CN102832303A - Preparation method of gallium nitride substrate high brightness light emitting diode - Google Patents
Preparation method of gallium nitride substrate high brightness light emitting diode Download PDFInfo
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- CN102832303A CN102832303A CN2012103249712A CN201210324971A CN102832303A CN 102832303 A CN102832303 A CN 102832303A CN 2012103249712 A CN2012103249712 A CN 2012103249712A CN 201210324971 A CN201210324971 A CN 201210324971A CN 102832303 A CN102832303 A CN 102832303A
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Abstract
The invention provides a method for manufacturing a high brightness light emitting diode by adopting the combination of invisible cutting and side wall etching technologies. The advantages of the invisible cutting and side wall etching are utilized effectively, the problem that byproducts such as burn marks left by a laser positive stroke process to a transverse side wall of a GaN chip and the like are hard to clean is overcome, the light emitting efficiency of the side wall of the light emitting diode is improved, and furthermore both the longitudinal and transverse side walls of the light emitting diode are provided with through periodical distributed hole structures, and the light emitting brightness of the chip is increased, the electric leakage reject ratio is reduced, and the cleavage yield is increased to a larger extent.
Description
Technical field
The present invention relates to a kind of manufacture method of gallium nitride-based high-brightness light-emitting diode, especially relate to a kind of manufacture method with gallium nitride-based high-brightness light-emitting diode that stealthy cutting and sidewall etch combine.
Background technology
At present, be fit to the III-V group iii v compound semiconductor material that commercial blue green light LED all is based on GaN.Because the P-GaN layer hole concentration of GaN base LED epitaxial wafer is little, and the P-GaN layer thickness is thinner, mostly appear from the P-GaN layer when luminous.And the P-GaN layer has absorption to light inevitably, causes the led chip external quantum efficiency not high, greatly reduces the luminous efficiency of LED.Adopt indium tin oxide layer higher as the transmissivity of current extending, but cause LED voltage higher, the life-span also is affected.In addition, under applied voltage, owing to exist the electric current diffusion inhomogeneous, some regional current densities are very big, influence the LED life-span.In a word, quantum efficiency aspect externally, existing GaN base LED still seems not enough, and is relevant with the electric current non-uniform Distribution on the one hand, then is on the other hand and is emitted to electrode when light and can absorbed relevant by electrode itself.For this reason, the research that improves the LED luminous efficiency is comparatively active, major technique have adopt that surface (interface) coarsening technique, growth cloth Bragg reflection (DBR) structure, transparent substrates technology, substrate desquamation are technological, flip chip technology (fct) and special-shaped chip technology.Wherein surface (interface) alligatoring is one of simple and effective way comparatively, such as patterned substrate, epitaxial surface alligatoring, transparency conducting layer alligatoring, photonic crystal etc. to the coarsening technique of exiting surface or substrate by extensive employing and obtain positive effect.
At present, C-Plane (crystal face (0001)) sapphire substrate is the sapphire substrate that generally uses, and adopting wet etching process that the sidewall of sapphire substrate or epitaxial loayer is carried out roughed interface and changes light-emitting diode overall dimension is conventional means.But;, does LED laser after just drawing in the sidewall wet etching course; Tend to occur because the sidewall that is parallel to the flat edge direction (crystal orientation [10-10] or [1010]) of sapphire of LED is different perpendicular to the corrosion rate of flat edge direction (crystal orientation [1-210] or [12-10]); Cause etching process time, temperature control to be difficult to hold, lower than weak point or temperature like etching time, the sidewall that is parallel to edge direction easily often corrodes not enough phenomenon; Accessory substances such as the burning trace that laser is staying after just drawing, chip are difficult for cleaning up, and then influence light extraction efficiency, reduction electric leakage fraction defective; Higher than length or temperature like etching time, easy appearance is often corroded excessive perpendicular to the sidewall of putting down edge direction, influences the stability of technology controlling and process.
Application number is that 200810042186.1 Chinese patent discloses a kind of method for manufacturing LED chip; Before doing the common process of chip; Adopt mask technique; Be etched to Sapphire Substrate or be carved into 5 ~ 50 microns of Sapphire Substrate with laserscribing, ICP technology or RIE technology aisle, use the dense KOH solution of KOH or the heating of phosphoric acid (temperature is the 100-220 degree), fusion that the sidewall of chip and the N-GaN that is exposed to sidewall are carried out wet etching again, make chip form the inclination angle less than the sidewall of 90 degree or chip sidewall bottom is partly broken away from Sapphire Substrate chip; Form inwardly unsettled 3 ~ 40 microns of sidewalls; Adopt SC-2 solution and organic solution to clean epitaxial wafer, carry out ICP or RIE again and be etched to N-GaN, do common process at last.But; This invention to light-emitting diode chip for backlight unit no matter be the sidewall that is parallel to edge direction; Also be perpendicular to and do corrosion after the sidewall of putting down edge direction all adopts laserscribing; Occur sidewall that light-emitting diode chip for backlight unit is parallel to edge direction easily and clean untotally, optical efficiency, electric leakage fraction defective and splitting yield are got in influence.
Summary of the invention
Technical problem to be solved by this invention is the deficiency that overcomes prior art, and a kind of combine method of making high brightness LED of stealthy cutting and sidewall etch technique that adopts is provided.The present invention can give full play to the advantage of stealthy cutting and sidewall etch technique, increases the sidewall bright dipping of light-emitting diode effectively, is lifted out optical efficiency, reduces the electric leakage fraction defective, improves the splitting yield.
A kind of manufacture method of gallium nitride-based high-brightness light-emitting diode is characterized in that: making step is following:
(1) Sapphire Substrate is provided, the luminous epitaxial loayer of growing above that;
(2) growth protecting layer on said epitaxial loayer constitutes the LED wafer;
(3) on the direction of said front wafer surface, form longitudinal channel, make the LED wafer expose longitudinal side wall perpendicular to flat limit;
(4) on the direction that intersects with said longitudinal channel, adopt stealthy cutting to penetrate and mark lateral channel, make the LED lateral sidewalls obtain a series of pore space structures that do not connect from the front;
(5) adopt wet etching that above-mentioned longitudinal side wall and lateral sidewalls are corroded; Make LED wafer longitudinal side wall obtain the pore space structure of a series of perforations; Because solution mobile runs through effect, be the pore space structure of perforation after the pore space structure corrosion that said lateral sidewalls does not connect;
(6) remove protective layer;
(7) on epi-layer surface, make transparency conducting layer and P, N electrode;
(8), get a plurality of LED core grains through grinding, splitting technology.
Innovation part of the present invention is: combine stealthy cutting and sidewall etch technique to make high brightness LED.Because common process adopts laser just to draw, can produce accessory substances such as burning trace, and to be difficult to thoroughly clean up phenomenon particularly serious being parallel to the edge direction upper side wall; So the present invention adopts the stealth cutting replacement with white drying processing feature; Can reduce production of by-products, help obtaining clean sidewall surfaces, the light of avoiding or reduce luminescent layer to send is absorbed by accessory substance; Further, can also form the pore space structure that does not periodically connect.Further; When longitudinal side wall being corroded through acid solution or alkaline solution; Solution flows from longitudinal channel toward lateral channel, and the pore space structure that makes lateral sidewalls periodicity not connect is etched back expansion and connects and links to each other, and then acquisition is vertical, horizontal sidewall all has the periodic distribution pore space structure that runs through; Help the sidewall bright dipping like this, can promote luminous efficiency, reduction electric leakage fraction defective, the raising splitting yield of light-emitting diode to a greater extent.
According to the present invention, preferably, said luminous epitaxial loayer comprises N-GaN layer, luminescent layer and P-GaN layer.
According to the present invention, preferably, said Sapphire Substrate is a patterned substrate.
According to the present invention, preferably, said protective layer material is SiO
2Or SiNx or TiO
2One of or aforesaid combination in any.
According to the present invention, preferably, the degree of depth of said longitudinal channel is greater than the degree of depth of lateral channel.
According to the present invention, preferably, the degree of depth of said longitudinal channel is 5 ~ 50 microns.
According to the present invention, preferably, the degree of depth of said lateral channel is 5 ~ 20 microns.
According to the present invention, preferably, adopt phosphoric acid and sulfuric acid mixed solution wet etching longitudinal side wall and lateral sidewalls in the step 5).
According to the present invention, preferably, the temperature of said phosphoric acid and sulfuric acid mixed solution is greater than or equal to 100 ℃.
According to the present invention, preferably, said wet etching adopts potassium hydroxide or NaOH or one of ammoniacal liquor alkaline solution or aforesaid combination in any.
Root is according to the present invention, and preferably, the time of said wet etching is 5 ~ 20 minutes.
Compared with prior art; Beneficial effect of the present invention is: it has effectively utilized the advantage of stealthy cutting and sidewall etch; Increased the light extraction efficiency of light-emitting diode sidewall; Overcome laser simultaneously and just drawn the problem that difficulty is cleaned in accessory substance corrosion such as burning trace that technology stays GaN chip lateral sidewalls, chip; Further, light-emitting diode is vertical, horizontal sidewall all obtains the periodic distribution pore space structure that runs through, promoted to a greater degree chip luminosity, improve the light-emitting diode yield.
Description of drawings
Accompanying drawing is used to provide further understanding of the present invention, and constitutes the part of specification, is used to explain the present invention with the embodiment of the invention, is not construed as limiting the invention.In addition, the accompanying drawing data are to describe summary, are not to draw in proportion.
Fig. 1 ~ 11st, the embodiment of the invention prepare the flow process constructed profile that sidewall has the gallium nitride-based high-brightness light-emitting diode of perforated holes.
Each label is represented among the figure:
101: the graphic sapphire substrate
The 102:N-GaN layer
103: luminescent layer
The 104:P-GaN layer
105: protective layer
106: longitudinal channel
107: lateral channel
108: the lateral sidewalls hole
109: the longitudinal side wall hole
110: transparency conducting layer
The 111:P electrode
The 112:N electrode.
Embodiment
Below in conjunction with embodiment the present invention is done further description.
A kind of manufacture method of gallium nitride light-emitting diode, its making step comprises:
Shown in Fig. 1, on graphic sapphire substrate 101, adopt metal organic chemical vapor deposition (MOCVD) epitaxial growth successively: N-GaN layer 102, luminescent layer 103 and P-GaN layer 104, epitaxy layer thickness are 10 microns.
Shown in Fig. 2, in epi-layer surface, promptly growth SiO is gone up on P-GaN layer 104 surface
2 Protective layer 105 constitutes the LED wafer, wherein SiO
2The thickness of protective layer is 230 nanometers, protection epi-layer surface when being used for wet etching.Because condition is comparatively harsh during corrosion, SiO
2Guarantee to have reasonable adhesiveness and compactness, so this layer SiO
2Membrance casting condition needs higher temperature (300 ℃) to guarantee to have quality of forming film preferably.
Shown in Fig. 3 and 4, on the direction perpendicular to flat limit on the LED wafer, promptly on the B direction of principal axis, adopt laser down to mark longitudinal channel 106 from the LED front wafer surface, make the LED wafer expose longitudinal side wall, the degree of depth of longitudinal channel is 30 microns.
Shown in Fig. 3 and 5; Be parallel on the LED wafer on the direction on limit; Be on the A direction of principal axis, adopt stealthy cutting to penetrate and mark lateral channel 107, because stealthy cutting is that translucent laser beam is focused on longitudinal side wall inside from the front; So that the LED lateral sidewalls obtains the pore space structure 108 that periodically do not connect, the degree of depth of lateral channel is 8 microns.
Shown in Fig. 6 and 7; Adopt wet etching process, the longitudinal side wall and the lateral sidewalls of LED wafer are carried out, etching solution is selected 250 ℃ sulfuric acid and phosphoric acid (ratio is 3:2) for use; Etching time is 12 minutes; Make the epitaxial loayer longitudinal side wall obtain the pore space structure 109 that periodically connects, run through effect, can be the periodically pore space structure 108 of perforation after the pore space structure corrosion that lateral sidewalls does not periodically connect because etchant solution flows from longitudinal channel 106 past lateral channel 107.
As shown in Figure 8, remove SiO
2Behind the protective layer 105, clean the LED wafer.
As shown in Figure 9, in epi-layer surface, promptly make ITO transparency conducting layer 110 on the P-GaN layer 104.
Shown in Figure 10 and 11,, be distributed on the N-GaN layer 102 of ITO transparency conducting layer 110 and exposure and make P and N electrode through light shield, etch process; Through grinding, splitting technology, get LED core grains, wherein Figure 10 is the front section view of LED core grains, Figure 11 is the side sectional view of LED core grains.
After accomplishing above-mentioned steps; Can obtain the gallium nitride-based high-brightness light-emitting diode that sidewall shown in Figure 10 and 11 has perforated holes; Than the luminescence chip that only adopts stealthy cutting or sidewall corrosion, owing to combine both advantages, and obtained more outstanding technique effect; The optical efficiency of getting that is luminescence chip is further promoted, and the product yield also has much improvement.
Should be understood that above-mentioned specific embodiments is the preferred embodiments of the present invention, scope of the present invention is not limited to this embodiment, and is all according to any change that the present invention did, and all belongs within protection scope of the present invention.
Claims (10)
1. the manufacture method of a gallium nitride-based high-brightness light-emitting diode, it is characterized in that: making step is following:
Growth substrates is provided, the luminous epitaxial loayer of growing above that;
Growth protecting layer on said epitaxial loayer constitutes the LED wafer;
On the direction of said front wafer surface, form longitudinal channel, make the LED wafer expose longitudinal side wall perpendicular to the flat limit of substrate;
On the direction that intersects with said longitudinal channel, adopt stealthy cutting to penetrate and mark lateral channel from the front, make the LED lateral sidewalls obtain a series of pore space structures that do not connect;
Adopt wet etching that above-mentioned longitudinal side wall and lateral sidewalls are corroded; Make LED wafer longitudinal side wall obtain the pore space structure of a series of perforations; Because solution mobile runs through effect, be the pore space structure of perforation after the pore space structure corrosion that said lateral sidewalls does not connect;
Remove protective layer;
On epi-layer surface, make transparency conducting layer and P, N electrode;
Through grinding, splitting technology, get a plurality of LED core grains.
2. according to the manufacture method of right 1 described a kind of gallium nitride-based high-brightness light-emitting diode, it is characterized in that: said growth substrates is the graphic sapphire substrate.
3. according to the manufacture method of right 1 described a kind of gallium nitride-based high-brightness light-emitting diode, it is characterized in that: said protective layer material is SiO
2Or SiNx or TiO
2One of or aforesaid combination in any.
4. according to the manufacture method of right 1 described a kind of gallium nitride-based high-brightness light-emitting diode, it is characterized in that: the degree of depth of said longitudinal channel is greater than the degree of depth of lateral channel.
5. according to the manufacture method of right 1 described a kind of gallium nitride-based high-brightness light-emitting diode, it is characterized in that: the degree of depth of said longitudinal channel is 5 ~ 50 microns.
6. according to the manufacture method of right 1 described a kind of gallium nitride-based high-brightness light-emitting diode, it is characterized in that: the degree of depth of said lateral channel is 5 ~ 20 microns.
7. according to the manufacture method of right 1 described a kind of gallium nitride-based high-brightness light-emitting diode, it is characterized in that: adopt phosphoric acid and sulfuric acid mixed solution wet etching longitudinal side wall and lateral sidewalls in the step 5).
8. according to the manufacture method of right 6 described a kind of gallium nitride-based high-brightness light-emitting diodes, it is characterized in that: the temperature of said phosphoric acid and sulfuric acid mixed solution is greater than or equal to 100 ℃.
9. according to the manufacture method of right 1 described a kind of gallium nitride-based high-brightness light-emitting diode, it is characterized in that: said wet etching adopts potassium hydroxide or NaOH or one of ammoniacal liquor alkaline solution or aforesaid combination in any.
10. according to the manufacture method of right 1 described a kind of gallium nitride-based high-brightness light-emitting diode, it is characterized in that: the time of said wet etching is 5 ~ 20 minutes.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103612015A (en) * | 2013-05-20 | 2014-03-05 | 湘能华磊光电股份有限公司 | LED wafer cutting method |
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| CN101931039A (en) * | 2010-08-23 | 2010-12-29 | 厦门市三安光电科技有限公司 | Gallium nitride based light emitting diode with double-layer staggered perforated holes and manufacturing process thereof |
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| US5756370A (en) * | 1996-02-08 | 1998-05-26 | Micron Technology, Inc. | Compliant contact system with alignment structure for testing unpackaged semiconductor dice |
| JP2004296912A (en) * | 2003-03-27 | 2004-10-21 | Kyocera Corp | Wafer supporting substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103612015A (en) * | 2013-05-20 | 2014-03-05 | 湘能华磊光电股份有限公司 | LED wafer cutting method |
| CN103612015B (en) * | 2013-05-20 | 2015-12-23 | 湘能华磊光电股份有限公司 | A kind of LED wafer cutting method |
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