacuum evaporation in the region of no pressure of Pa.In addition, the formation method of each layer is not limited to vacuum evaporation, also can obtain the antireflection film with equivalent properties by sputtering method, ion plating method, ion assisted deposition method.
In addition, Al is used respectively
2o
3and SiO
2as middle refractive index material, use MgF
2as low-index material, but the material of each layer is not limited to these materials, as long as have the material of identical refractive index with each material, then can obtain the antireflection film with equivalent properties.Such as, except Al
2o
3, SiO
2in addition, LaF can also be used
3, NdF
3, YF
3, CeF
3or comprise the material of potpourri as intermediate-index layer of these compounds.In addition, except MgF
2in addition, BaF can also be used
2, LiF, AlF
3, NaF, CaF
2or comprise the material of potpourri as low-index layer of these compounds.
As shown in the spectral reflectance characteristic of Fig. 5, the oscillation wavelength 355nm(λ 1 of the 3rd higher hamonic wave of the YAG laser of ultraviolet region) under reflectivity R1 be less than 1%, be less than 1.5% as the reflectivity R2 under the wavelength coverage (λ 2) of the 400nm to 700nm of visible range.Therefore, relative to only utilizing the reflectivity of base material and about 4%, the antireflection film of the 2nd embodiment has very good reflection and prevents performance.Herein, although not shown, but, the oscillation wavelength 355nm(λ 1 of 3rd higher hamonic wave of YAG laser same with above-described embodiment 1) under film absorptivity K1 be film absorptivity K2 under the wavelength coverage (λ 2) of less than 1%, more than 400nm below 700nm be less than 1.0%.
On the other hand, for shown in table 4, optical lens after the antireflection film that applies in the past at two-sided or one side, as shown in Figure 7, irradiating 100 15mJ/mm by YAG laser
2light after produce damage.On the other hand, for the optical lens after two-sided or one side apply the antireflection film of the 2nd embodiment, although irradiated 100 70mJ/mm by YAG laser
2light, but whichever optical element does not all produce damage.
(the 3rd embodiment)
The antireflection film of the embodiment 13,14 shown in table 3 is on the base material of refractive index more than 1.85, and design wavelength lambda 0 is set to 500nm, stacked by the MgF as low-index material
2form the 1st, 3,5 layer and by the Al as middle refractive index material
2o
36 Rotating fields after the 2nd, 4,6 layer that forms.This antireflection film be set the layer that is made up of middle refractive index material as M, the layer that is made up of low-index material be L time, be 6 Rotating fields of LMLMLM from air side (away from substrate side).In addition, by the Al as middle refractive index material
2o
3the refractive index N of the layer formed
mbe 1.61, meet 1.45≤N
m≤ 1.8.Further, by the MgF as low-index material
2the refractive index N of the layer formed
lbe 1.38, meet N
l< 1.45.
Each layer of the antireflection film of the 3rd embodiment is 10
-2~ 10
-4formed by vacuum evaporation in the region of no pressure of Pa.In addition, the formation method of each layer is not limited to vacuum evaporation, also can obtain the antireflection film with equivalent properties by sputtering method, ion plating method, ion assisted deposition method.
In addition, Al is used respectively
2o
3as middle refractive index material, use MgF
2as low-index material, but the material of each layer is not limited to these materials, as long as have the material of identical refractive index with each material, then can obtain the antireflection film with equivalent properties.Such as, except Al
2o
3in addition, LaF can also be used
3, NdF
3, YF
3, CeF
3or comprise the material of potpourri as intermediate-index layer of these compounds.In addition, except MgF
2in addition, BaF can also be used
2, LiF, AlF
3, NaF, CaF
2or comprise the material of potpourri as low-index layer of these compounds.
As shown in the spectral reflectance characteristic of Fig. 6, the reflectivity under the oscillation wavelength 355nm of the 3rd higher hamonic wave of the YAG laser of ultraviolet region is less than 1%, is less than 1.5% as the reflectivity under the wavelength coverage of the 400nm to 700nm of visible range.Therefore, relative to only utilizing the reflectivity of base material and about 4%, the antireflection film of the 3rd embodiment has very good reflection and prevents performance.Herein, although not shown, but, the oscillation wavelength 355nm(λ 1 of 3rd higher hamonic wave of YAG laser same with above-described embodiment 1) under film absorptivity K1 be film absorptivity K2 under the wavelength coverage (λ 2) of less than 1%, more than 400nm below 700nm be less than 1.0%.
On the other hand, as shown in Figure 7, the optical lens after antireflection film shown in table 4, that apply in the past at two-sided or one side is irradiating 100 15mJ/mm by YAG laser
2light after produce damage.On the other hand, for the optical lens after two-sided or one side apply the antireflection film of the 3rd embodiment, although irradiated 100 70mJ/mm by YAG laser
2light, but whichever optical element does not all produce damage.
(the 4th embodiment)
Below, be described the repair apparatus as optical devices with reference to Fig. 8, these optical devices have the optical system after applying antireflection film.
Fig. 8 is the figure of the structure of the repair apparatus (being laser repairing below) that the 4th embodiment is shown.This repair apparatus is the device that irradiating laser removes the defective part produced on the glass substrate, semiconductor wafer, printed base plate etc. of liquid crystal display.
Laser repairing shown in Fig. 8 has processing light source 101, iris ring 102, lens 103, the object lens 106 being formed with antireflection film, semi-transparent semi-reflecting lens 104, semi-transparent semi-reflecting lens 105, observes light source 109, lens 110, transfer table 112, mobile drive control part 121, CCD 122(charge coupled cell as imaging apparatus), TV Monitor 123, image processing part 124 and drive control part 125.
Processing light source 101 is injection light sources to the processing of the laser beam that repairing object is processed, such as, preferably can penetrate the laser beam of multiple wavelength according to repairing object.From the control of the laser that processing is penetrated with light source 101, the mode of oscillation of such as light intensity, emission wavelength, impulse hunting etc., light to extinguish and control to be undertaken by not shown control part.The laser penetrated from processing light source 101 is irradiated to the surface (repaired face) of the machined object 111 transfer table 112 via iris ring 102, lens 103, semi-transparent semi-reflecting lens 104, semi-transparent semi-reflecting lens 105, object lens 106.
Machined object 111 can together with being moved drive control part 121 and controlling the transfer table 112 of movement with the face of the laser vertical from processing light source 101 in move.The position control of the machined object 111 of mobile drive control part 121 is utilized to be: the observations according to machined object 111 surface in image processing part 124 described later, export control information by image processing part 124 to mobile drive control part 121, make the laser from processing light source 101 be irradiated to defective part exactly.In addition, according to the observations on machined object 111 surface in image processing part 124, setting is outputted to drive control part 125 from the information of the illuminate condition outside the light intensity of the laser of processing light source 101 from image processing part 124, with corresponding with the size of defective part, the degree of depth and other states.
Iris ring 102 makes the Distribution of laser intensity on the cross section vertical with the optical axis of the laser beam penetrated from processing light source 101 even.Drive control part 125 is according to the action of the Data Control iris ring 102 from image processing part 124.By the light beam after iris ring 102 through lens 103, semi-transparent semi-reflecting lens 104, semi-transparent semi-reflecting lens 105 and being converged on machined object 111 by object lens 106.This light beam irradiation to the defective part on machined object 111, for removing this defective part.
In addition, the illumination light of visibility region is penetrated from observation light source 109.This illumination light is reflected by semi-transparent semi-reflecting lens 105 after being assembled by lens 110, and is irradiated to machined object 111 through object lens 106.Illumination light reflects on the surface of machined object 111, is reflected by semi-transparent semi-reflecting lens 104 through after object lens 106, semi-transparent semi-reflecting lens 105, coalescence can incide CCD 122 through semi-transparent semi-reflecting lens 108 by lens 107.In CCD 122, incident light is converted to electric signal, is presented on TV Monitor 123, and the signal after conversion is outputted to image processing part 124.
In laser repairing in the past, adding the object lens of laser by observing of larger output energy in man-hour, therefore there is the problem damaging object lens, separately prepare to observe with and processing object lens.
But, observation will be carried out with observation lens like this and decide Working position, and switch to processing lens to process, in the time, expend the man-hour of twice.In addition, also need the contraposition etc. of observation lens and processing lens, operation all increases in mechanical aspects and software.
On the other hand, in the laser repairing of the 4th embodiment, the antireflection film in visible ~ ultraviolet region with higher transmissivity and permanance is used for object lens 106.Therefore, the object lens in visible ~ ultraviolet region with good optical property can be realized, the object lens observed with and process can be shared thus, can not switch lens ground after viewing and carry out Laser Processing roughly simultaneously, also do not need software correction and Mechanical course, thus the accuracy realizing significantly time shorten and device improves.
(the 5th embodiment)
Be described the microscope as the optical device possessing object lens (objective system 22) with reference to Fig. 9, these object lens have the optical system after applying antireflection film.
Fig. 9 is the figure of the structure of the microscope (ultraviolet microscope) that the 5th embodiment is shown.Use this microscope, the display after the observation of visible range to ultraviolet region of subject, the ultraviolet image of subject and visible color image overlap can be carried out, and the observation of the only UV image of subject.
The mirror pin 214 of ultraviolet microscope, in order to mechanically prevent the vibration of transmitting from pedestal 258, is arranged on except shaking on platform 260 by the ultraviolet microscope shown in Fig. 9.On mirror pin 214, support lens barrel 212 via arm 216.Lens barrel 212 possesses light source 218, and has the optical lens system of the illumination lens system 220, objective system 222 and the imaging lens system 224 that configure along its light path.Illumination lens system 220 has collector lens 220a and collector lens 220b, the light of decent convergence light source 218.Reflected by semi-transparent semi-reflecting lens 226 by the light of the light source 218 after collector lens 220a, 220b convergence, focused by objective system 222 and incide subject 228.
Spread by objective system 222 by the light after subject 228 reflects, and through semi-transparent semi-reflecting lens 226 and imaging lens system 224.By dichronic mirror 230a, the imaging optical path of imaging lens system 224 is separated into the light path of ultraviolet light path and visible ray.
Herein, ultraviolet is reflected by dichronic mirror 230a, and is reflected by catoptron 231 further, thus is imaged in the imaging surface (not shown) of ultraviolet television video camera 234a.The input picture (UV image) being imaged on its imaging surface is converted to electrical picture signal by television camera 234a, and is supplied to display 238a by the image processing apparatus 236a of ultraviolet.Display 238a, according to the input signal from television camera 234a, shows the monochrome image corresponding with the ultraviolet region picture of subject 228 in real time.
On the other hand, visible light-transmissive dichronic mirror 230a, and reflected by catoptron 240,242 successively, thus be imaged in the imaging surface (not shown) of colour camera 234b.The input picture (visible image) being imaged on its imaging surface is converted to electric colour picture signal by television camera 234b, and is supplied to display 238b by the image processing apparatus 236b of visual picture.Display 238b, according to the input signal from image processing apparatus 236b, shows the coloured image corresponding with the visible image of subject 228 in real time.
According to above situation, the high-resolution ultraviolet image of the tiny area of subject 228 can be observed by display 238a, meanwhile, the color of the tiny area of subject 228 can be observed by display 238b.This can tackle the defect inspection of such as semiconductor devices.
Television camera 234a, 234b have amplifying lens system 244a, 244b for carrying out zoom to input picture respectively.Amplifying lens system 244a, 244b are set to and can carry out multiplying power setting independently of each other, can observe ultraviolet image and the coloured image of subject 228 thus with mutually different multiplying powers simultaneously.
Image processing apparatus 236a, 236b are controlled by controller 246, have known image processing function respectively.Image processing apparatus 236a, 236b respectively can to image printer 248a, 248b output images.
In lens barrel 212, be configured with the shutter 250 of the light that can block light source 218.The opening and closing of the shutter 250 of this light source can Non-follow control, but controls preferably by controller 246.Amplifying lens system 244a, 244b have respectively for the imaging surface to television camera 234a, 234b entered shutter 252a, 252b that light quantity is set to zero.Closing shutter 252a, 252b and undertaken without when entering the shooting of light state by television camera 234a, 234b, can obtain as a setting as picture.
On the arm 216 of ultraviolet microscope, in order to keep subject 228, be supported with mechanical scanning 254.Mechanical scanning 254 has the Z worktable 254z supported by arm 216, and the Y worktable 254y be arranged on successively on this Z worktable 254z and X worktable 254x.X worktable 254x, Y worktable 254y and Z worktable 254z can carry out manual actuation by set screw 256x, 256y, 256z respectively, also can carry out drived control by controller 246.
Converter 262 supports multiple objective system 222, optionally can switch objective system by its rotation.Turret lens 264a, 264b support multiple amplifying lens system 244a, 244b respectively, can be rotated optionally switch amplifying lens system by it.By the switching of these objective systems 222 and/or amplifying lens system 244a, 244b, the zoom rate of ultraviolet microscope is set to variable.
Depth of focus and the wavelength of objective system 222 shoal pro rata, are therefore difficult to focus when observing UV image.In order to eliminate this difficulty, be equipped with the automatic focusing mechanism 278 being used for ultraviolet television video camera 234a.
With the development of trickle process technology in recent years, the structure of semiconductor devices etc. is in the trend of further granular.For the fine structure below ultra micron, use the resolving power of the optical microscope of visible ray inadequate, therefore can not carry out the measurement of live width or the detection of defect.On the other hand, SEM(scanning electron microscope) and the resolving power of ultraviolet microscope enough, but be only monochrome image by the display image that their are formed, the information of the color as one of the big event checked can not be obtained.Further, SEM needs vacuum environment when observing, and therefore operation is not easy.
On the other hand, in the microscope of the 5th embodiment, by using the light source of visible ray ~ ultraviolet light, the coloured image based on visible ray and the image based on ultraviolet light can be obtained simultaneously, can realize observing the microscopic system of colouring information and the high image information of resolving power simultaneously.
In addition, in the system of the transmissions in ultraviolet to visible-range such as tunable laser, also by the optical element in light supply apparatus forms above-mentioned antireflection film, in whole wavelength coverage, can there is enough transmissivities, and there is enough permanance.
As shown in above embodiment, can by suitably setting refractive index and the membrane structure of the material of antireflection film, the light being less than the ultraviolet region of 400nm and these two regions of visibility region of wavelength 400nm ~ 700nm mainly for wavelength is provided, optically absorption that is stable, light is less and effectively carried out 2 wavelength reflection that predetermined reflection prevents and prevent film, and this 2 wavelength reflection prevents film to be such as suitable for carrying out the optical lens of laser treatment.
Utilizability in industry
As mentioned above, antireflection film of the present invention is at the light for ultraviolet region and these two regions of visibility region, and optically absorption that is stable, light is less and the optical system requiring predetermined reflection preventive is useful.
Label declaration
101: processing light source
102: iris ring
103,107: lens
104,105,108: semi-transparent semi-reflecting lens
106: object lens
109: observe light source
110: lens
111: machined object
112: transfer table
121: mobile drive control part
122：CCD
123:TV monitor
124: image processing part
125: drive control part
218: light source
220: illumination lens system
220a, 220b: collector lens
222: objective system
224: imaging lens system
226: semi-transparent semi-reflecting lens
228: subject
230a: dichronic mirror
231,240,242: catoptron
234a, 234b: television camera
236a, 236b: image processing apparatus
238a, 238b: display
244a, 244b: amplifying lens system
246: controller
248a, 248b: image printer
250,252a, 252b: shutter
254: mechanical scanning
Claims (10)
1. an antireflection film, it has the structure of the film of more than 6 layers being formed with the 1st layer, the 2nd layer, the 3rd layer, the 4th layer, the 5th layer, the 6th layer on transparent substrate from air side to described substrate-side successively, odd number film from described air side is low refractive index film, even number film is the middle refractive index film that described in low refractive index film or refractive index ratio, low refractive index film is large, and the refractive index of the described middle refractive index film under central wavelength lambda 0 and described low refractive index film is being set to N respectively
m, N
ltime, meet following formula (1), (2), (3) simultaneously,
λ0＝500nm···（1）
1.45≦N
M≦1.8 ···（2）
N
L＜1.45 ···（3）
The feature of this antireflection film is, wavelength X 2 place of the wavelength X 1 in ultraviolet region and visible range prevents reflection,
Meet following formula (4), (5), (6), (7), (8), (9) simultaneously,
λ1＝355nm···（4）
400nm≦λ2≦700nm ···（5）
R1≦1.0% ···（6）
R2≦1.5% ···（7）
K1≦1.0% ···（8）
K2≦1.0% ···（9）
Herein,
R1 is the reflectivity under wavelength X 1,
R2 is the reflectivity under wavelength X 2,
K1 is the film absorptivity under wavelength X 1,
K2 is the film absorptivity under wavelength X 2,
The transmissivity of the reflectivity that described film absorptivity is substrate described in 100-(100-(+described substrate))-(applying the transmissivity of the reflectivity of the described substrate after described antireflection film+the apply described substrate after described antireflection film).
2. antireflection film according to claim 1, is characterized in that,
The refractive index of described substrate is less than 1.85.
3. antireflection film according to claim 1, is characterized in that,
The refractive index of described substrate is more than 1.85.
4. antireflection film according to claim 2, is characterized in that,
Described antireflection film meets following formula (10), (11), (12), (13), (14), (15), (16) simultaneously,
0.229×λ0≦d1≦0.234×λ0 ···（10）
0.260×λ0≦d2≦0.268×λ0 ···（11）
0.045×λ0≦d3≦0.077×λ0 ···（12）
0.074×λ0≦d4≦0.118×λ0 ···（13）
0.211×λ0≦d5≦0.277×λ0 ···（14）
0.035×λ0≦d6≦0.150×λ0 ···（15）
0.039×λ0≦d7≦0.207×λ0 ···（16）
Herein,
D1 is the blooming of described 1st layer,
D2 is the blooming of described 2nd layer,
D3 is the blooming of described 3rd layer,
D4 is the blooming of described 4th layer,
D5 is the blooming of described 5th layer,
D6 is the blooming of described 6th layer,
D7 is the blooming of the 7th layer,
Described blooming is refractive index × geometry thickness.
5. antireflection film according to claim 3, is characterized in that,
Described antireflection film meets following formula (17), (18), (19), (20), (21), (22) simultaneously,
0.233×λ0≦d1≦0.234×λ0 ···（17）
0.269×λ0≦d2≦0.289×λ0 ···（18）
0.072×λ0≦d3≦0.073×λ0 ···（19）
0.106×λ0≦d4≦0.127×λ0 ···（20）
0.146×λ0≦d5≦0.211×λ0 ···（21）
0.253×λ0≦d6≦0.278×λ0 ···（22）
Herein,
D1 is the blooming of described 1st layer,
D2 is the blooming of described 2nd layer,
D3 is the blooming of described 3rd layer,
D4 is the blooming of described 4th layer,
D5 is the blooming of described 5th layer,
D6 is the blooming of described 6th layer,
Described blooming is refractive index × geometry thickness.
6. the antireflection film according to any one in Claims 1 to 5, is characterized in that,
The material of described intermediate-index layer is Al
2o
3, SiO
2, LaF
3, NdF
3, YF
3, CeF
3or comprise the potpourri of these compounds,
The material of described low-index layer is MgF
2, BaF
2, LiF, AlF
3, NaF, CaF
2or comprise the potpourri of these compounds.
7. lens, is characterized in that, these lens have been applied in the antireflection film described in any one in claim 1 ~ 6.
8. an optical system, is characterized in that, this optical system has lens according to claim 7.
9. object lens, is characterized in that, these object lens have optical system according to claim 8.
10. an optical device, is characterized in that, this optical device has optical system according to claim 8, uses described optical system to carry out observing and convergent laser.
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|---|---|---|---|
| JP2010-196543 | 2010-09-02 | ||
| JP2010196543A JP5603714B2 (en) | 2010-09-02 | 2010-09-02 | Antireflection film, lens, optical system, objective lens, and optical apparatus |
| PCT/JP2011/069526 WO2012029744A1 (en) | 2010-09-02 | 2011-08-30 | Reflection-blocking film, lens, optical assembly, objective lens, and optical apparatus |
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| CN102918428B true CN102918428B (en) | 2015-01-07 |
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| KR20210094100A (en) * | 2018-12-17 | 2021-07-28 | 어플라이드 머티어리얼스, 인코포레이티드 | Back coating for transparent substrates |
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| TW579434B (en) * | 2001-04-23 | 2004-03-11 | Leica Microsystems | Inspection-microscope for several wavelength-ranges and reflection-reduction-layer for an inspection-microscope for several wavelength-ranges |
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| JP2586509B2 (en) * | 1987-09-01 | 1997-03-05 | ミノルタ株式会社 | Anti-reflective coating |
| JP3232727B2 (en) * | 1992-11-25 | 2001-11-26 | キヤノン株式会社 | 2-wavelength anti-reflection coating |
| JP3708429B2 (en) | 2000-11-30 | 2005-10-19 | Ｈｏｙａ株式会社 | Method for manufacturing vapor deposition composition, method for manufacturing optical component having vapor deposition composition and antireflection film |
| JP2003098312A (en) * | 2001-09-26 | 2003-04-03 | Olympus Optical Co Ltd | Antireflection film and optical device |
| JP4190773B2 (en) * | 2002-02-26 | 2008-12-03 | オリンパス株式会社 | Antireflection film, optical lens and optical lens unit |
| CA2448410A1 (en) | 2002-11-06 | 2004-05-06 | Pentax Corporation | Anti-relfection spectacle lens and its production method |
| JP4455022B2 (en) * | 2003-11-18 | 2010-04-21 | オリンパス株式会社 | Antireflection film and objective lens |
| JP4423119B2 (en) * | 2004-06-16 | 2010-03-03 | キヤノン株式会社 | Antireflection film and optical element using the same |
| JP5096966B2 (en) * | 2008-03-03 | 2012-12-12 | ペンタックスリコーイメージング株式会社 | Antireflection film, optical component having the same, interchangeable lens, and imaging device |
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|---|---|---|---|---|
| TW579434B (en) * | 2001-04-23 | 2004-03-11 | Leica Microsystems | Inspection-microscope for several wavelength-ranges and reflection-reduction-layer for an inspection-microscope for several wavelength-ranges |
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| TWI537582B (en) | 2016-06-11 |
| TW201211578A (en) | 2012-03-16 |
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| JP2012053329A (en) | 2012-03-15 |
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