CN102856640A - High-isolation dual-polarization E-type microstrip antenna with spurious wafer - Google Patents
High-isolation dual-polarization E-type microstrip antenna with spurious wafer Download PDFInfo
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Abstract
The invention discloses a high-isolation dual-polarization E-type microstrip antenna with a spurious wafer. The antenna has the advantages of high isolation, low cross polarization, small size and simple structure. The antenna adopts a double-layer E-type patch form; E-type patches are respectively printed on both upper and lower surfaces of an upper dielectric slab; slotting directions of the E-type patches are orthogonal; and two linear polarizations in the direction of plus and minus 45 degrees are respectively generated by coaxial probe feed. The high-isolation dual-polarization E-type microstrip antenna has the biggest innovations that two E-type patches are respectively printed on both the surfaces of the same dielectric slab; a conventional single-polarization E-type patch antenna is expanded to a dual-polarization E-type patch antenne; and the high isolation and the low cross polarization characteristic are obtained. Under the condition that the return loss is lower than minus 15dB, the bandwidth of 7.7 percent can be reached, the isolation is lower than minus 30dB, a directional diagram is stable, the cross polarization is good, and the gain is in the range of 6.8dBi-7.4dBi. The high-isolation dual-polarization E-type microstrip antenna can be applied to a micro mobile base station.
Description
Technical field
The invention belongs to the antenna works technical field, relate to a kind of double polarized micro strip antenna, is a kind of high isolation dual polarized E type microstrip antenna that can be used for the mini mobile base station specifically.
Background technology
Little base station (Pico) has that volume is little, power is little, lightweight, the characteristics that are easy to carry and install, is applicable to hot zones and indoor covering occasion.Simultaneously, little base station (Pico) can solve the difficulties that fast repairing is blind, the focus traffic is received and dispatched, low cost covers that current networking runs into well.Little base station (Pico) is as the relay forwarding station between base station and the cellphone subscriber, mainly be that radiofrequency signal to base station, location or user mobile phone receives, amplifies and retransmits, to increase field intensity, lower cost ground solves the communication blind district that a variety of causes forms, improve call completing rate, enlarge the coverage of base station service area, reach the purpose that service area extends.Along with the development that domestic network is built, the network degree of depth covers the main target that becomes operator.Vital effect is being brought into play in little base station (Pico) in networking and network optimization process.Little antenna for base station adopts ± 45 ° of dual polarization modes more, and dual polarized antenna can form a pair of polarization orthogonal, mode of operation that frequency is identical simultaneously.Because the distinctive advantage of dual polarized antenna, can receive the whole polarization informations in the electromagnetic wave, have very strong anti-interference, improve system sensitivity and consist of the abilities such as polarization system, therefore caused people's broad interest.
Microstrip antenna is because section is low, easily processing, and high conformity, the characteristics such as it is easy to control to polarize often are used to realize dual polarized antenna, little base station miniaturization that is content with very little, cheaply requirement.But how improving two isolations between the polarization, then is the subject matter that double polarized micro strip antenna faces.For this reason, aspect the high isolation dual polarized microstrip antenna of realization, Wuhan Hongxin Telecommunication Technologies Co., Ltd has announced a kind of feed structure of high isolation dual polarized microstrip antenna in patent CN201188461Y.The internal interference of antenna element own and the array that adopt anti-phase feed structure to eliminate between the double polarized micro strip antenna port disturb, thereby improve isolation and cross polarization.Between this antenna ends mouth in working frequency range isolation be lower than-28dB.But because the introducing of power splitter, so that antenna structure is complicated and its radiance also decreases.Institutes Of Technology Of Nanjing has announced a kind of dual-polarized low mutual coupling microstrip antenna unit that is applied to X-band in patent CN201536151U, by traditional H type groove coupling feed double polarized micro strip antenna is improved, make the H groove between U and H groove, realized the high-isolation characteristic, in working band, be lower than-40dB.But this kind structure is because the introducing of multilayer dielectricity plate adds that the air gap of fluting introducing is very large on the impact of antenna performance, and this is so that result's discrepancy of emulation and actual measurement is very large, and the processing mode cost that adopts is also high.Huawei Device Co., Ltd. has announced a kind of cost in patent CN102110906A low, the double polarized micro strip antenna of handling ease.Improve isolation by corner cut size and number, isolation reaches 25dB between 3.3GHz-3.7GHz, and is relatively low.Yang Fan is at IEEE TRANSACTIONS ON ANTENNAS ANDPROPAGATION, 2001. a kind of E type groove single card sheet microband antenna unit has been introduced in being entitled as in " Wide-Band E-Shaped Patch Antennas for Wireless Communications " of delivering, this antenna bandwidth of operation is 2.2GHz-2.7GHz.But section is high, and does not have the dual polarization characteristic.
Summary of the invention
The present invention is in view of above-mentioned technical background, and purpose is that the problem how double polarized micro strip antenna of low-cost to satisfying, low section, miniaturization improves isolation is studied, and proposed a kind of dual polarization E type paster antenna of the high-isolation with parasitic disk.
For solving above-mentioned technical problem, the present invention by the following technical solutions:
The invention provides a kind of dual polarization E type patch antenna element of the high-isolation with parasitic disk, comprise top dielectric plate and layer dielectric plate, described top dielectric plate is supported and is placed the top of layer dielectric plate by at least three plastics screws; Up and down two surfaces of described top dielectric plate are printed on respectively the E shape paster of the E shape paster of fluting direction-45 ° and fluting direction+45 °, the upper surface of layer dielectric plate is printed on circular patch, lower surface all covers copper as the metallic reflection plate, the E shape paster of the E shape paster of described fluting direction-45 ° and fluting direction+45 ° links to each other with one of them probe respectively and the circular hole by paster itself keeps the gap respectively and between another probe, described circular patch by two circular holes above it so that all keep the gap between it and two probes.
Further technical scheme is: the orthogonal thereto state of E type groove of the E shape paster of the E shape paster of described fluting direction-45 ° and fluting direction+45 °, and the length of each groove is different.
Further technical scheme is: the center of described circular patch does not overlap with center of antenna.
Further technical scheme is: the rectangular strip of the centre of the E shape paster of the E shape paster of described fluting direction-45 ° and fluting direction+45 ° all is truncated sub-fraction, and it is different that two E type pasters are truncated partial-length.
Further technical scheme is: all be notched around the E shape paster of the E shape paster of described fluting direction-45 ° and fluting direction+45 °, and four corner cut sizes for each E type paster are the same, and still the corner cut of two E type pasters is compared and varied in size.
Compared with prior art, one of beneficial effect of the present invention is: first E type paster is applied in the double polarized micro strip antenna, and has effectively realized miniaturization by loading circular patch, antenna thickness is 0.06 wavelength.In the situation of antenna element S11 less than-15dB, covered the 2.5GHz-2.69GHz frequency range, and in working band, antenna ends mouth isolation is lower than all-30dB.This antenna has simple in structure, and is lightweight, easily processing, and the characteristics that cost is low satisfy the basic demand of little antenna for base station.And known by emulation and actual measurement, the stable performance of antenna, insensitive to each parameter, be easy to the group battle array.
Description of drawings
Fig. 1 is a kind of dual polarization E type patch antenna element structure chart with parasitic disk of the present invention;
Fig. 2 is the vertical view of dual polarization E type paster antenna of the present invention;
Fig. 3 is the end view of dual polarization E type paster antenna of the present invention;
Fig. 4 is the obverse and reverse front view of the top dielectric plate of dual polarization E type paster antenna of the present invention;
Fig. 5 is the obverse and reverse front view of the layer dielectric plate of dual polarization E type paster antenna of the present invention;
Fig. 6 is S parameters simulation and the test curve figure of dual polarization E type paster antenna of the present invention;
Fig. 7 is emulation and the measured curve figure of dual polarization E type paster antenna two-port isolation of the present invention;
Fig. 8 is actual measurement E face and the H face directional diagram of dual polarization E type paster antenna of the present invention port one (+45 °) when 2.6GHz;
Fig. 9 be double polarized micro strip antenna of the present invention when 2.6GHz port 2(-45 °) actual measurement E face and H face directional diagram;
Figure 10 is actual measurement gain and the efficient of double polarized micro strip antenna of the present invention when 2.5-2.7GHz.
Embodiment
The present invention is further elaborated below in conjunction with accompanying drawing.
Fig. 1 shows the overall structure schematic diagram of one embodiment of the invention, with reference to shown in Figure 1, one embodiment of the present of invention are a kind of dual polarization E type patch antenna elements with parasitic disk, be provided with top dielectric plate 1 and layer dielectric plate 7 in this antenna element, described top dielectric plate 1 is supported and is placed the top of layer dielectric plate 7 by at least three plastics screws 6; Go out as shown in Figure 1, the plastics screw is set to four herein, and is distributed near four angles of top dielectric plate 1 and layer dielectric plate 7.
With reference to figure 2, Fig. 3 and shown in Figure 4, up and down two surfaces of described top dielectric plate 1 are printed on respectively the E type paster 3 of the E type paster 2 of fluting direction-45 ° and fluting direction+45 °, the E shape paster 2 of described fluting direction-45 ° links to each other with probe 4, and the E shape paster 2 of fluting direction-45 ° by itself circular hole 14 and probe 5 between keep the gap.Similarly, the E type paster 3 of described fluting direction+45 ° links to each other with probe 5, and the E type paster 3 of fluting direction+45 ° by itself circular hole 13 and probe 4 between keep the gap.
With reference to figure 2, Fig. 3 and shown in Figure 5, the upper surface of described layer dielectric plate 7 is printed on circular patch 9, and lower surface all covers copper as metallic reflection plate 8, and the circular hole on the circular patch 9 (10) and circular hole (11) are so that all keep the gap between circular patch 9 and probe 4 and the probe 5.The size of described metallic reflection plate 8 is the same with the lateral dimension of antenna.
Based on above-described embodiment, one of key technology means of the present invention are to have introduced circular hole 10, circular hole 11, circular hole 13 and circular hole 14.The diameter of described circular hole 10 and circular hole 11 is all greater than two through-hole diameter sizes on the top dielectric plate 1, and two through-hole diameters sizes on the top dielectric plate 1 and probe 4 and probe 5 is the same.The diameter of described circular hole 13 and circular hole 14 is big or small the same with two through-hole diameters on the layer dielectric plate 7, and two through-hole diameters sizes on the layer dielectric plate 7 are the same with coaxial probe outer conductor diameter.Such structure is not so that directly connect between probe 4 and the probe 5, is not easy to change direction so that pass through the path of the electric current that each probe flows to, thus the polarization purity when having improved each port feed.
With reference to shown in Figure 2, the orthogonal thereto state of E type groove of the E type paster 3 of the E type paster 2 of fluting direction-45 ° and fluting direction+45 ° its objective is that the polarised direction that each port is produced is vertical.The length of adjustment tank can be improved the beamwidth of antenna and increase cross polarization isolation.E shape paster 3 based on the E shape paster 2 of the aforementioned fluting direction-45 of mentioning ° and fluting direction+45 °, the execution mode that is more preferably is that the rectangular strip in the middle of them is blocked sub-fraction, be used for reducing current path, two are truncated the in different size of part, can be optimized for the impedance matching of each port.Further, E shape paster 3 based on the E shape paster 2 of the aforesaid fluting direction-45 of mentioning ° and fluting direction+45 °, around each E type paster all by etc. big or small corner cut, be used for reducing size, it is in different size that but the corner cut of E shape paster 2 is compared with the corner cut of E shape paster 3, also can be optimized for the impedance matching of each port.
Based on the above embodiment of the present invention, further preferred technical scheme is to introduce circular patch 9, this is equivalent to loading capacitance, reduced the resonance frequency of antenna, so that the working frequency range of antenna is moved toward low frequency, thereby reduced the size of antenna.Because antenna structure is asymmetric, the center of circular patch does not need to aim at the center of antenna yet, can adjust the cross polarization characteristics that Antenna Impedance Matching and antenna are improved in its position.
With reference to shown in Figure 3, the present invention is on above-mentioned basis for the embodiment that the technical solution problem is more preferably, because probe 4 is to link to each other with the E type paster 2 of fluting direction-45 °, so can directly weld at top dielectric plate 1 upper surface, but probe 5 is to link to each other with the E type paster 3 of fluting direction+45 °, to weld at the lower surface of top dielectric plate 1, difficulty of processing is a bit large because antenna is too thin, for addressing this problem, probe 5 can be by the upper surface welding of metallization via hole 12 in top dielectric plate 1, and its pad can not link to each other with the E type paster 2 of fluting direction-45 °, thereby so that probe 5 links to each other with the E shape paster 3 of fluting direction+45 °, this is so that the processing of antenna becomes simple.
The antenna running is: when with the dual polarization E type paster antenna of parasitic disk during at+45 degree polarization port feed, when microwave signal is entered by probe 5, electric current is by ° E type paster 3 transmission of fluting direction+45, electric current is along E type groove Flow Structure Nearby, and its Energy Coupling is to fluting direction-45 ° E type paster 2 and circular patch 9.Fluting direction-45 ° E type paster 2 and circular patch 9 have formed a distributed circuit circuit, and they provide the inductance capacitance component, have reduced the resonance frequency of antenna.The effect of metal floor 8 is the energy that reduce backward radiation, and most of energy is all to previous irradiation when making antenna work.
The present inventor is in its experimentation, based on inventive concept design with the contrast of the dual polarization E type patch antenna element return loss measured result of parasitic disk and simulation result with reference to shown in Figure 6, can be found out in return loss by simulation result to be lower than-situation of 15dB under, port one actual measurement relative bandwidth is 7.7%(2.48GHz-2.69GHz), port 2 actual measurement relative bandwidths are 7.7%(2.48GHz-2.69GHz).Measured result and simulation result coincide better.
Further, based on thought of the present invention design with the contrast of the actual measurement isolation of the dual polarization E type patch antenna element two-port of parasitic disk and simulation result with reference to shown in Figure 7.Can be found out that by measured result in the whole frequency range of 2.5GHz-2.69GHz, isolation is lower than-30dB.Measured result and simulation result coincide better.
When with the dual polarization E type paster antenna of parasitic disk during at+45 degree polarization port feed, the directional diagram that records at centre frequency 2.6GHz comprises E face main pole, the cross polarization of E face, H face main pole and the cross polarization of H face with reference to shown in Figure 8.Can be found out that by directional diagram the cross polarization level of E face and H face all is lower than in normal direction-25dB.
When with the dual polarization E type paster antenna of parasitic disk during at-45 degree polarization port feed, the directional diagram that records at centre frequency 2.6GHz comprises E face main pole, the cross polarization of E face, H face main pole and the cross polarization of H face with reference to shown in Figure 9.Can be found out that by directional diagram the cross polarization level of E face and H face all is lower than in normal direction-30dB.
Further, Figure 10 is respectively with the dual polarization E type paster antenna of parasitic disk during at+45 degree and-45 ° of polarization port feeds, at 2.5GHz to the gain of the scope internal antenna of 2.7GHz and the efficient change curve with frequency.Can be found out that by curve the gain of antenna in whole working band scope is at 6.8-7.4dBi, efficient all is higher than 78%.
Also need to prove, " embodiment " who speaks of in this manual, " another embodiment ", " embodiment ", etc., refer to specific features, structure or the characteristics described in conjunction with this embodiment and be included among at least one embodiment that the application's generality describes.A plurality of local appearance statement of the same race is not necessarily to refer to same embodiment in specification.Furthermore, when describing a specific features, structure or characteristics in conjunction with arbitrary embodiment, what advocate is to realize that in conjunction with other embodiment this feature, structure or characteristics also fall within the scope of the invention.
Although invention has been described with reference to a plurality of explanatory embodiment of the present invention here, but, should be appreciated that those skilled in the art can design a lot of other modification and execution modes, these are revised and execution mode will drop within the disclosed principle scope and spirit of the application.More particularly, in the scope of, accompanying drawing open in the application and claim, can carry out multiple modification and improvement to building block and/or the layout of subject combination layout.Except modification that building block and/or layout are carried out with improving, to those skilled in the art, other purposes also will be obvious.
Claims (4)
1. high isolation dual polarized E type microstrip antenna with parasitic disk, comprise top dielectric plate (1) and layer dielectric plate (7), described top dielectric plate (1) is supported and is placed the top of layer dielectric plate (7) by at least three plastics screws (6); It is characterized in that: up and down two surfaces of described top dielectric plate (1) are printed on respectively the E shape paster (3) of the E shape paster (2) of fluting direction-45 ° and fluting direction+45 °, the upper surface of layer dielectric plate (7) is printed on circular patch (9), lower surface all covers copper as metallic reflection plate (8), the E shape paster (2) of described fluting direction-45 ° links to each other with probe (4), and the E shape paster (2) of fluting direction-45 ° is by keeping the gap between circular hole (14) own and the probe (5); Similarly, the E shape paster (3) of described fluting direction+45 ° links to each other with probe (5), and the E shape paster (3) of fluting direction+45 ° is by keeping the gap between circular hole (13) own and the probe (4), probe (5) is by the upper surface welding of metallization via hole (12) in the top dielectric plate, realize being connected of E shape paster (2) of probe (5) and the direction-45 ° of slotting, described circular patch by the circular hole above it (10) and circular hole (11) so that all keep the gap between it and probe (4) and the probe (5).
2. a kind of high-isolation E type microstrip antenna with parasitic disk according to claim 1, it is characterized in that by introduce circular hole (13) and circular hole (14) with the E shape paster (3) of the E shape paster (2) of described fluting direction-45 ° and direction+45 ° of slotting simultaneously for microstrip antenna, realized dual polarization and obtained high-isolation.
3. a kind of high-isolation E type microstrip antenna with parasitic disk according to claim 1 is characterized in that loading circular patch (9) by introducing circular hole (10) and circular hole (11), realizes capacitive load.
4. a kind of high isolation dual polarized E type microstrip antenna with parasitic disk according to claim 2, the rectangular strip of centre of E shape paster (3) of the E shape paster (2) of direction-45 ° and fluting direction+45 ° of it is characterized in that slotting all is truncated sub-fraction, be used for reducing current path, remedied the length that increases E type groove and made the long shortcoming of current path.
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