CN102820396A - Current diffusion layer, light emitting diode device and manufacturing method thereof - Google Patents
Current diffusion layer, light emitting diode device and manufacturing method thereof Download PDFInfo
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- CN102820396A CN102820396A CN2012102996963A CN201210299696A CN102820396A CN 102820396 A CN102820396 A CN 102820396A CN 2012102996963 A CN2012102996963 A CN 2012102996963A CN 201210299696 A CN201210299696 A CN 201210299696A CN 102820396 A CN102820396 A CN 102820396A
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Abstract
The invention discloses a light emitting diode device. The light emitting diode device comprises an epitaxial laminated layer and a current diffusion layer, wherein the epitaxial laminated layer is provided with a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence; the current diffusion layer is arranged on the first semiconductor layer of the epitaxial laminated layer; and the current diffusion layer is provided with a micro/nano coarsening structure and transparent conductive layers, wherein the micro/nano coarsening structure is provided with a plurality of hollow parts, and the transparent conductive layers cover the surface of the micro/nano coarsening structure and the hollow parts. In addition, the invention also discloses a manufacturing method for the light emitting diode device and the current diffusion layer with a micro-nanostructure.
Description
The application is to be that June 5, application number in 2007 are 200710108876.8, are entitled as the dividing an application of invention application of " current-diffusion layer, light-emitting diode assembly and manufacturing approach thereof " applying date.
Technical field
The present invention relates to a kind of light-emitting diode assembly and manufacturing approach thereof, particularly a kind of current-diffusion layer, light-emitting diode assembly and manufacturing approach thereof with micro nano structure.
Background technology
(light-emitting diode, LED) device is a kind of light-emitting component that is formed by semi-conducting material manufacturing to light-emitting diode.Because light-emitting diode assembly belongs to chemiluminescence; Have advantages such as power consumption is low, component life is long, reaction speed is fast; Add the little element of processing minimum or array easily of volume; Therefore, along with technology is constantly progressive, its range of application has contained the indicator light of computer or household appliances, backlight and even the traffic sign or the automobile-used indicator light of liquid crystal indicator in recent years.
Yet light-emitting diode assembly has still that electric current can't evenly spread, total reflection reduces light extraction efficiency or the like problem, and makes the luminous efficiency of light-emitting diode assembly still can't promote effectively.
Generally speaking, light-emitting diode assembly can be different aspects such as upside-down mounting chip, rectilinear or positive formula.In order to solve the problem that reduces light extraction efficiency because of total reflection; Please with reference to Fig. 1; With the vertical LED device is example, and light-emitting diode assembly 1 forms n N-type semiconductor N doped layer 121, luminescent layer (active layer) 122 and p N-type semiconductor N doped layer 123 in regular turn on the surface of substrate 11, then; On p N-type semiconductor N doped layer 123, form transparency conducting layer 13 again, and first electrode 14 and second electrode 15 are set respectively on the transparency conducting layer 13 and another surface of substrate 11.
As shown in Figure 1, the light output surface 131 of transparency conducting layer 13 can form coarse surface, reduces the situation generation of light output surface with the light total reflection thus, and can increase light taking-up efficient.
Please with reference to Fig. 2 A, the another kind of mode that solves the light extraction efficiency problem is provided with alligatoring structure 16 on the light output surface 131 of transparency conducting layer 13, and reduces the situation generation of light output surface with the light total reflection thus, and can increase light taking-up efficient.
In addition, also can directly on the surface of n N-type semiconductor N doped layer 121 or p N-type semiconductor N doped layer 123 (shown in Fig. 2 B), directly form coarse surface, and reduce the situation generation of light output surface thus, and can increase light taking-up efficient the light total reflection.
Hold the above,, still walk shortest path transmitting, and cause the problem that can't evenly spread yet its structure still exists because of electric current though known solution can solve the problem of total reflection.Therefore when increasing the light-emitting area of light-emitting diode assembly, still can cause electric current evenly to distribute.
Help because of in this, how to provide a kind of and can solve that electric current can't evenly spread and reduce the current-diffusion layer with micro nano structure, light-emitting diode assembly and the manufacturing approach thereof of light extraction efficiency, real one of the current important topic that belongs to because of total reflection.
Summary of the invention
Because above-mentioned problem, the object of the invention is to provide a kind of can reduce the light total reflection and can make equally distributed current-diffusion layer, light-emitting diode assembly and the manufacturing approach thereof with micro nano structure of electric current.
Therefore, for reaching above-mentioned purpose, the present invention provides a kind of current-diffusion layer with micro nano structure, and it comprises micro-nano alligatoring structure sheaf and transparency conducting layer.Current-diffusion layer is connected with semiconductor structure.Micro-nano alligatoring structure sheaf has a plurality of hollow-out parts.Transparency conducting layer is covered in the surface and these hollow-out parts of micro-nano alligatoring structure sheaf.
For reaching above-mentioned purpose, the present invention provides a kind of light-emitting diode assembly, and it comprises extension lamination and current-diffusion layer.Extension lamination has first semiconductor layer, luminescent layer and second semiconductor layer in regular turn.Current-diffusion layer is arranged on first semiconductor layer of extension lamination, and has micro-nano alligatoring structure sheaf and transparency conducting layer.Wherein, micro-nano alligatoring structure sheaf has a plurality of hollow-out parts, and transparency conducting layer is covered in the surface and these hollow-out parts of micro-nano alligatoring structure sheaf.
For reaching above-mentioned purpose, the present invention more provides a kind of manufacturing approach of light-emitting diode assembly, and it may further comprise the steps: form first semiconductor layer on epitaxial substrate; Form luminescent layer on first semiconductor layer; Form second semiconductor layer on luminescent layer; Remove the luminescent layer of part and second semiconductor layer of part, with first semiconductor layer of expose portion; Form micro-nano alligatoring structure sheaf on second semiconductor layer, wherein micro-nano alligatoring structure sheaf has a plurality of hollow-out parts; And form transparency conducting layer on micro-nano alligatoring structure sheaf and in these hollow-out parts.
In addition, for reaching above-mentioned purpose, the present invention more provides a kind of manufacturing approach of light-emitting diode assembly, and it may further comprise the steps: form first semiconductor layer on epitaxial substrate; Form luminescent layer on first semiconductor layer; Form second semiconductor layer on luminescent layer; Form micro-nano alligatoring structure sheaf on second semiconductor layer, wherein, micro-nano alligatoring structure sheaf has a plurality of hollow-out parts; And form a transparency conducting layer on micro-nano alligatoring structure sheaf and in these hollow-out parts.
Hold the above; Because of current-diffusion layer, light-emitting diode assembly and manufacturing approach utilization thereof according to tool micro nano structure of the present invention have the current-diffusion layer of micro nano structure and the fit applications of reflector, heat conductive insulating layer or heat conduction sticking layer; Possess the current-diffusion layer that good Ohmic connects face and on upside-down mounting chip, rectilinear or front light-emitting diode assembly, form, and reach according to this to make electric current evenly spread, reduce total reflection and increase light and take out characteristics such as efficient.
Description of drawings
Fig. 1 is the sketch map of known a kind of light-emitting diode assembly.
Fig. 2 A, 2B are the known sketch map of two kinds of light-emitting diode assemblies in addition.
Fig. 3 is the flow chart according to the manufacturing approach of the light-emitting diode assembly of first embodiment of the invention.
Fig. 4 A to Fig. 4 E is the sketch map that cooperates with the flow process of Fig. 3.
Fig. 5 is the flow chart according to the manufacturing approach of the light-emitting diode assembly of second embodiment of the invention.
Fig. 6 A to Fig. 6 E is the sketch map that cooperates with the flow process of Fig. 5.
Fig. 7 is the flow chart according to the manufacturing approach of the light-emitting diode assembly of third embodiment of the invention.
Fig. 8 A to Fig. 8 E is the sketch map that cooperates with the flow process of Fig. 7.
Fig. 9 is the flow chart according to the manufacturing approach of the light-emitting diode assembly of fourth embodiment of the invention.
Figure 10 A to Figure 10 F is the sketch map that cooperates with the flow process of Fig. 9.
Figure 11 is the sketch map of another kind of current-diffusion layer.
Description of reference numerals
1,20,30,40,50: light-emitting diode assembly
11: substrate
121:N type doped layer
122,213,313,413,513: luminescent layer
123:P type doped layer
13,222,322,422,522,622: transparency conducting layer
14,24,33,46,54: the first electrodes
15,25,34,47,55: the second electrodes
16: the alligatoring structure
21,31,41,51: extension lamination
211,311,411,511: epitaxial substrate
212,312,412,512: the first semiconductor layers
214,314,414,514: the second semiconductor layers
22,32,42,52: current-diffusion layer
221,321,421,521,621: micro-nano alligatoring structure sheaf
23,37: the heat conductive insulating layer
35,45,56: heat-conducting substrate
36,44,57: heat conduction sticking layer
38,43,53: the reflector
5: light emitting diode construction
58: transparent substrates
H21, H31, H41, H51: hollow-out parts
Embodiment
Below will the current-diffusion layer with micro nano structure, light-emitting diode assembly and manufacturing approach thereof according to the preferred embodiment of the present invention be described with reference to relevant indicators.
[first embodiment]
Please with reference to Fig. 3, comprise that according to the manufacturing approach of a kind of light-emitting diode assembly 20 of first embodiment of the invention step S11 is to step S15.Below please be simultaneously with reference to shown in Fig. 4 A to Fig. 4 E.
Shown in Fig. 4 A, step S 11 is for forming extension lamination 21 on epitaxial substrate 211, and wherein, extension lamination 21 comprises first semiconductor layer 212, luminescent layer 213 and second semiconductor layer 214.First semiconductor layer 212 is formed on the epitaxial substrate 211, then on first semiconductor layer 212, forms luminescent layer 213; Then on luminescent layer 213, form second semiconductor layer 214.Then, shown in Fig. 4 B, step S12 removes the luminescent layer 213 of part and second semiconductor layer 214 of part.
Shown in Fig. 4 C, step S 13 is connected current-diffusion layer 22 with extension lamination 21.In the present embodiment; Forming micro-nano alligatoring structure sheaf 221 such as but not limited to piling up technology, sintering process, anodised aluminium technology (AAO), nano-imprint process, heat pressing process, etch process or electron beam exposure technology (E-beam writer), and micro-nano alligatoring structure sheaf 221 has a plurality of hollow-out parts H21 to current-diffusion layer 22 on second semiconductor layer 214.Wherein, on micro-nano alligatoring structure sheaf 221 and among these hollow-out parts H21, be formed with transparency conducting layer 222.
In the present embodiment, first semiconductor layer 212 and second semiconductor layer 214 can be respectively P type epitaxial loayer and N type epitaxial loayer, and it is also interchangeable certainly, does not limit at this.The refractive index of micro-nano alligatoring structure sheaf 221 is greater than the refractive index of air and less than the refractive index of extension lamination.And according to the difference of its outward appearance, micro-nano alligatoring structure sheaf 221 can comprise nanosphere, nano-pillar, nano aperture, nano dot, nano wire or nano concavo-convex structure at least, is example with the nanosphere at this, and its material can be selected from alundum (Al (Al
2O
3), silicon nitride (Si
3N
4), tin ash (SnO
2), silicon dioxide (SiO
2), the group that constituted of resin, Merlon (polycarbonate) and combination thereof.The material of transparency conducting layer 222 can comprise indium tin oxide (Indium tin oxide, ITO), Al-Doped ZnO (aluminum doped zinc oxide, AZO) or indium-zinc oxide (indium zinc oxide, IZO).
Shown in Fig. 4 D, step S14 forms first electrode 24 that electrically connects with first semiconductor layer 212 respectively, and second electrode 25 of formation and 214 electric connections of second semiconductor layer.
Shown in Fig. 4 E, step S15 is for forming heat conductive insulating layer 23 on the current-diffusion layer 22 of part, in order to provide light-emitting diode assembly better antistatic effect.Even, but heat conductive insulating layer also second semiconductor layer 214, luminescent layer 213 and first semiconductor layer 212 of cover part, to accomplish a kind of light-emitting diode assembly with micro nano structure 20 of positive formula element.
In the present embodiment, its step is not limited in this order, and it can carry out the transposing of step according to the needs of technology.
[second embodiment]
Please with reference to Fig. 5, comprise that according to the manufacturing approach of a kind of light-emitting diode assembly 30 of second embodiment of the invention step S21 is to step S27.Below please be simultaneously with reference to Fig. 6 A to Fig. 6 F.
Shown in Fig. 6 A, step S21 is identical with the step S11 of first embodiment, and it forms extension lamination 31 on epitaxial substrate 311.Wherein, extension lamination 31 comprises first semiconductor layer 312, luminescent layer 313 and second semiconductor layer 314.First semiconductor layer 312 is formed on the epitaxial substrate 311, then on first semiconductor layer 312, forms luminescent layer 313; Then on luminescent layer 313, form second semiconductor layer 314.
Step S22 is connected current-diffusion layer 32 with extension lamination 31.In the present embodiment; Forming micro-nano alligatoring structure sheaf 321 such as but not limited to piling up technology, sintering process, anodised aluminium technology (AAO), nano-imprint process, heat pressing process, etch process or electron beam exposure technology (E-beam writer), and micro-nano alligatoring structure sheaf 321 has a plurality of hollow-out parts H31 to current-diffusion layer 32 on second semiconductor layer 314.Wherein, on micro-nano alligatoring structure sheaf 321 and among these hollow-out parts H31, be formed with transparency conducting layer 322.
Shown in Fig. 6 B, step S23 for form in regular turn heat conduction sticking layer 36 on the heat-conducting substrate 35, form heat conductive insulating layer 37 on the heat conduction sticking layer 36 and form reflector 38 on heat conductive insulating layer 37.
In the present embodiment, the material of heat-conducting substrate 35 can be selected from silicon, GaAs, gallium phosphide, carborundum, boron nitride, aluminium, aluminium nitride, copper and group that combination constituted thereof.Heat conduction sticking layer 36 combines the usefulness of heat conductive insulating layers 37 and heat-conducting substrate 35, and its material can be selected from gold, tin cream, tin silver paste, silver paste and group that combination constituted thereof.
Heat conductive insulating layer 37 can be avoided extension lamination 31 to see through heat-conducting substrate 35 and electrically conduct with the external world; And the material of heat conductive insulating layer 37 is the insulating material of the coefficient of heat conduction more than or equal to 150W/mK (watts/meter Degree Kelvin), for example is aluminium nitride or carborundum etc.In addition, the refractive index of heat conductive insulating layer 37 is between the refractive index (being about 1) of the refractive index (being about 2.5) of extension lamination 31 and air.
Shown in Fig. 6 C, step S24 is for combining the transparency conducting layer 322 of reflector 38 and current-diffusion layer 32.Shown in Fig. 6 D, step S25 overturns at the formed light-emitting diode assembly 30 of step S21, and removes epitaxial substrate 311 for another example.
Shown in Fig. 6 E, step S26 is first semiconductor layer 312 that removes part, the luminescent layer 313 of part and second semiconductor layer 314 of part, with the micro-nano alligatoring structure sheaf 321 of expose portion.In the present embodiment, second semiconductor layer 314 of the luminescent layer 313 of first semiconductor layer 312 of part, part and part is to remove with the mode such as but not limited to dry ecthing.
Then; Step S27 forms first electrode 33 that electrically connects with micro-nano alligatoring structure sheaf 321 respectively; And form second electrode 34 that electrically connects with second semiconductor layer 314, to constitute the light-emitting diode assembly with micro nano structure 30 of another kind of positive formula element.In the present embodiment, its step is not limited in this order, and it can carry out the transposing of step according to the needs of technology.
[the 3rd embodiment]
Please with reference to Fig. 7, comprise that according to the manufacturing approach of a kind of light-emitting diode assembly of third embodiment of the invention step S31 is to step S36.Below please be simultaneously with reference to Fig. 8 A to Fig. 8 E.
Shown in Fig. 8 A, step S31 is identical with the step S11 of first embodiment, and it forms extension lamination 41 on epitaxial substrate 111.Wherein, extension lamination 41 comprises first semiconductor layer 412, luminescent layer 413 and second semiconductor layer 414.First semiconductor layer 412 is formed on the epitaxial substrate 411, then on first semiconductor layer 412, forms luminescent layer 413; Then on luminescent layer 413, form second semiconductor layer 414.
Step S32 is connected current-diffusion layer 42 with extension lamination 41.In the present embodiment; Forming micro-nano alligatoring structure sheaf 421 such as but not limited to piling up technology, sintering process, anodised aluminium technology (AAO), nano-imprint process, heat pressing process, etch process or electron beam exposure technology (E-beam writer), and micro-nano alligatoring structure sheaf 421 has a plurality of hollow-out parts H41 to current-diffusion layer 42 on second semiconductor layer 414.Wherein, on micro-nano alligatoring structure sheaf 421 and among these hollow-out parts H41, be formed with transparency conducting layer 422.
Shown in Fig. 8 B, step S33 is for forming reflector 43 on the transparency conducting layer 422 of current-diffusion layer 42.Shown in Fig. 8 C, step S34 is for passing through heat conduction sticking layer 44 combination reflector 43 and heat-conducting substrates 45.
Shown in Fig. 8 D, step S35 overturns at the formed light-emitting diode assembly 40 of step S34, and removes epitaxial substrate 411.For another example shown in Fig. 8 E; Step S35 is for forming first electrode 46 respectively on first semiconductor layer 412; And form second electrode 47 in the surface of heat-conducting substrate 45 with respect to heat conduction sticking layer 44, with the light-emitting diode assembly 40 of the tool micro nano structure that constitutes a kind of rectilinear element.
In the present embodiment, wherein the material of each layer is all identical with the described material of the foregoing description, so no longer give unnecessary details at this.In addition, the step of present embodiment is not limited in this order, and it can carry out the transposing between step according to the needs of technology.
[the 4th embodiment]
Please with reference to Fig. 9, comprise that according to the manufacturing approach of a kind of light-emitting diode assembly 50 of fourth embodiment of the invention step S41 is to step S47.Below please be simultaneously with reference to Figure 10 A to Figure 10 F.
Shown in Figure 10 A, step S41 is identical with the step S 11 of first embodiment, and it forms extension lamination 51 on epitaxial substrate 511.Wherein, extension lamination 51 comprises first semiconductor layer 512, luminescent layer 513 and second semiconductor layer 514.First semiconductor layer 512 is formed on the epitaxial substrate 511, then on first semiconductor layer 512, forms luminescent layer 513; Then on luminescent layer 513, form second semiconductor layer 514.
In the present embodiment; Forming micro-nano alligatoring structure sheaf 521 such as but not limited to piling up technology, sintering process, anodised aluminium technology (AAO), nano-imprint process, heat pressing process, etch process or electron beam exposure technology (E-beam writer), and micro-nano alligatoring structure sheaf 521 has a plurality of hollow-out parts H51 to current-diffusion layer 52 on second semiconductor layer 514.Wherein, on micro-nano alligatoring structure sheaf 521 and among these hollow-out parts H51, be formed with transparency conducting layer 522.
Shown in Figure 10 B, step S43 is the transparency conducting layer 522 that removes part, the micro-nano alligatoring structure sheaf 521 of part, second semiconductor layer 514 of part and the luminescent layer 513 of part, with first semiconductor layer 512 of expose portion.
Shown in Figure 10 C, step S44 electrically connects with the reflector 53 and second semiconductor layer 514 respectively for forming reflector 53 covering transparency conducting layers 522, formation first electrode pair 54 in regular turn.
Shown in Figure 10 D, step S45 is the reduced thickness with epitaxial substrate 511, make it form transparent substrates 58 after, form light emitting diode construction 5.
Shown in Figure 10 E, step S46 overturns at the formed light emitting diode construction 5 of step S45 for forming second electrode pair 55 on heat-conducting substrate 56, and first electrode pair 54 and second electrode pair 55 are oppositely arranged.
Shown in Figure 10 F, step S47 is for forming heat conduction sticking layer 57 between first electrode pair 54 and second electrode pair 55, to constitute a kind of light-emitting diode assembly with micro nano structure 50 of upside-down mounting chip component.
In the present embodiment, wherein the material of each layer is all identical with the described material of the foregoing description, so no longer give unnecessary details at this.In addition, the step of present embodiment is not limited in this order, and it can carry out the transposing between step according to the needs of technology.
In addition, the micro-nano concaveconvex structure that the current-diffusion layer of the foregoing description also can be shown in figure 11, it also is made up of micro-nano alligatoring structure sheaf 521 and 522 of transparency conducting layers.
In sum; Current-diffusion layer, light-emitting diode assembly and the manufacturing approach thereof of the tool micro nano structure that the present invention disclosed; Its utilization has the current-diffusion layer of micro nano structure and the fit applications of reflector, heat conductive insulating layer or heat conduction sticking layer; Possesses the current-diffusion layer that good Ohmic connects face and on upside-down mounting chip, rectilinear or front light-emitting diode assembly, form; And can make light reach good scattering, and reach according to this to make electric current evenly spread, reduce total reflection and increase light and take out characteristics such as efficient through micro-nano alligatoring structure.
The above is merely illustrative, but not is restricted person.Anyly do not break away from spirit of the present invention and category, and, all should be contained in the appended claim its equivalent modifications of carrying out or change.
Claims (15)
1. light-emitting diode assembly comprises:
Extension lamination has first semiconductor layer, luminescent layer and second semiconductor layer in regular turn; And
Current-diffusion layer; Link with this extension lamination; This current-diffusion layer has micro-nano alligatoring structure sheaf and transparency conducting layer, and this micro-nano alligatoring structure sheaf has a plurality of hollow-out parts, and this transparency conducting layer is covered in surface and these hollow-out parts of this micro-nano alligatoring structure sheaf.
2. light-emitting diode assembly as claimed in claim 1, wherein this first semiconductor layer is P type epitaxial loayer or N type epitaxial loayer, and this second semiconductor layer is N type epitaxial loayer or P type epitaxial loayer.
3. light-emitting diode assembly as claimed in claim 2, some of these first semiconductor layers are exposed to this second semiconductor layer and this luminescent layer, and this light-emitting diode assembly also comprises:
The reflector is connected with the surface of this current-diffusion layer with respect to this second semiconductor layer; And
First electrode pair is arranged at this reflector and this first semiconductor layer respectively.
4. light-emitting diode assembly as claimed in claim 3, it also comprises:
Heat-conducting substrate;
Second electrode pair is arranged at respectively on this heat-conducting substrate, and establishes relatively with this first electrode pair; And
Heat conduction sticking layer is arranged between this first electrode pair and this second electrode pair.
5. light-emitting diode assembly as claimed in claim 3; Also comprise epitaxial substrate; It is arranged at this first semiconductor layer with respect on the surface of this luminescent layer and in order to carry this extension lamination, and attenuate after the thickness of this epitaxial substrate forms in this reflector makes it form transparent substrates.
6. light-emitting diode assembly as claimed in claim 2, it also comprises:
Heat-conducting substrate;
Heat conduction sticking layer is arranged on this heat-conducting substrate;
The heat conductive insulating layer is arranged on this adhered layer; And
The reflector is arranged on this heat conductive insulating layer, and is connected with the surface of this current-diffusion layer with respect to this second semiconductor layer.
7. light-emitting diode assembly as claimed in claim 6, wherein the material of this heat conductive insulating layer is the insulating material of the coefficient of heat conduction more than or equal to 150W/mK (watts/meter Degree Kelvin), like aluminium nitride or carborundum.
8. light-emitting diode assembly as claimed in claim 6, the wherein refractive index of the refractive index＞air of the refractive index of this extension lamination＞this heat conductive insulating layer.
9. light-emitting diode assembly as claimed in claim 6, it also comprises first electrode and second electrode, it is arranged at respectively on first semiconductor layer and this current-diffusion layer, and some of this current-diffusion layer is exposed to this extension lamination.
10. light-emitting diode assembly as claimed in claim 2; Also comprise epitaxial substrate, first electrode and second electrode; And this of this extension lamination first semiconductor layer, this luminescent layer and this second semiconductor layer are formed on this epitaxial substrate in regular turn, and this first electrode electrically is connected with this first semiconductor layer of part and this transparency conducting layer of part respectively with this second electrode.
11. light-emitting diode assembly as claimed in claim 2 also comprises:
Heat-conducting substrate;
Heat conduction sticking layer is arranged at this heat-conducting substrate;
The reflector is arranged at this heat conduction sticking layer, and is connected with respect to this first semi-conductive surface with this current-diffusion layer;
First electrode is arranged at this first semiconductor layer; And
Second electrode is arranged at the surface of this heat-conducting substrate with respect to this heat conduction sticking layer.
12. like claim 4,6 or 11 described light-emitting diode assemblies; Wherein the material of this heat-conducting substrate is selected from silicon, GaAs, gallium phosphide, carborundum, boron nitride, aluminium, aluminium nitride, copper and group that combination constituted thereof, and the material of this heat conduction sticking layer is selected from gold, tin cream, tin silver paste, silver paste and group that combination constituted thereof.
13. like claim 3,6 or 11 described light-emitting diode assemblies; Wherein the material in this reflector is selected from platinum, gold, silver, palladium, nickel, chromium, titanium and group that combination constituted thereof, and this reflector serve as reasons optical reflection element, metallic reflector, metal and dielectric reflector that dielectric medium film with high low-refraction formed or the optical reflection element of being made up of micro-nano ball.
14. light-emitting diode assembly as claimed in claim 2, wherein the material of this transparency conducting layer of this current-diffusion layer comprises indium tin oxide, Al-Doped ZnO or indium-zinc oxide.
15. light-emitting diode assembly as claimed in claim 1; Wherein the material of this micro-nano alligatoring structure sheaf is selected from alundum (Al, silicon nitride, tin ash, silicon dioxide, resin, Merlon and group that combination constituted thereof, and this micro-nano alligatoring structure sheaf forms to pile up technology, sintering process, anodised aluminium technology, nano-imprint process, heat pressing process, etch process or electron beam exposure technology.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102996963A CN102820396A (en) | 2007-06-05 | 2007-06-05 | Current diffusion layer, light emitting diode device and manufacturing method thereof |
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|---|---|---|---|
| CN2012102996963A CN102820396A (en) | 2007-06-05 | 2007-06-05 | Current diffusion layer, light emitting diode device and manufacturing method thereof |
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| CN200710108876A Division CN101320766B (en) | 2007-06-05 | 2007-06-05 | Current-diffusing layer, LED device and its preparing process |
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| WO2015070669A1 (en) * | 2013-11-14 | 2015-05-21 | 厦门市三安光电科技有限公司 | Light-emitting diode chip and manufacturing method therefor |
| CN109980091A (en) * | 2019-04-04 | 2019-07-05 | 吉林大学 | A kind of Preparation method and use growing ZnO self-assembled nano structures |
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| US20050205875A1 (en) * | 2004-03-17 | 2005-09-22 | Shih-Chang Shei | Light-emitting diode |
| US20060006407A1 (en) * | 2004-07-09 | 2006-01-12 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor device and method of manufacturing the same |
| CN1731592A (en) * | 2005-08-26 | 2006-02-08 | 杭州士兰明芯科技有限公司 | Flip-chip bonded structure light-emitting diode and its manufacture method |
| US20070080361A1 (en) * | 2005-09-28 | 2007-04-12 | Osram Opto Semiconductor Gmbh | Optoelectronic semiconductor chip, method for producing it, and optoelectronic device |
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| WO2015070669A1 (en) * | 2013-11-14 | 2015-05-21 | 厦门市三安光电科技有限公司 | Light-emitting diode chip and manufacturing method therefor |
| CN109980091A (en) * | 2019-04-04 | 2019-07-05 | 吉林大学 | A kind of Preparation method and use growing ZnO self-assembled nano structures |
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Application publication date: 20121212 |