CN102820204A - Scanning and photoresist removing system using radiofrequency and dielectric-barrier atmospheric-pressure glow plasmas - Google Patents
Scanning and photoresist removing system using radiofrequency and dielectric-barrier atmospheric-pressure glow plasmas Download PDFInfo
- Publication number
- CN102820204A CN102820204A CN2011101500773A CN201110150077A CN102820204A CN 102820204 A CN102820204 A CN 102820204A CN 2011101500773 A CN2011101500773 A CN 2011101500773A CN 201110150077 A CN201110150077 A CN 201110150077A CN 102820204 A CN102820204 A CN 102820204A
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- Prior art keywords
- plasma generator
- plasma
- radio
- housing
- power supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32348—Dielectric barrier discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
- H01J37/32376—Scanning across large workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32825—Working under atmospheric pressure or higher
Abstract
The invention discloses a scanning and photoresist removing system using radiofrequency and dielectric-barrier atmospheric-pressure glow plasmas. The scanning and photoresist removing system comprises a shell, a radiofrequency power source, a plasma generator, a gas inlet tube, a scanning manipulator, a heating plate and an exhaust hood, and is characterized in that a tabletop panel is arranged in the middle of the shell, the radiofrequency power source and a plurality of gas flow meters are arranged on the lower portion of the panel, the heating plate and the scanning manipulator are disposed on the tabletop panel, and the exhaust hood is arranged above the manipulator. Gas of a gas source is fed into the plasma generator via the gas inlet tube and the gas flow meters, and after the plasma generator is conducted with the radiofrequency power source, the plasmas are generated from the lower side of the plasma generator, and are sprayed to a silicon wafer on the surface of the heating plate to remove photoresist or organic matters on the surface of the silicon wafer.
Description
Technical field
The present invention relates to a kind of radio frequency, the dielectric impedance normal pressure glow plasma swept-volume system of removing photoresist; Especially refer to be under atmospheric pressure, the dielectric impedance plasma that glow discharge produces that adopts radio-frequency power supply to drive, scanning the system of under the mechanical hand-motion photoresist on the silicon chip surface being removed.
Background technology
Reach more high-tech node for 32nm; Cleaning in ultra shallow junction (USJ) technology becomes preceding road (FEOL) cleaning of most critical, to this international semiconductor blueprint (IT RS) require each clean the silicon materials loss that caused less than 0.3
.The requirement of satisfying such harshness is quite difficult for the technology of removing photoresist after high dose ion is injected.
Heavy dose of ion injects the shell that can form one deck carbonization at crystal column surface, and the physico of this layer shell is different along with the difference of injection condition, and after the ion of heavy dose injected bombardment, photoresist was difficult to remove especially.In order to reach target, common solution is to use strong oxidizer with the photoresist oxidation dissolution, and the carbonization shell on photoresist surface is to be difficult to very much dissolving, and needs to prolong the process treatment time solve problem.
Independent wet-cleaned is removed photoresist and be difficult to be removed the photoresist after high energy particle injects, and also there are many shortcomings in wet method, as can not accurately controlling; Clean not thoroughly, need to clean repeatedly; Can not handle residue; Contaminated environment needs waste liquid is handled; Consume a large amount of acid and water etc.In the dry method cleaning of plasma, do not use any chemical solvent, therefore have basically no pollutant, help environmental protection.In addition, its production cost is lower, cleans to have good homogeneous property, repeatability and controllability, is prone to realize producing in batches.But dry method commonly used is at present removed photoresist and cleaning equipment, is under vacuum state, uses plasma that crystal column surface is directly cleaned; Ion in the plasma can cause very big damage to the etching lines of crystal column surface like this; Be not applicable to 32nm and following node technology, and, because its use is vacuum system; This will make that equipment cost is high, complex operation.The present invention has designed the device that normal pressure produces plasma down, under manipulator drives, silicon chip surface is cleaned and removes photoresist, and does not need vacuum system, has improved production efficiency, lower production cost.
Summary of the invention
A kind of radio frequency, the dielectric impedance normal pressure glow plasma swept-volume system of removing photoresist; Comprise a housing, radio-frequency power supply, plasma generator, air inlet pipe, scanning manipulator and heating plate; And hood; It is characterized in that: be provided with a table top panel at the middle part of a housing, place a radio-frequency power supply and a plurality of gas flowmeter, on this deck plate, be provided with a heating plate and a scanning manipulator in the bottom of this panel; Above manipulator, be provided with a hood, plasma generator is mounted on this manipulator; The gas of source of the gas enters into plasma generator through the flowmeter of air induction conduit and gas; After plasma generator and radio-frequency power supply connection; Below this plasma generator, produce plasma; This plasma is to be ejected on the silicon chip of heater plate surface, removes the photoresist or the organic substance of silicon chip surface.
Described a kind of radio frequency, the dielectric impedance normal pressure glow plasma swept-volume system of removing photoresist; Comprise a housing, radio-frequency power supply, plasma generator, air inlet pipe, scanning manipulator and heating plate; And hood; It is characterized in that: the back side of housing, side and positive top and the bottom are to adopt metal cover board, and the poly (methyl methacrylate) plate of middle part, housing front for moving up and down, this poly (methyl methacrylate) plate are to drive with linear electric motors to realize moving up and down.
Described a kind of radio frequency, the dielectric impedance normal pressure glow plasma swept-volume system of removing photoresist; Comprise a housing, radio-frequency power supply, plasma generator, air inlet pipe, scanning manipulator and heating plate; And hood; It is characterized in that: this plasma generator is that the discharge of adopting atmospheric dielectric to stop forms, and is provided with a plurality of strip spouts at the lower surface of generator, and the power supply of generator is the power supply that adopts 13.56MHz.
Described a kind of radio frequency, the dielectric impedance normal pressure glow plasma swept-volume system of removing photoresist; Comprise a housing, radio-frequency power supply, plasma generator, air inlet pipe, scanning manipulator and heating plate; And hood; It is characterized in that: this plasma generator be mounted in one can be up and down with the two dimensional motion manipulator that moves horizontally on, the working gas that plasma generator adopted is the mist of argon gas, helium and oxygen.
Described a kind of radio frequency, the dielectric impedance normal pressure glow plasma swept-volume system of removing photoresist; Comprise a housing, radio-frequency power supply, plasma generator, air inlet pipe, scanning manipulator and heating plate; And hood; It is characterized in that: carry out scan-type through mechanically moving hand-motion plasma generator at silicon chip surface and clean, the surface temperature range of heating plate is 100-220 ℃ under the silicon chip.
Described a kind of radio frequency, the dielectric impedance normal pressure glow plasma swept-volume system of removing photoresist; Comprise a housing, radio-frequency power supply, plasma generator, air inlet pipe, scanning manipulator and heating plate; And hood; It is characterized in that: above housing, be provided with a hood, in this hood, be provided with electric heating waste gas combustion furnace silk and charcoal absorption piece.
Described a kind of radio frequency, the dielectric impedance normal pressure glow plasma swept-volume system of removing photoresist; Comprise a housing, radio-frequency power supply, plasma generator, air inlet pipe, scanning manipulator and heating plate; And hood; It is characterized in that: the control switch of this system is to adopt the PLC Equipment Control, and control flow is the side at housing.
The frequency medium that the present invention adopts stops the atmospheric plasma cleaning equipment, works under the normal pressure, adopts radio-frequency power supply (13.56MHz) discharge, the glow plasma of generation.Because radio frequency electrode is coated with dielectric barrier, can not sputter metal ion, and form metallic pollution; Under normal pressure, be ejected into the plasma line of silicon chip surface, owing to do not contain high energy particle, therefore can not cause the ion bombardment damage to crystal column surface.In addition, this system need not vacuumize, and has improved production efficiency, lower production cost.
Main application of the present invention is to be used in the integrated circuit fabrication process, photoresist and organic pollution after the energetic ion on the cleaning silicon chip injects.In addition, it also can be used for the organic substance cleaning of other substrate surfaces.
Description of drawings
A kind of radio frequency of Fig. 1 the present invention, the dielectric impedance normal pressure glow plasma swept-volume system embodiment Facad structure view that removes photoresist.
A kind of radio frequency of Fig. 2 the present invention, the dielectric impedance normal pressure glow plasma swept-volume system embodiment side sectional view that removes photoresist.
Fig. 3 plasma generator discharge principle of the present invention figure.
See also Fig. 1; Radio frequency of the present invention, the dielectric impedance normal pressure glow plasma swept-volume system of removing photoresist comprises hood 102, housing 105, two-dimensional scan machinery hand 106, plasma generator 107, air inlet pipe 109, heating plate 110, radio-frequency power supply 111.Plasma generator 107 is installed on the scanning manipulator 106; The gas of source of the gas gets into gas flowmeter 112 by minute air admission hole 113 respectively; And by gas flowmeter 112 control gaseous flows; Mix the back and enter into plasma generator 107, after plasma generator 107 and radio-frequency power supply 111 are connected, below this plasma generator, produce plasma through air inlet pipe 109; This plasma is to be ejected on the silicon chip that is placed on heating plate 110 surfaces, removes the photoresist or the organic substance of silicon chip surface.Hood 102 comprises ventilating fan 101, charcoal absorption piece 103, electric heating waste gas combustion furnace silk 104.The control switch of this system is by the equipment that adopts PLC 108 controls.
See also Fig. 2, in radio frequency of the present invention, dielectric impedance normal pressure glow plasma swept-volume removed photoresist system, the poly (methyl methacrylate) plate 201 that moves up and down was driven by linear electric motors 202 and realizes moving up and down.
See also Fig. 3; Mist gets in the plasma generator 107 through air inlet pipe 109; Plasma generator shell 303 ground connection, plasma generator dielectric impedance high electrode 302 produce glow plasma after connecting through radio frequency line with radio-frequency power supply 111; And the plasma that produces in following plasma discharging tagma of certain air pressure is ejected into downwards on the silicon chip 301 that is being placed on heating plate 110, removal silicon chip 301 show and on photoresist or organic substance.
Combine concrete embodiment that the utility model is described above; For a person skilled in the art; Under spirit that does not break away from the utility model and scope situation; Can make change and modification to the foregoing description, these changes and modification are all in claim limited range of the present invention.
Claims (7)
1. a radio frequency, dielectric impedance normal pressure glow plasma swept-volume system of removing photoresist; Comprise a housing, radio-frequency power supply, plasma generator, air inlet pipe, scanning manipulator and heating plate; And hood; It is characterized in that: be provided with a table top panel at the middle part of a housing, place a radio-frequency power supply and a plurality of gas flowmeter, on this deck plate, be provided with a heating plate and a scanning manipulator in the bottom of this panel; Above manipulator, be provided with a hood, plasma generator is mounted on this manipulator; The gas of source of the gas enters into plasma generator through the flowmeter of air induction conduit and gas; After plasma generator and radio-frequency power supply connection; Below this plasma generator, produce plasma; This plasma is to be ejected on the silicon chip of heater plate surface, removes the photoresist or the organic substance of silicon chip surface.
2. a kind of radio frequency as claimed in claim 1, the dielectric impedance normal pressure glow plasma swept-volume system of removing photoresist; Comprise a housing, radio-frequency power supply, plasma generator, air inlet pipe, scanning manipulator and heating plate; And hood; It is characterized in that: the back side of housing, side and positive top and the bottom are to adopt metal cover board, and the poly (methyl methacrylate) plate of middle part, housing front for moving up and down, this poly (methyl methacrylate) plate are to drive with linear electric motors to realize moving up and down.
3. a kind of radio frequency as claimed in claim 1, the dielectric impedance normal pressure glow plasma swept-volume system of removing photoresist; Comprise a housing, radio-frequency power supply, plasma generator, air inlet pipe, scanning manipulator and heating plate; And hood; It is characterized in that: this plasma generator is that the discharge of adopting atmospheric dielectric to stop forms, and is provided with a plurality of strip spouts at the lower surface of generator, and the power supply of generator is the power supply that adopts 13.56MHz.
4. a kind of radio frequency as claimed in claim 1, the dielectric impedance normal pressure glow plasma swept-volume system of removing photoresist; Comprise a housing, radio-frequency power supply, plasma generator, air inlet pipe, scanning manipulator and heating plate; And hood; It is characterized in that: this plasma generator be mounted in one can be up and down with the two dimensional motion manipulator that moves horizontally on, the working gas that plasma generator adopted is the mist of argon gas, helium and oxygen.
5. a kind of radio frequency as claimed in claim 1, the dielectric impedance normal pressure glow plasma swept-volume system of removing photoresist; Comprise a housing, radio-frequency power supply, plasma generator, air inlet pipe, scanning manipulator and heating plate; And hood; It is characterized in that: carry out scan-type through mechanically moving hand-motion plasma generator at silicon chip surface and clean, the surface temperature range of heating plate is 100-220 ℃ under the silicon chip.
6. a kind of radio frequency as claimed in claim 1, the dielectric impedance normal pressure glow plasma swept-volume system of removing photoresist; Comprise a housing, radio-frequency power supply, plasma generator, air inlet pipe, scanning manipulator and heating plate; And hood; It is characterized in that: above housing, be provided with a hood, in this hood, be provided with electric heating waste gas combustion furnace silk and charcoal absorption piece.
7. a kind of radio frequency as claimed in claim 1, the dielectric impedance normal pressure glow plasma swept-volume system of removing photoresist; Comprise a housing, radio-frequency power supply, plasma generator, air inlet pipe, scanning manipulator and heating plate; And hood; It is characterized in that: the control switch of this system is to adopt the PLC Equipment Control, and control flow is the side at housing.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101500773A CN102820204A (en) | 2011-06-07 | 2011-06-07 | Scanning and photoresist removing system using radiofrequency and dielectric-barrier atmospheric-pressure glow plasmas |
| PCT/CN2011/001410 WO2012167410A1 (en) | 2011-06-07 | 2011-08-24 | Scanning and degumming system using radio frequency, dielectric barrier atmospheric pressure glow plasma |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101500773A CN102820204A (en) | 2011-06-07 | 2011-06-07 | Scanning and photoresist removing system using radiofrequency and dielectric-barrier atmospheric-pressure glow plasmas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102820204A true CN102820204A (en) | 2012-12-12 |
Family
ID=47295328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101500773A Pending CN102820204A (en) | 2011-06-07 | 2011-06-07 | Scanning and photoresist removing system using radiofrequency and dielectric-barrier atmospheric-pressure glow plasmas |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102820204A (en) |
| WO (1) | WO2012167410A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104525525A (en) * | 2014-12-23 | 2015-04-22 | 中国电子科技集团公司第二研究所 | Diamond powder purifying bin at vacuum environment |
| CN105895489A (en) * | 2016-05-04 | 2016-08-24 | 中国科学技术大学 | Device and method for parallel mask-less scanning micro-nano processing based on atmospheric pressure plasma jet tube |
| US20180096827A1 (en) * | 2016-09-30 | 2018-04-05 | Tokyo Electron Limited | Atmospheric plasma processing systems and methods for manufacture of microelectronic workpieces |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09106899A (en) * | 1995-10-11 | 1997-04-22 | Anelva Corp | Plasma cvd device and method, and dry etching device and method |
| JPH11251304A (en) * | 1997-12-03 | 1999-09-17 | Matsushita Electric Works Ltd | Plasma treating system and method thereof |
| CN1411920A (en) * | 2001-10-18 | 2003-04-23 | 松下电器产业株式会社 | Negative pressure plasma device and cleaning method |
| CN2682772Y (en) * | 2004-02-26 | 2005-03-02 | 中国科学院微电子研究所 | Even large-area normal pressure radio frequency cold plasma generator |
-
2011
- 2011-06-07 CN CN2011101500773A patent/CN102820204A/en active Pending
- 2011-08-24 WO PCT/CN2011/001410 patent/WO2012167410A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09106899A (en) * | 1995-10-11 | 1997-04-22 | Anelva Corp | Plasma cvd device and method, and dry etching device and method |
| JPH11251304A (en) * | 1997-12-03 | 1999-09-17 | Matsushita Electric Works Ltd | Plasma treating system and method thereof |
| CN1411920A (en) * | 2001-10-18 | 2003-04-23 | 松下电器产业株式会社 | Negative pressure plasma device and cleaning method |
| CN2682772Y (en) * | 2004-02-26 | 2005-03-02 | 中国科学院微电子研究所 | Even large-area normal pressure radio frequency cold plasma generator |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104525525A (en) * | 2014-12-23 | 2015-04-22 | 中国电子科技集团公司第二研究所 | Diamond powder purifying bin at vacuum environment |
| CN105895489A (en) * | 2016-05-04 | 2016-08-24 | 中国科学技术大学 | Device and method for parallel mask-less scanning micro-nano processing based on atmospheric pressure plasma jet tube |
| CN105895489B (en) * | 2016-05-04 | 2017-11-07 | 中国科学技术大学 | Parallel maskless based on atmospheric pressure plasma jet pipe scans micro-nano processing unit (plant) and method |
| US20180096827A1 (en) * | 2016-09-30 | 2018-04-05 | Tokyo Electron Limited | Atmospheric plasma processing systems and methods for manufacture of microelectronic workpieces |
| US11049700B2 (en) * | 2016-09-30 | 2021-06-29 | Tokyo Electron Limited | Atmospheric plasma processing systems and methods for manufacture of microelectronic workpieces |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012167410A1 (en) | 2012-12-13 |
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