CN102891150A - Pixel structure of ultraviolet detector, ultraviolet detector system and manufacturing method thereof - Google Patents
Pixel structure of ultraviolet detector, ultraviolet detector system and manufacturing method thereof Download PDFInfo
- Publication number
- CN102891150A CN102891150A CN2011102069332A CN201110206933A CN102891150A CN 102891150 A CN102891150 A CN 102891150A CN 2011102069332 A CN2011102069332 A CN 2011102069332A CN 201110206933 A CN201110206933 A CN 201110206933A CN 102891150 A CN102891150 A CN 102891150A
- Authority
- CN
- China
- Prior art keywords
- area
- layer
- active layer
- electrode
- ultraviolet detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
The embodiment of the invention discloses a unit pixel structure of an ultraviolet detector, and the unit pixel structure comprises an ultraviolet detector and a reading circuit which is connected with the ultraviolet detector, wherein the reading circuit consists of one or a plurality of TFT (Thin Film Transistor) devices; a first active layer of the TFT device of the reading circuit and a photoelectric detection layer of the ultraviolet detector are amorphous state oxide semiconductors. As both the active layer of the device of the reading circuit and the photoelectric detection layer of the ultraviolet detector are the amorphous state oxide semiconductors, the ultraviolet detector and the reading circuit can be integrated on the substrate of a same plate by utilizing the high migration rate and excellent ultraviolet photoelectric response characteristic of the amorphous state oxide semiconductors, so that the pixel structure is more simple, more efficient, lower in cost and more suitable for large-area ultraviolet detector arrays.
Description
Technical field
The present invention relates to semiconductor fabrication, more particularly, relate to a kind of dot structure, Ultraviolet Detector System and manufacture method thereof of semiconductor ultraviolet detection device.
Background technology
In recent years, along with the research in the fields such as astronomy, high-energy physics, space technology and deepening continuously of the work of exploration, ultraviolet detection technology and detecting material are had higher requirement.Ultraviolet (UV) Detection Techniques are the another dual-use detecting techniques that grow up after infrared and Laser Detection Technique, and very high using value is all arranged aspect military and civilian.In the military affairs, the ultraviolet detection technology can be used for the fields such as missile guidance, missile warning, Ultraviolet Communication, ultraviolet interference, electrooptical countermeasures, and these have caused the great attention of the military.The ultraviolet detection technology is at civil area towel, and ultraviolet measurement, flame detecting, biological effect, horizon communication and the environment pollution detection etc. that can be used for ultraviolet astronomy, the assimilation of ultraviolet resin, combustion enginnering and ultraviolet purifying water process towel are the field very widely.
Than the traditional infrared detector, ultraviolet detection possesses unique advantage: such as ultraviolet detection can be used for surveying by day guided missile or aircraft, if with infrared, can be subjected to daylight impression this moment.Ultraviolet ray is absorbed (200-290nm, day blind area) when entering atmosphere, infrared ray then can pass atmosphere, so the infrared interference ratio in the atmospheric environment is more serious, and ultraviolet environments is relatively clean.So ultraviolet detector can be in strong infrared interference environment test calorimetric source.And also whether surveying dangerous thermal source with the ultraviolet heat detector in the gas station that has now.And Infrared Detectors just produces false alarm easily because the interference thermal source is too many.
The key of ultraviolet detection technology is development high sensitivity, low noise ultraviolet detector.The detector of ultraviolet imagery can roughly be divided into two classes: photocathode detector and semiconductor detector.Compare the photocathode detector, semiconductor ultraviolet detection is not only compacter, and is firmer, has higher quantum efficiency, and driving voltage is lower, and can also obtain better stability in hot environment.According to the photodetection material, typical ultraviolet solid probe has Si (perhaps GeSi, PtSi etc.) ultraviolet detector, SiC ultraviolet detector and AlGaN (perhaps GaN) ultraviolet detector.The process of making comprises chemical vapour deposition technique (CVD), metal-organic chemical vapor deposition equipment method (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), sol-gel process (SOL-GEL), hydro thermal method etc.Semi-conducting material generally is in polycrystalline attitude, crystalline state or superlattice in the said method.
In addition, ZnO also can be used as the photodetection material of ultraviolet detector, and ZnO is a kind of direct band gap broad stopband oxide semiconductor material, and its energy gap is about 3.37eV under the room temperature, and the exciton recombination energy is up to 60meV, and ZnO film generally is in polycrystalline attitude or crystalline state.Moreover, ZnO also has the advantages such as growth temperature low, lower electronics induced defects, threshold voltage are low, and raw material be easy to get, inexpensive, pollution-free.Common manufacture method is magnetron sputtering method (Sputter), chemical vapour deposition technique (CVD), metal-organic chemical vapor deposition equipment method (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), sol-gel process (SOL-GEL), hydro thermal method etc.
Yet, above-mentioned existing semiconductor ultraviolet detection device, its used photodetection material is in polycrystalline attitude or crystalline state, and manufacturing cost is high, and photoelectric efficiency is lower, but along with the raising of detection application demand, photoelectric efficiency is also had higher requirement.
Summary of the invention
The embodiment of the invention provides a kind of dot structure, Ultraviolet Detector System and manufacture method thereof of ultraviolet detector, by forming the semi-conductive photodetection layer of non-crystal oxide, improves photoelectric efficiency, has also reduced cost simultaneously.
For achieving the above object, the embodiment of the invention provides following technical scheme:
A kind of ultraviolet detector, comprise: ultraviolet detector and the reading circuit that is connected with ultraviolet detector, described reading circuit is comprised of one or more TFT devices, and the first active layer of the TFT device of described reading circuit and the photodetection layer of described ultraviolet detector are the non-crystal oxide semiconductor.
Alternatively, described ultraviolet detector is MSM type or TFT type.
Alternatively, described unit picture element structure comprises: substrate, and described substrate has first area and second area; One or more TFT devices on the first area comprise: first grid electrode, the first grid insulating barrier on the first grid electrode, the first active layer on the first grid insulating barrier, the first source-drain electrode on the first active layer of first grid electrode both sides; MSM type ultraviolet detector on the second area comprises: photodetection layer, the second electrode on the photodetection layer; And the passivation layer that covers the first source-drain electrode, the first active layer, photodetection layer and the second electrode, the light shielding layer on the passivation layer of the first active layer.
Alternatively, described unit picture element structure comprises: substrate, and described substrate has first area and second area; One or more TFT devices on the first area comprise: first grid electrode, the first grid insulating barrier on the first grid electrode, the first active layer on the first grid insulating barrier, the first source-drain electrode on the first active layer of first grid electrode both sides; TFT type ultraviolet detector on the second area comprises: second gate electrode, the second gate insulating barrier on the second gate electrode, the photodetection layer on the second gate insulating barrier, the second source-drain electrode on the photodetection layer of second gate electrode both sides; And, cover the passivation layer of the first source-drain electrode, the first active layer, photodetection layer and the second source-drain electrode, the light shielding layer on the passivation layer of the first active layer.
Alternatively, described reading circuit is PPS, APS or DPS.
Alternatively, described photodetection layer or the first active layer are selected to form from the group that comprises following element: InGaZnO, InZnO, HfInZnO, TaInZnO, ZrInZnO, YInZnO, AlInZnO, SnInZnO, TiO
2, In
2O
3, ZTO, ITO, ZnO or SnO
x
In addition, the present invention also provides a kind of manufacture method of unit picture element structure of above-mentioned ultraviolet detector, comprising:
Substrate is provided, and described substrate has first area and second area;
Substrate in described first area forms first grid electrode;
Cover described first grid electrode, form first grid insulating barrier at first grid electrode and second area;
First grid insulating barrier in described first area forms the first active layer, and forms the photodetection layer at the first grid insulating barrier of described second area, and wherein, described the first active layer and photodetection layer are the non-crystal oxide semiconductor;
The first active layer in described first grid electrode both sides forms the first source-drain electrode, and forms the second electrode at the photodetection layer;
Cover described the first source-drain electrode, the second electrode and the first active layer, photodetection layer formation passivation layer;
Passivation layer in described first area forms light shielding layer;
Wherein, formed the reading circuit that is comprised of the TFT device in the first area, formed the ultraviolet detector of MSM type at second area, described reading circuit is electrically connected with ultraviolet detector.
In addition, the present invention also provides the manufacture method of the unit picture element structure of another kind of above-mentioned ultraviolet detector, comprising:
Substrate is provided, and described substrate has first area and second area;
Form first grid electrode in described first area, and form the second gate electrode at described second area;
Cover first grid electrode and form first grid insulating barrier in described first area, and cover the second gate electrode at described second area formation second gate insulating barrier;
Form the first active layer at described first grid insulating barrier, and form the photodetection layer at described second gate insulating barrier, wherein, described the first active layer and photodetection layer are the non-crystal oxide semiconductor;
The first active layer in described first grid electrode both sides forms the first source-drain electrode, and forms the second source-drain electrode at the photodetection layer of second gate electrode both sides;
Cover described the first source-drain electrode, the second source-drain electrode and the first active layer, photodetection layer formation passivation layer;
Passivation layer in described first area forms light shielding layer;
Wherein, formed the reading circuit that is comprised of the TFT device in the first area, formed the ultraviolet detector of TFT type at second area, described reading circuit is electrically connected with ultraviolet detector.
In addition, the present invention also provides a kind of Ultraviolet Detector System, comprises the detector array that is comprised of such as each described unit picture element structure among the claim 1-6 a plurality of, and the treatment circuit array that is connected with described detector array.
Alternatively, described treatment circuit array comprises Change sensitive amplify device, ADC, DSP, I/O, control logic and/or scanning circuit.
Alternatively, described treatment circuit array is comprised of the TFT device, and the active layer of the TFT device of described treatment circuit array is the non-crystal oxide semiconductor.
Alternatively, described detector array and described treatment circuit array are formed on the same substrate.
In addition, the present invention also provides the manufacture method of above-mentioned Ultraviolet Detector System, comprising:
Substrate is provided, and described substrate has first area, second area and the 3rd zone;
Form first grid electrode in described first area, and form the 3rd gate electrode in the 3rd zone;
Cover described first grid electrode, form first grid insulating barrier at first grid electrode and second area, and cover described the 3rd gate electrode, form the 3rd gate insulation layer at the 3rd grid;
First grid insulating barrier in described first area forms the first active layer, and form the photodetection layer at the first grid insulating barrier of described second area, and forming the 3rd active layer at the 3rd gate insulation layer in described the 3rd zone, the first active layer, the 3rd active layer and photodetection layer are the non-crystal oxide semiconductor;
The first active layer in described first grid electrode both sides forms the first source-drain electrode, and forms the second electrode at the photodetection layer, and forms the 3rd source-drain electrode at the 3rd active layer in described the 3rd gate electrode both sides;
Cover described the first source-drain electrode, the second electrode, the 3rd source-drain electrode and the first active layer, the 3rd active layer, photodetection layer formation passivation layer;
In described first area and the passivation layer in the 3rd zone form light shielding layer;
Wherein, formed the reading circuit that formed by the TFT device in the first area, formed the ultraviolet detector of TFT type and formed the treatment circuit that is formed by the TFT device in the 3rd zone at second area, single reading circuit and ultraviolet detector form the unit picture element structure, and described unit picture element structure is electrically connected with described treatment circuit.
The present invention also provides another manufacture method of above-mentioned Ultraviolet Detector System, comprising:
Substrate is provided, and described substrate has first area, second area and the 3rd zone;
Form first grid electrode in described first area, form the second gate electrode and form the 3rd gate electrode in described the 3rd zone at described second area;
Covering first grid electrode forms first grid insulating barrier, covers the second gate electrode at described second area formation second gate insulating barrier and covers the 3rd gate electrode at described the 3rd zone formation the 3rd gate insulation layer in described first area;
Form the first active layer, form the photodetection layer and form the 3rd active layer at described the 3rd gate insulation layer at described second gate insulating barrier at described first grid insulating barrier, wherein, described the first active layer, the 3rd active layer and photodetection layer are the non-crystal oxide semiconductor;
The first active layer in described first grid electrode both sides forms the first source-drain electrode, the photodetection layer in second gate electrode both sides forms the second source-drain electrode and the photodetection layer in the 3rd gate electrode both sides forms the 3rd source-drain electrode;
Cover described the first source-drain electrode, the second source-drain electrode, the 3rd source-drain electrode and the first active layer, the 3rd active layer, photodetection layer formation passivation layer;
In described first area and the passivation layer in the 3rd zone form light shielding layer;
Wherein, formed the reading circuit that formed by the TFT device in the first area, formed the ultraviolet detector of TFT type and formed the treatment circuit that is formed by the TFT device in the 3rd zone at second area, single reading circuit and ultraviolet detector form the unit picture element structure, and described unit picture element structure is electrically connected with described treatment circuit.
Compared with prior art, technique scheme has the following advantages:
The unit picture element structure of the ultraviolet detector of the embodiment of the invention, ultraviolet detector and manufacture method thereof, the unit picture element structure and the ultraviolet detector that have the semi-conductive reading circuit device of non-crystal oxide and ultraviolet detection device by formation, and because the active layer of the device of reading circuit and the photodetection layer of ultraviolet detector all are the non-crystal oxide semiconductor, utilize the semi-conductive high mobility of non-crystal oxide and outstanding ultraviolet light photo response characteristic, ultraviolet detector and reading circuit can be integrated on the substrate of same any flat board, more simple efficient and cost is low, be more applicable for the dot structure of large-area ultraviolet detector array.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Deliberately do not draw accompanying drawing by actual size equal proportion convergent-divergent, focus on illustrating purport of the present invention.
Fig. 1-3 is the circuit diagram according to the unit picture element structure of the ultraviolet detector of the embodiment of the invention one;
Fig. 4 is the structural representation according to the unit picture element structure of the ultraviolet detector of the embodiment of the invention one;
Fig. 5 is the circuit diagram according to the unit picture element structure of the ultraviolet detector of the embodiment of the invention two;
Fig. 6 is the structural representation according to the unit picture element structure of the ultraviolet detector of the embodiment of the invention two;
Fig. 7 is the schematic diagram of Ultraviolet Detector System according to an embodiment of the invention;
Fig. 8 is the schematic diagram of the Ultraviolet Detector System of another embodiment according to the present invention;
Fig. 9 is the circuit diagram according to the Ultraviolet Detector System of the embodiment of the invention
Figure 10 is the structural representation of Ultraviolet Detector System according to an embodiment of the invention;
Figure 11 is the structural representation of the Ultraviolet Detector System of another embodiment according to the present invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization in the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when the embodiment of the invention is described in detail in detail; for ease of explanation; the profile of expression device architecture can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Described as background technology, traditional ultraviolet detector adopts the semi-conducting material of polycrystalline attitude or crystalline state as the photodetection material more, and the cost of these materials is high, photoelectric efficiency is lower, for this reason, the present invention proposes a kind of unit picture element structure of ultraviolet detector, the unit picture element structure of the ultraviolet detector by forming the semi-conductive photodetection layer of non-crystal oxide and the reading circuit device of the semi-conductive active layer of non-crystal oxide, detector and reading circuit can be integrated on the same substrate, reduce manufacturing cost, improve photoelectric efficiency.
The unit picture element structure of above-mentioned ultraviolet detector, comprise ultraviolet detector and the reading circuit that is connected with ultraviolet detector, described reading circuit is comprised of one or more TFT devices, and the first active layer of the TFT device of described reading circuit and the photodetection layer of described ultraviolet detector are the non-crystal oxide semiconductor.
Wherein, described ultraviolet detector can be MSM (metal-semiconductor-metal) type or TFT (thin-film transistor) type, and the photodetection layer of described ultraviolet detector adopts the non-crystalline oxide semiconductor.
Wherein, described reading circuit is comprised of the TFT device, the active layer of described TFT device adopts the non-crystalline oxide semiconductor, and described reading circuit can be PPS (Passive Pixel Sensor), APS (Active Pixel Sensor) or DPS (Digital Pixel Sensor) or other circuit that are comprised of one or more TFT devices.
In this application, described non-crystal oxide semiconductor can be zno-based semi-conducting material or other binary except the zno-based semiconductor of mixing In or the multicomponent amorphous oxide semiconductor material of mixing In, the described zno-based semi-conducting material of mixing In is InGaZnO for example, InZnO, HfInZnO, TaInZnO, ZrInZnO, YInZnO, AlInZnO, SnInZnO etc., wherein the outer-shell electron in the In atom is main conduction electrons source, conduct electricity by adjacent oxygen room, the Zn atom plays the effect of stablizing crystallite born of the same parents structure, and Ga, Hf, Ta, Zr, Y, Al, thereby the grade in an imperial examinations such as Sn three dopants play the generation rate in control oxygen room changes semi-conductive conductance, the atom counting of mixing [In]/([In]+[the 3rd dopant]) in the ZnO based semiconductor of In is than being 35%～80%, and the atom of [Zn]/([In]+[Zn]) is counted than being 40%～85%.Preferred each element atom counting is than being [In]: [the 3rd dopant]: [Zn]: [O]=1: 1: 1: 1 or 1: 1: 1: 2 or 2: 2: 2: 1 or 1: 1: 1: 4 etc.Described other binary or multicomponent amorphous oxide semiconductor material be TiO for example
2, In
2O
3, ZTO, ITO (In
2O
3: Sn), ZnO or SnO
xDeng.
Utilize the semi-conductive high mobility of non-crystal oxide and outstanding ultraviolet light photo response characteristic, ultraviolet detector and reading circuit can be integrated on the substrate of same any flat board, so that integrated planar array structure with ultraviolet detector of pixel switch (reading circuit), with respect to the ultraviolet detector of conventional hybrid formula (ultraviolet detector and reading circuit integrated select respectively different technique and material manufacturing), more simple efficient and cost is low, be more applicable for the dot structure of large-area ultraviolet detector array.
More than the technical scheme of the unit picture element structure of ultraviolet detector of the present invention is described in detail, based on above-mentioned thought, below will be described in detail specific embodiment.
Embodiment one
The unit picture element structure of the ultraviolet detector of the embodiment of the invention one, shown in figure 1-3, wherein, ultraviolet detector is the ultraviolet detector 102 of MSM type, described reading circuit 101 is that single or multiple TFT devices form, and the active layer of the TFT device of reading circuit and the photodetection layer of ultraviolet detector are the non-crystal oxide semiconductor.
In certain embodiments, described reading circuit 101 is the PPS circuit of single TFT device 101-1, as shown in Figure 1, independently control the output of single ultraviolet detector 102 signals by TFT device 101-1 switching characteristic, avoided integrating circuit to process the low signal-to-noise ratio of ranks signals.
In further embodiments, described reading circuit is the reading circuit 101 of the APS of a plurality of TFT devices compositions, as shown in Figure 2, APS is integrated amplifier 101-2 and restorer 101-3 on the PPS basis, further strengthen the signal strength signal intensity of single detector 102, improve signal to noise ratio, and eliminate " twilight sunset " effect.
In other embodiment, described reading circuit is the reading circuit 101 of the DPS of a plurality of TFT devices compositions, as shown in Figure 3, DPS integrated online signal processing circuit further on APS, comprise analog to digital converter (ADC), Digital Signal Processing (DSP), memory etc., not only improved online signal to noise ratio, avoided the loss of signal, promote signal response speed, and can realize online " staring " function.
The reading circuit that above TFT device forms is example only, and the reading circuit among the present invention can also be the reading circuit of the other types that are comprised of the TFT device.
Because the active layer of the TFT device of reading circuit and the photodetection layer of ultraviolet detector all are the non-crystal oxide semiconductor, utilize the semi-conductive high mobility of non-crystal oxide and outstanding ultraviolet light photo response characteristic, ultraviolet detector and reading circuit can be integrated on the substrate of same any flat board, more simple efficient and cost is low, be more applicable for the dot structure of large-area ultraviolet detector array.
As shown in Figure 4, Fig. 4 is the structural representation according to the unit picture element structure of the ultraviolet detector of present embodiment one, and described unit picture element structure comprises:
One or more TFT devices on the 200-1 of first area, comprise: first grid electrode 202, first grid insulating barrier 204 on the first grid electrode 202, the first active layer 206 on the first grid insulating barrier 204, the first source-drain electrode 210 on the first active layer 206 of first grid electrode 202 both sides;
MSM type ultraviolet detector on the second area 200-2 comprises: photodetection layer 208, the second electrode 212 on the photodetection layer 208; And
Cover the light shielding layer 216 on the passivation layer 214 of passivation layer 214, the first active layers 206 of the first source-drain electrode 210, the first active layer 214, photodetection layer 208 and the second electrode 212.
Wherein, one or more TFT devices on the described first area 200-1 form reading circuit, described reading circuit can be PPS, APS or DPS circuit or other circuit that is comprised of the TFT device, MSM device on the described second area 200-2 is ultraviolet detector, reading circuit is electrically connected with the ultraviolet detector of described MSM type, and described the first active layer 206 and photodetection layer 208 are the non-crystal oxide semiconductor.
In addition, between the substrate of described photodetection layer 208 and second area 200-2, can also comprise first grid insulating barrier 204, with compatible with the manufacturing of first area TFT device better in manufacture process, improve integrated level.
In the present embodiment, described substrate 200 can and provide support for dielectric substrate, its material for example (is preferably silicon-on-insulator SOI for the surface for the silicon chip of silicon dioxide, also can make in body silicon substrate deposition or thermal oxidation the laying of silicon dioxide), glass (can be doped to boron-phosphorosilicate glass BPSG commonly used, also can be spin-coating glass SOG, glass substrate preferably has rectangular shape to be suitable for cutting and large tracts of land manufacturing), quartz, plastics (being preferably the composition with higher melt and hardness and good insulation properties) etc.Described substrate can also adopt the substrate of other any types.
Described first grid electrode 202, the first source-drain electrode 210 or the second electrode 212 can be polysilicon or other suitable electrode materials of metal material, doping, such as polysilicon of Mo, Pt, Al, Ti, Co, Au, doping etc.
Described first grid insulating barrier 204 can be silica, silicon nitride, high K medium material or other suitable dielectric materials.
Described passivation layer 214 can be silica, silicon oxynitride or low k dielectric materials or other suitable materials.Described light shielding layer can be metal, polysilicon, amorphous silicon or other suitable materials, such as Mo, Pt, Al, Ti, Co, Au, polysilicon or amorphous silicon etc., incident ray with the TFT device in the shielding reading circuit, thereby the semi-conductive ultraviolet light photo response characteristic of the non-crystal oxide that shields the first active layer is only used it as the device of reading circuit.
Described the first active layer 206 and photodetection layer 208 are the non-crystal oxide semiconductor, can be arbitrary above-mentioned amorphous oxide semiconductor material.
More than circuit and the structure of the unit picture element structure of the ultraviolet detector of embodiment one is described in detail, reach for a better understanding of the present invention embodiment, with reference to figure 4, below will the manufacture method of above-described embodiment be described in detail.
At step S101, substrate 200 is provided, described substrate has first area 200-1 and second area 200-2.
In one embodiment, described substrate can be the silicon chip of silicon dioxide for the surface, and the first area of described substrate can be used to form reading circuit, and the second area of described substrate can be used to form MSM type ultraviolet detector.
At step S102, at the substrate formation first grid electrode 202 of described first area 200-1.
In one embodiment, can adopt the method for sputter and carry out patterning, form the first grid electrode on the substrate of first area.
At step S103, cover described first grid electrode 202, form first grid insulating barrier 204 at first grid electrode 202 and second area 200-2.
In one embodiment, can pass through the method formation first grid insulating barrier of chemical vapor deposition (CVD).
At step S104, first grid insulating barrier 204 at described first area 200-1 forms the first active layer 206, and form photodetection layers 208 at the first grid insulating barrier 204 of described second area 200-2, wherein, described the first active layer 206 and photodetection layer 208 are the non-crystal oxide semiconductor.
Can form the first active layer 206 and photodetection layer 208 by magnetron sputtering method (Sputter), chemical vapour deposition technique (CVD), metal-organic chemical vapor deposition equipment method (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), sol-gel process (SOL-GEL), hydro thermal method etc.
In a preferred embodiment, can form the non-crystalline oxide semi-conducting material at first grid insulating barrier by magnetron sputtering method, then carry out patterning, thereby form non-crystal oxide semiconductor the first active layer, form non-crystal oxide semiconductor optoelectronic detecting layer at the first grid insulating barrier of described second area at the first grid insulating barrier of first area, among this embodiment, the first active layer has identical amorphous oxide semiconductor material with the photodetection layer, among other embodiment, it can also be different amorphous oxide semiconductor materials.
At step S105, the first active layer 206 in described first grid electrode 202 both sides forms the first source-drain electrode 210, and forms the second electrode 212 at photodetection layer 208.
Can form the first source-drain electrode and the second electrode by sputter or other suitable methods.
Alternatively, after forming the first source-drain electrode and the second electrode, can also further form interconnection structure, realize between the device on the first area and/or with second area on device between be electrically connected.
At step S106, cover described the first source-drain electrode 210, the second electrode 212 and the first active layer 206, photodetection layer 208 formation passivation layer 214.
In one embodiment, can pass through the method deposit formation passivation layer of chemical vapor deposition (CVD).
At step S107, at the passivation layer 214 formation light shielding layers 216 of described first area 200-1.
In one embodiment, method that can be by sputter is also carried out patterning, and the passivation layer in the first area forms light shielding layer, to shield this zone incident ray.
So far, formed the unit picture element structure of one ultraviolet detector of the embodiment of the invention, wherein, formed the reading circuit that is comprised of the TFT device in the first area, formed the ultraviolet detector of MSM type at second area, described reading circuit is electrically connected with ultraviolet detector.
Be among the embodiment of single TFT device at reading circuit, can realize being electrically connected of reading circuit and ultraviolet detector by the connection between the first source-drain electrode and the second electrode, be among the embodiment of a plurality of TFT devices at reading circuit, can realize being electrically connected of reading circuit and ultraviolet detector by the connection between the first source-drain electrode and the second electrode and/or the interconnection structure that further forms.
Embodiment two
The aspect that the below will be only be different from embodiment one with regard to embodiment two is set forth.The part of not describing will be understood that with embodiment one and has adopted identical structure, material, step, method or technique to carry out, and does not therefore repeat them here.
Different from embodiment one is, in the unit picture element structure of the ultraviolet detector of the embodiment of the invention two, with reference to shown in Figure 5, ultraviolet detector is the ultraviolet detector 102 of TFT type, described reading circuit 101 is that single or multiple TFT devices form, described reading circuit can be the PPS circuit that single TFT device 101-1 forms, APS, the DPS that also can form for a plurality of TFT devices or other reading circuits (scheme not shown, but the reading circuit in the reference example one).
As shown in Figure 6, Fig. 6 is the structural representation according to the unit picture element structure of the ultraviolet detector of present embodiment two, and described unit picture element structure comprises:
One or more TFT devices on the 300-1 of first area, comprise: first grid electrode 302, first grid insulating barrier 306 on the first grid electrode 302, the first active layer 310 on the first grid insulating barrier 306, the first source-drain electrode 316 on the first active layer 310 of first grid electrode 302 both sides;
TFT type ultraviolet detector on the second area 300-2, comprise: second gate electrode 304, second gate insulating barrier 308 on the second gate electrode 304, the photodetection layer 312 on the second gate insulating barrier 308, the second source-drain electrode 318 on the photodetection layer 312 of second gate electrode 304 both sides; And,
Cover the light shielding layer 320 on the passivation layer 322 of passivation layer 322, the first active layers 310 of the first source-drain electrode 316, the first active layer 310, photodetection layer 312 and the second source-drain electrode 318.
Wherein, one or more TFT devices on the described first area form reading circuit, described reading circuit can be PPS, APS or DPS circuit or other circuit that is comprised of the TFT device, TFT device on the described second area is ultraviolet detector, reading circuit is electrically connected with the ultraviolet detector of described TFT type, and described the first active layer and photodetection layer are the non-crystal oxide semiconductor.
Device on the described first area and structure do not repeat them here with the device on the first area among the embodiment one and structure.
Device on the described second area is the ultraviolet detection device of TFT type, in the present embodiment, second gate electrode, the second source-drain electrode can be polysilicon or other suitable electrode materials of metal material, doping, such as polysilicon of Mo, Pt, Al, Ti, Co, Au, doping etc.; Described second gate insulating barrier can be silica, silicon nitride, high K medium material or other suitable dielectric materials.Described the first active layer and photodetection layer are the non-crystal oxide semiconductor, can be arbitrary above-mentioned amorphous oxide semiconductor material.
More than circuit and the structure of the unit picture element structure of the ultraviolet detector of embodiment two is described in detail, reach for a better understanding of the present invention embodiment, with reference to figure 6, below will the manufacture method of above-described embodiment be described in detail.
At step S201, substrate 300 is provided, described substrate has first area 300-1 and second area 300-2.
In one embodiment, described substrate can be the silicon chip of silicon dioxide for the surface, and the first area of described substrate can be used to form reading circuit, and the second area of described substrate can be used to form TFT type ultraviolet detector.
At step S202, form first grid electrode 302 at described first area 300-1, and form second gate electrode 304 at described second area 300-2.
In one embodiment, can pass through the splash-proofing sputtering metal material, then carry out patterning, form first grid electrode, second area formation second gate electrode in the first area, among this embodiment, described the first and second gate electrodes are identical metal electrode material, in other embodiments, can be by repeatedly forming sediment and graphically, forming first grid electrode and the second gate electrode of different electrode materials.
At step S203, cover first grid electrode 302 and form first grid insulating barrier 306 at described first area 300-1, and cover second gate electrode 304 at described second area 300-2 formation second gate insulating barrier 308.
In one embodiment, can pass through the method deposit gate insulation material of chemical vapor deposition (CVD), form first grid insulating barrier and second gate insulating barrier, in this embodiment, described the first and second gate insulation layers are identical gate insulation material, in other embodiments, described the first and second gate insulation layers can also be different gate insulation materials.
At step S204, form the first active layer 310 at described first grid insulating barrier 306, and form photodetection layer 312 at described second gate insulating barrier 304, wherein, described the first active layer 310 and photodetection layer 312 are the non-crystal oxide semiconductor.
In a preferred embodiment, can form the non-crystalline oxide semi-conducting material at the first and second gate insulation layers by magnetron sputtering method, then carry out patterning, thereby the first grid insulating barrier in the first area forms non-crystal oxide semiconductor the first active layer, second gate insulating barrier at described second area forms non-crystal oxide semiconductor optoelectronic detecting layer, among this embodiment, the first active layer has identical amorphous oxide semiconductor material with the photodetection layer, among other embodiment, it can also be different amorphous oxide semiconductor materials.
At step S205, the first active layer 310 in described first grid electrode 302 both sides forms the first source-drain electrode 316, and forms the second source-drain electrode 318 at the photodetection layer 312 of second gate electrode 304 both sides.
Can form the first source-drain electrode and the second source-drain electrode by sputter or other suitable methods.
Alternatively, after forming the first source-drain electrode and the second electrode, can also further form interconnection structure, realize between the device on the first area and/or with second area on device between be electrically connected.
At step S206, cover described the first source-drain electrode 316, the second source-drain electrode 318 and the first active layer 310, photodetection layer 312 formation passivation layer 322.
In one embodiment, can pass through the method deposit formation passivation layer of chemical vapor deposition (CVD).
At step S207, at the passivation layer 322 formation light shielding layers 320 of described first area 300-1.
In one embodiment, method that can be by sputter is also carried out patterning, and the passivation layer in the first area forms light shielding layer, to shield this zone incident ray.
So far, formed the unit picture element structure of two ultraviolet detector of the embodiment of the invention, wherein, formed the reading circuit that is comprised of the TFT device in the first area, formed the ultraviolet detector of TFT type at second area, described reading circuit is electrically connected with ultraviolet detector.
Be among the embodiment of single TFT device at reading circuit, as shown in Figure 6, can realize being electrically connected of reading circuit and ultraviolet detector by the connection between the first source-drain electrode and the second source-drain electrode, be among the embodiment of a plurality of TFT devices at reading circuit, can realize that reading circuit be electrically connected (scheming not shown) with ultraviolet detector by the connection between the first source-drain electrode and the second source-drain electrode and/or the interconnection structure that further forms.
More than unit picture element structure, specific embodiment and the manufacture method thereof of ultraviolet detector of the present invention is described in detail, the detection array that forms for the unit picture element structure of above-mentioned ultraviolet detector, can be used for Ultraviolet Detector System, reduce the cost of Ultraviolet Detector System.
For this reason, the present invention also provides a kind of Ultraviolet Detector System, reference diagram Fig. 7 and shown in Figure 8, comprise the detector array 400 that the unit picture element structure 400a by the arbitrarily ultraviolet detector in a plurality of above-described embodiments forms, and the treatment circuit array 410 that is connected with described detector array 400.
In certain embodiments, as shown in Figure 7, described detector array 400 can be made respectively with treatment circuit array 410, then by indium post 420 interconnection structures such as grade the chips welding of the chip of detector array 400 and treatment circuit array 410 together, realizes Ultraviolet Detector System.
Among the more excellent embodiment, as shown in Figure 8, described detector array 400 can be made simultaneously with treatment circuit array 410, be formed on the same substrate, the technique of relatively making respectively, reduce manufacturing cost, owing to need not the alignment package of multi-chip, also reduced the unfavorable factors such as signal delay, noise and loss of bringing thus.
Wherein, described treatment circuit array comprises Change sensitive amplify device, ADC, DSP, I/O, control logic, scanning circuit and/or other functional circuits, with reference to shown in Figure 9.
Can make simultaneously in order to make detector array 400 and treatment circuit array 410, described treatment circuit array 410 also is comprised of the TFT device, and the active layer of the TFT device of described treatment circuit array also is the non-crystal oxide semiconductor, with reference to Figure 10 and shown in Figure 11, this Ultraviolet Detector System comprises:
Be formed with the structure on the first area among above-described embodiment one or two on the described first area 500-1, be formed with the structure on the second area among above-described embodiment one or two on the described second area 500-2;
When ultraviolet detector is the MSM type, as shown in figure 10, one or more TFT devices on the 500-1 of first area, comprise: first grid electrode 502, first grid insulating barrier 506 on the first grid electrode 502, the first active layer 510 on the first grid insulating barrier 506, the first source-drain electrode 516 on the first active layer 510 of first grid electrode 502 both sides; MSM type ultraviolet detector on the second area 500-2 comprises: photodetection layer 512, the second electrode 518 on the photodetection layer 512; And cover light shielding layer 524 on the passivation layer 522 of passivation layer 522, the first active layers 510 of the first source-drain electrode 516, the first active layer 510, photodetection layer 512 and the second electrode 518.
When ultraviolet detector is the TFT type, as shown in figure 11, one or more TFT devices on the 500-1 of first area, comprise: first grid electrode 602, first grid insulating barrier 606 on the first grid electrode 602, the first active layer 610 on the first grid insulating barrier 606, the first source-drain electrode 616 on the first active layer 610 of first grid electrode 602 both sides; TFT type ultraviolet detector on the second area 500-2, comprise: second gate electrode 603, second gate insulating barrier 607 on the second gate electrode 603, the photodetection layer 612 on the second gate insulating barrier 607, the second source-drain electrode 618 on the photodetection layer 612 of second gate electrode 603 both sides; And, cover the light shielding layer 624 on the passivation layer 622 of passivation layer 622, the first active layers 610 of the first source-drain electrode 616, the first active layer 610, photodetection layer 612 and the second source-drain electrode 618.
Be formed with the TFT device for the treatment of circuit on the described the 3rd regional 500-3, comprise: the 3rd gate electrode 504 on the substrate of the 3rd regional 500-3; The 3rd source-drain electrode 520 on the 3rd active layer 514 of the 3rd active layer 514, the three gate electrodes 504 both sides on the 3rd gate insulation layer 508, the three gate insulation layers 508 on the 3rd gate electrode 504; And, cover the light shielding layer 524 on the passivation layer 522 of passivation layer 522, the three active layers 514 of the 3rd active layer 514 and the 3rd source-drain electrode 520; Wherein, the first active layer 510, the 610, the 3rd active layer 514 and photodetection layer 512,612 are the non-crystal oxide semiconductor.
Wherein, form reading circuit in the first area, formed the treatment circuit that is formed by the TFT device at second area formation ultraviolet detector with in the 3rd zone, single reading circuit and ultraviolet detector form unit picture element structure 400a, and described unit picture element structure 400 is electrically connected with described treatment circuit 410a.
Wherein, the first active layer, the 3rd active layer and photodetection layer are the non-crystal oxide semiconductor, can be aforesaid any amorphous oxide semiconductor material.
More than be the structure according to the Ultraviolet Detector System of the embodiment of the invention, in addition, the present invention also provides the manufacture method of above-mentioned Ultraviolet Detector System.
The invention provides the method for the Ultraviolet Detector System of above-mentioned ultraviolet detector for the MSM type, with reference to Figure 10, comprising:
Form first grid electrode 502 at described first area 500-1, and form the 3rd gate electrode 504 at the 3rd regional 500-3;
Cover described first grid electrode 502, form first grid insulating barrier 506 at first grid electrode 502 and second area 500-2, and cover described the 3rd gate electrode 504,504 form the 3rd gate insulation layer 508 on the 3rd grid;
First grid insulating barrier 506 at described first area 500-1 forms the first active layer 510, and form photodetection layers 512 at the first grid insulating barrier 506 of described second area 500-2, and to form the 3rd active layer 514, the first active layers 510, the 3rd active layer 514 and photodetection layer 512 at the 3rd gate insulation layer 508 of described the 3rd regional 500-3 be the non-crystal oxide semiconductor;
The first active layer 510 in described first grid electrode 502 both sides forms the first source-drain electrode 516, and form the second electrode 518 at photodetection layer 512, and form the 3rd source-drain electrode 520 at the 3rd active layer 514 of described the 3rd gate electrode 504 both sides;
Cover described the first source-drain electrode 516, the second electrode 518, the 3rd source-drain electrode 520 and the first active layer 510, the 3rd active layer 514, photodetection layer 512 formation passivation layer 522;
Passivation layer 522 at described first area 500-1 and the 3rd regional 500-3 forms light shielding layer 524;
Wherein, formed the reading circuit that formed by the TFT device in the first area, formed the ultraviolet detector of TFT type and formed the treatment circuit that is formed by the TFT device in the 3rd zone at second area, single reading circuit and ultraviolet detector form unit picture element structure 400a, and described unit picture element structure 400a is electrically connected with described treatment circuit 410a.
The present invention also provides the method for the Ultraviolet Detector System of above-mentioned ultraviolet detector for the TFT type, with reference to Figure 11, comprising:
Form first grid electrode 602, form second gate electrode 603 and form the 3rd gate electrode 504 at the described the 3rd regional 500-3 at described second area 500-2 at described first area 500-1;
Covering first grid electrode 602 forms first grid insulating barrier 606, covers the second gate electrode at described second area formation second gate insulating barrier 607 and covers the 3rd gate electrode at described the 3rd zone formation the 3rd gate insulation layer 508 in described first area;
Form the first active layer 610, form photodetection layer 612 and form the 3rd active layer 514 at described the 3rd gate insulation layer 508 at described second gate insulating barrier 607 at described first grid insulating barrier 606, wherein, described the first active layer 610, the 3rd active layer 514 and photodetection layer 612 are the non-crystal oxide semiconductor;
The first active layer 610 in described first grid electrode 602 both sides forms the first source-drain electrode 616, the photodetection layer 612 in second gate electrode 603 both sides forms the second source-drain electrode 618 and the 3rd active layer 514 in the 3rd gate electrode 504 both sides forms the 3rd source-drain electrode 520;
Cover described the first source-drain electrode 616, the second source-drain electrode 618, the 3rd source-drain electrode 520 and the first active layer 610, the 3rd active layer 514, photodetection layer 612 formation passivation layer 522,622;
Passivation layer at described first area 500-1 and the 3rd regional 500-3 forms light shielding layer 624,524;
Wherein, formed the reading circuit that formed by the TFT device in the first area, formed the ultraviolet detector of TFT type and formed the treatment circuit that is formed by the TFT device in the 3rd zone at second area, single reading circuit and ultraviolet detector form unit picture element structure 400a, and described unit picture element structure 400a is electrically connected with described treatment circuit 410a.
Concrete steps in the manufacture method of above-mentioned Ultraviolet Detector System can adopt method suitable in the prior art to realize, do not repeat them here.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.
Although the present invention discloses as above with preferred embodiment, yet is not to limit the present invention.Any those of ordinary skill in the art, do not breaking away from the technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention according to any simple modification, equivalent variations and the modification that technical spirit of the present invention is done above embodiment, all still belongs in the scope of technical solution of the present invention protection.
Claims (18)
1. the unit picture element structure of a ultraviolet detector, comprise ultraviolet detector and the reading circuit that is connected with ultraviolet detector, it is characterized in that, described reading circuit is comprised of one or more TFT devices, and the first active layer of the TFT device of described reading circuit and the photodetection layer of described ultraviolet detector are the non-crystal oxide semiconductor.
2. unit picture element structure according to claim 1 is characterized in that, described ultraviolet detector is MSM type or TFT type.
3. unit picture element structure according to claim 2 is characterized in that, described unit picture element structure comprises:
Substrate, described substrate has first area and second area;
One or more TFT devices on the first area comprise: first grid electrode, the first grid insulating barrier on the first grid electrode, the first active layer on the first grid insulating barrier, the first source-drain electrode on the first active layer of first grid electrode both sides;
MSM type ultraviolet detector on the second area comprises: photodetection layer, the second electrode on the photodetection layer; And
Cover the passivation layer of the first source-drain electrode, the first active layer, photodetection layer and the second electrode, the light shielding layer on the passivation layer of the first active layer.
4. unit picture element structure according to claim 2 is characterized in that, described unit picture element structure comprises:
Substrate, described substrate has first area and second area;
One or more TFT devices on the first area comprise: first grid electrode, the first grid insulating barrier on the first grid electrode, the first active layer on the first grid insulating barrier, the first source-drain electrode on the first active layer of first grid electrode both sides;
TFT type ultraviolet detector on the second area comprises: second gate electrode, the second gate insulating barrier on the second gate electrode, the photodetection layer on the second gate insulating barrier, the second source-drain electrode on the photodetection layer of second gate electrode both sides; And,
Cover the passivation layer of the first source-drain electrode, the first active layer, photodetection layer and the second source-drain electrode, the light shielding layer on the passivation layer of the first active layer.
5. each described unit picture element structure is characterized in that according to claim 1-4, and described reading circuit is PPS, APS or DPS.
6. each described dot structure according to claim 1-4, it is characterized in that described photodetection layer or the first active layer are selected to form: InGaZnO, InZnO, HfInZnO, TaInZnO, ZrInZnO, YInZnO, AlInZnO, SnInZnO, TiO from the group that comprises following element
2, In
2O
3, ZTO, ITO, ZnO or SnO
x
7. the manufacture method of the unit picture element structure of a ultraviolet detector is characterized in that, comprising:
Substrate is provided, and described substrate has first area and second area;
Substrate in described first area forms first grid electrode;
Cover described first grid electrode, form first grid insulating barrier at first grid electrode and second area;
First grid insulating barrier in described first area forms the first active layer, and forms the photodetection layer at the first grid insulating barrier of described second area, and wherein, described the first active layer and photodetection layer are the non-crystal oxide semiconductor;
The first active layer in described first grid electrode both sides forms the first source-drain electrode, and forms the second electrode at the photodetection layer;
Cover described the first source-drain electrode, the second electrode and the first active layer, photodetection layer formation passivation layer;
Passivation layer in described first area forms light shielding layer;
Wherein, formed the reading circuit that is comprised of the TFT device in the first area, formed the ultraviolet detector of MSM type at second area, described reading circuit is electrically connected with ultraviolet detector.
8. manufacture method according to claim 7, it is characterized in that described the first active layer or photodetection layer are selected to form: InGaZnO, InZnO, HfInZnO, TaInZnO, ZrInZnO, YInZnO, AlInZnO, SnInZnO, TiO from the group that comprises following element
2, In
2O
3, ZTO, ITO, ZnO or SnO
x
9. the manufacture method of the unit picture element structure of a ultraviolet detector is characterized in that, comprising:
Substrate is provided, and described substrate has first area and second area;
Form first grid electrode in described first area, and form the second gate electrode at described second area;
Cover first grid electrode and form first grid insulating barrier in described first area, and cover the second gate electrode at described second area formation second gate insulating barrier;
Form the first active layer at described first grid insulating barrier, and form the photodetection layer at described second gate insulating barrier, wherein, described the first active layer and photodetection layer are the non-crystal oxide semiconductor;
The first active layer in described first grid electrode both sides forms the first source-drain electrode, and forms the second source-drain electrode at the photodetection layer of second gate electrode both sides;
Cover described the first source-drain electrode, the second source-drain electrode and the first active layer, photodetection layer formation passivation layer;
Passivation layer in described first area forms light shielding layer;
Wherein, formed the reading circuit that is comprised of the TFT device in the first area, formed the ultraviolet detector of TFT type at second area, described reading circuit is electrically connected with ultraviolet detector.
10. manufacture method according to claim 9, it is characterized in that described the first active layer or photodetection layer are selected to form: InGaZnO, InZnO, HfInZnO, TaInZnO, ZrInZnO, YInZnO, AlInZnO, SnInZnO, TiO from the group that comprises following element
2, In
2O
3, ZTO, ITO, ZnO or SnO
x
11. a Ultraviolet Detector System is characterized in that, comprises the detector array that is comprised of such as each described unit picture element structure among the claim 1-6 a plurality of, and the treatment circuit array that is connected with described detector array.
12. detector system according to claim 11 is characterized in that, described treatment circuit array comprises Change sensitive amplify device, ADC, DSP, I/O, control logic and/or scanning circuit.
13. according to claim 11 or 12 described detector systems, it is characterized in that described treatment circuit array is comprised of the TFT device, the active layer of the TFT device of described treatment circuit array is the non-crystal oxide semiconductor.
14. detector system according to claim 13 is characterized in that, described detector array and described treatment circuit array are formed on the same substrate.
15. the manufacture method of a Ultraviolet Detector System is characterized in that, comprising:
Substrate is provided, and described substrate has first area, second area and the 3rd zone;
Form first grid electrode in described first area, and form the 3rd gate electrode in the 3rd zone;
Cover described first grid electrode, form first grid insulating barrier at first grid electrode and second area, and cover described the 3rd gate electrode, form the 3rd gate insulation layer at the 3rd grid;
First grid insulating barrier in described first area forms the first active layer, and form the photodetection layer at the first grid insulating barrier of described second area, and forming the 3rd active layer at the 3rd gate insulation layer in described the 3rd zone, the first active layer, the 3rd active layer and photodetection layer are the non-crystal oxide semiconductor;
The first active layer in described first grid electrode both sides forms the first source-drain electrode, and forms the second electrode at the photodetection layer, and forms the 3rd source-drain electrode at the 3rd active layer in described the 3rd gate electrode both sides;
Cover described the first source-drain electrode, the second electrode, the 3rd source-drain electrode and the first active layer, the 3rd active layer, photodetection layer formation passivation layer;
In described first area and the passivation layer in the 3rd zone form light shielding layer;
Wherein, formed the reading circuit that formed by the TFT device in the first area, formed the ultraviolet detector of TFT type and formed the treatment circuit that is formed by the TFT device in the 3rd zone at second area, single reading circuit and ultraviolet detector form the unit picture element structure, and described unit picture element structure is electrically connected with described treatment circuit.
16. manufacture method according to claim 15, it is characterized in that described the first active layer, the 3rd active layer or photodetection layer are selected to form: InGaZnO, InZnO, HfInZnO, TaInZnO, ZrInZnO, YInZnO, AlInZnO, SnInZnO, TiO from the group that comprises following element
2, In
2O
3, ZTO, ITO, ZnO or SnO
x
17. the manufacture method of a Ultraviolet Detector System is characterized in that, comprising:
Substrate is provided, and described substrate has first area, second area and the 3rd zone;
Form first grid electrode in described first area, form the second gate electrode and form the 3rd gate electrode in described the 3rd zone at described second area;
Covering first grid electrode forms first grid insulating barrier, covers the second gate electrode at described second area formation second gate insulating barrier and covers the 3rd gate electrode at described the 3rd zone formation the 3rd gate insulation layer in described first area;
Form the first active layer, form the photodetection layer and form the 3rd active layer at described the 3rd gate insulation layer at described second gate insulating barrier at described first grid insulating barrier, wherein, described the first active layer, the 3rd active layer and photodetection layer are the non-crystal oxide semiconductor;
The first active layer in described first grid electrode both sides forms the first source-drain electrode, the photodetection layer in second gate electrode both sides forms the second source-drain electrode and the 3rd active layer in the 3rd gate electrode both sides forms the 3rd source-drain electrode;
Cover described the first source-drain electrode, the second source-drain electrode, the 3rd source-drain electrode and the first active layer, the 3rd active layer, photodetection layer formation passivation layer;
In described first area and the passivation layer in the 3rd zone form light shielding layer;
Wherein, formed the reading circuit that formed by the TFT device in the first area, formed the ultraviolet detector of TFT type and formed the treatment circuit that is formed by the TFT device in the 3rd zone at second area, single reading circuit and ultraviolet detector form the unit picture element structure, and described unit picture element structure is electrically connected with described treatment circuit.
18. manufacture method according to claim 17, it is characterized in that described the first active layer, the 3rd active layer or photodetection layer are selected to form: InGaZnO, InZnO, HfInZnO, TaInZnO, ZrInZnO, YInZnO, AlInZnO, SnInZnO, TiO from the group that comprises following element
2, In
2O
3, ZTO, ITO, ZnO or SnO
x
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102069332A CN102891150A (en) | 2011-07-22 | 2011-07-22 | Pixel structure of ultraviolet detector, ultraviolet detector system and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102069332A CN102891150A (en) | 2011-07-22 | 2011-07-22 | Pixel structure of ultraviolet detector, ultraviolet detector system and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102891150A true CN102891150A (en) | 2013-01-23 |
Family
ID=47534610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102069332A Pending CN102891150A (en) | 2011-07-22 | 2011-07-22 | Pixel structure of ultraviolet detector, ultraviolet detector system and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102891150A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015131545A1 (en) * | 2014-03-05 | 2015-09-11 | 北京大学深圳研究生院 | Ultraviolet light sensing circuit and sensing system |
| CN105047674A (en) * | 2015-08-06 | 2015-11-11 | 京东方科技集团股份有限公司 | Array substrate and fabrication method thereof, and display device |
| WO2016201925A1 (en) * | 2015-06-18 | 2016-12-22 | Boe Technology Group Co., Ltd. | Photodetector substrate, photodetector having the same, and method of manufacturing thereof |
| CN107091874A (en) * | 2017-04-06 | 2017-08-25 | 上海理工大学 | The making and application of semiconductor nano ultraviolet detector and gas sensing integrated device |
| CN107527969A (en) * | 2017-07-21 | 2017-12-29 | 中山大学 | A kind of electrolyte Gate oxide semiconductor phototransistors for ultraviolet detector |
| CN108987522A (en) * | 2018-07-25 | 2018-12-11 | 京东方科技集团股份有限公司 | A kind of photoelectric sensor, photoelectric sensing component and preparation method thereof |
| CN109950355A (en) * | 2019-03-11 | 2019-06-28 | 上海奕瑞光电子科技股份有限公司 | Flat panel detector and preparation method thereof |
| CN112490257A (en) * | 2020-12-15 | 2021-03-12 | 南京工业职业技术大学 | GaN-based hybrid three-dimensional imaging and distance measuring device |
| CN113066876A (en) * | 2021-04-29 | 2021-07-02 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet detector and preparation method thereof |
| CN113192992A (en) * | 2021-04-29 | 2021-07-30 | 中国科学院长春光学精密机械与物理研究所 | Preparation method of semiconductor thin film composite structural member |
| CN115377129A (en) * | 2021-05-20 | 2022-11-22 | 松山湖材料实验室 | Deep ultraviolet area array imaging system and pixel structure and manufacturing method thereof |
| WO2023173519A1 (en) * | 2022-03-16 | 2023-09-21 | 武汉华星光电技术有限公司 | Display panel and display terminal |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US73274A (en) * | 1868-01-14 | John s | ||
| JPS6486568A (en) * | 1987-06-16 | 1989-03-31 | Matsushita Electric Ind Co Ltd | Photosensor and image sensor |
| JPH01217966A (en) * | 1988-02-26 | 1989-08-31 | Nippon Telegr & Teleph Corp <Ntt> | Photoconductive type image sensor |
| JPH0990048A (en) * | 1995-09-28 | 1997-04-04 | Canon Inc | Radiation detector |
| US20060108529A1 (en) * | 2004-11-10 | 2006-05-25 | Canon Kabushiki Kaisha | Sensor and image pickup device |
| CN101055881A (en) * | 2007-04-30 | 2007-10-17 | 西安交通大学 | Back shining type ZnO base ultraviolet imaging solid state focal plane detection array and its preparation |
| US20090073274A1 (en) * | 2007-09-14 | 2009-03-19 | Omnivision Technologies, Inc. | Image sensor apparatus and method for improved dynamic range with multiple readout circuit paths |
| TW201119073A (en) * | 2009-11-16 | 2011-06-01 | Univ Nat Chiao Tung | Photo-sensor device with amorphous oxide base semiconductor and fabrication |
-
2011
- 2011-07-22 CN CN2011102069332A patent/CN102891150A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US73274A (en) * | 1868-01-14 | John s | ||
| JPS6486568A (en) * | 1987-06-16 | 1989-03-31 | Matsushita Electric Ind Co Ltd | Photosensor and image sensor |
| JPH01217966A (en) * | 1988-02-26 | 1989-08-31 | Nippon Telegr & Teleph Corp <Ntt> | Photoconductive type image sensor |
| JPH0990048A (en) * | 1995-09-28 | 1997-04-04 | Canon Inc | Radiation detector |
| US20060108529A1 (en) * | 2004-11-10 | 2006-05-25 | Canon Kabushiki Kaisha | Sensor and image pickup device |
| CN101055881A (en) * | 2007-04-30 | 2007-10-17 | 西安交通大学 | Back shining type ZnO base ultraviolet imaging solid state focal plane detection array and its preparation |
| US20090073274A1 (en) * | 2007-09-14 | 2009-03-19 | Omnivision Technologies, Inc. | Image sensor apparatus and method for improved dynamic range with multiple readout circuit paths |
| TW201119073A (en) * | 2009-11-16 | 2011-06-01 | Univ Nat Chiao Tung | Photo-sensor device with amorphous oxide base semiconductor and fabrication |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015131545A1 (en) * | 2014-03-05 | 2015-09-11 | 北京大学深圳研究生院 | Ultraviolet light sensing circuit and sensing system |
| US9983054B2 (en) | 2014-03-05 | 2018-05-29 | Peking University Shenzhen Graduate School | Ultraviolet light sensing circuit and sensing system |
| US10204961B2 (en) | 2015-06-18 | 2019-02-12 | Boe Technology Group Co., Ltd. | Photodetector substrate, photodetector having the same, and method of manufacturing thereof |
| WO2016201925A1 (en) * | 2015-06-18 | 2016-12-22 | Boe Technology Group Co., Ltd. | Photodetector substrate, photodetector having the same, and method of manufacturing thereof |
| CN105047674A (en) * | 2015-08-06 | 2015-11-11 | 京东方科技集团股份有限公司 | Array substrate and fabrication method thereof, and display device |
| WO2017020469A1 (en) * | 2015-08-06 | 2017-02-09 | Boe Technology Group Co., Ltd. | Array substrate and display apparatus including the same, and method for fabricating the same |
| US9881948B2 (en) | 2015-08-06 | 2018-01-30 | Boe Technology Group Co., Ltd. | Array substrate and display apparatus containing the same, and method for fabricating the same |
| CN105047674B (en) * | 2015-08-06 | 2018-09-04 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof and display device |
| CN107091874A (en) * | 2017-04-06 | 2017-08-25 | 上海理工大学 | The making and application of semiconductor nano ultraviolet detector and gas sensing integrated device |
| CN107527969A (en) * | 2017-07-21 | 2017-12-29 | 中山大学 | A kind of electrolyte Gate oxide semiconductor phototransistors for ultraviolet detector |
| CN108987522A (en) * | 2018-07-25 | 2018-12-11 | 京东方科技集团股份有限公司 | A kind of photoelectric sensor, photoelectric sensing component and preparation method thereof |
| CN109950355A (en) * | 2019-03-11 | 2019-06-28 | 上海奕瑞光电子科技股份有限公司 | Flat panel detector and preparation method thereof |
| CN109950355B (en) * | 2019-03-11 | 2021-11-05 | 上海奕瑞光电子科技股份有限公司 | Flat panel detector and manufacturing method thereof |
| CN112490257A (en) * | 2020-12-15 | 2021-03-12 | 南京工业职业技术大学 | GaN-based hybrid three-dimensional imaging and distance measuring device |
| CN112490257B (en) * | 2020-12-15 | 2021-11-09 | 南京工业职业技术大学 | GaN-based hybrid three-dimensional imaging and distance measuring device |
| CN113066876A (en) * | 2021-04-29 | 2021-07-02 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet detector and preparation method thereof |
| CN113192992A (en) * | 2021-04-29 | 2021-07-30 | 中国科学院长春光学精密机械与物理研究所 | Preparation method of semiconductor thin film composite structural member |
| CN113066876B (en) * | 2021-04-29 | 2022-12-06 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet detector and preparation method thereof |
| CN115377129A (en) * | 2021-05-20 | 2022-11-22 | 松山湖材料实验室 | Deep ultraviolet area array imaging system and pixel structure and manufacturing method thereof |
| WO2023173519A1 (en) * | 2022-03-16 | 2023-09-21 | 武汉华星光电技术有限公司 | Display panel and display terminal |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102891150A (en) | Pixel structure of ultraviolet detector, ultraviolet detector system and manufacturing method thereof | |
| CN102694053B (en) | Semiconductor device and manufacture method thereof | |
| US8278549B2 (en) | TCO-based hybrid solar photovoltaic energy conversion apparatus | |
| TWI536548B (en) | Semiconductor device | |
| US8497535B2 (en) | Multilayered photodiode and method of manufacturing the same | |
| CN102694052A (en) | Semiconductor device and manufacturing method thereof | |
| CN103137641B (en) | A kind of array base palte and preparation method thereof, X-ray flat panel detector | |
| CN102386269B (en) | GaN-based ultraviolet detector with p-i-p-i-n structure and preparation method thereof | |
| CN102832269B (en) | Photodetection lamination, semiconductor ultraviolet detection device and manufacture method thereof | |
| US8669626B2 (en) | Optical sensor, optical sensor array, optical sensor driving method, and optical sensor array driving method | |
| CN101533868B (en) | Heterogenous pn junction solar blind ultraviolet detector | |
| CN103076099B (en) | Single-chip integration infrared focal plane detector | |
| EP2932534B1 (en) | Pixelated imager with motft and process | |
| KR20150107633A (en) | Imaging device | |
| CN101901849A (en) | Optical semiconductor device | |
| CN107634079A (en) | Photoelectric sensor and its manufacture method | |
| JP2007273455A (en) | Oxide film transparent conductive film, and transparent conductive base material, thin film transistor substrate, photoelectric conversion element and photo detector using the same | |
| CN101409311B (en) | Silicon-based double hetero-junction visible blind ultraviolet detector and manufacturing method thereof | |
| CN104538484A (en) | Epitaxial structure of wavelength expansion type InGaAs avalanche photodiode | |
| CN108346713B (en) | Visible-short wave infrared detector and preparation method thereof | |
| WO1983002038A1 (en) | Semiconductor photoelectric converter | |
| CN110890436B (en) | Waveguide type GeSn photoelectric transistor and manufacturing method thereof | |
| CN101661944B (en) | Pixel unit structure of ultraviolet image sensor and preparation method thereof | |
| CN103378211A (en) | Solar cell unit and manufacturing method thereof | |
| US8836070B2 (en) | Photo diode, method of manufacturing the photo-diode, and photo sensor including the photo diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20130123 |