CN102856150B - Plasm reaction cavity cleaning device and plasm reaction cavity cleaning method thereof - Google Patents
Plasm reaction cavity cleaning device and plasm reaction cavity cleaning method thereof Download PDFInfo
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- CN102856150B CN102856150B CN201210371965.2A CN201210371965A CN102856150B CN 102856150 B CN102856150 B CN 102856150B CN 201210371965 A CN201210371965 A CN 201210371965A CN 102856150 B CN102856150 B CN 102856150B
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Abstract
The invention discloses a kind of plasm reaction cavity cleaning device, comprise multiple appendix, the through plasm reaction cavity wall at interval, the sidewall of its extension and chamber wall forms angle; Appendix can also arrange fast-acting modulator valve, the gas flow in control inputs reaction chamber.A kind of plasm reaction cavity cleaning method for said apparatus, in reaction chamber, the gas with cleaning capacity is first inputted by gas tip, then in reaction chamber, gas is inputted by apparatus of the present invention, gas ionization is plasma, continue through apparatus of the present invention in reaction chamber, input gas stirring plasma formation eddy current, plasma-vortex strenuous exercise and the interior polymer deposited of reaction chamber react, and are discharged by gas after cleaning terminates.The present invention can make plasma form eddy current strenuous exercise, improve the reaction probabilities that plasma and difficulty clean the polymer of site deposition, thus the cleansing power of the polymer of site deposition is cleaned in raising to difficulty.
Description
Technical field
The present invention relates to a kind of plasma etch apparatus, particularly relate to a kind of plasma etch apparatus reaction chamber cleaning device and method.
Background technology
As shown in Figure 1, a kind of plasma etch apparatus of prior art, its reaction chamber 9 is provided with the chamber wall 2 of coated internal working volume, top electrode assembly 3, bottom electrode assembly 4 is provided with in chamber wall 2, top electrode assembly 3 comprises the heater 31, the gas tip 32 that are arranged in reaction chamber 9 top inner wall, and the top ground ring 33 be successively set on around gas tip 32 and movable limit collar 34; Bottom electrode assembly 4 is arranged on below top electrode assembly 3, comprises electrostatic chuck 41, is successively set on focusing ring 42, cover ring 43 around electrostatic chuck 41; Below cover ring 43, be also equipped with limit collar 5 around electrostatic chuck 41, reaction chamber 9 is outside equipped with exhaust pump 6.Bottom electrode assembly 4 is connected with the radio-frequency power supply of plasma etch apparatus, the gas inputted in reaction chamber 9 by gas tip 32 is ionized as plasma 71 between top electrode 3 and bottom electrode 4, and the post plasma 71 of reaction is discharged outside reaction chamber 9 by exhaust pump 6 for gas 72 by neutralization after limit collar 5.
Plasma etch apparatus is carrying out in the process etched, plasma and wafer react, and the polymer that etching reaction generates easily is deposited on plasma etch apparatus reaction chamber inwall, impact etching, pollute wafer, therefore need plasma etching apparatus reaction chamber to clean.The reaction chamber cleaning method of prior art uses dry method to clean usually, there is from gas tip 32 input the gas of cleaning capacity, gas is ionized as there is chemical reaction with the polymer 8 be deposited on reaction chamber inwall after plasma 7, thus disposes the polymer 8 of deposition and make product discharge reaction chamber 9 with gas.There is following problem in existing etching apparatus and cleaning method: because cover ring 43, movable limit collar 34 are nonconductive structures and are positioned at the edge corner portions of top electrode, bottom electrode, these position electric fields are more weak, the polymer 8 being deposited on these positions during etching is many, and the plasma density at these positions is lower when cleaning, chemical reaction is more weak, and the polymer 8 of deposition compares and is difficult to wash.
Summary of the invention
The invention provides a kind of plasm reaction cavity cleaning device and plasma reaction chamber cleaning method thereof, the plasma in plasma etch apparatus reaction chamber can be made to form eddy current, raising plasma and difficulty clean the reaction probabilities of the polymer of site deposition, thus improve the cleansing power of polymer difficulty being cleaned to site deposition.
The present invention realizes by the following technical solutions: a kind of plasm reaction cavity cleaning device, the reactor wall of the part-structure of this device through plasma etch apparatus from outside to inside, described plasma etch apparatus reactor wall coated plasma apparatus reaction chamber internal working volume, top electrode assembly, bottom electrode assembly is provided with in this chamber wall, top electrode assembly air inclusion shower nozzle and the top ground ring, the movably limit collar that are successively set on around gas tip, described bottom electrode assembly is connected with the radio-frequency power supply of plasma etch apparatus; Be characterized in, described plasm reaction cavity cleaning device comprises multiple appendix, the chamber wall of multiple described appendix compartment of terrain through plasma etch apparatus reaction chamber from outside to inside, multiple described extension of appendix and the sidewall of chamber wall form angle; Tilt to input reaction chamber by the gas with cleaning capacity by multiple described appendix, described gas is plasma by bottom electrode assembly ionization, is continued the gas stirring plasma formation eddy current inputted, cleaning reaction chamber by multiple described appendix.
Above-mentioned plasm reaction cavity cleaning device, is characterized in, multiple described appendix horizontal positioned.
Above-mentioned plasm reaction cavity cleaning device, is characterized in, multiple described appendix is arranged on top ground ring.
Above-mentioned plasm reaction cavity cleaning device, is characterized in, multiple described appendix is arranged on movable limit collar.
Above-mentioned plasm reaction cavity cleaning device, is characterized in, multiple described appendix is arranged on the sidewall of chamber wall.
Above-mentioned plasm reaction cavity cleaning device, is characterized in, described plasm reaction cavity cleaning device also comprises multiple adjuster valve, and each described adjuster valve is separately positioned on each appendix.
Above-mentioned plasm reaction cavity cleaning device, be characterized in, described plasm reaction cavity cleaning device at least also comprises a fast-acting modulator valve and total gas pipeline, and described fast-acting modulator valve is arranged on total gas pipeline, and each described appendix also receives total gas pipeline.
A kind of plasm reaction cavity cleaning method, for above-mentioned plasm reaction cavity cleaning device, be characterized in, described cleaning method comprises following steps:
Step 1, inputs the gas with cleaning capacity in plasm reaction cavity by gas tip;
Step 2, inputs the gas with cleaning capacity in reaction chamber by described plasm reaction cavity cleaning device;
Step 3, the gas be input in reaction chamber by step 1 and step 2 is ionized as plasma by the high frequency RF power source by bottom electrode assembly; Keep while gas ionization and in reaction chamber, input gas by described plasm reaction cavity cleaning device, because the extension of described multiple appendixs and the sidewall of chamber wall form angle, the gas inputted by multiple appendix makes the plasma in reaction chamber form eddy current; Plasma-vortex strenuous exercise chaotic in reaction chamber, Plasma contact is to each position in reaction chamber, react with the polymer of deposition and clean, because the plasma motion forming eddy current is very violent, in reaction chamber, the position of difficult cleaning is also cleaned to;
Step 4, described multiple appendixs are provided with fast-acting modulator valve, regulate fast-acting modulator valve to control air-flow input, produce gas pulses, make the plasma-vortex in reaction chamber more violent; Plasma-vortex chaotic in reaction chamber moves more tempestuously, plasma touches each position in reaction chamber better, react with the polymer of deposition and clean, because the plasma motion forming eddy current is very violent, in reaction chamber, the position of difficult cleaning is cleaned better;
Step 5, after cleaning process terminates, the plasma neutralization in reaction chamber is gas, is discharged by the exhaust pump of reaction chamber outside.
Above-mentioned plasm reaction cavity cleaning method, is characterized in, described step 3 gas ionization, continues input gas and step 4 and regulates fast-acting modulator valve to control air-flow to be input as and to carry out simultaneously.
Above-mentioned plasm reaction cavity clean method, is characterized in, described plasm reaction cavity scavenging period routine is set to 20-120 second.
Compared with prior art, the present invention has following beneficial effect:
1) the present invention is owing to being provided with multiple appendix, and multiple appendix tilts to extend in plasma etch apparatus reaction chamber, the plasma with cleaning capacity tilted in the gas stirring reaction chamber of input forms eddy current strenuous exercise, add the polymer contact of difficult clean site deposition in plasma and reaction chamber and the probability reacted, thus improve the cleansing power to reaction chamber.
2) the present invention is owing to being provided with fast-acting modulator valve, the uninterrupted being input to the gas in reaction chamber by multiple appendix can be regulated, gas pulses can be inputted in reaction chamber, thus make the plasma-vortex of formation in reaction chamber more violent, further increase the cleansing power to reaction chamber.
Accompanying drawing explanation
Fig. 1 is the reaction chamber structural representation of prior art plasma etch apparatus;
Fig. 2 is the structural representation of one of plasm reaction cavity cleaning device embodiment of the present invention;
Fig. 3 is the structural representation of plasm reaction cavity cleaning device embodiment two of the present invention;
Fig. 4 is the vertical view that plasm reaction cavity cleaning device of the present invention extends in the reaction chamber of plasma etch apparatus;
Fig. 5 is structural representation plasm reaction cavity cleaning device appendix of the present invention being provided with fast-acting modulator valve;
Fig. 6 is that plasm reaction cavity cleaning device of the present invention inputs periodically variable gas curve chart;
Fig. 7 is the schematic flow sheet of plasm reaction cavity cleaning method of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further elaborated.
As shown in accompanying drawing 2 and accompanying drawing 3, a kind of plasma etch apparatus, its reaction chamber 9 is provided with the chamber wall 2 of coated internal working volume, top electrode assembly 3, bottom electrode assembly 4 is provided with in chamber wall 2, top electrode assembly 3 comprises the heater 31, the gas tip 32 that are arranged in reaction chamber 9 top inner wall, and the top ground ring 33 be successively set on around gas tip 32 and movable limit collar 34; Bottom electrode assembly 4 is arranged on below top electrode assembly 3, comprises electrostatic chuck 41, is successively set on focusing ring 42, cover ring 43 around electrostatic chuck 41; Below cover ring 43, be also equipped with limit collar 5 around electrostatic chuck 41, reaction chamber 9 is outside equipped with exhaust pump 6.Bottom electrode assembly 4 is connected with the radio-frequency power supply of plasma etch apparatus, the gas inputted in reaction chamber 9 by gas tip 32 is ionized as plasma 71 between top electrode 3 and bottom electrode 4, and the post plasma 71 of reaction is discharged outside reaction chamber 9 by exhaust pump 6 for gas 72 by neutralization after limit collar 5.In figure, arrow represents the flow direction of gas.Shown in accompanying drawings 4, a kind of plasm reaction cavity cleaning device 1 of the present invention, comprise multiple appendix 11, the chamber wall 2 of multiple appendix 11 compartment of terrain through plasma etch apparatus reaction chamber 9 from outside to inside, the extension horizontal positioned of appendix 11, and form angle with the sidewall of chamber wall 2, thus make the extension of multiple appendix 11 and reaction chamber 9 be formed radially angle.In Fig. 4, arrow represents the flow direction of gas.The quantity of appendix 11 can be arranged according to various factorss such as reaction chamber volume, reaction chamber internal gas pressures.Gas tilts to send in reaction chamber 9 by the extension of multiple appendix 11, and the plasma 71 of multiply in the gas stirring reaction chamber that same level surface thereof inputs, makes plasma 71 form eddy current.Coordinate accompanying drawings 2 and accompanying drawing 3, chaotic plasma-vortex strenuous exercise, the probability touching the position that difficulty cleans in reaction chamber 9 increases, and adds the difficult polymer of cleaning portion faces deposition and the probability of plasma reaction.The bearing of trend of each appendix 11 and and the sidewall of chamber wall 2 between angle can arrange at random, and each other can be inconsistent, to make the gas that is input in reaction chamber 9 more chaotic, more violent to the stirring of the plasma 71 in reaction chamber 9, the plasma-vortex of generation is fiercer.
The present invention has various embodiments, and multiple appendix 11 is from the outside through reactor wall 2 of plasma apparatus reaction chamber 9, and appendix 11 can be arranged on the optional position except gas tip 31 being positioned at limit collar more than 5.
Shown in accompanying drawings 2, wherein the first embodiment, multiple appendix 11 is arranged on top ground ring 33.
Shown in accompanying drawings 3, wherein the second embodiment, multiple appendix arranges 11 on movable limit collar 34.
Wherein the third embodiment, multiple appendix 11 is arranged on the sidewall of the chamber wall 2 being positioned at limit collar more than 5.Shown in accompanying drawings 2 and accompanying drawing 3, movable limit collar 34 can move up and down, when movable limit collar 34 moves, multiple appendix 11 can be arranged on the sidewall of chamber wall 2, and input gas is had an effect to the plasma 71 between top electrode assembly 3 and bottom electrode assembly 4.
Shown in accompanying drawings 5, appendix 11 can also arrange fast-acting modulator valve 12.For the setting of adjuster valve 12, the present invention has two kinds of embodiments.Wherein the first embodiment, plasm reaction cavity cleaning device 1 also comprises multiple adjuster valve 12, and each adjuster valve 12 is separately positioned on each appendix 11, the independent gas input controlling each appendix 11.Wherein the second embodiment, plasm reaction cavity cleaning device 1 at least also comprises a fast-acting modulator valve 12 and total gas pipeline, fast-acting modulator valve 12 is arranged on total gas pipeline, each appendix 11 also receives total gas pipeline, by the unified gas input controlling multiple appendix 11 of the fast-acting modulator valve 12 on the total gas pipeline of condition.
By opening and closing or the aperture size of regular or random adjustment fast-acting modulator valve 12, produce size change at random or regular change gas pulses, make the gas being inputted reaction chamber 9 by appendix 11 more violent to the stirring of the plasma in reaction chamber 9, thus make fiercer plasma-vortex and the whirly of formation in reaction chamber 9.Accompanying drawings 6 controls shown in the time dependent curve of gas flow by fast-acting modulator valve, in the present embodiment, periodically inputted the gas of the 0-100sccm/0-200sccm of throughput change with 2 seconds for one-period, make the violent eddy current of the plasma generation in reaction chamber 9.
Shown in accompanying drawings 7, a kind of plasm reaction cavity cleaning method, for above-mentioned plasm reaction cavity cleaning device 1, this cleaning method comprises following steps:
Step 1, inputs the gas with cleaning capacity in plasm reaction cavity 9 by gas tip 32, make reaction chamber 9 internal gas pressure be greater than 200mT.This gas uses oxygen or nitrogen etc. to have the gas of cleaning capacity to polymer usually;
Step 2, in reaction chamber 9, input the gas with cleaning capacity identical with step 1 by plasm reaction cavity cleaning device 1 of the present invention, gas flow routine is set to 100-200sccm;
Step 3, the gas be input in reaction chamber 9 by step 1 and step 2 is ionized as plasma 71 by the high frequency RF power source by bottom electrode assembly 4; Keep while gas ionization and in reaction chamber 9, input gas by described plasm reaction cavity cleaning device 1, because the extension of described multiple appendixs 11 and the sidewall of chamber wall 2 form angle, the gas inputted by multiple appendix 11 makes the plasma 71 in reaction chamber 9 form eddy current; Plasma-vortex strenuous exercise chaotic in reaction chamber 9, plasma 71 touches each position in reaction chamber 9, react with the polymer of deposition and clean, because the plasma 71 forming eddy current moves very violent, in reaction chamber 9, the position of difficult cleaning is also cleaned to;
Step 4, described multiple appendixs 11 are provided with fast-acting modulator valve 12, regulate opening and closing and the aperture size of fast-acting modulator valve 12, control air-flow input, produce size change at random or regular change gas pulses, makes the plasma-vortex in reaction chamber 9 more violent; Plasma-vortex chaotic in reaction chamber 9 moves more tempestuously, plasma 71 touches each position in reaction chamber 9 better, react with the polymer of deposition and clean, because the plasma 71 forming eddy current moves very violent, in reaction chamber 9, the position of difficult cleaning is cleaned better;
Step 5, after cleaning process terminates, the plasma 71 in reaction chamber 9 is gas 72 by neutralization after limit collar 5, is discharged outside reaction chamber 9 by exhaust pump 6.
Step 3 gas ionization, continue input gas and step 4 and regulate fast-acting modulator valve to control air-flow to be input as and to carry out simultaneously.
The situation that plasm reaction cavity scavenging period deposits according to reaction chamber interpolymer is arranged, and routine is set to 20-120 second.
In sum, the present invention is owing to being provided with multiple appendix, and multiple appendix tilts to extend in plasma etch apparatus reaction chamber, the plasma with cleaning capacity tilted in the gas stirring reaction chamber of input forms eddy current strenuous exercise, add the polymer contact of difficult clean site deposition in plasma and reaction chamber and the probability reacted, thus improve the cleansing power to reaction chamber.Owing to being provided with fast-acting modulator valve, the uninterrupted being input to the gas in reaction chamber by multiple appendix can be regulated, gas pulses can be inputted in reaction chamber, thus make the plasma-vortex of formation in reaction chamber more violent, further increase the cleansing power to reaction chamber.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (8)
1. a plasm reaction cavity cleaning device (1), the reactor wall (2) of the part-structure of this device through plasma etch apparatus from outside to inside, described plasma etch apparatus reactor wall (2) coated plasma apparatus reaction chamber (9) internal working volume, top electrode assembly (3) is provided with in this chamber wall (2), bottom electrode assembly (4), top electrode assembly (3) air inclusion shower nozzle (32) and the top ground ring (33) be successively set on around gas tip (32), movable limit collar (34), described bottom electrode assembly (4) is connected with the radio-frequency power supply of plasma etch apparatus, it is characterized in that,
Described plasm reaction cavity cleaning device (1) comprises multiple appendix (11), the chamber wall (2) of multiple described appendix (11) compartment of terrain through plasma etch apparatus reaction chamber (9) from outside to inside, multiple described extension of appendix (11) and the sidewall of chamber wall (2) form angle; By multiple described appendix (11), the gas with cleaning capacity is tilted to input reaction chamber (9), described gas is plasma (71) by bottom electrode assembly (4) ionization, the gas stirring plasma (71) being continued input by multiple described appendix (11) forms eddy current, cleaning reaction chamber (9);
Described multiple appendix (11) is respectively arranged with fast-acting modulator valve (12), produces gas pulses by the opening and closing or aperture size regulating fast-acting modulator valve (12), the plasma in reaction chamber is stirred more violent.
2. plasm reaction cavity cleaning device (1) as claimed in claim 1, is characterized in that, multiple described appendix (11) horizontal positioned.
3. plasm reaction cavity cleaning device (1) as claimed in claim 1, is characterized in that, multiple described appendix (11) is arranged on top ground ring (33).
4. plasm reaction cavity cleaning device (1) as claimed in claim 1, is characterized in that, multiple described appendix (11) is arranged on movable limit collar (34).
5. plasm reaction cavity cleaning device (1) as claimed in claim 1, is characterized in that, multiple described appendix (11) is arranged on the sidewall of chamber wall (2).
6. a plasm reaction cavity cleaning device (1), the reactor wall (2) of the part-structure of this device through plasma etch apparatus from outside to inside, described plasma etch apparatus reactor wall (2) coated plasma apparatus reaction chamber (9) internal working volume, top electrode assembly (3) is provided with in this chamber wall (2), bottom electrode assembly (4), top electrode assembly (3) air inclusion shower nozzle (32) and the top ground ring (33) be successively set on around gas tip (32), movable limit collar (34), described bottom electrode assembly (4) is connected with the radio-frequency power supply of plasma etch apparatus, it is characterized in that,
Described plasm reaction cavity cleaning device (1) comprises multiple appendix (11), the chamber wall (2) of multiple described appendix (11) compartment of terrain through plasma etch apparatus reaction chamber (9) from outside to inside, multiple described extension of appendix (11) and the sidewall of chamber wall (2) form angle; By multiple described appendix (11), the gas with cleaning capacity is tilted to input reaction chamber (9), described gas is plasma (71) by bottom electrode assembly (4) ionization, the gas stirring plasma (71) being continued input by multiple described appendix (11) forms eddy current, cleaning reaction chamber (9);
Described plasm reaction cavity cleaning device (1) at least also comprises a fast-acting modulator valve (12) and total gas pipeline, described fast-acting modulator valve (12) is arranged on total gas pipeline, each described appendix (11) also receives total gas pipeline, produce gas pulses by the opening and closing or aperture size that regulate fast-acting modulator valve (12), the plasma in reaction chamber is stirred more violent.
7. a plasm reaction cavity cleaning method, for plasm reaction cavity cleaning device (1) according to claim 1, it is characterized in that, described cleaning method comprises following steps:
Step 1, has the gas of cleaning capacity by gas tip (32) input in plasm reaction cavity (9);
Step 2, has the gas of cleaning capacity by the input in reaction chamber (9) of described plasm reaction cavity cleaning device (1);
Step 3, the gas be input in reaction chamber (9) by step 1 and step 2 is ionized as plasma (71) by the high frequency RF power source by bottom electrode assembly (4); Keep by described plasm reaction cavity cleaning device (1) input gas in reaction chamber (9) while gas ionization, because the extension of described multiple appendixs (11) and the sidewall of chamber wall (2) form angle, the gas inputted by multiple appendix (11) makes the plasma (71) in reaction chamber (9) form eddy current; Plasma-vortex strenuous exercise chaotic in reaction chamber (9), plasma (71) touches each position in reaction chamber (9), react with the polymer of deposition and clean, because plasma (71) motion forming eddy current is very violent, in reaction chamber (9), the position of difficult cleaning is also cleaned to;
Step 4, described multiple appendixs (11) are provided with fast-acting modulator valve (12), regulate fast-acting modulator valve (12) to control air-flow input, produce gas pulses, make the plasma-vortex in reaction chamber (9) more violent; Plasma-vortex chaotic in reaction chamber (9) moves more tempestuously, plasma (71) touches each position in reaction chamber (9) better, react with the polymer of deposition and clean, because plasma (71) motion forming eddy current is very violent, in reaction chamber (9), the position of difficult cleaning is cleaned better;
Step 5, after cleaning process terminates, plasma (71) neutralization in reaction chamber (9) is gas (72), and the exhaust pump outside by reaction chamber (9) is discharged;
Wherein, step 3 gas ionization, continue input gas and step 4 and regulate fast-acting modulator valve to control air-flow to input and carry out simultaneously.
8. plasm reaction cavity cleaning method as claimed in claim 7, it is characterized in that, described plasm reaction cavity scavenging period routine is set to 20-120 second.
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| CN111383884B (en) * | 2018-12-27 | 2023-03-10 | 中微半导体设备(上海)股份有限公司 | Plasma confinement system and method |
| CN111584338B (en) * | 2020-05-11 | 2022-06-10 | 深圳市华星光电半导体显示技术有限公司 | Etching device |
| CN113745081B (en) * | 2020-05-27 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | Isolation ring assembly, plasma processing device and processing method |
| CN113000487B (en) * | 2021-02-24 | 2022-04-26 | 理想晶延半导体设备(上海)股份有限公司 | Tubular cleaning equipment and photovoltaic coating system |
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| EP0328417A1 (en) * | 1988-02-12 | 1989-08-16 | Toshikazu Suda | Apparatus for semiconductor process including photo-excitation process |
| CN1914716A (en) * | 2004-01-28 | 2007-02-14 | 东京毅力科创株式会社 | Method for cleaning process chamber of substrate processing apparatus, substrate processing apparatus, and method for processing substrate |
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| KR20030001695A (en) * | 2001-06-26 | 2003-01-08 | 삼성전자 주식회사 | cleaning equipment of HDP CVD chamber and method there of |
| JP2006524914A (en) * | 2003-03-31 | 2006-11-02 | 東京エレクトロン株式会社 | Plasma processing system and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP0328417A1 (en) * | 1988-02-12 | 1989-08-16 | Toshikazu Suda | Apparatus for semiconductor process including photo-excitation process |
| CN1914716A (en) * | 2004-01-28 | 2007-02-14 | 东京毅力科创株式会社 | Method for cleaning process chamber of substrate processing apparatus, substrate processing apparatus, and method for processing substrate |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |