CN102820377A - Solar cell production process - Google Patents
Solar cell production process Download PDFInfo
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- CN102820377A CN102820377A CN2012103065418A CN201210306541A CN102820377A CN 102820377 A CN102820377 A CN 102820377A CN 2012103065418 A CN2012103065418 A CN 2012103065418A CN 201210306541 A CN201210306541 A CN 201210306541A CN 102820377 A CN102820377 A CN 102820377A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a solar cell production process which includes the working procedures of primary cleaning, diffusion, etching, secondary cleaning, PEVCD (plasma-enhanced chemical vapor deposition), screen printing and test sorting. By the solar cell production process, performances of conversion efficiency, power and the like of solar cells can be improved, production cost is reduced, and superior overall economic benefit is achieved.
Description
Technical field
The present invention relates to the production technology of solar battery sheet, belong to the production and processing technical field of solar cell.
Background technology
Solar cell is a kind of luminous energy directly to be changed into the device of electric energy, because its cleaning, pollution-free is inexhaustible, becomes a kind of important generation mode gradually.The principle of solar cell power generation is to utilize the photovoltaic effect of PN junction that opto-electronic conversion is become electric energy.According to the electricity generating principle of solar battery sheet, the manufacturing process steps of solar battery sheet is generally following: 1, making herbs into wool, silicon chip surface is corroded the pattern of pyramid; 2, diffusion, silicon chip surface forms PN junction; 3, etching is removed the PN junction of silicon chip edge, prevents battery short circuit; 4, cleaning silicon chip surface; 5, PECVD is at silicon chip surface plating one deck antireflective coating; 6, printing sintering prints electrode and carries on the back the field, and the oven dry sintering; 7, testing, sorting carries out performance test with the silicon chip after the silkscreen process, and to the silicon chip branch a plurality of grades of hanking after the test.Yet; Because the concrete steps in each operation of production technology of existing solar battery sheet are more unreasonable with each step parameter; Performances such as the conversion efficiency of the solar battery sheet that feasible production obtains, power, cost are more undesirable, and and then cause photovoltaic industry to run into the bottleneck of development.Therefore how to improve the concrete steps and each step parameter of each operation in the production technology of solar battery sheet, improve the performance of solar battery sheet, become the problem that industry needs to be resolved hurrily.
Summary of the invention
The objective of the invention is to, a kind of production technology of solar battery sheet is provided.The present invention not only can improve performances such as conversion efficiency and the power of solar battery sheet, and has reduced production cost, has superior whole economic efficiency.
Technical scheme of the present invention: a kind of production technology of solar battery sheet, this method specifically comprises following operation:
A, a matting; Silicon chip is carried out making herbs into wool earlier, remove metal ion again, at last silicon chip is removed the oxide on silicon face surface;
B, diffusing procedure; Silicon chip after matting is moved in the quartz boat groove, quartz boat groove end is spread to the carborundum oar with the boat fork;
C, etching procedure; Become one to be assembled on the etching anchor clamps silicon chip behind the polylith diffusing procedure, again the etching anchor clamps are put into the etching machine and carry out etching;
D, secondary cleaning operation; The silicon chip that etching procedure is intact carries out surperficial dephosphorization and cleans, and with deionized water silicon chip is carried out rinsing again;
E, PEVCD operation; Silicon chip after the secondary cleaning operation is put into graphite boat, graphite boat is sent in the processing cavity of PECVD filming equipment and carried out plated film;
F, silkscreen process; Silicon chip after the PEVCD operation put into carry out silk screen printing on the silicon chip printing machine, carrying out silk screen printing is to carry out the back electrode printing earlier, then oven dry; The electric field printing is carried on the back to silicon chip in the oven dry back; The positive electrode printing is then carried out in oven dry again, silicon chip is sent into carried out sintering in the sintering furnace at last;
G, testing, sorting operation; Silicon chip after the silkscreen process is carried out performance test, and to the silicon chip branch a plurality of grades of hanking after the test.
In the production technology of above-mentioned solar battery sheet; In the described matting; It is earlier silicon chip to be inserted in the 160L pure water that silicon chip is carried out making herbs into wool earlier, in pure water, drops into 2.0-2.7kg NaOH again, reacts after 60 seconds; Add 6-7L isopropyl alcohol and 1L making herbs into wool additive then in the solution, react after 1200 seconds a making herbs into wool operation end in the matting.
In the production technology of aforesaid solar battery sheet, in the described matting, it is that silicon chip is dropped into concentration is that rinsing goes the metal ion operation to finish in 15% the hydrochloric acid solution after 300 seconds that the silicon chip that making herbs into wool is intact removes metal ion; , it is that silicon chip is dropped into concentration is in 15% the hydrofluoric acid solution that the silicon chip after going metal ion to finish is removed the oxide on silicon face surface, rinsing after 300 seconds deoxidation thing operation finish.
In the production technology of aforesaid solar battery sheet; In the described diffusing procedure, may further comprise the steps successively: advance boat 10 minutes, the oxidation 10 minutes of rising again, in advance put deposit 12 minutes, heat up 15 minutes, in advance push away trap 3 minutes, push away trap 14 minutes, cooling 10 minutes, went out boat 10 minutes.
In the production technology of aforesaid solar battery sheet, in the described etching procedure, may further comprise the steps successively; Forvacuum 120s, main 100s, the feeding O of vacuumizing
2And CF
4Voltage stabilizing 20s, glow discharge 1200s, feed O again
240s, extract remaining 60-100s, nitrogen back pressure 60s.
In the production technology of aforesaid solar battery sheet, described secondary cleaning operation; It is to leave standstill 8-16 minute in 20% the hydrofluoric acid solution that the silicon chip that etching procedure is intact drops into concentration, carries out surperficial dephosphorization and cleans.
In the production technology of aforesaid solar battery sheet, in the described PEVCD operation, the parameter setting of PECVD filming equipment is: the feeding flow of SiH4 is 0.75L/min, and the feeding flow of NH3 is 6.3L/min; The required pressure of coating is 200pa, and it is 200pa that technology is opened required pressure; The heater heats temperature is 440-480 ℃, and be 2400-3000s heating time; The transmission speed of silicon chip is 800-1000mm/min.
In the production technology of aforesaid solar battery sheet, in the described silkscreen process, the parameter of each concrete steps is following;
The parameter of backplate printing is that print speed printing speed is 300mm/s, and scraper plate pressure is 4-6kg, silk screen spacing 1.3-1.8mm;
The parameter of backplate oven dry is that oven temperature is 220 ℃, and the baking oven belt speed is 4000-4200mm/s;
The parameter of back surface field printing is that print speed printing speed is 220-280mm/s, and scraper plate pressure is 4-7kg, silk screen spacing 1.8-2.8mm;
The parameter of back surface field oven dry is that oven temperature is 180 ℃, and the baking oven belt speed is 4000-4200mm/s;
The positive electrode printing parameter is that print speed printing speed is 250-280mm/s, scraper plate pressure 4-6kg, silk screen spacing 1.2-1.8mm;
The parameter of sintering furnace is that belt speed is 190ipm, comprises 9 warm areas in the sintering furnace, and each warm area is 310 ℃, 320 ℃, 320 ℃, 450 ℃, 540 ℃, 600 ℃, 680 ℃, 840 ℃, 890 ℃ from front to back.
Compared with prior art, the solar battery sheet that obtains of this technology has following characteristics:
One, the up-to-date diffusion technology flow process of this process using, the conventional diffusion uniformity has only about 10%, and side's resistance uniformity of this diffusion technology can be controlled in 5%, has improved the limitation of efficient greatly, has fundamentally improved efficient.And from the production cost of diffusion, the flow of this technology nitrogen, POCl3 has only 1/5 of traditional handicraft, has significantly reduced production cost.
Two, the reflectivity on polished silicon surface is 35%, in order to reduce surface reflection, improves the conversion efficiency of battery, needs deposition one deck silicon nitride antireflective coating.The effect of PECVD operation is a plasma enhanced chemical vapor deposition.Its know-why is to utilize low temperature plasma to make energy source, and sample places on the negative electrode of glow discharge under the low pressure, utilizes glow discharge to make sample be warmed up to predetermined temperature, feeds an amount of reacting gas SiH then
4And NH
3, gas is through series of chemical and plasma reaction, and forming solid film at sample surfaces is silicon nitride film.Adopt PEVCD working procedure parameter of the present invention, the film thickness that can make deposition is about 70nm.The film of thickness has the functional of optics like this.Utilize the film interference principle, reflection of light is greatly reduced, the short circuit current of battery just has very big increase with output, and efficient also has suitable raising.
Three, after the operations such as silicon chip process making herbs into wool, diffusion and PECVD, processed PN junction, can under illumination, produce electric current,, need on battery surface, make positive and negative two electrodes for the electric current that produces is derived.The method of making electrode is a lot, and silk screen printing is to make the most general a kind of production technology of solar cel electrode at present.Silk screen printing be adopt the mode of impression with predetermined graphic printing on substrate, this equipment prints three parts by the printing of cell backside silver aluminium paste, the printing of cell backside aluminium paste and cell front side silver paste and forms.Its operation principle is: utilize silk screen visuals mesh to see through slurry, apply certain pressure with scraper at the slurry position of silk screen, move towards the silk screen other end simultaneously.Printing ink is expressed on the substrate from the mesh of visuals by scraper in moving.Because the viscous effect of slurry makes the trace set within the specific limits, the printing middle scraper is linear with screen printing forme and substrate all the time and contact, and contact wire moves with scraper and mobile, thus the completion print stroke.The new low point live width of this process using, the positive silver-colored half tone of multiple-grid line design is compared with the positive silver-colored unit consumption of traditional 0.095g/ piece, our technology can be saved 1/4 silver medal slurry, bigger saving production cost.
Four, through test; Adopt the solar battery sheet conversion efficiency of this explained hereafter to compare with the solar battery sheet efficient that traditional handicraft is produced; The battery sheet efficient that the present invention produces can be higher than the conversion efficiency of the solar battery sheet of existing processes production far away more than 18.6%.
Embodiment
Below in conjunction with embodiment the present invention is further described, but not as the foundation to the present invention's restriction.
Embodiment 1: the production technology of solar battery sheet, and this method specifically comprises following operation:
A, a matting; Silicon chip is carried out making herbs into wool earlier, remove metal ion again, at last silicon chip is removed the oxide on silicon face surface; It is described that silicon chip is carried out making herbs into wool is earlier silicon chip to be inserted in the 160L pure water; In pure water, drop into 2.0-2.7kg NaOH again; React after 60 seconds, add 6-7L isopropyl alcohol and 1L making herbs into wool additive then in the solution, react after 1200 seconds a making herbs into wool operation end in the matting.The intact silicon chip of making herbs into wool also need remove metal ion, and removing metal ion is that silicon chip is dropped into concentration is that rinsing goes the metal ion operation to finish in 15% the hydrochloric acid solution after 300 seconds; , it is that silicon chip is dropped into concentration is in 15% the hydrofluoric acid solution that the silicon chip after going metal ion to finish is removed the oxide on silicon face surface, rinsing after 300 seconds deoxidation thing operation finish.
B, diffusing procedure; Silicon chip after matting is moved in the quartz boat groove, quartz boat groove end is spread to the carborundum oar with the boat fork; May further comprise the steps successively and parameter in the diffusing procedure: advance boat 10 minutes, the oxidation 10 minutes of rising again, in advance put deposit 12 minutes, heat up 15 minutes, in advance push away trap 3 minutes, push away trap 14 minutes, cooling 10 minutes, went out boat 10 minutes.Above-mentioned advance conventional step in the diffusing procedure that step such as boat is a solar battery sheet; Those of ordinary skills can accomplish diffusing procedure of the present invention from the step of preceding text and the parameter of each step, so the concrete operation method of each step repeats no more at this.
C, etching procedure; Become one to be assembled on the etching anchor clamps silicon chip behind the polylith diffusing procedure, again the etching anchor clamps are put into the etching machine and carry out etching; May further comprise the steps successively and parameter in the etching procedure: forvacuum 120s, main 100s, the feeding O of vacuumizing
2And CF
4Voltage stabilizing 20s, glow discharge 1200s, feed O again
240s, extract remaining 60-100s, nitrogen back pressure 60s.Above-mentioned steps such as forvacuum are steps conventional in the etching procedure of solar battery sheet; Those of ordinary skills can accomplish etching procedure of the present invention from the step of preceding text and the parameter of each step, so the concrete operation method of each step repeats no more at this.
D, secondary cleaning operation; The silicon chip that etching procedure is intact carries out surperficial dephosphorization and cleans, and with deionized water silicon chip is carried out rinsing again; Described surperficial dephosphorization clean be the silicon chip that etching procedure is intact to drop into concentration be to leave standstill 8-16 minute in 20% the hydrofluoric acid solution, carry out surperficial dephosphorization and clean.
E, PEVCD operation; Silicon chip after the secondary cleaning operation is put into graphite boat, graphite boat is sent in the processing cavity of PECVD filming equipment and carried out plated film; The parameter setting of PECVD filming equipment is in the described PEVCD operation: SiH
4The feeding flow be 0.75L/min, NH
3The feeding flow be 6.3L/min; The required pressure of coating is 200pa, and it is 200pa that technology is opened required pressure; The heater heats temperature is 440-480 ℃, and be 2400-3000s heating time; The transmission speed of silicon chip is 800-1000mm/min.
F, silkscreen process; Silicon chip after the PEVCD operation put into carry out silk screen printing on the silicon chip printing machine, carrying out silk screen printing is to carry out the back electrode printing earlier, then oven dry; The electric field printing is carried on the back to silicon chip in the oven dry back; The positive electrode printing is then carried out in oven dry again, silicon chip is sent into carried out sintering in the sintering furnace at last; The parameter of each step of this silkscreen process is following:
The parameter of backplate printing is that print speed printing speed is 300mm/s, and scraper plate pressure is 4-6kg, silk screen spacing 1.3-1.8mm;
The parameter of backplate oven dry is that oven temperature is 220 ℃, and the baking oven belt speed is 4000-4200mm/s;
The parameter of back surface field printing is that print speed printing speed is 220-280mm/s, and scraper plate pressure is 4-7kg, silk screen spacing 1.8-2.8mm;
The parameter of back surface field oven dry is that oven temperature is 180 ℃, and the baking oven belt speed is 4000-4200mm/s;
The positive electrode printing parameter is that print speed printing speed is 250-280mm/s, scraper plate pressure 4-6kg, silk screen spacing 1.2-1.8mm;
The parameter of sintering furnace is that belt speed is 190ipm, comprises 9 warm areas in the sintering furnace, and each warm area is 310 ℃, 320 ℃, 320 ℃, 450 ℃, 540 ℃, 600 ℃, 680 ℃, 840 ℃, 890 ℃ from front to back.
G, testing, sorting operation; Silicon chip after the silkscreen process is carried out performance test, and to the silicon chip branch a plurality of grades of hanking after the test.
Claims (8)
1. the production technology of solar battery sheet, it is characterized in that: this method specifically comprises following operation:
A, a matting; Silicon chip is carried out making herbs into wool earlier, remove metal ion again, at last silicon chip is removed the oxide on silicon face surface;
B, diffusing procedure; Silicon chip after matting is moved in the quartz boat groove, quartz boat groove end is spread to the carborundum oar with the boat fork;
C, etching procedure; Become one to be assembled on the etching anchor clamps silicon chip behind the polylith diffusing procedure, again the etching anchor clamps are put into the etching machine and carry out etching;
D, secondary cleaning operation; The silicon chip that etching procedure is intact carries out surperficial dephosphorization and cleans, and with deionized water silicon chip is carried out rinsing again;
E, PEVCD operation; Silicon chip after the secondary cleaning operation is put into graphite boat, graphite boat is sent in the processing cavity of PECVD filming equipment and carried out plated film;
F, silkscreen process; Silicon chip after the PEVCD operation put into carry out silk screen printing on the silicon chip printing machine, carrying out silk screen printing is to carry out the back electrode printing earlier, then oven dry; The electric field printing is carried on the back to silicon chip in the oven dry back; The positive electrode printing is then carried out in oven dry again, silicon chip is sent into carried out sintering in the sintering furnace at last;
G, testing, sorting operation; Silicon chip after the silkscreen process is carried out performance test, and to the silicon chip branch a plurality of grades of hanking after the test.
2. the production technology of solar battery sheet according to claim 1; It is characterized in that: in the described matting; It is earlier silicon chip to be inserted in the 160L pure water that silicon chip is carried out making herbs into wool earlier, in pure water, drops into 2.0-2.7kg NaOH again, reacts after 60 seconds; Add 6-7L isopropyl alcohol and 1L making herbs into wool additive then in the solution, react after 1200 seconds a making herbs into wool operation end in the matting.
3. the production technology of solar battery sheet according to claim 2; It is characterized in that: in the described matting; It is that silicon chip is dropped into concentration is that rinsing goes the metal ion operation to finish in 15% the hydrochloric acid solution after 300 seconds that the silicon chip that making herbs into wool is intact removes metal ion; , it is that silicon chip is dropped into concentration is in 15% the hydrofluoric acid solution that the silicon chip after going metal ion to finish is removed the oxide on silicon face surface, rinsing after 300 seconds deoxidation thing operation finish.
4. the production technology of solar battery sheet according to claim 1; It is characterized in that: in the described diffusing procedure, may further comprise the steps successively: advance boat 10 minutes, the oxidation 10 minutes of rising again, in advance put deposit 12 minutes, heat up 15 minutes, in advance push away trap 3 minutes, push away trap 14 minutes, cooling 10 minutes, went out boat 10 minutes.
5. the production technology of solar battery sheet according to claim 1 is characterized in that: in the described etching procedure, may further comprise the steps successively; Forvacuum 120s, main 100s, the feeding O of vacuumizing
2And CF
4Voltage stabilizing 20s, glow discharge 1200s, feed O again
240s, extract remaining 60-100s, nitrogen back pressure 60s.
6. the production technology of solar battery sheet according to claim 1 is characterized in that: described secondary cleaning operation; It is to leave standstill 8-16 minute in 20% the hydrofluoric acid solution that the silicon chip that etching procedure is intact drops into concentration, carries out surperficial dephosphorization and cleans.
7. the production technology of solar battery sheet according to claim 1, it is characterized in that: in the described PEVCD operation, the parameter setting of PECVD filming equipment is: SiH
4The feeding flow be 0.75L/min, NH
3The feeding flow be 6.3L/min; The required pressure of coating is 200pa, and it is 200pa that technology is opened required pressure; The heater heats temperature is 440-480 ℃, and be 2400-3000s heating time; The transmission speed of silicon chip is 800-1000mm/min.
8. according to the production technology of each described solar battery sheet of claim 1 to 7, it is characterized in that: in the described silkscreen process, the parameter of each concrete steps is following;
The parameter of backplate printing is that print speed printing speed is 300mm/s, and scraper plate pressure is 4-6kg, silk screen spacing 1.3-1.8mm;
The parameter of backplate oven dry is that oven temperature is 220 ℃, and the baking oven belt speed is 4000-4200mm/s;
The parameter of back surface field printing is that print speed printing speed is 220-280mm/s, and scraper plate pressure is 4-7kg, silk screen spacing 1.8-2.8mm;
The parameter of back surface field oven dry is that oven temperature is 180 ℃, and the baking oven belt speed is 4000-4200mm/s;
The positive electrode printing parameter is that print speed printing speed is 250-280mm/s, scraper plate pressure 4-6kg, silk screen spacing 1.2-1.8mm;
The parameter of sintering furnace is that belt speed is 190ipm, comprises 9 warm areas in the sintering furnace, and each warm area is 310 ℃, 320 ℃, 320 ℃, 450 ℃, 540 ℃, 600 ℃, 680 ℃, 840 ℃, 890 ℃ from front to back.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104134709A (en) * | 2014-08-14 | 2014-11-05 | 无锡尚品太阳能电力科技有限公司 | Printing technology for graphene electrode of polycrystalline silicon battery |
| CN104201243A (en) * | 2014-09-05 | 2014-12-10 | 浙江晶科能源有限公司 | Slurry filling method used for inside of MWT (metallization wrap-through) battery hole |
| CN104741335A (en) * | 2015-04-02 | 2015-07-01 | 中建材浚鑫科技股份有限公司 | Method for cleaning quartz boat for diffusion |
| CN108110088A (en) * | 2017-12-21 | 2018-06-01 | 苏州阿特斯阳光电力科技有限公司 | The low pressure diffusion technique of solar cell and the solar cell being prepared using it |
| CN108183149A (en) * | 2017-12-27 | 2018-06-19 | 安徽银欣新能源科技有限公司 | A kind of production method of solar battery sheet |
| CN109244189A (en) * | 2018-09-27 | 2019-01-18 | 嘉兴金瑞光伏科技有限公司 | Screen printer print technique |
| CN109530374A (en) * | 2018-11-21 | 2019-03-29 | 上海超硅半导体有限公司 | A kind of wafer cassette cleaning method |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104134709A (en) * | 2014-08-14 | 2014-11-05 | 无锡尚品太阳能电力科技有限公司 | Printing technology for graphene electrode of polycrystalline silicon battery |
| CN104201243A (en) * | 2014-09-05 | 2014-12-10 | 浙江晶科能源有限公司 | Slurry filling method used for inside of MWT (metallization wrap-through) battery hole |
| CN104741335A (en) * | 2015-04-02 | 2015-07-01 | 中建材浚鑫科技股份有限公司 | Method for cleaning quartz boat for diffusion |
| CN108110088A (en) * | 2017-12-21 | 2018-06-01 | 苏州阿特斯阳光电力科技有限公司 | The low pressure diffusion technique of solar cell and the solar cell being prepared using it |
| CN108110088B (en) * | 2017-12-21 | 2020-11-10 | 苏州阿特斯阳光电力科技有限公司 | Low-voltage diffusion process of solar cell and solar cell prepared by using low-voltage diffusion process |
| CN108183149A (en) * | 2017-12-27 | 2018-06-19 | 安徽银欣新能源科技有限公司 | A kind of production method of solar battery sheet |
| CN109244189A (en) * | 2018-09-27 | 2019-01-18 | 嘉兴金瑞光伏科技有限公司 | Screen printer print technique |
| CN109530374A (en) * | 2018-11-21 | 2019-03-29 | 上海超硅半导体有限公司 | A kind of wafer cassette cleaning method |
| CN109530374B (en) * | 2018-11-21 | 2021-07-27 | 上海超硅半导体有限公司 | Wafer box cleaning method |
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Application publication date: 20121212 |