CN102916107A - Composite heating panel structure and method for applying the composite heating panel structure to package light emitting diode - Google Patents
Composite heating panel structure and method for applying the composite heating panel structure to package light emitting diode Download PDFInfo
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- CN102916107A CN102916107A CN2011102234804A CN201110223480A CN102916107A CN 102916107 A CN102916107 A CN 102916107A CN 2011102234804 A CN2011102234804 A CN 2011102234804A CN 201110223480 A CN201110223480 A CN 201110223480A CN 102916107 A CN102916107 A CN 102916107A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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Abstract
The invention discloses a composite heating panel structure and a method for applying the composite heating panel structure to package a light-emitting diode. The composite heating panel structure comprises a metal substrate, at least one ceramic radiating structure and at least one welding layer, wherein the ceramic radiating structure is connected to the metal substrate through the welding layer; the ceramic radiating structure comprises a ceramic substrate, a first metal layer and a second metal layer; the first metal layer is located on the upper surface of the ceramic substrate as a patterned circuit; the second metal layer is arranged on the lower surface of the ceramic substrate; the light-emitting diode is directly arranged on the metal substrate and connected to the first metal layer through a lead. The ceramic substrate is metalized and connected with the metal substrate, so as to radiate well, without insulation paste. By virtue of the structure and the method, the radiating property and the high voltage impact resistance are improved; the aging problem is avoided; and the manufacturing cost is reduced.
Description
Technical field
The present invention relates to a kind of composite radiating board structure, be particularly useful for encapsulation LED.
Background technology
With reference to figure 1, the schematic diagram of prior art cooling plate structure.Prior art cooling plate structure 1 comprises a metal substrate 10, a line layer 31 and an insulating cement 33, line layer 31 is to see through insulating cement 33 to be adhered on the metal substrate 10, and light-emitting diode 100 is connected on the line layer 31, and is connected with other line layer 31 through routing.
The problem of prior art maximum is that insulating cement 33 is the not good material of heat transfer property matter, and not high voltage withstanding impact, and high-voltage impact can be reached improvement with the thickness that increases insulating cement 33, but so that the relative variation of heat transfer property matter.Therefore, need a kind of cooling plate structure with good heat transfer property matter and high voltage withstanding impact.
Summary of the invention
Main purpose of the present invention is to provide a kind of composite radiating board structure, this composite radiating board structure comprises metal substrate, at least one ceramic heat-dissipating structure and at least one weld layer, composite radiating board structure of the present invention is mainly used in encapsulation LED, the ceramic heat-dissipating structure sees through weld layer and is connected on the metal substrate, each ceramic heat-dissipating structure comprises ceramic substrate, the first metal layer and the second metal level, the first metal layer is arranged at the upper surface of ceramic substrate, circuit for patterning, the second metal level is arranged at the lower surface of ceramic substrate, can be the circuit of patterning or the metal level of the whole lower surface of covering ceramic substrate.Light-emitting diode directly is arranged on the metal substrate, and is connected to the first metal layer through wire.
Another object of the present invention is to provide a kind of method of using the composite radiating board structure encapsulation LED, the method comprises ceramic heat-dissipating shaping structures step, engagement step, crystal grain Connection Step and rubber seal step.Ceramic heat-dissipating shaping structures step is to form metal level at the upper surface of at least one ceramic substrate and lower surface, and forms at least the circuit of patterning at upper surface, and forms at least one ceramic heat-dissipating structure.Engagement step is that the ceramic heat-dissipating structure is connected with metal substrate, and the crystal grain Connection Step is that light-emitting diode is directly connected on the metal substrate, and light-emitting diode is connected with the circuit of patterning.The rubber seal step is to finish the light-emitting diode of connection with resin-encapsulated.
Characteristics of the present invention are, composite radiating board structure of the present invention is with the upper and lower surface metallization of ceramic substrate, and at the surface of ceramic substrate formation individual layer or double-deck circuit, and the metal level of lower surface or circuit are so that can use welding manner to be connected with metal substrate, combine the great heat radiation effect of metal and ceramic substrate, and do not need to use insulating cement, and promote heat dissipating, high pressure resistant impact, more avoided aging problem, more reduced cost of manufacture.In addition, light-emitting diode directly is connected on the metal substrate, so that under the situation that increases high pressure resistant impact, also reach good radiating effect.
Description of drawings
Fig. 1 is the schematic diagram of prior art heat-radiating substrate;
Fig. 2 is the schematic diagram of composite radiating board structure of the present invention;
Fig. 3 is the flow chart that the present invention uses the method for composite radiating board structure encapsulation LED;
Fig. 4 is the thin section flow chart of ceramic heat-dissipating shaping structures step the first embodiment of the present invention;
Fig. 5 is the thin section flow chart of ceramic heat-dissipating shaping structures step the second embodiment of the present invention.
Embodiment
Below cooperation is graphic does more detailed description to embodiments of the present invention, and those of ordinary skill in the art can be implemented after studying this specification carefully according to this.
With reference to figure 2, the schematic diagram of composite radiating board structure of the present invention.As shown in Figure 2, composite radiating board structure 2 of the present invention, comprise metal substrate 10, at least one ceramic heat-dissipating structure 20 and at least one weld layer 40, composite radiating board structure 2 of the present invention is mainly used in encapsulation LED 100, metal substrate 10 is mainly copper or aluminium is made, ceramic heat-dissipating structure 20 sees through weld layer 40 and is connected on the metal substrate 10, each ceramic heat-dissipating structure 20 comprises ceramic substrate 21, the first metal layer 23 and the second metal level 25, the first metal layer 23 is arranged at the upper surface of ceramic substrate 21, circuit for patterning, the second metal level 25 is arranged at the lower surface of ceramic substrate 21, can be the circuit of patterning or the metal level of covering ceramic substrate 21 whole lower surfaces, the material of the first metal layer 23 and the second metal level 25 is copper, aluminium at least one of them, further, form a Gold plated Layer or a silver coating (not shown) on the surface of the first metal layer 23 and the second metal level 25.Weld layer 40 is generally tin cream for the welding material of conduction, and the second metal level 25 of ceramic heat-dissipating structure 20 bottoms is connected with metal substrate 10.Light-emitting diode 100 directly is arranged on the metal substrate 10, and is connected to the first metal layer 23 through wire.
With reference to figure 3, the present invention uses the flow chart of the method for composite radiating board structure encapsulation LED.The method S1 that the present invention uses the composite radiating board structure encapsulation LED comprises ceramic heat-dissipating shaping structures step S10, engagement step S30, crystal grain Connection Step S50 and rubber seal step S70.Ceramic heat-dissipating shaping structures step S10 forms metal level at the upper surface of at least one ceramic substrate and lower surface, and forms the circuit of patterning in the image transfer mode to the metal level of major general's upper surface, and forms at least one ceramic heat-dissipating structure.Engagement step S30 is connected the ceramic heat-dissipating structure with metal substrate, normally print solder paste heats and makes metal substrate and ceramic heat-dissipating structural engagement on the surface of metal substrate, crystal grain Connection Step S50 is directly connected in light-emitting diode on the metal substrate, and routing is connected light-emitting diode with the circuit of patterning.Rubber seal step S70 will finish the light-emitting diode of connection and routing with resin-encapsulated.
With reference to figure 4 and Fig. 5, be respectively the first embodiment and second embodiment of the thin section flow chart of ceramic heat-dissipating shaping structures step S10.As shown in Figure 4, the first embodiment of ceramic heat-dissipating shaping structures step S10 comprises ceramic substrate pre-treatment step S11, metal film forms step S13, coating thickens step S15, planarization step S17, first little shadow step S19, etching and stripping step S21, substrate surface treatment step S23, dividing processing step S25, ceramic substrate pre-treatment step S11 carries out the ultrasonic waves degreasing with a ceramic motherboard first, cleaning and baking, so that surface cleaning, metal film formation step S13 is the mode with evaporation or sputter, upper surface and lower surface at ceramic motherboard form respectively metal film, coating thickens step S15 and electroplates or the electroless plating mode, the thickness that thickens of metal film is the metal level greater than 5 μ m, and the thickness of metal level is preferably the scope of 20 μ m to 70 μ m.
Planarization step S17 is surface grinding to a flat surface with metal level.First little shadow step S19 is coated with first a wet film or a dry film is set on the metal level of the upper surface of ceramic motherboard at least, and form a photoresist layer, then expose with light shield, develop again and manifest the logicalnot circuit part of metal level, etching and stripping step S21 partly remove this logicalnot circuit with dry ecthing or wet etching mode, divest again photoresist layer and form circuit, further, first little shadow step S19 and etching and stripping step S21 carry out at the metal level of the lower surface of the metal level of the upper surface of ceramic motherboard and ceramic motherboard.Substrate surface treatment step S23 carries out gold-plated or silver-plated processing for this circuit, with the degree of adhering to of the routing that promotes light-emitting diode.Dividing processing step S25 is cut apart ceramic motherboard, and forms a plurality of ceramic heat-dissipating structures.
The second embodiment of ceramic heat-dissipating shaping structures step S10 comprises ceramic substrate pre-treatment step S11, metal film forms step S13, second little shadow step S27, coating thickens step S15, planarization step S17, substrate surface treatment step S23, etching and strip step S29, dividing processing step S25, ceramic substrate pre-treatment step S11, metal film forms step S13, dividing processing step S25 method is with the first embodiment, do not repeat them here, second little shadow step S27 is coated with first wet film at least or dry film is set and forms a photoresist layer on the metal level of the upper surface of ceramic motherboard, then expose with light shield, develop again and will manifest the circuit pack of metal level, coating thickens step S15, to electroplate or the electroless plating mode, circuit pack is thickened, planarization step S17, substrate surface treatment step S23 method is with the first embodiment, so difference is only at this circuit pack and this photoresist layer.Etching and strip step S29 remove logicalnot circuit metal level, photoresist layer partly, and the metal film of photoresist layer below, and form line layer.
Characteristics of the present invention are, composite radiating board structure of the present invention is with the upper and lower surface metallization of ceramic substrate, and at the surface of ceramic substrate formation individual layer or double-deck circuit, and the metal level of lower surface or circuit are so that can use welding manner to be connected with metal substrate, combine the great heat radiation effect of metal and ceramic substrate, and do not need to use insulating cement, and promote heat dissipating, more avoided aging problem, more reduced cost of manufacture.The present invention also is promoted to more than the 5KV from traditional 1.5KV, and light-emitting diode directly is connected on the substrate for the improvement of high-voltage impact, so that under the situation that increases high voltage withstanding impact, also reach good radiating effect.
The above person only is in order to explain preferred embodiment of the present invention; be not that attempt is done any pro forma restriction to the present invention according to this; therefore, all have in that identical spirit is lower do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protect.
Claims (9)
1. a composite radiating board structure is mainly used in encapsulation LED, it is characterized in that, this composite heating panel comprises:
One metal substrate;
At least one weld layer; And
At least one ceramic heat-dissipating structure, seeing through this at least one weld layer is connected on this metal substrate, each ceramic heat-dissipating structure comprises a ceramic substrate, a first metal layer and one second metal level, this the first metal layer is arranged at the upper surface of this ceramic substrate, be the circuit of a patterning, this second metal level is arranged at the lower surface of this ceramic substrate, is connected with this weld layer, be the circuit of a patterning or a metal level that covers the whole lower surface of this ceramic substrate
Wherein at this metal substrate at least one light-emitting diode is set, and should be connected to this first metal layer through wire by at least one light-emitting diode.
2. composite radiating board structure as claimed in claim 1 is characterized in that, this metal substrate is made with copper or aluminium, the material of this first metal layer and this second metal level comprise copper, aluminium at least one of them, this weld layer be one the conduction welding material.
3. composite radiating board structure as claimed in claim 2 is characterized in that, the welding material of this conduction is tin cream.
4. composite radiating board structure as claimed in claim 2 is characterized in that, further forms a Gold plated Layer or a silver coating on the surface of this first metal layer and this second metal level.
5. method of using the composite radiating board structure encapsulation LED is characterized in that the method comprises:
One ceramic heat-dissipating shaping structures step forms metal level at a upper surface of at least one ceramic substrate and a lower surface, and forms at least the circuit of a patterning at this upper surface, and forms at least one ceramic heat-dissipating structure;
One engagement step is that this at least one ceramic heat-dissipating structure is connected with a metal substrate;
One crystal grain Connection Step is directly connected at least one light-emitting diode on this metal substrate, and described light-emitting diode is connected with the circuit of this patterning; And
One rubber seal step will be finished this at least one light-emitting diode of connection and routing with resin-encapsulated.
6. method as claimed in claim 5 is characterized in that, this ceramic heat-dissipating shaping structures step comprises:
One ceramic substrate pre-treatment step is with the cleaning surfaces of a ceramic motherboard;
One metal film forms step, in the mode of evaporation or sputter, forms respectively a metal film at a upper surface and a lower surface of this pottery motherboard;
One coating thickens step, electroplating or the electroless plating mode, the thickness of this metal film is thickened, and forms thickness greater than the metal level of 5 μ m;
One planarization step is ground to a flat surface with this metal level;
One first little shadow step forms first a photoresist layer at least on this metal level of this upper surface of this pottery motherboard, then with the light shield exposure, develop to manifest a logicalnot circuit part of this metal level again;
One etching and stripping step are partly removed this logicalnot circuit with dry ecthing or wet etching mode, divest this photoresist layer again and form a circuit;
One substrate surface treatment step is to carry out a gold-plated processing or a silver-plated processing for this circuit; And
One dividing processing step should be cut apart by the pottery motherboard, and forms this at least one ceramic heat-dissipating structure.
7. method as claimed in claim 6 is characterized in that, this metal level that further is included in this lower surface of this pottery motherboard is carried out this first little shadow step and this etching and stripping step.
8. method as claimed in claim 5 is characterized in that, this ceramic heat-dissipating shaping structures step comprises:
One ceramic substrate pre-treatment step is with the cleaning surfaces of a ceramic motherboard;
One metal film forms step, in the mode of evaporation or sputter, forms respectively a metal film at a upper surface and a lower surface of this pottery motherboard;
One second little shadow step forms first a photoresist layer at least on this metal film of this upper surface of this pottery motherboard, then with the light shield exposure, develop to manifest the circuit pack of metal film again;
One coating thickens step, electroplating or the electroless plating mode, the thickness of this metal film is thickened, and forms thickness greater than the metal level of 5 μ m;
One planarization step is ground to a flat surface with this metal level;
One substrate surface treatment step is to carry out a gold-plated processing or a silver-plated processing for this metal level;
One etching and strip step, metal level and this photoresist layer of non-this circuit pack of removal, and the metal film of photoresist layer below, and form a line layer; And
One dividing processing step should be cut apart by the pottery motherboard, and forms this at least one ceramic heat-dissipating structure.
9. method as claimed in claim 8, it is characterized in that, further carry out this second little shadow step at this metal film of this lower surface of this pottery motherboard, this coating thickens step, this planarization step, this substrate surface treatment step and this dry ecthing and strip step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102234804A CN102916107A (en) | 2011-08-05 | 2011-08-05 | Composite heating panel structure and method for applying the composite heating panel structure to package light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102234804A CN102916107A (en) | 2011-08-05 | 2011-08-05 | Composite heating panel structure and method for applying the composite heating panel structure to package light emitting diode |
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| Publication Number | Publication Date |
|---|---|
| CN102916107A true CN102916107A (en) | 2013-02-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102234804A Pending CN102916107A (en) | 2011-08-05 | 2011-08-05 | Composite heating panel structure and method for applying the composite heating panel structure to package light emitting diode |
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| CN (1) | CN102916107A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103956356A (en) * | 2014-04-29 | 2014-07-30 | 复旦大学 | Efficient heat conducting large-power LED integration package structure |
| CN113447052A (en) * | 2021-06-07 | 2021-09-28 | 武汉光迅科技股份有限公司 | Light receiving assembly and light sensing equipment |
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| US5081562A (en) * | 1987-05-19 | 1992-01-14 | Mitsubishi Denki Kabushiki Kaisha | Circuit board with high heat dissipations characteristic |
| US20060157862A1 (en) * | 2005-01-19 | 2006-07-20 | Fuji Electric Device Technology, Co., Ltd. | Semiconductor device and method for producing the same |
| CN102064265A (en) * | 2009-11-11 | 2011-05-18 | 钰桥半导体股份有限公司 | Semiconductor chip assembly with post/base heat spreader and substrate |
| CN102117877A (en) * | 2009-12-31 | 2011-07-06 | 钰桥半导体股份有限公司 | Semiconductor chip assembly |
| CN202178296U (en) * | 2011-08-09 | 2012-03-28 | 柏腾科技股份有限公司 | Composite radiating board structure |
-
2011
- 2011-08-05 CN CN2011102234804A patent/CN102916107A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5081562A (en) * | 1987-05-19 | 1992-01-14 | Mitsubishi Denki Kabushiki Kaisha | Circuit board with high heat dissipations characteristic |
| US20060157862A1 (en) * | 2005-01-19 | 2006-07-20 | Fuji Electric Device Technology, Co., Ltd. | Semiconductor device and method for producing the same |
| CN102064265A (en) * | 2009-11-11 | 2011-05-18 | 钰桥半导体股份有限公司 | Semiconductor chip assembly with post/base heat spreader and substrate |
| CN102117877A (en) * | 2009-12-31 | 2011-07-06 | 钰桥半导体股份有限公司 | Semiconductor chip assembly |
| CN202178296U (en) * | 2011-08-09 | 2012-03-28 | 柏腾科技股份有限公司 | Composite radiating board structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103956356A (en) * | 2014-04-29 | 2014-07-30 | 复旦大学 | Efficient heat conducting large-power LED integration package structure |
| CN113447052A (en) * | 2021-06-07 | 2021-09-28 | 武汉光迅科技股份有限公司 | Light receiving assembly and light sensing equipment |
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Application publication date: 20130206 |