CN102891134A - Plasma damage test structure based on metal oxide semiconductor (MOS) capacitor - Google Patents
Plasma damage test structure based on metal oxide semiconductor (MOS) capacitor Download PDFInfo
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- CN102891134A CN102891134A CN2011102002188A CN201110200218A CN102891134A CN 102891134 A CN102891134 A CN 102891134A CN 2011102002188 A CN2011102002188 A CN 2011102002188A CN 201110200218 A CN201110200218 A CN 201110200218A CN 102891134 A CN102891134 A CN 102891134A
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Abstract
The invention relates to a metal oxide semiconductor (MOS) capacitor which is applied to measure plasma damage and provided with a metal antenna structure. The MOS capacitor comprises electrode antennas, insulating materials, through holes, polysilicons, a grid and a silicon substrate. The structure of the MOS capacitor is characterized in that the antennas are uniformly connected with polysilicon electrodes of the MOS capacitor by the through holes and can be used for collecting electrons and ions bombarded on the antennas, wherein the antennas are of an insert shape and a square shape. By measuring the leakage current of the capacitor, the capacitance-voltage (C-V) characteristic curve and the time dependent dielectric breakdown (TDDB), the plasma damage of etching and photoresist removing processes in a plasma process can be detected and evaluated.
Description
[technical field]
The present invention relates to a kind of novel plasma process damage test structure based on mos capacitance, can be by measuring leakage current, C-V characteristic curve and the TDDB of electric capacity, the detection and the assessment that come etching in the article on plasma body technology and degumming process to carry out plasma damage.
[background technology]
In at present advanced IC manufacture process, plasma process is applied to surpassing in the committed steps in 20 steps, such as the etching of polysilicon, gate oxidation films, metal wire, and the deposit of dielectric layer, the prerinse sputter before the PVD, the removing photoresist etc. of photoresist.In plasma process, the device on silica-based can be directly exposed under the plasma ambient usually.Plasma is by discharge output ion and electronics.Biased lower outside, ion moves to silicon chip, promotes the generation of surface chemical reaction when liner is carried out sputter.But because the existence of plasma sheath, the unequal many factors of plasma, meeting is to reach surperficial electronics and ion populations unequal.Meeting is so that exist charging current in silicon chip substrate and surface like this, thereby can be to the grid oxic horizon injury of sensitivity.
Along with IC manufacturing technology node arrives 32nm when following, in front road technique, the photoresist surface after energetic ion is moved in can form on the surface shell of one deck carbonization, and this layer shell is difficult to remove especially.Mostly adopt for the attainment of one's purpose the energetic ion that has in the plasma to bombard the photoresist shell, will have charging current, injury in the responsive grid oxic horizon like this.
In addition, the charging damage problem that also has this process of removing photoresist in the conventional dry method degumming process.In the process of removing photoresist, removal along with photoresist, the aluminium on surface or the change of polysilicon electrode material have been exposed in the plasma atmosphere, collected from the charged particle in the plasma, but because aluminium or polysilicon can be regarded suspension electrode as, can produce the sheath layer on its surface, thereby so that the electronics of collecting, number of ions are different, form charging current, to responsive grid material injury.
[summary of the invention]
A kind of mos capacitance with the metal antenna structure that is applied to measure plasma damage comprises electrode antenna, insulating material, through hole, polysilicon, grid and silicon substrate.The characteristic of this structure is that the antenna of a slotting finger-like and square shape all links to each other with the polysilicon electrode of mos capacitance by through hole, can be used for collecting electronics and the ion of bombardment to the antenna.
Described mos capacitance, antenna material adopt polysilicon or aluminum metal to make, and antenna material is Al or polysilicon.
Described mos capacitance is inserted in the antenna that refers to structure, and two distances of inserting between referring to are 2-10um.
Described mos capacitance, the metal electrode that uses in the measuring process directly link together with antenna structure, and distance is equal between the metal electrode.
Described mos capacitance, intermediate oxide layer select made of silicon dioxide to form, and thickness is 3-10nm.
Described mos capacitance, the antenna structure surface of electric capacity can be used for testing remove photoresist damage and etching injury with photoresist or smooth.
Described mos capacitance, testing capacitor directly is made in silicon chip substrate, and silicon chip substrate plays the effect of an electrode in measurement.
Described mos capacitance contains the slotting finger of multiple antenna ratio of a lot of making and the antenna structure of square in a unit, the most frequently used antenna ratio is 1,10,100,1000,10000.
The present invention is based on the conventional fabrication processes of mos capacitance, be made, antenna structure can be used for collecting electronics, ion, assesses the plasma process damage by the electrology characteristic of measuring electric capacity.Has simple in structure, the easy advantage of making.
Main application of the present invention is: be used for detection and the assessment of plasma process damage.
[description of drawings]
Fig. 1 front section view of the present invention
Fig. 2 domain vertical view of the present invention
Fig. 3 cellular construction domain of the present invention vertical view
See also Fig. 1, antenna 101 is to adopt aluminium or polysilicon to be made.Substrate 106 is silicon substrate, and the responsive grid 105 on it adopts SiO
2Perhaps other grid materials are made.Be coated with the protective layer polysilicon 104 of conduction on the grid material, polysilicon layer is realized by through hole 103 with the conducting of antenna.The 102nd, insulating barrier is with polysilicon layer and antenna, substrate and polysilicon layer isolation.In testing process, by the electric current of antenna reception, be applied on the gate electrode polysilicon layer by through hole and accumulate, the electric field that produces with substrate is applied on the responsive grid, if the excessive electrology characteristic of responsive grid that will cause of electric field changes, causes the damage of grid.Can determine the process-induced damage situation by the current-voltage characteristic, the breakdown characteristics that detect grid.
Fig. 2 is the domain of overlooking of antenna capacitance structure, and 201 is the contact point in the measuring process.Fig. 3 is a vertical view in the unit, comprises the structure of ten kinds of different antennae ratios, and inserting the finger-like antenna structure is 301-305, and antenna ratio is respectively 2,10,100,1000,10000; Square shape antenna structure is 306-310, and antenna ratio is respectively 2,10,100,1000,10000.
Claims (8)
1. the mos capacitance with the metal antenna structure that is applied to measure plasma damage comprises electrode antenna, insulating material, through hole, polysilicon, grid and silicon substrate.The characteristic of this structure is that the antenna of a slotting finger-like and square shape all links to each other with the polysilicon electrode of mos capacitance by through hole, can be used for collecting electronics and the ion of bombardment to the antenna.
2. mos capacitance as claimed in claim 1, antenna material adopt polysilicon or aluminum metal to make, and antenna material is Al or polysilicon.
3. mos capacitance as claimed in claim 1 is inserted in the antenna that refers to structure, and two distances of inserting between referring to are 2-10um.
4. mos capacitance as claimed in claim 1, the metal electrode that uses in the measuring process directly links together with antenna structure, and distance is equal between the metal electrode.
5. mos capacitance as claimed in claim 1, intermediate oxide layer selects made of silicon dioxide to form, and thickness is 3-10nm.
6. mos capacitance as claimed in claim 1, the antenna structure surface of electric capacity be with photoresist or smooth, can be used for test remove photoresist damage and etching injury.
7. mos capacitance as claimed in claim 1, testing capacitor directly is made in silicon chip substrate, and silicon chip substrate plays the effect of an electrode in measurement.
8. mos capacitance as claimed in claim 1 contains the slotting finger of multiple antenna ratio of a lot of making and the antenna structure of square in a unit, the most frequently used antenna ratio is 1,10,100,1000,10000.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102002188A CN102891134A (en) | 2011-07-18 | 2011-07-18 | Plasma damage test structure based on metal oxide semiconductor (MOS) capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102002188A CN102891134A (en) | 2011-07-18 | 2011-07-18 | Plasma damage test structure based on metal oxide semiconductor (MOS) capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102891134A true CN102891134A (en) | 2013-01-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011102002188A Pending CN102891134A (en) | 2011-07-18 | 2011-07-18 | Plasma damage test structure based on metal oxide semiconductor (MOS) capacitor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104183574A (en) * | 2013-05-22 | 2014-12-03 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor testing structure and a semiconductor testing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5959311A (en) * | 1998-07-08 | 1999-09-28 | United Microelectronics Corp. | Structure of an antenna effect monitor |
| US6353235B1 (en) * | 1998-11-09 | 2002-03-05 | Mitsubishi Denki Kabushiki Kaisha | Plasma damage detector and plasma damage evaluation method |
| CN101558472A (en) * | 2006-11-08 | 2009-10-14 | 日新电机株式会社 | Method and device for forming silicon dot and silicon dot and method and device for forming substrate with insulating film |
| CN202352662U (en) * | 2011-07-18 | 2012-07-25 | 中国科学院微电子研究所 | Plasma damage test structure based on MOS (Metal Oxide Semiconductor) capacitance |
-
2011
- 2011-07-18 CN CN2011102002188A patent/CN102891134A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5959311A (en) * | 1998-07-08 | 1999-09-28 | United Microelectronics Corp. | Structure of an antenna effect monitor |
| US6353235B1 (en) * | 1998-11-09 | 2002-03-05 | Mitsubishi Denki Kabushiki Kaisha | Plasma damage detector and plasma damage evaluation method |
| CN101558472A (en) * | 2006-11-08 | 2009-10-14 | 日新电机株式会社 | Method and device for forming silicon dot and silicon dot and method and device for forming substrate with insulating film |
| CN202352662U (en) * | 2011-07-18 | 2012-07-25 | 中国科学院微电子研究所 | Plasma damage test structure based on MOS (Metal Oxide Semiconductor) capacitance |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104183574A (en) * | 2013-05-22 | 2014-12-03 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor testing structure and a semiconductor testing method |
| CN104183574B (en) * | 2013-05-22 | 2017-02-08 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor testing structure and a semiconductor testing method |
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Application publication date: 20130123 |
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