CN102816533A - Chemical-mechanical polishing method used for phase-change materials - Google Patents
Chemical-mechanical polishing method used for phase-change materials Download PDFInfo
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Abstract
The invention provides a chemical-mechanical polishing method used for phase-change materials. A chemical-mechanical polishing solution comprises an oxidant having a single persulfide composite salt and a grinding material. The polishing solution is used for polishing a substrate containing the phase-change materials. The chemical-mechanical polishing solution used for the phase-change materials is simple in component, easy to prepare, can greatly accelerate polishing speed for the phase-change materials such as GST and the like while guaranteeing polishing effects of the phase-change materials in polishing processes of the phase-change materials, improves polishing efficiency of the phase-change materials, increases production capacity of chips, reduces consumption, decreases production cost, and satisfies the requirements for polishing a large number of phase-change materials at a high speed.
Description
Technical field
The present invention relates to a kind of cmp method, be particularly useful for the cmp method of phase change material.
Background technology
In Jiu Yue, 1966 Ao Fuxinsiji (Stanford Ovshinsky) submitted first relevant phase transition storage patent of (Phase change memory is called for short PCM) to based on the GST alloy.In nineteen sixty-eight, Ao Fuxinsiji (Stanford Ovshinsky) has delivered first piece of paper about noncrystal phase transformation again, has founded non-crystalline semiconductor afterwards.Phase change material is in data storage procedure; It becomes crystal by non-crystal state; Become again in the non-crystal process, it is noncrystal to present different reflective characteristic and resistance characteristic with crystal state again, therefore can utilize non-crystalline state and crystalline state to represent " 0 " and " 1 " to store data respectively.
Phase transformation access memory (PRAM) is also referred to as ovonic memory, and use can be carried out the phase change material (PCM) that TURP changes and use to be used for electronic memory between the crystal state of insulating noncrystalline state and conduction.PCM can change physical condition according to heat/cool rates, temperature and time reversiblely.Be kept at the canned data among the PRAM conduction property minimum loss through different physical conditions.
PRAM has the advantage of the conventional integrated dynamic RAM of height (DRAM), static RAM (SRAM) and non-volatile specification fast-flash memory body image hard disc (NAND) flash memory, and with the integrated technique of complementary metal oxide semiconductor (C-MOS) field-effect transistor (FETs) of routine the compatibility of excellence is arranged.Based on these advantages, PRAM has attracted increasing concern owing to having successfully business-like maximum likelihood.And at present the PCM material of application prospect is arranged most is GST (germanium, antimony and tellurium) alloy, for example Ge
2Sb
2Te
5The GST alloy still can keep excellent information storage capability under the state of extremely low dimension (about 5 nanometers), so the memory device that adopts Ge-Sb-Te alloy to process has very high information storage density.Phase change random access memory devices is considered to have the storer of new generation of competitive power.
In the actual course of processing of chip, can be with GST (Ge
2Sb
2Te
5) through chemical vapour deposition behind silicon chip surface, silicon chip surface is carried out planarization.In present substrate surface planarization, chemically machinery polished (CMP) technology is considered to the effective means of present overall planarization.
Chemically machinery polished (CMP) is by chemical action, mechanical effect and these two kinds effect be combined intos.It is usually by a grinding stage that has polishing pad, and a grinding head that is used for carries chips is formed.Wherein grinding head is fixed chip, and the front with chip is pressed on the polishing pad then.When carrying out chemically machinery polished, grinding head linearity on polishing pad moves or rotates along the heading the same with grinding stage.Meanwhile, the slurry that contains abrasive is dripped on the polishing pad, and is tiled on the polishing pad because of centrifugation.Chip surface is realized overall planarization under machinery and chemical dual effect.Main mechanism to metal level chemically machinery polished (CMP) is considered to: oxygenant is earlier with the oxidation on metal surface complexing; The abrasive that with silicon-dioxide and aluminum oxide is representative is removed this layer sull machinery; It is oxidized to produce new metallic surface continuation, these two kinds collaborative the carrying out of effect.
Yet; Different with the metal level of forming by single-element such as copper (Cu) or tungsten (W) of routine; The layer of polished phase-change memory device is made up of the advanced material of the special elements that contains specified proportion; Like sulphur (S), selenium (Se), germanium (Ge), antimony (Sb), tellurium (Te), silver (Ag), indium (In), tin (Sn), gallium (Ga) etc., thereby between crystal form and amorphous state, carry out reversible transformation.And the hardness of phase change material is lower, adopts common chemical mechanical polishing liquid also bad for the polishing effect of GST material, can cut occur on the surface of phase change material.On the other hand, some chemical mechanical polishing slurries can not evenly remove all components of phase change material, cause polishing back phase change material residue and residual and stay on the dielectric layer, and in the subsequent step of device manufacturing, cause further problem.
Occurred the research of a series of GST of being directed to chemical mechanical polishing slurries in the market, used oxygenant (for example: ydrogen peroxide 50) add complexing agents such as oxalic acid, propanedioic acid, succsinic acid, Hydrocerol A and carry out the GST polishing like U.S. Pat 7897061B2, US20070178700A1.US20100190339A1 use oxygenant adds Methionin and carries out the GST polishing.US7678605B2, US20090057834A1 add corrosion inhibitor (verivate of aspartic acid) with oxygenant and carry out the GST polishing.US20090001339A1 reduces the metal attack (erosion) in the GST polishing process with triethylamine, quaternary ammonium salt oxidizer.US20100112906A1 carries out the GST polishing with quaternary ammonium hydroxide.And for example to provide a kind of be that oxygenant, organic acid are mixed the chemical mechanical polishing liquid that abrasive grains is a staple as sequestrant with the hydrogen peroxide to Chinese patent CN101370897A; Chinese patent CN101333420A provides the chemical mechanical polishing slurry of a kind of nitrogenous compound, abrasive grains, oxygenant or abrasive grains and oxygenant; Chinese patent CN101765647A provides a kind of compsn that comprises particulate abrasive material and Methionin oxygenant; One kind of Chinese patent CN101333421A is used for the paste compound of chemically machinery polished and is staple with deionized water and iron or iron cpd, removes abrasive grains, thereby improves the profile pattern for the GST material.
The polishing that above-mentioned patent all is directed against the GST material has proposed new polishing fluid scheme; To improve polishing effect for the GST material; Yet we find that main in the existing technology is main oxygenant with hydrogen peroxide, and existing oxygenant is lower for the polishing speed of GST material; In the wherein above-mentioned patent; The polishing fluid that Chinese patent CN101333420A provides is the highest for GST material polishing speed, but also on average also only reach 2000 dusts/minute, the polishing efficiency of GST can't satisfy existing demand.
Summary of the invention
The invention provides a kind of cmp method that is used for phase change material, to solve to the insufficient problem of above-mentioned existing phase change material polishing technology.Finishing method of the present invention improves the polishing speed of phase change material greatly when keeping the phase change material polishing effect.
The present invention is used for the cmp method of phase change material and realizes its purpose through following technical scheme:
A kind of chemical mechanical polishing liquid that contains abrasive material, oxygenant is provided; Wherein, said oxygenant comprises the composite salt of monopersulfate salt;
Adopt above-mentioned chemical mechanical polishing liquid on grinding stage, the base material that contains phase change material to be carried out chemically machinery polished.
In the said CMP process, grinding pressure preferably is controlled at 3～5psi scope; The grinding stage rotating speed preferably is controlled at 60～120 rev/mins, grinding head rotation rotating speed and preferably is controlled at 80～200 rev/mins of scopes; Said chemical mechanical polishing liquid rate of addition is controlled at 80～200ml/ minute scope.
The cmp method that is used for phase change material of the present invention, the composite salt of monopersulfate salt comprise the compsn that monopersulfate salt, hydrosulfate and vitriol are formed, and said salt can be sylvite, sodium salt, ammonium salt etc.
The cmp method that is used for phase change material of the present invention, wherein, the mol ratio of said monopersulfate salt, hydrosulfate and vitriol is preferably 2～5: 1～3: 1～4.
The cmp method that is used for phase change material of the present invention, wherein, the mol ratio of said monopersulfate salt, hydrosulfate and vitriol further is preferably 2～3: 1～2: 1～2.The compsn that most preferred monopersulfate salt, hydrosulfate and vitriol are formed is 2KHSO
5KHSO
4K
2SO
4
The cmp method that is used for phase change material of the present invention, wherein, the mass percent that the compsn that said monopersulfate salt, hydrosulfate and vitriol are formed accounts for said chemical mechanical polishing liquid is 0.1～10wt%.
The cmp method that is used for phase change material of the present invention, wherein, the mass percent that the compsn that said monopersulfate salt, hydrosulfate and vitriol are formed accounts for said chemical mechanical polishing liquid is 1～5wt%.
The cmp method that is used for phase change material of the present invention, wherein, said abrasive material can be one or more abrasives in silicon-dioxide, aluminum oxide, cerium oxide, red stone, silicon nitride and the titanium oxide.
The cmp method that is used for phase change material of the present invention, wherein, the mass percent that described abrasive accounts for said chemical mechanical polishing liquid is 0.1～20wt%.
According to a kind of preferred implementation that is used for the cmp method of phase change material according to the invention, wherein, described chemical mechanical polishing liquid adopts pH value regulator that the pH value of chemical mechanical polishing liquid is adjusted to 0.5～4.
The advantage that adopts the present invention to be used for the cmp method of phase change material is:
The chemical mechanical polishing liquid composition that is used for phase change material among the present invention is simple, and preparation easily.And unexpectedly, the present invention replaces superoxide as in the oxygenant polishing phase change material process, when guaranteeing the phase change material polishing effect with the composite salt of monopersulfate salt; Accelerated polishing speed greatly for phase change materials such as GST; Improve the polishing efficiency of phase change material, improved the throughput of chip, and reduced consumption; Reduce production cost, satisfied the demand that industry is a large amount of, two-forty is polished phase change material.
Embodiment
Through specific embodiment polishing effect of the present invention is described below, but protection scope of the present invention is not limited to following embodiment:
According to the component among each embodiment, content ratio preparation chemical mechanical polishing liquid, and in deionized water, mix, insufficient section is not enough with deionized water, and adopts nitric acid or sulfuric acid adjust pH, can make chemical mechanical polishing liquid:
Embodiment 1:
Abrasive is selected silicon-dioxide for use, and it accounts for the polishing fluid mass content is 5wt%;
Oxygenant is selected 2KHSO for use
5KHSO
4K
2SO
4, it accounts for the polishing fluid mass content is 1wt%;
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5;
Polishing condition: polishing machine platform is Logitech (Britain) 1PM52 type, polytex polishing pad, 4cm * 4cm square wafer (Wafer); Grinding pressure 4psi; 90 rev/mins of grinding stage rotating speeds, 140 rev/mins of grinding head rotation rotating speeds, polishing fluid rate of addition 140ml/ minute.
Embodiment 2:
Abrasive is selected silicon-dioxide for use, and it accounts for the polishing fluid mass content is 5wt%;
Oxygenant is selected 2KHSO for use
5KHSO
4K
2SO
4, it accounts for the polishing fluid mass content is 2wt%;
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5;
Finishing method is with reference to embodiment 1 said method operation.
Embodiment 3:
Abrasive is selected silicon-dioxide for use, and it accounts for the polishing fluid mass content is 5wt%;
Oxygenant is selected 2KHSO for use
5KHSO
4K
2SO
4, it accounts for the polishing fluid mass content is 0.1wt%;
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5;
Finishing method is with reference to embodiment 1 said method operation.
Embodiment 4:
Abrasive is selected silicon-dioxide for use, and it accounts for the polishing fluid mass content is 5wt%
Oxygenant is selected 2KHSO for use
5KHSO
4K
2SO
4, it accounts for the polishing fluid mass content is 10wt%;
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5;
Polishing condition: polishing machine platform is Logitech (Britain) 1PM52 type, polytex polishing pad, 4cm * 4cm square wafer (Wafer); Grinding pressure 3psi; 60 rev/mins of grinding stage rotating speeds, 80 rev/mins of grinding head rotation rotating speeds, polishing fluid rate of addition 80ml/ minute.
Embodiment 5:
Abrasive is selected silicon-dioxide for use, and it accounts for the polishing fluid mass content is 5wt%
Oxygenant is selected 2KHSO for use
5KHSO
4K
2SO
4, it accounts for the polishing fluid mass content is 5wt%;
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 0.5;
Polishing condition: polishing machine platform is Logitech (Britain) 1PM52 type, polytex polishing pad, 4cm * 4cm square wafer (Wafer); Grinding pressure 5psi; 120 rev/mins of grinding stage rotating speeds, 200 rev/mins of grinding head rotation rotating speeds, polishing fluid rate of addition 200ml/ minute.
Embodiment 6:
Abrasive is selected silicon-dioxide for use, and it accounts for the polishing fluid mass content is 20wt%
Oxygenant is selected 2KHSO for use
5KHSO
4K
2SO
4, it accounts for the polishing fluid mass content is 1wt%;
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 4;
Finishing method is with reference to embodiment 1 said method operation.
Embodiment 7:
Abrasive is selected silicon-dioxide for use, and it accounts for the polishing fluid mass content is 0.1wt%
Oxygenant is selected 2KHSO for use
5KHSO
4K
2SO
4, it accounts for the polishing fluid mass content is 2wt%;
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5;
Finishing method is with reference to embodiment 1 said method operation.
Embodiment 8:
Abrasive is selected aluminum oxide for use, and it accounts for the polishing fluid mass content is 5wt%
Oxygenant is selected 2KHSO for use
5KHSO
4K
2SO
4, it accounts for the polishing fluid mass content is 2wt%;
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5;
Finishing method is with reference to embodiment 1 said method operation.
Embodiment 9:
Abrasive is selected cerium oxide for use, and it accounts for the polishing fluid mass content is 3wt%
Oxygenant is selected 2KHSO for use
5KHSO
4K
2SO
4, it accounts for the polishing fluid mass content is 2wt%;
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5;
Finishing method is with reference to embodiment 1 said method operation.
Embodiment 10:
Abrasive is selected red stone for use; It accounts for the polishing fluid mass content is 5wt%
Oxygenant is selected 2KHSO for use
5KHSO
4K
2SO
4, it accounts for the polishing fluid mass content is 2wt%
Polishing fluid pH value: 1.5
Finishing method is with reference to embodiment 1 said method operation.
Embodiment 11:
Abrasive is selected silicon nitride for use, and its content is 7wt%
Oxygenant is selected 2KHSO for use
5KHSO
4K
2SO
4, it accounts for the polishing fluid mass content is 2wt%;
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to embodiment 1 said method operation.
Embodiment 12:
Abrasive is selected titanium oxide for use, and it accounts for the polishing fluid mass content is 10wt%
Oxygenant is selected 2KHSO for use
5KHSO
4K
2SO
4, it accounts for the polishing fluid mass content is 2wt%;
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to embodiment 1 said method operation.
Embodiment 13:
Abrasive is selected silicon-dioxide for use, and it accounts for the polishing fluid mass content is 5wt%;
Oxygenant is selected 4KHSO for use
53KHSO
42K
2SO
4It accounts for the polishing fluid mass content is 1wt%;
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to embodiment 1 said method operation.
Embodiment 14:
Abrasive is selected silicon-dioxide for use; It accounts for the polishing fluid mass content is 5wt%
Oxygenant is selected 5KHSO for use
54KHSO
44K
2SO
4It accounts for the polishing fluid mass content is 0.1wt%
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to embodiment 1 said method operation.
Embodiment 15:
Abrasive is selected silicon-dioxide for use; It accounts for the polishing fluid mass content is 20wt%
Oxygenant is selected 3KHSO for use
52KHSO
42K
2SO
4It accounts for the polishing fluid mass content is 1wt%
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 4
Finishing method is with reference to embodiment 1 said method operation.
Embodiment 16:
Abrasive is selected silicon-dioxide for use; It accounts for the polishing fluid mass content is 0.1wt%
Oxygenant is selected 6KHSO for use
53KHSO
44K
2SO
4It accounts for the polishing fluid mass content is 2wt%
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to embodiment 1 said method operation.
Embodiment 17:
Abrasive is selected aluminum oxide for use; It accounts for the polishing fluid mass content is 5wt%
Oxygenant is selected 4KHSO for use
52KHSO
43K
2SO
4It accounts for the polishing fluid mass content is 2wt%
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to embodiment 1 said method operation.
Embodiment 18:
Abrasive is selected red stone for use; It accounts for the polishing fluid mass content is 5wt%
Oxygenant is selected 4KHSO for use
53KHSO
42K
2SO
4It accounts for the polishing fluid mass content is 2wt%
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to embodiment 1 said method operation.
Embodiment 19:
Abrasive is selected silicon-dioxide for use; It accounts for the polishing fluid mass content is 7wt%
Oxygenant is selected 5KHSO for use
53KHSO
44K
2SO
4It accounts for the polishing fluid mass content is 2wt%
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to embodiment 1 said method operation.
Embodiment 20:
Abrasive is selected titanium oxide for use; It accounts for the polishing fluid mass content is 10wt%
Oxygenant: 3KHSO
52KHSO
42K
2SO
4It accounts for the polishing fluid mass content is 2wt%
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to embodiment 1 said method operation.
Comparative Examples 1:
Abrasive is selected silicon-dioxide for use; It accounts for the polishing fluid mass content is 5wt%
Oxygenant is selected hydrogen peroxide for use, and it accounts for the polishing fluid mass content is 1wt%
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5
Except that the oxygenant difference, all the other components are identical with embodiment 1 with proportioning, and finishing method is with reference to embodiment 1 said method operation.
Comparative Examples 2:
Abrasive is selected silicon-dioxide for use; It accounts for the polishing fluid mass content is 5wt%
Oxygenant is selected hydrogen peroxide for use; It accounts for the polishing fluid mass content is 2wt%
Add present technique field usual component such as tensio-active agent, complexing agent as required;
Polishing fluid pH value is adjusted to 1.5
Except that the oxygenant difference, all the other components are identical with embodiment 2 with proportioning, and finishing method is with reference to embodiment 1 said method operation.
Embodiment, Comparative Examples implementation result:
Table 1 embodiment and Comparative Examples polishing effect
| GST polishing velocity (A/min) | |
| Comparative Examples 1 | 1040 |
| Comparative Examples 2 | 1800 |
| Embodiment 1 | 5800 |
| Embodiment 2 | 9400 |
| Embodiment 3 | 4000 |
| Embodiment 4 | 13000 |
| Embodiment 5 | 15300 |
Can find out by last table 1:
The embodiment of the invention 1 is compared with Comparative Examples 1, is at 1% o'clock at oxidant concentration, and it is oxygenant that the present invention adopts the hydrogen persulfate salt compsn, and the GST polishing velocity approximately is that Comparative Examples employing ydrogen peroxide 50 is 5 times of oxygenant polishing speed.
Embodiment 2 compares with Comparative Examples 2: at oxidant concentration all is 2% o'clock, and it is oxygenant that the present invention adopts the hydrogen persulfate salt compsn, and the GST polishing velocity approximately also is that Comparative Examples employing ydrogen peroxide 50 is 5 times of oxygenant polishing speed.
Other embodiment compares with Comparative Examples also has very large polishing effect difference, and therefrom we can sum up, and when adopting monopersulfate salt to be oxygenant, the GST polishing velocity is far longer than and adopts the GST polishing velocity of ydrogen peroxide 50 as oxygenant.
To sum up; Though monopersulfate salt is known oxygenant, in other materials process of polishing, compares with superoxide and to see that not the very significantly difference of polishing speed is arranged; And the present invention is an oxygenant polishing phase change material with persulfide; Unexpected discovery, than superoxide, GST cmp method of the present invention has obtained the polishing speed that significantly improves.
Should be understood that NM working method, reagent and instrument in the above embodiment of the present invention are to be understood that to be technical field conventional means enforcement under employing the present invention.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
| Embodiment 6 | 12000 |
| Embodiment 7 | 7500 |
| Embodiment 8 | 9540 |
| Embodiment 9 | 10800 |
| Embodiment 10 | 8650 |
| Embodiment 11 | 10600 |
| Embodiment 12 | 13400 |
| Embodiment 13 | 11700 |
| Embodiment 14 | 9730 |
| Embodiment 15 | 6580 |
| Embodiment 16 | 7630 |
| Embodiment 17 | 10500 |
| Embodiment 18 | 8700 |
| Embodiment 19 | 9070 |
| Embodiment 20 | 9560 |
Claims (15)
1. cmp method that is used for phase change material is characterized in that:
A kind of chemical mechanical polishing liquid that contains abrasive material, oxygenant is provided; Wherein, said oxygenant comprises the composite salt of monopersulfate salt;
Adopt above-mentioned chemical mechanical polishing liquid on grinding stage, the base material that contains phase change material to be carried out chemically machinery polished.
2. finishing method as claimed in claim 1 is characterized in that: the composite salt of said monopersulfate salt comprises the compsn that monopersulfate salt, hydrosulfate and vitriol are formed.
3. finishing method as claimed in claim 2 is characterized in that: said salt is sylvite, sodium salt or ammonium salt.
4. finishing method as claimed in claim 2 is characterized in that: the mol ratio of described monopersulfate salt, hydrosulfate and vitriol is 2～5: 1～3: 1～4.
5. finishing method as claimed in claim 4 is characterized in that: the mol ratio 2～3: 1～2: 1～2 of described monopersulfate salt, hydrosulfate and vitriol.
6. finishing method as claimed in claim 5 is characterized in that: the mol ratio of described monopersulfate salt, hydrosulfate and vitriol 2: 1: 1.
7. finishing method as claimed in claim 2 is characterized in that: said composite salt comprises the compsn that Potassium Monopersulfate, sal enixum and vitriolate of tartar are formed.
8. finishing method as claimed in claim 2 is characterized in that: the mass percent that the compsn that said monopersulfate salt, hydrosulfate and vitriol are formed accounts for said chemical mechanical polishing liquid is 0.1～10wt%.
9. finishing method as claimed in claim 8 is characterized in that: the mass percent that the compsn that said monopersulfate salt, hydrosulfate and vitriol are formed accounts for said chemical mechanical polishing liquid is 1～5wt%.
10. finishing method as claimed in claim 2 is characterized in that: said abrasive material is one or more in silicon-dioxide, aluminum oxide, cerium oxide, red stone, silicon nitride and the titanium oxide.
11. finishing method as claimed in claim 2 is characterized in that: the mass percent that described abrasive material accounts for said chemical mechanical polishing liquid is 0.1～20wt%.
12. finishing method as claimed in claim 2 is characterized in that: described chemical mechanical polishing liquid adopts pH value regulator that the pH value of chemical mechanical polishing liquid is adjusted to 0.5～4.
13. like the described finishing method of above-mentioned each claim, it is characterized in that: in the said polishing process, grinding pressure is 3～5psi.
14. finishing method as claimed in claim 13 is characterized in that: in the said polishing process, the grinding stage rotating speed is 60～120 rev/mins, and grinding head rotation rotating speed is 80～200 rev/mins.
15. finishing method as claimed in claim 14 is characterized in that: in the said polishing process, the rate of addition of said chemical mechanical polishing liquid is 80～200ml/ minute.
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| CN103897603A (en) * | 2012-12-28 | 2014-07-02 | 上海新安纳电子科技有限公司 | GST neutral chemical mechanical polishing solution |
| CN111662641A (en) * | 2020-06-30 | 2020-09-15 | 中国科学院上海微***与信息技术研究所 | High-selectivity chemical mechanical polishing solution and application thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103897603A (en) * | 2012-12-28 | 2014-07-02 | 上海新安纳电子科技有限公司 | GST neutral chemical mechanical polishing solution |
| CN103897603B (en) * | 2012-12-28 | 2016-09-28 | 上海新安纳电子科技有限公司 | A kind of GST neutral chemical machine polishing liquor |
| CN111662641A (en) * | 2020-06-30 | 2020-09-15 | 中国科学院上海微***与信息技术研究所 | High-selectivity chemical mechanical polishing solution and application thereof |
| CN111662641B (en) * | 2020-06-30 | 2021-10-26 | 中国科学院上海微***与信息技术研究所 | High-selectivity chemical mechanical polishing solution and application thereof |
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