CN102832235A - Oxide semiconductor and method for manufacturing same - Google Patents

Oxide semiconductor and method for manufacturing same Download PDF

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CN102832235A
CN102832235A CN2012103428623A CN201210342862A CN102832235A CN 102832235 A CN102832235 A CN 102832235A CN 2012103428623 A CN2012103428623 A CN 2012103428623A CN 201210342862 A CN201210342862 A CN 201210342862A CN 102832235 A CN102832235 A CN 102832235A
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oxide
target
family element
trace doped
doped thing
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兰林锋
肖鹏
彭俊彪
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Guangzhou New Vision Optoelectronic Co., Ltd.
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GUANGZHOU NEW VISION OPTOELECTRONIC CO Ltd
South China University of Technology SCUT
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Priority to PCT/CN2013/083031 priority patent/WO2014040514A1/en
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
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    • H01L21/02518—Deposited layers
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    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/0257—Doping during depositing
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

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Abstract

The embodiment of the invention discloses an oxide semiconductor which can inhibit excessive intrinsic carriers and has high electric stability. The oxide semiconductor disclosed by the embodiment of the invention comprises an AlxInyZnz oxide and a slight amount of dopant; the dopant contains the combination of arbitrary one or more than two of rare earth elements, oxides of rare earth elements, group 4B elements, oxides of group 4B elements, group 5B elements and oxides of group 5B elements.

Description

Oxide semiconductor and manufacturing approach thereof
Technical field
The present invention relates to semiconductor applications, relate in particular to a type oxide semiconductor and a manufacturing approach thereof.
Background technology
As the novel demonstration with wide application prospect---Organic Light Emitting Diode (OLED; Organic Light-Emitting Diode); Having begun in recent years has the product of small-medium size to come into the market; But large scale TV product does not also have industrialization, and large scale OLED must adopt active matrix organic LED panel (AMOLED, Active Matrix/Organic Light Emitting Diode); It comprises 2 parts: thin-film transistor (TFT, Thin Film Transistor) drive part and OLED luminous component.Because OLED is a current drive-type; This requires the active layer of the TFT of driving OLED that the higher carrier mobility is arranged; The electron mobility of traditional non-crystalline silicon tft that is used for driving liquid crystal (LCD, Liquid Crystal Display) is lower, the difficult demand that satisfies OLED.The AMOLED product is mainly used low temperature polycrystalline silicon (LTPS at present; Low Temperature Poly-silicon) TFT drives; But it is being met difficulty aspect large tracts of land crystallization process; And the crystallization process cost is higher, can't break through the expensive bottleneck of AMOLED, therefore presses for the new active material with substituted for silicon material potentiality of research.Based on the oxide semiconductor of zinc oxide (ZnO) with its mobility height, electricity good uniformity, to visible transparent, make the low and low cost and other advantages of temperature and be considered to one of active material that is best suited for driving OLED.
Oxide semiconductor mainly comprises zinc oxide (ZnO), indium zinc oxide (IZO), indium oxide gallium zinc (IGZO) and aluminium oxide indium zinc (AIZO) etc.The subject matter that present these oxide semiconductors face is that threshold voltage is that negative (normally open), the subthreshold value amplitude of oscillation are than big and electrical stability deficiency etc.Wherein, threshold voltage is that negative means that need add a negative voltage could turn-off it, can cause the power consumption of whole TFT panel to increase; The subthreshold value amplitude of oscillation means that more greatly the defective in the semiconductor is more, can influence the reliability and the switching characteristic of device.
Summary of the invention
In view of the above problems; The embodiment of the invention provides a type oxide semiconductor; This type oxide semiconductor comprises trace doped thing; These trace doped things can suppress superfluous intrinsic carrier, and can regulate and control the threshold voltage of TFT device through the size of doping, can reduce the subthreshold value amplitude of oscillation of device simultaneously.
Oxide semiconductor provided by the invention comprises:
Al xIn yZn zOxide and trace doped thing;
Said x, y and z represent Al xIn yZn zAluminium in the oxide (Al), the atomic ratio of indium (In) and zinc (Zn); Wherein, 0.01≤x≤0.2,0.3≤y≤0.7,0.3≤z≤0.7, and x+y+z=1;
Said trace doped thing comprises: rare earth element, the oxide of rare earth element, 4B family element, 4B family element oxide, any one in 5B family element or the 5B family element oxide or two or more combinations.
Optional, described rare earth element is a kind of in lanthanum (La), caesium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), scandium (Sc) and the yttrium (Y); Described 4B family element is a kind of in titanium (Ti), zirconium (Zr) and the hafnium (Hf); Described 5B family element is a kind of in vanadium (V) and the niobium (Nb).
Optional, the amount of said trace doped thing is in 0.01wt.% to 5wt.% scope.
The manufacturing approach of oxide semiconductor provided by the invention comprises:
With trace doped thing, aluminium oxide, four kinds of raw materials of indium oxide and zinc oxide manufacture four targets respectively, and are installed on four different target position sputter simultaneously, control the ratio of said four kinds of raw materials through the sputtering power of regulating different target position, to reach Al xIn yZn zThe target atoms ratio of oxide, and Al xIn yZn zThe target proportion of oxide and trace doped thing;
Or; With aluminium oxide; Three kinds of raw materials of indium oxide and zinc oxide manufacture oxide target material by said target atoms ratio, and said oxide target material and trace doped thing target are installed in sputter simultaneously on two different target position, control said Al through the sputtering power of regulating different target position xIn yZn zThe target proportion of oxide and trace doped thing;
Or with aluminium oxide, any two kinds in three kinds of raw materials of indium oxide and zinc oxide manufacture first target by said target atoms, and remaining a kind of raw material manufactures second target; With first target, second target is installed in sputter simultaneously on three different target position with trace doped thing target, controls said Al through the sputtering power of regulating different target position xIn yZn zThe target proportion of oxide and trace doped thing.
Or, with trace doped thing, aluminium oxide, four kinds of raw materials of indium oxide and zinc oxide are pressed Al xIn yZn zThe target atoms of oxide is Al when xIn yZn zThe target proportion of oxide and trace doped thing is processed target, makes film forming through the mode of sputter;
Said x, y and z represent Al xIn yZn zAl in the oxide, the atomic ratio of In and Zn; Said target atoms ratio is 0.01≤x≤0.2,0.3≤y≤0.7,0.3≤z≤0.7, and x+y+z=1;
Said trace doped thing comprises: rare earth element, the oxide of rare earth element, 4B family element, 4B family element oxide, any one in 5B family element or the 5B family element oxide or two or more combinations.
Optional, described rare earth element is a kind of among La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc and the Y; Described 4B family element is a kind of among Ti, Zr and the Hf; Described 5B family element is a kind of among V and the Nb.
Optional, the amount of said trace doped thing is in 0.01wt.% to 5wt.% scope.
The film thickness of prepared oxide semiconductor is between 10 ~ 100nm.
Preferably, the film thickness of prepared oxide semiconductor is between 20 ~ 50nm.
Can find out from above technical scheme; The embodiment of the invention has the following advantages: oxide semiconductor material provided by the invention is through introducing new low electronegative alloy (rare earth element, the oxide of rare earth element, the 4B family element of having; 4B family element oxide; 5B family element or 5B family element oxide), can suppress superfluous intrinsic carrier, improve electrical stability.
Description of drawings
Fig. 1 be in the embodiment of the invention oxide semiconductor as the structural representation of the channel layer of thin-film transistor.
Embodiment
The embodiment of the invention provides a kind of and has suppressed superfluous intrinsic carrier, and electrical stability high oxide semiconductor.
Oxide semiconductor in the embodiment of the invention comprises:
Al xIn yZn zOxide and trace doped thing;
Said x, y and z represent Al xIn yZn zAluminium in the oxide (Al), the atomic ratio of indium (In) and zinc (Zn); Wherein, 0.01≤x≤0.2,0.3≤y≤0.7,0.3≤z≤0.7, and x+y+z=1;
Said trace doped thing comprises rare earth element, the oxide of rare earth element, 4B family element, 4B family element oxide, any one in 5B family element or the 5B family element oxide or two or more combinations.
In embodiments of the present invention, the shared atomic ratio of In influences the carrier mobility of oxide semiconductor, and the shared atomic ratio of In is high more, and the carrier mobility of oxide semiconductor is just high more; The shared atomic ratio of Al and Zn then determines the carrier concentration and the crystalline characteristics of oxide semiconductor; In practical application; The atomic ratio of Al, In and Zn is in the proportion that the embodiment of the invention disclosed; Can carry out rational allocation to the demand of carrier mobility, carrier concentration and the crystalline characteristics of oxide semiconductor according to reality, not do concrete qualification here.
Oxide semiconductor material provided by the invention is through introducing the new low electronegative alloy (rare earth element that has; The oxide of rare earth element; 4B family element; 4B family element oxide, 5B family element or 5B family element oxide), can suppress superfluous intrinsic carrier, the threshold voltage of regulation and control TFT device, the subthreshold value amplitude of oscillation of reduction TFT device.
Optional, said rare earth element is a kind of among lanthanum La (1.1), caesium Ce (1.1), praseodymium Pr (1.1), neodymium Nd (1.1), promethium Pm (0.9), samarium Sm (1.2), europium Eu (1.2), gadolinium Gd (0.9), terbium Tb (1.2), dysprosium Dy (1.2), holmium Ho (1.2), erbium Er (1.3), thulium Tm (1.0), ytterbium Yb (1.3), lutetium Lu (1.3), scandium Sc (1.3) or the yttrium Y (1.2);
Optional, said 4B family element is a kind of among titanium Ti (1.5), zirconium Zr (1.4) and the hafnium Hf (1.3);
Optional, said 5B family element is a kind of among vanadium V (1.6) and the niobium Nb (1.6).
Wherein, the electronegativity of this element of digitized representation in the above-mentioned chemical element unquote; The electronegativity representative element attracts the ability of valency exoelectron, and electronegativity is low more, attracts the ability of valency exoelectron strong more.The electronegativity of these elements and the electronegativity of oxygen (3.5) are widely different, thereby they can combine to generate the oxide with strong ionic bond with oxygen.Therefore, when in oxide semiconductor, mixing these materials, can improve the adhesion of oxide semiconductor and oxygen, reduce the oxygen room, thereby can suppress the generation of the charge carrier of surplus, the regulation and control threshold voltage, and reduce the subthreshold value amplitude of oscillation.
Optional, the amount of said trace doped thing in 0.01wt.% to 5wt.% scope, i.e. 0.01%≤[the quality ÷ of the trace doped thing (quality+Al of trace doped thing xIn yZn zThe quality of oxide)]≤5%.
The manufacturing approach of oxide semiconductor can be the method for cosputtering in the embodiment of the invention, also can be the method for direct sputter, specifically comprises:
The method of cosputtering:
With trace doped thing, aluminium oxide, four kinds of raw materials of indium oxide and zinc oxide manufacture four targets respectively and are installed on four different target position sputter simultaneously, control the ratio of said four kinds of raw materials through the sputtering power of regulating different target position, to reach Al xIn yZn zThe target atoms ratio of oxide, and Al xIn yZn zThe target proportion of oxide and trace doped thing;
Or; With aluminium oxide; Three kinds of raw materials of indium oxide and zinc oxide manufacture oxide target material by said target atoms ratio, and said oxide target material and trace doped thing target are installed in sputter simultaneously on two different target position, control said Al through the sputtering power of regulating different target position xIn yZn zThe target proportion of oxide and trace doped thing;
Or with aluminium oxide, any two kinds in three kinds of raw materials of indium oxide and zinc oxide manufacture first target by said target atoms, and remaining a kind of raw material manufactures second target; With first target, second target is installed in sputter simultaneously on three different target position with trace doped thing target, controls said Al through the sputtering power of regulating different target position xIn yZn zThe target proportion of oxide and trace doped thing;
Said x, y and z represent Al xIn yZn zAl in the oxide, the atomic ratio of In and Zn; Said target atoms ratio is 0.01≤x≤0.2,0.3≤y≤0.7,0.3≤z≤0.7, and x+y+z=1;
Said trace doped thing comprises rare earth element, the oxide of rare earth element, 4B family element, 4B family element oxide, any one in 5B family element or the 5B family element oxide or two or more combinations.
The film thickness of prepared oxide semiconductor is between 10 ~ 100nm.
Preferably, the film thickness of prepared oxide semiconductor is between 20 ~ 50nm.
The method of direct sputter:
With trace doped thing, aluminium oxide, four kinds of raw materials of indium oxide and zinc oxide are pressed Al xIn yZn zThe target atoms of oxide is Al when xIn yZn zThe target proportion of oxide and trace doped thing is processed target, makes film forming through the mode of sputter;
Said x, y and z represent Al xIn yZn zAl in the oxide, the atomic ratio of In and Zn; Said target atoms ratio is 0.01≤x≤0.2,0.3≤y≤0.7,0.3≤z≤0.7, and x+y+z=1;
Said trace doped thing comprises rare earth element, the oxide of rare earth element, 4B family element, 4B family element oxide, any one in 5B family element or the 5B family element oxide or two or more combinations.
Optional, said rare earth element is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, any one among Sc and the Y; Said B family element is Ti, any one among Zr and the Hf; Said 5B family element is V, any one among Nb and the Ta.
Optional, the amount of said trace doped thing in 0.01wt.% to 5wt.% scope, i.e. 0.01%≤[the quality ÷ of the trace doped thing (quality+Al of trace doped thing xIn yZn zThe quality of oxide)]≤5%.
The film thickness of prepared oxide semiconductor is between 10 ~ 100nm.
Preferably, the film thickness of prepared oxide semiconductor is between 20 ~ 50nm.
For the ease of understanding, with concrete application scenarios oxide semiconductor and the manufacturing approach of describing in the above embodiments thereof is described in detail again below, be specially:
Application example 1:
Used Al xIn yZn zThe x=0.02 of oxide, y=0.49, z==0.49; Used trace doped thing is rare earth element: Ce, and the amount of Ce is respectively 0.01wt.%, 0.05wt.%, 0.1wt.%.
The manufacturing approach of oxide semiconductor:
The raw material of aforementioned proportion is processed a target, use the method for direct sputter to make film.The method of said direct sputter for will be in advance various raw materials of mixed according to target, unifiedly again use a made direct sputter of target of the various raw materials of said mixing, make film, thickness is 30nm.
The oxide semiconductor thin-film that should utilize above-mentioned manufacturing with instance is made thin-film transistor (its structural representation is as shown in Figure 1) as channel layer.Fig. 1 has shown according to the structure of thin-film transistor described in the execution mode, having comprised: substrate 10, grid 11, insulating barrier 12, channel layer 13, source electrode 14a and drain electrode 14b; Wherein, grid 11 is positioned on the substrate 10, and insulating barrier 12 is positioned on the grid 11, and channel layer 13 is positioned on the insulating barrier 12, and source electrode 14a and drain electrode 14b lay respectively at the two ends of channel layer 13.Source electrode 14a is channel length with the distance of the interval right ends of drain electrode 14b, and the length of the front and back end of source, drain electrode is channel width.
At first on glass substrate, make the Al film that a layer thickness is 300nm, carry out graphically obtaining grid 11 through the method for photoetching through the method for sputter.The anodised method manufacturing of insulating barrier 12 usefulness, thickness is 200nm.Anodised detailed process is that the substrate of having made aluminium gate is put into electrolyte solution as anode; Graphite or conductive metal sheet are put into electrolyte solution as negative electrode; Earlier between anode and negative electrode, add constant electric current, the most preferred value of this electric current is 0.1mA/cm 2, the voltage between anode and the negative electrode will linearly in time raise, constant this voltage when voltage reaches set point (150V), and the electric current between anode and negative electrode is less than 0.01mA/cm 2The time, the substrate taking-up is dried up process with nitrogen again clean, at this moment grid 11 surfaces form layer oxide films, and this oxide-film is insulating barrier 12; Said electrolyte solution is ammonium tartrate and ethylene glycol mixtures.Channel layer 13 is through the method manufacturing of direct sputter; The flow of oxygen and argon gas is respectively 50SCCM and 4SCCM (SCCM is a kind of volume flow unit in the sputter; English full name is: standard-state cubic centimeter per minute), thickness is 30nm.On channel layer 13, adopt the method for sputter to make indium oxide layer tin metal oxide (ITO, Indium Tin Oxides) film, thickness is 500nm, adopts the method for peeling off (lift-off) graphical, obtains source electrode 14a and drain electrode 14b simultaneously.
Application example 2:
Used Al xIn yZn zThe x=0.01 of oxide, y=0.33, z=0.66; Used trace doped thing is rare earth element: Ce, and the amount of Ce is respectively 0.01wt.%, 0.05wt.%, 0.1wt.%.
The raw material of aforementioned proportion is processed a target, use the method for direct sputter to make film, the manufacturing approach of oxide semiconductor is followed consistent with application example 1, and thickness is 30nm.
The film that should utilize above-mentioned manufacturing with instance has been made thin-film transistor as channel layer, and manufacturing approach is identical with application example 1, repeats no more here.
Application example 3:
Used Al xIn yZn zThe x=0.01 of oxide, y=0.66, z=0.33; Used trace doped thing is rare earth element: Ce, and the amount of Ce is respectively 0.01wt.%, 0.05wt.%, 0.1wt.%.
The raw material of aforementioned proportion is processed a target, use the method for direct sputter to make film, the manufacturing approach of oxide semiconductor is followed consistent with application example 1, and thickness is 30nm.
The film that should utilize above-mentioned manufacturing with instance has been made thin-film transistor as channel layer, and manufacturing approach is identical with application example 1, repeats no more here.
Application example 4:
Used Al xIn yZn zThe x=0.1 of oxide, y=0.45, z=0.45; Used trace doped thing is rare earth element: Ce, and the amount of Ce is respectively 0.01wt.%, 0.05wt.%, 0.1wt.%.
The raw material of aforementioned proportion is processed a target, use the method for direct sputter to make film, the manufacturing approach of oxide semiconductor is followed consistent with application example 1, and thickness is 30nm.
The film that should utilize above-mentioned manufacturing with instance has been made thin-film transistor as channel layer, and manufacturing approach is identical with application example 1, repeats no more here.
The relation of the doping of the threshold voltage in the application example 1 to 4, the subthreshold value amplitude of oscillation and Ce can find out that from table one threshold voltage of oxide semiconductor TFT increases along with the increase of the doping of Ce shown in table one, the subthreshold value amplitude of oscillation reduces simultaneously.Explain that trace doped thing Ce can play the effect of regulation and control threshold voltage, the reduction subthreshold value amplitude of oscillation.
Table one
Application example 5:
Used Al xIn yZn zThe x=0.02 of oxide, y=0.49, z=0.49; Used trace doped thing is rare earth element: La, and the amount of La is respectively 0.1wt.%, 1wt.%, 5wt.%.
The manufacturing approach of oxide semiconductor:
The raw material of aforementioned proportion is processed a target, use the method for direct sputter to make film.The method of said direct sputter for will be in advance various raw materials of mixed according to target, unifiedly again use a made direct sputter of target of the various raw materials of said mixing, make film, thickness is 30nm.
The film that should utilize above-mentioned manufacturing with instance has been made thin-film transistor as channel layer, and manufacturing approach is identical with application example 1, repeats no more here.
The relation of the doping of the threshold voltage in the application example 5, the subthreshold value amplitude of oscillation and La is shown in table two.
Table two
Figure BDA00002140953500082
Application example 6:
Used Al xIn yZn zThe x=0.02 of oxide, y=0.49, z=0.49; Used trace doped thing is 4B family element: Ti, and the amount of Ti is respectively 0.1wt.%, 1wt.%, 5wt.%.
The manufacturing approach of oxide semiconductor:
The raw material of aforementioned proportion is processed a target, use the method for direct sputter to make film.The method of said direct sputter for will be in advance various raw materials of mixed according to target, unifiedly again use a made direct sputter of target of the various raw materials of said mixing, make film, thickness is 30nm.
The film that should utilize above-mentioned manufacturing with instance has been made thin-film transistor as channel layer, and manufacturing approach is identical with application example 1, repeats no more here.
The relation of the doping of the threshold voltage in the application example 6, the subthreshold value amplitude of oscillation and Ti is shown in table three.
Table three
Figure BDA00002140953500091
Application example 7:
Used Al xIn yZn zThe x=0.02 of oxide, y=0.49, z=0.49; Used trace doped thing is 5B family element: Nb, and the amount of Nb is respectively 0.5wt.%, 2wt.%, 5wt.%.
The manufacturing approach of oxide semiconductor:
The raw material of aforementioned proportion is processed a target, use the method for direct sputter to make film.The method of said direct sputter for will be in advance various raw materials of mixed according to target, unifiedly again use a made direct sputter of target of the various raw materials of said mixing, make film, thickness is 30nm.
The film that should utilize above-mentioned manufacturing with instance has been made thin-film transistor as channel layer, and manufacturing approach is identical with application example 1, repeats no more here.
The relation of the doping of the threshold voltage in the application example 7, the subthreshold value amplitude of oscillation and Nb is shown in table four.
Table four
Figure BDA00002140953500092
The correspondence table that concerns by the pairing threshold voltage of above-mentioned each application example, the subthreshold value amplitude of oscillation and trace doped things such as Ce, La, Ti and Nb can be known; Trace doped things such as Ce, La, Ti and Nb are having similar effect to the control of threshold voltage and the reduction of the subthreshold value amplitude of oscillation; And except elements such as Ce, La, Ti and Nb, rare earth element, the oxide of rare earth element; 4B family element; 4B family element oxide, electronegativity is lower than 1.6 element or oxide in 5B family element or the 5B family element oxide, all can be used as the trace doped thing in the embodiment of the invention.
Only the application scenarios in the application example of the present invention is illustrated above, it is understandable that, in practical application, the more applications scene can also be arranged, specifically do not limit here with some examples.
The above; Be merely embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; Can expect easily changing or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion by said protection range with claim.

Claims (6)

1. an oxide semiconductor is characterized in that, comprising:
Al xIn yZn zOxide and trace doped thing;
Said x, y and z represent Al xIn yZn zAluminium in the oxide (Al), the atomic ratio of indium (In) and zinc (Zn); Wherein, 0.01≤x≤0.2,0.3≤y≤0.7,0.3≤z≤0.7, and x+y+z=1;
Said trace doped thing comprises: rare earth element, the oxide of rare earth element, 4B family element, 4B family element oxide, any one in 5B family element or the 5B family element oxide or two or more combinations.
2. according to the said oxide semiconductor of claim 1; It is characterized in that described rare earth element is a kind of in lanthanum (La), caesium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), scandium (Sc) and the yttrium (Y); Described 4B family element is a kind of in titanium (Ti), zirconium (Zr) and the hafnium (Hf); Described 5B family element is a kind of in vanadium (V) and the niobium (Nb).
3. according to claim 1 or 2 said oxide semiconductors, it is characterized in that the amount of said trace doped thing is in 0.01wt.% to 5wt.% scope.
4. the manufacturing approach of an oxide semiconductor is characterized in that, comprising:
With trace doped thing, aluminium oxide, four kinds of raw materials of indium oxide and zinc oxide manufacture four targets respectively, and are installed on four different target position sputter simultaneously, control the ratio of said four kinds of raw materials through the sputtering power of regulating different target position, to reach Al xIn yZn zThe target atoms ratio of oxide, and Al xIn yZn zThe target proportion of oxide and trace doped thing;
Or; With aluminium oxide; Three kinds of raw materials of indium oxide and zinc oxide manufacture oxide target material by said target atoms ratio, and said oxide target material and trace doped thing target are installed in sputter simultaneously on two different target position, control said Al through the sputtering power of regulating different target position xIn yZn zThe target proportion of oxide and trace doped thing;
Or with aluminium oxide, any two kinds in three kinds of raw materials of indium oxide and zinc oxide manufacture first target by said target atoms, and remaining a kind of raw material manufactures second target; With first target, second target is installed in sputter simultaneously on three different target position with trace doped thing target, controls said Al through the sputtering power of regulating different target position xIn yZn zThe target proportion of oxide and trace doped thing;
Or, with trace doped thing, aluminium oxide, four kinds of raw materials of indium oxide and zinc oxide are pressed Al xIn yZn zThe target atoms of oxide is Al when xIn yZn zThe target proportion of oxide and trace doped thing is processed target, makes film forming through the mode of sputter;
Said x, y and z represent Al xIn yZn zAl in the oxide, the atomic ratio of In and Zn; Said target atoms ratio is 0.01≤x≤0.2,0.3≤y≤0.7,0.3≤z≤0.7, and x+y+z=1;
Said trace doped thing comprises: rare earth element, the oxide of rare earth element, 4B family element, 4B family element oxide, any one in 5B family element or the 5B family element oxide or two or more combinations.
5. according to the said oxide semiconductor of claim 4, it is characterized in that described rare earth element is a kind of among La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc and the Y; Described 4B family element is a kind of among Ti, Zr and the Hf; Described 5B family element is a kind of among V and the Nb.
6. according to claim 4 or 5 said oxide semiconductors, it is characterized in that the amount of said trace doped thing is in 0.01wt.% to 5wt.% scope.
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