CN102854339A - Micro acceleration transducer based on silicon substrate giant magnetoresistance effect - Google Patents
Micro acceleration transducer based on silicon substrate giant magnetoresistance effect Download PDFInfo
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- CN102854339A CN102854339A CN2012103305125A CN201210330512A CN102854339A CN 102854339 A CN102854339 A CN 102854339A CN 2012103305125 A CN2012103305125 A CN 2012103305125A CN 201210330512 A CN201210330512 A CN 201210330512A CN 102854339 A CN102854339 A CN 102854339A
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Abstract
The invention discloses a micro acceleration transducer based on a silicon substrate giant magnetoresistance effect, which mainly comprises a bonding substrate, an iron magnetic membrane and an acceleration sensitive body, wherein the iron magnetic membrane is arranged in a rectangular groove (that is, a bottom groove) in the bonding substrate; the acceleration sensitive body is arranged above the bonding substrate and is connected with the bonding substrate; and the acceleration sensitive body comprises a sensitive mass correspondingly arranged above the bottom groove, a giant magnetic-sensing resistor arranged on the upper surface of the sensitive mass and corresponding to the iron magnetic membrane in position, a cantilever arranged around the sensitive mass, and a support frame body arranged on the outer side of the cantilever. The giant magnetic-sensing resistor layer vibrates in the direction perpendicular to the upper surface of the iron magnetic membrane and along with the sensitive mass. The micro acceleration transducer adopts an integral structure design, is reasonable in structure, simple in detection circuit, convenient to use, good in reliability, and suitable for miniaturization.
Description
Technical field
The present invention relates to micro-inertial navigation technology association area, in particular to a kind of micro-machine acceleration transducer based on giant magnetoresistance effect.
Background technology
At present, the detection mode that micro-machine acceleration transducer is commonly used is pressure resistance type, condenser type, piezoelectric type and tunnel effect type etc., pressure resistance type is based on highly doped silicon piezoresistive effects principle and realizes, the pressure-sensitive device that highly doped silicon forms has stronger dependence to temperature, and it also can cause sensitivity drift because of temperature variation by the electric bridge testing circuit that pressure-sensitive device forms; The raising of condenser type precision is to utilize to increase capacity area, because the microminaturization of device, its precision is difficult to improve because of dwindling of effective capacitance area.Piezoelectric effect is received the sensitivity of sensor and is easily drifted about, and needs often to proofread and correct, and it is slow to make zero, unsuitable follow-on test.Tunnel effect is received sensor, and manufacturing process is complicated, and testing circuit also relative difficult realizes that yield rate is low, is unfavorable for integrated.
Micro-machine acceleration transducer is changed by pick-up unit realizable force electricity the measurement of angular velocity and is finished, its sensitivity, resolution are very important, because acceleration transducer is microminiaturized and integrated, the sensitizing range of detecting reduces thereupon, so make the indexs such as sensitivity, resolution of detection reach the ultimate limit state that the sensitizing range is detected, thereby limited the further raising of acceleration transducer accuracy of detection, be difficult to satisfy the needs of modern military, civilian equipment.
Summary of the invention
The present invention is intended to solve at least one of technical matters that exists in the prior art.
In view of this, the present invention need to provide micro-machine acceleration transducer, and this micro-machine acceleration transducer is the micro-machine acceleration transducer based on giant magnetoresistance effect, can improve at least the accuracy of detection of micro-machine acceleration transducer.
The invention provides a kind of micro-machine acceleration transducer, comprising: the bonding substrate; Ferromagnetic thin film, ferromagnetic thin film are located at the center of bonding substrate kerve.Acceleration sensitive body, described acceleration sensitive body are located at described bonding substrate top and are connected with the bonding substrate, and the acceleration sensitive body comprises: sensitive-mass piece, correspondence are located at the kerve top; Huge mistor is located at sensitive-mass piece upper surface, and as sensing unit, and huge mistor is corresponding with the ferromagnetic thin film position; Support frame is connected with the sensitive-mass piece by semi-girder, and the sensitive-mass piece is played a supporting role.Huge mistor layer can be with the sensitive-mass piece along the direction vibration perpendicular to described ferromagnetic thin film upper surface.
According to the micro-machine acceleration transducer of the embodiment of the invention, adopt overall construction design, reasonable in design is fit to the microminiaturization of device.Sensitive-mass piece upper surface is provided with huge mistor, and it is right against the ferromagnetic thin film that respective regions is made in the bonding substrate upper base groove.Acute variation can occur in the resistance of huge mistor under faint changes of magnetic field, and this variation can improve 1-2 the order of magnitude with the sensitivity of micro-machine acceleration transducer.Another characteristics of the design: because ferromagnetic thin film effect herein is to provide stable non-uniform magnetic-field for huge mistor, therefore, in ferromagnetic thin film generation magnetic field poor effect or stable uppity situation, can consider to utilize external permanent magnet that ferromagnetic thin film is replaced.Except above characteristics, the measurement circuit design of this acceleration sensitive body is simple, easy to use, good reliability, is fit to microminiaturized.
According to one embodiment of present invention, described bonding substrate is square structure, and the center of bonding upper surface of base plate is provided with the kerve for the motion of sensitive-mass piece.
According to one embodiment of present invention, the multi-layered magnetic material nano membrane structure of described ferromagnetic thin film on the semiconductive material substrate layer, arranging successively.
According to one embodiment of present invention, described acceleration sensitive body further comprises: sensitive-mass piece, correspondence are located at the top of bonding substrate kerve; Huge mistor is located at sensitive-mass piece upper surface, and as sensing unit, and huge mistor is corresponding with the ferromagnetic thin film position; Support frame is connected with the sensitive-mass piece by semi-girder, and the sensitive-mass piece is played a supporting role.
According to one embodiment of present invention, described sensitive-mass piece is square, and is embedded in the kerve on the bonding substrate, and can upper and lower motion in this kerve; Be connected with support frame by semi-girder respectively around the described sensitive-mass piece; The upper surface of described sensitive-mass piece is manufactured with two huge mistors, as sensitive mechanism.
According to one embodiment of present invention, described length of cantilever cube structure, with sensitive-mass piece and support frame be an one-piece construction, and its width is much larger than thickness, guarantees that above-below direction rigidity is much larger than horizontal direction.
According to one embodiment of present invention, the huge magnetic-sensitive material nanometer thin rete of described huge mistor on substrate layer, arranging successively.
According to one embodiment of present invention, described huge mistor is located at the upper surface of sensitive-mass piece, is
Shape, two huge mistors intersections are coincide, and draw by huge mistor extension line, are connected with huge mistor electrode through semi-girder.
Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment in conjunction with following accompanying drawing, wherein:
Fig. 1 is the one-piece construction figure of the embodiment of the invention;
Fig. 2 is the integrally-built vertical view of the embodiment of the invention;
Fig. 3 is the three-dimensional structure diagram of the acceleration sensitive body of the embodiment of the invention;
Fig. 4 is the bonding radical slab integral structural drawing of the embodiment of the invention;
Fig. 5 is the bonding substrate vertical view of the embodiment of the invention;
Fig. 6 is the ferromagnetic thin film structural drawing of the embodiment of the invention;
Fig. 7 is the huge mistor structural drawing of the embodiment of the invention;
Shown in the figure, list of numerals is as follows:
1, sensitive-mass piece, 2, huge mistor, 3, huge mistor extension line, 4, huge mistor electrode, 5, ferromagnetic thin film, 6, the bonding substrate, 7, kerve, 8, support frame, 9, semi-girder, 10, substrate, 11, insulation course, 12, the huge magnetic-sensitive material nanometer thin of multilayer rete, 13, acceleration sensitive body, 14, tantalum layer, 15, nifesphere, 16, the copper layer, 17, cobalt layer, 18, ferrimanganic layer, 19, tantalum layer, 20, silicon dioxide layer, 21, titanium dioxide layer, 22, platinum layer, 23, cobalt ferrite layer, 24, the bismuth ferrite layer
Embodiment
The below describes embodiments of the invention in detail, and the example of described embodiment is shown in the drawings, and wherein identical or similar label represents identical or similar element or the element with identical or similar functions from start to finish.Be exemplary below by the embodiment that is described with reference to the drawings, only be used for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, orientation or the position relationship of the indications such as term " " center ", " on ", D score, 'fornt', 'back', " left side ", " right side " be based on orientation shown in the drawings or position relationship; only be for convenience of description the present invention and simplified characterization; rather than the device of indication or hint indication or element must have specific orientation, with specific orientation structure and operation, so can not be interpreted as limitation of the present invention.
In description of the invention, need to prove that unless clear and definite regulation and restriction are arranged in addition, term " links to each other ", " connection " should do broad understanding, for example, can be to be fixedly connected with, and also can be to removably connect, or connect integratedly; Can be mechanical connection, also can be to be electrically connected; Can be directly to link to each other, also can indirectly link to each other by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can concrete condition understand above-mentioned term concrete meaning in the present invention.
Giant magnetoresistance effect is a kind of quantum mechanics and condensed state physics phenomenon, is a kind of of magnetoresistance, can observe in the magnetic material nanometer thin rete structure alternate with nonmagnetic substance.The resistance value of this structural material is relevant with the direction of magnetization of ferrimagnet thin layer, resistance value under the two-layer magnetic material direction of magnetization reverse situation, resistance value when obviously identical greater than direction of magnetization, resistance has very large variable quantity under very weak externally-applied magnetic field.Giant magnetoresistance effect and gyro Coriolis effect are combined, and be applied to the context of detection of micro-machine acceleration transducer, can improve the accuracy of detection of micro-machine acceleration transducer.
The present invention will be further described below in conjunction with accompanying drawing:
Shown in Fig. 1-2, micro-machine acceleration transducer comprises: bonding substrate 6, ferromagnetic thin film 5 and acceleration sensitive body 13 according to an embodiment of the invention.
Particularly, can be take bonding substrate 6 as carrier, for example, bonding substrate 6 can be made by semiconductor material, and bonding substrate 6 centers are provided with the kerve 7 that space is provided for sensitive-mass piece 1; Kerve 7 centers are provided with to provide the ferromagnetic thin film 5 of non-uniform magnetic-field.
Acceleration sensitive body 13 can be located on the bonding substrate 6 and with bonding substrate 6 and be connected, and acceleration sensitive body 13 can comprise: sensitive-mass piece 1, correspondence are located at kerve 7 tops.Sensitive-mass piece 1 upper surface is manufactured with huge mistor 2, and as sensing unit, and huge mistor 2 is corresponding with ferromagnetic thin film 5 positions.Huge mistor 2 can be with sensitive-mass piece 1 along the direction vibration perpendicular to described ferromagnetic thin film 5 upper surfaces.
According to the micro-machine acceleration transducer of the embodiment of the invention, adopt overall construction design, reasonable in design is fit to the microminiaturization of device.Sensitive-mass piece 1 upper surface is manufactured with huge mistor 2, it is right against the ferromagnetic thin film 5 of key and substrate 6 upper surfaces, acute variation can occur in the resistance of huge mistor 2 under faint changes of magnetic field, this variation can improve 1-2 the order of magnitude with the sensitivity of micro-machine acceleration transducer, the measurement circuit design of this device is simple, easy to use, good reliability, is fit to microminiaturized.
As shown in Figure 3, according to one embodiment of present invention, acceleration sensitive body 13 further comprises: sensitive-mass piece 1, huge mistor 2, huge mistor extension line 3, huge mistor electrode 4, support frame 8, semi-girder 9.
Particularly, sensitive-mass piece 1 can be connected four limits of sensitive-mass piece 1 respectively by four semi-girders 9 with support frame 8; Huge mistor 2 is two, can be arranged on the centre position of sensitive-mass piece 1 upper surface, and huge mistor 2 is
Shape, the identical intersection of the two structure are coincide and are distributed, and the whole ferromagnetic thin film layer 5 that is right against the making of bonding substrate 6 upper surfaces; Huge mistor extension line 3 is drawn huge mistor 2, and end is connected with the huge mistor electrode 4 of support frame 8 upper surfaces via semi-girder 9; The width of semi-girder 9 is much larger than its thickness, to guarantee that the rigidity of semi-girder on Z-direction much smaller than the rigidity in X, Y-direction, reduces horizontal interference.
Shown in Fig. 4-5, according to one embodiment of present invention, bonding substrate 6 is square, and upper surface is provided with the kerve 7 for the motion of sensitive-mass piece; The center of kerve 7 is provided with the ferromagnetic thin film 5 that non-uniform magnetic-field is provided; The size of ferromagnetic thin film, shape, thickness can be decided according to power and the distribution needs situation of 2 pairs of magnetic field intensitys of huge mistor of acceleration sensitive body.
As shown in Figure 6, according to one embodiment of present invention, huge mistor 2 is included in the upper surface of semiconductive material substrate layer 10(sensitive-mass piece 1) on insulation course 11 and the huge magnetic-sensitive material nanometer thin of the multilayer rete 12 of arranging successively.Preferably, insulation course 11 can be made of earth silicon material, and the huge magnetic-sensitive material nanometer thin of multilayer rete 12 can be included in tantalum layer 14, nifesphere 15, copper layer 16, cobalt layer 17, ferrimanganic layer 18 and the tantalum layer 19 of arranging successively on insulation course 11.Need to prove, above-mentioned huge mistor 2 can adopt by molecular beam epitaxy and design and produce, molecular beam epitaxy be a kind of on semiconductor wafer the crystal film of growing high-quality, under vacuum condition, by crystal structure arrangement being grown on the semiconductive material substrate layer 10 in layer, and formation nano thick film, successively deposit, in deposition process, the quality, the thickness that need strict control film forming are with the quality of avoiding film forming and accuracy of detection and the sensitivity of thickness effect micro-machine acceleration transducer.
In addition, according to one embodiment of present invention, ferromagnetic thin film layer 5 can be sandwich construction.Thus, can be used with huge mistor 2 better.Preferably, ferromagnetic thin film layer 5 can be included in silicon dioxide layer 20, titanium dioxide layer 21, platinum layer 22, cobalt ferrite layer 23 and the bismuth ferrite layer 24 that the upper surface of bonding substrate 6 is arranged successively.Need to prove, above-mentioned ferromagnetic thin film layer 5 can adopt and design and produce by molecular beam epitaxy, molecular beam epitaxy be a kind of on semiconductor wafer the crystal film of growing high-quality, under vacuum condition, be grown in layer by layer on the bonding substrate 6 by crystal structure arrangement, and formation nano thick film, successively deposit, in deposition process, the quality, the thickness that need strict control film forming are with the quality of avoiding film forming and accuracy of detection and the sensitivity of thickness effect micro-machine acceleration transducer.In addition, because ferromagnetic thin film 5 effects herein are to provide stable non-uniform magnetic-field for huge mistor 2, therefore, in ferromagnetic thin film 5 generation magnetic field poor effect or stable uppity situation, can consider to utilize external permanent magnet that ferromagnetic thin film 5 is replaced.
When acceleration transducer when Z-direction has acceleration, sensitive-mass piece 1 can depart from the equilibrium position under inertia effect, vibrate along Z-direction.Because spacing changes, the intensity of huge mistor 2 positions on sensitive-mass piece 1, magnetic field that produced by the ferromagnetic thin film layer 5 of bonding substrate 6 upper surfaces can increase or reduce.The variation of magnetic field intensity causes that giant magnetoresistance effect makes the resistance of huge mistor 2 that violent variation occur.So just can be converted into a stronger electrical signal to a faint acceleration signal, by just can detect the size of Z-direction input acceleration to the processing of this signal.
In the description of this instructions, the description of reference term " embodiment ", " some embodiment ", " illustrative examples ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or the example in conjunction with specific features, structure, material or the characteristics of this embodiment or example description.In this manual, the schematic statement of above-mentioned term not necessarily referred to identical embodiment or example.And the specific features of description, structure, material or characteristics can be with suitable mode combinations in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that, can carry out multiple variation, modification, replacement and modification to these embodiment in the situation that does not break away from principle of the present invention and aim, scope of the present invention is limited by claim and equivalent thereof.
Claims (10)
1. micro-machine acceleration transducer, its characteristic is, comprising:
The bonding substrate is manufactured with the kerve that the space is provided for the motion of sensitive-mass piece on the bonding substrate;
Ferromagnetic thin film, ferromagnetic thin film are established the center of bonding substrate kerve;
Acceleration sensitive body, described acceleration sensitive body are located at described bonding substrate top, and firm with the bonding substrate bonding, and the acceleration sensitive body comprises: sensitive-mass piece, correspondence are located at the kerve top; Huge mistor be located at sensitive-mass piece upper surface, and huge mistor is corresponding with the ferromagnetic thin film position; Support frame is connected with the sensitive-mass piece by semi-girder, and the sensitive-mass piece is played a supportive role, and huge mistor can be with the sensitive-mass piece along the direction vibration perpendicular to described ferromagnetic thin film upper surface.
2. micro-machine acceleration transducer according to claim 1 is characterized in that, described pad framework is the rectangular hollow framework; Below the pad framework with bonding substrate key be connected and jointly form kerve.
3. micro-machine acceleration transducer according to claim 1 is characterized in that, described ferromagnetic thin film is sandwich construction.
4. micro-machine acceleration transducer according to claim 3 is characterized in that, the ferromagnetic thin film layer is included in silicon dioxide layer, titanium dioxide layer, platinum layer, cobalt ferrite layer and the bismuth ferrite layer that the upper surface of bonding substrate is arranged successively.
5. micro-machine acceleration transducer according to claim 1 is characterized in that,
The sensitive-mass piece, described sensitive-mass piece surface is provided with huge mistor, huge mistor extension line;
Semi-girder, described semi-girder are used for connecting support frame and sensitive-mass piece, and wherein two symmetrical semi-girder upper surfaces of front and back are provided with huge mistor extension line, in order to connect huge mistor and electrode thereof;
Support frame, described support frame are located at bonding substrate top, and firm with the bonding substrate bonding; Simultaneously, support frame is connected with the sensitive-mass piece by semi-girder, and the sensitive-mass piece is played a supporting role; Support frame is manufactured with huge mistor electrode (comprising positive pole and negative pole) with the upper surface that is provided with the semi-girder connecting portion of huge mistor extension line.
6. micro-machine acceleration transducer according to claim 5 is characterized in that, the huge mistor of described sensitive-mass piece upper surface links to each other with huge mistor electrode through semi-girder by huge mistor extension line; Be connected with the semi-girder upper surface at position of support frame is provided with the anodal and huge mistor negative pole of huge mistor.
7. micro-machine acceleration transducer according to claim 5 is characterized in that, described sensitive-mass piece is square, and be embedded in the kerve of bonding substrate, and can upper and lower motion in this kerve; Described sensitive-mass piece front, rear, left and right symmetric position is connected with support frame by semi-girder respectively.
8. micro-machine acceleration transducer according to claim 5, it is characterized in that, described huge mistor refers to utilize multi-layer film structure to make the resistive layer with giant magnetoresistance effect, is included in insulation course and the huge magnetic-sensitive material nanometer thin of the multilayer rete of arranging successively on the semiconductive material substrate layer.
9. micro-machine acceleration transducer according to claim 8 is characterized in that, huge magnetic-sensitive material nanometer thin rete is included in tantalum layer, nifesphere, copper layer, cobalt layer, ferrimanganic layer and the tantalum layer of arranging successively on the insulation course.
10. micro-machine acceleration transducer according to claim 5 is characterized in that, semi-girder Thickness Ratio sensitive-mass piece thin thickness, and reduce horizontal interference much smaller than the width of semi-girder with this.
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| CN105180914A (en) * | 2015-10-21 | 2015-12-23 | 中北大学 | In-plane detection micromechanical gyroscope with high-Q-value tunnel magnetoresistive effect |
| CN106199687A (en) * | 2016-06-27 | 2016-12-07 | 吉林大学 | Simple component geophone |
| CN106338618A (en) * | 2016-11-22 | 2017-01-18 | 三峡大学 | Giant-magnetoresistance-effect-based single-axis MEMS accelerometer |
| CN106443069A (en) * | 2016-11-22 | 2017-02-22 | 三峡大学 | Anisotropic-magnetoresistance-effect-based differential single-shaft MEMS accelerometer |
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| CN105180914A (en) * | 2015-10-21 | 2015-12-23 | 中北大学 | In-plane detection micromechanical gyroscope with high-Q-value tunnel magnetoresistive effect |
| CN106199687A (en) * | 2016-06-27 | 2016-12-07 | 吉林大学 | Simple component geophone |
| CN106501547A (en) * | 2016-11-22 | 2017-03-15 | 三峡大学 | A kind of differential type single shaft mems accelerometer based on giant magnetoresistance effect |
| CN106443069A (en) * | 2016-11-22 | 2017-02-22 | 三峡大学 | Anisotropic-magnetoresistance-effect-based differential single-shaft MEMS accelerometer |
| CN106706959A (en) * | 2016-11-22 | 2017-05-24 | 三峡大学 | Single-axis MEMS accelerometer based on anisotropy magnetoresistance effect |
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| CN107131819B (en) * | 2017-06-12 | 2023-02-24 | 中北大学 | Single-axis micro-mechanical displacement sensor based on tunnel magnetoresistance effect |
| CN107131819A (en) * | 2017-06-12 | 2017-09-05 | 中北大学 | Single shaft micromechanics displacement transducer based on tunnel magneto-resistance effect |
| CN107356249A (en) * | 2017-08-15 | 2017-11-17 | 中北大学 | A kind of micro- inertia component of tunnel magnetoresistive detection |
| CN108828265A (en) * | 2018-07-25 | 2018-11-16 | 中国工程物理研究院电子工程研究所 | A kind of capacitance type micro mechanical acceleration transducer |
| CN108828265B (en) * | 2018-07-25 | 2024-05-07 | 中国工程物理研究院电子工程研究所 | Capacitive micromechanical acceleration sensor |
| CN109142786A (en) * | 2018-09-29 | 2019-01-04 | 东南大学 | A kind of tunnel magnetoresistive based on torsional pendulum type structure declines accelerometer device |
| CN109142786B (en) * | 2018-09-29 | 2020-11-03 | 东南大学 | Tunnel magnetoresistance type micro accelerometer device based on torsional pendulum type structure |
| WO2020200076A1 (en) * | 2019-04-02 | 2020-10-08 | 江苏多维科技有限公司 | Magnetoresistive inertial sensor chip |
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| CN111596345A (en) * | 2020-06-17 | 2020-08-28 | 防灾科技学院 | Optical fiber acceleration sensor for earthquake monitoring and preparation method thereof |
| CN111596345B (en) * | 2020-06-17 | 2023-12-29 | 防灾科技学院 | Optical fiber acceleration sensor for earthquake monitoring and preparation method thereof |
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Application publication date: 20130102 |