CN102856465B - Light emitting diode packaging structure - Google Patents
Light emitting diode packaging structure Download PDFInfo
- Publication number
- CN102856465B CN102856465B CN201110179310.0A CN201110179310A CN102856465B CN 102856465 B CN102856465 B CN 102856465B CN 201110179310 A CN201110179310 A CN 201110179310A CN 102856465 B CN102856465 B CN 102856465B
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- led
- substrate
- package structure
- diode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004806 packaging method and process Methods 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000002245 particle Substances 0.000 claims abstract description 17
- 230000005855 radiation Effects 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 32
- 229910003460 diamond Inorganic materials 0.000 claims description 19
- 239000010432 diamond Substances 0.000 claims description 19
- 239000011852 carbon nanoparticle Substances 0.000 claims description 16
- 239000012790 adhesive layer Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- 150000002430 hydrocarbons Chemical class 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052799 carbon Inorganic materials 0.000 abstract description 4
- 239000012528 membrane Substances 0.000 abstract 2
- 230000000694 effects Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention provides a light emitting diode packaging structure which comprises a substrate plate, an electrode formed on the substrate, a light emitting diode chip fixed on the substrate and electrically connected with the electrode, and a packaging layer covering the light emitting diode chip on the substrate, wherein radiation particles are distributed in the packaging layer, and comprises carbon nanometer particles and diamond-like membranes which can be used for wrapping the carbon nanometer particles in the diamond-like membranes. According to the light emitting diode packaging structure provided by the invention, a carbon nanometer material and a diamond-like material are good in heat conduction efficiency, so that the radiating efficiency of the light emitting diode packaging structure can be effectively improved.
Description
Technical field
The present invention relates to a kind of semiconductor structure, particularly relate to a kind of package structure for LED.
Background technology
Light-emitting diode (Light Emitting Diode, LED) making of encapsulating structure normally first forms circuit structure on the substrate of a resin or plastics, then light-emitting diode chip for backlight unit to be fixed on substrate and to be electrically connected with circuit structure, finally forming encapsulated layer covering luminousing diode chip and cutting forms the light-emitting diode after multiple encapsulation.
But can produce amount of heat during light-emitting diode chip for backlight unit work, can affect greatly the life-span of light-emitting diode, therefore how being dissipated fast and effectively by the heat that light-emitting diode chip for backlight unit produces is the problem that industry makes great efforts to solve always.
Summary of the invention
In view of this, be necessary to provide a kind of package structure for LED with good heat radiating efficiency.
A kind of package structure for LED, comprise substrate, the electrode be formed on substrate, to be fixed on substrate and the light-emitting diode chip for backlight unit be electrically connected with electrode and the encapsulated layer of covering luminousing diode chip on substrate, be distributed with heat radiation particle in described encapsulated layer, described heat radiation particle comprises carbon nano-particle and this carbon nano-particle coated in interior class diamond film.
One deck class diamond film is adhered at the outer surface of carbon nano-particle, and by its uniform filling in encapsulated layer, because nano-sized carbon and class diamond all have very high heat conductivility, therefore, it is possible to impel the heat conductivility of encapsulated layer to improve, the heat that light-emitting diode chip for backlight unit is produced conducts to the outside of encapsulating structure comparatively fast, contribute to heat radiation, thus extend the useful life of package structure for LED.
With reference to the accompanying drawings, the invention will be further described in conjunction with specific embodiments.
Accompanying drawing explanation
Fig. 1 is the generalized section of the package structure for LED of first embodiment of the invention.
Fig. 2 is the generalized section of the package structure for LED of second embodiment of the invention.
Fig. 3 is the generalized section of the package structure for LED of third embodiment of the invention.
Main element symbol description
| Package structure for LED | 10、20、30 |
| Substrate | 11 |
| Upper surface | 111 |
| Lower surface | 112 |
| Side | 113 |
| Electrode | 12 |
| First electrode | 121 |
| Second electrode | 122 |
| Light-emitting diode chip for backlight unit | 13 |
| Wire | 131 |
| Fluorescence coating | 132 |
| Encapsulated layer | 14、24 |
| Faying face | 141 |
| Exiting surface | 142 |
| Heat radiation particle | 15 |
| Carbon nano-particle | 151 |
| Class diamond film | 152 |
| Reflector | 25 |
| Adhesive layer | 36 |
Following embodiment will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Embodiment
Refer to Fig. 1, the package structure for LED 10 that first embodiment of the invention provides, it comprises substrate 11, electrode 12, is fixed on substrate 11 and the encapsulated layer 14 of the light-emitting diode chip for backlight unit 13 be electrically connected with electrode 12 and covering luminousing diode chip 13.
The roughly rectangular tabular of this substrate 11, this substrate 11 comprises upper surface 111, the lower surface 112 relative with upper surface 111 and connects some sides 113 of this upper surface 111 and lower surface 112.Described upper surface 111 and lower surface 112 are plane, and this upper surface 111 is for carrying light-emitting diode chip for backlight unit 13.
Described electrode 12 is formed on substrate 11.Described electrode 12 is at least two, is respectively the first electrode 121 and the second electrode 122.Described first electrode 121 and the second electrode 122 interval are arranged, thus are electrically insulated.Described first electrode 121 and the second electrode 122 extend round about from the middle part of the upper surface 111 of substrate 11 respectively, and detour to lower surface 112 through the relative two sides 113 of substrate 11.This electrode 12 adopts metal material to make, such as copper, gold or alloy etc.The cross section of described first electrode 121 and the second electrode 122 roughly takes the shape of the letter U.
Described light-emitting diode chip for backlight unit 13 is installed on substrate 11.Concrete, this light-emitting diode chip for backlight unit 13 can be directly fixed on one of them electrode 12.In the present embodiment, this light-emitting diode chip for backlight unit 13 is fixed on the first electrode 121, and adopts wire 131 to be connected with the second electrode 122 routing with the first electrode 121 respectively by the electrode of this light-emitting diode chip for backlight unit 13.During concrete enforcement, the quantity of this light-emitting diode chip for backlight unit 13 can be one or more according to different demand.In the present embodiment, the quantity of described light-emitting diode chip for backlight unit 13 is one.This light-emitting diode chip for backlight unit 13 can adopt blue chip or gold-tinted chip etc. to reach different design needs.When light-emitting diode chip for backlight unit 13 adopts blue chip, can in the fluorescence coating 132 of outer surface one deck yellow of this light-emitting diode chip for backlight unit 13, with wherein a part of blue light that blue light-emitting diode chip for backlight unit 13 is sent inject fluorescence coating 132 excite after in forming white light with another part blue light.
Described encapsulated layer 14 covers described light-emitting diode chip for backlight unit 13 on substrate 11.This encapsulated layer 14 adopts transparent material, as the material such as silicones, epoxy resin is made.This encapsulated layer 14 is roughly rectangular, and it comprises the faying face 141 and the exiting surface 142 relative with this faying face 141 that combine with the upper surface 111 of substrate 11.The inner homogeneous of this encapsulated layer 14 is distributed with heat radiation particle 15.
Described heat radiation particle 15 comprises carbon nano-particle 151 and this carbon nano-particle 151 coated class diamond film 152 in the inner.Each carbon nano-particle 151 forms a heat radiation particle 15 by class diamond film 152 is coated.Such diamond film 152 is by transparent, high thermal conductivity and the material that refractive index is greater than the refractive index of encapsulated layer 14 is made.Such diamond film 152 adds one or more additives by hydrocarbon to be formed, described additive be selected from titanium (Ti), chromium (Cr), aluminium (Al), tungsten (Wu), silicon (Si) and silica (SiO) one or more.Such diamond film 152 can adopt the mode of coating or spraying to be formed at the outer surface of carbon nano-particle 151.This carbon nano-particle 151 and class diamond film 152 all have high thermal conductivity, it is distributed in encapsulated layer 14 equably, the heat accumulation of encapsulated layer 14 can be improved, make this encapsulated layer 14 have good heat dispersion, thus the heat that light-emitting diode chip for backlight unit produces can be distributed to outside package structure for LED 10 rapidly.The entire outer diameter of this heat radiation particle 15 is generally 15nm(nanometer, nanometer) between 30nm.Because the entire outer diameter of this heat radiation particle 15 is less, again due to the class diamond film 152 of this carbon nano-particle 151 coated light transmission and refractive index is larger, the light of directive heat radiation particle 15 as much as possiblely can be reflected by class diamond film 152 and reflects backward outer injection, thus avoid the direct directive carbon nano-particle 151 of light to produce the loss of light, while improving heat radiation, ensure the light extraction efficiency of package structure for LED 10 thus.In the present embodiment, the refractive index of class diamond film 152 is between 2.0 to 2.4, and the refractive index of described encapsulated layer 14 is between 1.2 to 1.6.Refractive index due to class diamond film 152 is greater than the refractive index of encapsulated layer 14, and the described heat radiation particle 15 that therefore distributes in this encapsulated layer 14 can also improve the extraction yield of light.
In above-described embodiment, a fluorescence coating 132 can also be formed in the upper surface of encapsulated layer 14, thus reach the effect of the optical characteristics improving the light that light-emitting diode chip for backlight unit 13 sends.
Please refer to Fig. 2, for the package structure for LED 20 that second embodiment of the invention provides, package structure for LED 10 difference of itself and the first embodiment is, the upper surface 111 of this substrate 11 is also formed one around light-emitting diode chip for backlight unit 13 at an interior reflector 25, described encapsulated layer 24 is filled in be launched in cup 25, thus covers this light-emitting diode chip for backlight unit 13 in the inside of reflector 25.The end face of this reflector 25 and the either flush of encapsulated layer 24, a fluorescence coating 232 is formed at described reflector 25 with on the end face of encapsulated layer 24.This reflector 25 is made up of the good material of reflecting properties, therefore, in the light that light-emitting diode chip for backlight unit 13 sends, some light reflects the backward outer injection of the original direction of illumination of rear change via reflector 25, thus makes beam projecting more concentrated, to coordinate the needs increasing light intensity.Understandable, this reflector 25 also can not be made for reflecting material, and directly on the inner surface that reflector 25 encloses this light-emitting diode chip for backlight unit 13, forms the reflector of being made up of the good material of reflecting properties, thus reaches identical reflecting effect.
Refer to Fig. 3, for the package structure for LED 30 that third embodiment of the invention provides, package structure for LED 10 difference of itself and the first embodiment is, the bottom of described light-emitting diode chip for backlight unit 13 is fitted and connected on the first electrode 121 of substrate 11 by an adhesive layer 36.This adhesive layer 36 adopts colloidal materials to make, and its inner homogeneous is distributed with carbon nano-particle 151.Therefore, the heat part that light-emitting diode chip for backlight unit 13 produces upwards conducts to encapsulated layer 14, and outwards distributes via the heat radiation particle 15 in encapsulated layer 14, and another part conducts downwards, conducts to substrate 11 through adhesive layer 36, is outwards distributed by substrate 11.Owing to being distributed with the good carbon nano-particle of heat conductivility 151 in adhesive layer 36, therefore while the heat produced at light-emitting diode chip for backlight unit 13 upwards outwards distributes via encapsulated layer 14, be conducive to accelerated luminescence diode chip for backlight unit 13 to produce the downward of heat and conduct via adhesive layer 36, make heat conduct to substrate 11 fast and be distributed to the outside of package structure for LED 30 by substrate 11, making radiating effect remarkable.
Be understandable that, for the person of ordinary skill of the art, other various corresponding change and distortion can be made by technical conceive according to the present invention, and all these change the protection range that all should belong to the claims in the present invention with distortion.
Claims (10)
1. a package structure for LED, comprise substrate, the electrode be formed on substrate, to be fixed on substrate and the light-emitting diode chip for backlight unit be electrically connected with electrode and the encapsulated layer of covering luminousing diode chip on substrate, it is characterized in that: be distributed with heat radiation particle in described encapsulated layer, described heat radiation particle comprises carbon nano-particle and this carbon nano-particle coated in interior class diamond film.
2. package structure for LED as claimed in claim 1, is characterized in that: the external diameter of described heat radiation particle is 15nm to 30nm.
3. package structure for LED as claimed in claim 1, it is characterized in that: described class diamond film and encapsulated layer are made by the material of printing opacity, the refractive index of class diamond film is greater than the refractive index of encapsulated layer.
4. package structure for LED as claimed in claim 1, it is characterized in that: the refractive index of described class diamond film is 2.0 to 2.4, the refractive index of this encapsulated layer is 1.2 to 1.6.
5. package structure for LED as claimed in claim 1, is characterized in that: described class diamond film adds additive by hydrocarbon to be formed, described additive be selected from titanium, chromium, aluminium, tungsten, silicon and silica one or more.
6. package structure for LED as claimed in claim 1, is characterized in that: be also formed with an adhesive layer between described light-emitting diode chip for backlight unit and substrate, is distributed with carbon nano-particle in this adhesive layer.
7. package structure for LED as claimed in claim 1, is characterized in that: one deck fluorescence coating is adhered in the outside of described light-emitting diode chip for backlight unit.
8. package structure for LED as claimed in claim 1, it is characterized in that: described substrate is also formed one around light-emitting diode chip for backlight unit in interior reflector, described encapsulated layer is filled in the inside of reflector, thus covering luminousing diode chip is in the inside of this reflector.
9. package structure for LED as claimed in claim 8, is characterized in that: the outer surface of described encapsulated layer is formed with a fluorescence coating.
10. package structure for LED as claimed in claim 1, is characterized in that: described electrode is at least two, and this at least two electrode gap is arranged, and described light-emitting diode chip for backlight unit and this at least two electrodes routing are connected on substrate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110179310.0A CN102856465B (en) | 2011-06-29 | 2011-06-29 | Light emitting diode packaging structure |
| TW100123174A TWI425675B (en) | 2011-06-29 | 2011-06-30 | Led package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110179310.0A CN102856465B (en) | 2011-06-29 | 2011-06-29 | Light emitting diode packaging structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102856465A CN102856465A (en) | 2013-01-02 |
| CN102856465B true CN102856465B (en) | 2015-03-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110179310.0A Active CN102856465B (en) | 2011-06-29 | 2011-06-29 | Light emitting diode packaging structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102856465B (en) |
| TW (1) | TWI425675B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794602A (en) * | 2014-01-26 | 2014-05-14 | 哈尔滨鎏霞光电技术有限公司 | All-directional light-outlet efficient LED module device |
| CN104766917A (en) * | 2015-03-27 | 2015-07-08 | 东莞市凯昶德电子科技股份有限公司 | Ceramic substrate on which LED is directly packaged |
| US10529641B2 (en) * | 2016-11-26 | 2020-01-07 | Texas Instruments Incorporated | Integrated circuit nanoparticle thermal routing structure over interconnect region |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005197317A (en) * | 2003-12-26 | 2005-07-21 | Toshiba Corp | Solid-state lighting element |
| TWI250668B (en) * | 2004-09-27 | 2006-03-01 | Advanced Optoelectronic Tech | Light apparatus emitting light with multiple wavelengths via nanometer fluorescent material, light device and manufacturing method thereof |
| CN101208811A (en) * | 2005-08-05 | 2008-06-25 | 松下电器产业株式会社 | Semiconductor light-emitting device |
| JPWO2007018039A1 (en) * | 2005-08-05 | 2009-02-19 | パナソニック株式会社 | Semiconductor light emitting device |
| KR100693463B1 (en) * | 2005-10-21 | 2007-03-12 | 한국광기술원 | Light diffusion type light emitting diode |
| KR100845856B1 (en) * | 2006-12-21 | 2008-07-14 | 엘지전자 주식회사 | LED package and method of manufacturing the same |
| TWI385826B (en) * | 2008-05-16 | 2013-02-11 | Epistar Corp | A led device comprising a transparent material lamination having graded refractive index, or a led device having heat dissipation property, and applications of the same |
| CN101661983B (en) * | 2008-08-26 | 2012-03-14 | 富准精密工业(深圳)有限公司 | Light emitting diode (LED) and preparation method thereof |
-
2011
- 2011-06-29 CN CN201110179310.0A patent/CN102856465B/en active Active
- 2011-06-30 TW TW100123174A patent/TWI425675B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN102856465A (en) | 2013-01-02 |
| TWI425675B (en) | 2014-02-01 |
| TW201301572A (en) | 2013-01-01 |
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Owner name: SCIENBIZIP CONSULTING (SHENZHEN) CO., LTD. Free format text: FORMER OWNER: ZHANJING TECHNOLOGY (SHENZHEN) CO., LTD. Effective date: 20150209 Free format text: FORMER OWNER: ADVANCED OPTOELECTRONIC TECHNOLOGY INC. Effective date: 20150209 |
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Effective date of registration: 20150209 Address after: 518109 Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Applicant after: SCIENBIZIP CONSULTING (SHEN ZHEN) CO., LTD. Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Street tabulaeformis Industrial Zone tenth east two Ring Road No. two Applicant before: Zhanjing Technology (Shenzhen) Co., Ltd. Applicant before: Advanced Optoelectronic Technology Inc. |
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Effective date of registration: 20150914 Address after: Two road 519000 Guangdong province Zhuhai Nanping Science and Technology Industrial Park, 8 No. two building on the north side of the screen Patentee after: ZHUHAI HONGGUANG LIGHTING FIXTURE CO.,LTD. Address before: 518109 Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Patentee before: SCIENBIZIP CONSULTING (SHEN ZHEN) CO., LTD. |
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Address after: 519000 north side of 2nd floor, No.8 pinggong 2nd Road, Nanping Science and Technology Industrial Park, Zhuhai City, Guangdong Province Patentee after: Zhuhai Hongguang Semiconductor Co.,Ltd. Address before: North side of the second floor, No. 8, pinggong Second Road, Nanping Science and Technology Industrial Park, Zhuhai Patentee before: ZHUHAI HONGGUANG LIGHTING FIXTURE CO.,LTD. |