CN102830068A - Multilayer film system luminous energy distribution measuring method - Google Patents
Multilayer film system luminous energy distribution measuring method Download PDFInfo
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- CN102830068A CN102830068A CN2012102743989A CN201210274398A CN102830068A CN 102830068 A CN102830068 A CN 102830068A CN 2012102743989 A CN2012102743989 A CN 2012102743989A CN 201210274398 A CN201210274398 A CN 201210274398A CN 102830068 A CN102830068 A CN 102830068A
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Abstract
The invention discloses a multilayer film system luminous energy distribution measuring method. The method comprises the following steps of measuring refraction rate, extinction coefficient and the thickness of each layer of film for a substrate and each layer of film respectively by adopting a spectrum ellipsometer and a step meter; then constructing a virtual multilayer film system; and calculating the up and down luminous energy distribution situation of each interface respectively through an equivalent interface method, thus the influence on luminous energy distribution by each interface and each layer of film can be obtained through comparing the up and down luminous energy distribution situation of each interface and each layer of film. The measuring method provided by the invention is simple and convenient, has stable and reliable measured results, and is wide in application range.
Description
Technical field
The invention belongs to the optical measurement field, particularly a kind of multilayer film system luminous energy distribution measurement method.
Background technology
It is the optical loss of understanding in the device that luminous energy in the multilayer film system distributes, the important evidence of the light transmission in the optimised devices.The luminous energy distribution research of multilayer film system comprises that light absorption research and all circles in each tunic face two importances of luminous energy distribution influence research; Be important research project very in the field of photoelectric technology, extremely important using value arranged in solar-energy photo-voltaic cell, photodetector and light emitting diode fields such as (being called for short LED).
The normal spectroscopic ellipsometers MEASUREMENTS OF THIN material optical constant that adopts in the Modern Optics Technology, reflectivity, transmissivity and the absorptivity of employing spectrophotometer measurement multilayer film system adopt equivalent interface tech to calculate reflection, transmission and the absorptivity of multilayer film system.But spectroscopic ellipsometers can't be measured the reflection of multilayer film system, transmission and absorptivity, and light absorption and all circles that spectrophotometer and equivalent interface tech can't be measured or calculate in each tunic face the influence that luminous energy distributes.The research that this has restricted light transmission and optical loss in the device to a great extent brings certain degree of difficulty to device architecture research and performance optimization research.
Summary of the invention
The objective of the invention is to solve the influence that the light absorption that can't effectively measure in the multilayer film system in each tunic and all circles distribute in the face of luminous energy, and propose the measuring method that a kind of multilayer film system luminous energy distributes.The invention solves the contemporary optics means and can't measure the problem that luminous energy distributes in the multilayer film system, distribution and all circles in the multilayer film system provide the reliable technique means in the face of the influence that luminous energy distributes for the research incident light.
A kind of multilayer film system luminous energy distribution measurement method is used for measuring each interface of multilayer film system and each tunic to the influence that luminous energy distributes, and said method comprising the steps of:
(1) measures the optical constant and the film thickness of incident medium, each tunic and substrate respectively;
(2) to each interface, reflectivity, transmissivity and absorptivity when measuring incident light infinitely near this interface;
(3) to each interface, reflectivity, transmissivity and absorptivity when the measurement incident light has just striden across this interface;
(4) according to the luminous energy distributed intelligence that obtains to the series arrangement at film base interface from the teleblem surface, more adjacent two measurement results obtain each interface and each tunic result that influences to the luminous energy distribution.
Said step (1) further comprises:
(1.1) adopt spectroscopic ellipsometers to measure substrate refractive index and extinction coefficient;
(1.2) in substrate, successively prepare monofilm, measure refractive index, extinction coefficient and the film thickness of each tunic.
Said step (2) further comprises:
(2.1) read the optical constant of the light incident side film adjacent with this interface;
(2.2) use the optical constant constructing virtual substrate of the light incident side film adjacent, replace all films of exiting side and substrate, make up virtual multilayer film system with this interface;
(2.3) adopt equivalent interfacial process to obtain the reflectivity and the transmissivity of said virtual multilayer film system, calculate absorptivity then.
Said step (3) further comprises:
(3.1) read the optical constant of the exiting side film adjacent with this interface;
(3.2) use the optical constant constructing virtual substrate of the exiting side film adjacent, replace all films of exiting side and substrate, make up virtual multilayer film system with this interface;
(3.3) adopt equivalent interfacial process to obtain the reflectivity and the transmissivity of said virtual multilayer film system, calculate absorptivity then.
Said according to the luminous energy distributed intelligence that obtains to the series arrangement at film base interface from the teleblem surface, more adjacent two measurement results obtain each interface and each tunic result that influences to the luminous energy distribution, comprising:
The contrast incident light infinitely near certain interface with just striden across reflection, transmission and the absorptivity at this interface, obtain of the influence of this interface to the luminous energy distribution;
Contrast has just striden across certain interface and has obtained the influence that this tunic distributes to luminous energy with unlimited reflection near next interface, transmission and absorptivity.
Further, the computing formula of said absorptivity is following:
A＝1-R-T
Wherein A is an absorptivity, and R is a reflectivity, and T is a transmissivity.
Further, said all circles face comprises teleblem surface, intermembranous interface and film base interface.
A kind of multilayer film of the present invention system luminous energy distribution measurement method; Adopt spectroscopic ellipsometers and step appearance to measure the thickness of refractive index, extinction coefficient and each tunic of substrate and each tunic respectively; Make up virtual multilayer film system then; Calculate the upper and lower luminous energy distribution situation in each interface through equivalent interfacial process respectively, thereby, just can obtain the influence that each interface and each tunic distribute to luminous energy through comparing each interface and the upper and lower luminous energy distribution situation of each tunic.Measuring method is simple and convenient, and measurement result is reliable and stable.Especially, step 202,203 all can realize through computer program, can implant the software systems of spectroscopic ellipsometers, as the data analysis module of spectroscopic ellipsometers, widen the application of spectroscopic ellipsometers, also can use separately, the scope of application is extensive.
Description of drawings
Fig. 1 is a multilayer film system structural representation;
Fig. 2 is multilayer film of the present invention system luminous energy distribution measurement method process flow diagram;
Fig. 3 is Cu (In, Ga) Se
2The solar battery structure synoptic diagram;
Fig. 4 a is Cu (In, Ga) Se
2Stride across each reflectivity distribution curve at the interface in the solar cell;
Fig. 4 b is Cu (In, Ga) Se
2Stride across each transmissivity distribution curve at the interface in the solar cell;
Fig. 4 c is Cu (In, Ga) Se
2Stride across each absorptivity distribution curve at the interface in the solar cell;
Fig. 5 a is Cu (In, Ga) Se
2Approach each reflectivity distribution curve at the interface in the solar cell;
Fig. 5 b is Cu (In, Ga) Se
2Approach each transmissivity distribution curve at the interface in the solar cell;
Fig. 5 c is Cu (In, Ga) Se
2Approach each absorptivity distribution curve at the interface in the solar cell.
Embodiment
Below in conjunction with accompanying drawing and embodiment technical scheme of the present invention is explained further details, following examples do not constitute qualification of the present invention.
As shown in Figure 1, the structure of multilayer film system comprises: incident medium L
0, film L
1, L
2..., L
jAnd substrate L
J+1Utilize spectroscopic ellipsometers and step appearance that the multilayer film system is measured, obtain the refractive index n of incident medium, film and substrate
0, n
1, n
2..., n
J+1With extinction coefficient k
0, k
1, k
2..., k
J+1, and the thickness d of each layer film
1, d
2..., d
j
Be example below with Fig. 1, describe the luminous energy distribution measurement method of multilayer film of the present invention system in detail, its process flow diagram is as shown in Figure 2, comprises step:
Step 201, measure the optical constant and the film thickness of incident medium, each tunic and substrate respectively.
Particularly, the material optical constant comprises refractive index n and extinction coefficient k, and the optical constant of incident medium, each tunic and substrate and film thickness can adopt following method to measure:
(1) adopt spectroscopic ellipsometers to measure substrate refractive index n and extinction coefficient k;
(2) in substrate, successively prepare monofilm, measure refractive index n, extinction coefficient k and the film thickness d of each tunic.
Particularly, if this tunic is dielectric material (k=0), then can utilize spectroscopic ellipsometers to measure the refractive index n and the physical thickness d of material simultaneously; If this tunic is absorbing material (k ≠ 0), then can measure its physical thickness d through the clear area (k=0) of this tunic earlier, be input to refractive index n and extinction coefficient k that the spectroscopic ellipsometers routine analyzer is measured full spectral range then; If this tunic all has absorption (k ≠ 0) in the spectral range of spectroscopic ellipsometers, then can measure its physical thickness d through the step appearance earlier, be input to the spectroscopic ellipsometers routine analyzer then, measure the refractive index n and the extinction coefficient k of full spectral range.
If incident medium is an air, can make the refractive index n ≡ 1 of incident medium, extinction coefficient k ≡ 0.If incident medium is solid or fluent material, then can directly utilize the spectroscopic ellipsometers test.
Step 202, to each interface, reflection, transmission and absorptivity when measuring incident light infinitely near this interface.
Particularly; The multilayer film system is made up of incident medium, multilayer film, substrate, a plurality of interface (containing teleblem surface, intermembranous interface and film base interface); Concerning the multilayer film system of continuous, even, isotropic plane; Film only occurs in film inside to the absorption of light, and film only occurs in the surface and interface place to reflection of light, and total incident light deducts the absorbing light that reflected light and transmitted light can obtain the film based system.
The measuring method of reflection, transmission and the absorptivity of incident light during infinitely near certain interface comprises step:
(1) reads the optical constant of the light incident side film adjacent with this interface;
(2) use the optical constant constructing virtual substrate of adjacent with this interface light incident side film, replace all films of exiting side and substrate, make up virtual multilayer film system;
(3) adopt equivalent interfacial process to calculate the reflectivity and the transmissivity of above-mentioned virtual multilayer film system, calculate the absorptivity of this system then according to formula (1):
A＝1-R-T (1)
Wherein A is an absorptivity, and R is a reflectivity, and T is a transmissivity.
Need to prove equivalent interfacial process, come from 20 pages to 33 pages of " contemporary optics thin film technique " chapter 1 (book number: ISBN 978-7-308-04977, publication date: November in 2006 the 1st edition), belong to prior art, repeat no more here.
Step 203, to each interface, reflection, transmission and absorptivity when measuring incident light and just having striden across certain interface.
The measuring method of the reflection when particularly, incident light has just striden across certain interface, transmission and absorptivity comprises step:
(1) reads the optical constant of the exiting side film adjacent with this interface;
(2) use the optical constant constructing virtual substrate of the exiting side film adjacent, replace all films of exiting side and substrate, make up virtual multilayer film system with this interface;
(3) adopt equivalent interfacial process to calculate the reflectivity and the transmitance of above-mentioned virtual multilayer film system, calculate the absorptivity of this system then according to formula (1).
Step 204, according to the luminous energy distributed intelligence that obtains to the series arrangement at film base interface from the teleblem surface, more adjacent two measurement results obtain each interface and each tunic result that influences to the luminous energy distribution
Compare the data that obtain through step 202 and step 203, can obtain the influence that this interface distributes to luminous energy.Particularly, multilayer film system surface and interface to the research method of luminous energy distribution influence is: reflection, transmission and absorptivity when (1) acquisition incident light has just striden across certain interface; Reflection, transmission and absorptivity when (2) obtaining incident light infinitely near next interface; (3) adopt (1), (2) said method that upper and lower two luminous energy at the interface of every tunic are distributed and calculate, obtain upper and lower luminous energy distributed intelligence at the interface; (4), contrast the luminous energy that these information can obtain in the multilayer film system and distribute and each tunic and the influence of all circles in the face of the luminous energy distribution according to the luminous energy distributed intelligence that obtains to the series arrangement at film base interface from the teleblem surface.Wherein, the contrast incident light infinitely near certain interface with just striden across reflection, transmission and the absorptivity at this interface, obtain of the influence of this interface to the luminous energy distribution; Contrast has just striden across certain interface and has obtained the influence that this tunic distributes to luminous energy with unlimited reflection near next interface, transmission and absorptivity.
For further illustrating the present invention, below will be with Cu (In, Ga) Se
2(being called for short CIGS) solar cell is an example, measures the wherein luminous energy distribution situation of each near interface.Cu (In, Ga) Se
2Battery structure is as shown in Figure 3, the Mo that grows successively on the substrate of glass, Cu (In, Ga) Se
2, CdS, intrinsic ZnO (being called for short i-ZnO), Al doping ZnO (being called for short ZnO:Al) five layer films, incident medium is an air.Cu (In, Ga) Se
2The refractive index of each thin layer and substrate of glass and delustring absorb in the battery, and the thickness of each thin layer gets through spectroscopic ellipsometers and the measurement of step appearance.Optical constant that utilization records and film thickness data are to Cu (In, Ga) Se
2The luminous energy of each near interface distributes and calculates in the solar cell, obtains striding across air/ZnO:Al, ZnO:Al/i-ZnO, i-ZnO/CdS, CdS/Cu (In, Ga) Se
2, Cu (In, Ga) Se
2Each luminous energy at the interface of/Mo and Mo/ glass distributes, and approaches ZnO:Al/i-ZnO, i-ZnO/CdS, CdS/Cu (In, Ga) Se
2, Cu (In, Ga) Se
2Each luminous energy at the interface of/Mo and Mo/ glass distributes detailed results such as Fig. 4 and shown in Figure 5.
Above embodiment is only in order to technical scheme of the present invention to be described but not limit it; Under the situation that does not deviate from spirit of the present invention and essence thereof; Those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (8)
1. a multilayer film system luminous energy distribution measurement method is used for measuring each interface of multilayer film system and each tunic to the influence that luminous energy distributes, and it is characterized in that said method comprises step:
(1) measures the optical constant and the film thickness of incident medium, each tunic and substrate respectively;
(2) to each interface, reflectivity, transmissivity and absorptivity when measuring incident light infinitely near this interface;
(3) to each interface, reflectivity, transmissivity and absorptivity when the measurement incident light has just striden across this interface;
(4) according to the luminous energy distributed intelligence that obtains to the series arrangement at film base interface from the teleblem surface, more adjacent two measurement results obtain each interface and each tunic result that influences to the luminous energy distribution.
2. luminous energy distribution measurement method as claimed in claim 1 is characterized in that, said step (1) further comprises:
(1.1) measure substrate refractive index and extinction coefficient;
(1.2) in substrate, successively prepare monofilm, measure refractive index, extinction coefficient and the film thickness of each tunic.
3. luminous energy distribution measurement method as claimed in claim 1 is characterized in that, said step (2) further comprises:
(2.1) read the optical constant of the light incident side film adjacent with this interface;
(2.2) use the optical constant constructing virtual substrate of the light incident side film adjacent, replace all films of exiting side and substrate, make up virtual multilayer film system with this interface;
(2.3) adopt equivalent interfacial process to obtain the reflectivity and the transmissivity of said virtual multilayer film system, calculate absorptivity then.
4. luminous energy distribution measurement method as claimed in claim 1 is characterized in that, said step (3) further comprises:
(3.1) read the optical constant of the exiting side film adjacent with this interface;
(3.2) use the optical constant constructing virtual substrate of the exiting side film adjacent, replace all films of exiting side and substrate, make up virtual multilayer film system with this interface;
(3.3) adopt equivalent interfacial process to obtain the reflectivity and the transmissivity of said virtual multilayer film system, calculate absorptivity then.
5. luminous energy distribution measurement method as claimed in claim 1 is characterized in that, the contrast incident light infinitely near certain interface with just striden across reflection, transmission and the absorptivity at this interface, obtain of the influence of this interface to the luminous energy distribution.
6. luminous energy distribution measurement method as claimed in claim 1 is characterized in that, contrast has just striden across certain interface and obtained the influence that this tunic distributes to luminous energy with unlimited reflection near next interface, transmission and absorptivity.
7. like claim 3 or 4 described luminous energy distribution measurement methods, it is characterized in that the computing formula of said absorptivity is following:
A＝1-R-T
Wherein A is an absorptivity, and R is a reflectivity, and T is a transmissivity.
8. like the described luminous energy distribution measurement method of the arbitrary claim of claim 1-6, it is characterized in that said all circles face comprises teleblem surface, intermembranous interface and film base interface.
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| CN107430065A (en) * | 2015-03-29 | 2017-12-01 | 住友化学株式会社 | Assay method, multilayer board and the measure device of multilayer board |
| CN109001122A (en) * | 2018-09-29 | 2018-12-14 | 西安工业大学 | The optical constant measuring device and method of gradient or graded index films |
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| CN104458614A (en) * | 2014-12-02 | 2015-03-25 | 中国航天科工集团第三研究院第八三五八研究所 | Accurate calculation method for extinction coefficient of low-absorption thin-film material |
| CN107430065A (en) * | 2015-03-29 | 2017-12-01 | 住友化学株式会社 | Assay method, multilayer board and the measure device of multilayer board |
| CN107430065B (en) * | 2015-03-29 | 2020-05-19 | 住友化学株式会社 | Method for measuring laminated substrate, and measuring apparatus |
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Application publication date: 20121219 |