CN102892857A - 两个部件之间的导热性装置和该导热性装置的制造方法 - Google Patents

两个部件之间的导热性装置和该导热性装置的制造方法 Download PDF

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CN102892857A
CN102892857A CN2011800161243A CN201180016124A CN102892857A CN 102892857 A CN102892857 A CN 102892857A CN 2011800161243 A CN2011800161243 A CN 2011800161243A CN 201180016124 A CN201180016124 A CN 201180016124A CN 102892857 A CN102892857 A CN 102892857A
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K-V·许特
R·瓦尔
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Abstract

本发明涉及一种在两个部件(11、13)之间的导热性装置(10)，包括产生热的第一部件(11)和用于将第一部件(11)的热导出的第二部件(13)，其中两个部件(11、13)排列为借助于导热介质(12)而彼此呈作用连接。根据本发明设计为，导热介质(12)含有金属成分，特别是金属离子(16)，它们排布在载体材料(15)，尤其是在聚合物基质中，并且导热介质(12)在最终状态具有由金属成分组成的树枝状体(22)，它与两个部件(11、13)的接触表面(17、18)导热性连接。

Description

两个部件之间的导热性装置和该导热性装置的制造方法
现有技术
本发明涉及根据两个独立权利要求前序部分的在两个部件之间的导热性装置(Anordnung)和在两个部件之间的导热性装置的制造方法。
这样的装置和这种装置的制造方法在现有技术中已经是已知的。其中，例如产生热的第一部件通过介质与导出热的第二部件例如散热体连接。在此，该介质例如由未固化的糊料作为所谓的填缝剂(其中部分已固化)组成，或作为导热性膜或导热性粘结材料组成，其中后两种介质通常完全固化。所述的材料大部分非常高度填充有无机材料，例如银、氧化铝、氮化硼或碳。此外，存在所谓的“相变材料”(PCM)，其聚集状态根据温度而变化，其中实现了部件润湿性的改进。在关于导热性材料的最新进展中，使用了纳米颗粒(例如纳米银、碳纳米管(CNT))。但是所有这些材料就下面要求的组合方面受批判或不是理想的：高柔韧性时的高导热性、不使用导电材料时的高导热性、由于在各接合部件(Fügepartner)上的良好热连接而使传热阻力降低。
此外，从US5 958 590已知，使用糊料形式的具有高导电性的树枝状粉末材料作为焊接材料用于连接或制造导电连接。在此过程中，在由聚合物材料作为载体材料制成的基质中引入导电金属颗粒，该颗粒只要载体材料还不是固体就会形成导电桥，所谓的“树枝状体(Dendrite)”，它用于使连接具有相对低的电阻。
发明内容
从所展示的现有技术出发，本发明所基于的任务是，改进根据两个独立权利要求前序部分的在两个部件之间的导热性装置和在两个部件之间的导热性装置的制造方法，其方式是使得在两个部件之间的热连接就上述要求方面来说最优化。该任务通过具有两个独立权利要求的特征的导热性装置和导热性装置的制造方法获得解决。在此过程中，本发明基于的构思为，通过使用其中布置有形成树枝状体的金属成分的载体材料，使得可以在两个相互呈作用连接的(zwei miteinander inWirkverbingung stehenden)部件之间实现最佳的导热性。
本发明的装置和用于制造该装置的方法的有利的实施方案在各从属权利要求书中给出。来自至少两个在权利要求、说明书和/或附图中公开的特征的所有组合都落入本发明范围内。
一方面为了能够形成树枝状体，另一方面为了简化导热性介质在部件之间的装置，而不会在运行期间因为液体或粘稠的导热介质导致困难或缺陷，在优选的实施方案中设计为，导热介质在加工状态下呈液态或糊状和在最终状态下呈固态。
特别优选的是，两个部件至少在与导热介质的接触表面上由导电材料，特别是金属组成。由此，创造了这样的可能性，即通过在导热介质中施加电压和与之相关的电流，使得可以在两个接触表面之间实现有针对性地构造树枝状体。
如果待连接的导热性部件不是由金属组成并打算运用本发明的话，在本发明的一个变型中可能的是或可设想的是，两个部件在接触表面上具有金属涂层或金属层。
特别地设计为，第一部件是电气元件，而第二部件是冷却元件(Kühlelement)。在此过程中，通过本发明的导热性装置可以实现电气部件和冷却元件之间最佳的热流出
Figure BPA00001640534500021
此外，特别优选的是，至少导热介质在形成为树枝状体之后进行热处理用于固化。由此，实现了导热介质所希望的固体最终状态，使得可以或确保导热介质在两个部件的接触表面上的牢固连接。
在一种制备导热性装置的经济上重要的方法中，建议将导热介质施加到两个部件之一的接触表面上，随后另一个部件以其接触表面与导热介质贴靠接触(Anlagekontakt)。
特别地，其中可以设计为，导热介质在所述一个部件的接触表面上的施加通过冲压、撒布(Dispensen)或丝网印刷进行。在此过程中，使用的方法尤其取决于第一部件接触表面现有的表面性能和形貌及其尺寸。
本发明的其它优点、特征和细节从优选实施方案的下面描述中以及借助于附图得出。
其中
图1表示初始(Ausgang)状态下的使用导热介质情况下的两组待连接的导热部件的装置的纵剖面图
图2表示根据图1的装置的纵剖面图，其中装置和导热介质在最终状态下具有树枝状体。
在图1中示意了装置10，它由第一部件11、导热介质12和第二部件13组成。这里，第一部件11用于举例而不是限制性的，可以是产生热的电气或电子部件，例如大功率晶体管、IC或类似物。第二部件13本身也是举例性而不是限制性的，构造为导热部件，例如散热体，它应将由第一部件11产生的热排出到周围环境。
导热介质由载体材料15组成，该材料尤其是聚合物基质形式，在其中在初始状态下，如图1中所示意的，混入有金属离子16形式的金属盐，该金属盐或多或少均匀地分布排列在载体材料15中。作为金属离子16，使用铜和/或铁和/或铝和/或银离子。这里，在各个金属离子16之间通常首先没有接触。重要的还有，导热介质12在初始状态下呈液态或糊状，由此金属离子16可以运动。
为了制造装置10，导热介质12首先例如施加到第一部件11上。这尤其可以通过冲压、撒布或丝网印刷进行，取决于经济的或其它的要求，使得可以将导热介质12以希望的方式施加到第一部件11的接触表面17上。接着，第二部件13以其朝向导热介质12的接触表面18与导热介质12有效连接，其中通过将第二部件13以其接触表面18例如压在导热介质12上。
在根据图1的装置10构成后，在第二步中在两个部件11和13上施加电压。这如图2所示。对于两个部件11和13由导电材料，特别是金属，例如铜组成的情况，这可以通过部件11和13与电源20直接连接进行。但是如果两个部件11和13由导电差或不导电的材料组成，则有利的或需要的是两个部件11和13在其接触表面17和18上设置金属涂层或金属层，例如铜层，然后与电源20连接。
通过在两个部件11和13(或两个部件11和13的导电接触表面17和18)上施加电压，金属离子16在导热介质12内形成树枝状体22，它使得可以在两个接触表面17和18之间通过金属离子16和因此也在两个部件11和13之间实现直接连接。由此，通过树枝状体22，两个接触表面17和18直接地导热性连接，使得第一部件11产生的热直接地通过导热介质12或树枝状体22导出到第二部件13上。
在施加电压或在形成树枝状体22时，导热介质12已经固化或已经开始固化。为加速固化过程，有意义或有利的是，随后将装置10在炉中进行热处理。在此过程中，导热介质12完全固化，使得取得了最佳的导热性。
大体上示意或描述的装置10可以以各种各样的方式方法进行改变或改进。因此，例如也可以设想的是，部件11和13不是如所示意的那样具有平面或平滑的接触表面17和18，而是将其构造成其它类型。在此情况下，导热介质12可以通过其在初始状态下为糊或液体的形式无问题地紧贴在部件11和13的各表面上或例如填充部件缝隙。

Claims (10)

1.在两个部件(11、13)之间的导热性装置(10)，包括产生热的第一部件(11)和用于将第一部件(11)的热导出的第二部件(13)，其中两个部件(11、13)排列为借助于导热介质(12)而彼此呈作用连接，其特征在于，所述导热介质(12)含有金属成分，特别是金属离子(16)，它们排布在载体材料(15)，尤其是在聚合物基质中，并且导热介质(12)在最终状态具有由金属成分组成的树枝状体(22)，该树枝状体与两个部件(11、13)的接触表面(17、18)导热性连接。
2.根据权利要求1的装置，其特征在于，导热介质(12)在加工或初始状态下呈液态或糊状并且在最终状态下呈固态。
3.根据权利要求1或2的装置，其特征在于，两个部件(11、13)至少在与导热介质(12)的接触表面(17、18)上由导电材料，特别是金属组成。
4.根据权利要求3的装置，其特征在于，两个部件(11、13)在接触表面(17、18)上具有金属涂层或金属层。
5.根据权利要求1-4之一的装置，其特征在于，第一部件(11)是电气或电子元件，第二部件(13)是冷却元件。
6.用于制造在两个部件(11、13)之间的导热性装置(10)的方法，其中在部件(11、13)的接触表面(17、18)之间布置导热介质(12)，其中导热介质(12)首先呈液态或糊状和在固化过程之后呈固态，其特征在于，在导热介质(12)的朝向部件(11、13)的接触表面(17、18)上至少间接地施加电压，之后在导热介质(12)中通过金属成分、特别是金属离子(16)，形成树枝状体(22)，该树枝状体与两个部件(11、13)的接触表面(17、18)导热性地相互连接。
7.根据权利要求6的方法，其特征在于，部件(11、13)至少在与导热介质(12)的接触表面(17、18)上形成为导电性的，并在部件(11、13)上施加电压。
8.根据权利要求6或7的方法，其特征在于，至少导热介质(12)在形成树枝状体(22)之后进行热处理以固化。
9.根据权利要求6-8之一的方法，其特征在于，导热介质(12)施加到两个部件(11、13)之一的接触表面(17、18)上，接着另一个部件(11、13)以其接触表面(17、18)与导热介质(12)贴靠接触。
10.根据权利要求9的方法，其特征在于，导热介质(12)在一个部件(11、13)的接触表面(17、18)上的施加通过冲压、撒布或丝网印刷进行。
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8822970B2 (en) * 2011-02-21 2014-09-02 Korea Advanced Institute Of Science And Technology (Kaist) Phase-change memory device and flexible phase-change memory device insulating nano-dot
US20180068926A1 (en) * 2015-03-27 2018-03-08 Intel Corporation Energy storage material for thermal management and associated techniques and configurations

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4265775A (en) * 1979-08-16 1981-05-05 International Business Machines Corporation Non-bleeding thixotropic thermally conductive material
US5958590A (en) * 1995-03-31 1999-09-28 International Business Machines Corporation Dendritic powder materials for high conductivity paste applications
US20020175316A1 (en) * 2001-03-06 2002-11-28 Fujitsu Limited Conductive particles, conductive composition, electronic device, and electronic device manufacturing method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194653A (ja) * 1986-02-21 1987-08-27 Hitachi Ltd 半導体装置
JP2000281995A (ja) * 1999-03-30 2000-10-10 Polymatech Co Ltd 熱伝導性接着フィルムおよび半導体装置
US6372997B1 (en) * 2000-02-25 2002-04-16 Thermagon, Inc. Multi-layer structure and method for forming a thermal interface with low contact resistance between a microelectronic component package and heat sink
US6940721B2 (en) * 2000-02-25 2005-09-06 Richard F. Hill Thermal interface structure for placement between a microelectronic component package and heat sink
JP2001274302A (ja) * 2000-03-28 2001-10-05 Jsr Corp 伝熱シートおよび伝熱シートの製造方法
CN100578778C (zh) * 2000-12-21 2010-01-06 株式会社日立制作所 电子器件
JP2004256687A (ja) * 2003-02-26 2004-09-16 Polymatech Co Ltd 熱伝導性反応硬化型樹脂成形体及びその製造方法
WO2005124790A2 (en) * 2004-06-15 2005-12-29 Siemens Power Generation, Inc. High thermal conductivity materials aligned within resins
US7642205B2 (en) * 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
US20080038871A1 (en) * 2006-08-10 2008-02-14 George Liang-Tai Chiu Multipath soldered thermal interface between a chip and its heat sink
JP2008218771A (ja) * 2007-03-06 2008-09-18 Sumitomo Electric Ind Ltd 接着シート、接着シートの製造方法および半導体装置
US8940850B2 (en) * 2012-08-30 2015-01-27 Carver Scientific, Inc. Energy storage device
JP5365861B2 (ja) * 2009-08-04 2013-12-11 Ｊｓｒ株式会社 伝熱シートおよびその製造方法
US8587945B1 (en) * 2012-07-27 2013-11-19 Outlast Technologies Llc Systems structures and materials for electronic device cooling

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4265775A (en) * 1979-08-16 1981-05-05 International Business Machines Corporation Non-bleeding thixotropic thermally conductive material
US5958590A (en) * 1995-03-31 1999-09-28 International Business Machines Corporation Dendritic powder materials for high conductivity paste applications
US20020175316A1 (en) * 2001-03-06 2002-11-28 Fujitsu Limited Conductive particles, conductive composition, electronic device, and electronic device manufacturing method

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