CN102820504A - Micro mechanical filter of full-sealing structure - Google Patents
Micro mechanical filter of full-sealing structure Download PDFInfo
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- CN102820504A CN102820504A CN2012103226034A CN201210322603A CN102820504A CN 102820504 A CN102820504 A CN 102820504A CN 2012103226034 A CN2012103226034 A CN 2012103226034A CN 201210322603 A CN201210322603 A CN 201210322603A CN 102820504 A CN102820504 A CN 102820504A
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Abstract
The invention discloses a micro mechanical filter of a full-sealing structure. A basic structure of the filter is of an interdigital stripline filter structure and formed by vertically overlapping two layers of dielectric materials, and an interdigital metal electrode layer manufactured by a micro mechanical process is arranged between the two layers of dielectric materials. A cavity manufactured by using an etching process is arranged on an upper surface of a lower dielectric, through holes are arranged on both an upper dielectric layer and the lower dielectric layer, and metal layers are manufactured on inner walls of the through holes. A surface electrode layer is manufactured by using the micro mechanical process on surfaces of both the upper dielectric layer and the lower dielectric layer, and an input lead-out line and an output lead-out line are arranged on a surface of one of the two dielectric layer. Compared with the existing micro mechanical filter, size is further reduced, a wafer level packaging method is used, a shortcoming that the existing micro mechanical filter cannot achieve full sealing is overcome, outer casing packaging is not needed, and assembly is simplified.
Description
Technical field
The present invention relates to a kind of all-sealed structure small mechanical filter that adopts wafer-level packaging, particularly a kind of based on micromechanical process and the filter made by High Resistivity Si or quartz material.
Background technology
Along with development of Communication Technique, machine system has proposed requirements such as big bandwidth, small size, high amplitude-phase consistency to microwave filter.Art of microwave filters such as traditional cavity body filter, microstrip filter, dielectric filter, LTCC (LTCC) filter and thin-film bulk acoustic wave filter are difficult on indexs such as bandwidth, volume, amplitude-phase consistency, meet the demands fully.
Small mechanical filter is the one type of new device that has merged microwave filter design and micromechanical process technology; It is through adopting silicon chip or quartz substrate; The success with the MEMS process application in the design of microwave filter; And use wafer bonding technology to realize the encapsulation certainly of chip, have numerous advantages such as bandwidth is big, volume is little, amplitude-phase consistency is good.
Document " A Planar High-Q Micromachined Monolithic Half-Coaxial Transmission-Line Filter ", IEEE transactions on microwave theory and techniques, 2006; 54 (12): 4161-4168; Introduced a kind of small mechanical filter structure, the relative cavity body filter of volume reduces significantly, but this filter is not an all-sealed structure; Need the secondary encapsulation, this will further increase device volume.
Summary of the invention
Problem to be solved by this invention provides the small mechanical filter of a kind of all-sealed structure, high reliability; This filter has overcome existing small mechanical filter can't realize hermetic shortcoming; And further reduced the filter volume, have numerous advantages such as bandwidth is big, volume is little, amplitude-phase consistency is good, can produce in batches.
Technical problem proposed by the invention is to solve like this:
All-sealed structure small mechanical filter provided by the present invention; Thereby adopt a kind of the making to form the all-sealed structure small mechanical filter based on micromechanical process; Said filter comprises the last dielectric layer and following dielectric layer of stack up and down, the said intermetallic metal electrode layer of going up the interdigital electrode that is provided with band tap signal line between dielectric layer and the following dielectric layer; The contacted dielectric layer upper surface down of said and intermetallic metal electrode layer is provided with first cavity with interdigital electrode tap signal line coupling; The contacted dielectric layer upper surface down of said and intermetallic metal electrode layer is provided with second cavity with interdigital electrode finger coupling; The said dielectric layer surface of going up is provided with dielectric layer upper surface metal level; Said dielectric layer lower face down is provided with down the dielectric layer lower surface metal layer; Also be provided with the through hole that matches with the intermetallic metal electrode layer on the said upper and lower dielectric layer, the said electrode of going up dielectric layer upper surface metal level is connected with the electrode of intermetallic metal electrode layer through through hole; The electrode of said dielectric layer lower surface metal layer down is connected with the electrode of intermetallic metal electrode layer through through hole; Any dielectric layer surface in the said upper and lower dielectric layer is provided with input, output signal line.
Further, said intermetallic metal electrode layer, upward dielectric layer upper surface metal level and the making of following dielectric layer lower surface metal layer employing micromechanical process.
Further, said through-hole wall preparation has metal level; Said first cavity and second cavity adopt the etching technics preparation.
Further, said intermetallic metal electrode layer is based on the interdigital filter structure, and said intermetallic metal electrode layer comprises the first metal layer of the lower surface that is positioned at dielectric layer and is positioned at second metal level of the upper surface of dielectric layer down.
Further, said second cavity between interdigital electrode finger and cavity depth less than thickness of dielectric layers.
Further, said input, output signal line are arranged on the thin dielectric layer surface of upper and lower thickness of dielectric layers, and said input, output signal line are microstrip line or co-planar waveguide line.
Further, the input and output tap line that is provided with of said input/output signal line and intermetallic metal electrode layer is connected through the through hole of upper and lower dielectric layer.
Further, the ground wire of said upward dielectric layer upper surface is connected with the ground wire of intermetallic metal electrode layer through the through hole of last dielectric layer; The ground wire of said dielectric layer lower surface down passes through down, and the through hole of dielectric layer is connected with the ground wire of intermetallic metal electrode layer.
Further, said upper and lower dielectric layer is High Resistivity Si dielectric material or quartz medium material.
Further, said filter adopts wafer scale bonding encapsulation technology, has all-sealed structure.
The present invention has the following advantages:
1, the present invention combines interdigitated strip line filter structure and micromechanical process technology, has the craft precision height, the advantage that can produce in batches.The interdigital filter structure second passband center is at three times more than the centre frequency, and high-end band suppresses outward.Adopt the dielectric material of high-dielectric coefficients such as High Resistivity Si, help reducing the volume of filter.
2, utilize dark silicon etching technology,, weaken the coupling between the finger, help reducing the volume of filter etching cavity between the interdigital electrode of dielectric layer down.
3, adopt through hole that tap signal line between dielectric layer and the input of dielectric layer surface signal, output line are coupled together, realized the all-sealed structure of filter.
4, adopt the polishing wafer thinning technique, last dielectric layer is carried out attenuate, can weaken the coupling between the interdigital finger, will further reduce the filter volume.
5, adopt wafer bond techniques and through hole technology, realized the wafer-level packaging of filter, reduced encapsulation volume, improved packaging efficiency.
Other advantage of the present invention, target and characteristic will be set forth in specification subsequently to a certain extent; And to a certain extent; Based on being conspicuous to those skilled in the art, perhaps can from practice of the present invention, obtain instruction to investigating of hereinafter.Target of the present invention can realize through the structure that is particularly pointed out in following specification and the accompanying drawing and obtain with other advantage.
Description of drawings
In order to make the object of the invention, technical scheme and advantage clearer, will combine accompanying drawing that the present invention is made further detailed description below, wherein:
Fig. 1 is the layering schematic perspective view of all-sealed structure small mechanical filter;
Fig. 2 is the assembling schematic perspective view of all-sealed structure small mechanical filter;
Fig. 3 is an embodiment sectional view of going up each manufacturing procedure of dielectric layer;
Fig. 4 is the embodiment sectional view of following each manufacturing procedure of dielectric layer;
Fig. 5 is the embodiment sectional view of each manufacturing procedure behind last dielectric layer and the following dielectric layer bonding.
Embodiment
Below will combine accompanying drawing, the preferred embodiments of the present invention will be carried out detailed description; Should be appreciated that preferred embodiment has been merely explanation the present invention, rather than in order to limit protection scope of the present invention.
Embodiment 1
All-sealed structure small mechanical filter provided by the invention, said filter comprise the last dielectric layer and following dielectric layer of stack up and down, the said intermetallic metal electrode layer of going up the interdigital electrode that is provided with band tap signal line between dielectric layer and the following dielectric layer; The contacted dielectric layer upper surface down of said and intermetallic metal electrode layer is provided with first cavity with interdigital electrode tap signal line coupling; The contacted dielectric layer upper surface down of said and intermetallic metal electrode layer is provided with second cavity with interdigital electrode finger coupling; The said dielectric layer surface of going up is provided with dielectric layer upper surface metal level; Said dielectric layer lower face down is provided with down the dielectric layer lower surface metal layer; Also be provided with the through hole that matches with the intermetallic metal electrode layer on the said upper and lower dielectric layer, the said electrode of going up dielectric layer upper surface metal level is connected with the electrode of intermetallic metal electrode layer through through hole; The electrode of said dielectric layer lower surface metal layer down is connected with the electrode of intermetallic metal electrode layer through through hole; Any dielectric layer surface in the said upper and lower dielectric layer is provided with input, output signal line.
Said intermetallic metal electrode layer, upward dielectric layer upper surface metal level and the making of following dielectric layer lower surface metal layer employing micromechanical process.Said through-hole wall preparation has metal level; Said first cavity and second cavity adopt etching technics preparation and cavity depth less than thickness of dielectric layers.Said intermetallic metal electrode layer is based on the interdigital filter structure, and said intermetallic metal electrode layer comprises the first metal layer of the lower surface that is positioned at dielectric layer and is positioned at second metal level of the upper surface of dielectric layer down.
Said input, output signal line are arranged on the thin dielectric layer surface of upper and lower thickness of dielectric layers, and said input, output signal line are microstrip line or co-planar waveguide line.The input and output tap line that said input/output signal line and intermetallic metal electrode layer are provided with is connected through the through hole of upper and lower dielectric layer.
The through hole that the said ground wire of going up the dielectric layer upper surface passes through last dielectric layer is connected with the ground wire of intermetallic metal electrode layer; The ground wire of said dielectric layer lower surface down passes through down, and the through hole of dielectric layer is connected with the ground wire of intermetallic metal electrode layer.Said upper and lower dielectric layer is High Resistivity Si dielectric material or quartz medium material.Said filter adopts wafer scale bonding encapsulation technology, has all-sealed structure.
Embodiment 2
To further describe the all-sealed structure small mechanical filter below:
Fig. 1 is the layering schematic perspective view of all-sealed structure small mechanical filter; All-sealed structure small mechanical filter based on micromechanical process; This filter is superposeed up and down by the two layer medium layer and constitutes, and the metal electrode layer that adopts micromechanical process to make is arranged between the two layer medium layer; Wherein, f1 is last dielectric layer upper surface metal level, and f2 is last dielectric layer, and f3 is an intermediate metal layer, and f4 is following dielectric layer, and f5 is dielectric layer lower surface metal layer down, and following dielectric layer upper surface has the cavity that adopts the etching technics preparation; On upper and lower two layer medium layer, be equipped with through hole, the through-hole wall preparation has metal level; The surface electrode layer that upper and lower dielectric layer surface all has micromechanical process to make, one of them dielectric layer surface are provided with input, output lead-out wire.
1,8 are input, output signal line; 2,9 is the electrode that the input of last dielectric layer upper surface metal level, output signal line are connected with the through hole of intermediate metal layer tap signal line; 3 is last dielectric layer upper surface metal level grounding electrode; 4,5,6,7,10,11,12 is the through hole that last dielectric layer upper surface metal level grounding electrode is connected with the intermediate metal layer grounding electrode; 13,14,15,16,17,18,19,20,21 is last dielectric layer through hole; 22 is the intermediate metal layer grounding electrode, and it also plays the effect of metal congruent melting bonding weld-ring, and 23,31 is the interdigital electrode tap signal of intermediate metal layer line; 24,25,26,27,28,29,30 is the interdigital electrode of intermediate metal layer; The radical of interdigital electrode can be adjusted according to the filter index request, and 32,33,44,45 is first cavity on the following dielectric layer on interdigital electrode tap signal line both sides, and 34,36,38,39,41,42 is second cavity on the following dielectric layer between the interdigital electrode finger; 35,37,40,43,46,47,48 are following dielectric layer through hole, and 49,50,51,52,53,54,55 is the through hole that following dielectric layer lower surface metal layer grounding electrode is connected with the intermediate metal layer grounding electrode.
F1, f2, f3, f4, f5 among Fig. 1 are assembled up, and effect is as shown in Figure 2.The last dielectric layer that is obtained by dotted line AA and following dielectric layer sectional view are shown in Fig. 3 B, 4 C.
In this embodiment, the making of all-sealed structure small mechanical filter is divided into 3 major parts, comprises dielectric layer, the preparation of following dielectric layer and the preparing craft behind the upper and lower dielectric layer bonding.The dielectric layer material is chosen as High Resistivity Si, thickness 400 μ m; Electrode material is low resistivity metal materials such as gold, copper.
The manufacturing procedure of last dielectric layer is as shown in Figure 3.After adopting standard semiconductor Silicon Wafer cleaning to accomplish the Silicon Wafer cleaning, use LPCVD technology at Silicon Wafer upper and lower surfaces growth one deck silicon nitride film 56, film thickness is between 100nm-1000nm, shown in Fig. 3 A.Then, employing is peeled off, evaporation technology prepares the interdigital electrode 57 of filter at the upper surface of Silicon Wafer, and thickness is 1 μ m-10 mu m range, shown in Fig. 3 B.
The manufacturing procedure of following dielectric layer is as shown in Figure 4.After adopting standard semiconductor Silicon Wafer cleaning to accomplish the Silicon Wafer cleaning, use LPCVD technology at Silicon Wafer upper and lower surfaces growth one deck silicon nitride film 58, film thickness is between 100nm-1000nm, shown in Fig. 4 A.Then, employing is peeled off, evaporation technology prepares the interdigital electrode 59 of filter at the upper surface of Silicon Wafer, and thickness is 1 μ m-10 mu m range, shown in Fig. 4 B.Adopt RIE technology between interdigital electrode, to etch away silicon nitride at last, adopt DRIE technology etch silicon then, form cavity 60,61,62; Wherein, 60,62 are first cavity on input and output tap line both sides, and 61 is second cavity between the interdigital finger, requires cavity perpendicular to substrate surface; The degree of depth is between the 20 μ m-200 μ m, shown in Fig. 4 C.
After the processing of dielectric layer and following dielectric layer, adopt the bonding of the method completion upper and lower medium layer of metal congruent melting wafer bonding in the completion, behind the bonding, metal level 57,59 congruent meltings form intermediate metal layer f3, shown in Fig. 5 A together.The preparation technology of upper and lower dielectric layer bonding postfilter is as shown in Figure 5.
Dielectric layer polishing attenuate on the wafer after adopting polishing wafer technology with bonding is with its reduced thickness to 50 μ m-250 μ m.Then; Adopt LPCVD or PECVD method deposition one deck silicon nitride film at bonding wafer upper surface, thickness is between the 100nm-1000nm, make via hole image by lithography after; Use the RIE method to etch away the through hole silicon nitride film; Etch through hole 63,64,65 at bonding wafer upper surface then, wherein 64 is grounding through hole, and 63,65 is the holding wire through hole.Adopt the RIE method to etch away the silicon nitride film of going up the dielectric layer lower surface in the through hole.After technology was accomplished, effect was shown in Fig. 5 B.
Make via hole image by lithography at bonding wafer lower surface, use the RIE method to etch away the through hole silicon nitride film, etch grounding through hole 66 at bonding wafer lower surface then.Adopt the RIE method to etch away the interior silicon nitride film of dielectric layer upper surface down of through hole.After technology was accomplished, effect was shown in Fig. 5 C.
Adopt method of evaporating at bonding wafer lower surface deposition one deck grounded metal electrode f5; Thickness is the 1-10 mu m range; Metal electrode can cover bonding wafer lower surface and lower surface through hole; Wherein 68 is electrode in the through hole, and it couples together bonding wafer lower surface grounding electrode and bonding wafer intermetallic metal grounding electrode.
Make input, output lead-out wire and ground wire electrode pattern by lithography at bonding wafer upper surface; Employing is peeled off then, sputtering method prepares input, export lead-out wire and ground wire electrode layer f1; Thickness is the 1-10 mu m range; Wherein 67 is through hole electrode, and it is with bonding wafer upper surface grounding electrode and bonding wafer intermetallic metal grounding electrode, and the input of bonding wafer upper surface, output signal line electrode and bonding wafer intermetallic metal tap line electrode couple together.
After above-mentioned technology is accomplished, adopt cutting-up technology that small mechanical filter wafer cutting-up is become small pieces, just accomplished the making of all-sealed structure small mechanical filter chip, effect is shown in Fig. 5 D.
The cavity one of following dielectric layer upper surface is positioned at input and output tap line both sides, and cavity two is between interdigital electrode finger, and cavity depth is less than thickness of dielectric layers.This filter upper and lower medium layer thickness is inconsistent, and one of them thickness of dielectric layers is thinner, and input, output signal line are positioned at the outer surface than film dielectric layer.The input/output signal line structure is microstrip line or co-planar waveguide line.The input/output signal line is connected through the dielectric layer through hole with intermetallic metal electrode layer interdigital filter input and output tap line.
The ground wire of the ground wire of last dielectric layer upper surface and intermetallic metal electrode layer is that the through hole through last dielectric layer is connected; The ground wire of the ground wire of following dielectric layer lower surface and intermetallic metal electrode layer is to be connected through the through hole that descends dielectric layer.Described dielectric layer or all be the High Resistivity Si dielectric material, or all be the quartz medium material, or the part dielectric layer be the High Resistivity Si dielectric material, all the other are the quartz medium layer material.Described filter adopts wafer scale bonding encapsulation technology, has all-sealed structure.
The above is merely the preferred embodiments of the present invention, is not limited to the present invention, and obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. all-sealed structure small mechanical filter is characterized in that: said filter comprises the last dielectric layer and following dielectric layer of stack up and down, is provided with the intermetallic metal electrode layer of the interdigital electrode of being with the tap signal line on said between dielectric layer and the following dielectric layer; The contacted dielectric layer upper surface down of said and intermetallic metal electrode layer is provided with first cavity with interdigital electrode tap signal line coupling; The contacted dielectric layer upper surface down of said and intermetallic metal electrode layer is provided with second cavity with interdigital electrode finger coupling; The said dielectric layer surface of going up is provided with dielectric layer upper surface metal level; Said dielectric layer lower face down is provided with down the dielectric layer lower surface metal layer; Also be provided with the through hole that matches with the intermetallic metal electrode layer on the said upper and lower dielectric layer, the said electrode of going up dielectric layer upper surface metal level is connected with the electrode of intermetallic metal electrode layer through through hole; The electrode of said dielectric layer lower surface metal layer down is connected with the electrode of intermetallic metal electrode layer through through hole; Any dielectric layer surface in the said upper and lower dielectric layer is provided with input, output signal line.
2. all-sealed structure small mechanical filter according to claim 1 is characterized in that: said intermetallic metal electrode layer, upward dielectric layer upper surface metal level and the making of following dielectric layer lower surface metal layer employing micromechanical process.
3. all-sealed structure small mechanical filter according to claim 1 is characterized in that: said through-hole wall preparation has metal level; Said first cavity and second cavity adopt the etching technics preparation.
4. according to each described all-sealed structure small mechanical filter of claim 1-3; It is characterized in that: said intermetallic metal electrode layer is based on the interdigital filter structure, and said intermetallic metal electrode layer comprises the first metal layer of the lower surface that is positioned at dielectric layer and is positioned at second metal level of the upper surface of dielectric layer down.
5. all-sealed structure small mechanical filter according to claim 4; It is characterized in that: said first cavity is positioned at interdigital electrode tap signal line both sides; Second cavity is between interdigital electrode finger, and the cavity depth of first cavity and second cavity is less than thickness of dielectric layers.
6. all-sealed structure small mechanical filter according to claim 5; It is characterized in that: said input, output signal line are arranged on the thin dielectric layer surface of upper and lower thickness of dielectric layers, and said input, output signal line are microstrip line or co-planar waveguide line.
7. all-sealed structure small mechanical filter according to claim 6 is characterized in that: the input and output tap line that said input/output signal line and intermetallic metal electrode layer are provided with is connected through the through hole of upper and lower dielectric layer.
8. all-sealed structure small mechanical filter according to claim 7 is characterized in that: the through hole that the said ground wire of going up the dielectric layer upper surface passes through last dielectric layer is connected with the ground wire of intermetallic metal electrode layer; The ground wire of said dielectric layer lower surface down passes through down, and the through hole of dielectric layer is connected with the ground wire of intermetallic metal electrode layer.
9. all-sealed structure small mechanical filter according to claim 8 is characterized in that: said upper and lower dielectric layer is High Resistivity Si dielectric material or quartz medium material.
10. all-sealed structure small mechanical filter according to claim 9 is characterized in that: said filter adopts wafer scale bonding encapsulation technology, has all-sealed structure.
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Cited By (3)
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| CN108206319A (en) * | 2017-12-05 | 2018-06-26 | 中国科学院微电子研究所 | A kind of suspension structure microwave filter and preparation method thereof |
| CN110635203A (en) * | 2019-08-26 | 2019-12-31 | 中国电子科技集团公司第十三研究所 | Waveguide filter |
| CN110635201A (en) * | 2019-08-26 | 2019-12-31 | 中国电子科技集团公司第十三研究所 | Comb filter |
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| SE2230199A1 (en) * | 2022-06-21 | 2023-12-22 | Trxmems Ab | A waveguide arrangement |
| SE546092C2 (en) * | 2022-06-21 | 2024-05-21 | Trxmems Ab | A multi-layer waveguide arrangement |
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