CN102904159A - 一种基于bcb键合工艺的混合集成激光器及其制作方法 - Google Patents
一种基于bcb键合工艺的混合集成激光器及其制作方法 Download PDFInfo
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103762158A (zh) * | 2014-01-23 | 2014-04-30 | 中国科学院半导体研究所 | 利用激光微区等离子体诱导量子阱混和的方法 |
CN105785508A (zh) * | 2014-12-25 | 2016-07-20 | 江苏尚飞光电科技有限公司 | 基于bcb键合工艺的耦合器结构及其制作方法 |
WO2018203246A1 (en) * | 2017-05-05 | 2018-11-08 | International Business Machines Corporation | Electro-optical device with iii- v gain materials and integrated heat sink |
CN108879319A (zh) * | 2017-05-09 | 2018-11-23 | 晶元光电股份有限公司 | 半导体元件 |
CN111564758A (zh) * | 2020-05-27 | 2020-08-21 | 中国科学院半导体研究所 | 低损耗硅基激光器 |
CN111600195A (zh) * | 2020-05-08 | 2020-08-28 | 中国科学院上海微***与信息技术研究所 | 一种硅基单片集成激光器及其制备方法 |
CN111934196A (zh) * | 2020-06-28 | 2020-11-13 | 北京大学 | 一种电驱动的片上集成掺铒波导放大器及其制备方法 |
CN111987585A (zh) * | 2019-05-24 | 2020-11-24 | 中国科学院半导体研究所 | 一种硅波导输出激光器 |
WO2020237423A1 (zh) * | 2019-05-24 | 2020-12-03 | 中国科学院半导体研究所 | 硅波导输出激光器 |
CN115308834A (zh) * | 2022-08-10 | 2022-11-08 | 松山湖材料实验室 | 集成光收发芯片、光电子器件和光收发*** |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101667715B (zh) * | 2008-09-03 | 2010-10-27 | 中国科学院半导体研究所 | 一种单模高功率垂直腔面发射激光器及其制作方法 |
CN102142656A (zh) * | 2009-12-30 | 2011-08-03 | 英特尔公司 | 具有面内耦合的混合硅垂直腔激光器 |
CN102684069A (zh) * | 2012-05-30 | 2012-09-19 | 中国科学院半导体研究所 | 基于倏逝场耦合及周期微结构选频的混合硅单模激光器 |
-
2012
- 2012-10-26 CN CN201210418410.9A patent/CN102904159B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101667715B (zh) * | 2008-09-03 | 2010-10-27 | 中国科学院半导体研究所 | 一种单模高功率垂直腔面发射激光器及其制作方法 |
CN102142656A (zh) * | 2009-12-30 | 2011-08-03 | 英特尔公司 | 具有面内耦合的混合硅垂直腔激光器 |
CN102684069A (zh) * | 2012-05-30 | 2012-09-19 | 中国科学院半导体研究所 | 基于倏逝场耦合及周期微结构选频的混合硅单模激光器 |
Non-Patent Citations (3)
Title |
---|
于丽娟等: "硅基键合InP-InGaAsP量子阱连续激光器的研制", 《半导体学报》 * |
申高等: "Nd:YAG/Cr:YAG键合晶体的355nm激光器", 《中国激光》 * |
韩伟华等: "硅基键合激光器的研究进展", 《半导体光电》 * |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103762158A (zh) * | 2014-01-23 | 2014-04-30 | 中国科学院半导体研究所 | 利用激光微区等离子体诱导量子阱混和的方法 |
CN103762158B (zh) * | 2014-01-23 | 2016-04-27 | 中国科学院半导体研究所 | 利用激光微区等离子体诱导量子阱混和的方法 |
CN105785508A (zh) * | 2014-12-25 | 2016-07-20 | 江苏尚飞光电科技有限公司 | 基于bcb键合工艺的耦合器结构及其制作方法 |
CN105785508B (zh) * | 2014-12-25 | 2022-06-14 | 南通新微研究院 | 基于bcb键合工艺的耦合器结构及其制作方法 |
WO2018203246A1 (en) * | 2017-05-05 | 2018-11-08 | International Business Machines Corporation | Electro-optical device with iii- v gain materials and integrated heat sink |
US10256603B2 (en) | 2017-05-05 | 2019-04-09 | International Business Machines Corporation | Electro-optical device with III-V gain materials and integrated heat sink |
US10283931B2 (en) | 2017-05-05 | 2019-05-07 | International Business Machines Corporation | Electro-optical device with III-V gain materials and integrated heat sink |
GB2576844A (en) * | 2017-05-05 | 2020-03-04 | Ibm | Electro-optical device with III-V gain materials and integrated heat sink |
GB2576844B (en) * | 2017-05-05 | 2022-03-16 | Ibm | Electro-optical device with III - V gain materials and integrated heat sink |
CN108879319A (zh) * | 2017-05-09 | 2018-11-23 | 晶元光电股份有限公司 | 半导体元件 |
WO2020237423A1 (zh) * | 2019-05-24 | 2020-12-03 | 中国科学院半导体研究所 | 硅波导输出激光器 |
CN111987585A (zh) * | 2019-05-24 | 2020-11-24 | 中国科学院半导体研究所 | 一种硅波导输出激光器 |
CN111600195A (zh) * | 2020-05-08 | 2020-08-28 | 中国科学院上海微***与信息技术研究所 | 一种硅基单片集成激光器及其制备方法 |
CN111600195B (zh) * | 2020-05-08 | 2022-03-25 | 中国科学院上海微***与信息技术研究所 | 一种硅基单片集成激光器及其制备方法 |
CN111564758A (zh) * | 2020-05-27 | 2020-08-21 | 中国科学院半导体研究所 | 低损耗硅基激光器 |
CN111934196A (zh) * | 2020-06-28 | 2020-11-13 | 北京大学 | 一种电驱动的片上集成掺铒波导放大器及其制备方法 |
CN111934196B (zh) * | 2020-06-28 | 2021-12-10 | 北京大学 | 一种电驱动的片上集成掺铒波导放大器及其制备方法 |
CN115308834A (zh) * | 2022-08-10 | 2022-11-08 | 松山湖材料实验室 | 集成光收发芯片、光电子器件和光收发*** |
CN115308834B (zh) * | 2022-08-10 | 2024-02-09 | 松山湖材料实验室 | 集成光收发芯片、光电子器件和光收发*** |
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Address after: 226017 R & D Park, Jiangcheng road 1088, Sutong science and Technology Industrial Park, Nantong, Jiangsu Patentee after: Nantong Xinwei Research Institute Patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address before: 226017 R & D Park, Jiangcheng road 1088, Sutong science and Technology Industrial Park, Nantong, Jiangsu Patentee before: Shanghai Institute of Microsystems, Chinese Academy of Sciences, Nantong new Micro Research Institute Patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address after: 226017 R & D Park, Jiangcheng road 1088, Sutong science and Technology Industrial Park, Nantong, Jiangsu Patentee after: Shanghai Institute of Microsystems, Chinese Academy of Sciences, Nantong new Micro Research Institute Patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address before: 226017 R & D Park, Jiangcheng road 1088, Sutong science and Technology Industrial Park, Nantong, Jiangsu Patentee before: NANTONG OPTO-ELECTRONICS ENGINEERING CENTER, CHINESE ACADEMY OF SCIENCES Patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
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Effective date of registration: 20240531 Address after: 200050 No. 865, Changning Road, Shanghai, Changning District Patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Country or region after: China Address before: 226017 R & D Park, Jiangcheng road 1088, Sutong science and Technology Industrial Park, Nantong, Jiangsu Patentee before: Nantong Xinwei Research Institute Country or region before: China Patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |