CN102881667A - 半导体封装构造 - Google Patents

半导体封装构造 Download PDF

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CN102881667A
CN102881667A CN2012103768771A CN201210376877A CN102881667A CN 102881667 A CN102881667 A CN 102881667A CN 2012103768771 A CN2012103768771 A CN 2012103768771A CN 201210376877 A CN201210376877 A CN 201210376877A CN 102881667 A CN102881667 A CN 102881667A
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chip
packaging structure
semiconductor packaging
graphene layer
substrate
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洪志斌
翁肇甫
谢慧英
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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Abstract

本发明公开一种半导体封装构造，包含一基板、至少一芯片、一封装胶体，及一石墨烯层，将所述石墨烯层设置在所述封装胶体上或设置在所述芯片的一表面上，通过所述石墨烯层具有高的平面性导热系数，有利于侧向导热，不仅增加热的均匀传导，也增进了热交换的面积，进而提高芯片的热导出效能。

Description

半导体封装构造
技术领域
本发明是有关于一种半导体封装构造，特别是有关于一种增加热的均匀传导的半导体封装构造。
背景技术
现今，随着如携带式个人电脑、智慧手机及数码相机等电子装置，微小化、多功能化及高性能化，半导体装置必须设计的更小且功能更多，因而使半导体封装构造(semiconductor package)在许多电子装置的使用上越来越普遍。不过，芯片在运作时容易产生高温，因此其表面需要另外接合一散热片(heat sink)以提高整体散热效率。常见固定散热片于芯片的方法是使用导热胶，然而其接合时导热胶厚度均一性控制不易，及内含的金属导热颗粒的导热性也较纯金属材质差。
为符合高散热需求的半导体封装，近年来开始使用金属导热材料，例如铟(Indium)片，因为铟具有良好的热物性(thermophysical property)，以及绝佳的导热性及延展性，可大幅提升导热效果，因此在具有高阶半导体芯片或堆栈式的半导体芯片的半导体封装构造上，已普遍开始使用铟作为热接合材料。
然而，铟片的成本过高，再者，铟片的平面(X-Y方向)传导与垂直(Z方向)传导的导热系数差异不大，对于提供芯片在整体面积的散热过程中，接近芯片热源的铟片中央表面其热交换会大于远离芯片热源的铟片周边表面，因而产生散热不均匀的现象，进而影响导热及散热的效率。
故，有必要提供一种半导体封装构造，以解决现有技术所存在的问题。
发明内容
有鉴于此，本发明提供一种半导体封装构造，以解决现有半导体封装构造使用铟片散热而有散热不均匀及成本过高的问题。
本发明的主要目的在于提供一种半导体封装构造，所述半导体封装构造包含有一设置在封装胶体或所述芯片的表面上的石墨烯层，所述石墨烯层具有高的平面性导热系数，有利于均匀导热，不仅增加热的均匀传导，也增进了热交换的面积，进而提高芯片的热导出效能。
为达成本发明的前述目的，本发明一实施例提供一种半导体封装构造，其中所述半导体封装构造包含一基板、至少一芯片、一封装胶体，及一石墨烯层，所述基板包含一上表面，所述芯片位于所述基板的上表面并与所述基板电性连接，所述封装胶体至少部分包覆所述芯片，所述石墨烯层设置在所述封装胶体上。
本发明的另一目的在于提供一种半导体封装构造，其中所述半导体封装构造包含有一设置在所述芯片的部分表面上的石墨烯层，通过高导热系数的石墨烯层，使其与所述芯片平面性热传导效率能提高，且成本相对于使用铟(Indium)作为热界面材料能更为降低。
为达成本发明的前述目的，本发明一实施例提供一种半导体封装构造，其中所述半导体封装构造包含一基板、至少一芯片、一封装胶体，及一石墨烯层，所述基板包含一上表面，所述芯片位于所述基板的上表面并与所述基板电性连接，所述石墨烯层设置在所述芯片的部分表面上。
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
附图说明
图1是本发明一实施例半导体封装构造的示意图。
图2是本发明又一实施例半导体封装构造的示意图。
图3是本发明另一实施例半导体封装构造的示意图。
图4是本发明再一实施例半导体封装构造的示意图。
具体实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如「上」、「下」、「顶」、「底」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」、「周围」、「中央」、「水平」、「横向」、「垂直」、「纵向」、「轴向」、「径向」、「最上层」或「最下层」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请参照图1所示，其揭示本发明第一实施例的半导体封装构造，在下文中，所述半导体封装构造即直接称为一封装体1。在本实施例中，所述封装体1包含：一基板11、一芯片12、一封装胶体13及一石墨烯层14。本发明将于下文逐一详细说明本实施例上述各元件的细部构造、组装关系及其运作原理。
在本实施例中，所述基板11主要包含由数个铜箔层及绝缘树脂层交替堆迭而成的一硬式(rigid)或可挠式(flexible)的印刷电路板(printedcircuit board，PCB)，但本发明不局限于此。所述基板11还包含一上表面111，所述芯片12位于所述基板11的上表面111。所述芯片12具有一有源表面121，所述有源表面121设有数个凸块(未标示)，利用倒装晶片技术(flipchip)将所述凸块与所述基板11的数个焊垫(未绘示)电性连接，所述芯片12另具有一相对于有源表面121的背面122，所述封装胶体13设置在所述基板11的上表面111，用以包覆在所述芯片12的***并覆盖在所述芯片12的背面122。
所述封装体1还可包含一底部填充胶(underfill)15，用以填充在所述基板11与所述芯片12之间的一间隙16中，用以使所述基板11与所述芯片12的凸块焊接接点不受外力影响而损害，而所述石墨烯层14则设置在所述封装胶体13上。
要说明的是，所述石墨烯层14中的石墨烯(Graphene)是一种由碳原子以sp2杂化轨道组成六角型呈蜂巢晶格的平面薄膜，只有一个碳原子厚度的二维材料，其是现今世上最薄却也是最坚硬的奈米材料。值得注意的是，石墨烯的二维xy平面方向的导热系数高达5300W/mK，但其垂直于平面的y方向的导热系数则仅为15W/mK。
在本实施例中，本发明的石墨烯层14采用高热传导石墨膜(PyrolyticGraphite Sheet，PGS)，其厚度可介于17微米至100微米之间，其平面传导的导热系数将介于1750W/mK至700W/Mk之间，其中所述石墨烯层14的厚度较适合设计成介于17微米至25微米之间，其平面传导的导热系数将介于1750W/mK至1600W/mK，以上所述平面传导的导热系数的数据皆远高于铟片平面传导的导热系数，因此，相较于铟片具有更高的平面导热特性。
根据本实施例，由于石墨烯的热传导具有异向性，其z方向的热传导为15W/mK，其X-Y平面的热传导高达5300W/mK，因此，将所述石墨烯层14设置在所述封装胶体13上时，可迅速的将所述芯片12所产生的热量经过上方的封装胶体13再沿所述石墨烯层14的水平方向，以辐射状朝向各侧边导出而散出热量至外部大气，换句话说，本实施例通过具有异向导热特性的所述石墨烯层14，将芯片12上方所产生的热传导到表面的各个位置，不仅增加热的均匀传导，也增进了热交换的面积，进而提高所述芯片12的热导出效能。
请参照图2所示，本发明又一实施例的半导体封装构造相似于本发明前述实施例，并大致沿用相同元件名称及图号，但本实施例的差异特征在于：本实施例的半导体封装构造主要应用于做为一封装体(PoP)的一下封装体，并用以结合一上封装体(未绘示)，在下文中，所述半导体封装构造仍称为一封装体1，其包含一基板11、一芯片12、一封装胶体13、一石墨烯层14及数个转接元件17。所述芯片12具有一有源表面121及一相对于有源表面121的背面122，利用倒装芯片技术(flip chip)将所述芯片12设置于所述基板11的一上表面111上，使所述有源表面121上的数个凸块(未标示)与所述基板11电性连接。
所述转接元件17形成于所述基板11上并环绕在所述芯片12***。所述转接元件17例如为锡球或其他金属球或金属柱。
所述封装胶体13位于所述基板11的所述上表面111上，所述芯片12的所述背面122例如可以选择裸露在所述封装胶体13外，因而所述石墨烯层14可同时覆盖在所述芯片12的背面122与所述封装胶体13上。另外，所述封装胶体13及所述石墨烯层14还包括数个分别对应于所述转接元件17的开口131，所述开口131贯穿所述石墨烯层14，并裸露部分转接元件17，用以与所述上封装体电性连接。
根据本实施例，所述封装体1同样可通过覆盖在所述芯片12的背面122的所述石墨烯层14，迅速将所述芯片12所产生的热量，以辐射状朝向各侧边导出而散出热量至外部大气，以增加热的均匀传导，提高所述芯片12的热导出效能。若所述背面122未裸露在所述封装胶体13外，则可通过覆盖在所述芯片12的背面122及所述封装体1上的所述石墨烯层14，迅速将所述芯片12所产生的热量，以辐射状朝向各侧边导出而散出热量至外部大气。
请参照图3所示，本发明另一实施例的半导体封装构造相似于本发明前述实施例，并大致沿用相同元件名称及图号，但本实施例的差异特征在于：所述封装体1包含一基板11、一间隔件(interposer)10、至少一个芯片124、125，及一石墨烯层14，其中所述基板11包含一上表面111，所述间隔件10可以是硅间隔件或有机间隔件，所述间隔件10的上、下表面均有焊垫，其内部具有连接上、下表面之焊垫的导通孔(未绘示)，所述间隔件10下表面的焊垫与所述基板11电性连接。所述芯片124、125皆属于倒装芯片(flip chip)，且分别具有一有源表面121，及对应侧的一背面122，其中所述芯片124、125的有源表面121分别电性连接在所述间隔件10上表面的焊垫上，所述石墨烯层14设置在所述芯片124及/或芯片125的背面122上。
所述封装体1还包含一环状支撑件18及一散热片19，两者皆由铜或铝等金属材料制成。所述环状支撑件18设置在所述基板11的上表面111且环绕在所述芯片124、125***，所述散热片19设置在所述环状支撑件18上，所述石墨烯层14通过一粘着层191贴附在所述散热片19的下表面，且所述石墨烯层14接触所述环状支撑件18与所述芯片124、125的背面122，另外，必要时，所述石墨烯层14与所述芯片124的背面122之间还可涂附少量的热界面材料，以增加热导出的效能。
根据本实施例，所述封装体1同样可通过所述芯片124及/或芯片125上方的所述石墨烯层14，迅速将所述芯片124、125所产生的热量，以辐射状朝向各侧边导出，再通过散热片19及环状支撑件18散出热量至外部大气，不仅增进了热交换的面积，更可利用所述散热片19及环状支撑件18增进散热的效果。
请参照图4所示，本发明再一实施例的半导体封装构造相似于本发明第一实施例，并大致沿用相同元件名称及图号，但第二实施例的差异特征在于：所述封装体1包含一基板11、二个芯片124、125及一石墨烯层14，所述基板11包含一上表面111，所述芯片124、125皆属于倒装芯片(flip chip)且分别具有一有源表面121，及对应侧的一背面122，其中一个芯片124的有源表面121与所述基板11电性连接，另一个芯片125的有源表面121则电性连接在所述芯片124的背面122上，且位于上方的所述芯片125的长宽尺寸大于位于下方的所述芯片124的长宽尺寸，而所述石墨烯层14则设置在所述芯片125的有源表面121上并环绕在所述芯片124的有源表面121的两侧。
根据本实施例，所述封装体1同样可通过所述芯片125下方的所述石墨烯层14，迅速将所述芯片125(及所述芯片124)所产生的热量，以辐射状朝向各侧边导出而散出热量至外部大气，增进了热交换的面积，以提高散热效果。再者，本实施例将所述石墨烯层14设置在所述芯片125朝下的有源表面121上，相对可保留所述芯片125朝上的背面122以供进行油墨或激光标示(marking)用途；或再进一步结合一散热鳍片(未绘示)。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。

Claims (10)

1.一种半导体封装构造，其特征在于：所述半导体封装构造包含：
一基板，包含一上表面；
至少一芯片，位于所述基板的上表面并与所述基板电性连接；
一封装胶体，至少部分包覆所述芯片；及
一石墨烯层，设置在所述封装胶体上。
2.如权利要求1所述的半导体封装构造，其特征在于：所述芯片具有一朝上的背面，所述封装胶体覆盖在所述芯片的背面。
3.如权利要求1所述的半导体封装构造，其特征在于：所述芯片具有一朝上的背面，所述背面是裸露在所述封装胶体外，所述石墨烯层至少部分覆盖在所述芯片的背面。
4.如权利要求1至3任一所述的半导体封装构造，其特征在于：所述半导体封装构造包含数个环绕在所述芯片***的转接元件，所述封装胶体还包括数个分别裸露所述转接元件的开口。
5.如权利要求1所述的半导体封装构造，其特征在于：所述石墨烯层的厚度介于17微米至100微米之间。
6.如权利要求1所述的半导体封装构造，其特征在于：所述石墨烯层为高热传导石墨膜。
7.一种半导体封装构造，其特征在于：所述半导体封装构造包含：
一基板，包含一上表面；
至少一芯片，位于所述基板的上表面并与所述基板电性连接；以及
一石墨烯层，设置在所述芯片的部分表面上。
8.如权利要求7所述的半导体封装构造，其特征在于：所述半导体封装构造包含数个芯片，每一所述芯片具有一有源表面，及对应侧的一背面，所述石墨烯层设置在所述芯片的有源表面或背面上。
9.如权利要求7所述半导体封装构造，其特征在于：所述半导体封装构造还包含一环状支撑件，及一散热片，所述环状支撑件设置在所述基板的上表面且环绕在所述芯片***，所述散热片设置在所述环状支撑件上，所述石墨烯层设置在所述散热片的下表面，且所述石墨烯层接触所述环状支撑件与所述芯片的一朝上的背面。
10.如权利要求7所述的半导体封装构造，其特征在于：所述石墨烯层的厚度介于17微米至100微米之间。
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