CN102830337A - System for testing direct current performance of wide bandgap semiconductor chip - Google Patents
System for testing direct current performance of wide bandgap semiconductor chip Download PDFInfo
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- CN102830337A CN102830337A CN2012103120400A CN201210312040A CN102830337A CN 102830337 A CN102830337 A CN 102830337A CN 2012103120400 A CN2012103120400 A CN 2012103120400A CN 201210312040 A CN201210312040 A CN 201210312040A CN 102830337 A CN102830337 A CN 102830337A
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Abstract
The invention discloses a system for testing direct current performance of a wide bandgap semiconductor chip and belongs to the field of test methods for direct current performance of semiconductor chips. The system comprises a gate supply, a drain supply, a gate ammeter, a drain ammeter, a test signal generator, a test signal modulator and a probe station, wherein the gate supply and the drain supply provide direct current power, and the probe station is used for holding a target test chip. A test platform is built based on an existing mature device, and the direct current performance of the wide bandgap semiconductor chip can be tested by a simple method. The testing system is low in cost, convenient to operate and maintain, stable in performance and high in reliability. The manufacturing cost of the wide bandgap semiconductor chip is also lowered. The efficiency in testing the wide bandgap semiconductor chip is improved. Valuable data for representing characteristics of the wide bandgap semiconductor chip is accumulated, and improvement on properties of the wide bandgap semiconductor chip is reliably guaranteed.
Description
Technical field
The present invention relates to the method for testing field of semi-conductor chip dc performance, be specially a kind of wide bandgap semiconductor chip dc performance test macro.
Background technology
Semiconductor material such as GaN and SiC has good characteristics such as the forbidden band is wide, high heat conductance, high carrier saturation drift velocity because of it, determined they are widely applied among wide band gap semiconductor device is made.
Can make chip based on half-breadth forbidden band conductor materials such as GaN and SiC, be called device after the chip process wide bandgap semiconductor Chip Packaging.Chip need be measured its dc performance before encapsulation, guaranteed that chip is qualified.
Wide bandgap semiconductor chip dc performance is by following parameter characterization: saturation current, mutual conductance, pinch-off voltage, voltage breakdown etc., measured chip dc performance are promptly accomplished above-mentioned parameter and are measured.
The chip of GaN and SiC material has WV height, characteristics that working current is big, and its WV is generally 28-48V, and is more much higher than GaAs, and working current is generally 1A-10A by its output power decision.We call little grid width chip to saturation current less than GaN and the SiC chip of 2A, and saturation current is called big grid width chip greater than GaN and the SiC chip of 2A.As stated, big grid width GaAs chip is low pressure, big electric current chip, and big grid width GaN and SiC chip are called high pressure, big electric current chip.For little grid width chip, measure its dc parameter and adopt general graphic instrument to realize.But for big grid width chip, a lot of problems can appear in common graphic instrument.Especially when measuring saturation current, mutual conductance, pinch-off voltage, because the power that device bears is DC power, test voltage and measuring current are bigger, and DC power is up to tens watts, and heat dissipation is very big, and heat is burnt easily.When the measured chip saturation current, because chip is in the ON state duty, electric current is bigger, is prone to self-excitation phenomena, causes chip to burn easily.
The big grid width chip high voltage of wide bandgap semiconductor heavy DC performance test at present is one of difficult point of wide bandgap semiconductor chip manufacturing.Though existing at present company has released and has been specifically designed to the graphic instrument of measuring big electric current, its manufacturing cost is up to ten thousand yuan of 15-130, and is comparatively expensive.And reliability is lower, and volume is big, weight is big.This kind graphic instrument can adopt pulsed mode, but the ubiquity testing efficiency is low, impulsive condition can not continuously adjustable shortcoming.Can't satisfy the needs of large-scale production.
In order to reduce cost; A kind of method of testing commonly used is the big grid width wide bandgap semiconductor chip dc performance of deriving with little grid width wide bandgap semiconductor chip dc performance; But this kind method can not truly reflect the chip dc performance, can't satisfy the needs of large-scale production equally.
Summary of the invention
To the problem that exists in the test of wide bandgap semiconductor chip dc performance; The invention provides a kind of wide bandgap semiconductor chip dc performance test macro; This system with implemented with low cost wide bandgap semiconductor chip dc performance test; And the dirigibility and the accuracy of dc performance test have been improved, simultaneously for the sign of wide bandgap semiconductor chip characteristics has accumulated valuable data, for the raising of wide band gap semiconductor device performance and the reduction of cost provide the foundation.
For solving the problems of the technologies described above; The technical scheme that the present invention adopts is: a kind of wide bandgap semiconductor chip dc performance test macro comprises being used to that grid power supply and drain power, grid current table and drain current table, measuring signal generator, the test signal modulator of direct supply is provided and being used for the probe station drop target test chip, that have gate input and drain electrode input end; The output terminal of said grid power supply is connected with the gate input of probe station via the grid current table, and said drain power is successively via being connected with the drain electrode input end of probe station behind drain current table, the test signal modulator; The output terminal of said measuring signal generator is connected with the trigger end of test signal modulator.
Between the gate input of said grid current table and probe station, also be provided with the test signal modulator; The output terminal of said measuring signal generator is connected with the trigger end of test signal modulator.
Also comprise the test signal monitor, the input end of said test signal monitor is connected with the output terminal of test signal modulator.
Said test signal monitor is an oscillograph.
Also comprise filtration module, said filtration module is located between grid current and the probe station or/and between test signal modulator and the probe station.
Said grid power supply and drain power are D.C. regulated power supply.
Said grid current table and drain current table are desk-top multimeter.
The present invention utilizes the instrument and meter of existing maturation to build a cover test macro, has successfully realized the dc performance test of wide bandgap semiconductor chip; Used instrument and meter cost is very low, and takies that volume is little, consumed power is little, has more easily detachable advantage; Used instrument and meter is often using in device detection at present, and maturity is high, and reliability is high, and cost of equipment maintenance is very low; The problem that the said system high voltage that runs in the wide bandgap semiconductor chip testing that adopts the voltage steps mode successfully to solve, big electric current cause test component to burn easily; Also can reduce simultaneously the cost of manufacture of wide bandgap semiconductor chip; Improved the testing efficiency of wide bandgap semiconductor chip greatly; For the sign of wide bandgap semiconductor chip characteristics has accumulated valuable data, for the raising of wide band gap semiconductor device performance provides reliable guarantee.
Description of drawings
Fig. 1 is a composition structural drawing of the present invention;
Fig. 2 is the composition structural drawing of the embodiment of the invention 1;
Fig. 3 is the composition structural drawing of the embodiment of the invention 2.
Embodiment
Embodiment 1
Know by illustrated in figures 1 and 2,
A kind of wide bandgap semiconductor chip dc performance test macro comprises being used to that grid power supply and drain power, grid current table and drain current table, measuring signal generator, the test signal modulator of direct supply is provided and being used for the probe station drop target test chip, that have gate input and drain electrode input end; The output terminal of said grid power supply is connected with the gate input of probe station via the grid current table, and said drain power is successively via being connected with the drain electrode input end of probe station behind drain current table, the test signal modulator; The output terminal of said measuring signal generator is connected with the trigger end of test signal modulator; This test macro also comprises the test signal monitor, and the input end of said test signal monitor is connected with the output terminal of test signal modulator.Said test signal monitor is an oscillograph.
In case of necessity; This test macro can also comprise filtration module; Said filtration module is located between grid current and the probe station or between test signal modulator and the probe station, also can be respectively equipped with filtration module between grid current and the probe station and between test signal modulator and the probe station.
Said grid power supply and drain power are D.C. regulated power supply; Said grid current table and drain current table are desk-top multimeter.
On the basis of Fig. 1, select for use pulse signal as test signal, be present embodiment.The concrete performance test operation steps of utilizing present embodiment to carry out is:
1) prepares 2 of D.C. regulated power supplies, as the grid power supply and the drain power that are used to provide direct supply; Pulse signal generator and pulse signal modulation device each 1 as measuring signal generator and test signal modulator; 1 of oscillograph is as the test signal monitor; 2 in desk-top multimeter is as grid current table and drain current table;
2) prepare various connecting lines, need make filtration module in case of necessity;
3) using various connecting lines with the above-mentioned the 1st) various device in going on foot couples together; Use cable that the output terminal of pulse signal generator is connected with the trigger end of pulse signal modulation device; Make pulse signal generator start pulse signal modulator; And the output terminal of oscillographic input end with the pulse signal modulation device be connected, utilize the output waveform of oscillograph monitoring pulse signal modulation device, that is will be carried in the signal waveform on the target test chip; Use connecting line will as the D.C. regulated power supply of grid power supply and drain power respectively with corresponding connection of desk-top multimeter as grid current table and drain current table; Output terminal with the drain current table is connected through the input end of connecting line with the pulse signal modulation device again;
4) use that connecting line will input end be corresponding is connected with the gate input of probe station and drain electrode respectively as the output terminal of the output terminal of the desk-top multimeter of grid current table, pulse signal modulation device; In case of necessity, can insert filtration module between desk-top multimeter and the probe station or between pulse signal modulation device and the probe station, perhaps all insert filtration module between desk-top multimeter and the probe station and between pulse signal modulation device and the probe station;
5) after above-mentioned connection is accomplished, the probe of probe station is contacted with the respective ends of target test chip; Put into probe station to the target test chip; Then, instrument, instrument energising; The setting pulse signal modulator is in the external trigger state;
6) adjustment pulse signal generator output parameter reaches setting, increases stabilized voltage supply voltage to setting, reads parameters such as saturation current that desk-top multimeter can the measurement target test chip, mutual conductance, pinch-off voltage.
In the above-mentioned steps, each instrument effect is described below:
Said grid power supply links to each other with the input end of grid current table through connecting, and the output terminal of grid current table links to each other with the gate input of probe station through connecting line.Grid power supply can provide continuous voltage output; The voltage steps precision can reach 0.001V; The stepping of common graphic instrument grid voltage is merely 0.1V; Therefore the stepping accuracy of native system measuring voltage is much larger than existing graphic instrument, and adopts independently the grid power supply can be from better control survey signal on the precision, thus corresponding raising measuring accuracy.When drain voltage one timing, measure parameters such as the mutual conductance of chip to be measured, pinch-off voltage through changing grid voltage.High-precision voltage steps can guarantee to measure the accuracy of mutual conductance, pinch-off voltage.
Said drain power links to each other with drain current table input end through connecting line, and the output terminal of drain current table links to each other with the input end of pulse signal modulation device through connecting line, and the output terminal of pulse signal modulation device links to each other with the drain electrode input end of probe station.Drain power also provides DC voltage, and passes through the input end that the drain current table gets into the pulse signal modulation device, becomes the pulse voltage of testing usefulness through the DC voltage after the modulators modulate, and continuous vdct is become the pulse voltage test.Said pulse signal generator triggers input end with the pulse signal modulation device and links to each other, but parameters such as the pulsewidth of the pulse voltage that pulse signal generator pulse signals modulator produces, dutycycle are accurately controlled., dutycycle less when pulsewidth hour, the drain electrode pulse voltage that measuring process produces is less, therefore the DC voltage of equivalence is also less, and then the drain current that produces also just reduces thereupon.Because the product of drain voltage and drain current is the dc power of test chip, drain current, drain voltage are more little, and the power consumption of chip to be measured is more little, and chip to be measured is difficult for self-excitation more, is not easy more to burn.Therefore, the existence of pulse signal modulation device has reduced the dc power of chip to be measured, has improved the reliability of test.
Said filtration module can be connected between grid current table and the probe station, perhaps between pulse signal modulation device and the probe station, can avoid the chip self-excitation like this, has improved the chip testing reliability.
Oscillograph links to each other with the output terminal of pulse signal modulation device, can monitor the parameters such as waveform, pulsewidth, dutycycle of the pulse voltage of pulse signal modulation device output, guarantees drain electrode pulse output accuracy.
Embodiment 2
Know that by shown in Figure 3 different with embodiment 1 is between the gate input of said grid current table and probe station, also to be provided with the test signal modulator; The output terminal of said measuring signal generator is connected with the trigger end of test signal modulator; Also be provided with the test signal monitor of monitor signal at the output terminal of test signal modulator.
Because grid voltage is very little usually, the necessity that therefore converts thereof into pulse voltage is not very big.If when test, also need gate voltage switches be become impulse form, so the pulse signal modulation device can be set between the gate input of grid current table and probe station, to realize this function.
The present invention has been successfully applied to the DC test of SiC MESFET 24mm grid width chip.Embodiment is described below:
Chip is described: 1) grid width: 24mm; 2) test condition-pulsewidth 50 μ s, dutycycle 5%; 3) test parameter: saturation current, mutual conductance, pinch-off voltage.
The concrete operations step is following:
1) builds required DC test system according to description of the invention;
2) guarantee to open all devices again after all devices knob makes zero, and guarantee that energising is normal;
3) triggering mode of setting pulse signal modulator is an external trigger, setting pulse signal generator pulse output condition: pulsewidth 50 μ s, dutycycle 5%;
4) be placed on chip to be measured on the probe station, the respective electrode of chip correctly is connected with the input end of probe station, the dc parameter that begins chip to be measured is measured;
5) measurement of saturation current: the output voltage of setting grid power supply is 0V; The output voltage that progressively increases drain power reads grid current table numerical value to test voltage 10V, is the grid current value this moment; Read drain current table numerical value, be the saturation current value this moment;
6) measurement of pinch-off voltage: keeping the output voltage of drain power is 10V, progressively increases the output voltage of grid power supply, remains unchanged until drain current, reads the output voltage of grid power supply, is pinch-off voltage this moment;
7) measurement of mutual conductance: keeping the output voltage of drain power is 10V, and the output voltage that reduces grid power supply is until the above-mentioned the 6th) numerical value of the pinch-off voltage that measures in the step 3/4, read drain current I this moment
DS1, reduce grid power supply output voltage to pinch-off voltage numerical value 3/4 subtract 1V again, at this moment, read drain current I
DS2, mutual conductance is Gm=I
DS1-I
DS2
8) reducing the drain power output voltage is 0V, and reducing the grid power supply output voltage is 0V, and powered-down is measured and finished.
Table 1 is depicted as the comparison that utilizes the right 24mm grid width SiC chip DC test result of DC test system of the present invention and existing graphic instrument.
Table 1
| ? | Saturation current (A) | Mutual conductance (mS) | Pinch-off voltage (V) |
| Graphic instrument | 5.8 | 400 | -12.0 |
| Native system | 5.7 | 390 | -12.1 |
Data through table 1 can know, utilize the result of DC test system testing gained of the present invention very nearly the same with the test result of utilizing existing graphic instrument, and this measuring accuracy that DC test of the present invention system also is described can guarantee fully.
But the cost of whole DC test of the present invention system is very low, about 3000 yuan of D.C. regulated power supply; About 2000 yuan of desk-top multimeter, 5000 yuan of pulse signal modulation devices, 20000 yuan of pulse signal generators; 3000 yuan of oscillographs are built the used fund of total system and are amounted to 3.8 ten thousand yuan, far below the price of existing graphic instrument; And the instrument of native system is the most frequently used instrument, need not to purchase in addition, builds flexibly during use; Can also continue independence when need not the system of building being, greatly reduce the cost of test, improve the dirigibility of test.
The used instrument of the present invention is the modal equipment in this area, so unit type no longer clearly provides.In actual application, select the equipment use of suitable types to get final product according to actual needs.
Obviously, embodiment described in the invention only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
Claims (7)
1. a wide bandgap semiconductor chip dc performance test macro is characterized in that comprising being used to that grid power supply and drain power, grid current table and drain current table, measuring signal generator, the test signal modulator of direct supply is provided and being used for the probe station drop target test chip, that have gate input and drain electrode input end; The output terminal of said grid power supply is connected with the gate input of probe station via the grid current table, and said drain power is successively via being connected with the drain electrode input end of probe station behind drain current table, the test signal modulator; The output terminal of said measuring signal generator is connected with the trigger end of test signal modulator.
2. a kind of wide bandgap semiconductor chip dc performance test macro according to claim 1 is characterized in that between the gate input of said grid current table and probe station, also being provided with the test signal modulator; The output terminal of said measuring signal generator is connected with the trigger end of test signal modulator.
3. a kind of wide bandgap semiconductor chip dc performance test macro according to claim 1 and 2 is characterized in that also comprising the test signal monitor, and the input end of said test signal monitor is connected with the output terminal of test signal modulator.
4. a kind of wide bandgap semiconductor chip dc performance test macro according to claim 3 is characterized in that said test signal monitor is an oscillograph.
5. a kind of wide bandgap semiconductor chip dc performance test macro according to claim 1 and 2 is characterized in that also comprising filtration module, and said filtration module is located between grid current and the probe station or/and between test signal modulator and the probe station.
6. a kind of wide bandgap semiconductor chip dc performance test macro according to claim 1 is characterized in that said grid power supply and drain power are D.C. regulated power supply.
7. a kind of wide bandgap semiconductor chip dc performance test macro according to claim 1 is characterized in that said grid current table and drain current table are desk-top multimeter.
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| CN103064005A (en) * | 2012-12-21 | 2013-04-24 | 上海宏力半导体制造有限公司 | Performance testing method of low power consumption chip |
| CN103913690A (en) * | 2014-04-04 | 2014-07-09 | 中国科学院微电子研究所 | Method and system for measuring frequency dispersion characteristic of transistor output resistance |
| CN106680545A (en) * | 2016-12-30 | 2017-05-17 | 江苏中科君芯科技有限公司 | Dynamic test clamp for IGBT and FRD chips |
| CN111562481A (en) * | 2020-05-25 | 2020-08-21 | 中国电子科技集团公司第十三研究所 | Compound semiconductor chip on-chip test circuit based on power-on probe |
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| CN106680545A (en) * | 2016-12-30 | 2017-05-17 | 江苏中科君芯科技有限公司 | Dynamic test clamp for IGBT and FRD chips |
| CN111562481A (en) * | 2020-05-25 | 2020-08-21 | 中国电子科技集团公司第十三研究所 | Compound semiconductor chip on-chip test circuit based on power-on probe |
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Application publication date: 20121219 |