CN102810571B - Substrate, display device and substrate preparation method - Google Patents

Substrate, display device and substrate preparation method Download PDF

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Publication number
CN102810571B
CN102810571B CN201210287742.8A CN201210287742A CN102810571B CN 102810571 B CN102810571 B CN 102810571B CN 201210287742 A CN201210287742 A CN 201210287742A CN 102810571 B CN102810571 B CN 102810571B
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layer
via hole
conductive filler
filler layer
thickness
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CN102810571A (en
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舒适
惠官宝
薛建设
徐传祥
刘陆
齐永莲
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BOE Technology Group Co Ltd
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Abstract

The invention discloses a COA (color filter on array) substrate which comprises a TFT (thin film transistor), a color layer and a pixel electrode. A via penetrating through the color layer is arranged above a drain of the TFT, a conductive packing layer is arranged in the via, and the pixel electrode is connected with the drain of the TFT through the conductive packing layer. By the aid of the conductive packing layer formed in the via of the COA substrate, the problem of line breakage of the conductive layer caused by excessive depth of the via or unsmooth inner surface of the via is effectively solved, and yield is increased. The invention further provides a display device and a COA substrate preparation method.

Description

The preparation method of a kind of substrate, display unit and this substrate
Technical field
The present invention relates to technical field of liquid crystal display, particularly the preparation method of a kind of substrate, display unit and this substrate.
Background technology
COA(Color Filter on Array) technology is the technology be prepared in by color layer on array base palte; the basic structure of COA substrate as shown in Figure 1; underlay substrate 1 is formed thin-film transistor TFT, color layer 4 and pixel electrode 5 successively; between the drain electrode 2 of TFT and color layer 4, there is protective layer 3; and being provided with the via hole running through color layer 4 above drain electrode 2, between pixel electrode 5 with drain electrode 2, via hole is connected.Because there is not the alignment issues of color membrane substrates and array base palte in the display floater of COA structure, so the difficulty to box processing procedure in display floater preparation process can be reduced, avoid error during box, therefore black matrix" can be designed as narrow linewidth, improves aperture opening ratio.
When the implementation employing of COA technology forms the production order of drain electrode 2-protective layer 3-color layer 4-pixel electrode 5 on substrate 1 successively, need above drain electrode 2, form the via hole running through color layer 4 and protective layer 5, as structure shown in dotted line in Fig. 1; Concrete formation method is as shown in Figure 2: as shown in a ~ c in Fig. 2, first the first perforate A is left when preparing color layer 4, utilize color layer 4 as mask, dry quarter is carried out to the protective layer 3 that the first perforate A position is exposed, form via hole, make like this and can reduce by a patterning processes (generally comprising the techniques such as gluing-exposure-development-etching-stripping); But; protective layer 3 can produce quarter in dry carving technology; namely protective layer 3 is after the part of the first perforate A lower limb exposed portion to color layer 4 etches; also can lateral etching a part; the marginal dimension of the second perforate B causing protective layer 3 to generate is greater than the size of the first perforate A lower limb of color layer 4, as shown in d in Fig. 2, therefore causes by the surface irregularity of the whole via hole formed; broken string can be caused bad when forming pixel electrode 5, as shown in e in Fig. 2.Meanwhile, because this via hole runs through the thickness sum of color layer 4 and protective layer 3(color layer 4 and protective layer 3 about several microns), causing the degree of depth of via hole comparatively dark, also easily producing broken string when forming pixel electrode 5 bad.
Summary of the invention
The invention provides a kind of substrate, be provided with the conductive filler layer for filled vias in this substrate through holes, the broken string that can improve due to the conductive layer that the degree of depth is crossed deeply or the out-of-flatness of mistake internal surface of hole causes of via hole is bad; In addition, present invention also offers the preparation method of a kind of display unit and a kind of aforesaid substrate.
For achieving the above object, the invention provides following technical scheme:
A kind of COA substrate, comprise thin-film transistor TFT, color layer and pixel electrode, be provided with the via hole running through described color layer above the drain electrode of described TFT, be provided with conductive filler layer in described via hole, described pixel electrode is connected by the drain electrode of described conductive filler layer with described TFT.
Preferably, this substrate also comprises the protective layer be arranged between TFT and color layer, and described via hole extends and runs through described protective layer.
Preferably, the thickness of described conductive filler layer is more than or equal to the thickness of described protective layer and is less than or equal to the degree of depth of described via hole.
Preferably, the thickness of described conductive filler layer is 0.8 μm ~ 2.8 μm.
Preferably, the thickness of described conductive filler layer is 1.0 μm ~ 2.4 μm.
Preferably, described conductive filler layer is photoetching elargol.
The present invention also provides a kind of display unit, comprises above-mentioned substrate.
The present invention also provides a kind of preparation method of above-mentioned COA substrate, comprises the following steps:
Underlay substrate is formed thin-film transistor TFT and color layer, and is forming at least one via hole exposing the drain electrode of TFT;
Conductive filling material is injected in each via hole;
Process is cured to described conductive filling material, forms conductive filler layer.
Sputter pixel electrode layer on conductive layer in color layer and each via hole, and form the pixel electrode of respective graphical, realize being electrically connected by conductive filler layer between pixel electrode with source electrode.
Preferably, step injects conductive filling material in each via hole, and described conductive filling material is injected described via hole by the concrete mode of ink jet printing that adopts.
Preferably, described conductive filling material is photoetching elargol.
Preferably, step is cured process to described conductive filling material, is formed in conductive filler layer and specifically comprises:
To described conductive filling material baking 2 ~ 15min at 50 DEG C ~ 120 DEG C, carry out maskless lithography to full wafer COA substrate, exposure intensity is 150mJ/cm 3~ 330mJ/cm 3; Development is carried out to described conductive filling material and removes redundance, obtain certain thickness conductive filling material; At 100 DEG C ~ 250 DEG C, toast 20 ~ 40min, obtain conductive filler layer.
The present invention, by forming conductive filler layer in the via hole of COA substrate, efficiently solves the conductive layer disconnection problem because hole depth is crossed deeply or the out-of-flatness of mistake internal surface of hole causes excessively, improves yield.
Accompanying drawing explanation
Fig. 1 is COA substrate basic structure schematic diagram in prior art;
Fig. 2 is the principle schematic that in prior art, COA substrate forms via hole and pixel electrode;
Fig. 3 is the structural representation of COA substrate provided by the invention;
Fig. 4 is the schematic diagram after COA substrate through holes region provided by the invention is amplified;
Fig. 5 is the principle schematic of COA substrate provided by the invention;
Fig. 6 is the flow chart of COA base plate preparation method provided by the invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
COA substrate provided by the invention, as shown in Figure 3, comprise thin-film transistor TFT, color layer 04 and pixel electrode 05, the via hole running through color layer 04 is provided with above the drain electrode 02 of TFT, be provided with conductive filler layer 06 in described via hole, pixel electrode 04 is connected with the drain electrode 02 of TFT by conductive filler layer 06.
The enlarged diagram of via area as shown in Figure 4, comprises drain electrode 02, color layer 04, pixel electrode 05, conductive filler layer 06, and pixel electrode 05 is connected with drain electrode 02 by conductive filler layer 06.
First, in above-mentioned COA substrate, via hole can be filled certain thickness by conductive filler layer 06, thus plays the effect of smooth via hole, and meanwhile, conductive filler layer 06 is electrically connected with drain electrode 02; During sputtering pixel electrode 05, pixel electrode 05 is electrically connected with drain electrode 02 by conductive filler layer 06, thus improves the problem of the pixel electrode broken string caused owing to crossing internal surface of hole out-of-flatness.
Certainly, the COA substrate that the present embodiment provides can not comprise protective layer, directly on TFT, prepares color layer, because the color layer adopted at present is the resin material of insulating properties, therefore also can play the effect of protective layer.But preferably, the COA substrate that the present embodiment provides also comprises the protective layer 03 between TFT and color layer 04, and described via hole extends and runs through protective layer 03.Following examples are all described to arrange protective layer 03.
Under the condition that there is protective layer 03, preferably, conductive filler layer 06 thickness preferably greater than or equal to protective layer 03 thickness and be less than or equal to the degree of depth of via hole.The thickness of conductive filler layer 06 is arranged within above-mentioned thickness range, can ensure in the problem solving pixel electrode 05 broken string caused owing to crossing internal surface of hole out-of-flatness, new problem (as section difference problem) can not be occurred again simultaneously because conductive filler layer 06 is blocked up.
On COA substrate, the degree of depth of via hole is generally at 3 μm ~ 4 μm; the thickness of protective layer is generally at about 0.5 μm; the thickness of conductive filler layer 06 preferably 0.8 μm ~ 2.8 μm in the COA substrate that embodiments of the invention provide; concrete, the thickness of conductive filler layer 06 can be: 0.8 μm, 1.0 μm, 1.1 μm, 1.3 μm, 1.5 μm, 1.6 μm, 1.8 μm, 2.0 μm, 2.1 μm, 2.4 μm, 2.6 μm, 2.8 μm etc.The thickness of conductive filler layer 06 can also be other values, and concrete one-tenth-value thickness 1/10 can be determined according to the one-tenth-value thickness 1/10 of protective layer in actual production 03 and color layer 04 and product demand, illustrates no longer one by one here.
More preferably; the Thickness scope of conductive filler layer 06 is 1.0 μm ~ 2.4 μm; concrete; the thickness of conductive filler layer 06 can be: 1.0 μm, 1.1 μm, 1.3 μm, 1.5 μm, 1.6 μm, 1.8 μm, 2.0 μm, 2.1 μm, 2.3 μm, 2.4 μm etc.; the thickness of conductive filler layer 06 can also be other values; concrete one-tenth-value thickness 1/10 also can be determined according to the one-tenth-value thickness 1/10 of protective layer in actual production and color layer and product demand, illustrates no longer one by one here.
The material of conductive filler layer 06 can adopt conductive resin material or the preparation of other electric conducting materials, preferred employing photoetching elargol preparation, photoetching elargol is the material that field of liquid crystals is relatively commonly used, have that conductance is high simultaneously, ungauged regions before and after solidification, there is good dispersiveness and with metal, there is the characteristics such as good cohesiveness, the two conductive layers that connected by via hole can be made to obtain electrical connection preferably.
Certainly, the underlay substrate 01 mentioned in the present embodiment can be glass substrate, also can be the transparent substrates substrate of other material, illustrate no longer one by one here.
Present invention also offers a kind of display unit, comprise the substrate mentioned in technique scheme.
As shown in Figure 5 and Figure 6, present invention also offers a kind of preparation method of COA substrate, COA substrate is a kind of substrate preparing chromatic colour layer on array base palte, and concrete preparation process is as follows:
Step S1, underlay substrate 01 is formed thin-film transistor TFT and color layer 4, and is forming at least one via hole exposing the drain electrode 02 of TFT;
Step S1 can be: on substrate, apply color light resistance layer, patterning processes is adopted to form color layer 04, and via hole A is formed on the position that color layer 04 is corresponding with the drain electrode 02 of TFT, as shown in a ~ c in Fig. 5, this patterning processes comprises color light resistance layer coating-exposure-development process, do not comprise etching technics, preparation due to current color layer generally adopts the colored photoresist of negativity, and the not reserve area of photoresist just can be removed by developing process, figure required for formation, does not therefore need to carry out etching technics again.
Certainly, when there is protective layer 03, adopt dry carving technology to etch to the protective layer 03 exposed, thus make via hole A extend through protective layer 03, expose the drain electrode 02 of TFT, as shown in d in Fig. 5.
Step S2, injects conductive filling material in each via hole; Concrete, in each via hole, inject conductive filling material, and spin coating or blade coating are evenly, as shown in e in Fig. 5.
Wherein, the injection of conductive filling material preferably adopts the mode of inkjet printing to realize, and after conductive filling material is injected via hole, adopts spin coating or doctor blade process to make conductive filling material surface uniform smooth.
And conductive filling material can select conductive resin material or the preparation of other electric conducting materials, preferred employing photoetching elargol preparation, photoetching elargol is the material that field of liquid crystals is relatively commonly used, have that conductance is high simultaneously, ungauged regions before and after solidification, there is good dispersiveness and with metal, there is good cohesiveness, the two conductive layers that connected by via hole can be made to obtain electrical connection preferably.
Step S3, is cured process to described conductive filling material, forms conductive filler layer.As shown in f in Fig. 5.
The baking of certain strength, exposure and solidification are carried out to the conductive filling material in each via hole, is met the conductive filler layer 06 of thickness requirement, stability and the conductivity of conductive filler layer 06 can be increased like this.
In step S3, adopt photoetching elargol as follows as the concrete solidification processing procedure of conductive filler layer 06:
First, first toast the photoetching elargol of coating, the temperature of baking can at 50 ~ 120 DEG C, and baking time can be 2 ~ 15min;
Carry out to the photoetching elargol of coating the exposure controlling exposure, its exposure intensity controls at 150mJ/cm 3~ 330mJ/cm 3, to remove unnecessary photoetching elargol, be met the photoetching elargol of thickness requirement;
Be cured the photoetching elargol meeting thickness requirement, curing temperature can at 100 ~ 250 DEG C, and curing time can be 20 ~ 40min.
More specifically, the concrete treatment conditions of photoetching elargol can adopt following condition:
Can to the COA substrate baking 6min being coated with photoetching elargol in step S1 at 70 DEG C of temperature, carry out maskless lithography to full wafer COA substrate, exposure intensity is 180mJ/cm 3; Photoetching elargol is developed; Baking-curing 30min at 190 DEG C of temperature;
Can also to the COA substrate baking 15min being coated with photoetching elargol in step S1 at 50 DEG C of temperature, carry out maskless lithography to full wafer COA substrate, exposure intensity is 150mJ/cm 3; Photoetching elargol is developed; Baking-curing 20min at 100 DEG C of temperature;
Can also to the COA substrate baking 2min being coated with photoetching elargol in step S1 at 120 DEG C of temperature, carry out maskless lithography to full wafer COA substrate, exposure intensity is 330mJ/cm 3; Photoetching elargol is developed; Baking-curing 40min at 250 DEG C of temperature.
Certainly; illustrate only three kinds of concrete processing modes above; wherein; temperature and time, exposure intensity and curing temperature and the time of baking can also have other to select; as long as the change done on the basis of above-mentioned theory; to realize the method processed photoetching elargol, all within scope.
The thickness of conductive filler layer 06 preferably greater than or equal to protective layer 03 thickness and be less than or equal to the degree of depth of via hole; so both be filled with due to cross carve cause cross internal surface of hole irregular problem, also can not exceed the upper surface of color layer 04 and the section of appearance difference problem due to the thickness of the conductive filler layer 03 formed simultaneously.
After conductive filling material injects via hole; its thickness can be greater than the degree of depth of via hole; in order to the not section of generation difference problem; therefore the thickness reducing conductive filling material is needed; remove redundance; make it meet and be more than or equal to protective layer 03 thickness and the degree of depth being less than or equal to via hole, therefore after ink jet printing completes, increase the technique of exposure imaging.Because conductive filler layer 06 adopts photoetching elargol, therefore can carry out exposure technology under without the condition of mask plate, save the expense making mask plate.
After treatment, the thickness of conductive filler layer 06 preferably 0.8 μm ~ 2.8 μm, concrete, the thickness of conductive filler layer 06 can be: 0.8 μm, 1.0 μm, 1.1 μm, 1.3 μm, 1.5 μm, 1.6 μm, 1.8 μm, 2.0 μm, 2.1 μm, 2.4 μm, 2.6 μm, 2.8 μm etc.The thickness of conductive filler layer 06 can also be other values, and concrete one-tenth-value thickness 1/10 can be determined according to the one-tenth-value thickness 1/10 of protective layer in actual production and color layer and product demand, illustrates no longer one by one here.
More preferably; the Thickness scope of conductive filler layer 06 is 1.0 μm ~ 2.4 μm; concrete; the thickness of conductive filler layer 06 can be: 1.0 μm, 1.1 μm, 1.3 μm, 1.5 μm, 1.6 μm, 1.8 μm, 2.0 μm, 2.1 μm, 2.3 μm, 2.4 μm etc.; certainly; in step 202; the thickness of the conductive filler layer 06 obtained can also be other values; concrete one-tenth-value thickness 1/10 also can be determined according to the one-tenth-value thickness 1/10 of protective layer in actual production and color layer and product demand, illustrates no longer one by one here.
Step S4, sputters pixel electrode layer on the conductive layer in color layer 04 and each via hole, and forms the pixel electrode 05 of respective graphical, realizes being electrically connected, as shown in g in Fig. 5 between pixel electrode 05 with source electrode 02 by conductive filler layer 06.
The method forming pixel electrode 05 can adopt chemical vapour deposition technique etc. to form pixel electrode layer, and forms pixel electrode by patterning processes such as photoresist coating, exposure, development, etchings.
The substrate of other types form the method for conductive filler layer 06 in the vias and said method similar, do not repeat them here.
The present invention, by forming conductive filler layer in the via hole of COA substrate, efficiently solves the conductive layer disconnection problem because hole depth is crossed deeply or the out-of-flatness of mistake internal surface of hole causes excessively, improves yield.Obviously, those skilled in the art can carry out various change and modification to the embodiment of the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.

Claims (9)

1. a COA substrate, it is characterized in that, comprise thin-film transistor TFT, color layer and pixel electrode, the via hole running through described color layer is provided with above the drain electrode of described thin-film transistor TFT, be provided with conductive filler layer in described via hole, described pixel electrode is connected by the drain electrode of described conductive filler layer with described thin-film transistor TFT; Also comprise the protective layer be arranged between thin-film transistor TFT and color layer, described via hole extends and runs through protective layer, and the thickness of described conductive filler layer is more than or equal to the thickness of described protective layer and is less than the degree of depth of described via hole.
2. COA substrate according to claim 1, is characterized in that, the thickness of described conductive filler layer is 0.8 μm ~ 2.8 μm.
3. COA substrate according to claim 1, is characterized in that, the thickness of described conductive filler layer is 1.0 μm ~ 2.4 μm.
4. COA substrate according to claim 1, is characterized in that, described conductive filler layer is photoetching elargol.
5. a display unit, is characterized in that, comprises the arbitrary described COA substrate of Claims 1 to 4.
6. a preparation method for COA substrate, is characterized in that, comprises the following steps:
Underlay substrate is formed thin-film transistor TFT and color layer, and forms at least one via hole exposing the drain electrode of thin-film transistor TFT, also form the protective layer be arranged between thin-film transistor TFT and color layer, described via hole extends and runs through protective layer;
Conductive filling material is injected in each via hole;
Be cured process to described conductive filling material, form conductive filler layer, wherein, the thickness of conductive filler layer is more than or equal to the thickness of described protective layer and is less than the degree of depth of described via hole;
Sputter pixel electrode layer on conductive filler layer in color layer and each via hole, and form the pixel electrode of respective graphical, realize being electrically connected by conductive filler layer between pixel electrode with drain electrode.
7. the preparation method of COA substrate according to claim 6, is characterized in that, step injects conductive filling material in each via hole, and described conductive filling material is injected described via hole by the concrete mode of ink jet printing that adopts.
8. the preparation method of COA substrate according to claim 6, is characterized in that, described conductive filling material is photoetching elargol.
9. the preparation method of COA substrate according to claim 8, is characterized in that, step is cured process to described conductive filling material, is formed in conductive filler layer and specifically comprises:
To described conductive filling material baking 2 ~ 15min at 50 DEG C ~ 120 DEG C, carry out maskless lithography to full wafer COA substrate, exposure intensity is 150mJ/cm 3~ 330mJ/cm 3; Development is carried out to described conductive filling material and removes redundance, obtain certain thickness conductive filling material; At 100 DEG C ~ 250 DEG C, toast 20 ~ 40min, obtain conductive filler layer.
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CN103325732B (en) * 2013-06-28 2016-03-30 京东方科技集团股份有限公司 A kind of COA substrate and manufacture method, display unit
CN103984147A (en) * 2014-05-04 2014-08-13 深圳市华星光电技术有限公司 Array panel and manufacturing method thereof
CN105607365A (en) * 2015-12-31 2016-05-25 深圳市华星光电技术有限公司 COA substrate and fabrication method therefor
CN106200153B (en) * 2016-08-30 2019-06-14 京东方科技集团股份有限公司 A kind of liquid crystal display device
CN106773369B (en) * 2016-12-26 2019-12-31 深圳市华星光电技术有限公司 Color film substrate and liquid crystal display panel
CN106711156B (en) * 2017-01-22 2020-06-12 京东方科技集团股份有限公司 Array substrate, display panel and array substrate preparation method
CN109920798B (en) * 2019-02-01 2021-04-09 云谷(固安)科技有限公司 Array substrate, manufacturing method thereof and display panel
CN115220266A (en) * 2022-07-07 2022-10-21 广州华星光电半导体显示技术有限公司 Array substrate and manufacturing method thereof

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