CN102857216B - Resonant exclusive-OR gate oscillation integrated system - Google Patents
Resonant exclusive-OR gate oscillation integrated system Download PDFInfo
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- CN102857216B CN102857216B CN201210304846.5A CN201210304846A CN102857216B CN 102857216 B CN102857216 B CN 102857216B CN 201210304846 A CN201210304846 A CN 201210304846A CN 102857216 B CN102857216 B CN 102857216B
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- electric capacity
- xor gate
- integrated chip
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- effect transistor
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- 230000010355 oscillation Effects 0.000 title abstract description 10
- 230000005669 field effect Effects 0.000 claims description 21
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000001914 filtration Methods 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 3
- 230000006870 function Effects 0.000 abstract description 14
- 230000009993 protective function Effects 0.000 abstract 2
- 230000017105 transposition Effects 0.000 abstract 2
- 230000007812 deficiency Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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Abstract
The invention discloses a resonant exclusive-OR gate oscillation integrated system which is characterized in that the resonant exclusive-OR gate oscillation integrated system mainly consists of an exclusive-OR gate integrated chip U1 and an exclusive-OR gate integrated chip U2, a resistor R connected with the input ends of the U1 and the U2, a resonance protection circuit connected with the output ends of the U1 and the U2, an oscillation circuit connected with the U1 in parallel, and a transposition protective circuit connected with the U2 in parallel. The resonant exclusive-OR gate oscillation integrated system provided by the invention can thoroughly overcome the deficiency that conventional exclusive-OR gate circuit is free from resonance protective function, oscillation function and transposition protective function.
Description
Technical field
The present invention relates to a kind of circuit integrated system, specifically refer to a kind of mode of resonance XOR gate vibration integrated system.
Background technology
Electronic equipment is the life instrument that people commonly use at present, and all has NOR gate circuit in most electronic equipment, with by identifying that high, end level controls electronic equipment.But current NOR gate circuit is on the market simple XOR circuit; it does not have resonance protection function, oscillation functions and reversal connection protection function; therefore when pulse appears in the voltage inputted; not only can have influence on the normal use of NOR gate circuit greatly; reduce the useful life of NOR gate circuit; even also can puncture this NOR gate circuit, cause potential safety hazard to user.
Summary of the invention
The object of the invention is to overcome the defect that current NOR gate circuit does not have resonance protection function, oscillation functions and reversal connection protection function; there is provided a kind of structure simple, there is a kind of mode of resonance XOR gate vibration integrated system of resonance protection function, oscillation functions and reversal connection protection function.
The present invention is achieved through the following technical solutions: mode of resonance XOR gate vibration integrated system; it is primarily of XOR gate integrated chip U1 and XOR gate integrated chip U2; the resistance R be all connected with the input of XOR gate integrated chip U2 with XOR gate integrated chip U1; the resonant protection circuit be connected with the output of XOR gate integrated chip U2 with XOR gate integrated chip U1; the oscillating circuit be in parallel with XOR gate integrated chip U1, and form with the reverse-connection protection circuit that XOR gate integrated chip U2 is in parallel.
Described resonant protection circuit is by field-effect transistor Q2, the electric capacity C1 that one end is connected with the grid of field-effect transistor Q2, the other end is connected with the drain electrode of field-effect transistor Q2 successively after electric capacity C2, electric capacity C4, be serially connected in the electric capacity C3 between the tie point of electric capacity C1 and electric capacity C2 and the drain electrode of field-effect transistor Q2, and form with the inductance L 2 that electric capacity C4 is in parallel; The output of described XOR gate integrated chip U1 is connected with the tie point of electric capacity C2 with electric capacity C1, and the output of XOR gate integrated chip U2 is then connected with the tie point of electric capacity C4 with electric capacity C2.
Described oscillating circuit by field-effect transistor Q1, the coupling filter circuit that one end is connected with the grid of field-effect transistor Q1, the other end is connected with the input of XOR gate integrated chip U1, and forming with the diode D that field-effect transistor Q is in parallel.
The fuse F that described reverse-connection protection circuit is connected with the input of XOR gate integrated chip U2 by one end, the other end is connected with the output of XOR gate integrated chip U2 after diode D3, relay K; and form with the diode D4 that relay K is in parallel, the normally opened contact of relay K is then connected in series with resistance R phase.
Novel in order to realize this use preferably, the resistance of described resistance R is 4.7 K Ω, and described coupling filter circuit is made up of inductance L 1 parallel with one another and low frequency filtering electric capacity CT.
Described electric capacity C1, electric capacity C2, electric capacity C3 and electric capacity C4 are high pressure patch capacitor.
The present invention compared with prior art, has the following advantages and beneficial effect:
(1) the present invention thoroughly can solve the defect that traditional NOR gate circuit does not have resonance protection function, oscillation functions and reversal connection protection function.
(2) the present invention has good filtering voltage regulation function, therefore effectively can filter first harmonic and the second harmonic of AC power, extends the useful life of electronic equipment.
(3) performance of the present invention is highly stable, is convenient to make and use, and farthest can stop the potential safety hazard of user.
Accompanying drawing explanation
Fig. 1 is electrical block diagram of the present invention.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1; integrated system of the present invention comprises XOR gate integrated chip U1 and XOR gate integrated chip U2; the resistance R be all connected with the input of XOR gate integrated chip U2 with XOR gate integrated chip U1; the resonant protection circuit be connected with the output of XOR gate integrated chip U2 with XOR gate integrated chip U1; the oscillating circuit be in parallel with XOR gate integrated chip U1, and the reverse-connection protection circuit be in parallel with XOR gate integrated chip U2.
As shown in the figure, this resonant protection circuit is by field-effect transistor Q2, the electric capacity C1 that one end is connected with the grid of field-effect transistor Q2, the other end is connected with the drain electrode of field-effect transistor Q2 successively after electric capacity C2, electric capacity C4, be serially connected in the electric capacity C3 between the tie point of electric capacity C1 and electric capacity C2 and the drain electrode of field-effect transistor Q2, and form with the inductance L 2 that electric capacity C4 is in parallel; The output of described XOR gate integrated chip U1 is connected with the tie point of electric capacity C2 with electric capacity C1, and the output of XOR gate integrated chip U2 is then connected with the tie point of electric capacity C4 with electric capacity C2.
Described oscillating circuit is then by field-effect transistor Q1, the coupling filter circuit that one end is connected with the grid of field-effect transistor Q1, the other end is connected with the input of XOR gate integrated chip U1, and form with the diode D that field-effect transistor Q is in parallel.In order to ensure result of use, this coupling filter circuit is preferentially made up of inductance L 1 parallel with one another and low frequency filtering electric capacity CT.
The fuse F that described reverse-connection protection circuit is connected with the input of XOR gate integrated chip U2 by one end, the other end is connected with the output of XOR gate integrated chip U2 after diode D3, relay K; and form with the diode D4 that relay K is in parallel, the normally opened contact of relay K is then connected in series with resistance R phase.
In order to realize the present invention preferably, the resistance of described resistance R is preferably 4.7 K Ω, and electric capacity C1, electric capacity C2, electric capacity C3 and electric capacity C4 are high pressure patch capacitor.
As mentioned above, just the present invention can be realized preferably.
Claims (4)
1. mode of resonance XOR gate vibration integrated system, it is characterized in that, primarily of XOR gate integrated chip U1 and XOR gate integrated chip U2, the resistance R be all connected with the input of XOR gate integrated chip U2 with XOR gate integrated chip U1, the resonant protection circuit be connected with the output of XOR gate integrated chip U2 with XOR gate integrated chip U1, the oscillating circuit be in parallel with XOR gate integrated chip U1, and form with the reverse-connection protection circuit that XOR gate integrated chip U2 is in parallel; Described resonant protection circuit is by field-effect transistor Q2, the electric capacity C1 that one end is connected with the grid of field-effect transistor Q2, the other end is connected with the drain electrode of field-effect transistor Q2 successively after electric capacity C2, electric capacity C4, be serially connected in the electric capacity C3 between the tie point of electric capacity C1 and electric capacity C2 and the drain electrode of field-effect transistor Q2, and form with the inductance L 2 that electric capacity C4 is in parallel; The output of described XOR gate integrated chip U1 is connected with the tie point of electric capacity C2 with electric capacity C1, and the output of XOR gate integrated chip U2 is then connected with the tie point of electric capacity C4 with electric capacity C2; The fuse F that described reverse-connection protection circuit is connected with the input of XOR gate integrated chip U2 by one end, the other end is connected with the output of XOR gate integrated chip U2 after diode D3, relay K, and form with the diode D4 that relay K is in parallel, the normally opened contact of relay K is then connected in series with resistance R phase; Described electric capacity C1, electric capacity C2, electric capacity C3 and electric capacity C4 are high pressure patch capacitor.
2. mode of resonance XOR gate vibration integrated system according to claim 1, it is characterized in that: described oscillating circuit is by field-effect transistor Q1, the coupling filter circuit that one end is connected with the grid of field-effect transistor Q1, the other end is connected with the input of XOR gate integrated chip U1, and form with the diode D that field-effect transistor Q is in parallel.
3. mode of resonance XOR gate vibration integrated system according to claim 2, is characterized in that: described coupling filter circuit is made up of inductance L 1 parallel with one another and low frequency filtering electric capacity CT.
4. mode of resonance XOR gate vibration integrated system according to claim 3, is characterized in that: the resistance of described resistance R is 4.7K Ω.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210304846.5A CN102857216B (en) | 2012-08-25 | 2012-08-25 | Resonant exclusive-OR gate oscillation integrated system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210304846.5A CN102857216B (en) | 2012-08-25 | 2012-08-25 | Resonant exclusive-OR gate oscillation integrated system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102857216A CN102857216A (en) | 2013-01-02 |
| CN102857216B true CN102857216B (en) | 2015-07-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210304846.5A Expired - Fee Related CN102857216B (en) | 2012-08-25 | 2012-08-25 | Resonant exclusive-OR gate oscillation integrated system |
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| Country | Link |
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| CN (1) | CN102857216B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5138586A (en) * | 1991-05-29 | 1992-08-11 | Eastman Kodak Company | Acoustic logic circuits |
| CN1790903A (en) * | 2005-12-27 | 2006-06-21 | 中国科学院武汉物理与数学研究所 | Frequency multiplication method and frequency multiplier |
| CN102611426A (en) * | 2012-03-23 | 2012-07-25 | 上海信耀电子有限公司 | Automatic digital-to-analog range switching circuit |
| CN202798663U (en) * | 2012-08-25 | 2013-03-13 | 成都方拓科技有限公司 | Resonance type exclusive-OR gate oscillation integrated system |
-
2012
- 2012-08-25 CN CN201210304846.5A patent/CN102857216B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5138586A (en) * | 1991-05-29 | 1992-08-11 | Eastman Kodak Company | Acoustic logic circuits |
| CN1790903A (en) * | 2005-12-27 | 2006-06-21 | 中国科学院武汉物理与数学研究所 | Frequency multiplication method and frequency multiplier |
| CN102611426A (en) * | 2012-03-23 | 2012-07-25 | 上海信耀电子有限公司 | Automatic digital-to-analog range switching circuit |
| CN202798663U (en) * | 2012-08-25 | 2013-03-13 | 成都方拓科技有限公司 | Resonance type exclusive-OR gate oscillation integrated system |
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| CN102857216A (en) | 2013-01-02 |
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