CN102818638A - Infrared detector of micrometering bolometer and manufacture method thereof - Google Patents
Infrared detector of micrometering bolometer and manufacture method thereof Download PDFInfo
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- CN102818638A CN102818638A CN2011101509744A CN201110150974A CN102818638A CN 102818638 A CN102818638 A CN 102818638A CN 2011101509744 A CN2011101509744 A CN 2011101509744A CN 201110150974 A CN201110150974 A CN 201110150974A CN 102818638 A CN102818638 A CN 102818638A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
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- 239000010703 silicon Substances 0.000 claims abstract description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 238000005260 corrosion Methods 0.000 claims abstract description 23
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- 238000005516 engineering process Methods 0.000 claims abstract description 22
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- 238000005530 etching Methods 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 75
- 238000010521 absorption reaction Methods 0.000 claims description 74
- 239000000377 silicon dioxide Substances 0.000 claims description 38
- 235000012239 silicon dioxide Nutrition 0.000 claims description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 23
- 229920005591 polysilicon Polymers 0.000 claims description 23
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- 238000002955 isolation Methods 0.000 claims description 19
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- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
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Abstract
The invention relates to an infrared detector of a micrometering bolometer and a manufacture method thereof. The manufacture method includes the following steps: A. adopting the CMOS process to manufacture a signal processing circuit and simultaneously forming an infrared probe detector unit semiproduct; B. adopting the drying etching process to etch the infrared probe detector unit semiproduct to form an etching window; C. precipitating a protection layer and etching the protection layer to form a lateral wall; and D. etching a silicon substrate through the corrosion window and manufacturing a suspended arm and an infrared absorbing layer in an infrared detector unit to form a cavity. The manufacture method of the micrometering bolometer and the infrared detector adopts combination of the CMOS process and the MEMS process in the commercial criterion in the market, and integrates infrared detection units and the signal processing circuit on one chip. The manufacture process is completely compatible with the standard CMOS process, easy to integrate and suitable for large batch production. Compared with the prior SOI technology which is not mature, the manufacture method greatly reduces cost and is apt to achieve industrial production.
Description
[technical field]
The present invention relates to the infrared eye technical field, relate in particular to a kind of micro-metering bolometer infrared eye and preparation method thereof.
[background technology]
The infrared detector array imaging technique is the high-tech complex art that integrates infra-red material, optical technology, Refrigeration Technique and microelectric technique.At present, infrared imagery technique also be widely used in industry with civilian at the field, like infrared resource detection, infra-red heat analysis and all kinds of infrared imagings and the infrared fault diagnosis etc. that comprise tissue.Can predict, along with the further reduction of manufacturing cost, its application also can enlarge rapidly, and its vast market prospect is conclusive.
Thermal infrared detector absorbs the thermal effect of infrared radiation based on thermo-sensitive material, mainly comprises three types of micro-metering bolometer, thermoelectric pile and pyroelectric detectors.Their advantage be volume little, low in energy consumption, needn't freeze and response spectrum wide waveband etc.Wherein, It is simple to release electric explorer based on micro-metering bolometer specific heat in preparation of PN junction temperature effect; Responsiveness is again far above thermoelectric pile, and its be easy to the CMOS sensing circuit integrated, so this is a main direction making non-refrigeration infrared detector array at present.
Worldwide; The various countries researchist has carried out extensive studies to the ultra-large infrared detector array that is fit to various application with implemented with low cost, and the subject matter that realizes low-cost infrared eye goes out integrated and aspect CMOS technology compatible at monolithic.
[summary of the invention]
Based on this, be necessary to provide manufacturing approach a kind of and the micro-metering bolometer infrared eye that standard CMOS process is compatible.
A kind of preparation method of micro-metering bolometer infrared eye comprises the following steps: steps A, adopts CMOS technology to make signal processing circuit, forms infrared eye unit semi-manufacture simultaneously; Step B adopts dry etch process etching infrared eye unit semi-manufacture, forms corrosion window; Step C, the deposit protective seam, and the said protective seam of etching forms side wall; Step D through said corrosion window corrosion silicon substrate, makes unsettled cantilever and infrared absorption layer, and forms cavity in the infrared eye unit.
Preferably, said steps A may further comprise the steps: steps A 1, design the domain of said micro-metering bolometer infrared eye; Steps A 2 adopts standard CMOS process to carry out flow, has obtained the half-finished chip of said signal processing circuit and infrared eye unit integrated.
Preferably, said step B may further comprise the steps: step B1 is a masking layer with the metal level, and the half-finished silicon dioxide layer in said infrared eye unit is carried out etching; Step B2 after said silicon dioxide layer etching finishes, continues to form said corrosion window with dry etch process etch silicon substrate.
Preferably, said step C adopts the said protective seam of low-pressure chemical vapor phase deposition technology deposit.
Preferably, the corrosion among the said step D is a wet etching.
Also be necessary to provide a kind of micro-metering bolometer infrared eye that adopts this method manufacturing to obtain.
A kind of micro-metering bolometer infrared eye comprises interconnective signal processing circuit and infrared detecting unit, and said infrared detecting unit comprises silicon substrate, isolation channel, infrared absorption layer and cantilever; Said isolation channel, infrared absorption layer and cantilever are located on the said silicon substrate, are provided with the corrosion window of engraved structure between said infrared absorption layer and the isolation channel, and said infrared absorption layer is hanging structure and links together through cantilever and isolation channel; Said cantilever comprises the arm silicon substrate, is located at the cantilever silicon dioxide layer on the said arm silicon substrate and is located at the cantilever polysilicon in the said cantilever silicon dioxide layer that the both sides of said cantilever are the cantilever side wall; The well region that said infrared absorption layer comprises the absorption layer silicon substrate, be located at silicon dioxide absorption layer on the said absorption layer silicon substrate, be located in the said absorption layer silicon substrate and have a common boundary with said silicon dioxide absorption layer, be located at the absorption polysilicon in the said silicon dioxide absorption layer and be located at the absorption metal layer in the said absorption silicon dioxide absorption layer, the both sides of said infrared absorption layer are for absorbing side wall; Said infrared absorption layer also comprises electrical cable, and said absorption metal layer is connected with well region and absorption polysilicon through said electrical cable; Between said infrared absorption layer and the silicon substrate, form cavity between said cantilever and the silicon substrate, said cantilever polysilicon with absorb polysilicon and interconnect.
Preferably, said silicon substrate is a N type silicon, and said well region is a P+ type trap; Or said silicon substrate is P-type silicon, and well region is a N+ type trap.
Preferably, said cantilever is inflection structure or linear structure.
Preferably, the material of said side wall is silicon nitride or silicon dioxide.
Preferably, the quantity of said infrared detecting unit is a plurality of and rearranges infrared focal plane array.
The preparation method of above-mentioned micro-metering bolometer infrared eye; Adopt commercial criterion CMOS technology and MEMS (Micro-Electro-Mechanical Systems on the market; Microelectromechanical-systems) technology combines, and can infrared detecting unit and signal processing circuit be integrated on the chip, and its manufacture craft and standard CMOS process are compatible fully; Be easy to integratedly, be fit to produce in enormous quantities very much.With respect to adopting cost costliness and the jejune SOI of technology (Silicon-On-Insulator, silicon on the insulation course) technology, cost is reduced greatly, is easy to realize the industrialization volume production.
[description of drawings]
Fig. 1 is the vertical view of micro-metering bolometer infrared detector array among the embodiment;
Fig. 2 is the vertical view of single infrared detecting unit among Fig. 1;
Fig. 3 is the cross-sectional view of infrared detecting unit shown in Figure 2 along the A-A direction;
Fig. 4 is the preparation method's of micro-metering bolometer infrared eye among the embodiment a process flow diagram;
Fig. 5 is the half-finished cross-sectional view in infrared eye unit that steps A forms among the embodiment;
Fig. 6 is the cross-sectional view of infrared eye unit after step B accomplishes;
Fig. 7 is the cross-sectional view of infrared eye unit after step C accomplishes.
10-isolation channel 20-corrosion window 30-infrared absorption layer 40-cantilever
110-metal level 120-side wall 130-well region 150-silicon dioxide layer
160-polysilicon 170-silicon substrate 180-cavity 190-electrical cable
[embodiment]
For make the object of the invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
The micro-metering bolometer infrared eye comprises interconnective signal processing circuit and infrared detecting unit.Infrared detecting unit in the micro-metering bolometer infrared eye can use separately, also can form infrared focal plane array (being the micro-metering bolometer infrared detector array) by a plurality of infrared eye unit cell arrangement.Fig. 1 is the vertical view of micro-metering bolometer infrared detector array among the embodiment, and Fig. 2 is the vertical view of single infrared detecting unit among Fig. 1.Infrared detecting unit comprises silicon substrate, also comprises isolation channel 10, infrared absorption layer 30 and the cantilever 40 be located on the silicon substrate.Be provided with the corrosion window 20 (being formed by etching technics) of engraved structure between infrared absorption layer 30 and the isolation channel 10, infrared absorption layer 30 is a hanging structure, only links together through cantilever 40 and isolation channel 10.
Fig. 3 is the cross-sectional view of infrared detecting unit shown in Figure 2.Isolation channel 10 comprises the isolation channel side wall 121 of being located at the edge and is located at the isolation channel silicon dioxide layer 151 on the silicon substrate 170.Isolation channel 10 is used to realize the electricity isolation between each infrared eye unit.
The well region 130 that infrared absorption layer 30 comprises absorption layer silicon substrate 173, be located at silicon dioxide absorption layer 153 on the absorption layer silicon substrate 173, be located in the absorption layer silicon substrate 173 and have a common boundary with silicon dioxide absorption layer 153, be located at the absorption polysilicon 163 in the silicon dioxide absorption layer 153 and be located at the absorption metal layer 113 in the silicon dioxide absorption layer 153, the both sides of infrared absorption layer 30 are for absorbing side wall 123.Infrared absorption layer 30 also comprises electrical cable 190, and absorption metal layer 113 is connected with well region 130 and absorption polysilicon 163 through electrical cable 190.
In the present embodiment, the material of side wall 120 is silicon nitrides.The material of side wall 120 also can be a silicon dioxide in other embodiments.
The effect of cavity 180 is adiabatic.After forming cavity 180; Infrared absorption layer 30 is just isolated with silicon substrate 170 (this paragragh indication silicon substrate 170 does not comprise arm silicon substrate 174 and absorption layer silicon substrate 173); Infrared absorption layer 30 just can not pass through silicon substrate 170 heat absorptions and heat radiation; Guaranteed the temperature effect of PN junction, made that device can operate as normal.
Above-mentioned micro-metering bolometer infrared eye is based on the PN junction temperature effect; Utilize the thermal effect of infrared radiation; Convert infrared energy into heat energy by infrared absorbing material silicon dioxide, cause that the PN junction temperature on the silicon substrate changes, the volt-ampere characteristic of PN junction changes thereupon; Know this variation and handle through being in signal processing circuit on the same silicon substrate again, thereby obtain the information of infrared radiation with the micro-metering bolometer infrared detector array.
Fig. 4 is the preparation method's of micro-metering bolometer infrared eye among the embodiment a process flow diagram, comprises the following steps.
Steps A adopts CMOS technology to make signal processing circuit, forms infrared eye unit semi-manufacture.Fig. 5 is the half-finished cross-sectional view in infrared eye unit among the embodiment, the well region 130 that comprises silicon substrate 170, is located at silicon dioxide layer 150 on the silicon substrate 170, is located in the silicon substrate 170 and has a common boundary with silicon dioxide layer 150, is located at polysilicon 160 and metal level 110 in the silicon dioxide layer 150.Infrared eye unit semi-manufacture also comprise electrical cable 190, and the metal level 110 of part is connected through the polysilicon layer 160 of electrical cable 190 with well region 130 and part.
In the present embodiment, steps A specifically may further comprise the steps:
Steps A 1, the domain of design micro-metering bolometer infrared eye.
Steps A 2 adopts standard CMOS process to carry out flow, has obtained the half-finished chip of signal processing circuit and infrared eye unit integrated.
Domain according to the micro-metering bolometer infrared eye adopts CMOS technology to make infrared eye unit semi-manufacture.Utilize metal to can be used as the principle of dry etching masking layer, the zone that later stage device release process need be corroded crosses corrosion window 20 with CMOS technology making metal level 110.The micro-metering bolometer infrared eye comprises interconnective signal processing circuit and infrared detecting unit.Infrared detecting unit in the micro-metering bolometer infrared eye can use separately, also can form infrared focal plane array (being the micro-metering bolometer infrared detector array) by a plurality of infrared eye unit cell arrangement.Signal processing circuit is produced on the periphery of micro-metering bolometer infrared detector array, is integrated on the same silicon chip (chip) with the micro-metering bolometer infrared detector array.
Step B adopts dry etch process etching infrared eye unit semi-manufacture, forms corrosion window 20 as shown in Figure 2.Fig. 6 is the cross-sectional view of infrared eye unit after step B accomplishes.In the present embodiment, step B specifically may further comprise the steps:
Step B1 is a masking layer with metal level 110, and the half-finished silicon dioxide layer 150 in infrared eye unit is carried out etching.Metal level 110 can be used as the masking layer of dry etching, and the structure of protection metal level 110 belows is not etched.
Step B2, after silicon dioxide layer 150 etchings finished, continuation to desired depth, formed corrosion window 20 as shown in Figure 2 with dry etch process etch silicon substrate 170.
Step C, the deposit protective seam, and the etching protective seam forms side wall 120.Fig. 7 is the cross-sectional view of infrared eye unit after step C accomplishes.In the present embodiment, low-pressure chemical vapor phase deposition technology is adopted in deposit, and the corrosive liquid that 120 pairs of follow-up wet etchings of side wall adopt has anticorrosive effect, can protect the position that is coated with side wall 120.
Step D through corrosion window corrosion silicon substrate 170, makes unsettled cantilever 40 and infrared absorption layer 30, and forms cavity 180 (as shown in Figure 3) in the infrared eye unit.Step D promptly obtains infrared detecting unit as shown in Figure 3 after accomplishing.In the present embodiment, wet etching is adopted in corrosion among the step D, and metal level 110 is exposed to the extraneous part liquid that is corroded and removes in the lump, and the absorption metal layer 113 in the metal level 110 is not protected and can be corroded by silicon dioxide absorption layer 153.
The preparation method of above-mentioned micro-metering bolometer infrared eye; Commercial criterion CMOS technology combines with MEMS technology on the employing market; Can infrared detecting unit and signal processing circuit be integrated on the chip; Its manufacture craft and standard CMOS process are compatible fully, are easy to integratedly, are fit to very much produce in enormous quantities.With respect to adopting cost costliness and the jejune SOI of technology (Silicon-On-Insulator, silicon on the insulation course) technology, cost is reduced greatly, is easy to realize the industrialization volume production.Adopt side wall protection; The principle of utilizing corrosive liquid anisotropic etch silicon substrate to stop certainly at (111) crystal face; Corrosion discharges PN junction and infrared absorption layer structure; Can effectively avoid the conventional galvanochemistry that adopts to discharge problems such as lack of homogeneity that PN junction and infrared absorption layer produce, wayward and electric contact area protection difficulty, improve yield of products greatly from stopping wet corrosion technique.
The above embodiment has only expressed several kinds of embodiments of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the present invention's design, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with accompanying claims.
Claims (10)
1. a micro-metering bolometer infrared eye is characterized in that, comprises interconnective signal processing circuit and infrared detecting unit, and said infrared detecting unit comprises silicon substrate, isolation channel, infrared absorption layer and cantilever;
Said isolation channel, infrared absorption layer and cantilever are located on the said silicon substrate, are provided with the corrosion window of engraved structure between said infrared absorption layer and the isolation channel, and said infrared absorption layer is hanging structure and links together through cantilever and isolation channel;
Said cantilever comprises the arm silicon substrate, is located at the cantilever silicon dioxide layer on the said arm silicon substrate and is located at the cantilever polysilicon in the said cantilever silicon dioxide layer that the both sides of said cantilever are the cantilever side wall;
The well region that said infrared absorption layer comprises the absorption layer silicon substrate, be located at silicon dioxide absorption layer on the said absorption layer silicon substrate, be located in the said absorption layer silicon substrate and have a common boundary with said silicon dioxide absorption layer, be located at the absorption polysilicon in the said silicon dioxide absorption layer and be located at the absorption metal layer in the said absorption silicon dioxide absorption layer, the both sides of said infrared absorption layer are for absorbing side wall; Said infrared absorption layer also comprises electrical cable, and said absorption metal layer is connected with well region and absorption polysilicon through said electrical cable; Between said infrared absorption layer and the silicon substrate, form cavity between said cantilever and the silicon substrate, said cantilever polysilicon with absorb polysilicon and interconnect.
2. micro-metering bolometer infrared eye according to claim 1 is characterized in that, said silicon substrate is a N type silicon, and said well region is a P+ type trap; Or said silicon substrate is P-type silicon, and well region is a N+ type trap.
3. micro-metering bolometer infrared eye according to claim 1 is characterized in that, said cantilever is inflection structure or linear structure.
4. micro-metering bolometer infrared eye according to claim 1 is characterized in that, the material of said side wall is silicon nitride or silicon dioxide.
5. micro-metering bolometer infrared eye according to claim 1 is characterized in that, the quantity of said infrared detecting unit is a plurality of and rearranges infrared focal plane array.
6. the preparation method of a micro-metering bolometer infrared eye comprises the following steps:
Steps A adopts CMOS technology to make signal processing circuit, forms infrared eye unit semi-manufacture simultaneously;
Step B adopts dry etch process etching infrared eye unit semi-manufacture, forms corrosion window;
Step C, the deposit protective seam, and the said protective seam of etching forms side wall;
Step D through said corrosion window corrosion silicon substrate, makes unsettled cantilever and infrared absorption layer, and forms cavity in the infrared eye unit.
7. the preparation method of micro-metering bolometer infrared eye according to claim 6 is characterized in that, said steps A may further comprise the steps:
Steps A 1 designs the domain of said micro-metering bolometer infrared eye;
Steps A 2 adopts standard CMOS process to carry out flow, has obtained the half-finished chip of said signal processing circuit and infrared eye unit integrated.
8. the preparation method of micro-metering bolometer infrared eye according to claim 6 is characterized in that, said step B may further comprise the steps:
Step B1 is a masking layer with the metal level, and the half-finished silicon dioxide layer in said infrared eye unit is carried out etching;
Step B2 after said silicon dioxide layer etching finishes, continues to form said corrosion window with dry etch process etch silicon substrate.
9. the preparation method of micro-metering bolometer infrared eye according to claim 6 is characterized in that, said step C adopts the said protective seam of low-pressure chemical vapor phase deposition technology deposit.
10. the preparation method of micro-metering bolometer infrared eye according to claim 6 is characterized in that, the corrosion among the said step D is a wet etching.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103076099A (en) * | 2013-01-23 | 2013-05-01 | 中国科学院微电子研究所 | Single-chip integrated infrared focal plane detector |
| CN113091919A (en) * | 2021-04-12 | 2021-07-09 | 上海芯物科技有限公司 | Thermopile sensor and manufacturing method thereof |
| CN113659028A (en) * | 2021-02-01 | 2021-11-16 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113659027A (en) * | 2021-02-01 | 2021-11-16 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103076099A (en) * | 2013-01-23 | 2013-05-01 | 中国科学院微电子研究所 | Single-chip integrated infrared focal plane detector |
| CN103076099B (en) * | 2013-01-23 | 2015-09-16 | 中国科学院微电子研究所 | Single-chip integration infrared focal plane detector |
| CN113659028A (en) * | 2021-02-01 | 2021-11-16 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113659027A (en) * | 2021-02-01 | 2021-11-16 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113659027B (en) * | 2021-02-01 | 2022-07-22 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113659028B (en) * | 2021-02-01 | 2022-07-26 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113091919A (en) * | 2021-04-12 | 2021-07-09 | 上海芯物科技有限公司 | Thermopile sensor and manufacturing method thereof |
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Application publication date: 20121212 Assignee: Shenzhen Zhangchao Technology Co.,Ltd. Assignor: SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY CHINESE ACADEMY OF SCIENCES Contract record no.: X2023980043397 Denomination of invention: Micro bolometer infrared detector and its preparation method Granted publication date: 20150415 License type: Common License Record date: 20231013 |