CN102856787A - Manufacturing method of GaN substrate laser diode - Google Patents
Manufacturing method of GaN substrate laser diode Download PDFInfo
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- CN102856787A CN102856787A CN2012103530180A CN201210353018A CN102856787A CN 102856787 A CN102856787 A CN 102856787A CN 2012103530180 A CN2012103530180 A CN 2012103530180A CN 201210353018 A CN201210353018 A CN 201210353018A CN 102856787 A CN102856787 A CN 102856787A
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Abstract
The invention discloses a manufacturing method of a GaN substrate laser diode. The manufacturing method comprises the following steps of: forming a GaN substrate, and sequentially depositing an n type coating layer, an n type light guide layer, an active layer, a p type barrier layer, a p type light guide layer and a p type coating layer, wherein the method for forming the GaN substrate comprises the steps of putting a GaN wafer into a high-temperature and high-pressure device, and pressurizing the GaN wafer when heating the GaN wafer, wherein the heating temperature is 820-880 DEG C, the pressurizing pressure is 4.1-4.6 GPa, and the pressurizing is kept for 10-15min; stopping heating and pressurizing to enable the GaN wafer to restore to constant temperature and constant pressure; and after annealing in the high-temperature and high-pressure device for 20-30min, taking out the GaN wafer. With the adoption of the method, the crystal defect density in the laser diode substrate can be obviously reduced, the performance of the laser diode is improved, and the service life of the laser diode is prolonged.
Description
Technical field
The present invention relates to a kind of manufacture method of laser diode.
Background technology
Laser diode (LD) is a kind ofly to form diode by semi-conducting material, and its basic structure comprises substrate and is deposited on successively P/N type coating layer, active layer and P/N type coating layer on the substrate, and the ohmic contact on N-type and the P type coating layer.Substrate has important effect as the ground of this mansion of LD.Sapphire is a kind of LD substrate commonly used, but because lattice and the thermal stress mismatch of the hetero epitaxial layer on itself and its because the degrees of expansion difference can be burst apart, cause device failure after heating.An other class LD substrate comprises GaN, GaAs, the semi-conducting materials such as InP.Generally all can comprise various defectives in the above-mentioned semi-conducting material as substrate, such as dislocation, gap or room etc., defective can cause the crystal strain, the strain meeting causes the quality of epitaxial loayer on the substrate and performance to reduce, and causes the lost of life of laser diode.For many years, along with the development of semiconductor technology, process those skilled in the art studying for a long period of time and putting into practice, and have formed comparatively perfect crystal growth technique flow process, have reduced the defect concentration that forms in the semiconductor substrate materials growth course.But people also wish to obtain the lower substrate of defect concentration, make the laser diode that performance is better, the life-span is longer.How further to reduce or eliminate defective and become this area urgent problem.
Summary of the invention
In order to overcome the defective that exists in the prior art, the invention provides a kind of manufacture method of GaN substrate laser diode, the method can significantly reduce the defect concentrations in crystals in the laser diode substrate, improves performance and the life-span of laser diode.
GaN substrate laser diode of the present invention comprises the n-GaN substrate, has deposited successively N-shaped coating layer, N-shaped photoconductive layer and active layer on substrate, wherein,
The N-shaped coating layer is n-Al
aIn
bGa
1-a-bN, 0≤a wherein, b, a+b≤1;
The N-shaped photoconductive layer is n-Al
cIn
dGa
1-c-dN, 0≤c wherein, d, c+d≤1;
Active layer is the n-Al of superlattice structure
eIn
fGa
1-e-fN/n-AI
gIn
hGa
1-g-hThe N multiple quantum well layer, 0≤e wherein, f, g, h, e+f, g+h≤1.
Also deposited successively p-type barrier layer, p-type photoconductive layer and p-type coating layer on active layer, wherein the p-type barrier layer is p-Al
iIn
jGa
1-i-jN, the p-type photoconductive layer is p-Al
kIn
1Ga
1-k-1N, the p-type coating layer is p-Al
mIn
nGa
1-m-nN, 0≤i wherein, j, k, l, m, n, i+j, k+1, m+n≤1.
The manufacture method of GaN substrate laser diode of the present invention comprises the steps, at first forms the GaN substrate, has secondly deposited successively N-shaped coating layer, N-shaped photoconductive layer, active layer, p-type barrier layer, p-type photoconductive layer and p-type coating layer on substrate.
The method that wherein forms the GaN substrate comprises the steps:
(1) at normal temperatures and pressures, the GaN wafer is put into high temperature high pressure device, add transmission medium in high temperature high pressure device, this transmission medium is NaCL and liquid nitrogen;
Pressurization when (2) the GaN wafer being heated, heating-up temperature is 820～880 ℃, moulding pressure is 4.1 ~ 4.6GPa, keeps 10～15 minutes.Wherein, the rate of heat addition is 100 ℃/minute, and compression rate is 0.2～0.3GPa/ minute.
(3) stopped heating makes the GaN wafer be cooled to normal temperature; Slowly release makes the GaN wafer return to normal pressure simultaneously.Release speed is 0.5～0.8GPa/ minute.
(4) in high temperature high pressure device, annealed 20～30 minutes after, take out the GaN wafer.
Description of drawings
Fig. 1 is the structural representation of GaN substrate laser diode of the present invention.
Embodiment
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Fig. 1 shows the structural representation of laser diode of the present invention.It comprises n-GaN substrate 1, has deposited successively N-shaped coating layer 2, N-shaped photoconductive layer 3 and active layer 4 on substrate 1.
N-shaped coating layer 2 is n-Al
aIn
bGa
1-a-bN, photoconductive layer 3 is n-Al
cIn
dGa
1-c-dN, 0≤a wherein, b, c, d, a+b, c+d≤1.
Coating layer 2 also can be n-Al
aIn
bGa
1-a-bThe N superlattice.
Also deposited p-type barrier layer 5 on active layer 4, p-type barrier layer 5 is
P-Al
iIn
jGa
1-i-jN is p-type photoconductive layer 6 and p-type coating layer 7 on it, and wherein p-type photoconductive layer 6 is p-Al
kIn
1Ga
1-k-1N, p-type coating layer 7 is p-Al
mIn
nGa
1-m-nN, 0≤i wherein, j, k, l, m, n, i+j, k+1, m+n≤1.
P type coating layer 7 also can be p-Al
mIn
nGa
1-m-nThe N superlattice.
In a preferred embodiment, all the band gap than active layer is large for the band gap on coating layer, photoconductive layer and p-type barrier layer.
In a further advantageous embodiment, the band gap of photoconductive layer is less than the band gap of coating layer, and the band gap on p-type barrier layer is larger than the band gap of coating layer.
On p-type coating layer 7 p-type contact layer 8 can be set, p-type contact layer 8 can be p-Al
oIn
pGa
1-o-pN, 0≤o wherein, p, o+p≤1, the band gap of p-type contact layer is larger than the band gap of active layer, and is less than the band gap of coating layer.
Contact layer can also be p
+-Al
yIn
zGa
1-y-zThe N superlattice, 0≤y wherein, z, y+z≤1.
Etch structures p contact layer, coating layer, active layer and optional n contact layer by this device form mesa structure.Table top is enough deeply extending at least under the active layer, and can extend to the topmost portion of substrate always.
In order to improve the electricity restriction and to reduce threshold current, can pass through peripheral etching one ridge structure of contact layer, and enter in the uppermost coating layer.After corrosion forms bar shaped table top and ridge structure, form passivation layer with the side of table top and ridge but not the top passivation of ridge.Passivation layer can comprise SiO
2Perhaps SiN
x, can deposit by methods such as thermal evaporation, electron beam evaporation, sputters.
Then, on top surface (p-type) and basal surface (N-shaped), form respectively p-type Metal Contact 9 and N-shaped Metal Contact 10.P-type contact 9 is preferably nickel-billon, and N-shaped contact 10 is preferably Ti-Al alloy.It can form by any method known in the art, for example sputtering sedimentation or electron-beam evaporation.The temperature that above-mentioned contact is annealed between about 400 ℃ to 950 ℃ namely consists of ohmic contact.
At last, at the in-plane cutter spare perpendicular to above-mentioned ridge structure, to determine the length dimension of laser cavity.The length of laser cavity at 100 μ m between the 2000 μ m.
The above has described the device architecture of N-shaped substrate, and the device architecture of p-type substrate is opposite with it, n-contact layer and p-contact layer and n-coating layer and p-coating layer is put upside down respectively get final product.
The method that wherein forms the GaN substrate comprises the steps:
(1) at normal temperatures and pressures, the GaN wafer is put into high temperature high pressure device, add transmission medium in high temperature high pressure device, this transmission medium is NaCL and liquid nitrogen;
Pressurization when (2) the GaN wafer being heated, heating-up temperature is 820～880 ℃, moulding pressure is 4.1 ~ 4.6GPa, keeps 10～15 minutes; Moulding pressure herein may also be referred to as pressurization pressure.Wherein, the rate of heat addition is 100 ℃/minute, and compression rate is 0.2～0.3GPa/ minute.
(3) stopped heating makes the GaN wafer be cooled to normal temperature; Slowly release makes the GaN wafer return to normal pressure simultaneously.Release speed is 0.5～0.8GPa/ minute.
(4) in high temperature high pressure device, annealed 20～30 minutes after, take out the GaN wafer.
The present invention has carried out the experiment of 50 groups of different temperatures and pressure limit, and the GaN wafer carried out high temperature high pressure process.Experimental data shows, it is 820～880 ℃ that the GaN wafer is implemented heating-up temperature, after moulding pressure was the high temperature high pressure process and annealing of 4.1 ~ 4.6GPa, 20～30% before the density in its dislocation and space is reduced to and processes illustrated that the method has obviously reduced the defect concentration in the wafer.Experimental data also shows, the defect concentration of wafer and heating-up temperature after processing, moulding pressure are relevant, and its Main Function of temperature range and pressure limit, but heating, pressurization and decompression rate are also to its effect of minimizing of defect concentration, above put down in writing preferred temperature and pressure scope, and preferred heating, pressurization and decompression rate.Cooling need not adopted specific process, naturally cools off behind the stopped heating to get final product.GaN wafer after employing is processed has increased disruptive field intensity as the laser diode that substrate forms, and has reduced electric leakage, has increased thermal conductivity, and the light emission effciency is higher, and reliability is larger.
High temperature high pressure device for the treatment of wafer of the present invention can adopt top, existing two sides and polyhedron high-pressure installation, and the polyhedron high-pressure installation comprises hexahedron pressure chamber device and the octahedra chamber device of pressing.The quiet high-pressure installation of large cavity is pushed up on the preferred two sides of adopting, and pushes up large press referred to as the two sides.The shell of this device and the material of depression bar are steel alloy, and pressing the material of anvil is tungsten carbide.Adopting this two sides to push up the maximum pressure that large press can reach is 7GPa.Polyhedron high-pressure installation and diamond anvil cell ultra-high pressure apparatus are low although its maximum pressure is compared, because its cavity volume is large, process the diameter of sample from about ten centimetres, are suitable for processing substrate wafer.
Be provided with electric calorifie installation in this high-pressure installation, it provides the heating heat by heating wire, to heating wafer after the electric calorifie installation energising.Heating-up temperature reaches as high as 1700 degrees centigrade.
Pressure medium is sodium chloride (NaCl), magnesium oxide (MgO) or liquid nitrogen, and this medium can make pressure be evenly distributed on the crystal, so that non-isotropy stress is minimum.
NaCl and MgO are low shearing strength solid, and its coefficient of internal friction is lower than 0.2, can well pressure transmission, play simultaneously heat insulation effect, and pressurization is beneficial to heat.Liquid nitrogen can be restrained the decomposition of GaN when heating and annealing when playing the pressure transmission effect.
Certainly; the present invention also can have other various embodiments; in the situation that do not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make according to the present invention various corresponding changes and distortion, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (5)
1. a GaN substrate laser diode comprises the n-GaN substrate, deposits successively N-shaped coating layer, N-shaped photoconductive layer and active layer on substrate, it is characterized in that,
The N-shaped coating layer is n-Al
aIn
bGa
1-a-bN, 0≤a wherein, b, a+b≤1;
The N-shaped photoconductive layer is n-Al
cIn
dGa
1-c-dN, 0≤c wherein, d, c+d≤1;
Active layer is the n-Al of superlattice structure
eIn
fGa
1-e-fN/n-AI
gIn
hGa
1-g-hThe N multiple quantum well layer, 0≤e wherein, f, g, h, e+f, g+h≤1.
2. GaN substrate laser diode as claimed in claim 1 is characterized in that, also deposits successively p-type barrier layer, p-type photoconductive layer and p-type coating layer on active layer.
3. GaN substrate laser diode as claimed in claim 2 is characterized in that, the p-type barrier layer is p-Al
iIn
jGa
1-i-jN, the p-type photoconductive layer is p-Al
kIn
1Ga
1-k-1N, the p-type coating layer is p-Al
mIn
nGa
1-m-nN, 0≤i wherein, j, k, l, m, n, i+j, k+1, m+n≤1.
4. the manufacture method of a GaN substrate laser diode comprises the steps, at first forms the GaN substrate, has secondly deposited successively N-shaped coating layer, N-shaped photoconductive layer, active layer, p-type barrier layer, p-type photoconductive layer and p-type coating layer on substrate, it is characterized in that,
The method that forms the GaN substrate comprises the steps:
(1) at normal temperatures and pressures, the GaN wafer is put into high temperature high pressure device, add transmission medium in high temperature high pressure device, this transmission medium is NaCL and liquid nitrogen;
Pressurization when (2) the GaN wafer being heated, being heated to temperature is 820～880 ℃, being forced into pressure is 4.1 ~ 4.6GPa, keeps 10～15 minutes;
(3) stopped heating makes the GaN wafer be cooled to normal temperature; Slowly release makes the GaN wafer return to normal pressure simultaneously.Release speed is 0.5～0.8GPa/ minute;
(4) in high temperature high pressure device, annealed 20～30 minutes after, take out the GaN wafer.
5. the manufacture method of GaN substrate laser diode as claimed in claim 4 is characterized in that, the rate of heat addition is 100 ℃/minute in the step (2), and compression rate is 0.2～0.3GPa/ minute.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762501A (en) * | 2014-01-26 | 2014-04-30 | 南通明芯微电子有限公司 | Manufacturing method for N-shaped GaAs substrate laser diode |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100108985A1 (en) * | 2008-10-31 | 2010-05-06 | The Regents Of The University Of California | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100108985A1 (en) * | 2008-10-31 | 2010-05-06 | The Regents Of The University Of California | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762501A (en) * | 2014-01-26 | 2014-04-30 | 南通明芯微电子有限公司 | Manufacturing method for N-shaped GaAs substrate laser diode |
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