CN102881383A - Method for manufacturing transparent conductive film - Google Patents
Method for manufacturing transparent conductive film Download PDFInfo
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- CN102881383A CN102881383A CN2012103473559A CN201210347355A CN102881383A CN 102881383 A CN102881383 A CN 102881383A CN 2012103473559 A CN2012103473559 A CN 2012103473559A CN 201210347355 A CN201210347355 A CN 201210347355A CN 102881383 A CN102881383 A CN 102881383A
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- optical conductor
- substrate
- conductor drum
- nano silver
- transparent conductive
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Abstract
The invention discloses a method for manufacturing a transparent conductive film. A charging electrode is arranged above a photoconductor drum; a screen printing plate is placed below the photoconductor drum; and a light source is arranged below the screen printing plate. The method comprises the following steps: charging uniform electric charges on the surface of the photoconductor drum by using the charging electrode under the closed lightproof dark environment; exposing the surface of the photoconductor drum by using the light source through the screen printing plate; bringing nano silver powdered particles opposite to the electric charges on the surface of the photoconductor drum to be near the photoconductor drum by using a developing device, wherein the nano silver powdered particles are adsorbed to the surface of the photoconductor drum; conveying a substrate below the photoconductor drum and adding 0.3-coulomb electric charges below the substrate, so that the nano silver powdered particles on the surface of the photoconductor drum are adsorbed to the substrate; and performing heat treatment and curing on the substrate with the surface adsorbed with the nano silver powdered particles to form a film line. The method is low in cost and high in yield; the manufactured transparent conductive film has low impedance; and the line width and the line distance can be below 0.01 mm.
Description
Technical field
The present invention relates to a kind of touch-screen Sensor(transducer), particularly a kind of manufacture method of electrically conducting transparent line film.
Background technology
Touch at present Sensor and be manufactured with two kinds of techniques, the first is that gold-tinted processing procedure, technical process are: Vacuum Deposition ITO(Zinc oxide/indium oxide tin) film, clean coating photoresists, baking, waterfall light, development, etching, demoulding.The second is the laser dry etching technology, and main flow process is: be Vacuum Deposition ITO film, clean, laser-induced thermal etching, silver medal printing, baking, protective mulch.The first Product Process is ripe, properties of product stable, but technological process is complicated, and cost is higher and limited by ITO material self character, and surface resistance is difficult to accomplish below 30 ohm, and live width line-spacing minimum can only be accomplished 0.03mm.The second technique is relatively simple, but the yields of product is lower, the functional lability of product, and the live width of silver medal circuit and line-spacing can only be accomplished more than the 0.07mm.
Summary of the invention
Technical problem to be solved by this invention is: the manufacturing technology that a kind of novel transparent conductive film is provided, namely by printing the technology of nano silver material, realize that the mode of printing transparent circuit on glass or film material makes capacitance plate Sensor, thereby solve the higher and unsettled problem of dry ecthing procedure technique of traditional gold-tinted processing procedure cost.
For above-mentioned purpose, the present invention takes following technical scheme, a kind of transparent conductive film manufacture method, and the top of optical conductor drum is provided with charging electrode, and the below is placed with half tone, and the below of half tone is provided with light source, it is characterized in that, and its step is as follows:
1) charging electrode is filled uniform electric charge with to optical conductor drum surface under the dark surrounds of sealing shading;
2) light source exposes to optical conductor drum surface by half tone;
3) developing apparatus will take near the optical conductor drum with the Nano Silver powdery particle opposite with optical conductor drum surface charge, and Nano Silver powdery particle is adsorbed in optical conductor drum surface;
4) substrate is sent to optical conductor drum below, and the substrate below adds 0.3 Coulombian charge, and the Nano Silver powdery particle on optical conductor drum surface is adsorbed onto on the substrate;
5) adsorption there is the substrate of Nano Silver powdery particle heat-treat curing, and forms wiring thin film.
Described developing apparatus is cylindric.
Described heat treated temperature is 70 ℃ ± 5 ℃, and the time is 5s.
Be printed on the line pattern of required product on the described half tone according to the ratio of 1:1.
Described substrate is glass or film material.
The invention has the advantages that, cost is low, yield is high, and the transparent conductive film impedance of making is low, the live width line-spacing can be accomplished below the 0.01mm.
Description of drawings
Fig. 1 is optical conductor drum surface charging schematic diagram of the present invention.
Fig. 2 is optical conductor drum face exposure schematic diagram of the present invention.
Fig. 3 is optical conductor drum surface development schematic diagram of the present invention.
Fig. 4 is printing schematic diagram of the present invention.
Among the figure: 1, charging electrode, 2, optical conductor drum, 3, half tone, 4, light source, 5, developing apparatus, 6, substrate.7, printing electrified body, 8, Nano Silver powdery particle.
Embodiment
The invention will be further described below in conjunction with embodiment, referring to Fig. 1 to Fig. 4, and a kind of transparent conductive film manufacture method, the top of optical conductor drum 2 is provided with charging electrode 1, and the below is placed with half tone 3, and the below of half tone 3 is provided with light source 4, it is characterized in that, its step is as follows:
1) charging electrode 1 is filled uniform electric charge with to optical conductor drum 2 surfaces under the dark surrounds of sealing shading;
2) light source 4 exposes by 3 pairs of optical conductor drum 2 surfaces of half tone;
3) developing apparatus 5 will take to the Nano Silver powdery particle 8 opposite with optical conductor drum 2 surface charges near the optical conductor drum, and Nano Silver powdery particle 8 is adsorbed in optical conductor drum surface;
4) substrate 6 is sent to optical conductor drum 2 belows, and substrate 6 belows add 0.3 Coulombian charge, and the Nano Silver powdery particle 8 on optical conductor drum 2 surfaces is adsorbed onto on the substrate 6;
5) adsorption there is the substrate of Nano Silver powdery particle 8 heat-treat curing, and forms wiring thin film.
Described developing apparatus 5 is cylindric.
Described heat treated temperature is 70 ℃ ± 5 ℃, and the time is 5s.
Be printed on the line pattern of required product on the described half tone 6 according to the ratio of 1:1.
Described substrate 6 is glass or film material.
Whole device of the present invention is in an airtight cavity, optical conductor drum 2 is can be around the cylinder-like structure of center rotating, charging electrode 1 is positioned at the top of optical conductor drum 2, charging electrode 1 must rotate by optical conductor drum 2 near optical conductor drum 2 during charging, uniform electric charge on surface band, light source is positioned at the below of optical conductor drum, the transparent half tone that is printed on circuit places between light source and the optical conductor drum, and during exposure, light source 4 is opened the surface of the graph exposure on the half tone 3 in optical conductor drum 2.Developing apparatus 5 is positioned at optical conductor drum 2 sides, and the above's absorption Nano Silver powdery particle is when light conductor drum 2 develops, developing apparatus 5 is near light conductor drum 2, approach with the nano-silver powder particle of electric charge with opposite polarity optical conductor drum 2, rely on electrostatic absorption principle, in 2 surface developments of optical conductor drum.The glass that is printed or film material substrate 6 be by to optical conductor drum 2 belows and since be subjected to the suction-operated Nano Silver powdery particle of substrate 6 belows printing electrified body 7 electric charges can adsorb with substrate 6 on.
It is cylinder-like structure that optical conductor drum of the present invention 2 adopts the optical conductor photosensitive drums, the drum outer wall photosensitive type semiconductor that evenly distributes, and namely (not being subjected to light) is insulator when dark attitude; And when bright attitude (being subjected to light), be conductor.Optical conductor is not subjected to charge under the state of illumination, makes on its surface band uniformly electric charge, then by optical imaging concept, original image is imaged on the optical conductor.Image section is arranged because not being subject to illumination (being equivalent to dark attitude), so the optical conductor surface is still with electric charge, the no image area territory then is subject to illumination (being equivalent to bright attitude), so the electric charge on optical conductor surface is by the ground connection of matrix, the electric charge on surface is disappeared, thereby formed electrostatic latent image.
Claims (5)
1. transparent conductive film manufacture method, the top of optical conductor drum is provided with charging electrode, and the below is placed with half tone, and the below of half tone is provided with light source, it is characterized in that, and its step is as follows:
1) charging electrode is filled uniform electric charge with to optical conductor drum surface under the dark surrounds of sealing shading;
2) light source exposes to optical conductor drum surface by half tone;
3) developing apparatus will take near the optical conductor drum with the Nano Silver powdery particle opposite with optical conductor drum surface charge, and Nano Silver powdery particle is adsorbed in optical conductor drum surface;
4) substrate is sent to optical conductor drum below, and the substrate below adds 0.3 Coulombian charge, and the Nano Silver powdery particle on optical conductor drum surface is adsorbed onto on the substrate;
5) adsorption there is the substrate of Nano Silver powdery particle heat-treat curing, and forms wiring thin film.
2. transparent conductive film manufacturing technology according to claim 1 is characterized in that, described developing apparatus is cylindric.
3. transparent conductive film manufacture method according to claim 1 is characterized in that, described heat treated temperature is 70 ℃ ± 5 ℃, and the time is 5s.
4. transparent conductive film manufacture method according to claim 1 is characterized in that, is printed on the line pattern of required product on the described half tone according to the ratio of 1:1.
5. transparent conductive film manufacture method according to claim 1 is characterized in that, described substrate is glass or film material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103473559A CN102881383A (en) | 2012-09-19 | 2012-09-19 | Method for manufacturing transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103473559A CN102881383A (en) | 2012-09-19 | 2012-09-19 | Method for manufacturing transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102881383A true CN102881383A (en) | 2013-01-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012103473559A Pending CN102881383A (en) | 2012-09-19 | 2012-09-19 | Method for manufacturing transparent conductive film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110808220A (en) * | 2019-11-08 | 2020-02-18 | 上海华力微电子有限公司 | Wafer back scanner, wafer back scanning method and wafer scanning method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040197112A1 (en) * | 2002-10-01 | 2004-10-07 | Canon Kabushiki Kaisha | Fixing apparatus and image forming apparatus |
| CN1638606A (en) * | 2003-12-26 | 2005-07-13 | 株式会社东芝 | Method for producing electronic circuit and electronic circuit substrate |
| CN101044803A (en) * | 2005-03-30 | 2007-09-26 | 株式会社日立制作所 | Conductive pattern forming apparatus |
| US20070231010A1 (en) * | 2006-03-29 | 2007-10-04 | Eiichi Ohta | Electron emission element, charging device, process cartridge, and image forming apparatus |
-
2012
- 2012-09-19 CN CN2012103473559A patent/CN102881383A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040197112A1 (en) * | 2002-10-01 | 2004-10-07 | Canon Kabushiki Kaisha | Fixing apparatus and image forming apparatus |
| CN1638606A (en) * | 2003-12-26 | 2005-07-13 | 株式会社东芝 | Method for producing electronic circuit and electronic circuit substrate |
| CN101044803A (en) * | 2005-03-30 | 2007-09-26 | 株式会社日立制作所 | Conductive pattern forming apparatus |
| US20070231010A1 (en) * | 2006-03-29 | 2007-10-04 | Eiichi Ohta | Electron emission element, charging device, process cartridge, and image forming apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110808220A (en) * | 2019-11-08 | 2020-02-18 | 上海华力微电子有限公司 | Wafer back scanner, wafer back scanning method and wafer scanning method |
| CN110808220B (en) * | 2019-11-08 | 2022-11-25 | 上海华力微电子有限公司 | Wafer back scanner, wafer back scanning method and wafer scanning method |
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| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 330096 Nanchang high tech Development Zone, Jingdong Road, No. 1699, No. Applicant after: Jiangxi Lianchuang Electronic Co., Ltd. Address before: 330096 Nanchang high tech Development Zone, Jingdong Road, No. 1699, No. Applicant before: Jiangxi Lianchuang Electronic Co., Ltd. |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130116 |