CN102832275A - Thin-film solar cell and manufacturing method thereof - Google Patents
Thin-film solar cell and manufacturing method thereof Download PDFInfo
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- CN102832275A CN102832275A CN201210325917XA CN201210325917A CN102832275A CN 102832275 A CN102832275 A CN 102832275A CN 201210325917X A CN201210325917X A CN 201210325917XA CN 201210325917 A CN201210325917 A CN 201210325917A CN 102832275 A CN102832275 A CN 102832275A
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Abstract
The invention relates to a thin-film solar cell, and particularly relates to a thin-film solar cell and a manufacturing method of the thin-film solar cell. The cell comprises a baffle layer, a first electrode, a photovoltaic conversion layer and a second electrode which are stacked and impressed on a transparent insulating substrate; and the cell is characterized in that a nano structure with patterns is constructed on an impressing baffle layer between the insulating transparent substrate and the first electrode by using the nano impressing technology. The cell is simple in manufacturing method and low in manufacturing cost; not only is the manufacturing process simple, but also the environment is not polluted; and meanwhile the loss on visible light is reduced, the cell conversion efficiency is increased, and a new idea is provided for the manufacturing of the thin-film substrate solar cell.
Description
Technical field
The present invention relates to solar cell, relate in particular to a kind of thin-film solar cells and preparation method thereof.
Background technology
Nanometer embossing 20th century the nineties proposed first, the processing resolution capability of this technology is only relevant with the size of die plate pattern, and does not receive the physical restriction of the short exposure wavelength of optical lithography.Owing to saved optical lithography mask plate and the cost that uses optical imaging apparatus; The high-resolution characteristics of electron beam lithography technology have been inherited; Kept the advantage that traditional lithographic technique is produced in enormous quantities simultaneously, so nanometer embossing the interest and the attention of various countries scientist and industrial circle have been caused with its high-resolution, high yield, low cost once being born.
Crystal silicon solar energy battery is as first generation solar cell is high with conversion efficiency, manufacture craft is simple, occupied bigger share in the solar cell in early days, but it receives the influence of factors such as raw material scarcity; Second generation thin film based solar cell grows up under this background just, comprises amorphous silicon, microcrystal silicon, CIGS, cadmium telluride and laminate film structure.Be typically silicon-base thin-film battery the most; In order to increase the light absorption of photoelectric conversion layer; Need to construct light trapping structure, normally after the ultra-white float glass surface deposition transparent conductive film of cleaning, utilize the corrosiveness of acid solution at the preceding electrode surface of battery; Form surperficial light trapping structure, finally reach the purpose of antireflective light.But this method needs a large amount of chemical reagent that use, and increases the pollution of environment to a certain extent, also needs accurate controlling reaction time simultaneously, has increased the complexity of manufacturing solar cells.
Summary of the invention
The objective of the invention is to overcome the deficiency of existing solar cell; And a kind of thin-film solar cells and preparation method thereof is provided; Not only manufacture craft is simple, and does not pollute the environment, and has reduced the loss of visible light simultaneously; Improved battery conversion efficiency, for the making of thin film based solar cell provides a kind of new thinking.
Technical scheme of the present invention is achieved in that
A kind of thin-film solar cells; Comprise transparent insulation substrate and stack gradually impression barrier layer, first electrode, photoelectric conversion layer, second electrode on transparent insulation substrate, it is characterized in that: on the impression barrier layer, construct nanostructure with patterning.
Described impression barrier layer is the organic or inorganic film.
Described film is one or more the lamination in polymethyl methacrylate, polystyrene, Merlon, organosilicon material, esters of acrylic acid, epoxy resin, metal, the semiconductor.
Constructing the used technology of nanostructure with patterning is nanometer embossing.
The nanostructure of patterning is grating, cylindricality, taper, dot matrix and hole shape structure.
First electrode layer and the second electrode lay are metal, transparent conductive oxide or its composite construction.
Photoelectric conversion layer is silica-base film layer, cadmium telluride-based thin layer, CIGS base film layer or laminated construction.
A kind of manufacture method of thin-film solar cells, the step of this method is following:
The method of step 1), employing coating or sputter or deposition is coated with the organic or inorganic film on clean ultra-white float glass surface, obtain impressing the barrier layer;
Step 2), will have the glass substrate that impresses the barrier layer and put into impression system together with template, carry out hot padding and handle, finish the back and obtain nanostructure at the impression barrier layer surface;
Step 3), utilize chemical vapour deposition technique or the sputtering technology to be coated with metal or transparent oxide or its compound at the impression barrier layer surface, obtain first electrode, first electrode has still kept the nanostructure on the impression barrier layer;
Step 4), construct the first road cutting, remove the impression barrier layer and first electrode material, and substrate is cleaned, on first electrode, be coated with photoelectric conversion layer then with the laser ablation technology;
Step 5), photoelectric conversion layer is carried out laser ablation or mechanical etching, remove photoelectric conversion layer, form the second road groove that is parallel to the first road cutting;
Step 6), be coated with second electrode, and the battery that has been coated with second electrode is parallel to the delineation of the first road cutting and the second road cutting, remove second electrode and photoelectric conversion layer, thereby form the battery cascaded structure at the opto-electronic conversion laminar surface.
Organic or inorganic film described in the step 1) be one of which or a plurality of laminations in polymethyl methacrylate, polystyrene, Merlon, organosilicon material, esters of acrylic acid, epoxy resin, metal, the semiconductor; Its thickness is 10-300nm, and thickness is greater than the height of impression block characteristic size.
The pressure of the hot padding step 2) is 0.5-3MPa, and the time is 3min, and temperature is 80-300 ℃.
Step 2) nanostructure described in is grating, cylindricality, taper, dot matrix or hole shape structure.
The plating method of photoelectric conversion layer is in the step 4): The pre-heat treatment is carried out in the substrate to after cleaning; Put it into then in the PECVD equipment; Feed the mist of silane, methane, phosphine, borine, hydrogen; Mist generation chemical reaction forms solid matter and covers substrate surface, forms photoelectric conversion layer PIN structure.
The plating method of photoelectric conversion layer is in the step 4): selenizing method deposition CIGS film, chemical bath method deposition cadmium sulfide, sputtering method sputtering zinc oxide after the substrate surface after the cleaning once utilizes sputter, CIGS, cadmium sulfide, zinc oxide composite film form the PN junction of photoelectric conversion layer.
The water temperature of described chemical bath method is 60-80 ℃, and the thickness of cadmium sulphide membrane is 70-100nm; The thickness of zinc-oxide film is 70-100nm.
The material of second electrode described in the step 6) is metal, transparent conductive oxide or its composite construction, and its thickness is 100-400nm.
The invention has the advantages that:
1, a kind of thin-film solar cells of the present invention need not to utilize method electrode surface before battery of acid corrosion to construct light trapping structure; But adopt nanometer embossing on the impression barrier layer, to construct nanostructure with patterning; Simplified the manufacture craft of thin-film solar cells, realized zero of environment is polluted.
2, the visible light loss late 8.5% of conventional films solar cell, the visible light loss late of a kind of thin-film solar cells of the present invention is reduced to 5%, improves more than 2% through photovoltaic module conversion efficiency of the present invention.
Description of drawings
Fig. 1 is the structure chart of thin-film solar cells of the present invention.
Embodiment
Embodiment 1:
As shown in Figure 1; A kind of thin-film solar cells; Comprise transparent insulation substrate 1 and stack gradually impression barrier layer 2 on transparent insulation substrate 1, first electrode 3, photoelectric conversion layer 4, second electrode 5, it is characterized in that: on impression barrier layer 2, construct nanostructure with patterning.
Described impression barrier layer 2 is the organic or inorganic film.
Described film is one or more the lamination in polymethyl methacrylate, polystyrene, Merlon, organosilicon material, esters of acrylic acid, epoxy resin, metal, the semiconductor.
Constructing the used technology of nanostructure with patterning is nanometer embossing.
The nanostructure of patterning is grating, cylindricality, taper, dot matrix and hole shape structure.
The manufacture method of thin-film solar cells is that the step of this method is following:
Step 1), on clean ultra-white float glass, apply impression barrier layer polystyrene, thickness is 10-300nm, and its thickness damages in moulding process to prevent template greater than the height of impression block characteristic size.
Step 2), put into impression system to the glass substrate that is coated with the barrier layer together with the template quartz glass and carry out the hot padding process, impression pressure is 0.5-3MPa, the retention time is 3min, imprint temperature is 80-300 ℃; Finish the back and obtain the columnar arrays structure at polystyrene surface, this structure can reduce the visible light loss, increases the utilance of light, improves the photoelectric properties of battery.
Step 3), the barrier layer surface behind impression utilize chemical vapour deposition technique deposition fluorine-doped tin dioxide, and the fluorine-doped tin dioxide film surface has still kept the columnar arrays structure on the barrier layer.
Step 4), construct the first road cutting, remove polystyrene and fluorine-doped tin dioxide with the P1 laser ablation, substrate clean and preheating after put into PECVD equipment and feed silane, methane, phosphine, borine, hydrogen gas mixture deposition photoelectric conversion layer PIN structure.
Step 5), carry out P2 laser ablation process, remove silicon fiml, form the second road groove of parallel P1 cutting after the substrate cooling.
Step 6), utilize sputtering technology at battery surface deposition back electrode Al-Doped ZnO; Thickness is 50-150nm, and the battery that has plated back electrode is parallel to the P3 laser ablation of P1, P2 cutting, removes back electrode and silicon fiml; Thereby form the battery cascaded structure, skip distance is 300-400 μ m.
Embodiment 2
As shown in Figure 1; A kind of thin-film solar cells; Comprise transparent insulation substrate 1 and stack gradually impression barrier layer 2 on transparent insulation substrate 1, first electrode 3, photoelectric conversion layer 4, second electrode 5, it is characterized in that: on impression barrier layer 2, construct nanostructure with patterning.
Described impression barrier layer 2 is the organic or inorganic film.
Described film is one or more the lamination in polymethyl methacrylate, polystyrene, Merlon, organosilicon material, esters of acrylic acid, epoxy resin, metal, the semiconductor.
Constructing the used technology of nanostructure with patterning is nanometer embossing.
The nanostructure of patterning is grating, cylindricality, taper, dot matrix and hole shape structure.
The manufacture method of thin-film solar cells is that the step of this method is following:
Step 1), on clean ultra-white float glass sputter impression barrier layer zinc oxide, thickness is 10-300nm, its thickness damages in moulding process to prevent template greater than the height of impression block characteristic size.
Step 2), (put into impression system and carry out the hot padding process, impression pressure is 0.5-3MPa, and the retention time is 3min, and imprint temperature is 80-300 ℃ together with the template dimethyl silicone polymer the glass substrate that is coated with the barrier layer; Finish the back and obtain cheating the shape light trapping structure at zinc oxide surface, this structure can reduce the visible light loss, increases the utilance of light, improves the photoelectric properties of battery.
Step 3), the barrier layer surface behind impression utilize sputtering technology deposition Al-Doped ZnO, and the Al-Doped ZnO film surface has still kept the hole shape light trapping structure on the barrier layer.
Step 4), construct the first road cutting, remove zinc oxide and Al-Doped ZnO with the P1 laser ablation, substrate clean and preheating after put into PECVD equipment and feed silane, methane, phosphine, borine, hydrogen gas mixture deposition photoelectric conversion layer PIN structure.
Step 5), P2 laser ablation process is carried out in the substrate after the cooling, remove silicon fiml, form the second road groove of parallel P1 cutting.
Step 6), utilize sputtering technology at battery surface deposition back electrode Al-Doped ZnO and aluminum compound structure; Thickness is respectively 100nm, 200nm; The P3 laser ablation that the battery that has plated back electrode is parallel to P1, P2 cutting; Remove back electrode and silicon fiml, thereby form the battery cascaded structure, skip distance is 300-400 μ m.
As shown in Figure 1; A kind of thin-film solar cells; Comprise transparent insulation substrate 1 and stack gradually impression barrier layer 2 on transparent insulation substrate 1, first electrode 3, photoelectric conversion layer 4, second electrode 5, it is characterized in that: on impression barrier layer 2, construct nanostructure with patterning.
Described impression barrier layer 2 is the organic or inorganic film.
Described film is one or more the lamination in polymethyl methacrylate, polystyrene, Merlon, organosilicon material, esters of acrylic acid, epoxy resin, metal, the semiconductor.
Constructing the used technology of nanostructure with patterning is nanometer embossing.
The nanostructure of patterning is grating, cylindricality, taper, dot matrix and hole shape structure.
The manufacture method of thin-film solar cells is that the step of this method is following:
Step 1), on clean soda-lime glass deposition impression barrier layer molybdenum, thickness is 10-300nm, its thickness damages in moulding process to prevent template greater than the height of impression block characteristic size.
Step 2), put into impression system to the glass substrate that is coated with the barrier layer together with the template diamond and carry out the hot padding process, impression pressure is 0.5-3MPa, the retention time is 3min, imprint temperature is 80-300 ℃; Finish the back and obtain the tapered array structure on the molybdenum surface, this structure can reduce the visible light loss, increases the utilance of light, improves the photoelectric properties of battery.
Step 3), the barrier layer surface behind impression utilize sputtering technology deposit metal electrodes molybdenum, and film surface has still kept the tapered array structure on the barrier layer.
Step 4), construct the first road cutting, remove the combination electrode molybdenum, utilize selenizing method deposition photoelectric conversion layer CIGS film after the sputter after the cleaning with laser ablation, chemical bath method deposition cadmium sulfide, water temperature is 60-80 ℃, thickness is 50-70nm; And sputter thickness is the zinc oxide of 70-100nm, and CIGS, cadmium sulfide, zinc oxide composite film form the PN junction absorbed layer of battery.
Step 5), machinery etch away absorbed layer, thereby form the second road groove of the parallel first road cutting.
Step 6), utilize sputtering technology at battery surface deposition back electrode Al-Doped ZnO; Thickness is 100nm; The battery that has plated back electrode is parallel to the mechanical etching of the first road cutting and the second road cutting, removes back electrode and silicon fiml, thereby form the battery cascaded structure.
Claims (10)
1. thin-film solar cells; Comprise transparent insulation substrate and stack gradually impression barrier layer, first electrode, photoelectric conversion layer, second electrode on transparent insulation substrate, it is characterized in that: on the impression barrier layer, construct nanostructure with patterning.
2. a kind of thin-film solar cells according to claim 1 is characterized in that: described impression barrier layer is the organic or inorganic film.
3. a kind of thin-film solar cells of stating according to claim 2 is characterized in that: described film is one or more the lamination in polymethyl methacrylate, polystyrene, Merlon, organosilicon material, esters of acrylic acid, epoxy resin, metal, the semiconductor.
4. a kind of thin-film solar cells according to claim 1 is characterized in that: constructing the used technology of nanostructure with patterning is nanometer embossing.
5. a kind of thin-film solar cells according to claim 1 is characterized in that: the nanostructure of patterning is grating, cylindricality, taper, dot matrix and hole shape structure.
6. a kind of thin-film solar cells according to claim 1 is characterized in that: first electrode layer and the second electrode lay are metal, transparent conductive oxide or its composite construction.
7. a kind of thin-film solar cells according to claim 1 is characterized in that: photoelectric conversion layer is silica-base film layer, cadmium telluride-based thin layer, CIGS base film layer or laminated construction.
8. the manufacture method of a thin-film solar cells, it is characterized in that: the step of this method is following:
The method of step 1), employing coating or sputter or deposition is coated with the organic or inorganic film on clean ultra-white float glass surface, obtain impressing the barrier layer;
Step 2), will have the glass substrate that impresses the barrier layer and put into impression system together with template, carry out hot padding and handle, finish the back and obtain nanostructure at the impression barrier layer surface;
Step 3), utilize chemical vapour deposition technique or the sputtering technology to be coated with metal or transparent oxide or its compound at the impression barrier layer surface, obtain first electrode, first electrode has still kept the nanostructure on the impression barrier layer;
Step 4), construct the first road cutting, remove the impression barrier layer and first electrode material, and substrate is cleaned, on first electrode, be coated with photoelectric conversion layer then with the laser ablation technology;
Step 5), photoelectric conversion layer is carried out laser ablation or mechanical etching, remove photoelectric conversion layer, form the second road groove that is parallel to the first road cutting;
Step 6), be coated with second electrode, and the battery that has been coated with second electrode is parallel to the delineation of the first road cutting and the second road cutting, remove second electrode and photoelectric conversion layer, thereby form the battery cascaded structure at the opto-electronic conversion laminar surface.
9. the manufacture method of thin-film solar cells according to claim 8; It is characterized in that: the organic or inorganic film described in the step 1) be one of which or a plurality of laminations in the polymethyl methacrylate, polystyrene, Merlon, organosilicon material, esters of acrylic acid, epoxy resin, metal, semiconductor; Its thickness is 10-300nm, and thickness is greater than the height of impression block characteristic size.
10. the manufacture method of thin-film solar cells according to claim 8 is characterized in that: step 2) described in the pressure of hot padding be 0.5-3MPa, the time is 3min, temperature is 80-300 ℃.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104991416A (en) * | 2015-07-23 | 2015-10-21 | 太原理工大学 | Optical disc based dimensional periodic micro-nano structure hot padding method |
| CN110277473A (en) * | 2019-05-31 | 2019-09-24 | 信利半导体有限公司 | A kind of manufacturing method and film photovoltaic cell of film photovoltaic cell |
| CN110311014A (en) * | 2019-07-08 | 2019-10-08 | 绵阳金能移动能源有限公司 | A method of reducing flexible copper indium gallium selenide solar cell series connection resistance |
| CN110767762A (en) * | 2018-07-25 | 2020-02-07 | 北京铂阳顶荣光伏科技有限公司 | Solar cell front plate film, manufacturing method thereof and solar cell |
| CN113644201A (en) * | 2021-08-05 | 2021-11-12 | 电子科技大学 | Organic solar cell based on triangular prism grating imprinting and preparation method thereof |
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| CN101901853A (en) * | 2009-05-26 | 2010-12-01 | 韩国铁钢株式会社 | Integrated thin-film solar cell and manufacture method thereof |
| CN102082212A (en) * | 2010-12-14 | 2011-06-01 | 天津市津能电池科技有限公司 | Production process for amorphous silicon solar cell |
| US20120192933A1 (en) * | 2011-01-27 | 2012-08-02 | Moser Baer India Limited | Light-trapping layer for thin-film silicon solar cells |
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2012
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Patent Citations (3)
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| CN101901853A (en) * | 2009-05-26 | 2010-12-01 | 韩国铁钢株式会社 | Integrated thin-film solar cell and manufacture method thereof |
| CN102082212A (en) * | 2010-12-14 | 2011-06-01 | 天津市津能电池科技有限公司 | Production process for amorphous silicon solar cell |
| US20120192933A1 (en) * | 2011-01-27 | 2012-08-02 | Moser Baer India Limited | Light-trapping layer for thin-film silicon solar cells |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104991416A (en) * | 2015-07-23 | 2015-10-21 | 太原理工大学 | Optical disc based dimensional periodic micro-nano structure hot padding method |
| CN104991416B (en) * | 2015-07-23 | 2021-05-25 | 太原理工大学 | Hot stamping method of two-dimensional periodic micro-nano structure based on optical disk |
| CN110767762A (en) * | 2018-07-25 | 2020-02-07 | 北京铂阳顶荣光伏科技有限公司 | Solar cell front plate film, manufacturing method thereof and solar cell |
| CN110277473A (en) * | 2019-05-31 | 2019-09-24 | 信利半导体有限公司 | A kind of manufacturing method and film photovoltaic cell of film photovoltaic cell |
| CN110277473B (en) * | 2019-05-31 | 2024-03-26 | 信利半导体有限公司 | Manufacturing method of thin-film photovoltaic cell and thin-film photovoltaic cell |
| CN110311014A (en) * | 2019-07-08 | 2019-10-08 | 绵阳金能移动能源有限公司 | A method of reducing flexible copper indium gallium selenide solar cell series connection resistance |
| CN110311014B (en) * | 2019-07-08 | 2020-11-24 | 绵阳金能移动能源有限公司 | Method for reducing series resistance of flexible copper indium gallium selenide solar cell |
| CN113644201A (en) * | 2021-08-05 | 2021-11-12 | 电子科技大学 | Organic solar cell based on triangular prism grating imprinting and preparation method thereof |
| CN113644201B (en) * | 2021-08-05 | 2024-02-09 | 电子科技大学 | Organic solar cell based on triangular prism grating imprinting and preparation method thereof |
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Application publication date: 20121219 |