CN102832257A

CN102832257A - MIM structure device used to test SiNx insulating layer

Info

Publication number: CN102832257A
Application number: CN2011102671365A
Authority: CN
Inventors: 王彬
Original assignee: GUANGDONG ZHONGXIAN TECHNOLOGY Co Ltd
Current assignee: GUANGDONG ZHONGXIAN TECHNOLOGY Co Ltd
Priority date: 2011-06-15
Filing date: 2011-09-09
Publication date: 2012-12-19
Also published as: CN102831850A; CN102832103A; CN102832109A; CN102832131A; CN102832251A; CN202404869U; CN202285237U; CN202487581U; CN102832252A; CN102832130A; CN202307906U

Abstract

The invention provides a MIM (metal insulating-layer metal) structure device used to test a SiNx insulating layer. The MIM structure device comprises a glass pad, lower electrodes, a gate insulating layer, and upper electrodes. The lower electrodes are disposed at an equal interval on an upper part of the glass pad in separated bulks. The gate insulating layer covers the whole lower electrodes and closely contacts with the glass pad. The upper electrodes are disposed at an equal interval on an upper part of the gate insulating layer in separated bulks. The MIM structure device used to test SiNx insulating layer can accurately and rapidly detect the SiNx insulating layer and dielectric properties of the SiNx insulating layer, and provides accurate work basis for a thin film transistor (TFT) and gate insulating layer performance thereof.

Description

A kind of mim structure device that is used to test the SiNx insulating barrier

Technical field

The present invention relates to the semiconductor test field, more specifically, relate to a kind of device of detection SiNx (silicon nitride) insulating barrier.

Background technology

Thin-film transistor (TFT) is meant deposition layer of semiconductor film on substrate, goes out source, drain electrode through fabrication techniques such as photoetching, etchings, and grid and body form, and it is made up of gate insulation layer, active layer, gate electrode, source and drain electrode several sections.

Gate insulation layer need satisfy the requirement of the following aspects as the important component part of TFT as far as TFT: good dielectric voltage withstand performance, high stability and and active layer between form good SiNx such as interfacial characteristics as insulating layer material.With customary insulation material SiO ₂Compare, SiNx is except that having suitable puncture voltage, and SiNx also has the following advantages: 1) relative dielectric constant is high, and the silicon dioxide of PECVD preparation is about 3.9, and the value of silicon nitride film is about 8; 2) silicon nitride is strong to alkali-metal blocking capability, can prevent effectively that alkali metal ion from passing through gate insulation layer and getting into raceway groove; 3) chemical stability of silicon nitride is high, and except hydrofluoric acid and hot phosphoric acid, it reacts with other soda acid hardly; 4) silicon nitride has better waterproof and gas permeation resistance, can effectively reduce the influence that gas and water vapor permeable cause device.

Though SiNx has above-mentioned advantage as insulating barrier, yet also do not have the corresponding characteristic of relevant detection device at present, effectively detect like dielectric property, breakdown electric field etc. to the employed SiNx insulating barrier on the TFT.

Summary of the invention

For overcoming above-mentioned defective of the prior art, the present invention proposes a kind of MIM (metal-insulator-metal) structure devices that is used to test the SiNx insulating barrier.

This mim structure device comprises glass liner, bottom electrode, gate insulation layer, top electrode; This bottom electrode is the block equally spaced top that is positioned at glass liner of separation, and this gate insulation layer covers on the whole bottom electrode, and closely contacts with glass liner, and this top electrode is the block equally spaced top that is positioned at this gate insulation layer of separation.

Mim structure device through test SiNx insulating barrier can detect the SiNx insulating barrier quickly and accurately, and the dielectric property of SiNx insulating barrier, and the foundation of accurate work is provided for the performance of thin-film transistor (TFT) and gate insulation layer thereof.

Description of drawings

Fig. 1 is the process chart of preparation mim structure device;

Fig. 2 is mim structure device architecture figure;

Fig. 3 is the SiNx disruptive field intensity test circuit figure of mim structure.

Embodiment

Below in conjunction with accompanying drawing and specific embodiment a kind of mim structure device that is used to test the SiNx insulating barrier provided by the invention is described in detail.

The preparation flow of this structure is shown in Figure 1:

1) cleaning of glass substrate.Wash the surface of substrate earlier with cleaning fluid, clean with flushing with clean water, then be placed on difference ultrasonic cleaning 30min in acetone, ethanol, the deionized water, this process repeats once.

2) preparation of bottom electrode.Select for use chromium as the bottom electrode metal material, use the method preparation of magnetron sputtering.Technological parameter is as shown in table 1; After metal level completes, utilize photoetching technique, carve corresponding bottom electrode figure, the parameter of gluing, baking, exposure and development (also can adopt reference parameter well known in the art) as shown in table 2 below, what the corrosive liquid of Cr was used is the ammonium ceric nitrate mixed solution.

Table 1 magnetron sputtering prepares the process conditions of film

The technological parameter of table 2 gluing, baking, exposure, photographic parameter gluing

Order	Rotating speed (rpm)	Time (s)
			1 (low speed)	?300	?3
2 (at a high speed)	?1200	?40

The baking process parameter

Baking temperature (℃)	The preceding baking time (s)	The back baking time (s)
			?120	?60	?60

3) make gate insulation layer.The depositing operation of gate insulation layer can go through below; The thickness of film in the time of deposited silicon nitride, is pushed down the lower part of bottom electrode probably at 250nm-300nm with glass bar; Prevent to plate silicon nitride film, make the Cr electrode expose and (can reduce silicon nitride etch technology) outside.

4) make Cr top electrode figure.The mask of upper/lower electrode is identical, and the mask plate of upper/lower electrode rotates 90 °.The technological parameter that wherein prepares top electrode is as shown in table 3, compares with bottom electrode, and sputtering power uses 150W, and main cause is that power is low more, and the Cr atom is light more to the penetration degree of SiNx layer, and the influence that SiNx receives is more little.

Table 3 control sputter prepares the process conditions of top electrode

The mim structure device is as shown in Figure 2, and it comprises glass liner, bottom electrode, gate insulation layer, top electrode; This bottom electrode is the block equally spaced top that is positioned at glass liner of separation, and this gate insulation layer covers on the whole bottom electrode, and closely contacts with glass liner, and this top electrode is the block equally spaced top that is positioned at this gate insulation layer of separation.How right the counter electrode that this explant constitutes is to comprising according to the needs that detect, and as 3 pairs, 4 pairs, 5 pairs or the like, preferred, the explant of upper/lower electrode is corresponding one by one, and simultaneously, upper/lower electrode can adopt the Cr material.

The disruptive field intensity of SiNx insulating barrier adopts Fig. 3 test circuit to test.Through changing the voltage of voltage source; Flowing through loop current can change, and obtains current indication through the PA table, and (being generally the 2-3 one magnitude) pairing voltage was puncture voltage when sharply sudden change took place the electric current of definition PA table; According to formula E=U/d, can obtain disruptive field intensity; The dielectric property of SiNx insulating barrier also are to adopt mim structure to obtain, and measure the electric capacity of insulating barrier through the LCR table, and in this experiment, the frequency of test is 100kHZ.

What should explain at last is; Above embodiment is only in order to describe technical scheme of the present invention rather than the present technique method is limited; The present invention can extend to other modification, variation, application and embodiment on using, and therefore thinks that all such modifications, variation, application, embodiment are in spirit of the present invention and teachings.

Claims

1. mim structure device that is used to test the SiNx insulating barrier, it comprises glass liner, bottom electrode, gate insulation layer, top electrode; It is characterized in that this bottom electrode is the block equally spaced top that is positioned at glass liner of separation, this gate insulation layer covers on the whole bottom electrode, and closely contacts with glass liner, and this top electrode is the block equally spaced top that is positioned at this gate insulation layer of separation.

2. mim structure device according to claim 1 is characterized in that, the explant of upper/lower electrode is corresponding one by one.

3. mim structure device according to claim 1 is characterized in that, upper/lower electrode adopts the Cr material.