CN102868382B - 一种smd石英晶体谐振器镀膜电极 - Google Patents

一种smd石英晶体谐振器镀膜电极 Download PDF

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CN102868382B
CN102868382B CN201210355577.5A CN201210355577A CN102868382B CN 102868382 B CN102868382 B CN 102868382B CN 201210355577 A CN201210355577 A CN 201210355577A CN 102868382 B CN102868382 B CN 102868382B
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coated electrode
crystal resonator
smd
quartz
quartz crystal
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CN102868382A (zh
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刘青彦
梁羽杉
杨清明
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CHENGDU KINGBRI FREQUENCY TECHNOLOGY CO LTD
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Abstract

本发明公开一种SMD石英晶体谐振器镀膜电极，镀膜电极附着在晶片的表面，该镀膜电极包括矩形区和与其连接的弓形区；该镀膜电极对于SMD石英晶体谐振器的FDLD指标有明显的改善，提高产品的性能。

Description

一种SMD石英晶体谐振器镀膜电极
技术领域
本发明涉及电子元器件领域，尤其涉及一种SMD石英晶体谐振器电极。
背景技术
石英晶体谐振器是用压电石英（即水晶）制成的压电器件，它不仅具有高度稳定的物理化学性能，而且弹性振动损耗极小。与其它电子元器件相比，压电石英晶体还有着很高的频率稳定度和高Q值，使其成为稳定频率和选择频率的重要元器件。随着数字化电路的广泛应用，市场对晶体元器件的可靠性能提出更高的要求，石英晶体谐振器的FDLD指标，反映的是石英晶体谐振器工作频率随激励功率的不同，所产生的频率变化最大值和最小值的差异，是石英晶体的品质的关键指标之一。现有技术是采用矩形镀银电极，量产过程中从0.01uW至500uW进行30步扫描，对于FDLD<±2ppm的规格，其CPK<1.33,只能通过全数检查挑选来保证出货产品的品质，生产成本高。
发明内容
本发明旨在提供一种SMD石英晶体谐振器镀膜电极，用于提高SMD石英晶体谐振器的FDLD指标，改善SMD石英晶体谐振器的性能。
为达到上述目的，本发明是采用以下技术方案实现的：
本发明公开的SMD石英晶体谐振器镀膜电极，镀膜电极附着在晶片的表面；其特征在于：所述镀膜电极包括矩形区和与其连接的弓形区；该镀膜电极形状对于FDLD改善有明显的效果，对于从0.01uW至500uW进行30步扫描，FDLD<±-2ppm的规格要求，其CPK可达到1.67以上。
进一步的，所述镀膜电极包括由内到外依次排列的下镀铬层、镀银层、上镀铬层；下镀铬层可增强镀膜电极和晶片之间的附着力，上镀铬层可防止镀膜电极在石英晶体谐振器封装工序前被空气氧化。
优选的，所述弓形区的弓形角为80至100度。
优选的，所述弓形区的弦长等于矩形区的纵向宽度。
优选的，所述镀膜电极的横向尺寸为1.2mm，纵向尺寸为1.0mm。
优选的，所述下镀铬层的厚度为2至3nm。
优选的，所述上镀铬层的厚度为1至2nm。
本发明提供的SMD石英晶体谐振器镀膜电极，对于FDLD改善有着明显的效果，对于从0.01uW至500uW进行30步扫描，FDLD<±-2ppm的规格要求，其CPK可达到1.67以上，制程良率大幅提升，产品性能得到提高；在封装前制程中有效保护晶片表面电极不被氧化，封装后的频率变化和老化特性得到大幅提高，等效年老化率可由原±5ppm提高到±2.5ppm,对于频率的CPK可有原>1.33提升到>1.67。
附图说明
图1是本发明的结构示意图；
图2是本发明的剖视图；
图中1-晶片、2-镀膜电极、3-下镀铬层、4-镀银层、5-上镀铬层、6-矩形区、7-弓形区。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图，对本发明进行进一步详细说明。
如图1，本发明公开的SMD石英晶体谐振器镀膜电极，镀膜电极2附着在晶片1的表面；镀膜电极2包括矩形区6和与其连接的弓形区7。
如图2，进一步的，镀膜电极2包括由内到外依次排列的下镀铬层3、镀银层4、上镀铬层5。
优选的，弓形区7的弓形角为80至100度。
优选的，弓形区7的弦长等于矩形区6的纵向宽度。
优选的，镀膜电极2的横向尺寸为1.2mm，纵向尺寸为1.0mm。
优选的，下镀铬层3的厚度为2至3nm。
优选的，上镀铬层5的厚度为1至2nm。
当然，本发明还可有其它多种实施例，在不脱离本发明的精神及其实质的情况下，熟悉本领域的技术人员当可根据本发明做出各种相应的改变和变形，但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。

Claims (4)

1.一种SMD石英晶体谐振器镀膜电极，镀膜电极(2)附着在晶片(1)的表面；其特征在于：所述镀膜电极(2)包括矩形区(6)和与其连接的弓形区(7)；所述镀膜电极(2)包括由内到外依次排列的下镀铬层(3)、镀银层(4)、上镀铬层(5)；所述下镀铬层(3)的厚度为2至3nm；所述上镀铬层(5)的厚度为1至2nm。
2.根据权利要求1所述的SMD石英晶体谐振器镀膜电极，其特征在于：所述弓形区(7)的弓形角为80至100度。
3.根据权利要求1所述的SMD石英晶体谐振器镀膜电极，其特征在于：所述弓形区(7)的弦长等于矩形区(6)的纵向宽度。
4.根据权利要求1所述的SMD石英晶体谐振器镀膜电极，其特征在于：所述镀膜电极(2)的横向尺寸为1.2mm，纵向尺寸为1.0mm。
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CN201490982U (zh) * 2009-09-09 2010-05-26 安徽铜峰电子股份有限公司 SMD5032-12MHz型晶体谐振器用晶片
CN101814904A (zh) * 2010-04-24 2010-08-25 烟台大明电子有限公司 石英晶体谐振器及加工工艺
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WO2011108715A1 (ja) * 2010-03-04 2011-09-09 株式会社大真空 電子部品パッケージ用封止部材、電子部品パッケージ、及び電子部品パッケージ用封止部材の製造方法

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Publication number Priority date Publication date Assignee Title
CN201490982U (zh) * 2009-09-09 2010-05-26 安徽铜峰电子股份有限公司 SMD5032-12MHz型晶体谐振器用晶片
CN101814904A (zh) * 2010-04-24 2010-08-25 烟台大明电子有限公司 石英晶体谐振器及加工工艺
CN201821325U (zh) * 2010-09-29 2011-05-04 铜陵市峰华电子有限公司 一种复合镀膜的smd晶体谐振器晶片
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CN202872743U (zh) * 2012-09-21 2013-04-10 成都晶宝时频技术股份有限公司 一种smd石英晶体谐振器镀膜电极

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